Nonlinear co-generation of graphene plasmons for optoelectronic logic operations

Anti-Interference All-Optical Logic Computing Based on a 2D Polarization-Sensitive Photodiode

Optical logic operation is promising for ultrafast information processing and optical computing due to the high computation speed and low power consumption. However, conventional optical logic devices require either a complex structure and circuit design or a constant voltage supply, which impedes the development of high-density integrated circuits. Here, all-optical logic devices are designed using a self-powered polarization-sensitive photodiode of the GeSe homojunction, which is attributed to an anisotropic band structure and built-in electric field. The single photodiode can realize linear logic functions (AND, OR, NAND) and a nonlinear logic gate (XOR) by programming wavelength, power density, and polarization angle. Moreover, complex logic functions (XNOR, Y = IN1, Y = IN2, Y = IN1, and Y = IN2) can be achieved through integrating two photodiodes in parallel. In addition, the neural network algorithm is utilized to validate the feasibility of all-optical logic computing and anti-interference. This work proposes an avenue to design an all-optical reconfigurable logic operation in polarization-sensitive devices.

Switchable Photovoltaic Effect Induced by Light Intensity

Photovoltaic devices capable of reversible photovoltaic polarity through external signal modulation may enable multifunctional optoelectronic systems. However, such devices are limited to those induced by gate voltage, electrical poling, or optical wavelength by using complicated device architectures. Here, we show that the photovoltaic polarity is also switchable with the intensity of incident light. The modulation in light intensity induces photovoltaic polarity switching in geometrically asymmetric MoS2 Schottky photodiodes, explained by the asymmetric lowering of the Schottky barrier heights due to the trapping of photogenerated holes at the MoS2/Cr interface states. An applied gate voltage can further modulate the carrier concentration in the MoS2 channel, providing a method to tune the threshold light intensity of polarity switching. Finally, a bidirectional optoelectronic logic gate with "AND" and "OR" functions was demonstrated within a single device.

Tunable hybridized plasmons-phonons in a graphene/mica-nanofilm heterostructure

Graphene plasmons exhibit significant potential across diverse fields, including optoelectronics, metamaterials, and biosensing. However, the exposure of all surface atoms in graphene makes it susceptible to surrounding interference, including losses stemming from charged impurity scattering, the dielectric environment, and the substrate roughness. Thus, designing a dielectric environment with a long lifetime and tunability is essential. In this study, we created a van der Waals (vdW) heterostructure with graphene nanoribbons and mica nano-films. Through Fourier-transform infrared spectroscopy, we identified hybrid modes resulting from the interaction between graphene plasmons and mica phonons. By doping and manipulating the structure of graphene, we achieved control over the phonon-plasmon ratio, thereby influencing the characteristics of these modes. Phonon-dominated modes exhibited stable resonant frequencies, whereas plasmon-dominated modes demonstrated continuous tuning from 1140 to 1360 cm-1 in resonance frequency, accompanied by an increase in extinction intensity from 0.1% to 1.2%. Multiple phonon couplings limited frequency modulation, yielding stable resonances unaffected by the gate voltage. Mica substrates offer atomic level flatness, long phonon lifetimes, and dielectric functionality, enabling hybrid modes with high confinement, extended lifetimes (up to 1.9 picoseconds), and a broad frequency range (from 750 cm-1 to 1450 cm-1). These properties make our graphene and mica heterostructure promising for applications in chemical sensing and integrated photonic devices.

Broadband and tunable fiber polarizer based on a graphene photonic crystal fiber

The recent flourishing development of two-dimensional (2D) graphene has sparked considerable interest and extensive research on graphene-based optical fiber polarizers. However, studies on graphene-optical fiber polarizers focused on the structure with graphene films attached to side-polished fibers, which face challenges such as low birefringence of 10-6, low polarization extinction ratio (PER), and narrow polarizing window of tens of nanometers. Here, a fiber polarizer based on a graphene-photonic crystal fiber (Gr-PCF) is proposed firstly, which exhibits high birefringence of ∼2.5 × 10-3, high PER of ∼111 dB/mm, broad polarizing window of >400 nm, and tunable polarization states. Graphene or graphene/hBN/graphene (Gr/hBN/Gr) heterojunctions are attached to the surface of two square holes in the PCF to make one of the polarizing modes attenuate significantly. The tunability of the Fermi level (EF) in Gr/hBN/Gr enables the proposed device to function as a polarizer or a polarization-maintaining fiber. The combination of PCF's endless single-mode feature and graphene's broadband optical response feature enables the fiber polarizer to exhibit a wide spectrum range with single-mode transmission characteristics.

Printed On-Chip Perovskite Heterostructure Arrays for Optical Switchable Logic Gates

The use of optoelectronic devices for high-speed and low-power data transmission and computing is considered in the next-generation logic circuits. Heterostructures, which can generate and transmit photoresponse signals dealing with different input lights, are highly desirable for optoelectronic logic gates. Here, the printed on-chip perovskite heterostructures are demonstrated to achieve optical-controlled "AND" and "OR" optoelectronic logic gates. Perovskite heterostructures are printed with a high degree of control over composition, site, and crystallization. Different regions of the printed perovskite heterostructures exhibit distinguishable photoresponse to varied wavelengths of input lights, which can be utilized to achieve optical-controlled logic functions. Correspondingly, parallel operations of the two logic gates ("AND" and "OR") by way of choosing the output electrodes under the single perovskite heterostructure. Benefiting from the uniform crystallization and strict alignment of the printed perovskite heterostructures, the integrated 3 × 3 pixels all exhibit 100% logic operation accuracy. Finally, optical-controlled logic gates responding to multiwavelength light can be printed on the predesigned microelectrodes as the on-chip integrated circuits. This printing strategy allows for integrating heterostructure-based optical and electronic devices from a unit-scale device to a system-scale device.

Ultrafast Opto-Electronic and Thermal Tuning of Third-Harmonic Generation in a Graphene Field Effect Transistor

Graphene is a unique platform for tunable opto-electronic applications thanks to its linear band dispersion, which allows electrical control of resonant light-matter interactions. Tuning the nonlinear optical response of graphene is possible both electrically and in an all-optical fashion, but each approach involves a trade-off between speed and modulation depth. Here, lattice temperature, electron doping, and all-optical tuning of third-harmonic generation are combined in a hexagonal boron nitride-encapsulated graphene opto-electronic device and demonstrate up to 85% modulation depth along with gate-tunable ultrafast dynamics. These results arise from the dynamic changes in the transient electronic temperature combined with Pauli blocking induced by the out-of-equilibrium chemical potential. The work provides a detailed description of the transient nonlinear optical and electronic response of graphene, which is crucial for the design of nanoscale and ultrafast optical modulators, detectors, and frequency converters.

Laser pulse induced second- and third-harmonic generation of gold nanorods with real-time time-dependent density functional tight binding (RT-TDDFTB) method

In this study, we investigate second- and third-harmonic generation processes in Au nanorod systems using the real-time time-dependent density functional tight binding method. Our study focuses on the computation of nonlinear signals based on the time dependent dipole response induced by linearly polarized laser pulses interacting with nanoparticles. We systematically explore the influence of various laser parameters, including pump intensity, duration, frequency, and polarization directions, on harmonic generation. We demonstrate all the results using Au nanorod dimer systems arranged in end-to-end configurations, and disrupting the spatial symmetry of regular single nanorod systems is crucial for second-harmonic generation processes. Furthermore, we study the impact of nanorod lengths, which lead to variable plasmon energies, on harmonic generation, and estimates of polarizabilities and hyper-polarizabilities are provided.

High efficiency graphene-silicon hybrid-integrated thermal and electro-optical modulators

Graphene modulators are considered a potential solution for achieving high-efficiency light modulation, and graphene-silicon hybrid-integrated modulators are particularly favorable due to their CMOS compatibility and low cost. The exploitation of graphene modulator latent capabilities remains an ongoing endeavour to improve the modulation and energy efficiency. Here, high-efficiency graphene-silicon hybrid-integrated thermal and electro-optical modulators are realized using gold-assisted transfer. We fabricate and demonstrate a microscale thermo-optical modulator with a tuning efficiency of 0.037 nm mW-1 and a high heating performance of 67.4 K μm3 mW-1 on a small active area of 7.54 μm2 and a graphene electro-absorption modulator featuring a high speed data rate reaching 56 Gb s-1 and a low power consumption of 200 fJ per bit. These devices show superior performance compared to the state of the art devices in terms of high efficiency, low process complexity, and compact device footage, which can support the realization of high-performance graphene-silicon hybrid-integrated photonic circuits with CMOS compatibility.

A Flexible and Wearable Photodetector Enabling Ultra-Broadband Imaging from Ultraviolet to Millimeter-Wave Regimes

Flexible and miniaturized photodetectors, offering a fast response across the ultraviolet (UV) to millimeter (MM) wave spectrum, are crucial for applications like healthcare monitoring and wearable optoelectronics. Despite their potential, developing such photodetectors faces challenges due to the lack of suitable materials and operational mechanisms. Here, the study proposes a flexible photodetector composed of a monolayer graphene connected by two distinct metal electrodes. Through the photothermoelectric effect, these asymmetric electrodes induce electron flow within the graphene channel upon electromagnetic wave illumination, resulting in a compact device with ultra-broadband and rapid photoresponse. The devices, with footprints ranging from 3 × 20 µm2 to 50 × 20 µm2, operate across a spectrum from 325 nm (UV) to 1.19 mm (MM) wave. They demonstrate a responsivity (RV) of up to 396.4 ± 5.1 mV W-1, a noise-equivalent power (NEP) of 8.6 ± 0.1 nW Hz- 0.5, and a response time as small as 0.8 ± 0.1 ms. This device facilitates direct imaging of shielded objects and material differentiation under simulated human body-wearing conditions. The straightforward device architecture, aligned with its ultra-broadband operational frequency range, is anticipated to hold significant implications for the development of miniaturized, wearable, and portable photodetectors.

Harnessing sub-comb dynamics in a graphene-sensitized microresonator for gas detection

Since their inception, frequency combs generated in microresonators, known as microcombs, have sparked significant scientific interests. Among the various applications leveraging microcombs, soliton microcombs are often preferred due to their inherent mode-locking capability. However, this choice introduces additional system complexity because an initialization process is required. Meanwhile, despite the theoretical understanding of the dynamics of other comb states, their practical potential, particularly in applications like sensing where simplicity is valued, remains largely untapped. Here, we demonstrate controllable generation of sub-combs that bypasses the need for accessing bistable regime. And in a graphene-sensitized microresonator, the sub-comb heterodynes produce stable, accurate microwave signals for high-precision gas detection. By exploring the formation dynamics of sub-combs, we achieved 2 MHz harmonic comb-to-comb beat notes with a signal-to-noise ratio (SNR) greater than 50 dB and phase noise as low as - 82 dBc/Hz at 1 MHz offset. The graphene sensitization on the intracavity probes results in exceptional frequency responsiveness to the adsorption of gas molecules on the graphene of microcavity surface, enabling detect limits down to the parts per billion (ppb) level. This synergy between graphene and sub-comb formation dynamics in a microcavity structure showcases the feasibility of utilizing microcombs in an incoherent state prior to soliton locking. It may mark a significant step toward the development of easy-to-operate, systemically simple, compact, and high-performance photonic sensors.

Ultrafast all-optical second harmonic wavefront shaping

Optical communication can be revolutionized by encoding data into the orbital angular momentum of light beams. However, state-of-the-art approaches for dynamic control of complex optical wavefronts are mainly based on liquid crystal spatial light modulators or miniaturized mirrors, which suffer from intrinsically slow (µs-ms) response times. Here, we experimentally realize a hybrid meta-optical system that enables complex control of the wavefront of light with pulse-duration limited dynamics. Specifically, by combining ultrafast polarization switching in a WSe2 monolayer with a dielectric metasurface, we demonstrate second harmonic beam deflection and structuring of orbital angular momentum on the femtosecond timescale. Our results pave the way to robust encoding of information for free space optical links, while reaching response times compatible with real-world telecom applications.

Coherent control of enhanced second-harmonic generation in a plasmonic nanocircuit using a transition metal dichalcogenide monolayer

Nonlinear nanophotonic circuits, renowned for their compact form and integration capabilities, hold potential for advancing high-capacity optical signal processing. However, limited practicality arises from low nonlinear conversion efficiency. Transition metal dichalcogenides (TMDs) could present a promising avenue to address this challenge, given their superior optical nonlinear characteristics and compatibility with diverse device platforms. Nevertheless, this potential remains largely unexplored, with current endeavors predominantly focusing on the demonstration of TMDs' coherent nonlinear signals via free-space excitation and collection. In this work, we perform direct integration of TMDs onto a plasmonic nanocircuitry. By controlling the polarization angle of the input laser, we show selective routing of second-harmonic generation (SHG) signals from a MoSe2 monolayer within the plasmonic circuit. Routing extinction ratios of 14.86 dB are achieved, demonstrating good coherence preservation in this hybrid nanocircuit. Additionally, our characterization indicates that the integration of TMDs leads to a 13.8-fold SHG enhancement, compared with the pristine nonlinear plasmonic nanocircuitry. These distinct features-efficient SHG generation, coupling, and controllable routing-suggest that our hybrid TMD-plasmonic nanocircuitry could find immediate applications including on-chip optical frequency conversion, selective routing, switching, logic operations, as well as quantum operations.

All-in-one, all-optical logic gates using liquid metal plasmon nonlinearity

Electronic processors are reaching the physical speed ceiling that heralds the era of optical processors. Multifunctional all-optical logic gates (AOLGs) of massively parallel processing are of great importance for large-scale integrated optical processors with speed far in excess of electronics, while are rather challenging due to limited operation bandwidth and multifunctional integration complexity. Here we for the first time experimentally demonstrate a reconfigurable all-in-one broadband AOLG that achieves nine fundamental Boolean logics in a single configuration, enabled by ultrabroadband (400-4000 nm) plasmon-enhanced thermo-optical nonlinearity (TONL) of liquid-metal Galinstan nanodroplet assemblies (GNAs). Due to the unique heterogeneity (broad-range geometry sizes, morphology, assembly profiles), the prepared GNAs exhibit broadband plasmonic opto-thermal effects (hybridization, local heating, energy transfer, etc.), resulting in a huge nonlinear refractive index under the order of 10-4-10-5 within visual-infrared range. Furthermore, a generalized control-signal light route is proposed for the dynamic TONL modulation of reversible spatial-phase shift, based on which nine logic functions are reconfigurable in one single AOLG configuration. Our work will provide a powerful strategy on large-bandwidth all-optical circuits for high-density data processing in the future.

Strained Monolayer MoTe2 as a Photon Absorber in the Telecom Range

To achieve the atomistic control of two-dimensional materials for emerging technological applications, such as valleytronics, spintronics, and single-photon emission, it is of paramount importance to gain an in-depth understanding of their structure-property relationships. In this work, we present a systematic analysis, carried out in the framework of density-functional theory, on the influence of uniaxial strain on the electronic and optical properties of monolayer MoTe2. By spanning a ±10% range of deformation along the armchair and zigzag direction of the two-dimensional sheet, we inspect how the fundamental gap, the dispersion of the bands, the frontier states, and the charge distribution are affected by strain. Under tensile strain, the system remains a semiconductor but a direct-to-indirect band gap transition occurs above 7%. Compressive strain, instead, is highly direction-selective. When it is applied along the armchair edge, the material remains a semiconductor, while along the zigzag direction a semiconductor-to-metal transition happens above 8%. The characteristics of the fundamental gap and wave function distribution are also largely dependent on the strain direction, as demonstrated by a thorough analysis of the band structure and of the charge density. Additional ab initio calculations based on many-body perturbation theory confirm the ability of strained MoTe2 to absorb radiation in the telecom range, thus suggesting the application of this material as a photon absorber upon suitable strain modulation.

Nonlinear All-Optical Coherent Generation and Read-Out of Valleys in Atomically Thin Semiconductors

With conventional electronics reaching performance and size boundaries, all-optical processes have emerged as ideal building blocks for high speed and low power consumption devices. A promising approach in this direction is provided by valleytronics in atomically thin semiconductors, where light-matter interaction allows to write, store, and read binary information into the two energetically degenerate but non-equivalent valleys. Here, nonlinear valleytronics in monolayer WSe2 is investigated and show that an individual ultrashort pulse with a photon energy tuned to half of the optical band-gap can be used to simultaneously excite (by coherent optical Stark shift) and detect (by a rotation in the polarization of the emitted second harmonic) the valley population.

Decoration of Poly-3-methyl Aniline with As(III) Oxide and Hydroxide as an Effective Photoelectrode for Electroanalytical Photon Sensing with Photodiode-like Behavior

This study achieved the decoration of poly-3-methyl aniline (P3MA) with As2O3-As(OH)3 using K2S2O8 and NaAsO2 on the 3-methyl aniline monomer. This resulted in a highly porous nanocomposite polymer composite with wide absorption optical behavior, an average crystalline size of 22 nm, and a 1.73 eV bandgap. The photoelectrode exhibited a great electrical response for electroanalytical applications, such as photon sensing and photodiodes, with a Jph of 0.015 mA/cm2 and Jo of 0.004 mA/cm2. The variable Jph values ranged from 0.015 to 0.010 mA/cm2 under various monochromatic filters from 340 to 730 nm, which demonstrates high sensitivity to wavelengths. Effective photon numbers were calculated to be 8.0 × 1021 and 5.6 × 1021 photons/s for these wavelength values, and the photoresponsivity (R) values were 0.16 and 0.10 mA/W, respectively. These high sensitivities make the nanocomposite material a promising candidate for use in photodetectors and photodiodes, with potential for commercial applications in highly technological systems and devices. Additionally, the material opens up possibilities for the development of photodiodes using n- and p-type materials.

Directional and Eye-Tracking Light Field Display with Efficient Rendering and Illumination

Current efforts with light field displays are mainly concentrated on the widest possible viewing angle, while a single viewer only needs to view the display in a specific viewing direction. To make the light field display a practical practice, a super multi-view light field display is proposed to compress the information in the viewing zone of a single user by reducing the redundant viewpoints. A quasi-directional backlight is proposed, and a lenticular lens array is applied to achieve the restricted viewing zone. The eye-tracking technique is applied to extend the viewing area. Experimental results show that the proposed scheme can present a vivid 3D scene with smooth motion parallax. Only 16.7% conventional light field display data are required to achieve 3D display. Furthermore, an illumination power of 3.5 watt is sufficient to lighten a 31.5-inch light field display, which takes up 1.5% of the illumination power required for planar display of similar configuration.

Low-loss skimming waveguides with controllable mode leakage for on-chip saturable absorbers

Emerging 3D photonic circuits would greatly benefit from the ability to integrate skimming waveguides with low loss and controllable inscription depth into photonic circuits. These waveguides allow for the interaction of guiding light directly with external modulation signals and enable programmable photonic circuits. Here, we report the fabrication of a novel photonic-lattice-like skimming waveguide (PLLSW) using femtosecond laser writing. Our method enables fine control of cross-sectional symmetry and writing depth of waveguides, achieving a minimum depth of 1 μm and a low insertion loss of 1 dB. Based on the PLLSW, we demonstrate on-chip light modulation by designing an evanescent-field-type saturable absorber through the coupling of a carbon nanotube film with the PLLSW, which exhibits saturation intensity from 20 to 200 MW/cm2 through the balanced twin-detector measurement. The strong nonlinear optical response of the PLLSW-based saturable absorber is further exploited to drive a Q-switched pulse laser at 1550 nm based on a fiber laser cavity. Our work demonstrates an effective method to integrate nonlinear optical materials into a glass chip for all-optical switching based on 3D waveguides, which holds great potential for the construction of large-scale programmable photonic circuits in the future.

Ultra-wideband integrated photonic devices on silicon platform: from visible to mid-IR

Silicon photonics has gained great success mainly due to the promise of realizing compact devices in high volume through the low-cost foundry model. It is burgeoning from laboratory research into commercial production endeavors such as datacom and telecom. However, it is unsuitable for some emerging applications which require coverage across the visible or mid infrared (mid-IR) wavelength bands. It is desirable to introduce other wideband materials through heterogeneous integration, while keeping the integration compatible with wafer-scale fabrication processes on silicon substrates. We discuss the properties of silicon-family materials including silicon, silicon nitride, and silica, and other non-group IV materials such as metal oxide, tantalum pentoxide, lithium niobate, aluminum nitride, gallium nitride, barium titanate, piezoelectric lead zirconate titanate, and 2D materials. Typical examples of devices using these materials on silicon platform are provided. We then introduce a general fabrication method and low-loss process treatment for photonic devices on the silicon platform. From an applications viewpoint, we focus on three new areas requiring integration: sensing, optical comb generation, and quantum information processing. Finally, we conclude with perspectives on how new materials and integration methods can address previously unattainable wavelength bands while maintaining the advantages of silicon, thus showing great potential for future widespread applications.

Ultrafast terahertz transparency boosting in graphene meta-cavities

As an exceptional nonlinear material, graphene offers versatile appealing properties, such as electro-optic tunability and high electromagnetic field confinement in the terahertz regime, spurring advance in ultrashort pulse formation, photodetectors and plasmonic emission. However, limited by atomic thickness, weak light-matter interaction still limits the development of integrated optical devices based on graphene. Here, an exquisitely designed meta-cavities combined with patterned graphene is used to overcome this challenge and promote THz-graphene interaction via terahertz location oscillation. By using an 800 nm pump laser, the local field-induced strong interaction allows sensitive responses to the ultrafast energy transfer from the ultrafast optical pump to graphene electron heat, enabling 46.2% enhancement of terahertz transparency. Such optical modulation of terahertz waves shows ultrafast response in delay less than 10 ps. Moreover, thanks to the nature of graphene, the device shows unique potential for electrically dynamic tuning and further bandwidth broadening.

A Monolithic Graphene-Functionalized Microlaser for Multispecies Gas Detection

Optical-microcavity-enhanced light-matter interaction offers a powerful tool to develop fast and precise sensing techniques, spurring applications in the detection of biochemical targets ranging from cells, nanoparticles, and large molecules. However, the intrinsic inertness of such pristine microresonators limits their spread in new fields such as gas detection. Here, a functionalized microlaser sensor is realized by depositing graphene in an erbium-doped over-modal microsphere. By using a 980 nm pump, multiple laser lines excited in different mode families of the microresonator are co-generated in a single device. The interference between these splitting mode lasers produce beat notes in the electrical domain (0.2-1.1 MHz) with sub-kHz accuracy, thanks to the graphene-induced intracavity backward scattering. This allows for lab-free multispecies gas identification from a mixture, and ultrasensitive gas detection down to individual molecule.

Detection band expansion by independently tunable double resonances in a long-wavelength dual-color QWIP

Multi-resonance light coupling management is a promising way to expand the operating spectral ranges of optoelectronic devices. The classical strategies are either lack of independent tunability for each resonance or involved with complex fabrication. Here, we propose a new scheme for expanding the operating spectral range of an optoelectronic device through a dual-color active material integrated with a simple resonant waveguide structure. The TM waveguide mode and the SPP mode of the resonant waveguide structure are regulated to match the two active regions of the dual-color material both spectrally and spatially. Applying this scheme to a long-wavelength infrared quantum well photodetector, the absorption efficiencies at the two peak detection wavelengths of the dual-color quantum wells are both enhanced by more than 10 times compared with the case of a standard 45° edge facet coupled device with the same detection material. The simple light coupling structure is easy to accomplish and compatible with focal plane arrays. For thermal radiation detection, the absorption efficiency of the 300 K blackbody radiation by our dual-color detector is 83.8% higher than that by a single-color detector with the optimized structural parameters. Moreover, either polarization sensitive or polarization insensitive detection could be achieved in this dual-color infrared quantum well photodetector by using anisotropic or isotropic gratings.

Ultra-narrow linewidth vertical-cavity surface-emitting laser based on external-cavity weak distributed feedback

We demonstrate an ultra-narrow linewidth vertical-cavity surface-emitting laser (VCSEL) based on external-cavity weak distributed feedback from Rayleigh backscattering (RBS). A single longitudinal mode VCSEL with the linewidth as narrow as 435 Hz and a contrast of 55 dB are experimentally achieved by RBS fiber with a feedback level of RBS signal of -27.6 dB. By adjusting the thermal resistance of the VCSEL from 4.5 kΩ to 7.0 kΩ, the laser wavelength can be tuned from 1543.324 nm to 1542.06 nm with a linear tuning slope of -0.506 nm/kΩ. In the tuning process, the linewidth fluctuates in the range of 553-419 Hz.

Development of a Highly Efficient Optoelectronic Device Based on CuFeO2/CuO/Cu Composite Nanomaterials

Herein, an optoelectronic device synthesized from a CuFeO₂/CuO/Cu nanocomposite was obtained through the direct combustion of Cu foil coated with Fe₂O₃ nanomaterials. The chemical, morphological, and optical properties of the nanocomposite were examined via different techniques, such as XRD, XPS, TEM, SEM, and UV/Vis spectrophotometer. The optical reflectance demonstrated a great enhancement in the CuFeO₂ optical properties compared to CuO nanomaterials. Such enhancements were clearly distinguished through the bandgap values, which varied between 1.35 and 1.38 eV, respectively. The XRD and XPS analyses confirmed the chemical structure of the prepared materials. The produced current density (J_ph) was studied in dark and light conditions, thereby confirming the obtained optoelectronic properties. The J_ph dependency to monochromatic wavelength was also investigated. The J_ph value was equal to 0.033 mA·cm^-2 at 390 nm, which decreased to 0.031 mA·cm^-2 at 508 nm, and then increased to 0.0315 mA·cm^-2 at 636 nm. The light intensity effects were similarly inspected. The J_ph values rose when the light intensities were augmented from 25 to 100 mW·cm^-2 to reach 0.031 and 0.05 mA·cm^-2, respectively. The photoresponsivity (R) and detectivity (D) values were found at 0.33 mA·W^-1 and 7.36 × 10¹⁰ Jones at 390 nm. The produced values confirm the high light sensitivity of the prepared optoelectronic device in a broad optical region covering UV, Vis, and near IR, with high efficiency. Further works are currently being designed to develop a prototype of such an optoelectronic device so that it can be applied in industry.