1
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Lee W, Liu VS, Zhang Z, Kim S, Gong R, Du X, Pham K, Poirier T, Hao Z, Edgar JH, Kim P, Zu C, Davis EJ, Yao NY. Intrinsic High-Fidelity Spin Polarization of Charged Vacancies in Hexagonal Boron Nitride. PHYSICAL REVIEW LETTERS 2025; 134:096202. [PMID: 40131064 DOI: 10.1103/physrevlett.134.096202] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2024] [Accepted: 01/27/2025] [Indexed: 03/26/2025]
Abstract
The negatively charged boron vacancy (V_{B}^{-}) in hexagonal boron nitride (hBN) has garnered significant attention among defects in two-dimensional materials. This owes, in part, to its deterministic generation, well-characterized atomic structure, and optical polarizability at room temperature. We investigate the latter through extensive measurements probing both the ground and excited state polarization dynamics. We develop a semiclassical model based on these measurements that predicts a near-unity degree of spin polarization, surpassing other solid-state spin defects under ambient conditions. Building upon our model, we include the presence of nuclear spin degrees of freedom adjacent to the V_{B}^{-} and perform a comprehensive set of Lindbladian numerics to investigate the hyperfine-induced polarization of the nuclear spins. Our simulations predict a number of important features that emerge as a function of magnetic field which are borne out by experiment.
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Affiliation(s)
- W Lee
- Harvard University, Department of Physics, Cambridge, Massachusetts 02138, USA
| | - V S Liu
- Harvard University, Department of Physics, Cambridge, Massachusetts 02138, USA
| | - Z Zhang
- Harvard University, Department of Physics, Cambridge, Massachusetts 02138, USA
| | - S Kim
- Harvard University, Department of Physics, Cambridge, Massachusetts 02138, USA
| | - R Gong
- Washington University, Department of Physics, St. Louis, Missouri 63130, USA
| | - X Du
- Washington University, Department of Physics, St. Louis, Missouri 63130, USA
| | - K Pham
- Harvard University, Department of Physics, Cambridge, Massachusetts 02138, USA
| | - T Poirier
- Kansas State University, Tim Taylor Department of Chemical Engineering, Manhattan, Kansas 66506, USA
| | - Z Hao
- Harvard University, Department of Physics, Cambridge, Massachusetts 02138, USA
| | - J H Edgar
- Kansas State University, Tim Taylor Department of Chemical Engineering, Manhattan, Kansas 66506, USA
| | - P Kim
- Harvard University, Department of Physics, Cambridge, Massachusetts 02138, USA
| | - C Zu
- Washington University, Department of Physics, St. Louis, Missouri 63130, USA
| | - E J Davis
- Harvard University, Department of Physics, Cambridge, Massachusetts 02138, USA
- New York University, Department of Physics, New York, New York 10003, USA
| | - N Y Yao
- Harvard University, Department of Physics, Cambridge, Massachusetts 02138, USA
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2
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Gottscholl A, Kraus H, Aichinger T, Cochrane CJ. Enhancing the the electrical readout of the spin-dependent recombination current in SiC JFETs for EDMR based magnetometry using a tandem (de-)modulation technique. Sci Rep 2024; 14:14283. [PMID: 38902377 PMCID: PMC11258347 DOI: 10.1038/s41598-024-64595-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/14/2024] [Accepted: 06/11/2024] [Indexed: 06/22/2024] Open
Abstract
Electrically detected magnetic resonance (EDMR) is a promising method to readout spins in miniaturized devices utilized as quantum magnetometers. However, the sensitivity has remained challenging. In this study, we present a tandem (de-)modulation technique based on a combination of magnetic field and radio frequency modulation. By enabling higher demodulation frequencies to avoid 1/f-noise, enhancing self-calibration capabilities, and eliminating background signals by 3 orders of magnitude, this technique represents a significant advancement in the field of EDMR-based sensors. This novel approach paves the way for EDMR being the ideal candidate for ultra-sensitive magnetometry at ambient conditions without any optical components, which brings it one step closer to a chip-based quantum sensor for future applications.
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Affiliation(s)
- Andreas Gottscholl
- NASA Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr, Pasadena, CA, 91104, USA.
| | - Hannes Kraus
- NASA Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr, Pasadena, CA, 91104, USA
| | - Thomas Aichinger
- Infineon Technologies Austria AG, Siemensstraße 2, 9500, Villach, Austria
| | - Corey J Cochrane
- NASA Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr, Pasadena, CA, 91104, USA
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3
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Castelletto S, Lew CTK, Lin WX, Xu JS. Quantum systems in silicon carbide for sensing applications. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2023; 87:014501. [PMID: 38029424 DOI: 10.1088/1361-6633/ad10b3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2023] [Accepted: 11/29/2023] [Indexed: 12/01/2023]
Abstract
This paper summarizes recent studies identifying key qubit systems in silicon carbide (SiC) for quantum sensing of magnetic, electric fields, and temperature at the nano and microscale. The properties of colour centres in SiC, that can be used for quantum sensing, are reviewed with a focus on paramagnetic colour centres and their spin Hamiltonians describing Zeeman splitting, Stark effect, and hyperfine interactions. These properties are then mapped onto various methods for their initialization, control, and read-out. We then summarised methods used for a spin and charge state control in various colour centres in SiC. These properties and methods are then described in the context of quantum sensing applications in magnetometry, thermometry, and electrometry. Current state-of-the art sensitivities are compiled and approaches to enhance the sensitivity are proposed. The large variety of methods for control and read-out, combined with the ability to scale this material in integrated photonics chips operating in harsh environments, places SiC at the forefront of future quantum sensing technology based on semiconductors.
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Affiliation(s)
- S Castelletto
- School of Engineering, RMIT University, Melbourne, Victoria 3001, Australia
| | - C T-K Lew
- School of Physics, The University of Melbourne, Melbourne, Victoria 3010, Australia
| | - Wu-Xi Lin
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, People's Republic of China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, People's Republic of China
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4
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Sotoma S, Abe H, Miyanoiri Y, Ohshima T, Harada Y. Highly Dispersed 3C Silicon Carbide Nanoparticles with a Polydopamine/Polyglycerol Shell for Versatile Functionalization. ACS APPLIED MATERIALS & INTERFACES 2023; 15:21413-21424. [PMID: 37071076 DOI: 10.1021/acsami.3c00194] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
Silicon carbide (SiC) nanoparticles containing lattice defects are attracting considerable attention as next-generation imaging probes and quantum sensors for visualizing and sensing life activities. However, SiC nanoparticles are not currently used in biomedical applications because of the lack of technology for controlling their physicochemical properties. Therefore, in this study, SiC nanoparticles are deaggregated, surface-coated, functionalized, and selectively labeled to biomolecules of interest. A thermal-oxidation chemical-etching method is developed for deaggregating and producing a high yield of dispersed metal-contaminant-free SiC nanoparticles. We further demonstrated a polydopamine coating with controllable thickness that can be used as a platform for decorating gold nanoparticles on the surface, enabling photothermal application. We also demonstrated a polyglycerol coating, which gives excellent dispersity to SiC nanoparticles. Furthermore, a single-pot method is developed to produce mono/multifunctional polyglycerol-modified SiC nanoparticles. Using this method, CD44 proteins on cell surfaces are selectively labeled through biotin-mediated immunostaining. The methods developed in this study are fundamental for applying SiC nanoparticles to biomedical applications and should considerably accelerate the development of various SiC nanoparticles to exploit their potential applications in bioimaging and biosensing.
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Affiliation(s)
- Shingo Sotoma
- Institute for Protein Research, Osaka University, 3-2 Yamadaoka, Suita, Osaka 565-0871, Japan
- Faculty of Molecular Chemistry and Engineering, Kyoto Institute of Technology, Kyoto 606-8585, Japan
| | - Hiroshi Abe
- National Institutes for Quantum Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
| | - Yohei Miyanoiri
- Institute for Protein Research, Osaka University, 3-2 Yamadaoka, Suita, Osaka 565-0871, Japan
| | - Takeshi Ohshima
- National Institutes for Quantum Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
| | - Yoshie Harada
- Institute for Protein Research, Osaka University, 3-2 Yamadaoka, Suita, Osaka 565-0871, Japan
- Center for Quantum Information and Quantum Biology, Osaka University, Osaka 565-0871, Japan
- Premium Research Institute for Human Metaverse Medicine (WPI-PRIMe), Osaka University, Osaka 565-0871, Japan
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5
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Tang H, Barr AR, Wang G, Cappellaro P, Li J. First-Principles Calculation of the Temperature-Dependent Transition Energies in Spin Defects. J Phys Chem Lett 2023; 14:3266-3273. [PMID: 36977131 DOI: 10.1021/acs.jpclett.3c00314] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Spin qubits associated with color centers are promising platforms for various quantum technologies. However, to be deployed in robust quantum devices, the variations of their intrinsic properties with the external conditions, in particular temperature and strain, should be known with high precision. Unfortunately, a predictive theory on the temperature dependence of the resonance frequency of electron and nuclear spin defects in solids remains lacking. In this work, we develop a first-principles method for the temperature dependence of the zero-field splitting, hyperfine interaction, and nuclear quadrupole interaction of color centers. As a testbed, we compare our ab initio calculations with experiments for the nitrogen-vacancy (NV-) center in diamond, finding good agreements. We identify the major origin of the temperature dependence as a second-order effect of dynamic phonon vibrations, instead of the thermal-expansion strain. The method can be applied to different color centers and provides a theoretical tool for designing high-precision quantum sensors.
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Affiliation(s)
- Hao Tang
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Ariel Rebekah Barr
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Guoqing Wang
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Paola Cappellaro
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Ju Li
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
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6
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Huang B, Sheng N, Govoni M, Galli G. Quantum Simulations of Fermionic Hamiltonians with Efficient Encoding and Ansatz Schemes. J Chem Theory Comput 2023; 19:1487-1498. [PMID: 36791415 DOI: 10.1021/acs.jctc.2c01119] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/17/2023]
Abstract
We propose a computational protocol for quantum simulations of fermionic Hamiltonians on a quantum computer, enabling calculations on spin defect systems which were previously not feasible using conventional encodings and a unitary coupled-cluster ansatz of variational quantum eigensolvers. We combine a qubit-efficient encoding scheme mapping Slater determinants onto qubits with a modified qubit-coupled cluster ansatz and noise-mitigation techniques. Our strategy leads to a substantial improvement in the scaling of circuit gate counts and in the number of required qubits, and to a decrease in the number of required variational parameters, thus increasing the resilience to noise. We present results for spin defects of interest for quantum technologies, going beyond minimum models for the negatively charged nitrogen vacancy center in diamonds and the double vacancy in 4H silicon carbide (4H-SiC) and tackling a defect as complex as negatively charged silicon vacancy in 4H-SiC for the first time.
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Affiliation(s)
- Benchen Huang
- Department of Chemistry, University of Chicago, Chicago, Illinois 60637, United States
| | - Nan Sheng
- Department of Chemistry, University of Chicago, Chicago, Illinois 60637, United States
| | - Marco Govoni
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States.,Materials Science Division and Center for Molecular Engineering, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Giulia Galli
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States.,Materials Science Division and Center for Molecular Engineering, Argonne National Laboratory, Lemont, Illinois 60439, United States.,Department of Chemistry, University of Chicago, Chicago, Illinois 60637, United States
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7
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Jarmola A, Lourette S, Acosta VM, Birdwell AG, Blümler P, Budker D, Ivanov T, Malinovsky VS. Demonstration of diamond nuclear spin gyroscope. SCIENCE ADVANCES 2021; 7:eabl3840. [PMID: 34678066 PMCID: PMC8535796 DOI: 10.1126/sciadv.abl3840] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/09/2021] [Accepted: 09/01/2021] [Indexed: 05/28/2023]
Abstract
We demonstrate the operation of a rotation sensor based on the nitrogen-14 (14N) nuclear spins intrinsic to nitrogen-vacancy (NV) color centers in diamond. The sensor uses optical polarization and readout of the nuclei and a radio-frequency double-quantum pulse protocol that monitors 14N nuclear spin precession. This measurement protocol suppresses the sensitivity to temperature variations in the 14N quadrupole splitting, and it does not require microwave pulses resonant with the NV electron spin transitions. The device was tested on a rotation platform and demonstrated a sensitivity of 4.7°/s (13 mHz/Hz), with a bias stability of 0.4 °/s (1.1 mHz).
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Affiliation(s)
- Andrey Jarmola
- Department of Physics, University of California, Berkeley, CA 94720, USA
- U.S. Army Research Laboratory, Adelphi, MD 20783, USA
| | - Sean Lourette
- Department of Physics, University of California, Berkeley, CA 94720, USA
- U.S. Army Research Laboratory, Adelphi, MD 20783, USA
| | - Victor M. Acosta
- Center for High Technology Materials and Department of Physics and Astronomy, University of New Mexico, Albuquerque, NM 87106, USA
| | | | - Peter Blümler
- Johannes Gutenberg-Universität Mainz, 55128 Mainz, Germany
| | - Dmitry Budker
- Department of Physics, University of California, Berkeley, CA 94720, USA
- Johannes Gutenberg-Universität Mainz, 55128 Mainz, Germany
- Helmholtz-Institut, GSI Helmholtzzentrum für Schwerionenforschung, 55128 Mainz, Germany
| | - Tony Ivanov
- U.S. Army Research Laboratory, Adelphi, MD 20783, USA
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8
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Jurgen von Bardeleben H, Cantin JL, Gerstmann U, Schmidt WG, Biktagirov T. Spin Polarization, Electron-Phonon Coupling, and Zero-Phonon Line of the NV Center in 3 C-SiC. NANO LETTERS 2021; 21:8119-8125. [PMID: 34581585 DOI: 10.1021/acs.nanolett.1c02564] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The nitrogen-vacancy (NV) center in 3C-SiC, the analog of the NV center in diamond, has recently emerged as a solid-state qubit with competitive properties and significant technological advantages. Combining first-principles calculations and magnetic resonance spectroscopy, we provide thorough insight into its magneto-optical properties. By applying resonantly excited electron paramagnetic resonance spectroscopy, we identified the zero-phonon absorption line of the 3A2 → 3E transition at 1289 nm (within the telecom O-band) and measured its phonon sideband, the analysis of which reveals a Huang-Rhys factor of S = 2.85 and a Debye-Waller factor of 5.8%. The low-temperature spin-lattice relaxation time was found to be exceptionally long (T1 = 17 s at 4 K). All these properties make NV in 3C-SiC a strong competitor for qubit applications. In addition, the strong variation of the zero-field splitting in the range 4-380 K allows its application for nanoscale thermal sensing.
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Affiliation(s)
- Hans Jurgen von Bardeleben
- Sorbonne Université, Institut des Nanosciences de Paris, UMR 7588 au CNRS 4, place Jussieu, 75005 Paris, France
| | - Jean-Louis Cantin
- Sorbonne Université, Institut des Nanosciences de Paris, UMR 7588 au CNRS 4, place Jussieu, 75005 Paris, France
| | - Uwe Gerstmann
- Universität Paderborn, Department Physik, Warburger Str. 100, 33098 Paderborn, Germany
| | - Wolf Gero Schmidt
- Universität Paderborn, Department Physik, Warburger Str. 100, 33098 Paderborn, Germany
| | - Timur Biktagirov
- Universität Paderborn, Department Physik, Warburger Str. 100, 33098 Paderborn, Germany
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9
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Gottscholl A, Diez M, Soltamov V, Kasper C, Krauße D, Sperlich A, Kianinia M, Bradac C, Aharonovich I, Dyakonov V. Spin defects in hBN as promising temperature, pressure and magnetic field quantum sensors. Nat Commun 2021; 12:4480. [PMID: 34294695 PMCID: PMC8298442 DOI: 10.1038/s41467-021-24725-1] [Citation(s) in RCA: 74] [Impact Index Per Article: 18.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/24/2021] [Accepted: 06/29/2021] [Indexed: 11/09/2022] Open
Abstract
Spin defects in solid-state materials are strong candidate systems for quantum information technology and sensing applications. Here we explore in details the recently discovered negatively charged boron vacancies (VB-) in hexagonal boron nitride (hBN) and demonstrate their use as atomic scale sensors for temperature, magnetic fields and externally applied pressure. These applications are possible due to the high-spin triplet ground state and bright spin-dependent photoluminescence of the VB-. Specifically, we find that the frequency shift in optically detected magnetic resonance measurements is not only sensitive to static magnetic fields, but also to temperature and pressure changes which we relate to crystal lattice parameters. We show that spin-rich hBN films are potentially applicable as intrinsic sensors in heterostructures made of functionalized 2D materials.
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Affiliation(s)
- Andreas Gottscholl
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, Würzburg, Germany
| | - Matthias Diez
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, Würzburg, Germany
| | - Victor Soltamov
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, Würzburg, Germany
- Ioffe Institute, St. Petersburg, Russia
| | - Christian Kasper
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, Würzburg, Germany
| | - Dominik Krauße
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, Würzburg, Germany
| | - Andreas Sperlich
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, Würzburg, Germany
| | - Mehran Kianinia
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, Australia
- Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, NSW, Australia
| | - Carlo Bradac
- Department of Physics & Astronomy, Trent University, Peterborough, ON, Canada
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, Australia
- Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, NSW, Australia
| | - Vladimir Dyakonov
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, Würzburg, Germany.
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10
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Robust coherent control of solid-state spin qubits using anti-Stokes excitation. Nat Commun 2021; 12:3223. [PMID: 34050146 PMCID: PMC8163787 DOI: 10.1038/s41467-021-23471-8] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/28/2020] [Accepted: 04/30/2021] [Indexed: 11/08/2022] Open
Abstract
Optically addressable solid-state color center spin qubits have become important platforms for quantum information processing, quantum networks and quantum sensing. The readout of color center spin states with optically detected magnetic resonance (ODMR) technology is traditionally based on Stokes excitation, where the energy of the exciting laser is higher than that of the emission photons. Here, we investigate an unconventional approach using anti-Stokes excitation to detect the ODMR signal of silicon vacancy defect spin in silicon carbide, where the exciting laser has lower energy than the emitted photons. Laser power, microwave power and temperature dependence of the anti-Stokes excited ODMR are systematically studied, in which the behavior of ODMR contrast and linewidth is shown to be similar to that of Stokes excitation. However, the ODMR contrast is several times that of the Stokes excitation. Coherent control of silicon vacancy spin under anti-Stokes excitation is then realized at room temperature. The spin coherence properties are the same as those of Stokes excitation, but with a signal contrast that is around three times greater. To illustrate the enhanced spin readout contrast under anti-Stokes excitation, we also provide a theoretical model. The experiments demonstrate that the current anti-Stokes excitation ODMR approach has promising applications in quantum information processing and quantum sensing. Optically detected magnetic resonance of defect spins typically relies on Stokes excitation, in which the excitation energy is larger than that of the emitted photon. Here, the authors use the opposite regime of anti-Stokes excitation to detect Si vacancy spins in SiC, with a threefold improvement in signal contrast.
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11
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Murzakhanov FF, Yavkin BV, Mamin GV, Orlinskii SB, Mumdzhi IE, Gracheva IN, Gabbasov BF, Smirnov AN, Davydov VY, Soltamov VA. Creation of Negatively Charged Boron Vacancies in Hexagonal Boron Nitride Crystal by Electron Irradiation and Mechanism of Inhomogeneous Broadening of Boron Vacancy-Related Spin Resonance Lines. NANOMATERIALS 2021; 11:nano11061373. [PMID: 34067260 PMCID: PMC8224795 DOI: 10.3390/nano11061373] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/23/2021] [Revised: 05/18/2021] [Accepted: 05/19/2021] [Indexed: 11/16/2022]
Abstract
Optically addressable high-spin states (S ≥ 1) of defects in semiconductors are the basis for the development of solid-state quantum technologies. Recently, one such defect has been found in hexagonal boron nitride (hBN) and identified as a negatively charged boron vacancy (VB−). To explore and utilize the properties of this defect, one needs to design a robust way for its creation in an hBN crystal. We investigate the possibility of creating VB− centers in an hBN single crystal by means of irradiation with a high-energy (E = 2 MeV) electron flux. Optical excitation of the irradiated sample induces fluorescence in the near-infrared range together with the electron spin resonance (ESR) spectrum of the triplet centers with a zero-field splitting value of D = 3.6 GHz, manifesting an optically induced population inversion of the ground state spin sublevels. These observations are the signatures of the VB− centers and demonstrate that electron irradiation can be reliably used to create these centers in hBN. Exploration of the VB− spin resonance line shape allowed us to establish the source of the line broadening, which occurs due to the slight deviation in orientation of the two-dimensional B-N atomic plains being exactly parallel relative to each other. The results of the analysis of the broadening mechanism can be used for the crystalline quality control of the 2D materials, using the VB− spin embedded in the hBN as a probe.
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Affiliation(s)
- Fadis F. Murzakhanov
- Institute of Physics, Kazan Federal University, Kremlevskaya 18, 420008 Kazan, Russia; (F.F.M.); (B.V.Y.); (G.V.M.); (S.B.O.); (I.E.M.); (I.N.G.); (B.F.G.)
| | - Boris V. Yavkin
- Institute of Physics, Kazan Federal University, Kremlevskaya 18, 420008 Kazan, Russia; (F.F.M.); (B.V.Y.); (G.V.M.); (S.B.O.); (I.E.M.); (I.N.G.); (B.F.G.)
| | - Georgiy V. Mamin
- Institute of Physics, Kazan Federal University, Kremlevskaya 18, 420008 Kazan, Russia; (F.F.M.); (B.V.Y.); (G.V.M.); (S.B.O.); (I.E.M.); (I.N.G.); (B.F.G.)
| | - Sergei B. Orlinskii
- Institute of Physics, Kazan Federal University, Kremlevskaya 18, 420008 Kazan, Russia; (F.F.M.); (B.V.Y.); (G.V.M.); (S.B.O.); (I.E.M.); (I.N.G.); (B.F.G.)
| | - Ivan E. Mumdzhi
- Institute of Physics, Kazan Federal University, Kremlevskaya 18, 420008 Kazan, Russia; (F.F.M.); (B.V.Y.); (G.V.M.); (S.B.O.); (I.E.M.); (I.N.G.); (B.F.G.)
| | - Irina N. Gracheva
- Institute of Physics, Kazan Federal University, Kremlevskaya 18, 420008 Kazan, Russia; (F.F.M.); (B.V.Y.); (G.V.M.); (S.B.O.); (I.E.M.); (I.N.G.); (B.F.G.)
| | - Bulat F. Gabbasov
- Institute of Physics, Kazan Federal University, Kremlevskaya 18, 420008 Kazan, Russia; (F.F.M.); (B.V.Y.); (G.V.M.); (S.B.O.); (I.E.M.); (I.N.G.); (B.F.G.)
| | - Alexander N. Smirnov
- Division of Solid State Physics, Ioffe Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia; (A.N.S.); (V.Y.D.)
| | - Valery Yu. Davydov
- Division of Solid State Physics, Ioffe Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia; (A.N.S.); (V.Y.D.)
| | - Victor A. Soltamov
- Institute of Physics, Kazan Federal University, Kremlevskaya 18, 420008 Kazan, Russia; (F.F.M.); (B.V.Y.); (G.V.M.); (S.B.O.); (I.E.M.); (I.N.G.); (B.F.G.)
- Correspondence: or ; Tel.: +7-8432-926-480
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12
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Craigie K, Gauger EM, Altmann Y, Bonato C. Resource-efficient adaptive Bayesian tracking of magnetic fields with a quantum sensor. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:195801. [PMID: 33540392 DOI: 10.1088/1361-648x/abe34f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2020] [Accepted: 02/04/2021] [Indexed: 06/12/2023]
Abstract
Single-spin quantum sensors, for example based on nitrogen-vacancy centres in diamond, provide nanoscale mapping of magnetic fields. In applications where the magnetic field may be changing rapidly, total sensing time is crucial and must be minimised. Bayesian estimation and adaptive experiment optimisation can speed up the sensing process by reducing the number of measurements required. These protocols consist of computing and updating the probability distribution of the magnetic field based on measurement outcomes and of determining optimized acquisition settings for the next measurement. However, the computational steps feeding into the measurement settings of the next iteration must be performed quickly enough to allow real-time updates. This article addresses the issue of computational speed by implementing an approximate Bayesian estimation technique, where probability distributions are approximated by a finite sum of Gaussian functions. Given that only three parameters are required to fully describe a Gaussian density, we find that in many cases, the magnetic field probability distribution can be described by fewer than ten parameters, achieving a reduction in computation time by factor 10 compared to existing approaches. ForT2*=1μs, only a small decrease in computation time is achieved. However, in these regimes, the proposed Gaussian protocol outperforms the existing one in tracking accuracy.
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Affiliation(s)
- K Craigie
- School of Engineering and Physical Sciences, SUPA, Heriot-Watt University, Edinburgh, EH14 4AS, United Kingdom
| | - E M Gauger
- School of Engineering and Physical Sciences, SUPA, Heriot-Watt University, Edinburgh, EH14 4AS, United Kingdom
| | - Y Altmann
- School of Engineering and Physical Sciences, SUPA, Heriot-Watt University, Edinburgh, EH14 4AS, United Kingdom
| | - C Bonato
- School of Engineering and Physical Sciences, SUPA, Heriot-Watt University, Edinburgh, EH14 4AS, United Kingdom
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13
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Pavunny SP, Yeats AL, Banks HB, Bielejec E, Myers-Ward RL, DeJarld MT, Bracker AS, Gaskill DK, Carter SG. Arrays of Si vacancies in 4H-SiC produced by focused Li ion beam implantation. Sci Rep 2021; 11:3561. [PMID: 33574463 PMCID: PMC7878855 DOI: 10.1038/s41598-021-82832-x] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/06/2020] [Accepted: 12/28/2020] [Indexed: 11/24/2022] Open
Abstract
Point defects in SiC are an attractive platform for quantum information and sensing applications because they provide relatively long spin coherence times, optical spin initialization, and spin-dependent fluorescence readout in a fabrication-friendly semiconductor. The ability to precisely place these defects at the optimal location in a host material with nano-scale accuracy is desirable for integration of these quantum systems with traditional electronic and photonic structures. Here, we demonstrate the precise spatial patterning of arrays of silicon vacancy (\documentclass[12pt]{minimal}
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\begin{document}$${V}_{Si}$$\end{document}VSi) emitters in an epitaxial 4H-SiC (0001) layer through mask-less focused ion beam implantation of Li+. We characterize these arrays with high-resolution scanning confocal fluorescence microscopy on the Si-face, observing sharp emission lines primarily coming from the \documentclass[12pt]{minimal}
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\begin{document}$${V1}^{{\prime}}$$\end{document}V1′ zero-phonon line (ZPL). The implantation dose is varied over 3 orders of magnitude, leading to \documentclass[12pt]{minimal}
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\begin{document}$${V}_{Si}$$\end{document}VSi densities from a few per implantation spot to thousands per spot, with a linear dependence between ZPL emission and implantation dose. Optically-detected magnetic resonance (ODMR) is also performed, confirming the presence of V2 \documentclass[12pt]{minimal}
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\begin{document}$${V}_{Si}$$\end{document}VSi. Our investigation reveals scalable and reproducible defect generation.
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Affiliation(s)
- Shojan P Pavunny
- U. S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC, 20375, USA.
| | - Andrew L Yeats
- U. S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC, 20375, USA
| | - Hunter B Banks
- U. S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC, 20375, USA
| | | | - Rachael L Myers-Ward
- U. S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC, 20375, USA
| | - Matthew T DeJarld
- U. S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC, 20375, USA
| | - Allan S Bracker
- U. S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC, 20375, USA
| | - D Kurt Gaskill
- U. S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC, 20375, USA.,Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD, 20742, USA
| | - Samuel G Carter
- U. S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC, 20375, USA.
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14
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Nagasawa F, Takamura M, Sekiguchi H, Miyamae Y, Oku Y, Nakahara K. Prominent luminescence of silicon-vacancy defects created in bulk silicon carbide p-n junction diodes. Sci Rep 2021; 11:1497. [PMID: 33452427 PMCID: PMC7810994 DOI: 10.1038/s41598-021-81116-8] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/24/2020] [Accepted: 12/31/2020] [Indexed: 11/29/2022] Open
Abstract
We investigate fluorescent defect centers in 4H silicon carbide p–n junction diodes fabricated via aluminum-ion implantation into an n-type bulk substrate without the use of an epitaxial growth process. At room temperature, electron-irradiated p–n junction diodes exhibit electroluminescence originating from silicon-vacancy defects. For a diode exposed to an electron dose of \documentclass[12pt]{minimal}
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\begin{document}$$1 \times 10^{18}\,{{\mathrm{cm}}}^{-2}$$\end{document}1×1018cm-2 at \documentclass[12pt]{minimal}
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\begin{document}$$800\,{{\mathrm{keV}}}$$\end{document}800keV, the electroluminescence intensity of these defects is most prominent within a wavelength range of 400–\documentclass[12pt]{minimal}
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\begin{document}$$1100\,{{\mathrm{nm}}}$$\end{document}1100nm. The commonly observed \documentclass[12pt]{minimal}
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\begin{document}$${{\mathrm{D}}}_1$$\end{document}D1 emission was sufficiently suppressed in the electroluminescence spectra of all the fabricated diodes, while it was detected in the photoluminescence measurements. The photoluminescence spectra also displayed emission lines from silicon-vacancy defects.
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Affiliation(s)
- Fumiya Nagasawa
- Rohm Research and Development Center, ROHM Co., Ltd., Kyoto, Japan.
| | - Makoto Takamura
- Rohm Research and Development Center, ROHM Co., Ltd., Kyoto, Japan
| | | | | | - Yoshiaki Oku
- Rohm Research and Development Center, ROHM Co., Ltd., Kyoto, Japan
| | - Ken Nakahara
- Rohm Research and Development Center, ROHM Co., Ltd., Kyoto, Japan
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15
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Vásquez GC, Bathen ME, Galeckas A, Bazioti C, Johansen KM, Maestre D, Cremades A, Prytz Ø, Moe AM, Kuznetsov AY, Vines L. Strain Modulation of Si Vacancy Emission from SiC Micro- and Nanoparticles. NANO LETTERS 2020; 20:8689-8695. [PMID: 33175553 PMCID: PMC7735738 DOI: 10.1021/acs.nanolett.0c03472] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/27/2020] [Revised: 11/05/2020] [Indexed: 06/11/2023]
Abstract
Single-photon emitting point defects in semiconductors have emerged as strong candidates for future quantum technology devices. In the present work, we exploit crystalline particles to investigate relevant defect localizations, emission shifting, and waveguiding. Specifically, emission from 6H-SiC micro- and nanoparticles ranging from 100 nm to 5 μm in size is collected using cathodoluminescence (CL), and we monitor signals attributed to the Si vacancy (VSi) as a function of its location. Clear shifts in the emission wavelength are found for emitters localized in the particle center and at the edges. By comparing spatial CL maps with strain analysis carried out in transmission electron microscopy, we attribute the emission shifts to compressive strain of 2-3% along the particle a-direction. Thus, embedding VSi qubit defects within SiC nanoparticles offers an interesting and versatile opportunity to tune single-photon emission energies while simultaneously ensuring ease of addressability via a self-assembled SiC nanoparticle matrix.
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Affiliation(s)
- G. C. Vásquez
- Centre
for Materials Science and Nanotechnology, University of Oslo, N-0318 Oslo, Norway
| | - M. E. Bathen
- Centre
for Materials Science and Nanotechnology, University of Oslo, N-0318 Oslo, Norway
| | - A. Galeckas
- Centre
for Materials Science and Nanotechnology, University of Oslo, N-0318 Oslo, Norway
| | - C. Bazioti
- Centre
for Materials Science and Nanotechnology, University of Oslo, N-0318 Oslo, Norway
| | - K. M. Johansen
- Centre
for Materials Science and Nanotechnology, University of Oslo, N-0318 Oslo, Norway
| | - D. Maestre
- Departamento
de Física de Materiales, Facultad de CC. Físicas, Universidad Complutense de Madrid, 28040 Madrid, Spain
| | - A. Cremades
- Departamento
de Física de Materiales, Facultad de CC. Físicas, Universidad Complutense de Madrid, 28040 Madrid, Spain
| | - Ø. Prytz
- Centre
for Materials Science and Nanotechnology, University of Oslo, N-0318 Oslo, Norway
| | - A. M. Moe
- Washington
Mills AS, NO-7300 Orkanger, Norway
| | - A. Yu. Kuznetsov
- Centre
for Materials Science and Nanotechnology, University of Oslo, N-0318 Oslo, Norway
| | - L. Vines
- Centre
for Materials Science and Nanotechnology, University of Oslo, N-0318 Oslo, Norway
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16
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17
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Hernández-Mínguez A, Poshakinskiy AV, Hollenbach M, Santos PV, Astakhov GV. Anisotropic Spin-Acoustic Resonance in Silicon Carbide at Room Temperature. PHYSICAL REVIEW LETTERS 2020; 125:107702. [PMID: 32955339 DOI: 10.1103/physrevlett.125.107702] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/02/2020] [Revised: 06/30/2020] [Accepted: 08/06/2020] [Indexed: 06/11/2023]
Abstract
We report on acoustically driven spin resonances in atomic-scale centers in silicon carbide at room temperature. Specifically, we use a surface acoustic wave cavity to selectively address spin transitions with magnetic quantum number differences of ±1 and ±2 in the absence of external microwave electromagnetic fields. These spin-acoustic resonances reveal a nontrivial dependence on the static magnetic field orientation, which is attributed to the intrinsic symmetry of the acoustic fields combined with the peculiar properties of a half-integer spin system. We develop a microscopic model of the spin-acoustic interaction, which describes our experimental data without fitting parameters. Furthermore, we predict that traveling surface waves lead to a chiral spin-acoustic resonance that changes upon magnetic field inversion. These results establish silicon carbide as a highly promising hybrid platform for on-chip spin-optomechanical quantum control enabling engineered interactions at room temperature.
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Affiliation(s)
- A Hernández-Mínguez
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - A V Poshakinskiy
- Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
| | - M Hollenbach
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
- Technische Universität Dresden, 01062 Dresden, Germany
| | - P V Santos
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - G V Astakhov
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
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18
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Bishop SG, Hadden JP, Alzahrani FD, Hekmati R, Huffaker DL, Langbein WW, Bennett AJ. Room-Temperature Quantum Emitter in Aluminum Nitride. ACS PHOTONICS 2020; 7:1636-1641. [PMID: 32905301 PMCID: PMC7469133 DOI: 10.1021/acsphotonics.0c00528] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/02/2020] [Indexed: 06/01/2023]
Abstract
A device that is able to produce single photons is a fundamental building block for a number of quantum technologies. Significant progress has been made in engineering quantum emission in the solid state, for instance, using semiconductor quantum dots as well as defect sites in bulk and two-dimensional materials. Here we report the discovery of a room-temperature quantum emitter embedded deep within the band gap of aluminum nitride. Using spectral, polarization, and photon-counting time-resolved measurements we demonstrate bright (>105 counts s-1), pure (g (2)(0) < 0.2), and polarized room-temperature quantum light emission from color centers in this commercially important semiconductor.
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Affiliation(s)
- Sam G. Bishop
- School of Engineering and School of Physics and Astronomy, Cardiff University, Queen’s Building, The Parade, Cardiff, CF24 3AA, United Kingdom
| | - John P. Hadden
- School of Engineering and School of Physics and Astronomy, Cardiff University, Queen’s Building, The Parade, Cardiff, CF24 3AA, United Kingdom
| | - Faris D. Alzahrani
- School of Engineering and School of Physics and Astronomy, Cardiff University, Queen’s Building, The Parade, Cardiff, CF24 3AA, United Kingdom
| | - Reza Hekmati
- School of Engineering and School of Physics and Astronomy, Cardiff University, Queen’s Building, The Parade, Cardiff, CF24 3AA, United Kingdom
| | - Diana L. Huffaker
- School of Engineering and School of Physics and Astronomy, Cardiff University, Queen’s Building, The Parade, Cardiff, CF24 3AA, United Kingdom
| | - Wolfgang W. Langbein
- School of Engineering and School of Physics and Astronomy, Cardiff University, Queen’s Building, The Parade, Cardiff, CF24 3AA, United Kingdom
| | - Anthony J. Bennett
- School of Engineering and School of Physics and Astronomy, Cardiff University, Queen’s Building, The Parade, Cardiff, CF24 3AA, United Kingdom
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19
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Morioka N, Babin C, Nagy R, Gediz I, Hesselmeier E, Liu D, Joliffe M, Niethammer M, Dasari D, Vorobyov V, Kolesov R, Stöhr R, Ul-Hassan J, Son NT, Ohshima T, Udvarhelyi P, Thiering G, Gali A, Wrachtrup J, Kaiser F. Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide. Nat Commun 2020; 11:2516. [PMID: 32433556 PMCID: PMC7239935 DOI: 10.1038/s41467-020-16330-5] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2020] [Accepted: 04/28/2020] [Indexed: 12/02/2022] Open
Abstract
Quantum systems combining indistinguishable photon generation and spin-based quantum information processing are essential for remote quantum applications and networking. However, identification of suitable systems in scalable platforms remains a challenge. Here, we investigate the silicon vacancy centre in silicon carbide and demonstrate controlled emission of indistinguishable and distinguishable photons via coherent spin manipulation. Using strong off-resonant excitation and collecting zero-phonon line photons, we show a two-photon interference contrast close to 90% in Hong-Ou-Mandel type experiments. Further, we exploit the system’s intimate spin-photon relation to spin-control the colour and indistinguishability of consecutively emitted photons. Our results provide a deep insight into the system’s spin-phonon-photon physics and underline the potential of the industrially compatible silicon carbide platform for measurement-based entanglement distribution and photonic cluster state generation. Additional coupling to quantum registers based on individual nuclear spins would further allow for high-level network-relevant quantum information processing, such as error correction and entanglement purification. Defects in silicon carbide can act as single photon sources that also have the benefit of a host material that is already used in electronic devices. Here the authors demonstrate that they can control the distinguishability of the emitted photons by changing the defect spin state.
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Affiliation(s)
- Naoya Morioka
- 3rd Institute of Physics, University of Stuttgart and Institute for Quantum Science and Technology IQST, 70569, Stuttgart, Germany. .,Advanced Research and Innovation Center, DENSO CORPORATION, Nisshin, 470-0111, Japan.
| | - Charles Babin
- 3rd Institute of Physics, University of Stuttgart and Institute for Quantum Science and Technology IQST, 70569, Stuttgart, Germany
| | - Roland Nagy
- 3rd Institute of Physics, University of Stuttgart and Institute for Quantum Science and Technology IQST, 70569, Stuttgart, Germany
| | - Izel Gediz
- 3rd Institute of Physics, University of Stuttgart and Institute for Quantum Science and Technology IQST, 70569, Stuttgart, Germany
| | - Erik Hesselmeier
- 3rd Institute of Physics, University of Stuttgart and Institute for Quantum Science and Technology IQST, 70569, Stuttgart, Germany
| | - Di Liu
- 3rd Institute of Physics, University of Stuttgart and Institute for Quantum Science and Technology IQST, 70569, Stuttgart, Germany
| | - Matthew Joliffe
- 3rd Institute of Physics, University of Stuttgart and Institute for Quantum Science and Technology IQST, 70569, Stuttgart, Germany
| | - Matthias Niethammer
- 3rd Institute of Physics, University of Stuttgart and Institute for Quantum Science and Technology IQST, 70569, Stuttgart, Germany
| | - Durga Dasari
- 3rd Institute of Physics, University of Stuttgart and Institute for Quantum Science and Technology IQST, 70569, Stuttgart, Germany
| | - Vadim Vorobyov
- 3rd Institute of Physics, University of Stuttgart and Institute for Quantum Science and Technology IQST, 70569, Stuttgart, Germany
| | - Roman Kolesov
- 3rd Institute of Physics, University of Stuttgart and Institute for Quantum Science and Technology IQST, 70569, Stuttgart, Germany
| | - Rainer Stöhr
- 3rd Institute of Physics, University of Stuttgart and Institute for Quantum Science and Technology IQST, 70569, Stuttgart, Germany
| | - Jawad Ul-Hassan
- Department of Physics, Chemistry and Biology, Linköping University, SE-58183, Linköping, Sweden
| | - Nguyen Tien Son
- Department of Physics, Chemistry and Biology, Linköping University, SE-58183, Linköping, Sweden
| | - Takeshi Ohshima
- National Institutes for Quantum and Radiological Science and Technology, Takasaki, 370-1292, Japan
| | - Péter Udvarhelyi
- Department of Biological Physics, Eötvös University, Pázmány Péter sétány 1/A, 1117, Budapest, Hungary.,Wigner Research Centre for Physics, P.O. Box 49, 1525, Budapest, Hungary.,Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8., 1111, Budapest, Hungary
| | - Gergő Thiering
- Wigner Research Centre for Physics, P.O. Box 49, 1525, Budapest, Hungary
| | - Adam Gali
- Wigner Research Centre for Physics, P.O. Box 49, 1525, Budapest, Hungary.,Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8., 1111, Budapest, Hungary
| | - Jörg Wrachtrup
- 3rd Institute of Physics, University of Stuttgart and Institute for Quantum Science and Technology IQST, 70569, Stuttgart, Germany
| | - Florian Kaiser
- 3rd Institute of Physics, University of Stuttgart and Institute for Quantum Science and Technology IQST, 70569, Stuttgart, Germany.
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20
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Castelletto S, Al Atem AS, Inam FA, von Bardeleben HJ, Hameau S, Almutairi AF, Guillot G, Sato SI, Boretti A, Bluet JM. Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2019; 10:2383-2395. [PMID: 31886115 PMCID: PMC6902882 DOI: 10.3762/bjnano.10.229] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/21/2019] [Accepted: 11/20/2019] [Indexed: 05/24/2023]
Abstract
We report the enhancement of the optical emission between 850 and 1400 nm of an ensemble of silicon mono-vacancies (VSi), silicon and carbon divacancies (VCVSi), and nitrogen vacancies (NCVSi) in an n-type 4H-SiC array of micropillars. The micropillars have a length of ca. 4.5 μm and a diameter of ca. 740 nm, and were implanted with H+ ions to produce an ensemble of color centers at a depth of approximately 2 μm. The samples were in part annealed at different temperatures (750 and 900 °C) to selectively produce distinct color centers. For all these color centers we saw an enhancement of the photostable fluorescence emission of at least a factor of 6 using micro-photoluminescence systems. Using custom confocal microscopy setups, we characterized the emission of VSi measuring an enhancement by up to a factor of 20, and of NCVSi with an enhancement up to a factor of 7. The experimental results are supported by finite element method simulations. Our study provides the pathway for device design and fabrication with an integrated ultra-bright ensemble of VSi and NCVSi for in vivo imaging and sensing in the infrared.
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Affiliation(s)
| | | | - Faraz Ahmed Inam
- Dept. of Physics, Aligarh Muslim University, Aligarh, U.P. 202002, India
| | - Hans Jürgen von Bardeleben
- Sorbonne Université, Campus Pierre et Marie Curie, Institut des Nanosciences de Paris, 4, place Jussieu, 75005 Paris, France
| | - Sophie Hameau
- Sorbonne Université, Campus Pierre et Marie Curie, Institut des Nanosciences de Paris, 4, place Jussieu, 75005 Paris, France
| | | | - Gérard Guillot
- Univ Lyon, INSA Lyon, CNRS, INL, UMR5270, F-69621 Villeurbanne, France
| | - Shin-ichiro Sato
- National Institutes for Quantum and Radiological Science and Technology, Takasaki, Gunma, 370-1292, Japan
| | - Alberto Boretti
- Department of Mechanical Engineering, College of Engineering, Prince Mohammad Bin Fahd University, Al Khobar, 34754, Saudi Arabia
- Faculty of Applied Sciences, Ton Duc Thang University, Ho Chi Minh City, 758307, Vietnam
| | - Jean Marie Bluet
- Univ Lyon, INSA Lyon, CNRS, INL, UMR5270, F-69621 Villeurbanne, France
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21
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Li Q, Wang JF, Yan FF, Cheng ZD, Liu ZH, Zhou K, Guo LP, Zhou X, Zhang WP, Wang XX, Huang W, Xu JS, Li CF, Guo GC. Nanoscale depth control of implanted shallow silicon vacancies in silicon carbide. NANOSCALE 2019; 11:20554-20561. [PMID: 31432857 DOI: 10.1039/c9nr05938e] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Color centers in silicon carbide have recently attracted broad interest as high bright single photon sources and defect spins with long coherence time at room temperature. There have been several methods to generate silicon vacancy defects with excellent spin properties in silicon carbide, such as electron irradiation and ion implantation. However, little is known about the depth distribution and nanoscale depth control of the shallow defects. Here, a method is presented to precisely control the depths of the ion implantation induced shallow silicon vacancy defects in silicon carbide by using reactive ion etching with little surface damage. After optimizing the major etching parameters, a slow and stable etching rate of about 5.5 ± 0.5 nm min-1 can be obtained. By successive nanoscale plasma etching, the shallow defects are brought close to the surface step by step. The photoluminescence spectrum and optically detected magnetic resonance spectra are measured, which confirm that there were no plasma-induced optical and spin property changes of the defects. By tracing the mean counts of the remaining defects after each etching process, the depth distribution of the defects can be obtained for various implantation conditions. Moreover, the spin coherence time T2* of the generated VSi defects is detected at different etch depths, which greatly decreases when the depth is less than 25 nm. The method of nanoscale depth control of silicon vacancies would pave the way for investigating the surface spin properties and the applications in nanoscale sensing and quantum photonics.
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Affiliation(s)
- Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China. and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Jun-Feng Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China. and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Fei-Fei Yan
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China. and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Ze-Di Cheng
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China. and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Zheng-Hao Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China. and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Kun Zhou
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China. and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Li-Ping Guo
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, People's Republic of China
| | - Xiong Zhou
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, People's Republic of China
| | - Wei-Ping Zhang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, People's Republic of China
| | - Xiu-Xia Wang
- Center for Micro- and Nanoscale Research and Fabrication, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Wei Huang
- Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China. and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China. and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China. and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
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22
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Son NT, Stenberg P, Jokubavicius V, Ohshima T, Ul Hassan J, Ivanov IG. Ligand hyperfine interactions at silicon vacancies in 4H-SiC. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:195501. [PMID: 30763923 DOI: 10.1088/1361-648x/ab072b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The negative silicon vacancy ([Formula: see text]) in SiC has recently emerged as a promising defect for quantum communication and room-temperature quantum sensing. However, its electronic structure is still not well characterized. While the isolated Si vacancy is expected to give rise to only two paramagnetic centers corresponding to two inequivalent lattice sites in 4H-SiC, there have been five electron paramagnetic resonance (EPR) centers assigned to [Formula: see text] in the past: the so-called isolated no-zero-field splitting (ZFS) [Formula: see text] center and another four axial configurations with small ZFS: T V1a, T V2a, T V1b, and T V2b. Due to overlapping with 29Si hyperfine (hf) structures in EPR spectra of natural 4H-SiC, hf parameters of T V1a have not been determined. Using isotopically enriched 4H-28SiC, we overcome the problems of signal overlapping and observe hf parameters of nearest C neighbors for all three components of the S = 3/2 T V1a and T V2a centers. The obtained EPR data support the conclusion that only T V1a and T V2a are related to [Formula: see text] and the two configurations of the so-called isolated no-ZFS [Formula: see text] center, [Formula: see text] (I) and [Formula: see text] (II), are actually the central lines corresponding to the transition |-1/2〉 ↔ |+1/2〉 of the T V2a and T V1a centers, respectively.
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Affiliation(s)
- Nguyen Tien Son
- Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden
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23
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Soltamov VA, Kasper C, Poshakinskiy AV, Anisimov AN, Mokhov EN, Sperlich A, Tarasenko SA, Baranov PG, Astakhov GV, Dyakonov V. Excitation and coherent control of spin qudit modes in silicon carbide at room temperature. Nat Commun 2019; 10:1678. [PMID: 30975985 PMCID: PMC6459825 DOI: 10.1038/s41467-019-09429-x] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/14/2018] [Accepted: 03/06/2019] [Indexed: 12/01/2022] Open
Abstract
One of the challenges in the field of quantum sensing and information processing is to selectively address and coherently manipulate highly homogeneous qubits subject to external perturbations. Here, we present room-temperature coherent control of high-dimensional quantum bits, the so-called qudits, associated with vacancy-related spins in silicon carbide enriched with nuclear spin-free isotopes. In addition to the excitation of a spectrally narrow qudit mode at the pump frequency, several other modes are excited in the electron spin resonance spectra whose relative positions depend on the external magnetic field. We develop a theory of multipole spin dynamics and demonstrate selective quantum control of homogeneous spin packets with sub-MHz spectral resolution. Furthermore, we perform two-frequency Ramsey interferometry to demonstrate absolute dc magnetometry, which is immune to thermal noise and strain inhomogeneity. High-dimensional quantum bits advance the application of quantum sensing and information processing technologies but suffer from the low spectral selectivity and working temperature. Here the authors present the selective excitation and control of spin qudits modes based on an ensemble of silicon vacancy defects in silicon carbide at room temperature.
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Affiliation(s)
- V A Soltamov
- Ioffe Institute, St. Petersburg, 194021, Russia.,Experimental Physics VI, Julius-Maximilian University of Würzburg, Würzburg, 97074, Germany
| | - C Kasper
- Experimental Physics VI, Julius-Maximilian University of Würzburg, Würzburg, 97074, Germany
| | | | | | - E N Mokhov
- Ioffe Institute, St. Petersburg, 194021, Russia.,National Research University of Information Technologies, Mechanics and Optics, St. Petersburg, 197101, Russia
| | - A Sperlich
- Experimental Physics VI, Julius-Maximilian University of Würzburg, Würzburg, 97074, Germany
| | | | - P G Baranov
- Ioffe Institute, St. Petersburg, 194021, Russia.,Peter the Great St. Petersburg Polytechnic University, St. Petersburg, 195251, Russia
| | - G V Astakhov
- Ioffe Institute, St. Petersburg, 194021, Russia. .,Experimental Physics VI, Julius-Maximilian University of Würzburg, Würzburg, 97074, Germany.
| | - V Dyakonov
- Experimental Physics VI, Julius-Maximilian University of Würzburg, Würzburg, 97074, Germany.
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24
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Kraus H, Simin D, Kasper C, Suda Y, Kawabata S, Kada W, Honda T, Hijikata Y, Ohshima T, Dyakonov V, Astakhov GV. Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide. NANO LETTERS 2017; 17:2865-2870. [PMID: 28350468 DOI: 10.1021/acs.nanolett.6b05395] [Citation(s) in RCA: 23] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Constructing quantum devices comprises various challenging tasks, especially when concerning their nanoscale geometry. For quantum color centers, the traditional approach is to fabricate the device structure after the nondeterministic placement of the centers. Reversing this approach, we present the controlled generation of quantum centers in silicon carbide (SiC) by focused proton beam in a noncomplex manner without need for pre- or postirradiation treatment. The generation depth and resolution can be predicted by matching the proton energy to the material's stopping power, and the amount of quantum centers at one specific sample volume is tunable from ensembles of millions to discernible single photon emitters. We identify the generated centers as silicon vacancies through their characteristic magnetic resonance signatures and demonstrate that they possess a long spin-echo coherence time of 42 ± 20 μs at room temperature. Our approach hence enables the fabrication of quantum hybrid nanodevices based on SiC platform, where spin centers are integrated into p-i-n diodes, photonic cavities, and mechanical resonators.
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Affiliation(s)
- H Kraus
- Experimental Physics VI, Julius Maximilian University of Würzburg , 97074 Würzburg, Germany
- National Institutes for Quantum and Radiological Science and Technology (QST) , Takasaki, Gunma 370-1292, Japan
| | - D Simin
- Experimental Physics VI, Julius Maximilian University of Würzburg , 97074 Würzburg, Germany
| | - C Kasper
- Experimental Physics VI, Julius Maximilian University of Würzburg , 97074 Würzburg, Germany
| | - Y Suda
- Faculty of Science and Technology, Gunma University , Kiryu, Gunma 376-8515, Japan
| | - S Kawabata
- Faculty of Science and Technology, Gunma University , Kiryu, Gunma 376-8515, Japan
| | - W Kada
- Faculty of Science and Technology, Gunma University , Kiryu, Gunma 376-8515, Japan
| | - T Honda
- National Institutes for Quantum and Radiological Science and Technology (QST) , Takasaki, Gunma 370-1292, Japan
- Graduate School of Science and Engineering, Saitama University , Saitama 338-8570, Japan
| | - Y Hijikata
- Graduate School of Science and Engineering, Saitama University , Saitama 338-8570, Japan
| | - T Ohshima
- National Institutes for Quantum and Radiological Science and Technology (QST) , Takasaki, Gunma 370-1292, Japan
| | - V Dyakonov
- Experimental Physics VI, Julius Maximilian University of Würzburg , 97074 Würzburg, Germany
- Bavarian Center for Applied Energy Research (ZAE Bayern) , 97074 Würzburg, Germany
| | - G V Astakhov
- Experimental Physics VI, Julius Maximilian University of Würzburg , 97074 Würzburg, Germany
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25
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Nanoscale Sensing Using Point Defects in Single-Crystal Diamond: Recent Progress on Nitrogen Vacancy Center-Based Sensors. CRYSTALS 2017. [DOI: 10.3390/cryst7050124] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Individual, luminescent point defects in solids, so-called color centers, are atomic-sized quantum systems enabling sensing and imaging with nanoscale spatial resolution. In this overview, we introduce nanoscale sensing based on individual nitrogen vacancy (NV) centers in diamond. We discuss two central challenges of the field: first, the creation of highly-coherent, shallow NV centers less than 10 nm below the surface of a single-crystal diamond; second, the fabrication of tip-like photonic nanostructures that enable efficient fluorescence collection and can be used for scanning probe imaging based on color centers with nanoscale resolution.
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26
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Radulaski M, Widmann M, Niethammer M, Zhang JL, Lee SY, Rendler T, Lagoudakis KG, Son NT, Janzén E, Ohshima T, Wrachtrup J, Vučković J. Scalable Quantum Photonics with Single Color Centers in Silicon Carbide. NANO LETTERS 2017; 17:1782-1786. [PMID: 28225630 DOI: 10.1021/acs.nanolett.6b05102] [Citation(s) in RCA: 31] [Impact Index Per Article: 3.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Silicon carbide is a promising platform for single photon sources, quantum bits (qubits), and nanoscale sensors based on individual color centers. Toward this goal, we develop a scalable array of nanopillars incorporating single silicon vacancy centers in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated with 2 MeV electron beams to create vacancies. Subsequent lithographic process forms 800 nm tall nanopillars with 400-1400 nm diameters. We obtain high collection efficiency of up to 22 kcounts/s optical saturation rates from a single silicon vacancy center while preserving the single photon emission and the optically induced electron-spin polarization properties. Our study demonstrates silicon carbide as a readily available platform for scalable quantum photonics architecture relying on single photon sources and qubits.
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Affiliation(s)
- Marina Radulaski
- E. L. Ginzton Laboratory, Stanford University , Stanford, California 94305, United States
| | - Matthias Widmann
- 3rd Institute of Physics, IQST, and Research Center SCOPE, University of Stuttgart , 70569 Stuttgart, Germany
| | - Matthias Niethammer
- 3rd Institute of Physics, IQST, and Research Center SCOPE, University of Stuttgart , 70569 Stuttgart, Germany
| | - Jingyuan Linda Zhang
- E. L. Ginzton Laboratory, Stanford University , Stanford, California 94305, United States
| | - Sang-Yun Lee
- 3rd Institute of Physics, IQST, and Research Center SCOPE, University of Stuttgart , 70569 Stuttgart, Germany
- Center for Quantum Information, Korea Institute of Science and Technology (KIST) , Seoul, 02792, Republic of Korea
| | - Torsten Rendler
- 3rd Institute of Physics, IQST, and Research Center SCOPE, University of Stuttgart , 70569 Stuttgart, Germany
| | | | - Nguyen Tien Son
- Department of Physics, Chemistry, and Biology, Linköping University , SE-58183 Linköping, Sweden
| | - Erik Janzén
- Department of Physics, Chemistry, and Biology, Linköping University , SE-58183 Linköping, Sweden
| | - Takeshi Ohshima
- National Institutes for Quantum and Radiological Science and Technology (QST) , Takasaki, Gunma 370-1292, Japan
| | - Jörg Wrachtrup
- 3rd Institute of Physics, IQST, and Research Center SCOPE, University of Stuttgart , 70569 Stuttgart, Germany
| | - Jelena Vučković
- E. L. Ginzton Laboratory, Stanford University , Stanford, California 94305, United States
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27
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Lohrmann A, Johnson BC, McCallum JC, Castelletto S. A review on single photon sources in silicon carbide. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2017; 80:034502. [PMID: 28139468 DOI: 10.1088/1361-6633/aa5171] [Citation(s) in RCA: 48] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
This paper summarizes key findings in single-photon generation from deep level defects in silicon carbide (SiC) and highlights the significance of these individually addressable centers for emerging quantum applications. Single photon emission from various defect centers in both bulk and nanostructured SiC are discussed as well as their formation and possible integration into optical and electrical devices. The related measurement protocols, the building blocks of quantum communication and computation network architectures in solid state systems, are also summarized. This includes experimental methodologies developed for spin control of different paramagnetic defects, including the measurement of spin coherence times. Well established doping, and micro- and nanofabrication procedures for SiC may allow the quantum properties of paramagnetic defects to be electrically and mechanically controlled efficiently. The integration of single defects into SiC devices is crucial for applications in quantum technologies and we will review progress in this direction.
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Affiliation(s)
- A Lohrmann
- School of Physics, The University of Melbourne, Victoria 3010, Australia
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28
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Iwasaki T, Naruki W, Tahara K, Makino T, Kato H, Ogura M, Takeuchi D, Yamasaki S, Hatano M. Direct Nanoscale Sensing of the Internal Electric Field in Operating Semiconductor Devices Using Single Electron Spins. ACS NANO 2017; 11:1238-1245. [PMID: 28112891 DOI: 10.1021/acsnano.6b04460] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The electric field inside semiconductor devices is a key physical parameter that determines the properties of the devices. However, techniques based on scanning probe microscopy are limited to sensing at the surface only. Here, we demonstrate the direct sensing of the internal electric field in diamond power devices using single nitrogen-vacancy (NV) centers. The NV center embedded inside the device acts as a nanoscale electric field sensor. We fabricated vertical diamond p-i-n diodes containing the single NV centers. By performing optically detected magnetic resonance measurements under reverse-biased conditions with an applied voltage of up to 150 V, we found a large splitting in the magnetic resonance frequencies. This indicated that the NV center senses the transverse electric field in the space-charge region formed in the i-layer. The experimentally obtained electric field values are in good agreement with those calculated by a device simulator. Furthermore, we demonstrate the sensing of the electric field in different directions by utilizing NV centers with different N-V axes. This direct and quantitative sensing method using an electron spin in a wide-band-gap material provides a way to monitor the electric field in operating semiconductor devices.
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Affiliation(s)
- Takayuki Iwasaki
- Department of Electrical and Electronic Engineering, Tokyo Institute of Technology , Meguro, Tokyo 152-8552, Japan
- CREST, Japan Science and Technology Agency , Chiyoda, Tokyo 102-0076, Japan
| | - Wataru Naruki
- Department of Electrical and Electronic Engineering, Tokyo Institute of Technology , Meguro, Tokyo 152-8552, Japan
| | - Kosuke Tahara
- Department of Electrical and Electronic Engineering, Tokyo Institute of Technology , Meguro, Tokyo 152-8552, Japan
- CREST, Japan Science and Technology Agency , Chiyoda, Tokyo 102-0076, Japan
| | - Toshiharu Makino
- CREST, Japan Science and Technology Agency , Chiyoda, Tokyo 102-0076, Japan
- Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology , Tsukuba, Ibaraki 305-8568, Japan
| | - Hiromitsu Kato
- CREST, Japan Science and Technology Agency , Chiyoda, Tokyo 102-0076, Japan
- Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology , Tsukuba, Ibaraki 305-8568, Japan
| | - Masahiko Ogura
- CREST, Japan Science and Technology Agency , Chiyoda, Tokyo 102-0076, Japan
- Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology , Tsukuba, Ibaraki 305-8568, Japan
| | - Daisuke Takeuchi
- CREST, Japan Science and Technology Agency , Chiyoda, Tokyo 102-0076, Japan
- Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology , Tsukuba, Ibaraki 305-8568, Japan
| | - Satoshi Yamasaki
- CREST, Japan Science and Technology Agency , Chiyoda, Tokyo 102-0076, Japan
- Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology , Tsukuba, Ibaraki 305-8568, Japan
| | - Mutsuko Hatano
- Department of Electrical and Electronic Engineering, Tokyo Institute of Technology , Meguro, Tokyo 152-8552, Japan
- CREST, Japan Science and Technology Agency , Chiyoda, Tokyo 102-0076, Japan
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29
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Vectorized magnetometer for space applications using electrical readout of atomic scale defects in silicon carbide. Sci Rep 2016; 6:37077. [PMID: 27892524 PMCID: PMC5125006 DOI: 10.1038/srep37077] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/15/2016] [Accepted: 10/24/2016] [Indexed: 11/08/2022] Open
Abstract
Magnetometers are essential for scientific investigation of planetary bodies and are therefore ubiquitous on missions in space. Fluxgate and optically pumped atomic gas based magnetometers are typically flown because of their proven performance, reliability, and ability to adhere to the strict requirements associated with space missions. However, their complexity, size, and cost prevent their applicability in smaller missions involving cubesats. Conventional solid-state based magnetometers pose a viable solution, though many are prone to radiation damage and plagued with temperature instabilities. In this work, we report on the development of a new self-calibrating, solid-state based magnetometer which measures magnetic field induced changes in current within a SiC pn junction caused by the interaction of external magnetic fields with the atomic scale defects intrinsic to the semiconductor. Unlike heritage designs, the magnetometer does not require inductive sensing elements, high frequency radio, and/or optical circuitry and can be made significantly more compact and lightweight, thus enabling missions leveraging swarms of cubesats capable of science returns not possible with a single large-scale satellite. Additionally, the robustness of the SiC semiconductor allows for operation in extreme conditions such as the hot Venusian surface and the high radiation environment of the Jovian system.
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30
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Quantum decoherence dynamics of divacancy spins in silicon carbide. Nat Commun 2016; 7:12935. [PMID: 27679936 PMCID: PMC5056425 DOI: 10.1038/ncomms12935] [Citation(s) in RCA: 43] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/27/2016] [Accepted: 08/17/2016] [Indexed: 11/08/2022] Open
Abstract
Long coherence times are key to the performance of quantum bits (qubits). Here, we experimentally and theoretically show that the Hahn-echo coherence time of electron spins associated with divacancy defects in 4H-SiC reaches 1.3 ms, one of the longest Hahn-echo coherence times of an electron spin in a naturally isotopic crystal. Using a first-principles microscopic quantum-bath model, we find that two factors determine the unusually robust coherence. First, in the presence of moderate magnetic fields (30 mT and above), the 29Si and 13C paramagnetic nuclear spin baths are decoupled. In addition, because SiC is a binary crystal, homo-nuclear spin pairs are both diluted and forbidden from forming strongly coupled, nearest-neighbour spin pairs. Longer neighbour distances result in fewer nuclear spin flip-flops, a less fluctuating intra-crystalline magnetic environment, and thus a longer coherence time. Our results point to polyatomic crystals as promising hosts for coherent qubits in the solid state.
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31
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Anisimov AN, Simin D, Soltamov VA, Lebedev SP, Baranov PG, Astakhov GV, Dyakonov V. Optical thermometry based on level anticrossing in silicon carbide. Sci Rep 2016; 6:33301. [PMID: 27624819 PMCID: PMC5022017 DOI: 10.1038/srep33301] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/06/2016] [Accepted: 08/24/2016] [Indexed: 12/03/2022] Open
Abstract
We report a giant thermal shift of 2.1 MHz/K related to the excited-state zero-field splitting in the silicon vacancy centers in 4H silicon carbide. It is obtained from the indirect observation of the optically detected magnetic resonance in the excited state using the ground state as an ancilla. Alternatively, relative variations of the zero-field splitting for small temperature differences can be detected without application of radiofrequency fields, by simply monitoring the photoluminescence intensity in the vicinity of the level anticrossing. This effect results in an all-optical thermometry technique with temperature sensitivity of 100 mK/Hz(1/2) for a detection volume of approximately 10(-6) mm(3). In contrast, the zero-field splitting in the ground state does not reveal detectable temperature shift. Using these properties, an integrated magnetic field and temperature sensor can be implemented on the same center.
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Affiliation(s)
- A. N. Anisimov
- Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia
| | - D. Simin
- Experimental Physics VI, Julius-Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - V. A. Soltamov
- Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia
| | - S. P. Lebedev
- Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia
- St. Petersburg National Research University of Information Technologies, Mechanics and Optics, 197101, St. Petersburg, Russia
| | - P. G. Baranov
- Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia
| | - G. V. Astakhov
- Experimental Physics VI, Julius-Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - V. Dyakonov
- Experimental Physics VI, Julius-Maximilian University of Würzburg, 97074 Würzburg, Germany
- Bavarian Center for Applied Energy Research (ZAE Bayern), 97074 Würzburg, Germany
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32
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33
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Soltamov VA, Yavkin BV, Tolmachev DO, Babunts RA, Badalyan AG, Davydov VY, Mokhov EN, Proskuryakov II, Orlinskii SB, Baranov PG. Optically Addressable Silicon Vacancy-Related Spin Centers in Rhombic Silicon Carbide with High Breakdown Characteristics and ENDOR Evidence of Their Structure. PHYSICAL REVIEW LETTERS 2015; 115:247602. [PMID: 26705655 DOI: 10.1103/physrevlett.115.247602] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2015] [Indexed: 06/05/2023]
Abstract
We discovered a family of uniaxially oriented silicon vacancy-related centers with S=3/2 in a rhombic 15R-SiC crystalline matrix. We demonstrate that these centers exhibit unique characteristics such as optical spin alignment up to the temperatures of 250°C. Thus, the range of robust optically addressable vacancy-related spin centers is extended to the wide class of rhombic SiC polytypes. To use these centers for quantum applications it is essential to know their structure. Using high frequency electron nuclear double resonance, we show that the centers are formed by negatively charged silicon vacancies V_{Si}^{-} in the paramagnetic state with S=3/2 that is noncovalently bonded to the neutral carbon vacancy V_{C}^{0} in the nonparamagnetic state, located on the adjacent site along the SiC symmetry c axis.
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Affiliation(s)
- V A Soltamov
- Ioffe Physical Technical Institute, St. Petersburg 194021, Russia
| | - B V Yavkin
- Kazan Federal University, Kazan 420008, Russia
| | - D O Tolmachev
- Ioffe Physical Technical Institute, St. Petersburg 194021, Russia
| | - R A Babunts
- Ioffe Physical Technical Institute, St. Petersburg 194021, Russia
| | - A G Badalyan
- Ioffe Physical Technical Institute, St. Petersburg 194021, Russia
| | - V Yu Davydov
- Ioffe Physical Technical Institute, St. Petersburg 194021, Russia
| | - E N Mokhov
- Ioffe Physical Technical Institute, St. Petersburg 194021, Russia
| | - I I Proskuryakov
- Institute of Basic Biological Problems RAS, Pushchino 142290, Russia
| | | | - P G Baranov
- Ioffe Physical Technical Institute, St. Petersburg 194021, Russia
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34
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Bracher DO, Hu EL. Fabrication of High-Q Nanobeam Photonic Crystals in Epitaxially Grown 4H-SiC. NANO LETTERS 2015; 15:6202-6207. [PMID: 26305122 DOI: 10.1021/acs.nanolett.5b02542] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Silicon carbide (SiC) is an intriguing material due to the presence of spin-active point defects in several polytypes, including 4H-SiC. For many quantum information and sensing applications involving such point defects, it is important to couple their emission to high quality optical cavities. Here we present the fabrication of 1D nanobeam photonic crystal cavities (PCC) in 4H-SiC using a dopant-selective etch to undercut a homoepitaxially grown epilayer of p-type 4H-SiC. These are the first PCCs demonstrated in 4H-SiC and show high quality factors (Q) of up to ∼7000 as well as low modal volumes of <0.5 (λ/n)(3). We take advantage of the high device yield of this fabrication method to characterize hundreds of devices and determine which PCC geometries are optimal. Additionally, we demonstrate two methods to tune the resonant wavelengths of the PCCs over 5 nm without significant degradation of the Q. Lastly, we characterize nanobeam PCCs coupled to luminescence from silicon vacancy point defects (V1, V2) in 4H-SiC. The fundamental modes of two such PCCs are tuned into spectral overlap with the zero phonon line (ZPL) of the V2 center, resulting in an intensity increase of up to 3-fold. These results are important steps on the path to developing 4H-SiC as a platform for quantum information and sensing.
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Affiliation(s)
- David O Bracher
- Department of Physics and ‡School of Engineering and Applied Sciences, Harvard University , Cambridge, Massachusetts 02138, United States
| | - Evelyn L Hu
- Department of Physics and ‡School of Engineering and Applied Sciences, Harvard University , Cambridge, Massachusetts 02138, United States
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35
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Fuchs F, Stender B, Trupke M, Simin D, Pflaum J, Dyakonov V, Astakhov GV. Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide. Nat Commun 2015; 6:7578. [PMID: 26151881 DOI: 10.1038/ncomms8578] [Citation(s) in RCA: 57] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/04/2014] [Accepted: 05/19/2015] [Indexed: 12/18/2022] Open
Abstract
Vacancy-related centres in silicon carbide are attracting growing attention because of their appealing optical and spin properties. These atomic-scale defects can be created using electron or neutron irradiation; however, their precise engineering has not been demonstrated yet. Here, silicon vacancies are generated in a nuclear reactor and their density is controlled over eight orders of magnitude within an accuracy down to a single vacancy level. An isolated silicon vacancy serves as a near-infrared photostable single-photon emitter, operating even at room temperature. The vacancy spins can be manipulated using an optically detected magnetic resonance technique, and we determine the transition rates and absorption cross-section, describing the intensity-dependent photophysics of these emitters. The on-demand engineering of optically active spins in technologically friendly materials is a crucial step toward implementation of both maser amplifiers, requiring high-density spin ensembles, and qubits based on single spins.
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Affiliation(s)
- F Fuchs
- Experimental Physics VI, Julius-Maximilian University of Würzburg, Würzburg 97074, Germany
| | - B Stender
- Experimental Physics VI, Julius-Maximilian University of Würzburg, Würzburg 97074, Germany
| | - M Trupke
- Vienna Center for Quantum Science and Technology, Atominstitut, TU Wien, Wien 1020, Austria
| | - D Simin
- Experimental Physics VI, Julius-Maximilian University of Würzburg, Würzburg 97074, Germany
| | - J Pflaum
- Experimental Physics VI, Julius-Maximilian University of Würzburg, Würzburg 97074, Germany.,Bavarian Center for Applied Energy Research (ZAE Bayern), Würzburg 97074, Germany
| | - V Dyakonov
- Experimental Physics VI, Julius-Maximilian University of Würzburg, Würzburg 97074, Germany.,Bavarian Center for Applied Energy Research (ZAE Bayern), Würzburg 97074, Germany
| | - G V Astakhov
- Experimental Physics VI, Julius-Maximilian University of Würzburg, Würzburg 97074, Germany
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Falk AL, Klimov PV, Ivády V, Szász K, Christle DJ, Koehl WF, Gali Á, Awschalom DD. Optical Polarization of Nuclear Spins in Silicon Carbide. PHYSICAL REVIEW LETTERS 2015. [PMID: 26197014 DOI: 10.1103/physrevlett.114.247603] [Citation(s) in RCA: 39] [Impact Index Per Article: 3.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Affiliation(s)
- Abram L Falk
- Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA
- IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA
| | - Paul V Klimov
- Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA
- Department of Physics, University of California, Santa Barbara, Santa Barbara, California 93106, USA
| | - Viktor Ivády
- Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, H-1525 Budapest, Hungary
- Department of Physics, Chemistry, and Biology, Linköping University, SE-581 83 Linköping, Sweden
| | - Krisztián Szász
- Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, H-1525 Budapest, Hungary
- Institute of Physics, Loránd Eötvös University, H-1117 Budapest, Hungary
| | - David J Christle
- Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA
- Department of Physics, University of California, Santa Barbara, Santa Barbara, California 93106, USA
| | - William F Koehl
- Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA
| | - Ádám Gali
- Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, H-1525 Budapest, Hungary
- Department of Atomic Physics, Budapest University of Technology and Economics, H-1111 Budapest, Hungary
| | - David D Awschalom
- Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA
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Zwier OV, O’Shea D, Onur AR, van der Wal CH. All-optical coherent population trapping with defect spin ensembles in silicon carbide. Sci Rep 2015; 5:10931. [PMID: 26047132 PMCID: PMC4456942 DOI: 10.1038/srep10931] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/02/2015] [Accepted: 04/28/2015] [Indexed: 11/09/2022] Open
Abstract
Divacancy defects in silicon carbide have long-lived electronic spin states and sharp optical transitions. Because of the various polytypes of SiC, hundreds of unique divacancies exist, many with spin properties comparable to the nitrogen-vacancy center in diamond. If ensembles of such spins can be all-optically manipulated, they make compelling candidate systems for quantum-enhanced memory, communication, and sensing applications. We report here direct all-optical addressing of basal plane-oriented divacancy spins in 4H-SiC. By means of magneto-spectroscopy, we fully identify the spin triplet structure of both the ground and the excited state, and use this for tuning of transition dipole moments between particular spin levels. We also identify a role for relaxation via intersystem crossing. Building on these results, we demonstrate coherent population trapping -a key effect for quantum state transfer between spins and photons- for divacancy sub-ensembles along particular crystal axes. These results, combined with the flexibility of SiC polytypes and device processing, put SiC at the forefront of quantum information science in the solid state.
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Affiliation(s)
- Olger V. Zwier
- Zernike Institute for Advanced Materials, University of Groningen, NL-9747AG Groningen, The Netherlands
| | - Danny O’Shea
- Zernike Institute for Advanced Materials, University of Groningen, NL-9747AG Groningen, The Netherlands
| | - Alexander R. Onur
- Zernike Institute for Advanced Materials, University of Groningen, NL-9747AG Groningen, The Netherlands
| | - Caspar H. van der Wal
- Zernike Institute for Advanced Materials, University of Groningen, NL-9747AG Groningen, The Netherlands
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