High-yield, wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuits

Recent progress in hybrid diamond photonics for quantum information processing and sensing

Point defects in diamond, particularly nitrogen-vacancy (NV) centers, have emerged as powerful tools for a broad range of quantum technologies. These defects are promising candidates for quantum information science, serving as deterministic single-photon sources and solid-state quantum memories. They have also been employed as nanoscale quantum sensors to detect various physical quantities, including magnetic fields, electric fields, and temperature, owing to their long spin coherence time at room temperature. Development of these diamond-based quantum technologies has been rapidly boosted by a recent quantum leap in nanofabrication technologies for high-quality single-crystal diamond. Incorporating these color centers into diamond nanostructures with mature integrated photonics provides a promising route to build scalable and practical systems for quantum applications. This review discusses recent progress and challenges in the hybrid integration of diamond color centers on cutting-edge photonic platforms.

Toward ultimate-efficiency frequency conversion in nonlinear optical microresonators

Integrated nonlinear photonics has emerged as a transformative platform, enabling nanoscale nonlinear optical processes with substantial implications. Achieving efficient nonlinear frequency conversion in microresonators is paramount to fully unlocking this potential, yet the absolute conversion efficiency (ACE) remains fundamentally constrained by dissipative losses and intrinsic nonlinear effects. In this work, we establish a unified framework for second harmonic generation in microresonators, identifying a decisive factor M that predicts the ACE limit under the nonlinear critical coupling (NCC) condition. Using this framework, we fabricate periodically poled lithium niobate microresonators and address the dispersive-dissipative suppression to approach the NCC condition. We achieve a record-high ACE of 61.3% with milliwatt-level pump powers toward the ultimate efficiency, with the potential for higher efficiency as the M factor increases. These results provide a versatile paradigm for high-efficiency nonlinear optical devices, offering opportunities for advancements across classical and quantum photonic applications.

A chip-integrated comb-based microwave oscillator

Low-noise microwave oscillators are cornerstones for wireless communication, radar and clocks. The employment and optimization of optical frequency combs have enabled photonic microwave synthesizers with unrivalled noise performance and bandwidth breaking the bottleneck of those electronic counterparts. Emerging interest is to use chip-based Kerr frequency combs, namely microcombs. Today microcombs built on photonic integrated circuits feature small size, weight and power consumption, and can be manufactured to oscillate at any frequency ranging from microwave to millimeter-wave band. A monolithic microcomb-based microwave oscillator requires integration of lasers, photodetectors and nonlinear microresonators on a common substrate, which however has still remained elusive. Here, we demonstrate the first, fully hybrid-integrated, microcomb-based microwave oscillator at 10.7 GHz. The chip device, powered by a customized microelectronic circuit, leverages hybrid integration of a high-power DFB laser, a silicon nitride microresonator of a quality factor exceeding 25 × 106, and a high-speed photodetector chip of 110 GHz bandwidth (3 dB) and 0.3 A/W responsivity. Each component represents the state of the art of its own class, yet also allows large-volume manufacturing with low cost using established CMOS and III-V foundries. The hybrid chip outputs an ultralow-noise laser of 6.9 Hz intrinsic linewidth, a coherent microcomb of 10.7 GHz repetition rate, and a 10.7 GHz microwave carrier of 6.3 mHz linewidth - all the three functions in one entity occupying a footprint of only 76 mm2. Furthermore, harnessing the nonlinear laser-microresonator interaction, we observe and maneuver a unique noise-quenching dynamics within discrete microcomb states, which offers immunity to laser current noise, suppression of microwave phase noise by more than 20 dB, and improvement of microwave power by up to 10 dB. The ultimate microwave phase noise reaches -75/-105/-130 dBc/Hz at 1/10/100 kHz Fourier offset frequency. Our results can reinvigorate our information society for communication, sensing, imaging, timing and precision measurement.

Implementing photonic-crystal resonator frequency combs in a photonic foundry

We explore an AIM Photonics silicon nitride platform to fabricate photonic-crystal resonators (PhCRs) for generating optical parametric oscillators (OPOs) and soliton microcombs. Our approach leverages the scalability and fine feature size of silicon nitride processing on large-scale silicon wafers to achieve low-loss, high-Q microresonators, functionalized by nanoscale photonic-crystal structures. We demonstrate an intrinsic microresonator quality factor up to 1.2 × 107 with complete foundry fabrication on 300 mm silicon, a 700 nm thick silicon nitride device layer, and inclusion of complex nanophotonics. These features enable a host of nonlinear nanophotonic sources on the platform, including OPOs, microcombs, parametric amplifiers, squeezed-light generators, and single-photon sources. By fine-tuning the photonic-crystal design parameters, we achieve broad tunability in the frequency of the OPO output, spanning a significant portion of the near-infrared. Additionally, we observe the formation of soliton frequency combs, enabled by the precise dispersion engineering of the microresonators. These results highlight the potential of widely accessible, photolithographically patterned, silicon nitride photonics to enable wide access to and complex integration of frequency comb sources, with applications in spectroscopy, metrology, and communications.

Linear optical wave energy redistribution methods for photonic signal processing

Manipulating the phase of an optical wave over time and frequency gives full control to the user to implement a wide variety of energy preserving transformations directly in the analogue optical domain. These can be achieved using widely available linear mechanisms, such as temporal phase modulation and spectral phase filtering. The techniques based on these linear optical wave energy redistribution (OWER) methods are inherently energy efficient and have significant speed and bandwidth advantages over digital signal processing. We describe several recent OWER methods for optical signal processing, including denoising passive amplification, real-time spectrogram analysis, passive logic computing, and more. These functionalities are relevant whenever the signal is found on a classical or quantum optical wave, or could be upconverted from radio frequencies or microwaves, and they are of interest for a wide range of applications in telecommunications, sensing, metrology, biomedical imaging, and astronomy. The energy preservation of these methods makes them particularly interesting for quantum optics applications. Furthermore, many of the individual components have been demonstrated on-chip, enabling miniaturization for applications where size and weight are a main constraint.

On-chip real-time detection of optical frequency variations with ultrahigh resolution using the sine-cosine encoder approach

Real-time measurement of optical frequency variations (OFVs) is crucial for various applications including laser frequency control, optical computing, and optical sensing. Traditional devices, though accurate, are often too large, slow, and costly. Here we present a photonic integrated circuit (PIC) chip, utilizing the sine-cosine encoder principle, for high-speed and high-resolution real-time OFV measurement. Fabricated on a thin film lithium niobate (TFLN) platform, this chip-sized optical frequency detector (OFD) (5.5 mm × 2.7 mm) achieves a speed of up to 2500 THz/s and a resolution as fine as 2 MHz over a range exceeding 160 nm. Our robust algorithm overcomes the device imperfections and ensures precise quantification of OFV parameters. As a practical demonstration, the PIC OFD surpasses existing fiber Bragg grating (FBG) interrogators in sensitivity and speed for strain and vibration measurements. This work opens new avenues for on-chip OFV detection and offers significant potential for diverse applications involving OFV measurement.

A mid-infrared Brillouin laser using ultra-high-Q on-chip resonators

Ultra-high-Q optical resonators have facilitated advancements in on-chip photonics by harnessing nonlinear functionalities. While these breakthroughs, primarily focused on the near-infrared region, have extended interest to longer wavelengths holding importance for molecule science, the absence of ultra-high-Q resonators in this region remains a significant challenge. Here, we have developed on-chip microresonators with a remarkable Q-factor of 38 million at 3.86 μm wavelength, surpassing previous records by over 30 times. Employing innovative fabrication techniques, including spontaneous formation of light-guiding geometries with internal multilayer structures during material deposition, major loss factors, such as airborne-chemical absorption, were investigated and addressed. This allowed us to access the fundamental loss performance demonstrated by chalcogenide glass fibers. Leveraging this resonator, we demonstrated an on-chip Brillouin lasing in the mid-infrared with a 91.9 μW threshold power and an 83.5 Hz Schawlow-Townes linewidth. Our results showcase the effective integration of cavity-enhanced optical nonlinearities into on-chip mid-infrared photonics.

An ultra-broadband photonic-chip-based parametric amplifier

Optical amplification, crucial for modern communication, primarily relies on erbium-doped fibre amplifiers (EDFAs)1,2. Yet, EDFAs only cover a portion of the low-loss spectrum of optical fibres. This has motivated the development of amplifiers operating beyond the erbium gain window. Pioneering work on optical parametric amplifiers (OPAs)3,4 using intrinsic third-order optical nonlinearity has led to demonstrations of increased channel capacity. OPAs offer high gain, can reach the 3-dB quantum limit for phase-preserving amplifiers and exhibit unidirectional operation. However, power requirements for highly nonlinear fibres3,5-8 or bulk waveguides9,10 have impeded their adoption. By contrast, OPAs based on integrated photonic circuits offer the advantages of substantially increased mode confinement and optical nonlinearity but have been limited in bandwidth11,12. We overcome this challenge by using low-loss gallium phosphide-on-silicon dioxide13-15 photonic integrated circuits (PICs) and attain up to 35 dB of parametric gain with waveguides only a few centimetres long in a compact footprint of 0.25 square millimetres. Fibre-to-fibre net gain exceeding 10 dB across an ultra-broad bandwidth of approximately 140 nm (that is, 17 THz) is achieved, with a threefold increase in the gain window compared with C-band EDFAs. We further demonstrate a high dynamic range for input signals, spanning six orders of magnitude, while maintaining a low noise figure. We exploit these performance characteristics to amplify coherent communication signals. This marks, to our knowledge, the first ultra-broadband, high-gain, continuous-wave amplification in a photonic chip, opening up new capabilities for next-generation integrated photonics.

Integrated all-optical nonreciprocity based on a moving index grating

Optical nonreciprocal devices are critical components in integrated photonic systems and scalable quantum technologies. We propose an all-optical approach to achieve integrated optical nonreciprocity utilizing a moving index grating. The grating is generated in a nonlinear optical waveguide through the Kerr effect by driving the waveguide with two counter-propagating pump fields of slightly different frequencies. Based on this moving index grating, our system exhibits exceptional versatility by achieving both nonreciprocal transmission and reflection of signal fields. We obtain an all-optical isolator that achieves near-unity isolation contrast and negligible insertion loss while effectively addressing the dynamic reciprocity challenge. Our protocol establishes a novel approach for achieving integrated all-optical nonreciprocal devices, paving the way for advanced integrated photonic circuits.

Investigation of Modal Characteristics of Silicon Nitride Ridge Waveguides for Enhanced Refractive Index Sensing

This paper investigates the wavelength-dependent sensitivity of a ridge waveguide based on a silicon nitride (Si3N4) platform, combining numerical analysis and experimental validation. In the first part, the modal characteristics of a Si3N4 ridge waveguide are analyzed in detail, focusing on the effective refractive index (neff), evanescent field ratio (EFR), and propagation losses (αprop). These parameters are critical for understanding the interplay of guided light with the surrounding medium and optimizing waveguide design for sensing applications. In the second part, the wavelength-dependent sensitivity of a racetrack ring resonator (RTRR) based on the Si3N4 waveguide is experimentally demonstrated. The results demonstrate a clear increase in the sensitivity of the RTRR, rising from 116.3 nm/RIU to 143.3 nm/RIU as the wavelength shifts from 1520 nm to 1600 nm. This trend provides valuable insights into the device's enhanced performance at longer wavelengths, underscoring its potential for applications requiring high sensitivity in this spectral range.

Silicon nitride grating coupler with suppressed waveguide backreflection and adaptive grate design

We present both experimental and simulation results for a fully etched, C-band GC fabricated in an 800 nm silicon nitride platform that significantly reduces backreflections. They are minimized by truncating the initial grates, which deflect reflected light at an oblique angle and excite higher-order modes in the tapered waveguide that is filtered out. Insertion losses resulting from this modification of the grating coupler are mitigated by an adaptive redesign of the grates that corrects incurred errors in the generated phase front. While 2.4 dB of excess insertion losses is first introduced by the grate truncation, reshaping of the grates into ellipses of varying eccentricities reduces the excess losses to less than 1 dB. At the same time, the suppression of the waveguide-to-waveguide backreflection by 10 dB relative to a baseline device without the grate truncation is maintained. This demonstrates improved backreflection with a minimal cost in coupling efficiency and without an increase in the complexity of the fabrication process. Experimentally, insertion losses of -8.8 dB are achieved with a 3 dB passband of 65 nm and less than -25 dB waveguide-to-waveguide backreflections. Simulations show that with the over- and under-cladding thicknesses of a previous fabrication run, this passband and backreflection level can be achieved with -6.4 dB insertion losses.

Machine learning with knowledge constraints for design optimization of microring resonators as a quantum light source

With careful design and integration, microring resonators can serve as a promising foundation for developing compact and scalable sources of non-classical light for quantum information processing. However, the current design flow is hindered by computational challenges and a complex, high-dimensional parameter space with interdependent variables. In this work, we present a knowledge-integrated machine learning framework based on Bayesian Optimization for designing squeezed light sources using microring resonators. Our model, after only 5 optimization rounds, identified two optimal structures with distinct cross-sectional areas and radii (65 [Formula: see text] and 110 [Formula: see text]), achieving escape efficiencies over 90% and on-chip squeezing levels of 7.48 dB and 9.86 dB, respectively. Our results demonstrate that by adaptively finding the coupling coefficient through BO, the model has identified optimal points in the over-coupled regions with superior performance. This optimization model is developed specifically for single resonators made of silicon nitride. However, its applicability extends beyond this, and it can be used to model structures with auxiliary rings or other materials like silicon carbide. Our approach is expected to streamline the design of other integrated photonic components, including Mach-Zehnder interferometers and directional couplers, for applications in quantum photonic circuits and optical neural networks.

Merging bound states in the continuum-driven ultrahigh sensing figure of merit in all-dielectric metasurfaces

Radiation-free photonic bound states in the continuum (BIC) in metasurfaces allow ultrahigh quality (Q) factor and strongly confined mode volume, which are extremely advantageous in the development of ultrasensitive microcavity sensors. However, the conventional isolated BICs are susceptible to failure due to symmetry breaking caused by fabrication imperfection and nonzero incident angle. Here, we propose a silicon nitride-based metasurface with multiple BIC merging. The merging of accidental BIC and symmetry-protected BIC can increase the Q-factor near the Brillouin zone Γ point and thus robustly induces a figure of merit (FOM) of refractive index sensing at small incident angles two orders of magnitude higher than that in isolated BIC configuration. Specifically, the FOM in merging BIC reaches 108 at a 2° incident angle. The BIC merging can be universally achieved in square lattices with C4 symmetry, and slower decay of Q-factor and higher FOM can further occur in hexagonal lattices benefiting from higher-order topological charges. The advantage of merging BIC is also maintained when considering in-plane and out-of-plane symmetry breaking. These results offer a unique design path for high-performance metasurface sensors and can be extended to other high-Q applications such as low-threshold lasers, nonlinear frequency conversion, and low-loss waveguides.

Silicon photonic microresonator-based high-resolution line-by-line pulse shaping

Optical pulse shaping stands as a formidable technique in ultrafast optics, radio-frequency photonics, and quantum communications. While existing systems rely on bulk optics or integrated platforms with planar waveguide sections for spatial dispersion, they face limitations in achieving finer (few- or sub-GHz) spectrum control. These methods either demand considerable space or suffer from pronounced phase errors and optical losses when assembled to achieve fine resolution. Addressing these challenges, we present a foundry-fabricated six-channel silicon photonic shaper using microresonator filter banks with inline phase control and high spectral resolution. Leveraging existing comb-based spectroscopic techniques, we devise a system to mitigate thermal crosstalk and enable the versatile use of our on-chip shaper. Our results demonstrate the shaper's ability to phase-compensate six comb lines at tunable channel spacings of 3, 4, and 5 GHz. Specifically, at a 3 GHz channel spacing, we showcase the generation of arbitrary waveforms in the time domain. This scalable design and control scheme holds promise in meeting future demands for high-precision spectral shaping capabilities.

Ultralow-Loss Integrated Photonics Enables Bright, Narrowband, Photon-Pair Sources

Photon-pair sources are critical building blocks for photonic quantum systems. Leveraging Kerr nonlinearity and cavity-enhanced spontaneous four-wave mixing, chip-scale photon-pair sources can be created using microresonators built on photonic integrated circuit. For practical applications, a high microresonator quality factor Q is mandatory to magnify photon-pair sources' brightness and reduce their linewidth. The former is proportional to Q^{4}, while the latter is inversely proportional to Q. Here, we demonstrate an integrated, microresonator-based, narrowband photon-pair source. The integrated microresonator, made of silicon nitride and fabricated using a standard CMOS foundry process, features ultralow loss down to 0.03  dB/cm and intrinsic Q factor exceeding 10^{7}. The photon-pair source has brightness of 1.17×10^{9}  Hz/mW^{2}/GHz and linewidth of 25.9 MHz, both of which are record values for silicon-photonics-based quantum light source. It further enables a heralded single-photon source with heralded second-order correlation g_{h}^{(2)}(0)=0.0037(5), as well as an energy-time entanglement source with a raw visibility of 0.973(9). Our work evidences the global potential of ultralow-loss integrated photonics to create novel quantum light sources and circuits, catalyzing efficient, compact, and robust interfaces to quantum communication and networks.

Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications

Sapphire has various applications in photonics due to its broadband transparency, high-contrast index, and chemical and physical stability. Photonics integration on the sapphire platform has been proposed, along with potentially high-performance lasers made of group III-V materials. In parallel with developing active devices for photonics integration applications, in this work, silicon nitride optical waveguides on a sapphire substrate were analyzed using the commercial software Comsol Multiphysics in a spectral window of 800~2400 nm, covering the operating wavelengths of III-V lasers, which could be monolithically or hybridly integrated on the same substrate. A high confinement factor of ~90% near the single-mode limit was obtained, and a low bending loss of ~0.01 dB was effectively achieved with the bending radius reaching 90 μm, 70 μm, and 40 μm for wavelengths of 2000 nm, 1550 nm, and 850 nm, respectively. Furthermore, the use of a pedestal structure or a SiO2 bottom cladding layer has shown potential to further reduce bending losses. The introduction of a SiO2 bottom cladding layer effectively eliminates the influence of the substrate's larger refractive index, resulting in further improvement in waveguide performance. The platform enables tightly built waveguides and small bending radii with high field confinement and low propagation losses, showcasing silicon nitride waveguides on sapphire as promising passive components for the development of high-performance and cost-effective PICs.

Chip-scale high-performance photonic microwave oscillator

Optical frequency division based on bulk or fiber optics provides unprecedented spectral purity for microwave oscillators. To extend the applications of this approach, the challenges are to develop miniaturized oscillators without trading off phase noise performance. Here, we report a chip-scale high-performance photonic microwave oscillator based on integrated electro-optical frequency division. Dual distributed-feedback lasers are co-self-injection locked to a single silicon nitride spiral resonator to provide a record-high-stability, fully on-chip optical reference. An integrated electro-optical frequency comb based on a thin-film lithium niobate phase modulator chip is leveraged to perform optical-to-microwave frequency division. The resulting integrated photonic microwave oscillator achieves a record-low phase noise for chip-scale oscillators. The results represent a major advance in high-performance, integrated photonic microwave oscillators for applications including signal processing, radar, timing, and coherent communications.

Bidirectional microwave-optical transduction based on integration of high-overtone bulk acoustic resonators and photonic circuits

Coherent interconversion between microwave and optical frequencies can serve as both classical and quantum interfaces for computing, communication, and sensing. Here, we present a compact microwave-optical transducer based on monolithic integration of piezoelectric actuators on silicon nitride photonic circuits. Such an actuator couples microwave signals to a high-overtone bulk acoustic resonator defined by the silica cladding of the optical waveguide core, suspended to enhance electromechanical and optomechanical couplings. At room temperature, this triply resonant piezo-optomechanical transducer achieves an off-chip photon number conversion efficiency of 1.6 × 10-5 over a bandwidth of 25 MHz at an input pump power of 21 dBm. The approach is scalable in manufacturing and does not rely on superconducting resonators. As the transduction process is bidirectional, we further demonstrate the synthesis of microwave pulses from a purely optical input. Capable of leveraging multiple acoustic modes for transduction, this platform offers prospects for frequency-multiplexed qubit interconnects and microwave photonics at large.

Ultrasound sensing with optical microcavities

Ultrasound sensors play an important role in biomedical imaging, industrial nondestructive inspection, etc. Traditional ultrasound sensors that use piezoelectric transducers face limitations in sensitivity and spatial resolution when miniaturized, with typical sizes at the millimeter to centimeter scale. To overcome these challenges, optical ultrasound sensors have emerged as a promising alternative, offering both high sensitivity and spatial resolution. In particular, ultrasound sensors utilizing high-quality factor (Q) optical microcavities have achieved unprecedented performance in terms of sensitivity and bandwidth, while also enabling mass production on silicon chips. In this review, we focus on recent advances in ultrasound sensing applications using three types of optical microcavities: Fabry-Perot cavities, π-phase-shifted Bragg gratings, and whispering gallery mode microcavities. We provide an overview of the ultrasound sensing mechanisms employed by these microcavities and discuss the key parameters for optimizing ultrasound sensors. Furthermore, we survey recent advances in ultrasound sensing using these microcavity-based approaches, highlighting their applications in diverse detection scenarios, such as photoacoustic imaging, ranging, and particle detection. The goal of this review is to provide a comprehensive understanding of the latest advances in ultrasound sensing with optical microcavities and their potential for future development in high-performance ultrasound imaging and sensing technologies.

Refining silicon nitride waveguide quality through femtosecond laser annealing

We present a method for modification of silicon nitride (Si3N4) waveguide resonators using femtosecond laser annealing. The quality (Q) factor of the waveguide resonators can be improved by approximately 1.3 times after annealing. Notably, waveguides that originally had a high Q value maintained their quality after the annealing process. However, those with a lower initial Q value experienced a noticeable improvement post-annealing. To characterize the annealing effect, the surface morphologies of Si3N4 films, both pre- and post-annealing, were analyzed using atomic force microscopy. The findings suggest a potential enhancement in surface refinement. Furthermore, Raman spectroscopy confirmed that the Si3N4 film's composition remains largely consistent with its original state within the annealing power range of 0.6-1.6 W. This research underscores the potential of femtosecond laser annealing as an efficient, cost-effective, and localized technique for fabricating low-loss integrated photonics.

Anneal-free ultra-low loss silicon nitride integrated photonics

Heterogeneous and monolithic integration of the versatile low-loss silicon nitride platform with low-temperature materials such as silicon electronics and photonics, III-V compound semiconductors, lithium niobate, organics, and glasses has been inhibited by the need for high-temperature annealing as well as the need for different process flows for thin and thick waveguides. New techniques are needed to maintain the state-of-the-art losses, nonlinear properties, and CMOS-compatible processes while enabling this next generation of 3D silicon nitride integration. We report a significant advance in silicon nitride integrated photonics, demonstrating the lowest losses to date for an anneal-free process at a maximum temperature 250 °C, with the same deuterated silane based fabrication flow, for nitride and oxide, for an order of magnitude range in nitride thickness without requiring stress mitigation or polishing. We report record low anneal-free losses for both nitride core and oxide cladding, enabling 1.77 dB m-1 loss and 14.9 million Q for 80 nm nitride core waveguides, more than half an order magnitude lower loss than previously reported sub 300 °C process. For 800 nm-thick nitride, we achieve as good as 8.66 dB m-1 loss and 4.03 million Q, the highest reported Q for a low temperature processed resonator with equivalent device area, with a median of loss and Q of 13.9 dB m-1 and 2.59 million each respectively. We demonstrate laser stabilization with over 4 orders of magnitude frequency noise reduction using a thin nitride reference cavity, and using a thick nitride micro-resonator we demonstrate OPO, over two octave supercontinuum generation, and four-wave mixing and parametric gain with the lowest reported optical parametric oscillation threshold per unit resonator length. These results represent a significant step towards a uniform ultra-low loss silicon nitride homogeneous and heterogeneous platform for both thin and thick waveguides capable of linear and nonlinear photonic circuits and integration with low-temperature materials and processes.

Sub-ppm Nanomechanical Absorption Spectroscopy of Silicon Nitride

Material absorption is a key limitation in nanophotonic systems; however, its characterization is often obscured by scattering and diffraction. Here we show that nanomechanical frequency spectroscopy can be used to characterize material absorption at the parts per million level and use it to characterize the extinction coefficient κ of stoichiometric silicon nitride (Si3N4). Specifically, we track the frequency shift of a high-Q Si3N4 trampoline in response to laser photothermal heating and infer κ from a model including stress relaxation and both conductive and radiative heat transfer. A key insight is the presence of two thermalization time scales: rapid radiative cooling of the Si3N4 film and slow parasitic heating of the Si chip. We infer κ ∼ 0.1-1 ppm for Si3N4 in the 532-1550 nm wavelength range, matching bounds set by waveguide resonators. Our approach is applicable to diverse photonic materials and may offer new insights into their potential.

Integrated photonics cascaded attenuation circuit towards single-photon detector calibration

Integrated photonics platforms are a key driver for advancing scalable photonics technologies. To rigorously characterize and calibrate on-chip integrated photodetectors for ultra-sensitive applications such as quantum sensing and photonic computing, a low-power calibration source down to single-photon levels is required. To date, such sources still largely rely on off-chip bulk or fiber optic setups to accurately attenuate a laser beam referenced to a sub-mW-level primary standard. Here, we demonstrate an on-chip integrated attenuation solution where a mW-level beam is coupled to a silicon nitride photonics circuit, and is attenuated by a series of cascaded directional couplers (DCs). With an integrated silicon photodetector, we measured an attenuation at 685 nm wavelength of up to 16.61 dB with an expanded uncertainty of 0.24 dB for one DC stage. With appropriate scattering mitigation, we infer from our results that a total attenuation of 149.5 dB (expanded uncertainty of 0.5 dB) can be obtained with 9 stages of cascaded DCs, thus allowing single-photon power levels to be obtained directly on-chip from a moderate-power laser source.

Broadband silicon nitride integrated polarization rotators at 780 nm

Polarization management, and in particular polarization rotation, is becoming increasingly important for photonic integrated circuits (PICs). While fiber-optic networks are generally polarization insensitive, the large aspect ratio of high-index-contrast PIC waveguides leads to a large polarization-dependent response of integrated components such as waveguides, optical cavities, couplers, etc. Although foundry-processed polarization rotators operating at telecom and datacom wavelengths (C- and O-band) have been demonstrated, to date, there have been few reports of devices operating at shorter wavelengths. This work demonstrates silicon nitride (SiN) polarization rotators operating from λ=700-1000 nm (the I/Z-band) that take advantage of optical coupling between two waveguiding layers in a standard foundry process. We demonstrate a broadband white-light polarization measurement setup that enables precise characterization of the polarization-dependent transmission of photonic waveguide devices. Measurements on foundry-processed devices confirm full TE-to-TM rotation exhibiting a maximum polarization extinction ratio (PER) approaching 20 dB (limited by our measurement setup), and an exceptionally large bandwidth of up to 160 nm with an insertion loss less than 0.2 dB. Beam propagation method (3D-BPM) simulations show good agreement with experimental data and enable the device parameters to be adjusted to accommodate different operating wavelengths and geometries with no changes to the existing foundry process. This work opens up opportunities for applications in quantum information and bio-sensing where operation at λ<1000nm is needed.

Lithium tantalate photonic integrated circuits for volume manufacturing

Electro-optical photonic integrated circuits (PICs) based on lithium niobate (LiNbO3) have demonstrated the vast capabilities of materials with a high Pockels coefficient1,2. They enable linear and high-speed modulators operating at complementary metal-oxide-semiconductor voltage levels3 to be used in applications including data-centre communications4, high-performance computing and photonic accelerators for AI5. However, industrial use of this technology is hindered by the high cost per wafer and the limited wafer size. The high cost results from the lack of existing high-volume applications in other domains of the sort that accelerated the adoption of silicon-on-insulator (SOI) photonics, which was driven by vast investment in microelectronics. Here we report low-loss PICs made of lithium tantalate (LiTaO3), a material that has already been adopted commercially for 5G radiofrequency filters6 and therefore enables scalable manufacturing at low cost, and it has equal, and in some cases superior, properties to LiNbO3. We show that LiTaO3 can be etched to create low-loss (5.6 dB m-1) PICs using a deep ultraviolet (DUV) stepper-based manufacturing process7. We demonstrate a LiTaO3 Mach-Zehnder modulator (MZM) with a half-wave voltage-length product of 1.9 V cm and an electro-optic bandwidth of up to 40 GHz. In comparison with LiNbO3, LiTaO3 exhibits a much lower birefringence, enabling high-density circuits and broadband operation over all telecommunication bands. Moreover, the platform supports the generation of soliton microcombs. Our work paves the way for the scalable manufacture of low-cost and large-volume next-generation electro-optical PICs.

Optimizing auxiliary laser heating for Kerr soliton microcomb generation

Auxiliary laser heating has become a widely adopted method for Kerr soliton frequency comb generation in optical microcavities, thanks to its reliable and easy-to-achieve merits for solving the thermal instability during the formation of dissipative Kerr solitons. Here, we conduct optimization of auxiliary laser heating by leveraging the distinct loss and absorption characteristics of different longitudinal and polarization cavity modes. We show that even if the auxiliary and pump lasers enter orthogonal polarization modes, their mutual photothermal balance can be efficient enough to maintain a cavity thermal equilibrium as the pump laser enters the red-detuning soliton regime, and by choosing the most suitable resonance for the auxiliary and pump lasers, the auxiliary laser power can be reduced to 20% of the pump laser and still be capable of warranting soliton generation. Moreover, we demonstrate soliton comb generation using integrated laser modules with a few milliwatt on-chip pump and auxiliary powers, showcasing the potential for further chip integration of the auxiliary laser heating method.

Modulation-free laser stabilization technique using integrated cavity-coupled Mach-Zehnder interferometer

Stable lasers play a significant role in precision optical systems where an electro-optic laser frequency stabilization system, such as the Pound-Drever-Hall technique, measures laser frequency and actively stabilizes it by comparing it to a frequency reference. Despite their excellent performance, there has been a trade-off between complexity, scalability, and noise measurement sensitivity. Here, we propose and experimentally demonstrate a modulation-free laser stabilization method using an integrated cavity-coupled Mach-Zehnder interferometer as a frequency noise discriminator. The proposed architecture maintains the sensitivity of the Pound-Drever-Hall architecture without the need for any modulation. This significantly simplifies the architecture and makes miniaturization into an integrated photonic platform easier. The implemented chip suppresses the frequency noise of a semiconductor laser by 4 orders-of-magnitude using an on-chip silicon microresonator with a quality factor of 2.5 × 106. The implemented passive photonic chip occupies an area of 0.456 mm2 and is integrated on AIM Photonics 100 nm silicon-on-insulator process.

CMOS-compatible 6-inch wafer integration of photonic waveguides and uniformity analysis

In this work, we demonstrate photonic fabrication by integrating waveguide resonators and groove structures using cost-effective i-line stepper lithography on a 6-inch full wafer. Low-loss silicon nitride (SiN) waveguide can be realized with the quality (Q) factor of waveguide resonators up to 105. In addition, groove structures are also integrated by the full-wafer process, providing long-term stability of coupling and package solutions. The uniformity of different die locations is verified within the full wafer, showing the good quality of the fabricated photonic devices. This process integration of photonic devices provides the potential for mass-productive, high-yield, and high-uniformity manufacturing.

Topological corner states in a silicon nitride photonic crystal membrane with a large bandgap

The theory of band topology has inspired the discovery of various topologically protected states in the regime of photonics. It has led to the development of topological photonic devices with robust property and versatile functionalities, like unidirectional waveguides, compact power splitters, high-Q resonators, and robust lasers. These devices mainly rely on the on-chip photonic crystal (PhC) in Si or III-V compound materials with a fairly large bandgap. However, the topological designs have rarely been applied to the ultra-low-loss silicon nitride (SiN) platform which is widely used in silicon photonics for important devices and integrated photonic circuits. It is mainly hindered by the relatively low refractive index. In this work, we revealed that a rhombic PhC can open a large bandgap in the SiN slab, and thus support robust topological corner states stemming from the quantization of the dipole moments. Meanwhile, we propose the inclination angle of rhombic lattice, as a new degree of freedom, to manipulate the characteristics of topological states. Our work shows a possibility to further expand the topological protection and design flexibility to SiN photonic devices.

Integrated waveguide coupled ultralow-loss multimode waveguides based on silicon nitride resonators

On-chip micro-ring resonators (MRRs) with low loss and large free spectral ranges (FSRs) are important for photonic devices. So far, ultra-low-loss silicon-nitride (Si3N4) waveguides are primarily fabricated in laboratories, as they often demand special processes to reduce transmission losses. While, Si3N4 waveguides fabricated by the standard multi-project wafer (MPW)-based processes often suffer from significant sidewall scattering, resulting in high scattering losses. Here, we present an innovative approach to photonics by introducing a compact and multi-mode structure. This approach significantly reduces the contact between the optical field and the rough sidewalls in the high-confinement Si3N4 waveguide. By incorporating modified Euler bends, and a weakly tapered gap directional coupler, adiabatic transmission with simultaneous ultra-low loss and compact size is achieved even in 7-µm wide waveguide. Results show that the intrinsic quality factor Qi of MRR is (6.8 ± 0.4) × 106 at the wavelength of 1550 nm, which is approximately four times higher than the previously reported by the same fabrication process. An ultra-low loss of 0.051 ± 0.003 dB/cm is achieved based on the standard LIGENTEC-AN800 technology. This accomplishment addresses a critical challenge in high-confinement waveguides. Our work provides new insights into the low propagation loss in Si3N4 waveguides and provides a broader prospect for integrated photonics in the ultra-high-Q regime.

A chip-scale second-harmonic source via self-injection-locked all-optical poling

Second-harmonic generation allows for coherently bridging distant regions of the optical spectrum, with applications ranging from laser technology to self-referencing of frequency combs. However, accessing the nonlinear response of a medium typically requires high-power bulk sources, specific nonlinear crystals, and complex optical setups, hindering the path toward large-scale integration. Here we address all of these issues by engineering a chip-scale second-harmonic (SH) source based on the frequency doubling of a semiconductor laser self-injection-locked to a silicon nitride microresonator. The injection-locking mechanism, combined with a high-Q microresonator, results in an ultra-narrow intrinsic linewidth at the fundamental harmonic frequency as small as 41 Hz. Owing to the extreme resonant field enhancement, quasi-phase-matched second-order nonlinearity is photoinduced through the coherent photogalvanic effect and the high coherence is mapped on the generated SH field. We show how such optical poling technique can be engineered to provide efficient SH generation across the whole C and L telecom bands, in a reconfigurable fashion, overcoming the need for poling electrodes. Our device operates with milliwatt-level pumping and outputs SH power exceeding 2 mW, for an efficiency as high as 280%/W under electrical driving. Our findings suggest that standalone, highly-coherent, and efficient SH sources can be integrated in current silicon nitride photonics, unlocking the potential of χ(2) processes in the next generation of integrated photonic devices.

Dynamic Spectral Modulation on Meta-Waveguides Utilizing Liquid Crystal

The integration of metasurfaces and optical waveguides is gradually attracting the attention of researchers because it allows for more efficient manipulation and guidance of light. However, most of the existing studies focus on passive devices, which lack dynamic modulation. This work utilizes the meta-waveguides with liquid crystal(LC) to modulate the on-chip spectrum, which is the first experimentally verified, to the authors' knowledge. By applying a voltage, the refractive index of the liquid crystal surrounding the meta-waveguides can be tuned, resulting in a blue shift of the spectrum. The simulation shows that the 18.4 dB switching ratio can be achieved at 1550 nm. The meta-waveguides are prepared using electron beam lithography (EBL), and the improved transmittance of the spectrum in the short wavelength is experimentally verified, which is consistent with the simulation trend. At 1551.64 nm wavelength, the device achieves a switching ratio of ≈16 dB with an active area of 8 µm × 0.4 µm. Based on this device, an optoelectronic computing architecture for the Hadamard matrix product and a novel wavelength selection switch are proposed. This work offers a promising avenue for on-chip dynamic modulation in integrated photonics, which has the advantage of a compact active area, fast response time, and low energy consumption compared to conventional thermal-light modulation.

Library of single-etch silicon nitride grating couplers for low-loss and fabrication-robust fiber-chip interconnection

Silicon nitride (Si3N4) waveguides become an appealing choice to realize complex photonic integrated circuits for applications in telecom/datacom transceivers, sensing, and quantum information sciences. However, compared to high-index-contrast silicon-on-insulator platform, the index difference between the Si3N4 waveguide core and its claddings is more moderate, which adversely affects the development of vertical grating-coupled optical interfaces. Si3N4 grating couplers suffer from the reduced strength, therefore it is more challenging to radiate all the waveguide power out of the grating within a beam size that is comparable to the mode field diameter of standard optical fibers. In this work, we present, by design and experiments, a library of low-loss and fabrication-tolerant surface grating couplers, operating at 1.55 μm wavelength range and standard SMF-28 fiber. Our designs are fabricated on 400 nm Si3N4 platform using single-etch fabrication and foundry-compatible low-pressure chemical vapor deposition wafers. Experimentally, the peak coupling loss of - 4.4 dB and - 3.9 dB are measured for uniform couplers, while apodized grating couplers yield fiber-chip coupling loss of - 2.9 dB, without the use of bottom mirrors, additional overlays, and multi-layered grating arrangements. Beside the single-hero demonstrations, over 130 grating couplers were realized and tested, showing an excellent agreement with finite difference time domain designs and fabrication-robust performance. Demonstrated grating couplers are promising for Si3N4 photonic chip prototyping by using standard optical fibers, leveraging low-cost and foundry-compatible fabrication technologies, essential for stable and reproducible large-volume device development.

Fabry-Perot Bragg grating nanoresonator with ultrahigh intrinsic Q based on low-loss silicon nitride

Photonic integrated circuits based on ultralow loss silicon nitride waveguides have shown significant promise for realizing high-performance optical systems in a compact and scalable form factor. For the first time, we have developed a Fabry-Perot Bragg grating nanoresonator based on silicon nitride on silicon dioxide platform with an ultra-high intrinsic quality factor of 19.3 million. By combining the introduction of tapered grating between cavity and periodic Bragg grating, increasing the width of cavity to multi-mode region and optimized annealing strategy for Si3N4 film, the propagation loss is reduced to around 0.014 dB/cm. Fabry-Perot Bragg grating nanoresonator can be easily implemented in a simple straight waveguide occupying a minimal amount of space. Therefore, it is a key component to build a high performance photonic integrated circuit for many applications.

Gain optimization of an erbium-ytterbium co-doped amplifier via a Si3N4 photonic platform

Erbium-doped waveguide amplifiers enable the integration of various active functions on a silicon platform. Er3+ can provide the basis for efficient optical amplification of photonic integrated circuits, but the gain is limited by cooperative upconversion leading to doping concentration limitations and insufficient optimization of the waveguide structure. In this paper, an erbium-ytterbium co-doped Al2O3 amplifier has been innovatively implemented on a low loss Si3N4 waveguide by careful design and optimization with the finite difference method. A more accurate and comprehensive theoretical model of erbium-ytterbium co-doping is established, with consideration of upconversions, energy transfer, amplified spontaneous radiation and propagation loss to perform optimization of the high-gain erbium-ytterbium co-doped waveguide amplifier. The optimized waveguide amplifier achieves a small-signal gain of more than 36 dB at 1550 nm under Er3+ concentration of 3 × 1020 cm-3 and Yb3+ concentration of 3 × 1021 cm-3. Endowing Si3N4 photonic integrated circuits with gain can enable the miniaturization of various on-chip based active devices.

C- and O-Band Dual-Polarization Fiber-to-Chip Grating Couplers for Silicon Nitride Photonics

Highly efficient coupling of light from an optical fiber to silicon nitride (SiN) photonic integrated circuits (PICs) is experimentally demonstrated with simple and fabrication-tolerant grating couplers (GC). Fully etched amorphous silicon gratings are formed on top of foundry-produced SiN PICs in a back-end-of-the-line (BEOL) process, which is compatible with 248 nm deep UV lithography. Metallic back reflectors are introduced to enhance the coupling efficiency (CE) from -1.11 to -0.44 dB in simulation and from -2.2 to -1.4 dB in experiments for the TE polarization in the C-band. Furthermore, these gratings can be optimized to couple both TE and TM polarizations with a CE below -3 dB and polarization-dependent losses under 1 dB over a wavelength range of 40 nm in the O-band. This elegant approach offers a simple solution for the realization of compact and, at the same time, highly efficient coupling schemes in SiN PICs.

Toward integrated tantalum pentoxide optical parametric oscillators

We present a hybrid waveguide-fiber optical parametric oscillator (OPO) exploiting degenerate four-wave mixing in tantalum pentoxide. The OPO, pumped with ultrashort pulses at 1.55  µm wavelength, generated tunable idler pulses with up to 4.1 pJ energy tunable center wavelength between 1.63  µm and 1.68 µm. An upper bound for the total tolerable cavity loss of 32 dB was found, rendering a chip-integrated OPO feasible as a compact and robust light source.

Hydrophobic Silica Microcavities with Sustainable Nonlinear Photonic Performance

Ultrahigh quality factor (Q) microcavities have been emerging as appealing compact photonic platforms for various applications. The Q factor plays a critical role in determining the nonlinear optical performance of a microcavity. However, a silica microcavity suffers from severe degradation of its Q value over time during storage or use in air due to the accumulating surface absorption loss, which would deteriorate their nonlinear photonic performance. Here, we report a new type of ultrahigh Q silica microcavity that effectively prevents Q degradation over time. The Q values of the devices remain unchanged over time under storage in air. Optical frequency combs are generated with sustainable ultralow threshold performance over the course of time from the devices in open air. This approach would greatly facilitate ultrahigh Q silica-based photonic devices for next generation photonic applications.

3D integration enables ultralow-noise isolator-free lasers in silicon photonics

Photonic integrated circuits are widely used in applications such as telecommunications and data-centre interconnects1-5. However, in optical systems such as microwave synthesizers6, optical gyroscopes7 and atomic clocks8, photonic integrated circuits are still considered inferior solutions despite their advantages in size, weight, power consumption and cost. Such high-precision and highly coherent applications favour ultralow-noise laser sources to be integrated with other photonic components in a compact and robustly aligned format-that is, on a single chip-for photonic integrated circuits to replace bulk optics and fibres. There are two major issues preventing the realization of such envisioned photonic integrated circuits: the high phase noise of semiconductor lasers and the difficulty of integrating optical isolators directly on-chip. Here we challenge this convention by leveraging three-dimensional integration that results in ultralow-noise lasers with isolator-free operation for silicon photonics. Through multiple monolithic and heterogeneous processing sequences, direct on-chip integration of III-V gain medium and ultralow-loss silicon nitride waveguides with optical loss around 0.5 decibels per metre are demonstrated. Consequently, the demonstrated photonic integrated circuit enters a regime that gives rise to ultralow-noise lasers and microwave synthesizers without the need for optical isolators, owing to the ultrahigh-quality-factor cavity. Such photonic integrated circuits also offer superior scalability for complex functionalities and volume production, as well as improved stability and reliability over time. The three-dimensional integration on ultralow-loss photonic integrated circuits thus marks a critical step towards complex systems and networks on silicon.

Linewidth narrowing in self-injection-locked on-chip lasers

Stable laser emission with narrow linewidth is of critical importance in many applications, including coherent communications, LIDAR, and remote sensing. In this work, the physics underlying spectral narrowing of self-injection-locked on-chip lasers to Hz-level lasing linewidth is investigated using a composite-cavity structure. Heterogeneously integrated III-V/SiN lasers operating with quantum-dot and quantum-well active regions are analyzed with a focus on the effects of carrier quantum confinement. The intrinsic differences are associated with gain saturation and carrier-induced refractive index, which are directly connected with 0- and 2-dimensional carrier densities of states. Results from parametric studies are presented for tradeoffs involved with tailoring the linewidth, output power, and injection current for different device configurations. Though both quantum-well and quantum-dot devices show similar linewidth-narrowing capabilities, the former emits at a higher optical power in the self-injection-locked state, while the latter is more energy-efficient. Lastly, a multi-objective optimization analysis is provided to optimize the operation and design parameters. For the quantum-well laser, minimizing the number of quantum-well layers is found to decrease the threshold current without significantly reducing the output power. For the quantum-dot laser, increasing the quantum-dot layers or density in each layer increases the output power without significantly increasing the threshold current. These findings serve to guide more detailed parametric studies to produce timely results for engineering design.

Fourier Synthesis Dispersion Engineering of Photonic Crystal Microrings for Broadband Frequency Combs

Dispersion engineering of microring resonators is crucial for optical frequency comb applications, to achieve targeted bandwidths and powers of individual comb teeth. However, conventional microrings only present two geometric degrees of freedom - width and thickness - which limits the degree to which dispersion can be controlled. We present a technique where we tune individual resonance frequencies for arbitrary dispersion tailoring. Using a photonic crystal microring resonator that induces coupling to both directions of propagation within the ring, we investigate an intuitive design based on Fourier synthesis. Here, the desired photonic crystal spatial profile is obtained through a Fourier relationship with the targeted modal frequency shifts, where each modal shift is determined based on the corresponding effective index modulation of the ring. Experimentally, we demonstrate several distinct dispersion profiles over dozens of modes in transverse magnetic polarization. In contrast, we find that the transverse electric polarization requires a more advanced model that accounts for the discontinuity of the field at the modulated interface. Finally, we present simulations showing arbitrary frequency comb spectral envelope tailoring using our Frequency synthesis approach.

Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides

Silicon (Si) photonics has recently emerged as a key enabling technology in many application fields thanks to the mature Si process technology, the large silicon wafer size, and promising Si optical properties. The monolithic integration by direct epitaxy of III-V lasers and Si photonic devices on the same Si substrate has been considered for decades as the main obstacle to the realization of dense photonics chips. Despite considerable progress in the last decade, only discrete III-V lasers grown on bare Si wafers have been reported, whatever the wavelength and laser technology. Here we demonstrate the first semiconductor laser grown on a patterned Si photonics platform with light coupled into a waveguide. A mid-IR GaSb-based diode laser was directly grown on a pre-patterned Si photonics wafer equipped with SiN waveguides clad by SiO2. Growth and device fabrication challenges, arising from the template architecture, were overcome to demonstrate more than 10 mW outpower of emitted light in continuous wave operation at room temperature. In addition, around 10% of the light was coupled into the SiN waveguides, in good agreement with theoretical calculations for this butt-coupling configuration. This work lift an important building block and it paves the way for future low-cost, large-scale, fully integrated photonic chips.

A heterogeneously integrated lithium niobate-on-silicon nitride photonic platform

The availability of thin-film lithium niobate on insulator (LNOI) and advances in processing have led to the emergence of fully integrated LiNbO₃ electro-optic devices. Yet to date, LiNbO₃ photonic integrated circuits have mostly been fabricated using non-standard etching techniques and partially etched waveguides, that lack the reproducibility achieved in silicon photonics. Widespread application of thin-film LiNbO₃ requires a reliable solution with precise lithographic control. Here we demonstrate a heterogeneously integrated LiNbO₃ photonic platform employing wafer-scale bonding of thin-film LiNbO₃ to silicon nitride (Si₃N₄) photonic integrated circuits. The platform maintains the low propagation loss (<0.1 dB/cm) and efficient fiber-to-chip coupling (<2.5 dB per facet) of the Si₃N₄ waveguides and provides a link between passive Si₃N₄ circuits and electro-optic components with adiabatic mode converters experiencing insertion losses below 0.1 dB. Using this approach we demonstrate several key applications, thus providing a scalable, foundry-ready solution to complex LiNbO₃ integrated photonic circuits.

Tunable photo-induced second-harmonic generation in a mode-engineered silicon nitride microresonator

All-optical poling enables reconfigurable and efficient quasi-phase-matching for second-order parametric frequency conversion in silicon nitride integrated photonics. Here, we report broadly tunable milliwatt-level second-harmonic generation in a small free spectral range silicon nitride microresonator, where the pump and its second-harmonic are both always on the fundamental mode. By carefully engineering the light coupling region between the bus and microresonator, we simultaneously achieve critical coupling of the pump as well as efficient extraction of second-harmonic light from the cavity. Thermal tuning of second-harmonic generation is demonstrated with an integrated heater in a frequency grid of 47 GHz over a 10 nm band.

Deuterated SiNx: a low-loss, back-end CMOS-compatible platform for nonlinear integrated optics

Silicon nitride (SiN) has surged into prominence as a material for photonic-integrated circuits (PICs) in the past decade, well regarded for its broadband transparency, compatibility with complementary metal oxide semiconductor (CMOS) fabrication processes and high optical bandgap that avoids two-photon absorption. However, current fabrication methods result in users having to choose between low thermal budgets and low losses, which are suboptimal given that both are necessary to facilitate a wide range of applications. Recently, works have emerged featuring PICs fabricated using deuterated silicon nitride (SiNx:D) - SiNx films grown using deuterated precursors instead of conventional hydrogenated ones. This decreases material absorption near the telecommunications bands at 1.55 µm previously present due to parasitic silicon-hydrogen and nitrogen-hydrogen bonds, attaining low-loss PICs realised using a low temperature, back-end-of-line CMOS-compatible fabrication plasma-enhanced chemical vapour deposition process. These devices have shown promise for both linear and nonlinear applications and the platform has the potential to be instrumental in realising highly efficient chips with co-packaged electronics and photonics devices. This paper reviews recent developments on the SiNx:D platform and provides a glance at future advancements for this highly promising material.

Ultrafast tunable lasers using lithium niobate integrated photonics

Early works1 and recent advances in thin-film lithium niobate (LiNbO3) on insulator have enabled low-loss photonic integrated circuits2,3, modulators with improved half-wave voltage4,5, electro-optic frequency combs6 and on-chip electro-optic devices, with applications ranging from microwave photonics to microwave-to-optical quantum interfaces7. Although recent advances have demonstrated tunable integrated lasers based on LiNbO3 (refs. 8,9), the full potential of this platform to demonstrate frequency-agile, narrow-linewidth integrated lasers has not been achieved. Here we report such a laser with a fast tuning rate based on a hybrid silicon nitride (Si3N4)-LiNbO3 photonic platform and demonstrate its use for coherent laser ranging. Our platform is based on heterogeneous integration of ultralow-loss Si3N4 photonic integrated circuits with thin-film LiNbO3 through direct bonding at the wafer level, in contrast to previously demonstrated chiplet-level integration10, featuring low propagation loss of 8.5 decibels per metre, enabling narrow-linewidth lasing (intrinsic linewidth of 3 kilohertz) by self-injection locking to a laser diode. The hybrid mode of the resonator allows electro-optic laser frequency tuning at a speed of 12 × 1015 hertz per second with high linearity and low hysteresis while retaining the narrow linewidth. Using a hybrid integrated laser, we perform a proof-of-concept coherent optical ranging (FMCW LiDAR) experiment. Endowing Si3N4 photonic integrated circuits with LiNbO3 creates a platform that combines the individual advantages of thin-film LiNbO3 with those of Si3N4, which show precise lithographic control, mature manufacturing and ultralow loss11,12.

Photonic multiplexing techniques for neuromorphic computing

The simultaneous advances in artificial neural networks and photonic integration technologies have spurred extensive research in optical computing and optical neural networks (ONNs). The potential to simultaneously exploit multiple physical dimensions of time, wavelength and space give ONNs the ability to achieve computing operations with high parallelism and large-data throughput. Different photonic multiplexing techniques based on these multiple degrees of freedom have enabled ONNs with large-scale interconnectivity and linear computing functions. Here, we review the recent advances of ONNs based on different approaches to photonic multiplexing, and present our outlook on key technologies needed to further advance these photonic multiplexing/hybrid-multiplexing techniques of ONNs.

Broadband second-harmonic generation in an angle-cut lithium niobate-on-insulator waveguide by a temperature gradient

Frequency conversion via nonlinear wave mixing is an important technology to broaden the spectral range of lasers, propelling their applications in optical communication, spectroscopy, signal processing, and quantum information. Many applications require not only a high conversion efficiency but also a broad phase matching bandwidth. Here, we demonstrate broadband birefringence phase matching (BPM) second-harmonic generation (SHG) in angle-cut lithium niobate-on-insulator (LNOI) ridge waveguides based on a temperature gradient scheme. The bandwidth and shift of the phase matching spectrum can be effectively tuned by controlling the temperature gradient of the waveguide. Broadband SHG of a telecom C-band femtosecond laser is also demonstrated. The approach may open a new avenue for tunable broadband nonlinear frequency conversion in various integrated photonics platforms.

Large group delay and low loss optical delay line based on chirped waveguide Bragg gratings

On-chip optical delay lines (ODLs) based on chirped waveguide Bragg gratings (CWBG) have attracted much attention in recent years. Although CWBGs are well developed, the CWBG which have large group delay (GD), large delay-bandwidth product and low loss while is circulator-free have little been investigated so far. In this work, we propose and experimentally demonstrate such a CWBG-based ODL. This device is fabricated on a low-loss 800-nm-height silicon nitride platform, combining 20.11-cm long index-chirped multi-mode spiral waveguide antisymmetric Bragg gratings with a directional coupler. The bandwidth of this circulator-free ODL is 23 nm. The total GD is 2864 ps and the delay-bandwidth product is 65.87 ns·nm, which both are the largest values achieved by on-chip CWBG reported to our knowledge. Its loss is 1.57 dB/ns and the total insertion loss of the device is 6 dB at the central wavelength near 1550 nm. This integrated CWBG can be explored in practical applications including microwave photonics, temporal optics, and optical communication.

High-performance Kerr microresonator optical parametric oscillator on a silicon chip

Optical parametric oscillation (OPO) is distinguished by its wavelength access, that is, the ability to flexibly generate coherent light at wavelengths that are dramatically different from the pump laser, and in principle bounded solely by energy conservation between the input pump field and the output signal/idler fields. As society adopts advanced tools in quantum information science, metrology, and sensing, microchip OPO may provide an important path for accessing relevant wavelengths. However, a practical source of coherent light should additionally have high conversion efficiency and high output power. Here, we demonstrate a silicon photonics OPO device with unprecedented performance. Our OPO device, based on the third-order (χ⁽³⁾) nonlinearity in a silicon nitride microresonator, produces output signal and idler fields widely separated from each other in frequency ( > 150 THz), and exhibits a pump-to-idler conversion efficiency up to 29 % with a corresponding output idler power of > 18 mW on-chip. This performance is achieved by suppressing competitive processes and by strongly overcoupling the output light. This methodology can be readily applied to existing silicon photonics platforms with heterogeneously-integrated pump lasers, enabling flexible coherent light generation across a broad range of wavelengths with high output power and efficiency.