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Fu J, Li C, Wu Q, Hu J, Lu Y, Quan W, Peng Y, Wang X, Yang P, Huan Y, Ji Q, Zhang Y. Large-Substrate-Terrace Confined Growth of Arrayed Ultrathin PtSe 2 Ribbons on Step-Bunched Vicinal Au(001) Facets Toward Electrocatalytic Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2401770. [PMID: 38764303 DOI: 10.1002/smll.202401770] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/05/2024] [Revised: 04/29/2024] [Indexed: 05/21/2024]
Abstract
Ultrathin PtSe2 ribbons can host spin-polarized edge states and distinct edge electrocatalytic activity, emerging as a promising candidate for versatile applications in various fields. However, the direct synthesis is still challenging and the growth mechanism is still unclear. Herein, the arrayed growth of ultrathin PtSe2 ribbons on bunched vicinal Au(001) facets, via a facile chemical vapor deposition (CVD) route is reported. The ultrathin PtSe2 flakes can transform from traditional irregular shapes to desired ribbon shapes by increasing the height of bunched and unidirectionally oriented Au steps (with step height hstep) is found. This crossover, occurring at hstep ≈ 3.0 nm, defines the tailored growth from step-flow to single-terrace-confined modes, as validated by density functional theory calculations of the different system energies. On the millimeter-scale single-crystal Au(001) films with aligned steps, the arrayed ultrathin PtSe2 ribbons with tunable width of ≈20-1000 nm, which are then served as prototype electrocatalysts for hydrogen evolution reaction (HER) is achieved. This work should represent a huge leap in the direct synthesis and the mechanism exploration of arrayed ultrathin transition-metal dichalcogenides (TMDCs) ribbons, which should stimulate further explorations of the edge-related physical properties and practical applications.
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Affiliation(s)
- Jiatian Fu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Chenyu Li
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, P. R. China
| | - Qilong Wu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Jingyi Hu
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Yue Lu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, P. R. China
| | - Wenzhi Quan
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - You Peng
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Xiangzhuo Wang
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Pengfei Yang
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Yahuan Huan
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Qingqing Ji
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, P. R. China
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
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Minj A, Mootheri V, Banerjee S, Nalin Mehta A, Serron J, Hantschel T, Asselberghs I, Goux L, Kar GS, Heyns M, Lin DHC. Direct Assessment of Defective Regions in Monolayer MoS 2 Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements. ACS NANO 2024; 18:10653-10666. [PMID: 38556983 DOI: 10.1021/acsnano.4c03080] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
Implementing two-dimensional materials in field-effect transistors (FETs) offers the opportunity to continue the scaling trend in the complementary metal-oxide-semiconductor technology roadmap. Presently, the search for electrically active defects, in terms of both their density of energy states and their spatial distribution, has turned out to be of paramount importance in synthetic transition metal dichalcogenides layers, as they are suspected of severely inhibiting these devices from achieving their highest performance. Although advanced microscopy tools have allowed the direct detection of physical defects such as grain boundaries and point defects, their implementation at the device scale to assess the active defect distribution and their impact on field-induced channel charge modulation and current transport is strictly restrained. Therefore, it becomes critical to directly probe the gate modulation effect on the carrier population at the nanoscale of an FET channel, with the objective to establish a direct correlation with the device characteristics. Here, we have investigated the active channel in a monolayer MoS2 FET through in situ scanning probe microscopy, namely, Kelvin probe force microscopy and scanning capacitance microscopy, to directly identify active defect sites and to improve our understanding of the contribution of grain boundaries, bilayer islands, and defective grain domains to channel conductance.
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Affiliation(s)
| | - Vivek Mootheri
- IMEC, Kapeldreef 75, 3001 Leuven, Belgium
- Department of Materials, KU Leuven, Kapeldreef 75, 3001 Leuven, Belgium
| | | | | | | | | | | | | | | | - Marc Heyns
- IMEC, Kapeldreef 75, 3001 Leuven, Belgium
- Department of Materials, KU Leuven, Kapeldreef 75, 3001 Leuven, Belgium
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Yao Q, Jung H, Kong K, De C, Kim J, Denlinger JD, Yeom HW. Robust Luttinger Liquid State of 1D Dirac Fermions in a Van der Waals System Nb 9Si 4Te 18. NANO LETTERS 2023; 23:7961-7967. [PMID: 37624091 DOI: 10.1021/acs.nanolett.3c01789] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/26/2023]
Abstract
We report on the Tomonaga-Luttinger liquid (TLL) behavior in fully degenerate 1D Dirac Fermions. A ternary van der Waals material Nb9Si4Te18 incorporates in-plane NbTe2 chains, which produce a 1D Dirac band crossing Fermi energy. Tunneling conductance of electrons confined within NbTe2 chains is found to be substantially suppressed at Fermi energy, which follows a power law with a universal temperature scaling, hallmarking a TLL state. The obtained Luttinger parameter of ∼0.15 indicates a strong electron-electron interaction. The TLL behavior is found to be robust against atomic-scale defects, which might be related to the Dirac electron nature. These findings, combined with the tunability of the compound and the merit of a van der Waals material, offer a robust, tunable, and integrable platform to exploit non-Fermi liquid physics.
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Affiliation(s)
- Qirong Yao
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Korea
| | - Hyunjin Jung
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Korea
- Department of Physics, Pohang University of Science and Technology, Pohang 37673, Korea
| | - Kijeong Kong
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Korea
| | - Chandan De
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Korea
| | - Jaeyoung Kim
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Korea
| | - Jonathan D Denlinger
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Han Woong Yeom
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Korea
- Department of Physics, Pohang University of Science and Technology, Pohang 37673, Korea
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He J, Mao L, Ma X, Hua J, Cui Z, He B, Pei H, Li J. Highly-Efficient adsorptive separation of Cs+ from aqueous solutions by porous polyimide membrane containing Dibenzo-18-Crown-6. Sep Purif Technol 2022. [DOI: 10.1016/j.seppur.2022.121757] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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Wang K, Taniguchi T, Watanabe K, Xue J. Natural p-n Junctions at the MoS 2 Flake Edges. ACS APPLIED MATERIALS & INTERFACES 2022; 14:39039-39045. [PMID: 35984409 DOI: 10.1021/acsami.2c09457] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) semiconductors are holding promises as channel materials for field-effect transistors. Compared to traditional three-dimensional (3D) semiconductors whose electronic and optical properties are hindered by dangling bonds and trap states at the surfaces, 2D materials with saturated chemical bonds on the surface maintain the excellent properties even when device thickness scales down to monolayer. However, dangling bonds are unavoidable at their edges, which are often overlooked and should have important effects on the devices. Here, we show that the edges of as-exfoliated and etched MoS2 are naturally p-type doped and can form p-n junctions with the bulk of the flake. The width of these edge regions is around 20 nm. While their existence could present challenges for the shrinkage of devices, they can be exploited to form rectifying or optoelectronic devices based on a single flake of MoS2 without the need of an elaborate extrinsic doping process.
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Affiliation(s)
- Kang Wang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- University of Chinese Academy of Science, Beijing 100190, China
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-004, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Jiamin Xue
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
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Sui X, Wang H, Liang C, Zhang Q, Bo H, Wu K, Zhu Z, Gong Y, Yue S, Chen H, Shang Q, Mi Y, Gao P, Zhang Y, Meng S, Liu X. Ultrafast Internal Exciton Dissociation through Edge States in MoS 2 Nanosheets with Diffusion Blocking. NANO LETTERS 2022; 22:5651-5658. [PMID: 35786976 DOI: 10.1021/acs.nanolett.1c04987] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Edge states of two-dimensional transition-metal dichalcogenides (TMDCs) are crucial to quantum circuits and optoelectronics. However, their dynamics are pivotal but remain unclear due to the edge states being obscured by their bulk counterparts. Herein, we study the state-resolved transient absorption spectra of ball-milling-produced MoS2 nanosheets with 10 nm lateral size with highly exposed free edges. Electron energy loss spectroscopy and first-principles calculations confirm that the edge states are located in the range from 1.23 to 1.78 eV. Upon above bandgap excitations, excitons populate and diffuse toward the boundary, where the potential gradient blocks excitons and the edge states are formed through interband transitions within 400 fs. With below bandgap excitations, edge states are slowed down to 1.1 ps due to the weakened valence orbital coupling. These results shed light on the fundamental exciton dissociation processes on the boundary of functionalized TMDCs, enabling the ground work for applications in optoelectronics and light-harvesting.
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Affiliation(s)
- Xinyu Sui
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Huimin Wang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- The Laboratory of Soft Matter Physics, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Cheng Liang
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
| | - Qing Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Han Bo
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, P. R. China
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, P. R. China
| | - Keming Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
| | - Zhuoya Zhu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Yiyang Gong
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
| | - Shuai Yue
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Hailong Chen
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, P. R. China
| | - Qiuyu Shang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Yang Mi
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
| | - Peng Gao
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, P. R. China
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, P. R. China
| | - Yong Zhang
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
| | - Sheng Meng
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
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Sun X, Chen Y, Li Z, Han Y, Zhou Q, Wang B, Taniguchi T, Watanabe K, Zhao A, Wang J, Liu Y, Xue J. Visualizing Band Profiles of Gate-Tunable Junctions in MoS 2/WSe 2 Heterostructure Transistors. ACS NANO 2021; 15:16314-16321. [PMID: 34651496 DOI: 10.1021/acsnano.1c05491] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Heterostructure devices based on two-dimensional materials have been under intensive study due to their intriguing electrical and optical properties. One key factor in understanding these devices is their nanometer-scale band profiles, which is challenging to obtain in devices. Here, we use a technique named contact-mode scanning tunneling spectroscopy to directly visualize the band profiles of MoS2/WSe2 heterostructure devices at different gate voltages with nanometer resolution. The long-held view of a conventional p-n junction in the MoS2/WSe2 heterostructure is reexamined. Due to strong inter- and intralayer charge transfer, the MoS2 layer in contact with WSe2 is found to convert from n-type to p-type, and a series of gate-tunable p-n and p-p+ junctions are developed in the devices. Highly conductive edges are also discovered which could strongly affect the device properties.
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Affiliation(s)
- Xinzuo Sun
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- University of Chinese Academy of Sciences, Beijing 100190, China
| | - Yan Chen
- Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Zhiwei Li
- School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yu Han
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Qin Zhou
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Binbin Wang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Aidi Zhao
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Jianlu Wang
- Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Jiamin Xue
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
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8
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Liang Q, Zhang Q, Zhao X, Liu M, Wee ATS. Defect Engineering of Two-Dimensional Transition-Metal Dichalcogenides: Applications, Challenges, and Opportunities. ACS NANO 2021; 15:2165-2181. [PMID: 33449623 DOI: 10.1021/acsnano.0c09666] [Citation(s) in RCA: 78] [Impact Index Per Article: 26.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Atomic defects, being the most prevalent zero-dimensional topological defects, are ubiquitous in a wide range of 2D transition-metal dichalcogenides (TMDs). They could be intrinsic, formed during the initial sample growth, or created by postprocessing. Despite the majority of TMDs being largely unaffected after losing chalcogen atoms in the outermost layer, a spectrum of properties, including optical, electrical, and chemical properties, can be significantly modulated, and potentially invoke applicable functionalities utilized in many applications. Hence, controlling chalcogen atomic defects provides an alternative avenue for engineering a wide range of physical and chemical properties of 2D TMDs. In this article, we review recent progress on the role of chalcogen atomic defects in engineering 2D TMDs, with a particular focus on device performance improvements. Various approaches for creating chalcogen atomic defects including nonstoichiometric synthesis and postgrowth treatment, together with their characterization and interpretation are systematically overviewed. The tailoring of optical, electrical, and magnetic properties, along with the device performance enhancement in electronic, optoelectronic, chemical sensing, biomedical, and catalytic activity are discussed in detail. Postformation dynamic evolution and repair of chalcogen atomic defects are also introduced. Finally, we offer our perspective on the challenges and opportunities in this field.
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Affiliation(s)
- Qijie Liang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Qian Zhang
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore
| | - Xiaoxu Zhao
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore
| | - Meizhuang Liu
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
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9
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Wang J, Niu J, Shao B, Yang G, Lu C, Li M, Zhou Z, Chuai X, Chen J, Lu N, Huang B, Wang Y, Li L, Liu M. A tied Fermi liquid to Luttinger liquid model for nonlinear transport in conducting polymers. Nat Commun 2021; 12:58. [PMID: 33397910 PMCID: PMC7782818 DOI: 10.1038/s41467-020-20238-5] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/23/2020] [Accepted: 11/05/2020] [Indexed: 12/03/2022] Open
Abstract
Organic conjugated polymers demonstrate great potential in transistors, solar cells and light-emitting diodes, whose performances are fundamentally governed by charge transport. However, the morphology-property relationships and the underpinning charge transport mechanisms remain unclear. Particularly, whether the nonlinear charge transport in conducting polymers is appropriately formulated within non-Fermi liquids is not clear. In this work, via varying crystalline degrees of samples, we carry out systematic investigations on the charge transport nonlinearity in conducting polymers. Possible charge carriers' dimensionality is discussed when varying the molecular chain's crystalline orders. A heterogeneous-resistive-network (HRN) model is proposed based on the tied-link between Fermi liquids (FL) and Luttinger liquids (LL), related to the high-ordered crystalline zones and weak-coupled amorphous regions, respectively. The HRN model is supported by precise electrical and microstructural characterizations, together with theoretic evaluations, which well describes the nonlinear transport behaviors and provides new insights into the microstructure-correlated charge transport in organic solids.
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Affiliation(s)
- Jiawei Wang
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Jiebin Niu
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Bin Shao
- Shenzhen JL Computational Science and Applied Research Institute, Shenzhen, 518110, China
- Beijing Computational Science Research Center, Beijing, 100193, China
| | - Guanhua Yang
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Congyan Lu
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Mengmeng Li
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Zheng Zhou
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Xichen Chuai
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Jiezhi Chen
- School of Information Science and Engineering, Shandong University, Shandong, 266237, China
| | - Nianduan Lu
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Bing Huang
- Beijing Computational Science Research Center, Beijing, 100193, China
| | - Yeliang Wang
- School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China.
| | - Ling Li
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
| | - Ming Liu
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
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