Anomalous transport due to Weyl fermions in the chiral antiferromagnets Mn3X, X = Sn, Ge

Universal scaling law for chiral antiferromagnetism

The chiral antiferromagnetic (AFM) materials, which have been widely investigated due to their rich physics, such as non-zero Berry phase and topology, provide a platform for the development of antiferromagnetic spintronics. Here, we find two distinctive anomalous Hall effect (AHE) contributions in the chiral AFM Mn3Pt, originating from a time-reversal symmetry breaking induced intrinsic mechanism and a skew scattering induced topological AHE due to an out-of-plane spin canting with respect to the Kagome plane. We propose a universal AHE scaling law to explain the AHE resistivity (ρ A H ) in this chiral magnet, with both a scalar spin chirality (SSC)-induced skew scattering topological AHE term,a s k and non-collinear spin-texture induced intrinsic anomalous Hall term,b i n . We found thata s k andb i n can be effectively modulated by the interfacial electron scattering, exhibiting a linear relation with the inverse film thickness. Moreover, the scaling law can explain the anomalous Hall effect in various chiral magnets and has far-reaching implications for chiral-based spintronics devices.

Emerging Antiferromagnets for Spintronics

Antiferromagnets constitute promising contender materials for next-generation spintronic devices with superior stability, scalability, and dynamics. Nevertheless, the perception of well-established ferromagnetic spintronics underpinned by spontaneous magnetization seemed to indicate the inadequacy of antiferromagnets for spintronics-their compensated magnetization has been perceived to result in uncontrollable antiferromagnetic order and subtle magnetoelectronic responses. However, remarkable advancements have been achieved in antiferromagnetic spintronics in recent years, with consecutive unanticipated discoveries substantiating the feasibility of antiferromagnet-centered spintronic devices. It is emphasized that, distinct from ferromagnets, the richness in complex antiferromagnetic crystal structures is the unique and essential virtue of antiferromagnets that can open up their endless possibilities of novel phenomena and functionality for spintronics. In this Perspective, the recent progress in antiferromagnetic spintronics is reviewed, with a particular focus on that based on several kinds of antiferromagnets with special antiferromagnetic crystal structures. The latest developments in efficiently manipulating antiferromagnetic order, exploring novel antiferromagnetic physical responses, and demonstrating prototype antiferromagnetic spintronic devices are discussed. An outlook on future research directions is also provided. It is hoped that this Perspective can serve as guidance for readers who are interested in this field and encourage unprecedented studies on antiferromagnetic spintronic materials, phenomena, and devices.

The discovery of three-dimensional Van Hove singularity

Arising from the extreme/saddle point in electronic bands, Van Hove singularity (VHS) manifests divergent density of states (DOS) and induces various new states of matter such as unconventional superconductivity. VHS is believed to exist in one and two dimensions, but rarely found in three dimension (3D). Here, we report the discovery of 3D VHS in a topological magnet EuCd2As2 by magneto-infrared spectroscopy. External magnetic fields effectively control the exchange interaction in EuCd2As2, and shift 3D Weyl bands continuously, leading to the modification of Fermi velocity and energy dispersion. Above the critical field, the 3D VHS forms and is evidenced by the abrupt emergence of inter-band transitions, which can be quantitatively described by the minimal model of Weyl semimetals. Three additional optical transitions are further predicted theoretically and verified in magneto-near-infrared spectra. Our results pave the way to exploring VHS in 3D systems and uncovering the coordination between electronic correlation and the topological phase.

Unusual multiple magnetic transitions and anomalous Hall effect observed in antiferromagnetic Weyl semimetal, Mn2.94Ge (Ge-rich)

We report on the magnetic and Hall effect measurements of the magnetic Weyl semimetal, Mn2.94Ge (Ge-rich) single crystal. From the magnetic properties study, we identify unusual multiple magnetic transitions below the Ne'el temperature of 353 K, such as the spin-reorientation (TSR) and ferromagnetic-like transitions. Consistent with the magnetic properties, the Hall effect study shows unusual behavior around the spin-reorientation transition. Specifically, the anomalous Hall conductivity increases with increasing temperature, reaching a maximum atTSR, which then gradually decreases with increasing temperature. This observation is quite in contrast to the Mn3+δGe (Mn-rich) system, though both compositions share the same hexagonal crystal symmetry. This study unravels the sensitivity of magnetic and topological properties on the Mn concentration.

Signatures of a surface spin-orbital chiral metal

The relation between crystal symmetries, electron correlations and electronic structure steers the formation of a large array of unconventional phases of matter, including magneto-electric loop currents and chiral magnetism1-6. The detection of such hidden orders is an important goal in condensed-matter physics. However, until now, non-standard forms of magnetism with chiral electronic ordering have been difficult to detect experimentally7. Here we develop a theory for symmetry-broken chiral ground states and propose a methodology based on circularly polarized, spin-selective, angular-resolved photoelectron spectroscopy to study them. We use the archetypal quantum material Sr2RuO4 and reveal spectroscopic signatures that, despite being subtle, can be reconciled with the formation of spin-orbital chiral currents at the surface of the material8-10. As we shed light on these chiral regimes, our findings pave the way for a deeper understanding of ordering phenomena and unconventional magnetism.

Onsager Reciprocal Relation between Anomalous Transverse Coefficients of an Anisotropic Antiferromagnet

Whenever two irreversible processes occur simultaneously, time-reversal symmetry of microscopic dynamics gives rise, on a macroscopic level, to Onsager's reciprocal relations, which impose constraints on the number of independent components of any transport coefficient tensor. Here, we show that in the antiferromagnetic YbMnBi_{2}, which displays a strong temperature-dependent anisotropy, Onsager's reciprocal relations are strictly satisfied for anomalous electric (σ_{ij}^{A}) and anomalous thermoelectric (α_{ij}^{A}) conductivity tensors. In contradiction with what was recently reported by Pan et al. [Nat. Mater. 21, 203 (2022)NMAACR1476-112210.1038/s41563-021-01149-2], we find that σ_{ij}^{A}(H)=σ_{ji}^{A}(-H) and α_{ij}^{A}(H)=α_{ji}^{A}(-H). This equality holds in the whole temperature window irrespective of the relative weights of the intrinsic or extrinsic mechanisms. The α_{ij}^{A}/σ_{ij}^{A} ratio is close to k_{B}/e at room temperature but peaks to an unprecedented magnitude of 2.9k_{B}/e at ∼150  K, which may involve nondegenerate carriers of small Fermi surface pockets.

IrGe4: A Predicted Weyl-Metal with a Chiral Crystal Structure

Polycrystalline IrGe4 was synthesized by annealing elements at 800 °C for 240 h, and the composition was confirmed by energy-dispersive X-ray spectroscopy. IrGe4 adopts a chiral crystal structure (space group P3121) instead of a polar crystal structure (P31), which was corroborated by the convergent-beam electron diffraction and Rietveld refinements using synchrotron powder X-ray diffraction data. The crystal structure features layers of IrGe8 polyhedra along the b axis, and the layers are connected by edge- and corner-sharing. Each layer consists of corner-shared [Ir3Ge20] trimers, which are formed by three IrGe8 polyhedra connected by edge-sharing. Temperature-dependent resistivity indicates metallic behavior. The magnetoresistance increases with increasing applied magnetic field, and the nonsaturating magnetoresistance reaches 11.5% at 9 T and 10 K. The Hall resistivity suggests that holes are the majority carrier type, with a carrier concentration of 4.02 × 1021 cm-3 at 300 K. Electronic band structures calculated by density functional theory reveal a Weyl point with a chiral charge of +3 above the Fermi level.

SdH Oscillations from the Dirac Surface State in the Fermi-Arc Antiferromagnet NdBi

The recent progress in CuMnAs and Mn3X (X = Sn, Ge, Pt) shows that antiferromagnets (AFMs) provide a promising platform for advanced spintronics device innovations. Most recently, a switchable Fermi-arc is discovered by the ARPES technique in antiferromagnet NdBi, but the knowledge about electron-transport property and the manipulability of the magnetic structure in NdBi is still vacant to date. In this study, SdH oscillations are successfully verified from the Dirac surface states (SSs) with 2-dimensionality and nonzero Berry phase. Particularly, it is observed that the spin-flop transition only appears when the external magnetical field is applied along [001] direction, and features obvious hysteresis for the first time in NdBi, which provides a powerful handle for adjusting the spin texture in NdBi. Crucially, the DFT shows the Dirac cone and the Fermi arc strongly depend on the high-order magnetic structure of NdBi and further reveals the orbital magnetic moment of Nd plays a crucial role in fostering the peculiar SSs, leading to unveil the mystery of the band-splitting effect and to manipulate the electronic transport, high-effectively, in the thin film works in NdBi. It is believed that this study provides important guidance for the development of new antiferromagnet-based spintronics devices based on cutting-edge rare-earth monopnictides.

Tuning of electrical, magnetic, and topological properties of magnetic Weyl semimetal Mn3+xGe by Fe doping

We report on the tuning of electrical, magnetic, and topological properties of the magnetic Weyl semimetal (Mn3+xGe) by Fe doping at the Mn site, Mn(3+x)-δFeδGe (δ= 0, 0.30, and 0.62). Fe doping significantly changes the electrical and magnetic properties of Mn3+xGe. The resistivity of the parent compound displays metallic behavior, the system withδ= 0.30 of Fe doping exhibits semiconducting or bad-metallic behavior, and the system withδ= 0.62 of Fe doping demonstrates a metal-insulator transition at around 100 K. Further, we observe that the Fe doping increases in-plane ferromagnetism, magnetocrystalline anisotropy, and induces a spin-glass state at low temperatures. Surprisingly, topological Hall state has been noticed at a Fe doping ofδ= 0.30 that is not found in the parent compound or withδ= 0.62 of Fe doping. In addition, spontaneous anomalous Hall effect observed in the parent system is significantly reduced with increasing Fe doping concentration.

Roll-to-Roll Printing of Anomalous Nernst Thermopile for Direct Sensing of Perpendicular Heat Flux

The anomalous Nernst effect (ANE) converts heat flux perpendicular to the plane into electricity, in sharp contrast with the Seebeck effect (SE), enabling mass production, large area, and flexibility of their devices through ordinary thin-film fabrication techniques. Heat flux sensors, one of the most promising applications of ANE, are powerful devices for evaluating heat flow and can lead to energy savings through efficient thermal management. In reality, however, SE caused by the in-plane heat flux is always superimposed on the measurement signal, making it difficult to evaluate the perpendicular heat flux. Here, ANE-type heat flux sensors that selectively detect a perpendicular heat flux are fabricated by adjusting the net Seebeck coefficient in their thermopile circuit with mass-producible roll-to-roll sputtering methods. The direct sensing of perpendicular heat flux using ANE-based flexible thermopiles, as well as their simple fabrication process, paves the way for the practical application of thin-film thermoelectric devices.

Chiral antiferromagnetic Josephson junctions as spin-triplet supercurrent spin valves and d.c. SQUIDs

Spin-triplet supercurrent spin valves are of practical importance for the realization of superconducting spintronic logic circuits. In ferromagnetic Josephson junctions, the magnetic-field-controlled non-collinearity between the spin-mixer and spin-rotator magnetizations switches the spin-polarized triplet supercurrents on and off. Here we report an antiferromagnetic equivalent of such spin-triplet supercurrent spin valves in chiral antiferromagnetic Josephson junctions as well as a direct-current superconducting quantum interference device. We employ the topological chiral antiferromagnet Mn3Ge, in which the Berry curvature of the band structure produces fictitious magnetic fields, and the non-collinear atomic-scale spin arrangement accommodates triplet Cooper pairing over long distances (>150 nm). We theoretically verify the observed supercurrent spin-valve behaviours under a small magnetic field of <2 mT for current-biased junctions and the direct-current superconducting quantum interference device functionality. Our calculations reproduce the observed hysteretic field interference of the Josephson critical current and link these to the magnetic-field-modulated antiferromagnetic texture that alters the Berry curvature. Our work employs band topology to control the pairing amplitude of spin-triplet Cooper pairs in a single chiral antiferromagnet.

Spin-flip-driven anomalous Hall effect and anisotropic magnetoresistance in a layered Ising antiferromagnet

The influence of magnetocrystalline anisotropy in antiferromagnets is evident in a spin flip or flop transition. Contrary to spin flops, a spin-flip transition has been scarcely presented due to its specific condition of relatively strong magnetocrystalline anisotropy and the role of spin-flips on anisotropic phenomena has not been investigated in detail. In this study, we present antiferromagnet-based functional properties on an itinerant Ising antiferromagnet Ca_0.9Sr_0.1Co₂As₂. In the presence of a rotating magnetic field, anomalous Hall conductivity and anisotropic magnetoresistance are demonstrated, the effects of which are maximized above the spin-flip transition. Moreover, a joint experimental and theoretical study is conducted to provide an efficient tool to identify various spin states, which can be useful in spin-processing functionalities.

Layer-Number-Independent Two-Dimensional Ferromagnetism in Cr3Te4

In a conventional magnetic material, a long-range magnetic order develops in three dimensions, and reducing a layer number weakens its magnetism. Here we demonstrate anomalous layer-number-independent ferromagnetism down to the two-dimensional (2D) limit in a metastable phase of Cr₃Te₄. We fabricated Cr₃Te₄ thin films by molecular-beam epitaxy and found that Cr₃Te₄ could host two distinct ferromagnetic phases characterized with different Curie temperatures (T_C). One is the bulk-like "high-T_C phase" showing room-temperature ferromagnetism, which is consistent with previous studies. The other is the metastable "low-T_C phase" with T_C ≈ 160 K, which exhibits a layer-number-independent T_C down to the 2D limit in marked contrast with the conventional high-T_C phase, demonstrating a purely 2D nature of its ferromagnetism. Such significant differences between two distinct phases could be attributed to a small variation in the doping level, making this material attractive for future ultracompact spintronics applications with potential gate-tunable room-temperature 2D ferromagnetism.

Layer-controlled evolution of electron state in the silicene intercalation compound SrSi2

Silicene, a Si-based analogue of graphene, holds a high promise for electronics because of its exceptional properties but a high chemical reactivity makes it a very challenging material to work with. The silicene lattice can be stabilized by active metals to form stoichiometric compounds MSi₂. Being candidate topological semimetals, these materials provide an opportunity to probe layer dependence of unconventional electronic structures. It is demonstrated here that in the silicene compound SrSi₂, the number of monolayers controls the electronic state. A series of films ranging from bulk-like multilayers down to a single monolayer have been synthesized on silicon and characterized with a combination of techniques - from electron and X-ray diffraction to high-resolution electron microscopy. Transport measurements reveal evolution of the chiral anomaly in bulk SrSi₂ to weak localization in ultrathin films down to 3 monolayers followed by 3D and 2D strong localization in 2 and 1 monolayers, respectively. The results outline the range of stability of the chiral state, important for practical applications, and shed light on the localization phenomena in the limit of a few monolayers.

Higher harmonics in planar Hall effect induced by cluster magnetic multipoles

Antiferromagnetic (AFM) materials are attracting tremendous attention due to their spintronic applications and associated novel topological phenomena. However, detecting and identifying the spin configurations in AFM materials are quite challenging due to the absence of net magnetization. Herein, we report the practicality of utilizing the planar Hall effect (PHE) to detect and distinguish “cluster magnetic multipoles” in AFM Nd₂Ir₂O₇ (NIO-227) fully strained films. By imposing compressive strain on the spin structure of NIO-227, we artificially induced cluster magnetic multipoles, namely dipoles and A₂- and T₁-octupoles. Importantly, under magnetic field rotation, each magnetic multipole exhibits distinctive harmonics of the PHE oscillation. Moreover, the planar Hall conductivity has a nonlinear magnetic field dependence, which can be attributed to the magnetic response of the cluster magnetic octupoles. Our work provides a strategy for identifying cluster magnetic multipoles in AFM systems and would promote octupole-based AFM spintronics.

The lack of net magnetization in antiferromagnets makes them technologically promising, but it also makes detecting the spin orders challenging. Here, using electrical transport measurement, Song et al show how the planar Hall effect can detect different cluster magnetic multipoles in antiferromagnetic Nd₂Ir₂O₇ film.

High-Power-Density Energy-Harvesting Devices Based on the Anomalous Nernst Effect of Co/Pt Magnetic Multilayers

The anomalous Nernst effect (ANE) is a thermomagnetic phenomenon with potential applications in thermal energy harvesting. While many recent works studied the approaches to increase the ANE coefficient of materials, relatively little effort was devoted to increasing the power supplied by the effect. Here, we demonstrate a nanofabricated device with record power density generated by the ANE. To accomplish this, we fabricate micrometer-sized devices in which the thermal gradient is 3 orders of magnitude higher than conventional macroscopic devices. In addition, we use Co/Pt multilayers, a system characterized by a high ANE thermopower (∼1 μV/K), low electrical resistivity, and perpendicular magnetic anisotropy. These innovations allow us to obtain power densities of around 13 ± 2 W/cm³. We believe that this design may find uses in harvesting wasted energy, e.g., in electronic devices.

Large anomalous Nernst effect and nodal plane in an iron-based kagome ferromagnet

Anomalous Nernst effect (ANE), converting a heat flow to transverse electric voltage, originates from the Berry phase of electronic wave function near the Fermi energy E_F. Thus, the ANE provides a sensitive probe to detect a topological state that produces large Berry curvature. In addition, a magnet that exhibits a large ANE using low-cost and safe elements will be useful to develop a novel energy harvesting technology. Here, we report our observation of a high ANE exceeding 3 microvolts per kelvin above room temperature in the kagome ferromagnet Fe₃Sn with the Curie temperature of 760 kelvin. Our theoretical analysis clarifies that a “nodal plane” produces a flat hexagonal frame with strongly enhanced Berry curvature, resulting in the large ANE. Our discovery of the large ANE in Fe₃Sn opens the path for the previously unexplored functionality of flat degenerate electronic states and for developing flexible film thermopile and heat current sensors.

Giant field-like torque by the out-of-plane magnetic spin Hall effect in a topological antiferromagnet

Spin-orbit torques (SOT) enable efficient electrical control of the magnetic state of ferromagnets, ferrimagnets and antiferromagnets. However, the conventional SOT has severe limitation that only in-plane spins accumulate near the surface, whether interpreted as a spin Hall effect (SHE) or as an Edelstein effect. Such a SOT is not suitable for controlling perpendicular magnetization, which would be more beneficial for realizing low-power-consumption memory devices. Here we report the observation of a giant magnetic-field-like SOT in a topological antiferromagnet Mn₃Sn, whose direction and size can be tuned by changing the order parameter direction of the antiferromagnet. To understand the magnetic SHE (MSHE)- and the conventional SHE-induced SOTs on an equal footing, we formulate them as interface spin-electric-field responses and analyzed using a macroscopic symmetry analysis and a complementary microscopic quantum kinetic theory. In this framework, the large out-of-plane spin accumulation due to the MSHE has an inter-band origin and is likely to be caused by the large momentum-dependent spin splitting in Mn₃Sn. Our work demonstrates the unique potential of antiferromagnetic Weyl semimetals in overcoming the limitations of conventional SOTs and in realizing low-power spintronics devices with new functionalities.

Conventional spin-orbit torque (SOT) enables electrical control of in-plane spins, not suitable for perpendicular magnetization. Here, the authors observe a large magnetic-field-like SOT due to a large out-of-plane spin accumulation in topological antiferromagnet Mn₃Sn.

Spin-Orbit Torque in Bilayers of Kagome Ferromagnet Fe3Sn2 and Pt

Spin-orbit torque phenomena enable efficient manipulation of the magnetization in ferromagnet/heavy metal bilayer systems for prospective magnetic memory and logic applications. Kagome magnets are of particular interest for spin-orbit torque due to the interplay of magnetic order and the nontrivial band topology (e.g., flat bands and Dirac and Weyl points). Here we demonstrate spin-orbit torque and quantify its efficiency in a bilayer system of topological kagome ferromagnet Fe₃Sn₂ and platinum. We use two different techniques, one based on the quasistatic magneto-optic Kerr effect (MOKE) and another based on time-resolved MOKE, to quantify spin-orbit torque. Both techniques give a consistent value of the effective spin Hall angle of the Fe₃Sn₂/Pt system. Our work may lead to further advances in spintronics based on topological kagome magnets.

Modern History of Organic Conductors: An Overview

This short review article provides the reader with a summary of the history of organic conductors. To retain a neutral and objective point of view regarding the history, background, novelty, and details of each research subject within this field, a thousand references have been cited with full titles and arranged in chronological order. Among the research conducted over ~70 years, topics from the last two decades are discussed in more detail than the rest. Unlike other papers in this issue, this review will help readers to understand the origin of each topic within the field of organic conductors and how they have evolved. Due to the advancements achieved over these 70 years, the field is nearing new horizons. As history is often a reflection of the future, this review is expected to show the future directions of this research field.