Interlayer exciton mediated second harmonic generation in bilayer MoS2

Artificial Stacking Dependences of Band Structures and Second-Harmonic Generations in Bilayer Hexagonal Boron Nitride

Stacking order critically influences the optoelectronic properties of 2D van der Waals materials. Here, first-principles calculations were performed to study the geometries, band structures, and second-harmonic generation (SHG) of hexagonal boron nitride (h-BN) bilayers constructed by the relative shifts and rotations between h-BN layers. Our results indicate that the stability, interlayer coupling, and band structures of h-BN bilayers are sensitive to the stacking orders. For interlayer sliding, the direction and size of lateral displacement obviously affect the band gap and components at the band edge. By contrast, the band structure of twisted h-BN bilayers is highly angle-dependent, and when the sum of twist angles in two moiré superlattices is 60°, they have similar band structures due to identical band folding. As for the second-order susceptibility, interlayer sliding tends to enhance the SHG intensity compared to that of the original AA stacking. When the incident angle of the pump light deviates from the normal direction of the h-BN bilayer, the change in lattice symmetry induced by interlayer sliding results in distinct variations in SHG patterns, thereby facilitating identification of the corresponding structures through polarization-resolved SHG spectroscopy. For twisted configurations, as the rotation angle increases from 0 to 60°, the evolution of SHG intensity departs significantly from the coherent superposition model due to the strong exciton effects in h-BN bilayers. Although the interlayer rotation preserves the SHG polarization image, the experimental measurement of relative SHG intensity enables the determination of the rotation angle, which allows for distinguishing structures of twisted h-BN bilayers.

Electric-Field-Induced Giant Resonant Enhancement of Second Harmonic Generation in Two-Dimensional Hybrid Perovskite

For the advancement of optical information technology, nonlinear optical systems with tunable and reconfigurable functionality are essential. Electric-field-induced second harmonic generation (EFISH) is a promising approach, enabling electrical control over nonlinear light-matter interactions. However, efficient, simple, and highly adaptable EFISH materials or systems have yet to be reported. In this study, we demonstrate that two-dimensional (2D) organic-inorganic hybrid perovskites (OIHPs) exhibit a remarkable EFISH performance with significant tunability. The second harmonic generation is dramatically enhanced at excitonic resonance, increasing by more than 2 orders of magnitude when a 70 kV/cm electric field is applied. In addition, this efficient EFISH is observed even in nonpolar and nonchiral 2D-OIHPs. This study opens up the broader potential of low-dimensional OIHPs as nonlinear optical materials, leading to the development of tunable and dynamic nonlinear optical systems with simple and versatile material designs.

Deep-ultraviolet second harmonic generation down to 150 nm in a quartz crystal with chirped dual-periodic superstructure

Deep-ultraviolet (DUV) second harmonic generation (SHG) can realize the coherent sources for some modern equipment and optical spectroscopy measurements, however, that with nonlinear crystals is still a long-standing challenge due to the difficulty in phase-matching dependent on refractive dispersion relationship ruled by Lorentz model. Herein, we originally introduced the chirp into the additional periodic phase (APP) phase-matching and realized novel phase-matching conditions with the chirped additional periodic phase (CAPP) for DUV SHG with a CAPP quartz. The unprecedented tunable DUV SHG was realized with a wavelength from 150 to 203 nm (corresponding to a photon energy of 8.26∼6.1 eV). The developed light source presents the first SHG below 165 nm and would find promising applications in modern equipment such as angle-resolved photoemission spectroscopy (ARPES), optical atomic clocks, and DUV photodissociation dynamics. This strategy breaks the limitation of the Lorentz model for SHG and would be applicable for the extreme SHG approaching the transmittance edge of the nonlinear solid media.

Structure-Dependent Nonlinear Optical Effects in Spiral WS2 Nanosheets

Spiral transition-metal dichalcogenides with broken crystal inversion symmetry and significant second-order nonlinear responses have shown great promise for further nonlinear optical applications. However, various spiral structures will be formed during their synthesis process, their second harmonic generation (SHG) varying with the layer thickness and which of them manifesting the most promising SHG response are still unresolved. Here, the layer-dependent SHG response is investigated for four representative spiral WS2 with different screw and twist angles, including aligned- and twisted-triangular spiral structures, aligned- and twisted-hexagonal spiral structures, respectively. Experimental results demonstrate that both aligned- and twisted-hexagonal spiral WS2 present weak SHG response. In contrast, the SHG signal of the aligned-triangular spiral WS2 almost quadratically increases with the lift of their thickness, which is two orders of magnitude stronger than hexagonal structures. Moreover, an oscillating layer-dependence SHG response for twisted-triangular spiral WS2 has been attributed to the restored inversion symmetry. The underlying mechanism has been explored by the evolution of their crystal symmetry. The results not only disclose that the nonlinear response of the spiral WS2 can be tailored on-demand through the novel structural designs, but also pave the way to scalable integrated photonics and lab-on-a-chip quantum devices based on spiral layered materials.

Circular Dichroism and Interlayer Exciton Hall Effect in Transition Metal Dichalcogenides Homobilayers

In van der Waals (vdW) architectures of transition metal dichalcogenides (TMDCs), the coupling between interlayer exciton and quantum degrees of freedom opens unprecedented opportunities for excitonic physics. Taking the MoSe2 homobilayer as representative, we identify that the interlayer registry defines the nature and dynamics of the lowest-energy interlayer exciton. The large layer polarization (Pn) is proved, which ensures the formation of layer-resolved interlayer excitons. In particular, sliding ferroelectric polarization couples to the dipole orientation of the interlayer exciton, thus achieving the long-sought electric control of excitonic states. In line with the phase winding of the Bloch states under C3 rotational symmetry, we clarify the valley optical circular dichroism, enriching the exciton valleytronics. We also elucidate the Hall effect of the layer- and valley-polarized interlayer excitons, which advances our understanding of the spatial transport properties of the composite particles and provides new insights into the exciton-based applications.

Excitonic Effects on the Ultrafast Nonlinear Optical Response of MoS2 and Fluorinated Graphene/MoS2 Heterostructure Films for Photonic Applications

In the present work, the ultrafast nonlinear optical (NLO) response of some molybdenum disulfide (MoS2), fluorinated graphene (FG), and FG/MoS2 heterostructure thin films was studied using the Z-scan and optical Kerr effect techniques employing femtosecond laser pulses at different excitation wavelengths (i.e., 400, 570, 610, 660, 800, and 1200 nm). The experiments have shown that the NLO response of the MoS2 and MoS2/FG films was significantly enhanced when the films were excited with 400, 610, and 660 nm laser pulses due to resonance effects with the close-lying excitons in these nanostructures. For a better evaluation of the resonant enhancement of the NLO response, measurements were also carried out at off-resonant wavelengths, i.e., at 570, 800, and 1200 nm. The presence of excitons in the MoS2 and MoS2/FG films resulted in strong saturable absorption and self-defocusing, with exceptionally large values of third-order susceptibilities χ(3) ranging from 10-12 to 10-13 esu. In addition, the NLO response of the MoS2/FG heterostructure was found to be stronger than that of the individual MoS2 and FG films, most probably attributed to interlayer carrier transfer. The determined NLO parameters of the studied nanostructures were found to be comparable to, and in some cases exceeded, those of other reported 2D materials known to exhibit a strong NLO response as well. These findings not only advance the fundamental understanding of the contributions of excitons on the NLO response/properties of transition metal dichalcogenide-based ultrathin films but also highlight the importance of excitons for tailoring their NLO response in view of various applications in advanced optoelectronics and photonic devices.

Layer Number and Stacking Engineering of MoS2 Crystals for High-Performance Polarization-Sensitive Photodetector

The layer and stacking engineering of two-dimensional (2D) transition-metal dichalcogenides (TMDs) gives rise to novel phenomena and multiapplications; thus, TMDs have garnered considerable attention. However, the precisely customized fabrication of stacked 2D materials to date is largely limited to the lack of effective and controllable growth strategies, prone to the unpredictable stacking orders and randomly distributed nucleation sites. Here, we devise an optimized chemical vapor deposition approach for modulating the MoS2 single crystals from monolayer to multilayer with diverse stacking configurations. Significantly, the phototransistor based on monolayer MoS2 single crystal exhibits an ultrasensitive performance with a high photoresponsivity (R) of 3.3 × 104 A W-1 and a remarkable detectivity (D*) of above 1.7 × 1014 Jones at 405 nm light illumination. Ultralow-frequency and angle-resolved polarized Raman spectroscopy is used to systematically uncover the delicate interlayer interactions and crystallographic anisotropy. Moreover, the polarization-sensitive photodetectors using 1-3L MoS2 show a layer number-dependent anisotropic performance, with dichroism ratios of 1.36, 1.44, and 1.52. This work offers a promising method to not only enable the fabrication of new customized layer-, stacking-, and twist-2D materials but also provides the foundation for the development of advanced polarization-sensitive and optoelectronic devices based on stacking transitions.

Enhanced Second-Harmonic Generation in Thin-Film Lithium Niobate Circular Bragg Nanocavity

Second-order nonlinearity gives rise to many distinctive physical phenomena, e.g., second-harmonic generation, which play an important role in fundamental science and various applications. Lithium niobate, one of the most widely used nonlinear crystals, exhibits strong second-order nonlinear effects and electro-optic properties. However, its moderate refractive index and etching sidewall angle limit its capability in confining light into nanoscales, thereby restricting its application in nanophotonics. Here, we exploit nanocavities formed by second-order circular Bragg gratings, which support resonant anapole modes, to achieve a 42 000-fold enhanced second-harmonic generation in thin-film lithium niobate. The nanocavity exhibits a record-high normalized conversion efficiency of 1.21 × 10-2 cm2/GW under the pump intensity of 1.9 MW/cm2. Besides, we also show s- and p-polarization-independent second-harmonic generation in elliptical Bragg nanocavities. This work could inspire the study of nonlinear optics at the nanoscale on thin-film lithium niobate, as well as other novel photonic platforms.

Advanced Characterization of the Spatial Variation of Moiré Heterostructures and Moiré Excitons

In this short review, an overview of recent progress in deploying advanced characterization techniques is provided to understand the effects of spatial variation and inhomogeneities in moiré heterostructures over multiple length scales. Particular emphasis is placed on correlating the impact of twist angle misalignment, nano-scale disorder, and atomic relaxation on the moiré potential and its collective excitations, particularly moiré excitons. Finally, future technological applications leveraging moiré excitons are discussed.

Probing Dark Excitons in Monolayer MoS_{2} by Nonlinear Two-Photon Spectroscopy

We report a new dark exciton in monolayer MoS_{2} using second harmonic generation spectroscopy. Hereby, the spectrally dependent second harmonic generation intensity splits into two branches, and an anticrossing is observed at ∼25  meV blue detuned from the bright neutral exciton. These observations are indicative of coherent quantum interference arising from strong two-photon light-matter interaction with an excitonic state that is dark for single photon interaction. The existence of the dark state is supported by engineering its relaxation to bright localized excitons, mediated by vibrational modes of a proximal nanobeam cavity. We show that two-photon light-matter interaction involving dark states has the potential to control relaxation pathways induced by nanostructuring the local environment. Moreover, our results indicate that dark excitons have significant potential for nonlinear quantum devices based on their nontrivial excitonic photophysics.

Stark effect and orbital hybridization of moiré interlayer excitons in the MoSe2/WSe2 heterobilayer

In this paper, we undertake a theoretical investigation into the effects of both in-plane and out-of-plane static electric fields on moiré interlayer excitons (IXs) within a WSe2/MoSe2 heterobilayer. We thoroughly analyze a wide range of properties pertaining to the IXs, including the binding energy, Stark shift, orbital hybridization, photoluminescence (PL) spectra, and radiative lifetime. Various factors influencing IX behavior, such as the dielectric environment, spacing separation, and moiré trap effects, are examined in detail. Our results demonstrate that the in-plane electric field leads to energy splitting between states with non-zero angular momentum, such as the 2p± dark states. Consequently, we analyze IX orbital hybridization, including hybrid Rydberg states like 1s, 2p±, and 2s. In contrast, we show that an out-of-plane electric field induced by a double-gate setup causes a quadratic Stark effect on the center of mass (COM) eigenenergies, leading to energy splitting of degenerate states and resulting in orbital hybridization of COM eigenvectors. Additionally, we demonstrate that a parallel electric field brightens the 2p± dark state through a one-photon PL process, due to the hybridization phenomena between s- and p-type Rydberg states. In short, our investigation is in great agreement with previous research and can assist experimenters in designing novel optoelectronic applications, such as on-chip electro-optic modulators and TeraHertz devices.

Nonlinear Optical Properties of 2D Materials and their Applications

2D materials are a subject of intense research in recent years owing to their exclusive photoelectric properties. With giant nonlinear susceptibility and perfect phase matching, 2D materials have marvelous nonlinear light-matter interactions. The nonlinear optical properties of 2D materials are of great significance to the design and analysis of applied materials and functional devices. Here, the fundamental of nonlinear optics (NLO) for 2D materials is introduced, and the methods for characterizing and measuring second-order and third-order nonlinear susceptibility of 2D materials are reviewed. Furthermore, the theoretical and experimental values of second-order susceptibility χ(2) and third-order susceptibility χ(3) are tabulated. Several applications and possible future research directions of second-harmonic generation (SHG) and third-harmonic generation (THG) for 2D materials are presented.

Strong nonlinear optical processes with extraordinary polarization anisotropy in inversion-symmetry broken two-dimensional PdPSe

Nonlinear optical activities, especially second harmonic generation (SHG), are key phenomena in inversion-symmetry-broken two-dimensional (2D) transition metal dichalcogenides (TMDCs). On the other hand, anisotropic nonlinear optical processes are important for unique applications in nano-nonlinear photonic devices with polarization functions, having become one of focused research topics in the field of nonlinear photonics. However, the strong nonlinearity and strong optical anisotropy do not exist simultaneously in common 2D materials. Here, we demonstrate strong second-order and third-order susceptibilities of 64 pm/V and 6.2×10-19 m2/V2, respectively, in the even-layer PdPSe, which has not been discovered in other common TMDCs (e.g., MoS2). Strikingly, it also simultaneously exhibited strong SHG anisotropy with an anisotropic ratio of ~45, which is the largest reported among all 2D materials to date, to the best of our knowledge. In addition, the SHG anisotropy ratio can be harnessed from 0.12 to 45 (375 times) by varying the excitation wavelength due to the dispersion ofχ ( 2 ) values. As an illustrative example, we further demonstrate polarized SHG imaging for potential applications in crystal orientation identification and polarization-dependent spatial encoding. These findings in 2D PdPSe are promising for nonlinear nanophotonic and optoelectronic applications.

Observation of Anisotropic Second Harmonic Generation in Two-Dimensional Niobium Diselenide

The intrinsic anisotropy of NbSe2 provides a favorable prerequisite of second harmonic generation (SHG) and rich possibilities for tailoring its nonlinear optical (NLO) properties. Here we report the highly efficient SHG of mechanically exfoliated NbSe2 flakes. The nonlinear optical response changes with excitation wavelengths, layer thicknesses, and polarizations of the excitation laser. The anisotropic SHG response further exhibits the intrinsic non-centrosymmetric crystal structure and could effectively assign the crystalline orientation of NbSe2 flakes. Interestingly, although NbSe2 flakes with tens of nanometers thickness experience attenuations in SHG performance, more efficient SHG anisotropy ratios were obtained, which are around 4 times higher than that of the 5-layer counterpart. The determined second-order nonlinearities of NbSe2 flakes (monolayer: ∼1.0 × 103 pm/V; 3-layer: ∼73 pm/V) are comparable to those of the commonly reported two-dimensional materials (e.g., MoS2, WSe2, graphene) with the same number of layers and much higher than those of commercial nonlinear optical crystals.

Optical Second Harmonic Generation of Low-Dimensional Semiconductor Materials

In recent years, the phenomenon of optical second harmonic generation (SHG) has attracted significant attention as a pivotal nonlinear optical effect in research. Notably, in low-dimensional materials (LDMs), SHG detection has become an instrumental tool for elucidating nonlinear optical properties due to their pronounced second-order susceptibility and distinct electronic structure. This review offers an exhaustive overview of the generation process and experimental configurations for SHG in such materials. It underscores the latest advancements in harnessing SHG as a sensitive probe for investigating the nonlinear optical attributes of these materials, with a particular focus on its pivotal role in unveiling electronic structures, bandgap characteristics, and crystal symmetry. By analyzing SHG signals, researchers can glean invaluable insights into the microscopic properties of these materials. Furthermore, this paper delves into the applications of optical SHG in imaging and time-resolved experiments. Finally, future directions and challenges toward the improvement in the NLO in LDMs are discussed to provide an outlook in this rapidly developing field, offering crucial perspectives for the design and optimization of pertinent devices.

Large second-order susceptibility from a quantized indium tin oxide monolayer

Due to their high optical transparency and electrical conductivity, indium tin oxide thin films are a promising material for photonic circuit design and applications. However, their weak optical nonlinearity has been a substantial barrier to nonlinear signal processing applications. In this study, we show that an atomically thin (~1.5 nm) indium tin oxide film in the form of an air/indium tin oxide/SiO2 quantum well exhibits a second-order susceptibility χ2 of ~1,800 pm V-1. First-principles calculations and quantum electrostatic modelling point to an electronic interband transition resonance in the asymmetric potential energy of the quantum well as the reason for this large χ2 value. As the χ2 value is more than 20 times higher than that of the traditional nonlinear LiNbO3 crystal, our indium tin oxide quantum well design can be an important step towards nonlinear photonic circuit applications.

Anisotropic Strain-Tailoring Nonlinear Optical Response in van der Waals NbOI2

Two-dimensional (2D) NbOI2 demonstrates significant second-harmonic generation (SHG) with a high conversion efficiency. To unlock its full potential in practical applications, it is desirable to modulate the SHG behavior while utilizing the intrinsic lattice anisotropy. Here, we demonstrate direction-specific modulation of the SHG response in NbOI2 by applying anisotropic strain with respect to the intrinsic lattice orientations, where more than 2-fold enhancement in the SHG intensity is achieved under strain along the polar axis. The strain-driven SHG evolution is attributed to the strengthened built-in piezoelectric field (polar axis) and the enlarged Peierls distortions (nonpolar axis). Moreover, we provide quantifications of the correlation between strain and SHG intensity in terms of the susceptibility tensor. Our results demonstrate the effective coupling of orientation-specific strain to the anisotropic SHG response through the intrinsic polar order in 2D nonlinear optical crystals, opening a new paradigm toward the development of functional devices.

Third Harmonic Generation in Thin NbOI2 and TaOI2

The niobium oxide dihalides have recently been identified as a new class of van der Waals materials exhibiting exceptionally large second-order nonlinear optical responses and robust in-plane ferroelectricity. In contrast to second-order nonlinear processes, third-order optical nonlinearities can arise irrespective of whether a crystal lattice is centrosymmetric. Here, we report third harmonic generation (THG) in two-dimensional (2D) transition metal oxide iodides, namely NbOI2 and TaOI2. We observe a comparable THG intensity from both materials. By benchmarking against THG from monolayer WS2, we deduce that the third-order susceptibility is approximately on the same order. THG resonances are revealed at different excitation wavelengths, likely due to enhancement by excitonic states and band edge resonances. The THG intensity increases for material thicknesses up to 30 nm, owing to weak interlayer coupling. After this threshold, it shows saturation or a decrease, due to optical interference effects. Our results establish niobium and tantalum oxide iodides as promising 2D materials for third-order nonlinear optics, with intrinsic in-plane ferroelectricity and thickness-tunable nonlinear efficiency.

Enabling Waveguide Optics in Rhombohedral-Stacked Transition Metal Dichalcogenides with Laser-Patterned Grating Couplers

Waveguides play a key role in the implementation of on-chip optical elements and, therefore, lie at the heart of integrated photonics. To add the functionalities of layered materials to existing technologies, dedicated fabrication protocols are required. Here, we build on laser writing to pattern grating structures into bulk noncentrosymmetric transition metal dichalcogenides with grooves as sharp as 250 nm. Using thin flakes of 3R-MoS2 that act as waveguides for near-infrared light, we demonstrate the functionality of the grating couplers with two complementary experiments: first, nano-optical imaging is used to visualize transverse electric and magnetic modes, whose directional outcoupling is captured by finite element simulations. Second, waveguide second-harmonic generation is demonstrated by grating-coupling femtosecond pulses into the slabs in which the radiation partially undergoes frequency doubling throughout the propagation. Our work provides a straightforward strategy for laser patterning of van der Waals crystals, demonstrates the feasibility of compact frequency converters, and examines the tuning knobs that enable optimized coupling into layered waveguides.

Exciton-Sensitized Second-Harmonic Generation in 2D Heterostructures

The efficient optical second-harmonic generation (SHG) of two-dimensional (2D) crystals, coupled with their atomic thickness, which circumvents the phase-match problem, has garnered considerable attention. While various 2D heterostructures have shown promising applications in photodetectors, switching electronics, and photovoltaics, the modulation of nonlinear optical properties in such heterosystems remains unexplored. In this study, we investigate exciton-sensitized SHG in heterobilayers of transition metal dichalcogenides (TMDs), where photoexcitation of one donor layer enhances the SHG response of the other as an acceptor. We utilize polarization-resolved interferometry to detect the SHG intensity and phase of each individual layer, revealing the energetic match between the excitonic resonances of donors and the SHG enhancement of acceptors for four TMD combinations. Our results also uncover the dynamic nature of interlayer coupling, as made evident by the dependence of sensitization on interlayer gap spacing and the average power of the fundamental beam. This work provides insights into how the interlayer coupling of two different layers can modify nonlinear optical phenomena in 2D heterostructures.

Extreme Polarization Anisotropy in Resonant Third-Harmonic Generation from Aligned Carbon Nanotube Films

Carbon nanotubes (CNTs) possess extremely anisotropic electronic, thermal, and optical properties owing to their 1D character. While their linear optical properties have been extensively studied, nonlinear optical processes, such as harmonic generation for frequency conversion, remain largely unexplored in CNTs, particularly in macroscopic CNT assemblies. In this work, macroscopic films of aligned and type-separated (semiconducting and metallic) CNTs are synthesized and polarization-dependent third-harmonic generation (THG) from the films with fundamental wavelengths ranging from 1.5 to 2.5 µm is studied. Both films exhibited strongly wavelength-dependent, intense THG signals, enhanced through exciton resonances, and third-order nonlinear optical susceptibilities of 2.50 × 10-19  m2  V-2 (semiconducting CNTs) and 1.23 × 10-19  m2  V-2 (metallic CNTs), respectively are found, for 1.8 µm excitation. Further, through systematic polarization-dependent THG measurements, the values of all elements of the susceptibility tensor are determined, verifying the macroscopically 1D nature of the films. Finally, polarized THG imaging is performed to demonstrate the nonlinear anisotropy in the large-size CNT film with good alignment. These findings promise applications of aligned CNT films in mid-infrared frequency conversion, nonlinear optical switching, polarized pulsed lasers, polarized long-wave detection, and high-performance anisotropic nonlinear photonic devices.

Strong second-harmonic generation by sublattice polarization in non-uniformly strained monolayer graphene

Despite the potential of graphene for building a variety of quantum photonic devices, its centrosymmetric nature forbids the observation of second harmonic generation (SHG) for developing second-order nonlinear devices. To activate SHG in graphene, extensive research efforts have been directed towards disrupting graphene's inversion symmetry using external stimuli like electric fields. However, these methods fail to engineer graphene's lattice symmetry, which is the root cause of the forbidden SHG. Here, we harness strain engineering to directly manipulate graphene's lattice arrangement and induce sublattice polarization to activate SHG. Surprisingly, the SHG signal is boosted 50-fold at low temperatures, which can be explained by resonant transitions between strain-induced pseudo-Landau levels. The second-order susceptibility of strained graphene is found to be larger than that of hexagonal boron nitride with intrinsic broken inversion symmetry. Our demonstration of strong SHG in strained graphene offers promising possibilities for developing high-efficiency nonlinear devices for integrated quantum circuits.

Two-dimensional semiconducting SnP2Se6 with giant second-harmonic-generation for monolithic on-chip electronic-photonic integration

Two-dimensional (2D) layered semiconductors with nonlinear optical (NLO) properties hold great promise to address the growing demand of multifunction integration in electronic-photonic integrated circuits (EPICs). However, electronic-photonic co-design with 2D NLO semiconductors for on-chip telecommunication is limited by their essential shortcomings in terms of unsatisfactory optoelectronic properties, odd-even layer-dependent NLO activity and low NLO susceptibility in telecom band. Here we report the synthesis of 2D SnP₂Se₆, a van der Waals NLO semiconductor exhibiting strong odd-even layer-independent second harmonic generation (SHG) activity at 1550 nm and pronounced photosensitivity under visible light. The combination of 2D SnP₂Se₆ with a SiN photonic platform enables the chip-level multifunction integration for EPICs. The hybrid device not only features efficient on-chip SHG process for optical modulation, but also allows the telecom-band photodetection relying on the upconversion of wavelength from 1560 to 780 nm. Our finding offers alternative opportunities for the collaborative design of EPICs.

Ferroelectric Domain Control of Nonlinear Light Polarization in MoS2 via PbZr0.2 Ti0.8 O3 Thin Films and Free-Standing Membranes

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) such as MoS₂ exhibit exceptionally strong nonlinear optical responses, while nanoscale control of the amplitude, polar orientation, and phase of the nonlinear light in TMDCs remains challenging. In this work, by interfacing monolayer MoS₂ with epitaxial PbZr_0.2 Ti_0.8 O₃ (PZT) thin films and free-standing PZT membranes, the amplitude and polarization of the second harmonic generation (SHG) signal are modulated via ferroelectric domain patterning, which demonstrates that PZT membranes can lead to in-operando programming of nonlinear light polarization. The interfacial coupling of the MoS₂ polar axis with either the out-of-plane polar domains of PZT or the in-plane polarization of domain walls tailors the SHG light polarization into different patterns with distinct symmetries, which are modeled via nonlinear electromagnetic theory. This study provides a new material platform that enables reconfigurable design of light polarization at the nanoscale, paving the path for developing novel optical information processing, smart light modulators, and integrated photonic circuits.

Evolutionary design of two-dimensional material Fabry-Perot structures for enhanced second harmonic generation

The integration of two-dimensional (2D) materials with resonant photonic structures is seen as a promising direction for enhancing its nonlinear optical response. The design of such heterogeneous resonant structures has often relied on multi-parameter sweeps to determine the optimized dimensions of resonant optical structure that results in good resonance characteristics, often in the absence of the 2D material. Such an approach is computationally intensive and may not necessarily result in efficient generation or collection of nonlinear signals from the designed structure. Here, we report hybrid-genetic optimization (HGA) based design and experimental demonstration of second harmonic generation (SHG) enhancement from Fabry-Perot structures of single and double multilayer gallium selenide (GaSe) flakes with bottom silicon dioxide, and index matched polymethyl methacrylate spacer/encapsulation layers. HGA technique utilized here speeds up the multilayer cavity design by 8.8 and 89-times for the single and double GaSe structures when compared to the full parameter-sweep, with measured SHG enhancement of 128- and 400-times, respectively, when compared to a reference sample composed of GaSe layer of optimized thickness on 300 nm silicon dioxide layer. SHG conversion efficiencies obtained from the HGA structures are 1-2 orders of magnitude higher than previous reports on 2D material integrated resonant metasurfaces or Bragg cavities.

Pulsed Carrier Gas Assisted High-Quality Synthetic 3R-Phase Sword-like MoS2: A Versatile Optoelectronic Material

Synthesizing a material with the desired polymorphic phase in a chemical vapor deposition (CVD) process requires a delicate balance among various thermodynamic variables. Here, we present a methodology to synthesize rhombohedral (3R)-phase MoS₂ in a well-defined sword-like geometry having lengths up to 120 μm, uniform width of 2-3 μm and thickness of 3-7 nm by controlling the carrier gas flow dynamics from continuous mode to pulsed mode during the CVD growth process. Characteristic signatures such as high degree of circular dichroism (∼58% at 100 K), distinct evolution of low-frequency Raman peaks and increasing intensity of second harmonic signals with increasing number of layers conclusively establish the 3R-phase of the material. A high value (∼844 pm/V) of second-order susceptibility for few-layer-thick MoS₂ swords signifies the potential of MoS₂ to serve as an atomically thin nonlinear medium. A field effect mobility of 40 cm²/V-s and I_on/I_off ratio of ∼10⁶ further confirm the electronic-grade standard of this 3R-phase MoS₂. These findings are significant for the development of emerging quantum electronic devices utilizing valley-based physics and nonlinear optical phenomena in layered materials.

Highly nonlinear dipolar exciton-polaritons in bilayer MoS2

Realizing nonlinear optical response in the low photon density limit in solid-state systems has been a long-standing challenge. Semiconductor microcavities in the strong coupling regime hosting exciton-polaritons have emerged as attractive candidates in this context. However, the weak interaction between these quasiparticles has been a hurdle in this quest. Dipolar excitons provide an attractive strategy to overcome this limitation but are often hindered by their weak oscillator strength. The interlayer dipolar excitons in naturally occurring homobilayer MoS₂ alleviates this issue owing to their formation via hybridization of interlayer charge transfer exciton with intralayer B exciton. Here we demonstrate the formation of dipolar exciton polaritons in bilayer MoS₂ resulting in unprecedented nonlinear interaction strengths. A ten-fold increase in nonlinearity is observed for the interlayer dipolar excitons compared to the conventional A excitons. These highly nonlinear dipolar polaritons will likely be a frontrunner in the quest for solid-state quantum nonlinear devices.

Dipolar excitons enable large nonlinear interaction but are usually hampered by their weak oscillator strength. Here, the authors demonstrate the strong light-matter coupling of interlayer dipolar excitons having unusually large oscillator strength in bilayer MoS₂ resulting in highly nonlinear dipolar polaritons.

Tuning nanowire lasers via hybridization with two-dimensional materials

Mixed-dimensional hybrid structures have recently gained increasing attention as promising building blocks for novel electronic and optoelectronic devices. In this context, hybridization of semiconductor nanowires with two-dimensional materials could offer new ways to control and modulate lasing at the nanoscale. In this work, we deterministically fabricate hybrid mixed-dimensional heterostructures composed of ZnO nanowires and MoS₂ monolayers with micrometer control over their relative position. First, we show that our deterministic fabrication method does not degrade the optical properties of the ZnO nanowires. Second, we demonstrate that the lasing wavelength of ZnO nanowires can be tuned by several nanometers by hybridization with CVD-grown MoS₂ monolayers. We assign this spectral shift of the lasing modes to an efficient carrier transfer at the heterointerface and the subsequent increase of the optical band gap in ZnO (Moss-Burstein effect).