1
|
Koh YR, Cheng Z, Mamun A, Bin Hoque MS, Liu Z, Bai T, Hussain K, Liao ME, Li R, Gaskins JT, Giri A, Tomko J, Braun JL, Gaevski M, Lee E, Yates L, Goorsky MS, Luo T, Khan A, Graham S, Hopkins PE. Bulk-like Intrinsic Phonon Thermal Conductivity of Micrometer-Thick AlN Films. ACS APPLIED MATERIALS & INTERFACES 2020; 12:29443-29450. [PMID: 32491824 DOI: 10.1021/acsami.0c03978] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Aluminum nitride (AlN) has garnered much attention due to its intrinsically high thermal conductivity. However, engineering thin films of AlN with these high thermal conductivities can be challenging due to vacancies and defects that can form during the synthesis. In this work, we report on the cross-plane thermal conductivity of ultra-high-purity single-crystal AlN films with different thicknesses (∼3-22 μm) via time-domain thermoreflectance (TDTR) and steady-state thermoreflectance (SSTR) from 80 to 500 K. At room temperature, we report a thermal conductivity of ∼320 ± 42 W m-1 K-1, surpassing the values of prior measurements on AlN thin films and one of the highest cross-plane thermal conductivities of any material for films with equivalent thicknesses, surpassed only by diamond. By conducting first-principles calculations, we show that the thermal conductivity measurements on our thin films in the 250-500 K temperature range agree well with the predicted values for the bulk thermal conductivity of pure single-crystal AlN. Thus, our results demonstrate the viability of high-quality AlN films as promising candidates for the high-thermal-conductivity layers in high-power microelectronic devices. Our results also provide insight into the intrinsic thermal conductivity of thin films and the nature of phonon-boundary scattering in single-crystal epitaxially grown AlN thin films. The measured thermal conductivities in high-quality AlN thin films are found to be constant and similar to bulk AlN, regardless of the thermal penetration depth, film thickness, or laser spot size, even when these characteristic length scales are less than the mean free paths of a considerable portion of thermal phonons. Collectively, our data suggest that the intrinsic thermal conductivity of thin films with thicknesses less than the thermal phonon mean free paths is the same as bulk so long as the thermal conductivity of the film is sampled independent of the film/substrate interface.
Collapse
Affiliation(s)
- Yee Rui Koh
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Zhe Cheng
- George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Abdullah Mamun
- Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, United States
| | - Md Shafkat Bin Hoque
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Zeyu Liu
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Tingyu Bai
- Department of Materials Science and Engineering, University of California at Los Angeles, Los Angeles, California 90095, United States
| | - Kamal Hussain
- Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, United States
| | - Michael E Liao
- Department of Materials Science and Engineering, University of California at Los Angeles, Los Angeles, California 90095, United States
| | - Ruiyang Li
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - John T Gaskins
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Ashutosh Giri
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - John Tomko
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Jeffrey L Braun
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Mikhail Gaevski
- Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, United States
| | - Eungkyu Lee
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Luke Yates
- George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Mark S Goorsky
- Department of Materials Science and Engineering, University of California at Los Angeles, Los Angeles, California 90095, United States
| | - Tengfei Luo
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Asif Khan
- Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, United States
| | - Samuel Graham
- George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Patrick E Hopkins
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
- Department of Physics, University of Virginia, Charlottesville, Virginia 22904, United States
| |
Collapse
|
2
|
Singh S, Shervin S, Sun H, Yarali M, Chen J, Lin R, Li KH, Li X, Ryou JH, Mavrokefalos A. Using Mosaicity to Tune Thermal Transport in Polycrystalline Aluminum Nitride Thin Films. ACS APPLIED MATERIALS & INTERFACES 2018; 10:20085-20094. [PMID: 29772174 DOI: 10.1021/acsami.8b02899] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The effect of controlling the c-axis alignment (mosaicity) to the cross-plane thermal transport in textured polycrystalline aluminum nitride (AlN) thin films is experimentally and theoretically investigated. We show that by controlling the sputtering conditions we are able to deposit AlN thin films with varying c-axis grain tilt (mosaicity) from 10° to 0°. Microstructural characterization shows that the films are nearly identical in thickness and grain size, and the difference in mosaicity alters the grain interface quality. This has a significant effect to thermal transport where a thermal conductivity of 4.22 vs 8.09 W/mK are measured for samples with tilt angles of 10° versus 0° respectively. The modified Callaway model was used to fit the theoretical curves to the experimental results using various phonon scattering mechanisms at the grain interface. It was found that using a non-gray model gives an overview of the phonon scattering at the grain boundaries, whereas treating the grain boundary as an array of dislocation lines with varying angle relative to the heat flow, best describes the mechanism of the thermal transport. Lastly, our results show that controlling the quality of the grain interface provides a tuning knob to control thermal transport in polycrystalline materials.
Collapse
Affiliation(s)
| | | | - Haiding Sun
- King Abdullah University of Science and Technology (KAUST) , Advanced Semiconductor Laboratory , Thuwal , Saudi Arabia 23955
| | | | | | - Ronghui Lin
- King Abdullah University of Science and Technology (KAUST) , Advanced Semiconductor Laboratory , Thuwal , Saudi Arabia 23955
| | - Kuang-Hui Li
- King Abdullah University of Science and Technology (KAUST) , Advanced Semiconductor Laboratory , Thuwal , Saudi Arabia 23955
| | - Xiaohang Li
- King Abdullah University of Science and Technology (KAUST) , Advanced Semiconductor Laboratory , Thuwal , Saudi Arabia 23955
| | - Jae-Hyun Ryou
- Texas Center for Superconductivity at UH (TcSUH) and Advanced Manufacturing Institute (AMI) , University of Houston , Houston , Texas 77204 , United States
| | | |
Collapse
|
3
|
Tao L, Theruvakkattil Sreenivasan S, Shahsavari R. Interlaced, Nanostructured Interface with Graphene Buffer Layer Reduces Thermal Boundary Resistance in Nano/Microelectronic Systems. ACS APPLIED MATERIALS & INTERFACES 2017; 9:989-998. [PMID: 28073276 DOI: 10.1021/acsami.6b09482] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Improving heat transfer in hybrid nano/microelectronic systems is a challenge, mainly due to the high thermal boundary resistance (TBR) across the interface. Herein, we focus on gallium nitride (GaN)/diamond interface-as a model system with various high power, high temperature, and optoelectronic applications-and perform extensive reverse nonequilibrium molecular dynamics simulations, decoding the interplay between the pillar length, size, shape, hierarchy, density, arrangement, system size, and the interfacial heat transfer mechanisms to substantially reduce TBR in GaN-on-diamond devices. We found that changing the conventional planar interface to nanoengineered, interlaced architecture with optimal geometry results in >80% reduction in TBR. Moreover, introduction of conformal graphene buffer layer further reduces the TBR by ∼33%. Our findings demonstrate that the enhanced generation of intermediate frequency phonons activates the dominant group velocities, resulting in reduced TBR. This work has important implications on experimental studies, opening up a new space for engineering hybrid nano/microelectronics.
Collapse
Affiliation(s)
- Lei Tao
- Department of Civil and Environmental Engineering, Rice University , Houston, Texas 77005, United States
| | | | - Rouzbeh Shahsavari
- Smalley Institute for Nanoscale Science and Technology, Rice University , Houston, Texas 77005, United States
| |
Collapse
|
5
|
Nagaoka S, Jodai T, Kameyama Y, Horikawa M, Shirosaki T, Ryu N, Takafuji M, Sakurai H, Ihara H. Cellulose/boron nitride core–shell microbeads providing high thermal conductivity for thermally conductive composite sheets. RSC Adv 2016. [DOI: 10.1039/c6ra02950g] [Citation(s) in RCA: 34] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Formation of a thermal conductive network in resin sheet hybridized cellulose/BN core–shell microbeads.
Collapse
Affiliation(s)
- Shoji Nagaoka
- Kumamoto Industrial Research Institute
- Kumamoto 862-0901
- Japan
- Department of Applied Chemistry and Biochemistry
- Kumamoto University
| | - Takuma Jodai
- Ogic Technologies Co. Ltd
- Kumamoto 860-8555
- Japan
- Kumamoto Institute for Photo-Electro Organics (PHOENICS)
- Kumamoto 862-0901
| | - Yoshihiro Kameyama
- Department of Applied Chemistry and Biochemistry
- Kumamoto University
- Kumamoto 860-8555
- Japan
| | - Maki Horikawa
- Kumamoto Industrial Research Institute
- Kumamoto 862-0901
- Japan
- Department of Applied Chemistry and Biochemistry
- Kumamoto University
| | - Tomohiro Shirosaki
- Kumamoto Industrial Research Institute
- Kumamoto 862-0901
- Japan
- Kumamoto Institute for Photo-Electro Organics (PHOENICS)
- Kumamoto 862-0901
| | - Naoya Ryu
- Kumamoto Industrial Research Institute
- Kumamoto 862-0901
- Japan
- Kumamoto Institute for Photo-Electro Organics (PHOENICS)
- Kumamoto 862-0901
| | - Makoto Takafuji
- Department of Applied Chemistry and Biochemistry
- Kumamoto University
- Kumamoto 860-8555
- Japan
- Kumamoto Institute for Photo-Electro Organics (PHOENICS)
| | - Hideo Sakurai
- Department of Applied Chemistry and Biochemistry
- Kumamoto University
- Kumamoto 860-8555
- Japan
- Kumamoto Institute for Photo-Electro Organics (PHOENICS)
| | - Hirotaka Ihara
- Department of Applied Chemistry and Biochemistry
- Kumamoto University
- Kumamoto 860-8555
- Japan
- Kumamoto Institute for Photo-Electro Organics (PHOENICS)
| |
Collapse
|