Electric-field-induced metal maintained by current of the Mott insulator Ca2RuO4

Room-Temperature Possible Current-Induced Transition in Ca2RuO4 Thin Films Grown Through Intercalation-Like Cation Diffusion in the A2BO4 Ruddlesden-Popper Structure

Cation deficiency tuning is a central issue in thin-film epitaxy of functional metal oxides, as it is typically more difficult than anion deficiency tuning, as anions can be readily supplied from gas sources. Here, highly effective internal deficiency compensation of Ru cations is demonstrated for Ca2RuO4 epitaxial films based on diffusive transfer of metal cations in the A2BO4 Ruddlesden-Popper lattice from solid-phase cation sources. Through detailed structural characterization of Ca2RuO4/LaAlO3 (001) thin films grown with external cation sources by solid-phase epitaxy, the occurrence of intercalation-like, interstitial diffusion of La cations (from the substrates) in the A2BO4 structure is revealed, and that of Ru cations is also suggested. Relying on the interstitial-type diffusion, an optimized Ru deficiency compensation method, which does not induce the formation of Can +1RunO3 n +1 Ruddlesden-Popper impurity phases with higher n, is proposed for Ca2RuO4 epitaxial films. In the Ca2RuO4/LaAlO3 (001) thin films grown with Ru deficiency compensation, record-high resistivity values (102-10-1 Ω cm) and a large (more than 200 K) increase in the temperature range of the nonlinear transport properties are demonstrated by transport measurements, demonstrating the possible advantages of this method in the control of the current-induced quantum phase transition of Ca2RuO4.

Emerging new phases in correlated Mott insulator Ca2RuO4

The Mott insulator Ca2RuO4is a paradigmatic example among transition metal oxides, where the interplay of charge, spin, orbital, and lattice degrees of freedom leads to competing quantum phases. In this paper, we focus on and review some key aspects, from the underlying physical framework and its basic properties, to recent theoretical efforts that aim to trigger unconventional quantum ground states, using several external parameters and stimuli. Using first-principle calculations, we demonstrate that Ca2RuO4shows a spin splitting in the reciprocal space, and identify it as an altermagnetic candidate material. The non relativistic spin-splitting has an orbital selective nature, dictated by the local crystallographic symmetry. Next, we consider two routes that may trigger exotic quantum states. The first one corresponds to transition metal substitution of the 4d4Ru with isovalent 3d3ions. This substitutional doping may alter the spin-orbital correlations favoring the emergence of negative thermal expansion. The second route explores fledgling states arising in a non-equilibrium steady state under the influence of an applied electric field. We show that the electric field can directly affect the orbital density, eventually leading to strong orbital fluctuations and the suppression of orbital imbalance, which may, in turn, reduce antiferromagnetism. These aspects suggest possible practical applications, as its unique properties may open up possibilities for augmenting existing technologies, surpassing the limitations of conventional materials.

Mott resistive switching initiated by topological defects

Avalanche resistive switching is the fundamental process that triggers the sudden change of the electrical properties in solid-state devices under the action of intense electric fields. Despite its relevance for information processing, ultrafast electronics, neuromorphic devices, resistive memories and brain-inspired computation, the nature of the local stochastic fluctuations that drive the formation of metallic regions within the insulating state has remained hidden. Here, using operando X-ray nano-imaging, we have captured the origin of resistive switching in a V2O3-based device under working conditions. V2O3 is a paradigmatic Mott material, which undergoes a first-order metal-to-insulator phase transition together with a lattice transformation that breaks the threefold rotational symmetry of the rhombohedral metallic phase. We reveal a new class of volatile electronic switching triggered by nanoscale topological defects appearing in the shear-strain based order parameter that describes the insulating phase. Our results pave the way to the use of strain engineering approaches to manipulate such topological defects and achieve the full dynamical control of the electronic Mott switching. Topology-driven, reversible electronic transitions are relevant across a broad range of quantum materials, comprising transition metal oxides, chalcogenides and kagome metals.

Nanoelectronics Using Metal-Insulator Transition

Metal-insulator transition (MIT) coupled with an ultrafast, significant, and reversible resistive change in Mott insulators has attracted tremendous interest for investigation into next-generation electronic and optoelectronic devices, as well as a fundamental understanding of condensed matter systems. Although the mechanism of MIT in Mott insulators is still controversial, great efforts have been made to understand and modulate MIT behavior for various electronic and optoelectronic applications. In this review, recent progress in the field of nanoelectronics utilizing MIT is highlighted. A brief introduction to the physics of MIT and its underlying mechanisms is begun. After discussing the MIT behaviors of various Mott insulators, recent advances in the design and fabrication of nanoelectronics devices based on MIT, including memories, gas sensors, photodetectors, logic circuits, and artificial neural networks are described. Finally, an outlook on the development and future applications of nanoelectronics utilizing MIT is provided. This review can serve as an overview and a comprehensive understanding of the design of MIT-based nanoelectronics for future electronic and optoelectronic devices.

Truncated mass divergence in a Mott metal

The Mott metal-insulator transition represents one of the most fundamental phenomena in condensed matter physics. Yet, basic tenets of the canonical Brinkman-Rice picture of Mott localization remain to be tested experimentally by quantum oscillation measurements that directly probe the quasiparticle Fermi surface and effective mass. By extending this technique to high pressure, we have examined the metallic state on the threshold of Mott localization in clean, undoped crystals of NiS2. We find that i) on approaching Mott localization, the quasiparticle mass is strongly enhanced, whereas the Fermi surface remains essentially unchanged; ii) the quasiparticle mass closely follows the divergent form predicted theoretically, establishing charge carrier slowdown as the driver for the metal-insulator transition; iii) this mass divergence is truncated by the metal-insulator transition, placing the Mott critical point inside the insulating section of the phase diagram. The inaccessibility of the Mott critical point in NiS2 parallels findings at the threshold of ferromagnetism in clean metallic systems, in which criticality at low temperature is almost universally interrupted by first-order transitions or novel emergent phases such as incommensurate magnetic order or unconventional superconductivity.

Pattern Formation by Electric-Field Quench in a Mott Crystal

The control of the Mott phase is intertwined with the spatial reorganization of the electronic states. Out-of-equilibrium driving forces typically lead to electronic patterns that are absent at equilibrium, whose nature is however often elusive. Here, we unveil a nanoscale pattern formation in the Ca2RuO4 Mott insulator. We demonstrate how an applied electric field spatially reconstructs the insulating phase that, uniquely after switching off the electric field, exhibits nanoscale stripe domains. The stripe pattern has regions with inequivalent octahedral distortions that we directly observe through high-resolution scanning transmission electron microscopy. The nanotexture depends on the orientation of the electric field; it is nonvolatile and rewritable. We theoretically simulate the charge and orbital reconstruction induced by a quench dynamics of the applied electric field providing clear-cut mechanisms for the stripe phase formation. Our results open the path for the design of nonvolatile electronics based on voltage-controlled nanometric phases.

Correlation-driven organic 3D topological insulator with relativistic fermions

Exploring new topological phenomena and functionalities induced by strong electron correlation has been a central issue in modern condensed-matter physics. One example is a topological insulator (TI) state and its functionality driven by the Coulomb repulsion rather than a spin-orbit coupling. Here, we report a 'correlation-driven' TI state realized in an organic zero-gap system α-(BETS)₂I₃. The topological surface state and chiral anomaly are observed in temperature and field dependences of resistance, indicating a three-dimensional TI state at low temperatures. Moreover, we observe a topological phase switching between the TI state and non-equilibrium Dirac semimetal state by a dc current, which is a unique functionality of a correlation-driven TI state. Our findings demonstrate that correlation-driven TIs are promising candidates not only for practical electronic devices but also as a field for discovering new topological phenomena and phases.

Colloidal superionic conductors

Nanoparticles with highly asymmetric sizes and charges that self-assemble into crystals via electrostatics may exhibit behaviors reminiscent of those of metals or superionic materials. Here, we use coarse-grained molecular simulations with underdamped Langevin dynamics to explore how a binary charged colloidal crystal reacts to an external electric field. As the field strength increases, we find transitions from insulator (ionic state), to superionic (conductive state), to laning, to complete melting (liquid state). In the superionic state, the resistivity decreases with increasing temperature, which is contrary to metals, yet the increment decreases as the electric field becomes stronger. Additionally, we verify that the dissipation of the system and the fluctuation of charge currents obey recently developed thermodynamic uncertainty relation. Our results describe charge transport mechanisms in colloidal superionic conductors.

Mott Insulator Ca2RuO4 under External Electric Field

We have investigated the structural, electronic and magnetic properties of the Mott insulator Ca2RuO4 under the application of a static external electric field in two regimes: bulk systems at small fields and thin films at large electric fields. Ca2RuO4 presents S- and L-Pbca phases with short and long c lattice constants and with large and small band gaps, respectively. Using density functional perturbation theory, we have calculated the Born effective charges as response functions. Once we break the inversion symmetry by off-centering the Ru atoms, we calculate the piezoelectric properties of the system that suggest an elongation of the system under an electric field. Finally, we investigated a four-unit cell slab in larger electric fields, and we found insulator-metal transitions induced by the electric field. By looking at the local density of states, we have found that the gap gets closed on surface layers while the rest of the sample is insulating. Correlated to the electric-field-driven gap closure, there is an increase in the lattice constant c. Regarding the magnetic properties, we have identified two phase transitions in the magnetic moments with one surface that gets completely demagnetized at the largest field investigated. In all cases, the static electric field increases the lattice constant c and reduces the band gap of Ca2RuO4, playing a role in the competition between the L-phase and the S-phase.

Nanoscale Femtosecond Dynamics of Mott Insulator (Ca0.99Sr0.01)2RuO4

Ca₂RuO₄ is a transition-metal oxide that exhibits a Mott insulator-metal transition (IMT) concurrent with a symmetry-preserving Jahn-Teller distortion (JT) at 350 K. The coincidence of these two transitions demonstrates a high level of coupling between the electronic and structural degrees of freedom in Ca₂RuO₄. Using spectroscopic measurements with nanoscale spatial resolution, we interrogate the interplay of the JT and IMT through the temperature-driven transition. Then, we introduce photoexcitation with subpicosecond temporal resolution to explore the coupling of the JT and IMT via electron-hole injection under ambient conditions. Through the temperature-driven IMT, we observe phase coexistence in the form of a stripe phase existing at the domain wall between macroscopic insulating and metallic domains. Through ultrafast carrier injection, we observe the formation of midgap states via enhanced optical absorption. We propose that these midgap states become trapped by lattice polarons originating from the local perturbation of the JT.

Hafnium Oxide (HfO2 ) - A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Hafnium oxide (HfO₂ ) is one of the mature high-k dielectrics that has been standing strong in the memory arena over the last two decades. Its dielectric properties have been researched rigorously for the development of flash memory devices. In this review, the application of HfO₂ in two main emerging nonvolatile memory technologies is surveyed, namely resistive random access memory and ferroelectric memory. How the properties of HfO₂ equip the former to achieve superlative performance with high-speed reliable switching, excellent endurance, and retention is discussed. The parameters to control HfO₂ domains are further discussed, which can unleash the ferroelectric properties in memory applications. Finally, the prospect of HfO₂ materials in emerging applications, such as high-density memory and neuromorphic devices are examined, and the various challenges of HfO₂ -based resistive random access memory and ferroelectric memory devices are addressed with a future outlook.

Keldysh Space Control of Charge Dynamics in a Strongly Driven Mott Insulator

The fate of a Mott insulator under strong low frequency optical driving conditions is a fundamental problem in quantum many-body dynamics. Using ultrafast broadband optical spectroscopy, we measured the transient electronic structure and charge dynamics of an off-resonantly pumped Mott insulator Ca_{2}RuO_{4}. We observe coherent bandwidth renormalization and nonlinear doublon-holon pair production occurring in rapid succession within a sub-100-fs pump pulse duration. By sweeping the electric field amplitude, we demonstrate continuous bandwidth tuning and a Keldysh crossover from a multiphoton absorption to quantum tunneling dominated pair production regime. Our results provide a procedure to control coherent and nonlinear heating processes in Mott insulators, facilitating the discovery of novel out-of-equilibrium phenomena in strongly correlated systems.

High-Order Harmonic Generation and Its Unconventional Scaling Law in the Mott-Insulating Ca_{2}RuO_{4}

Competition and cooperation among orders is at the heart of many-body physics in strongly correlated materials and leads to their rich physical properties. It is crucial to investigate what impact many-body physics has on extreme nonlinear optical phenomena, with the possibility of controlling material properties by light. However, the effect of competing orders and electron-electron correlations on highly nonlinear optical phenomena has not yet been experimentally clarified. Here, we investigated high-order harmonic generation from the Mott-insulating phase of Ca_{2}RuO_{4}. Changing the gap energy in Ca_{2}RuO_{4} as a function of temperature, we observed a strong enhancement of high order harmonic generation at 50 K, increasing up to several hundred times compared to room temperature. We discovered that this enhancement can be well reproduced by an empirical scaling law that depends only on the material gap energy and photon emission energy. Such a scaling law can hardly be explained by the electronic structure change in the single particle model and has not been predicted by previous theoretical studies on HHG in the simple Mott-Hubbard model. Our results suggest that the highly nonlinear optical response of strongly correlated materials is influenced by competition among the multiple degrees of freedom and electron-electron correlations.

Designing and controlling the properties of transition metal oxide quantum materials

This Perspective addresses the design, creation, characterization and control of synthetic quantum materials with strong electronic correlations. We show how emerging synergies between theoretical/computational approaches and materials design/experimental probes are driving recent advances in the discovery, understanding and control of new electronic behaviour in materials systems with interesting and potentially technologically important properties. The focus here is on transition metal oxides, where electronic correlations lead to a myriad of functional properties including superconductivity, magnetism, Mott transitions, multiferroicity and emergent behaviour at picoscale-designed interfaces. Current opportunities and challenges are also addressed, including possible new discoveries of non-equilibrium phenomena and optical control of correlated quantum phases of transition metal oxides.

Coupled spin-orbital fluctuations in a three orbital model for 4dand 5doxides with electron fillingsn3, 4, 5-application to NaOsO3, Ca2RuO4and Sr2IrO4

A unified approach is presented for investigating coupled spin-orbital fluctuations within a realistic three-orbital model for strongly spin-orbit coupled systems with electron fillingsn= 3, 4, 5 in thet_2gsector ofd_yz,d_xz,d_xyorbitals. A generalized fluctuation propagator is constructed which is consistent with the generalized self-consistent Hartree-Fock approximation where all Coulomb interaction contributions involving orbital diagonal and off-diagonal spin and charge condensates are included. Besides the low-energy magnon, intermediate-energy orbiton and spin-orbiton, and high-energy spin-orbit exciton modes, the generalized spectral function also shows other high-energy excitations such as the Hund's coupling induced gapped magnon modes. We relate the characteristic features of the coupled spin-orbital excitations to the complex magnetic behavior resulting from the interplay between electronic bands, spin-orbit coupling, Coulomb interactions, and structural distortion effects, as realized in the compounds NaOsO₃, Ca₂RuO₄, and Sr₂IrO₄.

Accessing the Spectral Function in a Current-Carrying Device

The presence of an electrical transport current in a material is one of the simplest and most important realizations of nonequilibrium physics. The current density breaks the crystalline symmetry and can give rise to dramatic phenomena, such as sliding charge density waves, insulator-to-metal transitions, or gap openings in topologically protected states. Almost nothing is known about how a current influences the electron spectral function, which characterizes most of the solid's electronic, optical, and chemical properties. Here we show that angle-resolved photoemission spectroscopy with a nanoscale light spot provides not only a wealth of information on local equilibrium properties, but also opens the possibility to access the local nonequilibrium spectral function in the presence of a transport current. Unifying spectroscopic and transport measurements in this way allows simultaneous noninvasive local measurements of the composition, structure, many-body effects, and carrier mobility in the presence of high current densities. In the particular case of our graphene-based device, we are able to correlate the presence of structural defects with locally reduced carrier lifetimes in the spectral function and a locally reduced mobility with a spatial resolution of 500 nm.

Magnetic reorientation transition in a three orbital model for Ca2RuO4-interplay of spin-orbit coupling, tetragonal distortion, and Coulomb interactions

Including the orbital off-diagonal spin and charge condensates in the self consistent determination of magnetic order within a realistic three-orbital model for the 4d4compound Ca2RuO4, reveals a host of novel features including strong and anisotropic spin-orbit coupling (SOC) renormalization, coupling of strong orbital magnetic moments to orbital fields, and a magnetic reorientation transition. Highlighting the rich interplay between orbital geometry and overlap, SOC, Coulomb interactions, tetragonal distortion, and staggered octahedral tilting and rotation, our investigation yields a planar antiferromagnetic (AFM) order for moderate tetragonal distortion, with easya-bplane and easybaxis anisotropies, along with small canting of the dominantlyyz,xzorbital moments. With decreasing tetragonal distortion, we find a magnetic reorientation transition from the dominantly planar AFM order to a dominantlycaxis ferromagnetic order with significantxyorbital moment.

Stable and Tunable Current-Induced Phase Transition in Epitaxial Thin Films of Ca2RuO4

Owing to the recent discovery of the current-induced metal-insulator transition and unprecedented electronic properties of the concomitant phases of calcium ruthenate Ca₂RuO₄, it is emerging as an important material. To further explore the properties, the growth of epitaxial thin films of Ca₂RuO₄ is receiving more attention, as high current densities can be applied to thin-film samples and the amount can be precisely controlled in an experimental environment. However, it is difficult to grow high-quality thin films of Ca₂RuO₄ due to the easy formation of the crystal defects originating from the sublimation of RuO₄; therefore, the metal-insulator transition of Ca₂RuO₄ is typically not observed in the thin films. Herein, a stable current-induced metal-insulator transition is achieved in the high-quality thin films of Ca₂RuO₄ grown by solid-phase epitaxy under high growth temperatures and pressures. In the Ca₂RuO₄ thin films grown by ex situ annealing at >1200 °C and 1.0 atm, continuous changes in the resistance of over 2 orders of magnitude are induced by currents with a precise dependence of the resistance on the current amplitude. A hysteretic, abrupt resistive transition is also observed in the thin films from the resistance-temperature measurements conducted under constant-voltage (variable-current) conditions with controllability of the transition temperature. A clear resistive switching by the current-induced transition is demonstrated in the current-electric-field characteristics, and the switching currents and fields are shown to be very stable. These results represent a significant step toward understanding the high-current-density properties of Ca₂RuO₄ and the future development of Mott-electronic devices based on electricity-driven transitions.

Co-appearance of superconductivity and ferromagnetism in a Ca2RuO4 nanofilm crystal

By tuning the physical and chemical pressures of layered perovskite materials we can realize the quantum states of both superconductors and insulators. By reducing the thickness of a layered crystal to a nanometer level, a nanofilm crystal can provide novel quantum states that have not previously been found in bulk crystals. Here we report the realization of high-temperature superconductivity in Ca₂RuO₄ nanofilm single crystals. Ca₂RuO₄ thin film with the highest transition temperature T_c (midpoint) of 64 K exhibits zero resistance in electric transport measurements. The superconducting critical current exhibited a logarithmic dependence on temperature and was enhanced by an external magnetic field. Magnetic measurements revealed a ferromagnetic transition at 180 K and diamagnetic magnetization due to superconductivity. Our results suggest the co-appearance of superconductivity and ferromagnetism in Ca₂RuO₄ nanofilm crystals. We also found that the induced bias current and the tuned film thickness caused a superconductor-insulator transition. The fabrication of micro-nanocrystals made of layered material enables us to discuss rich superconducting phenomena in ruthenates.

Unique Crystal Structure of Ca_{2}RuO_{4} in the Current Stabilized Semimetallic State

The electric-current stabilized semimetallic state in the quasi-two-dimensional Mott insulator Ca_{2}RuO_{4} exhibits an exceptionally strong diamagnetism. Through a comprehensive study using neutron and x-ray diffraction, we show that this nonequilibrium phase assumes a crystal structure distinct from those of equilibrium metallic phases realized in the ruthenates by chemical doping, high pressure, and epitaxial strain, which in turn leads to a distinct electronic band structure. Dynamical mean field theory calculations based on the crystallographically refined atomic coordinates and realistic Coulomb repulsion parameters indicate a semimetallic state with partially gapped Fermi surface. Our neutron diffraction data show that the nonequilibrium behavior is homogeneous, with antiferromagnetic long-range order completely suppressed. These results provide a new basis for theoretical work on the origin of the unusual nonequilibrium diamagnetism in Ca_{2}RuO_{4}.

In Situ Control of Diamagnetism by Electric Current in Ca_{3}(Ru_{1-x}Ti_{x})_{2}O_{7}

Nonequilibrium steady state conditions induced by a dc current can alter the physical properties of strongly correlated electron systems. In this regard, it was recently shown that dc current can trigger novel electronic states, such as current-induced diamagnetism, which cannot be realized in equilibrium conditions. However, reversible control of diamagnetism has not been achieved yet. Here, we demonstrate reversible in situ control between a Mott insulating state and a diamagnetic semimetal-like state by a dc current in the Ti-substituted bilayer ruthenate Ca_{3}(Ru_{1-x}Ti_{x})_{2}O_{7} (x=0.5%). By performing simultaneous magnetic and resistive measurements, we map out the temperature vs current-density phase diagram in the nonequilibrium steady state of this material. The present results open up the possibility of creating novel electronic states in a variety of strongly correlated electron systems under dc current.

Insulator-metal transition induced by electric voltage in a ruthenate Mott insulator

We report the observation of electric-voltage induced insulator-metal phase transition in a ruthenate Mott insulator Ca₃(Ru_0.9Ti_0.1)₂O₇. We show that the electric field effect dominates and leads to a sharp phase transition at measurement temperatures far below the Mott transition, whereas the thermal effect becomes more significant and broadens the phase transition as the measurement temperature approaches the insulator-metal transition. The electric field induced insulator-metal transition is presumably attributed to the avalanche breakdown of the correlated insulating state when driven out of equilibrium. This work highlights the strategy of using electric voltage to control the phase transition of this system in addition to other nonthermal parameters such as magnetic field and pressure reported previously.

Pseudo-Jahn-Teller Effect and Magnetoelastic Coupling in Spin-Orbit Mott Insulators

The consequences of the Jahn-Teller (JT) orbital-lattice coupling for magnetism of pseudospin J_{eff}=1/2 and J_{eff}=0 compounds are addressed. In the former case, represented by Sr_{2}IrO_{4}, this coupling generates, through the so-called pseudo-JT effect, orthorhombic deformations of a crystal concomitant with magnetic ordering. The orthorhombicity axis is tied to the magnetization and rotates with it under magnetic field. The theory resolves a number of puzzles in Sr_{2}IrO_{4} such as the origin of in-plane magnetic anisotropy and magnon gaps, metamagnetic transition, etc. In J_{eff}=0 systems, the pseudo-JT effect leads to spin-nematic transition well above magnetic ordering, which may explain the origin of "orbital order" in Ca_{2}RuO_{4}.

In situ strain tuning of the metal-insulator-transition of Ca2RuO4 in angle-resolved photoemission experiments

Pressure plays a key role in the study of quantum materials. Its application in angle resolved photoemission (ARPES) studies, however, has so far been limited. Here, we report the evolution of the k-space electronic structure of bulk Ca₂RuO₄, lightly doped with Pr, under uniaxial strain. Using ultrathin plate-like crystals, we achieve uniaxial strain levels up to −4.1%, sufficient to suppress the insulating Mott phase and access the previously unexplored electronic structure of the metallic state at low temperature. ARPES experiments performed while tuning the uniaxial strain reveal that metallicity emerges from a marked redistribution of charge within the Ru t_2g shell, accompanied by a sudden collapse of the spectral weight in the lower Hubbard band and the emergence of a well-defined Fermi surface which is devoid of pseudogaps. Our results highlight the profound roles of lattice energetics and of the multiorbital nature of Ca₂RuO₄ in this archetypal Mott transition and open new perspectives for spectroscopic measurements.

The role of the lattice in the correlated metal-insulator transition of Ca₂RuO₄ has led to significant interest but experiments that are at the same time sensitive to crystal and electronic structure are difficult. Riccò et al. successfully combine ARPES measurements with in situ strain tuning across the Mott transition.

Spectroscopic Studies on the Metal-Insulator Transition Mechanism in Correlated Materials

The metal-insulator transition (MIT) in correlated materials is a novel phenomenon that accompanies a large change in resistivity, often many orders of magnitude. It is important in its own right but its switching behavior in resistivity can be useful for device applications. From the material physics point of view, the starting point of the research on the MIT should be to understand the microscopic mechanism. Here, an overview of recent efforts to unravel the microscopic mechanisms for various types of MITs in correlated materials is provided. Research has focused on transition metal oxides (TMOs), but transition metal chalcogenides have also been studied. Along the way, a new class of MIT materials is discovered, the so-called relativistic Mott insulators in 5d TMOs. Distortions in the MO₆ (M = transition metal) octahedron are found to have a large and peculiar effect on the band structure in an orbital dependent way, possibly paving a way to the orbital selective Mott transition. In the final section, the character of the materials suitable for applications is summarized, followed by a brief discussion of some of the efforts to control MITs in correlated materials, including a dynamical approach using light.

RETRACTED: Current-induced strong diamagnetism in the Mott insulator Ca2RuO4

Mott insulators can host a surprisingly diverse set of quantum phenomena when their frozen electrons are perturbed by various stimuli. Superconductivity, metal-insulator transition, and colossal magnetoresistance induced by element substitution, pressure, and magnetic field are prominent examples. Here we report strong diamagnetism in the Mott insulator calcium ruthenate (Ca2RuO4) induced by dc electric current. The application of a current density of merely 1 ampere per centimeter squared induces diamagnetism stronger than that in other nonsuperconducting materials. This change is coincident with changes in the transport properties as the system becomes semimetallic. These findings suggest that dc current may be a means to control the properties of materials in the vicinity of a Mott insulating transition.

Current quantization and fractal hierarchy in a driven repulsive lattice gas

Driven lattice gases are widely regarded as the paradigm of collective phenomena out of equilibrium. While such models are usually studied with nearest-neighbor interactions, many empirical driven systems are dominated by slowly decaying interactions such as dipole-dipole and Van der Waals forces. Motivated by this gap, we study the nonequilibrium stationary state of a driven lattice gas with slow-decayed repulsive interactions at zero temperature. By numerical and analytical calculations of the particle current as a function of the density and of the driving field, we identify (i) an abrupt breakdown transition between insulating and conducting states, (ii) current quantization into discrete phases where a finite current flows with infinite differential resistivity, and (iii) a fractal hierarchy of excitations, related to the Farey sequences of number theory. We argue that the origin of these effects is the competition between scales, which also causes the counterintuitive phenomenon that crystalline states can melt by increasing the density.

Towards properties on demand in quantum materials

The past decade has witnessed an explosion in the field of quantum materials, headlined by the predictions and discoveries of novel Landau-symmetry-broken phases in correlated electron systems, topological phases in systems with strong spin-orbit coupling, and ultra-manipulable materials platforms based on two-dimensional van der Waals crystals. Discovering pathways to experimentally realize quantum phases of matter and exert control over their properties is a central goal of modern condensed-matter physics, which holds promise for a new generation of electronic/photonic devices with currently inaccessible and likely unimaginable functionalities. In this Review, we describe emerging strategies for selectively perturbing microscopic interaction parameters, which can be used to transform materials into a desired quantum state. Particular emphasis will be placed on recent successes to tailor electronic interaction parameters through the application of intense fields, impulsive electromagnetic stimulation, and nanostructuring or interface engineering. Together these approaches outline a potential roadmap to an era of quantum phenomena on demand.

Microscopic Theory of Resistive Switching in Ordered Insulators: Electronic versus Thermal Mechanisms

We investigate the dramatic switch of resistance in ordered correlated insulators when they are driven out of equilibrium by a strong voltage bias. Microscopic calculations on a driven-dissipative lattice of interacting electrons explain the main experimental features of resistive switching (RS), such as the hysteretic I-V curves and the formation of hot conductive filaments. The energy-resolved electron distribution at the RS reveals the underlying nonequilibrium electronic mechanism, namely Landau-Zener tunneling, and also justifies a thermal description in which the hot-electron temperature, estimated from the first moment of the distribution, matches the equilibrium-phase transition temperature. We discuss the tangled relationship between filament growth and negative differential resistance and the influence of crystallographic structure and disorder in the RS.

Three-dimensional resistivity and switching between correlated electronic states in 1T-TaS2

Recent demonstrations of controlled switching between different ordered macroscopic states by impulsive electromagnetic perturbations in complex materials have opened some fundamental questions on the mechanisms responsible for such remarkable behavior. Here we experimentally address the question of whether two-dimensional (2D) Mott physics can be responsible for unusual switching between states of different electronic order in the layered dichalcogenide 1T-TaS₂, or it is a result of subtle inter-layer “orbitronic” re-ordering of its stacking structure. We report on in-plane (IP) and out-of-plane (OP) resistance switching by current-pulse injection at low temperatures. Elucidating the controversial theoretical predictions, we also report on measurements of the anisotropy of the electrical resistivity below room temperature. From the T-dependence of ρ_⊥ and ρ_||, we surmise that the resistivity is more consistent with collective motion than single particle diffusive or band-like transport. The relaxation dynamics of the metastable state for both IP and OP electron transport are seemingly governed by the same mesoscopic quantum re-ordering process. We conclude that 1T-TaS₂ shows resistance switching arising from an interplay of both IP and OP correlations.

Field-Driven Mott Gap Collapse and Resistive Switch in Correlated Insulators

Mott insulators are "unsuccessful metals" in which Coulomb repulsion prevents charge conduction despite a metal-like concentration of conduction electrons. The possibility to unlock the frozen carriers with an electric field offers tantalizing prospects of realizing new Mott-based microelectronic devices. Here we unveil how such unlocking happens in a simple model that shows the coexistence of a stable Mott insulator and a metastable metal. Considering a slab subject to a linear potential drop, we find, by means of the dynamical mean-field theory, that the electric breakdown of the Mott insulator occurs via a first-order insulator-to-metal transition characterized by an abrupt gap collapse in sharp contrast to the standard Zener breakdown. The switch on of conduction is due to the field-driven stabilization of the metastable metallic phase. Outside the region of insulator-metal coexistence, the electric breakdown occurs through a more conventional quantum tunneling across the Hubbard bands tilted by the field. Our findings rationalize recent experimental observations and may offer a guideline for future technological research.

Doping-Induced Ferromagnetism and Possible Triplet Pairing in d(4) Mott Insulators

We study the effects of electron doping in Mott insulators containing d(4) ions such as Ru(4+), Os(4+), Rh(5+), and Ir(5+) with J=0 singlet ground state. Depending on the strength of the spin-orbit coupling, the undoped systems are either nonmagnetic or host an unusual, excitonic magnetism arising from a condensation of the excited J=1 triplet states of t(2g)(4). We find that the interaction between J excitons and doped carriers strongly supports ferromagnetism, converting both the nonmagnetic and antiferromagnetic phases of the parent insulator into a ferromagnetic metal, and further to a nonmagnetic metal. Close to the ferromagnetic phase, the low-energy spin response is dominated by intense paramagnon excitations that may act as mediators of a triplet pairing.