1
|
He L, Lang S, Zhang W, Song S, Lyu J, Gong J. First-Principles Prediction of High and Low Resistance States in Ta/h-BN/Ta Atomristor. Nanomaterials (Basel) 2024; 14:612. [PMID: 38607146 PMCID: PMC11013407 DOI: 10.3390/nano14070612] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/13/2024] [Revised: 03/13/2024] [Accepted: 03/20/2024] [Indexed: 04/13/2024]
Abstract
Two-dimensional (2D) materials have received significant attention for their potential use in next-generation electronics, particularly in nonvolatile memory and neuromorphic computing. This is due to their simple metal-insulator-metal (MIM) sandwiched structure, excellent switching performance, high-density capability, and low power consumption. In this work, using comprehensive material simulations and device modeling, the thinnest monolayer hexagonal boron nitride (h-BN) atomristor is studied by using a MIM configuration with Ta electrodes. Our first-principles calculations predicted both a high resistance state (HRS) and a low resistance state (LRS) in this device. We observed that the presence of van der Waals (vdW) gaps between the Ta electrodes and monolayer h-BN with a boron vacancy (VB) contributes to the HRS. The combination of metal electrode contact and the adsorption of Ta atoms onto a single VB defect (TaB) can alter the interface barrier between the electrode and dielectric layer, as well as create band gap states within the band gap of monolayer h-BN. These band gap states can shorten the effective tunneling path for electron transport from the left electrode to the right electrode, resulting in an increase in the current transmission coefficient of the LRS. This resistive switching mechanism in monolayer h-BN atomristors can serve as a theoretical reference for device design and optimization, making them promising for the development of atomristor technology with ultra-high integration density and ultra-low power consumption.
Collapse
Affiliation(s)
- Lan He
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
| | - Shuai Lang
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
| | - Wei Zhang
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
| | - Shun Song
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Juan Lyu
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
| | - Jian Gong
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
| |
Collapse
|
2
|
Wang S, Liu X, Yu H, Liu X, Zhao J, Hou L, Gao Y, Chen Z. Transfer-Free Analog and Digital Flexible Memristors Based on Boron Nitride Films. Nanomaterials (Basel) 2024; 14:327. [PMID: 38392700 PMCID: PMC10893057 DOI: 10.3390/nano14040327] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/05/2024] [Revised: 02/03/2024] [Accepted: 02/05/2024] [Indexed: 02/24/2024]
Abstract
The traditional von Neumann architecture of computers, constrained by the inherent separation of processing and memory units, faces challenges, for instance, memory wall issue. Neuromorphic computing and in-memory computing offer promising paradigms to overcome the limitations of additional data movement and to enhance computational efficiency. In this work, transfer-free flexible memristors based on hexagonal boron nitride films were proposed for analog neuromorphic and digital memcomputing. Analog memristors were prepared; they exhibited synaptic behaviors, including paired-pulse facilitation and long-term potentiation/depression. The resistive switching mechanism of the analog memristors were investigated through transmission electron microscopy. Digital memristors were prepared by altering the electrode materials, and they exhibited reliable device performance, including a large on/off ratio (up to 106), reproducible switching endurance (>100 cycles), non-volatile characteristic (>60 min), and effective operating under bending conditions (>100 times).
Collapse
Affiliation(s)
- Sibo Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Xiuhuan Liu
- College of Communication Engineering, Jilin University, Changchun 130012, China
| | - Han Yu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Xiaohang Liu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Jihong Zhao
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Lixin Hou
- College of Information Technology, Jilin Agricultural University, Changchun 130118, China
| | - Yanjun Gao
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Zhanguo Chen
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| |
Collapse
|
3
|
Lee D, Kim HD. Effect of Hydrogen Annealing on Performances of BN-Based RRAM. Nanomaterials (Basel) 2023; 13:nano13101665. [PMID: 37242080 DOI: 10.3390/nano13101665] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2023] [Revised: 05/12/2023] [Accepted: 05/16/2023] [Indexed: 05/28/2023]
Abstract
BN-based resistive random-access memory (RRAM) has emerged as a potential candidate for non-volatile memory (NVM) in aerospace applications, offering high thermal conductivity, excellent mechanical, and chemical stability, low power consumption, high density, and reliability. However, the presence of defects and trap states in BN-based RRAM can limit its performance and reliability in aerospace applications. As a result, higher set voltages of 1.4 and 1.23 V were obtained for non-annealed and nitrogen-annealed BN-based RRAM, respectively, but lower set voltages of 1.06 V were obtained for hydrogen-annealed BN-based RRAM. In addition, the hydrogen-annealed BN-based RRAM showed an on/off ratio of 100, which is 10 times higher than the non-annealed BN-based RRAM. We observed that the LRS changed to the HRS state before 10,000 s for both the non-annealed and nitrogen-annealed BN-based RRAMs. In contrast, the hydrogen-annealed BN-based RRAM showed excellent retention characteristics, with data retained up to 10,000 s.
Collapse
Affiliation(s)
- Doowon Lee
- Department of Semiconductor Systems Engineering, and Convergence Engineering for Intelligent Drone, Institute of Semiconductor and System IC, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea
| | - Hee-Dong Kim
- Department of Semiconductor Systems Engineering, and Convergence Engineering for Intelligent Drone, Institute of Semiconductor and System IC, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea
| |
Collapse
|
4
|
Sattari-Esfahlan S, Kim HG, Hyun SH, Choi JH, Hwang HS, Kim ET, Park HG, Lee JH. Low-Temperature Direct Growth of Amorphous Boron Nitride Films for High-Performance Nanoelectronic Device Applications. ACS Appl Mater Interfaces 2023; 15:7274-7281. [PMID: 36719071 PMCID: PMC9923684 DOI: 10.1021/acsami.2c18706] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/18/2022] [Accepted: 01/12/2023] [Indexed: 06/18/2023]
Abstract
We successfully demonstrated the improvement and stabilization of the electrical properties of a graphene field effect transistor by fabricating a sandwiched amorphous boron nitride (a-BN)/graphene (Gr)/a-BN using a directly grown a-BN film. The a-BN film was grown via low-pressure chemical vapor deposition (LPCVD) at a low growth temperature of 250 °C and applied as a protection layer in the sandwiched structure. Both structural and chemical states of the as-grown a-BN were verified by various spectroscopic and microscopic analyses. We analyzed the Raman spectra of Gr/SiO2 and a-BN/Gr/a-BN structures to determine the stability of the device under exposure to ambient air. Following exposure, the intensity of the 2D/G-peak ratio of Gr/SiO2 decreased and the position of the G and 2D peaks red-shifted due to the degradation of graphene. In contrast, the peak position of encapsulated graphene is almost unchanged. We also confirmed that the mobility of a-BN/Gr/a-BN structure is 17,941 cm2/Vs. This synthetic strategy could provide a facile way to synthesize uniform a-BN film for encapsulating various van der Waals materials, which is beneficial for future applications in nanoelectronics.
Collapse
Affiliation(s)
- Seyed
Mehdi Sattari-Esfahlan
- Department
of Material Science and Engineering, Ajou
University, Suwon16499, Korea
- Department
of Materials Science and Engineering, Seoul
National University, Seoul08826, Korea
- Institute
for Microelectronics, TU Wien, Vienna1040, Austria
| | - Hyoung Gyun Kim
- Department
of Materials Science and Engineering, Seoul
National University, Seoul08826, Korea
| | - Sang Hwa Hyun
- Department
of Material Science and Engineering, Ajou
University, Suwon16499, Korea
- Department
of Energy Systems Research, Ajou University, Suwon16499, Korea
| | - Jun-Hui Choi
- Department
of Material Science and Engineering, Ajou
University, Suwon16499, Korea
- Department
of Energy Systems Research, Ajou University, Suwon16499, Korea
| | - Hyun Sik Hwang
- Department
of Material Science and Engineering, Ajou
University, Suwon16499, Korea
- Department
of Energy Systems Research, Ajou University, Suwon16499, Korea
| | - Eui-Tae Kim
- Department
of Materials Science and Engineering, Chungnam
National University, Daejeon34134, Korea
| | - Hyeong Gi Park
- AI-Superconvergence
KIURI Translational Research Center, Ajou
University School of Medicine, Suwon16499, Korea
| | - Jae-Hyun Lee
- Department
of Material Science and Engineering, Ajou
University, Suwon16499, Korea
- Department
of Energy Systems Research, Ajou University, Suwon16499, Korea
| |
Collapse
|
5
|
Moon S, Kim J, Park J, Im S, Kim J, Hwang I, Kim JK. Hexagonal Boron Nitride for Next-Generation Photonics and Electronics. Adv Mater 2023; 35:e2204161. [PMID: 35735090 DOI: 10.1002/adma.202204161] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/09/2022] [Revised: 06/14/2022] [Indexed: 06/15/2023]
Abstract
Hexagonal boron nitride (h-BN), an insulating 2D layered material, has recently attracted tremendous interest motivated by the extraordinary properties it shows across the fields of optoelectronics, quantum optics, and electronics, being exotic material platforms for various applications. At an early stage of h-BN research, it is explored as an ideal substrate and insulating layers for other 2D materials due to its atomically flat surface that is free of dangling bonds and charged impurities, and its high thermal conductivity. Recent discoveries of structural and optical properties of h-BN have expanded potential applications into emerging electronics and photonics fields. h-BN shows a very efficient deep-ultraviolet band-edge emission despite its indirect-bandgap nature, as well as stable room-temperature single-photon emission over a wide wavelength range, showing a great potential for next-generation photonics. In addition, h-BN is extensively being adopted as active media for low-energy electronics, including nonvolatile resistive switching memory, radio-frequency devices, and low-dielectric-constant materials for next-generation electronics.
Collapse
Affiliation(s)
- Seokho Moon
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Jiye Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Jeonghyeon Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Semi Im
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Jawon Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Inyong Hwang
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Jong Kyu Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| |
Collapse
|
6
|
Mao JY, Wu S, Ding G, Wang ZP, Qian FS, Yang JQ, Zhou Y, Han ST. A van der Waals Integrated Damage-Free Memristor Based on Layered 2D Hexagonal Boron Nitride. Small 2022; 18:e2106253. [PMID: 35083839 DOI: 10.1002/smll.202106253] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2021] [Revised: 12/20/2021] [Indexed: 06/14/2023]
Abstract
2D materials with intriguing properties have been widely used in optoelectronics. However, electronic devices suffered from structural damage due to the ultrathin materials and uncontrolled defects at interfaces upon metallization, which hindered the development of reliable devices. Here, a damage-free Au/h-BN/Au memristor is reported using a clean, water-assisted metal transfer approach by physically assembling Au electrodes onto the layered h-BN which minimized the structural damage and undesired interfacial defects. The memristors demonstrate significantly improved performance with the coexistence of nonpolar and threshold switching as well as tunable current levels by controlling the compliance current, compared with devices with evaporated contacts. The devices integrated into an array show suppressed sneak path current and can work as both logic gates and latches to implement logic operations allowing in-memory computing. Cross-sectional scanning transmission electron microscopy analysis validates the feasibility of this nondestructive metal integration approach, the crucial role of high-quality atomically sharp interface in resistive switching, and a direct observation of percolation path. The underlying mechanism of boron vacancies-assisted transport is further supported experimentally by conductive atomic force microscopy free from process-induced damage, and theoretically by ab initio simulations.
Collapse
Affiliation(s)
- Jing-Yu Mao
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Shuang Wu
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Guanglong Ding
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Zhan-Peng Wang
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Fang-Sheng Qian
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Jia-Qin Yang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| |
Collapse
|
7
|
Wang Y, Huang Z, Chen X, Lu M. Building resistive switching memory having super-steep switching slope with in-plane boron nitride. Nanotechnology 2021; 33:125202. [PMID: 34902845 DOI: 10.1088/1361-6528/ac4289] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/27/2021] [Accepted: 12/13/2021] [Indexed: 06/14/2023]
Abstract
The two-dimensional hexagonal boron nitride (h-BN) has been used as resistive switching (RS) material for memory due to its insulation, good thermal conductivity and excellent thermal/chemical stability. A typical h-BN based RS memory employs a metal-insulator-metal vertical structure, in which metal ions pass through the h-BN layers to realize the transition from high resistance state to low resistance state. Alternatively, just like the horizontal structure widely used in the traditional MOS capacitor based memory, the performance of in-plane h-BN memory should also be evaluated to determine its potential applications. As consequence, a horizontal structured resistive memory has been designed in this work by forming freestanding h-BN across Ag nanogap, where the two-dimensional h-BN favored in-plane transport of metal ions to emphasize the RS behavior. As a result, the memory devices showed switching slope down to 0.25 mV dec-1, ON/OFF ratio up to 108, SET current down to pA and SET voltage down to 180 mV.
Collapse
Affiliation(s)
- Yisen Wang
- Pen-Tung Sah Research Institute of Micro-Nano Science & Technology, Xiamen University, Xiamen 361005, People's Republic of China
| | - Zhifang Huang
- Pen-Tung Sah Research Institute of Micro-Nano Science & Technology, Xiamen University, Xiamen 361005, People's Republic of China
| | - Xinyi Chen
- Pen-Tung Sah Research Institute of Micro-Nano Science & Technology, Xiamen University, Xiamen 361005, People's Republic of China
| | - Miao Lu
- Pen-Tung Sah Research Institute of Micro-Nano Science & Technology, Xiamen University, Xiamen 361005, People's Republic of China
| |
Collapse
|
8
|
Karbalaei Akbari M, Zhuiykov S. Dynamic Self-Rectifying Liquid Metal-Semiconductor Heterointerfaces: A Platform for Development of Bioinspired Afferent Systems. ACS Appl Mater Interfaces 2021; 13:60636-60647. [PMID: 34878244 DOI: 10.1021/acsami.1c17584] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The assembly of geometrically complex and dynamically active liquid metal/semiconductor heterointerfaces has drawn extensive attention in multidimensional electronic systems. In this study the chemovoltaic driven reactions have enabled the microfluidity of hydrophobic galinstan into a three-dimensional (3D) semiconductor matrix. A dynamic heterointerface is developed between the atomically thin surface oxide of galinstan and the TiO2-Ni interface. Upon the growth of Ga2O3 film at the Ga2O3-TiO2 heterointerface, the partial reduction of the TiO2 film was confirmed by material characterization techniques. The conductance imaging spectroscopy and electrical measurements are used to investigate the charge transfer at heterointerfaces. Concurrently, the dynamic conductance in artificial synaptic junctions is modulated to mimic the biofunctional communication characteristics of multipolar neurons, including slow and fast inhibitory and excitatory postsynaptic responses. The self-rectifying characteristics, femtojoule energy processing, tunable synaptic events, and notably the coordinated signal recognition are the main characteristics of this multisynaptic device. This novel 3D design of liquid metal-semiconductor structure opens up new opportunities for the development of bioinspired afferent systems. It further facilitates the realization of physical phenomena at liquid metal-semiconductor heterointerfaces.
Collapse
Affiliation(s)
- Mohammad Karbalaei Akbari
- Department of Solid State Sciences, Faculty of Science, Ghent University, 9000 Ghent, Belgium
- Centre for Environmental & Energy Research, Faculty of Bioscience Engineering, Ghent University Global Campus, Incheon 21985, South Korea
| | - Serge Zhuiykov
- Department of Solid State Sciences, Faculty of Science, Ghent University, 9000 Ghent, Belgium
- Centre for Environmental & Energy Research, Faculty of Bioscience Engineering, Ghent University Global Campus, Incheon 21985, South Korea
| |
Collapse
|
9
|
Dai Y, Yang B, Li X, Shao P, Wang X, Wang F, Ding C, Yang F. First-principles study of bipolar resistive memories based on monolayer α-GeTe. Nanotechnology 2021; 32:475701. [PMID: 34384054 DOI: 10.1088/1361-6528/ac1d04] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/06/2021] [Accepted: 08/11/2021] [Indexed: 06/13/2023]
Abstract
In this work, the electrical properties of monolayerα-GeTe (MLα-GeTe) based on first-principles were studied, in which armchairα-GeTe shows an ohmic current-voltage relationship and zigzagα-GeTe shows an obvious nonlinear current. The potential distribution and band structure explain the mechanism for the anisotropy and nonlinearity. Then, based on calculation of the binding energy and Mulliken population, eight interface structures between graphene (GR) and MLα-GeTe were constructed, in which GC3 and TC3 were found to be relatively stable. Next, GR/MLα-GeTe/GR was established based on the two interfaces (GC3 and TC3). The current-voltage (IV) characteristics were calculated to show that the device has bipolar resistance characteristics, suitable set and reset voltages and a high window value (104). Further analysis of electron density inferred that the resistance mechanism was based on the drift of Te vacancies forming conductive filaments. And the performance of GR/MLα-GeTe/GR was found to be improved by the creation of Te vacancies. This work indicates that GR/MLα-GeTe/GR has the potential to be used to build resistive random access memory (RRAM) with good performance and may be instructive and valuable for the manufacture and application of RRAM.
Collapse
Affiliation(s)
- Yuehua Dai
- School of Electronics and Information Engineering, Anhui University, Hefei 230000, People's Republic of China
| | - Bin Yang
- School of Electronics and Information Engineering, Anhui University, Hefei 230000, People's Republic of China
| | - Xing Li
- School of Electronics and Information Engineering, Anhui University, Hefei 230000, People's Republic of China
| | - Peng Shao
- School of Electronics and Information Engineering, Anhui University, Hefei 230000, People's Republic of China
| | - Xiaoqing Wang
- School of Electronics and Information Engineering, Anhui University, Hefei 230000, People's Republic of China
| | - Feifei Wang
- School of Electronics and Information Engineering, Anhui University, Hefei 230000, People's Republic of China
| | - Cheng Ding
- School of Electronics and Information Engineering, Anhui University, Hefei 230000, People's Republic of China
| | - Fei Yang
- School of Electronics and Information Engineering, Anhui University, Hefei 230000, People's Republic of China
| |
Collapse
|
10
|
Jeon YR, Choi J, Kwon JD, Park MH, Kim Y, Choi C. Suppressed Stochastic Switching Behavior and Improved Synaptic Functions in an Atomic Switch Embedded with a 2D NbSe 2 Material. ACS Appl Mater Interfaces 2021; 13:10161-10170. [PMID: 33591167 DOI: 10.1021/acsami.0c18784] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We investigated chemical vapor-deposited (CVD) two-dimensional (2D) niobium diselenide (NbSe2) material for the resistive switching and synaptic characteristics. Three different atomic switch devices with Ag/HfO2/Pt, Ag/Ti/HfO2/Pt, and Ag/NbSe2/HfO2/Pt were studied as both memory and neuromorphic devices. Both the inserted Ti and NbSe2 buffer layers effectively control the stochastic Ag-ion diffusion, leading to suppressed variation of switching characteristics, which is a critical issue in an atomic switch device. Especially, the device with the 2D NbSe2 buffer layer strikingly enhanced the device reliability in both endurance and retention. In conjunction with scanning transmission electron microscopy (STEM) and energy-dispersive spectrometry (EDS) analysis of the control of the Ag-ion migration, it was understood that filament connection is interrelated with the SET and RESET processes. Besides resistive behaviors in the memory device, various synapse functions such as spike-rate-dependent plasticity (SRDP), forgetting curve, potentiation, and depression were demonstrated with an atomic switch with the 2D NbSe2 buffer layer. Furthermore, the emulated long-term synaptic property was simulated using the MNIST 28 × 28 pixel database. Using adopting a CVD 2D NbSe2 blocking layer, the stochastic Ag-ion diffusion behavior is well-controlled and therefore stable switching and synapse functions are attained.
Collapse
Affiliation(s)
- Yu-Rim Jeon
- Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Jungmin Choi
- Materials Center for Energy Convergence, Korea Institute of Materials Science, Changwon 51508, Republic of Korea
| | - Jung-Dae Kwon
- Materials Center for Energy Convergence, Korea Institute of Materials Science, Changwon 51508, Republic of Korea
| | - Min Hyuk Park
- School of Materials Science and Engineering, Pusan National University, Pusan 46241, Republic of Korea
| | - Yonghun Kim
- Materials Center for Energy Convergence, Korea Institute of Materials Science, Changwon 51508, Republic of Korea
| | - Changhwan Choi
- Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Republic of Korea
| |
Collapse
|
11
|
Sun Y, Li L, Shi K. Analog and Digital Bipolar Resistive Switching in Co-Al-Layered Double Hydroxide Memristor. Nanomaterials (Basel) 2020; 10:E2095. [PMID: 33105722 PMCID: PMC7690433 DOI: 10.3390/nano10112095] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/06/2020] [Revised: 10/19/2020] [Accepted: 10/20/2020] [Indexed: 01/29/2023]
Abstract
We demonstrate a nonvolatile memristor based on Co-Al-layered double hydroxide (Co-Al LDH). We also introduce a memristor that has a hexazinone-adsorbing Co-Al LDH composite active layer. Memristor characteristics could be modulated by adsorbing hexazinone with Co-Al LDHs in the active layer. While different, Co-Al LDH-based memory devices show gradual current changes, and the memory device with small molecules of adsorbed hexazinone undergo abrupt changes. Both devices demonstrate programmable memory peculiarities. In particular, both memristors show rewritable resistive switching with electrical bistability (>105 s). This research manifests the promising potential of 2D nanocomposite materials for adsorbing electroactive small molecules and rectifying resistive switching properties for memristors, paving a way for design of promising 2D nanocomposite memristors for advanced device applications.
Collapse
Affiliation(s)
- Yanmei Sun
- Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, School of Chemistry and Material Science, Heilongjiang University, Harbin 150080, China;
- Key Laboratory of Chemical Engineering Process & Technology for High-efficiency Conversion, School of Chemistry and Material Science, Heilongjiang University, Harbin 150080, China
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
| | - Li Li
- Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, School of Chemistry and Material Science, Heilongjiang University, Harbin 150080, China;
- Key Laboratory of Chemical Engineering Process & Technology for High-efficiency Conversion, School of Chemistry and Material Science, Heilongjiang University, Harbin 150080, China
| | - Keying Shi
- Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, School of Chemistry and Material Science, Heilongjiang University, Harbin 150080, China;
| |
Collapse
|
12
|
Sun L, Zhang Y, Han G, Hwang G, Jiang J, Joo B, Watanabe K, Taniguchi T, Kim YM, Yu WJ, Kong BS, Zhao R, Yang H. Self-selective van der Waals heterostructures for large scale memory array. Nat Commun 2019; 10:3161. [PMID: 31320651 DOI: 10.1038/s41467-019-11187-9] [Citation(s) in RCA: 43] [Impact Index Per Article: 8.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/22/2019] [Accepted: 06/19/2019] [Indexed: 12/03/2022] Open
Abstract
The large-scale crossbar array is a promising architecture for hardware-amenable energy efficient three-dimensional memory and neuromorphic computing systems. While accessing a memory cell with negligible sneak currents remains a fundamental issue in the crossbar array architecture, up-to-date memory cells for large-scale crossbar arrays suffer from process and device integration (one selector one resistor) or destructive read operation (complementary resistive switching). Here, we introduce a self-selective memory cell based on hexagonal boron nitride and graphene in a vertical heterostructure. Combining non-volatile and volatile memory operations in the two hexagonal boron nitride layers, we demonstrate a self-selectivity of 1010 with an on/off resistance ratio larger than 103. The graphene layer efficiently blocks the diffusion of volatile silver filaments to integrate the volatile and non-volatile kinetics in a novel way. Our self-selective memory minimizes sneak currents on large-scale memory operation, thereby achieving a practical readout margin for terabit-scale and energy-efficient memory integration. Designing large-scale crossbar arrays for energy efficient neuromorphic computing systems remains a challenge. Here, the authors propose Van der Waals (h-BN/graphene/h-BN) self-selective memory design able to combine, in the same cell, non-volatile and volatile behaviors with negligible sneak current.
Collapse
|
13
|
Jeon YR, Abbas Y, Sokolov AS, Kim S, Ku B, Choi C. Study of in Situ Silver Migration in Amorphous Boron Nitride CBRAM Device. ACS Appl Mater Interfaces 2019; 11:23329-23336. [PMID: 31252457 DOI: 10.1021/acsami.9b05384] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We report the dependence of the thickness of amorphous boron nitride (a-BN) on the characteristics of conductive bridge random access memory (CBRAM) structured with the Ag/a-BN/Pt stacking sequence. The a-BN thin film layers of three different thicknesses of 5.5, 11, and 21.5 nm were prepared by the sputtering deposition. Depending on the thickness of the a-BN layer, the devices are found to be in either low-resistance state (LRS) or high-resistance state (HRS) prior to any consecutive switching cycle. All devices with 5.5 nm thick a-BN switching layer are in LRS as the pristine state, while devices with 21.5 nm thick a-BN layer are found to be in HRS as the pristine state. To attain reliable switching cycles, initial RESET and electroforming process are necessarily required for the devices with 5.5 and 21.5 nm thick a-BN layer, respectively. However, the devices with the a-BN layer of thickness between 5.5 and 21.5 nm in pristine states are in either HRS or LRS. This dependence of the a-BN thickness on different resistance states in the pristine state can be explained by in situ Ag diffusion during its sputter deposition to form a top electrode on the a-BN layer. Our finding shows a detailed investigation and a deep understanding of the switching mechanism of Ag/a-BN/Pt CBRAM devices with respect to different a-BN thicknesses for the future computing system.
Collapse
Affiliation(s)
- Yu-Rim Jeon
- Division of Materials Science and Engineering , Hanyang University , Seoul 04763 , Republic of Korea
| | - Yawar Abbas
- Department of Physics , Khalifa University , Abu Dhabi 127788 , United Arab Emirates
| | - Andrey Sergeevich Sokolov
- Division of Materials Science and Engineering , Hanyang University , Seoul 04763 , Republic of Korea
| | - Sohyeon Kim
- Division of Materials Science and Engineering , Hanyang University , Seoul 04763 , Republic of Korea
| | - Boncheol Ku
- Division of Materials Science and Engineering , Hanyang University , Seoul 04763 , Republic of Korea
| | - Changhwan Choi
- Division of Materials Science and Engineering , Hanyang University , Seoul 04763 , Republic of Korea
| |
Collapse
|
14
|
Younis A, Li S. Microscopic investigations of switching phenomenon in memristive systems: a mini review. RSC Adv 2018; 8:28763-28774. [PMID: 35542462 PMCID: PMC9084341 DOI: 10.1039/c8ra05340e] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/22/2018] [Accepted: 07/24/2018] [Indexed: 11/21/2022] Open
Abstract
Resistive switching memories have been regarded as one of the most up and coming memory systems and researchers have shown great interest in them because of their simple structure, high speed and low fabrication cost. These memory systems also have great potential for scaling, however, this has been difficult to achieve without detailed understanding of underlying switching mechanisms. Meanwhile, scaling down could also raise reliability concerns in its performance. This work provides an overview of various switching mechanisms and their investigations at nanoscale levels using high resolution microscopy techniques. In this mini review, the main focus was to understand the working mechanism derived from the so-called filament model. The high resolution conductive atomic force microscope, transmission electron microscope and scanning electron microscopes are the best tools available to investigate the dynamics of filamentary switching. Several issues with the existing techniques are also highlighted.
Collapse
Affiliation(s)
- Adnan Younis
- School of Materials Science and Engineering, University of New South Wales Sydney 2052 NSW Australia
| | - Sean Li
- School of Materials Science and Engineering, University of New South Wales Sydney 2052 NSW Australia
| |
Collapse
|