Ultra-broadband and high response of the Bi2Te3-Si heterojunction and its application as a photodetector at room temperature in harsh working environments

Bi2Se3-PtSe2 heterostructure ultrabroadband UV-to-THz negative photoconductive photodetectors with wide-temperature-range operation

Ultra-broadband photodetectors have important applications in biomedical imaging, environmental monitoring, optical communication, space exploration, and other fields. Therefore, the need for their wide-temperature-range adaptation in extreme environments (e.g., infrared guidance and space exploration) is particularly urgent. However, existing technologies face a number of bottlenecks. First, traditional semiconductor detectors are limited to a single spectral response, meaning ultra-wideband detection requires multi-device integration, while in the terahertz band, there is a physical limitation of the mismatch between the photon energy and the material bandgap. Second, carrier scattering at high temperatures leads to a sudden drop in mobility and degradation of the optical response. Finally, the development of devices based on the negative photoconductivity effect is still in the exploratory stage, which limits their engineering applications. In this study, we innovatively integrated the photothermoelectric effect (PTE), Joule thermal effect (JHE) and photoinduced bolometric effect (PBE) multi-physics mechanisms by constructing a Bi2Se3-PtSe2 heterojunction, which realizes broad-spectrum UV-terahertz (405 nm-0.1 THz) detection and stable operation in a wide temperature range of 183-501 K. Under zero bias, the device exhibits a self-powered positive optical response in the 405-1550 nm band based on the photothermoelectric effect. When bias voltage is applied, a negative photoconductive response is triggered by a synergistic Joule heating and optical radiothermal effect, with a peak responsivity (R) of 44.45-83.6 A W-1, specific detection rate (D*) of up to 4.63 × 107 Jones, and noise-equivalent power (NEP) as low as 1.37 × 10-13 W Hz-1/2. Temperature characterization tests show that the R/D*/NEP was optimized to 78.19 A W-1/5.75 × 107 Jones/1.09 × 10-13 W Hz-1/2 under 1550 nm illumination and at 183 K. Even at 501 K, the device maintains 11.24 A W-1 responsivity and 7.9 × 106 Jones detection sensitivity. The present work breaks through the limitations of the traditional negative photoconductivity effect in terms of the detection bandwidth and temperature stability through a multi-mechanism synergistic strategy, providing a theoretical basis and technical path for the design of a new generation of broad-spectrum photodetectors.

Al Doping Effect on Enhancement of Nonlinear Optical Absorption in Amorphous Bi2Te3 Thin Films

Bismuth telluride (Bi2Te3) has attracted significant attention due to its broadband ultrafast optical response and strong nonlinearity at high laser fluence in the field of optoelectronic materials. The objective of this work is to study the effect of Al doping on the structure, linear optical properties, and nonlinear optical absorption behavior of Bi2Te3 thin films. The amorphous Al-doped Bi2Te3 thin films with varying Al doping concentrations were prepared using magnetron co-sputtering. The structure and linear optical properties were characterized using X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, spectroscopic ellipsometry, and UV/Vis/NIR spectrophotometry. The third-order nonlinear optical absorption properties of Al: Bi2Te3 thin films were investigated using the open-aperture Z-scan system with a 100 fs laser pulse width at a wavelength of 800 nm and a repetition rate of 1 kHz. The results indicate that Al dopant reduces both the refractive index and extinction coefficient and induces a redshift in the optical bandgap. The optical properties of the films can be effectively modulated by varying the Al doping concentration. Compared with undoped Bi2Te3 thin films, Al-doped Bi2Te3 thin films exhibit larger nonlinear optical absorption coefficients and higher damage thresholds and maintaining high transmittance. These findings provide experimental evidence and a reliable approach for the further optimization and design of ultrafast nonlinear optical devices.

A Bi2Te3 topological insulator/carbon nanotubes hybrid composites as a new counter electrode material for DSSC and NIR photodetector application

Two-dimensional layered bismuth telluride (Bi2Te3), a prominent topological insulator, has garnered global scientific attention for its unique properties and potential applications in optoelectronics and electrochemical devices. Notably, there is a growing emphasis on improving photon-to-electron conversion efficiency in dye-sensitized solar cells (DSSCs), prompting the exploration of alternatives to noble metal catalysts like platinum (Pt). This study presents the synthesis of Bi2Te3 and its hybrid nanostructure with single-wall carbon nanotubes (SWCNT) via a straightforward hydrothermal process. The research unveils a novel application for the Bi2Te3-SWCNT hybrid structure, serving as a counter electrode in platinum-free DSSCs, facilitating the conversion of triiodide (I3-) to iodide (I-) and functioning as an active electrode material in a photodetector (n-Bi2Te3-SWCNT/p-Si). The resulting DSSC employing the Bi2Te3-SWCNT hybrid counter electrode achieves a power conversion efficiency (PCE) of 4.2 %, a photocurrent density of 10.5 mA/cm2, a fill factor (FF) of 62 %, and superior charge transfer kinetics compared to pristine Bi2Te3 based counter electrode (PCE 2.1 %, FF 34 %). Additionally, a spin coating technique enhances the performance of the n-Bi2Te3-SWCNT/p-Si photodetector, yielding a responsivity of 2.2 AW-1, detectivity of 1.2 × 10-3 and enhanced external quantum efficiency. These findings demonstrate that the newly developed Bi2Te3-SWCNT heterostructure enhances interfacial charge transport, electrocatalytic performance in DSSCs, and overall photodetector performance.

Performance of Low-Dimensional Solid Room-Temperature Photodetectors-Critical View

In the last twenty years, nanofabrication progress has allowed for the emergence of a new photodetector family, generally called low-dimensional solids (LDSs), among which the most important are two-dimensional (2D) materials, perovskites, and nanowires/quantum dots. They operate in a wide wavelength range from ultraviolet to far-infrared. Current research indicates remarkable advances in increasing the performance of this new generation of photodetectors. The published performance at room temperature is even better than reported for typical photodetectors. Several articles demonstrate detectivity outperforming physical boundaries driven by background radiation and signal fluctuations. This study attempts to explain these peculiarities. In order to achieve this goal, we first clarify the fundamental differences in the photoelectric effects of the new generation of photodetectors compared to the standard designs dominating the commercial market. Photodetectors made of 2D transition metal dichalcogenides (TMDs), quantum dots, topological insulators, and perovskites are mainly considered. Their performance is compared with the fundamental limits estimated by the signal fluctuation limit (in the ultraviolet region) and the background radiation limit (in the infrared region). In the latter case, Law 19 dedicated to HgCdTe photodiodes is used as a standard reference benchmark. The causes for the performance overestimate of the different types of LDS detectors are also explained. Finally, an attempt is made to determine their place in the global market in the long term.

Room-Temperature Band-Aligned Infrared Heterostructures for Integrable Sensing and Communication

The demand for miniaturized and integrated multifunctional devices drives the progression of high-performance infrared photodetectors for diverse applications, including remote sensing, air defense, and communications, among others. Nonetheless, infrared photodetectors that rely solely on single low-dimensional materials often face challenges due to the limited absorption cross-section and suboptimal carrier mobility, which can impair sensitivity and prolong response times. Here, through experimental validation is demonstrated, precise control over energy band alignment in a type-II van der Waals heterojunction, comprising vertically stacked 2D Ta2NiSe5 and the topological insulator Bi2Se3, where the configuration enables polarization-sensitive, wide-spectral-range photodetection. Experimental evaluations at room temperature reveal that the device exhibits a self-powered responsivity of 0.48 A·W-1, a specific directivity of 3.8 × 1011 cm·Hz1/2·W-1, a response time of 151 µs, and a polarization ratio of 2.83. The stable and rapid photoresponse of the device underpins the utility in infrared-coded communication and dual-channel imaging, showing the substantial potential of the detector. These findings articulate a systematic approach to developing miniaturized, multifunctional room-temperature infrared detectors with superior performance metrics and enhanced capabilities for multi-information acquisition.

Two-dimensional layered material photodetectors: what could be the upcoming downstream applications beyond prototype devices?

With distinctive advantages spanning excellent flexibility, rich physical properties, strong electrostatic tunability, dangling-bond-free surface, and ease of integration, 2D layered materials (2DLMs) have demonstrated tremendous potential for photodetection. However, to date, most of the research enthusiasm has been merely focused on developing novel prototype devices. In the past few years, researchers have also been devoted to developing various downstream applications based on 2DLM photodetectors to contribute to promoting them from fundamental research to practical commercialization, and extensive accomplishments have been realized. In spite of the remarkable advancements, these fascinating research findings are relatively scattered. To date, there is still a lack of a systematic and profound summarization regarding this fast-evolving domain. This is not beneficial to researchers, especially researchers just entering this research field, who want to have a quick, timely, and comprehensive inspection of this fascinating domain. To address this issue, in this review, the emerging downstream applications of 2DLM photodetectors in extensive fields, including imaging, health monitoring, target tracking, optoelectronic logic operation, ultraviolet monitoring, optical communications, automatic driving, and acoustic signal detection, have been systematically summarized, with the focus on the underlying working mechanisms. At the end, the ongoing challenges of this rapidly progressing domain are identified, and the potential schemes to address them are envisioned, which aim at navigating the future exploration as well as fully exerting the pivotal roles of 2DLMs towards the practical optoelectronic industry.

Two-dimensional topological semimetals: an emerging candidate for terahertz detectors and on-chip integration

The importance of terahertz (THz) detection lies in its ability to provide detailed information in a non-destructive manner, making it a valuable tool across various domains including spectroscopy, communication, and security. The ongoing development of THz detectors aims to enhance their sensitivity, resolution and integration into compact and portable devices such as handheld scanners or integrated communication chips. Generally, two-dimensional (2D) materials are considered potential candidates for device miniaturization but detecting THz radiation using 2D semiconductors is generally difficult due to the ultra-small photon energy. However, this challenge is being addressed by the advent of topological semimetals (TSM) with zero-bandgap characteristics. These semimetals offer low-energy excitations in proximity to the Dirac point, which is particularly important for applications requiring a broad detection range. Their distinctive band structures with linear energy-momentum dispersion near the Fermi level also lead to high electron mobility and low effective mass. The presence of topologically protected dissipationless conducting channels and self-powered response provides a basis for low-energy integration. In order to establish paradigms for semimetal-based THz detectors, this review initially offers an analytical summary of THz detection principles. Then, the review demonstrates the distinct design of devices, the excellent performance derived from the topological surface state and unique band structures in TSM. Finally, we outline the prospective avenues for on-chip integration of TSM-based THz detectors. We believe this review can promote further research on the new generation of THz detectors and facilitate advancements in THz imaging, spectroscopy, and communication systems.

Recent Advances in Broadband Photodetectors from Infrared to Terahertz

The growing need for the multiband photodetection of a single scene has promoted the development of both multispectral coupling and broadband detection technologies. Photodetectors operating across the infrared (IR) to terahertz (THz) regions have many applications such as in optical communications, sensing imaging, material identification, and biomedical detection. In this review, we present a comprehensive overview of the latest advances in broadband photodetectors operating in the infrared to terahertz range, highlighting their classification, operating principles, and performance characteristics. We discuss the challenges faced in achieving broadband detection and summarize various strategies employed to extend the spectral response of photodetectors. Lastly, we conclude by outlining future research directions in the field of broadband photodetection, including the utilization of novel materials, artificial microstructure, and integration schemes to overcome current limitations. These innovative methodologies have the potential to achieve high-performance, ultra-broadband photodetectors.

Synthesis and Future Electronic Applications of Topological Nanomaterials

Over the last ten years, the discovery of topological materials has opened up new areas in condensed matter physics. These materials are noted for their distinctive electronic properties, unlike conventional insulators and metals. This discovery has not only spurred new research areas but also offered innovative approaches to electronic device design. A key aspect of these materials is now that transforming them into nanostructures enhances the presence of surface or edge states, which are the key components for their unique electronic properties. In this review, we focus on recent synthesis methods, including vapor-liquid-solid (VLS) growth, chemical vapor deposition (CVD), and chemical conversion techniques. Moreover, the scaling down of topological nanomaterials has revealed new electronic and magnetic properties due to quantum confinement. This review covers their synthesis methods and the outcomes of topological nanomaterials and applications, including quantum computing, spintronics, and interconnects. Finally, we address the materials and synthesis challenges that need to be resolved prior to the practical application of topological nanomaterials in advanced electronic devices.

Emerging Schemes for Advancing 2D Material Photoconductive-Type Photodetectors

By virtue of the widely tunable band structure, dangling-bond-free surface, gate electrostatic controllability, excellent flexibility, and high light transmittance, 2D layered materials have shown indisputable application prospects in the field of optoelectronic sensing. However, 2D materials commonly suffer from weak light absorption, limited carrier lifetime, and pronounced interfacial effects, which have led to the necessity for further improvement in the performance of 2D material photodetectors to make them fully competent for the numerous requirements of practical applications. In recent years, researchers have explored multifarious improvement methods for 2D material photodetectors from a variety of perspectives. To promote the further development and innovation of 2D material photodetectors, this review epitomizes the latest research progress in improving the performance of 2D material photodetectors, including improvement in crystalline quality, band engineering, interface passivation, light harvesting enhancement, channel depletion, channel shrinkage, and selective carrier trapping, with the focus on their underlying working mechanisms. In the end, the ongoing challenges in this burgeoning field are underscored, and potential strategies addressing them have been proposed. On the whole, this review sheds light on improving the performance of 2D material photodetectors in the upcoming future.

Infrared avalanche photodiodes from bulk to 2D materials

Avalanche photodiodes (APDs) have drawn huge interest in recent years and have been extensively used in a range of fields including the most important one-optical communication systems due to their time responses and high sensitivities. This article shows the evolution and the recent development of AIIIBV, AIIBVI, and potential alternatives to formerly mentioned-"third wave" superlattices (SL) and two-dimensional (2D) materials infrared (IR) APDs. In the beginning, the APDs fundamental operating principle is demonstrated together with progress in architecture. It is shown that the APDs evolution has moved the device's performance towards higher bandwidths, lower noise, and higher gain-bandwidth products. The material properties to reach both high gain and low excess noise for devices operating in different wavelength ranges were also considered showing the future progress and the research direction. More attention was paid to advances in AIIIBV APDs, such as AlInAsSb, which may be used in future optical communications, type-II superlattice (T2SLs, "Ga-based" and "Ga-free"), and 2D materials-based IR APDs. The latter-atomically thin 2D materials exhibit huge potential in APDs and could be considered as an alternative material to the well-known, sophisticated, and developed AIIIBV APD technologies to include single-photon detection mode. That is related to the fact that conventional bulk materials APDs' performance is restricted by reasonably high dark currents. One approach to resolve that problem seems to be implementing low-dimensional materials and structures as the APDs' active regions. The Schottky barrier and atomic level thicknesses lead to the 2D APD dark current significant suppression. What is more, APDs can operate within visible (VIS), near-infrared (NIR)/mid-wavelength infrared range (MWIR), with a responsivity ~80 A/W, external quantum efficiency ~24.8%, gain ~105 for MWIR [wavelength, λ = 4 μm, temperature, T = 10-180 K, Black Phosphorous (BP)/InSe APD]. It is believed that the 2D APD could prove themselves to be an alternative providing a viable method for device fabrication with simultaneous high-performance-sensitivity and low excess noise.

Broadband All-Optical THz Modulator Based on Bi2Te3/Si Heterostructure Driven by UV-Visible Light

All-optical terahertz (THz) modulators have received tremendous attention due to their significant role in developing future sixth-generation technology and all-optical networks. Herein, the THz modulation performance of the Bi₂Te₃/Si heterostructure is investigated via THz time-domain spectroscopy under the control of continuous wave lasers at 532 nm and 405 nm. Broadband-sensitive modulation is observed at 532 nm and 405 nm within the experimental frequency range from 0.8 to 2.4 THz. The modulation depth reaches 80% under the 532 nm laser illumination with a maximum power of 250 mW and 96% under 405 nm illumination with a high power of 550 mW. The mechanism of the largely enhanced modulation depth is attributed to the construction of a type-II Bi₂Te₃/Si heterostructure, which could promote photogenerated electron and hole separation and increase carrier density dramatically. This work proves that a high photon energy laser can also achieve high-efficiency modulation based on the Bi₂Te₃/Si heterostructure, and the UV-Visible control laser may be more suitable for designing advanced all-optical THz modulators with micro-level sizes.

Room Temperature Broadband Bi2Te3/PbS Colloidal Quantum Dots Infrared Photodetectors

Lead sulfide colloidal quantum dots (PbS CQDs) are promising optoelectronic materials due to their unique properties, such as tunable band gap and strong absorption, which are of immense interest for application in photodetectors and solar cells. However, the tunable band gap of PbS CQDs would only cover visible short-wave infrared; the ability to detect longer wavelengths, such as mid- and long-wave infrared, is limited because they are restricted by the band gap of the bulk material. In this paper, a novel photodetector based on the synergistic effect of PbS CQDs and bismuth telluride (Bi₂Te₃) was developed for the detection of a mid-wave infrared band at room temperature. The device demonstrated good performance in the visible-near infrared band (i.e., between 660 and 850 nm) with detectivity of 1.6 × 10¹⁰ Jones at room temperature. It also exhibited photoelectric response in the mid-wave infrared band (i.e., between 4.6 and 5.1 μm). The facile fabrication process and excellent performance (with a response of up to 5.1 μm) of the hybrid Bi₂Te₃/PbS CQDS photodetector are highly attractive for many important applications that require high sensitivity and broadband light detection.

2D Bi2Te3/Si heterostructure with high thermoelectric power factor enabled by interface regulated carrier injection

It has been highly demanded to optimize the charge carrier concentration in 2D Bi₂Te₃to achieve enhanced thermoelectric performance. This work reveals that, constructing 2D Bi₂Te₃/Si heterostructure with tuned interfacial electronic band structure can meet the above needs. When the work function in Si substrate is decreased from 4.6 to 4.06 eV, the charge carrier concentration and electron effective mass are increased simultaneously. Consequently, the electrical conductivity of 2D Bi₂Te₃on n⁺⁺-Si has reaches up to 1250 S·cm^-1, which is 90% higher than the counterpart on SiO₂/Si substrate, although the Seebeck coefficient in these two samples is around -103μV·K^-1. The resultant power factor of 2D Bi₂Te₃/n⁺⁺-Si heterostructure is 13.4μW·cm^-1·K^-2, which is one of the best values among similar studies ever reported. This work demonstrates a facile way to improve thermoelectric properties via interfacial engineering in a heterostructure.

Superior Performances of Self-Driven Near-Infrared Photodetectors Based on the SnTe:Si/Si Heterostructure Boosted by Bulk Photovoltaic Effect

The upsurge of new materials that can be used for near-infrared (NIR) photodetectors operated without cooling is crucial. As a novel material with a small bandgap of ≈0.28 eV, the topological crystalline insulator SnTe has attracted considerable attention. Herein, this work demonstrates self-driven NIR photodetectors based on SnTe/Si and SnTe:Si/Si heterostructures. The SnTe/Si heterostructure has a high detectivity D* of 3.3 × 10¹² Jones. By Si doping, the SnTe:Si/Si heterostructure reduces the dark current density and increases the photocurrent by ≈1 order of magnitude simultaneously, which improves the detectivity D* by ≈2 orders of magnitude up to 1.59 × 10¹⁴ Jones. Further theoretical analysis indicates that the improved device performance may be ascribed to the bulk photovoltaic effect (BPVE), in which doped Si atoms break the inversion symmetry and thus enable the generation of additional photocurrents beyond the heterostructure. In addition, the external quantum efficiency (EQE) measured at room temperature at 850 nm increases by a factor of 7.5 times, from 38.5% to 289%. A high responsivity of 1979 mA W^-1 without bias and fast rising time of 8 µs are also observed. The significantly improved photodetection achieved by the Si doping is of great interest and may provide a novel strategy for superior photodetectors.

Two-Dimensional Van Der Waals Topological Materials: Preparation, Properties, and Device Applications

Over the past decade, 2D van der Waals (vdW) topological materials (TMs), including topological insulators and topological semimetals, which combine atomically flat 2D layers and topologically nontrivial band structures, have attracted increasing attention in condensed-matter physics and materials science. These easily cleavable and integrated TMs provide the ideal platform for exploring topological physics in the 2D limit, where new physical phenomena may emerge, and represent a potential to control and investigate exotic properties and device applications in nanoscale topological phases. However, multifaced efforts are still necessary, which is the prerequisite for the practical application of 2D vdW TMs. Herein, this review focuses on the preparation, properties, and device applications of 2D vdW TMs. First, three common preparation strategies for 2D vdW TMs are summarized, including single crystal exfoliation, chemical vapor deposition, and molecular beam epitaxy. Second, the origin and regulation of various properties of 2D vdW TMs are introduced, involving electronic properties, transport properties, optoelectronic properties, thermoelectricity, ferroelectricity, and magnetism. Third, some device applications of 2D vdW TMs are presented, including field-effect transistors, memories, spintronic devices, and photodetectors. Finally, some significant challenges and opportunities for the practical application of 2D vdW TMs in 2D topological electronics are briefly addressed.

High-Performance Ultrabroadband Photodetector Based on Photothermoelectric Effect

Ultrabroadband photodetectors (PDs) working in the frequency range from the UV to THz regions of the spectrum play a crucial role in integrated multifunction photoelectric detection. Even so, a shortage of high-performance PDs has seriously restricted the overall development of this field. The present work demonstrates a high-performance, ultrabroadband PD with a composite nanostructure comprising a suspended carbon nanotube (CNT) film on which titanium and palladium are deposited. The application of titanium and palladium to the CNT film in this device provides n-doping and p-doping, respectively, and the deposited metal nanoparticles also ensure enhanced thermal localization. This device exhibits short response time, high responsivity, large linear dynamic range, and small noise equivalent power over the ultrabroadband spectrum based on a strong photothermoelectric effect. Numerical simulation results also confirm the effective doping and enhanced thermal localization in this PD resulting from the deposited metals. A theoretical analysis shows that the thermal conductivity of the composite film is no longer independent of the temperature over a wide temperature range. This work provides a simple but novel strategy for the design of high-performance ultrabroadband PDs.

Epitaxial Topological Insulator Bi2Te3 for Fast Visible to Mid-Infrared Heterojunction Photodetector by Graphene As Charge Collection Medium

Three dimensional topological insulators have a thriving application prospect in broadband photodetectors due to the possessed topological quantum states. Herein, a large area and uniform topological insulator bismuth telluride (Bi₂Te₃) layer with high crystalline quality is directly epitaxial grown on GaAs(111)B wafer using a molecular beam epitaxy process, ensuring efficient out-of-plane carriers transportation due to reduced interface defects influence. By tiling monolayer graphene (Gr) on the as-prepared Bi₂Te₃ layer, a Gr/Bi₂Te₃/GaAs heterojunction array prototype was further fabricated, and our photodetector array exhibited the capability of sensing ultrabroad photodetection wavebands from visible (405 nm) to mid-infrared (4.5 μm) with a high specific detectivity (D*) up to 10¹² Jones and a fast response speed at about microseconds at room temperature. The enhanced device performance can be attributed to enhanced light-matter interaction at the high-quality heterointerface of Bi₂Te₃/GaAs and improved carrier collection efficiency through graphene as a charge collection medium, indicating an application prospect of topological insulator Bi₂Te₃ for fast-speed broadband photodetection up to a mid-infrared waveband. This work demonstrated the potential of integrated topological quantum materials with a conventional functional substrate to fabricate the next generation of broadband photodetection devices for uncooled focal plane array or infrared communication systems in future.

Ultrabroadband Tellurium Photoelectric Detector from Visible to Millimeter Wave

Ultrabroadband photodetection is of great significance in numerous cutting-edge technologies including imaging, communications, and medicine. However, since photon detectors are selective in wavelength and thermal detectors are slow in response, developing high performance and ultrabroadband photodetectors is extremely difficult. Herein, one demonstrates an ultrabroadband photoelectric detector covering visible, infrared, terahertz, and millimeter wave simultaneously based on single metal-Te-metal structure. Through the two kinds of photoelectric effect synergy of photoexcited electron-hole pairs and electromagnetic induced well effect, the detector achieves the responsivities of 0.793 A W-1 at 635 nm, 9.38 A W-1 at 1550 nm, 9.83 A W-1 at 0.305 THz, 24.8 A W-1 at 0.250 THz, 87.8 A W-1 at 0.172 THz, and 986 A W-1 at 0.022 THz, respectively. It also exhibits excellent polarization detection with a dichroic ratio of 468. The excellent performance of the detector is further verified by high-resolution imaging experiments. Finally, the high stability of the detector is tested by long-term deposition in air and high-temperature aging. The strategy provides a recipe to achieve ultrabroadband photodetection with high sensitivity and fast response utilizing full photoelectric effect.

High-resolution in situ patterning of perovskite quantum dots via femtosecond laser direct writing

Colloidal quantum dots (QDs) have exhibited great potential for optoelectronic applications, including displays, lasers, anti-counterfeiting and information storage. However, the high-resolution patterning technique of QDs is still a challenge, while precise patterned QDs are of great value for practical applications. Here, a femtosecond laser direct writing strategy was demonstrated for the in situ fabrication of high-resolution-patterned perovskite quantum dots (PQDs) by the laser-induced Marangoni flow to aggregate and deposit the PQDs based on the opto-thermoelectric mechanism. By regulating the laser power and the exposure time, the minimum line width could reach 1.58 μm. Importantly, through the patterning of red, green and blue PQDs, the strategy exhibited the applicability in full-color PQD materials. Moreover, the deposited PQDs can preserve the original photophysical properties including photoluminescence spectra and excited state lifetime. The approach provides a strategy to fabricate high-resolution patterned PQDs in situ, which is a promising alternative in photonic applications including high-resolution displays and anti-counterfeiting.

Highly Sensitive and Ultra-Broadband VO2(B) Photodetector Dominated by Bolometric Effect

In this study, Wadsley B phase vanadium oxide (VO₂(B)) with broad-band photoabsorption ability, a large temperature coefficient of resistance (TCR), and low noise was developed for uncooled broad-band detection. By using a freestanding structure and reducing the size of active area, the VO₂(B) photodetector shows stable and excellent performances in the visible to the terahertz region (405 nm to 0.88 mm), with a peak TCR of -4.77% K^-1 at 40 °C, a peak specific detectivity of 6.02 × 10⁹ Jones, and a photoresponse time of 83 ms. A terahertz imaging ability with 30 × 30 pixels was demonstrated. Scanning photocurrent imaging and real-time temperature-photocurrent measurements confirm that a photothermal-type bolometric effect is the dominating mechanism. The study shows the potential of VO₂(B) in applications as a new type of uncooled broad-band photodetection material and the potential to further raise the performance of broad-band photodetectors by structural design.

2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices

2D layered materials (2DLMs) have come under the limelight of scientific and engineering research and broke new ground across a broad range of disciplines in the past decade. Nevertheless, the members of stoichiometric 2DLMs are relatively limited. This renders them incompetent to fulfill the multitudinous scenarios across the breadth of electronic and optoelectronic applications since the characteristics exhibited by a specific material are relatively monotonous and limited. Inspiringly, alloying of 2DLMs can markedly broaden the 2D family through composition modulation and it has ushered a whole new research domain: 2DLM alloy nano-electronics and nano-optoelectronics. This review begins with a comprehensive survey on synthetic technologies for the production of 2DLM alloys, which include chemical vapor transport, chemical vapor deposition, pulsed-laser deposition, and molecular beam epitaxy, spanning their development, as well as, advantages and disadvantages. Then, the up-to-date advances of 2DLM alloys in electronic devices are summarized. Subsequently, the up-to-date advances of 2DLM alloys in optoelectronic devices are summarized. In the end, the ongoing challenges of this emerging field are highlighted and the future opportunities are envisioned, which aim to navigate the coming exploration and fully exert the pivotal role of 2DLMs toward the next generation of electronic and optoelectronic devices.

Highly Efficient, Ultrabroad PdSe2 Phototransistors from Visible to Terahertz Driven by Mutiphysical Mechanism

The noble transition metal dichalcogenide palladium diselenide (PdSe₂) is an ideal candidate material for broad-spectrum photodetection owing to the large bandgap tunability, high mobility, low thermal conductivity, and large Seebeck coefficient. In this study, self-powered ultrabroadband PdSe₂ photodetectors from the visible-infrared to terahertz (THz) region driven by a mutiphysical mechanism are reported. In the visible-infrared region, the photogenerated electron-hole pairs in the PdSe₂ body are quickly separated by the built-in electric field at the metal-semiconductor interface and achieve a photoresponsivity of 28 A·W^-1 at 405 nm and 0.4 A·W^-1 at 1850 nm. In the THz region, PdSe₂ photodetectors display a room-temperature responsivity of 20 mA·W^-1 at 0.10 THz and 5 mA·W^-1 at 0.24 THz based on efficient production of hot carriers in an antenna-assisted structure. Owing to the fast response speed of ∼7.5 μs and low noise equivalent power of ∼900 pW·Hz^-1/2, high-resolution transmission THz imaging is demonstrated under an ambient environment at room temperature. Our research validates the great potential of PdSe₂ for broadband photodetection and provides a possibility for future optoelectronic applications.

Simulation Study on the Effect of Doping Concentrations on the Photodetection Properties of Mg2Si/Si Heterojunction Photodetector

To develop and design an environmentally friendly, low-cost shortwave infrared (SWIR) photodetector (PD) material and extend the optical response cutoff wavelengths of existing silicon photodetectors beyond 1100 nm, high-performance silicon-compatible Mg2Si/Si PDs are required. First, the structural model of the Mg2Si/Si heterojunction was established using the Silvaco Atlas module. Second, the effects of the doping concentrations of Mg2Si and Si on the photoelectric properties of the Mg2Si/Si heterojunction PD, including the energy band, breakdown voltage, dark current, forward conduction voltage, external quantum efficiency (EQE), responsivity, noise equivalent power (NEP), detectivity, on/off ratio, response time, and recovery time, were simulated. At different doping concentrations, the heterojunction energy band shifted, and a peak barrier appeared at the conduction band of the Mg2Si/Si heterojunction interface. When the doping concentrations of Si and Mg2Si layer were 1017, and 1016 cm−3, respectively, the Mg2Si/Si heterojunction PD could obtain optimal photoelectric properties. Under these conditions, the maximum EQE was 70.68% at 800 nm, the maximum responsivity was 0.51 A/W at 1000 nm, the minimum NEP was 7.07 × 10−11 WHz–1/2 at 1000 nm, the maximum detectivity was 1.4 × 1010 Jones at 1000 nm, and the maximum on/off ratio was 141.45 at 1000 nm. The simulation and optimization result also showed that the Mg2Si/Si heterojunction PD could be used for visible and SWIR photodetection in the wavelength range from 400 to 1500 nm. The results also provide technical support for the future preparation of eco-friendly heterojunction photodetectors.

Self-driven SnS1-xSex alloy/GaAs heterostructure based unique polarization sensitive photodetectors

With the fast development of semiconductor technology, self-driven devices have become an indispensable part of modern electronic and optoelectronic components. In this field, in addition to traditional Schottky and p-n junction devices, hybrid 2D/3D semiconductor heterostructures provide an alternative platform for optoelectronic applications. Herein we report the growth of 2D SnS_1-xSe_x (x = 0, 0.5, 1) nanosheets and the construction of a hybrid SnS_0.5Se_0.5/GaAs heterostructure based self-driven photodetector. The strong anisotropy of 2D SnS_1-xSe_x is demonstrated theoretically and experimentally. The self-driven photodetector shows high sensitivity to incident light from the visible to near-infrared regime. At the wavelength of 405 nm, the device enables maximum responsivity of 10.2 A W^-1, high detectivity of 4.8 × 10¹² Jones and fast response speed of 0.5/3.47 ms. Impressively, such a heterostructure device exhibits anisotropic photodetection characteristics with the dichroic ratio of ∼1.25 at 405 nm and ∼1.45 at 635 nm. These remarkable features can be attributed to the high-quality built-in potential at the SnS_0.5Se_0.5/GaAs interface and the alloy engineering, which effectively separates the photogenerated carriers and suppresses the deep-level defects, respectively. These results imply the great potential of our SnS_0.5Se_0.5/GaAs heterostructure for high-performance photodetection devices.

Morphology evolution and enhanced broadband photoresponse behavior of two-dimensional Bi2Te3nanosheets

Bismuth telluride (Bi₂Te₃), as an emerging two-dimensional (2D) material, has attracted extensive attention from scientific researchers due to its excellent optoelectronic, thermoelectric properties and topological structure. However, the application research of Bi₂Te₃mainly focuses on thermoelectric devices, while the research on optoelectronic devices is scarce. In this work, the morphology evolution and growth mechanism of 2D Bi₂Te₃nanosheets with a thickness of 12 ± 3 nm were systematically studied by solvothermal method. Then, the Bi₂Te₃nanosheets were annealed at 350 °C for 1 h and applied to self-powered photoelectrochemical-type broadband photodetectors. Compared with the as-synthesized Bi₂Te₃photodetector, the photocurrent of the photodetector based on the annealed Bi₂Te₃is significantly enhanced, especially enhanced by 18.3 times under near-infrared light illumination. Furthermore, the performance of annealed Bi₂Te₃photodetector was systematically studied. The research results show that the photodetector not only has a broadband response from ultraviolet to near-infrared (365-850 nm) under zero bias voltage, but also obtains the highest responsivity of 6.6 mA W^-1under green light with an incident power of 10 mW cm^-2. The corresponding rise time and decay time are 17 ms and 20 ms, respectively. These findings indicate that annealed Bi₂Te₃nanosheets have great potential to be used as self-powered high-speed broadband photodetectors with high responsivity.

Multielement 2D layered material photodetectors

The pronounced quantum confinement effects, outstanding mechanical strength, strong light-matter interactions and reasonably high electric transport properties under atomically thin limit have conjointly established 2D layered materials (2DLMs) as compelling building blocks towards the next generation optoelectronic devices. By virtue of the diverse compositions and crystal structures which bring about abundant physical properties, multielement 2DLMs (ME2DLMs) have become a bran-new research focus of tremendous scientific enthusiasm. Herein, for the first time, this review provides a comprehensive overview on the latest evolution of ME2DLM photodetectors. The crystal structures, synthesis, and physical properties of various experimentally realized ME2DLMs as well as the development in metal-semiconductor-metal photodetectors are comprehensively summarized by dividing them into narrow-bandgap ME2DLMs (including Bi₂O₂X (X = S, Se, Te), EuMTe₃(M = Bi, Sb), Nb₂XTe₄(X = Si, Ge), Ta₂NiX₅(X = S, Se), M₂PdX₆(M = Ta, Nb; X = S, Se), PbSnS₂), moderate-bandgap ME2DLMs (including CuIn₇Se₁₁, CuTaS₃, GaGeTe, TlMX₂(M = Ga, In; X = S, Se)), wide-bandgap ME2DLMs (including BiOX (X = F, Cl, Br, I), MPX₃(M = Fe, Ni, Mn, Cd, Zn; X = S, Se), ABP₂X₆(A = Cu, Ag; B = In, Bi; X = S, Se), Ga₂In₄S₉), as well as topological ME2DLMs (MIrTe₄(M = Ta, Nb)). In the last section, the ongoing challenges standing in the way of further development are underscored and the potential strategies settling them are proposed, which is aimed at navigating the future advancement of this fascinating domain.

Photosensing and Characterizing of the Pristine and In-, Sn-Doped Bi2Se3 Nanoplatelets Fabricated by Thermal V-S Process

Pristine, and In-, Sn-, and (In, Sn)-doped Bi₂Se₃ nanoplatelets synthesized on Al₂O₃(100) substrate by a vapor–solid mechanism in thermal CVD process via at 600 °C under 2 × 10⁻² Torr. XRD and HRTEM reveal that In or Sn dopants had no effect on the crystal structure of the synthesized rhombohedral-Bi₂Se₃. FPA–FTIR reveals that the optical bandgap of doped Bi₂Se₃ was 26.3%, 34.1%, and 43.7% lower than pristine Bi₂Se₃. XRD, FESEM–EDS, Raman spectroscopy, and XPS confirm defects (In3+Bi3+), (In3+V0), (Sn4+Bi3+), (V0Bi3+), and (Sn2+Bi3+). Photocurrent that was generated in (In,Sn)-doped Bi₂Se₃ under UV(8 W) and red (5 W) light revealed stable photocurrents of 5.20 × 10⁻¹⁰ and 0.35 × 10⁻¹⁰ A and high I_photo/I_dark ratios of 30.7 and 52.2. The rise and fall times of the photocurrent under UV light were 4.1 × 10⁻² and 6.6 × 10⁻² s. Under UV light, (In,Sn)-dopedBi₂Se₃ had 15.3% longer photocurrent decay time and 22.6% shorter rise time than pristine Bi₂Se₃, indicating that (In,Sn)-doped Bi₂Se₃ exhibited good surface conduction and greater photosensitivity. These results suggest that In, Sn, or both dopants enhance photodetection of pristine Bi₂Se₃ under UV and red light. The findings also suggest that type of defect is a more important factor than optical bandgap in determining photo-detection sensitivity. (In,Sn)-doped Bi₂Se₃ has greater potential than undoped Bi₂Se₃ for use in UV and red-light photodetectors.

Reversible engineering of topological insulator surface state conductivity through optical excitation

Despite the broadband response, limited optical absorption at a particular wavelength hinders the development of optoelectronics based on Dirac fermions. Heterostructures of graphene and various semiconductors have been explored for this purpose, while non-ideal interfaces often limit the performance. The topological insulator (TI) is a natural hybrid system, with the surface states hosting high-mobility Dirac fermions and the small-bandgap semiconducting bulk state strongly absorbing light. In this work, we show a large photocurrent response from a field effect transistor device based on intrinsic TI Sn-Bi_1.1Sb_0.9Te₂S (Sn-BSTS). The photocurrent response is non-volatile and sensitively depends on the initial Fermi energy of the surface state, and it can be erased by controlling the gate voltage. Our observations can be explained with a remote photo-doping mechanism, in which the light excites the defects in the bulk and frees the localized carriers to the surface state. This photodoping modulates the surface state conductivity without compromising the mobility, and it also significantly modify the quantum Hall effect of the surface state. Our work thus illustrates a route to reversibly manipulate the surface states through optical excitation, shedding light into utilizing topological surface states for quantum optoelectronics.

High performing flexible optoelectronic devices using thin films of topological insulator

Topological insulators (TIs) possess exciting nonlinear optical properties due to presence of metallic surface states with the Dirac fermions and are predicted as a promising material for broadspectral phodotection ranging from UV (ultraviolet) to deep IR (infrared) or terahertz range. The recent experimental reports demonstrating nonlinear optical properties are mostly carried out on non-flexible substrates and there is a huge demand for the fabrication of high performing flexible optoelectronic devices using new exotic materials due to their potential applications in wearable devices, communications, sensors, imaging etc. Here first time we integrate the thin films of TIs (Bi₂Te₃) with the flexible PET (polyethylene terephthalate) substrate and report the strong light absorption properties in these devices. Owing to small band gap material, evolving bulk and gapless surface state conduction, we observe high responsivity and detectivity at NIR (near infrared) wavelengths (39 A/W, 6.1 × 10⁸ Jones for 1064 nm and 58 A/W, 6.1 × 10⁸ Jones for 1550 nm). TIs based flexible devices show that photocurrent is linearly dependent on the incident laser power and applied bias voltage. Devices also show very fast response and decay times. Thus we believe that the superior optoelectronic properties reported here pave the way for making TIs based flexible optoelectronic devices.

Direct Tellurization of Pt to Synthesize 2D PtTe2 for High-Performance Broadband Photodetectors and NIR Image Sensors

Platinum telluride (PtTe₂) has garnered significant research enthusiasm owing to its unique characteristics. However, large-scale synthesis of PtTe₂ toward potential photoelectric and photovoltaic application has not been explored yet. Herein, we report direct tellurization of Pt nanofilms to synthesize large-area PtTe₂ films and the influence of growth conditions on the morphology of PtTe₂. Electrical analysis reveals that the as-grown PtTe₂ films exhibit typical semimetallic behavior, which is in agreement with the results of first-principles density functional theory (DFT) simulation. Moreover, the combination of multilayered PtTe₂ and Si results in the formation of a PtTe₂/Si heterojunction, exhibiting an obvious rectifying effect. Moreover, the PtTe₂-based photodetector displays a broadband photoresponse to incident radiation in the range of 200-1650 nm, with the maximum photoresponse at a wavelength of ∼980 nm. The R and D* of the PtTe₂-based photodetector are found to be 0.406 A W^-1 and 3.62 × 10¹² Jones, respectively. In addition, the external quantum efficiency is as high as 32.1%. On the other hand, the response time of τ_rise and τ_fall is estimated to be 7.51 and 36.7 μs, respectively. Finally, an image sensor composed of a 8 × 8 PtTe₂-based photodetector array was fabricated, which can record five near-infrared (NIR) images under 980 nm with a satisfying resolution. The result demonstrates that the as-prepared PtTe₂ material will be useful for application in NIR optoelectronics.

Photoresponse-Bias Modulation of a High-Performance MoS2 Photodetector with a Unique Vertically Stacked 2H-MoS2/1T@2H-MoS2 Structure

Monolayer 2H-phase MoS₂-based photodetectors exhibit high photon absorption but suffer from low photoresponse, which severely limits their applications in optoelectronic fields. The metallic 1T phase of MoS₂, while transporting carriers faster, shows negligible response to visible light, which limits its usage in photodetectors. Herein, we propose an ultrafast-response MoS₂-based photodetector having a channel that consists of a 2H-MoS₂ sensitizing monolayer on top of 1T@2H-MoS₂. The 1T@2H-MoS₂ layer has a thickness of several nanometers and is a mixture of metallic 1T-MoS₂ and semiconducting 2H-MoS₂, imparting metal-like properties to the photodetector. Compared with the monolayer 2H-MoS₂ photodetector, we observed a drastic increase in the photoresponse of the 2H-MoS₂/1T@2H-MoS₂ vertically stacked photodetector to a value of 1917 A W^-1. Owing to the presence of metallic 1T-MoS₂ within the metal-like 1T@2H-MoS₂, the performance of the 2H-MoS₂/1T@2H-MoS₂ vertically stacked photodetector is voltage bias-modulated with an external quantum efficiency (EQE) of up to 448,384% and a specific detectivity of up to ∼10¹¹ Jones. The higher carrier density and higher mobility of the 1T@2H-MoS₂ layer explain the better bias-modulated performance. In addition, the interface between 2H-MoS₂ and 1T@2H-MoS₂ ensures fewer dangling bonds and reduced lattice mismatching. Thus, this study presents an exclusive vertically stacked MoS₂-based photodetector that lays the foundation for the development of photodetectors exhibiting higher photoresponse.

Highly green fluorescent Nb2C MXene quantum dots

Here, two dimensional Nb2C quantum dots with green fluorescence were fabricated for the first time with a quantum yield (QY) of up to 19%, the highest reported for Nb2C dots so far with good photostability and pH stability. The S,N doping on Nb2C was considered to be the main reason for the enhanced high QY of the Nb2C dots and was proved by the density functional theory (DFT) calculations. It was demonstrated that the fluorescent probe could be utilized effectively for 3D brain organoid labeling and thus has huge prospects in biological sensing.

Thermal Localization Enhanced Fast Photothermoelectric Response in a Quasi-One-Dimensional Flexible NbS3 Photodetector

Ultra-broadband photodetection is crucial for various applications like imaging and sensing and has become a hot research topic in recent years. However, most of the reported ultra-broadband photodetectors can only cover the range from ultraviolet to infrared, which is insufficient. Herein, a photothermoelectric (PTE) detector made of NbS₃ is reported. The device shows a considerable performance from ultraviolet to terahertz. For all examined wavelengths, the photoresponsivities are all larger than 1 V W^-1 while the response time is less than 10 ms, much shorter than the reported ultra-broadband photodetectors made of millimetric scale graphene, ternary chalcogenide single crystal, and other materials. The extraordinary performance is fully discussed and can be attributed to the thermal localization enhanced PTE effect. Because of the short thermal decay length and low thermal loss, the heat generated by the illumination is localized in only a micrometer scale along the channel, and thus a strong PTE response is produced. In addition, the fabricated device also demonstrates robust flexibility and stability. Thanks to the quasi-one-dimensional (quasi-1D) structure, the NbS₃ crystal is easy to be scaled down and thus intrinsically facilitate the integration of detectors. With these favorable merits, the quasi-1D NbS₃ crystal holds a promising potential in high-performance, ultra-broadband photodetectors.

2D material broadband photodetectors

Our review provides a comprehensive overview of the latest evolution of broadband photodetectors (BBPDs) based on 2D materials (2DMs). We begin with BBPDs built on various 2DM channels, including narrow-bandgap 2DMs, 2D topological semimetals, 2D charge density wave compounds, and 2D heterojunctions. Then, we introduce defect-engineered 2DM BBPDs, including vacancy engineering, heteroatom incorporation, and interfacial engineering. Subsequently, we summarize 2DM based mixed-dimensional (0D-2D, 1D-2D, 2D-3D, and 0D-2D-3D) BBPDs. Finally, we provide several viewpoints for the future development of this burgeoning field.

Self-Powered Broad-band Photodetectors Based on Vertically Stacked WSe2/Bi2Te3 p-n Heterojunctions

Semiconducting p-n heterojunctions, serving as the basic unit of modern electronic devices, such as photodetectors, solar-energy conversion devices, and light-emitting diodes (LEDs), have been extensively investigated in recent years. In this work, high performance self-powered broad-band photodetectors were fabricated based on vertically stacked p-n heterojunctions though combining p-type WSe₂ with n-type Bi₂Te₃ via van der Waals (vdW) epitaxial growth. Devices based on the p-n heterojunction show obvious current rectification behaviors in the dark and superior photovoltaic characteristics under light irradiation. A maximum short circuit current of 18 nA and open circuit voltage of 0.25 V can be achieved with the illumination light of 633 nm (power density: 26.4 mW/cm²), which are among the highest values compared with the ever reported 2D vdW heterojunctions synthesized by chemical vapor deposition (CVD) method. Benefiting from the broad-band absorption of the heterostructures, the detection range can be expanded from the visible to near-infrared (375-1550 nm). Moreover, ascribing to the efficient carriers separation process at the junction interfaces, the devices can be further employed as self-powered photodetectors, where a fast response time (∼210 μs) and high responsivity (20.5 A/W at 633 nm and 27 mA/W at 1550 nm) are obtained under zero bias voltage. The WSe₂/Bi₂Te₃ p-n heterojunction-based self-powered photodetectors with high photoresponsivity, fast photoresponse time, and broad spectral response will find potential applications in high speed and self-sufficient broad-band devices.

Transfer of transition-metal dichalcogenide circuits onto arbitrary substrates for flexible device applications

Transition-metal dichalcogenide (TMD) materials with two-dimensional layered structures and stable surfaces are well suited for transparent and flexible device applications. In order to completely utilize the advantages of thickness control and fabrication of various heterostructure stacks, we proposed a transfer method of TMD field-effect transistors (FETs) and TMD complementary metal-oxide-semiconductor (CMOS) circuits from a Si/SiO2 substrate to a flexible substrate. We compared the characteristics of transferred MoS2 and WSe2 FETs with those of the corresponding devices transferred after channel passivation with an Al2O3 layer on a flexible substrate. Al2O3 passivation further stabilized the transfer of the entire device with electrodes. A CMOS circuit with MoS2 and WSe2 materials could be successfully transferred to a polyethylene terephthalate substrate after the channel passivation. This implies that TMD circuits can be easily fabricated on polymer substrates, which makes them suitable for use in semiconductor processes, for various applications.

Polarimetric Three-Dimensional Topological Insulators/Organics Thin Film Heterojunction Photodetectors

As a state of quantum matter with insulating bulk and gapless surface states, topological insulators (TIs) have huge potential in optoelectronic devices. On the other hand, polarization resolution photoelectric devices based on anisotropic materials have overwhelming advantages in practical applications. In this work, the 3D TIs Bi₂Te₃/organics thin film heterojunction polarimetric photodetectors with high anisotropic mobility ratio, fast response time, high responsivity, and EQE in broadband spectra are presented. At first, the maximum anisotropic mobility ratio of the Bi₂Te₃/organics thin film can reach 2.56, which proves that Bi₂Te₃ can serve as a sensitive material for manufacturing polarization photoelectric devices. Moreover, it is found that the device can exhibit a broad bandwidth and ultrahigh response photocurrent from visible to middle wave infrared spectra (405-3500 nm). The highest responsivity (R_i) of optimized devices can reach up to 23.54 AW^-1; surprisingly, the R_i of the device can still reach 1.93 AW^-1 at 3500 nm. In addition, the ultrahigh external quantum efficiency is 4534% with a fast response time (1.42 ms). Excellent properties mentioned above indicate that TIs/organics heterojunction devices are suitable for manufacturing high-performance photoelectric devices in infrared region.

High performance broadband bismuth telluride tetradymite topological insulator photodiode

A small bulk gap and the presence of Dirac electrons due to conductive surface states make tetradymite topological insulators promising candidates for optoelectronic devices. In this work, we demonstrate a highly responsive Bi₂Te₃-Si heterostructure photodiode. The thermally evaporated Bi₂Te₃ film, exhibiting a nanocrystalline nature, shows p-type doping behavior due to bismuth vacancies. As a result of the work function difference between Bi₂Te₃ and p-type Si, charge transfer occurs and a Schottky barrier is formed. Using the thermionic emission model, the barrier height (Φ_B) is extracted to be ∼0.405 eV. For minimizing the effect of extrinsic defects, the photodiodes were capped with graphene or Si₃N₄. Since graphene acts as an efficient photoexcited carrier collector, the graphene capped device outperforms the Si₃N₄ capped device. The higher quality Bi₂Te₃ nanocrystalline film of the Si₃N₄ capped photodiode contributes to a one-order-of-magnitude improvement in responsivity at 1550 nm wavelength, as compared to the graphene capped photodiode. The Si₃N₄ capped photodiode shows photoresponse even at zero bias for 1550 nm wavelength. Built-in potential due to charge transfer at the interface of Bi₂Te₃ and Si capped with a graphene electrode exhibits the highest responsivity (8.9 A W^-1). Broadband photodetection is observed in both types of photodiodes.

Novel synthesis of topological insulator based nanostructures (Bi2Te3) demonstrating high performance photodetection

The rapid progress in 2D material research has triggered the growth of various quantum nanostructures- nanosheets, nanowires, nanoribbons, nanocrystals and the exotic nature originating through 2D heterostructures has extended the synthesis of hybrid materials beyond the conventional approaches. Here we introduce simple, one step confined thin melting approach to form nanostructures of TI (topological insulator) materials, their hybrid heterostructures with other novel 2D materials and their scalable growth. The substrate and temperature dependent growth is investigated on insulating, superconducting, metallic, semiconducting and ferromagnetic materials. The temperature dependent synthesis enables the growth of single, few quintuples to nanosheets and nanocrystals. The density of nanostructure growth is seen more on fabricated patterns or textured substrates. The fabricated nanostructure based devices show the broadband photodetection from ultraviolet to near infrared and exhibit high photoresponsivity. Ultimately, this unique synthesis process will give easy access to fabricate devices on user friendly substrates, study nanostructures and scalable growth will enable their future technology applications.

Three-Dimensional Topological Insulator Bi2Te3/Organic Thin Film Heterojunction Photodetector with Fast and Wideband Response from 450 to 3500 Nanometers

In the pursuit of broadband photodetection materials from visible to mid-IR region, the fresh three-dimensional topological insulators (3D TIs) are theoretically predicted to be a promising candidate due to its Dirac-like stable surface state and high absorption rate. In this work, a self-powered inorganic/organic heterojunction photodetector based on n-type 3D TIs Bi₂Te₃ combined with p-type pentacene thin film was designed and fabricated. Surprisingly, it was found that the Bi₂Te₃/pentacene heterojunction photodetector exhibited a fast and wideband response from 450 to 3500 nm. The optimized responsivity of photodetector reached 14.89 A/W, along with the fast response time of 1.89 ms and the ultrahigh external quantum efficiency of 2840%. Moreover, at the mid-IR 3500 nm, our devices demonstrated a responsivity of 1.55 AW^-1, which was several orders of magnitude higher than that of previous 3D TIs photodetector. These excellent properties indicate that the inorganic/organic heterojunction, that is, the combination of 3D TIs with organic materials, is an exciting structure for high performance photodetectors in the wideband detection region. On account of the fact that the device is constructed on mica substrate, this work also represents a potential scenario for flexible optoelectronic devices.

Synthesis of Two-Dimensional Alloy Ga0.84In0.16Se Nanosheets for High-Performance Photodetector

The electronic and optoelectronic properties of 2D alloy Ga_0.84In_0.16Se were investigated for the first time. 2D Ga_0.84In_0.16Se FETs show p-type conduction behaviors. 2D Ga_0.84In_0.16Se photodetectors show high photoresponse in the visible light range of 500 to 700 nm. The responsivity value is 258 A/W for alloy photodetector (500 nm illumination), and it is 92 times and 20 times higher than those of 2D GaSe and InSe photodetectors, respectively. Moreover, the alloy photodetector exhibits good photoresponse stability and rapid photoresponse time. Our results demonstrate that 2D alloy Ga_0.84In_0.16Se has great potential for application in photodetection and sensor devices.

Ultrasensitive 2D/3D Heterojunction Multicolor Photodetectors: A Synergy of Laterally and Vertically Aligned 2D Layered Materials

In this work, a p-type 2D SnS nanofilm containing both laterally and vertically aligned components was successfully deposited on an n-type Si substrate through pulsed-laser deposition. Energy band analysis demonstrates a typical type-II band alignment between SnS and Si, which is beneficial to the separation of photogenerated carriers. The as-fabricated p-SnS/n-Si heterojunction photodetector exhibits multicolor photoresponse from ultraviolet to near-infrared (370-1064 nm). Importantly, the device manifests a high responsivity of 273 A/W, a large external quantum efficiency of 4.2 × 10⁴%, and an outstanding detectivity of 7× 10¹³ Jones (1 Jones = 1 cm Hz^1/2 W^-1), which far outperforms state-of-the-art 2D/3D heterojunction photodetectors incorporating either laterally or vertically aligned 2D layered materials (2DLMs). The splendid performance is ascribed to lateral SnS's dangling-bond-free interface induced efficient carrier separation, vertical SnS's high-speed carrier transport, and collision ionization induced carrier multiplication. In sum, the current work depicts a unique landscape for revolutionary design and advancement of 2DLM-based heterojunction photodetectors.

Multilayer ReS2 Photodetectors with Gate Tunability for High Responsivity and High-Speed Applications

Rhenium disulfide (ReS₂) is an attractive candidate for photodetection applications owing to its thickness-independent direct band gap. Despite various photodetection studies using two-dimensional semiconductors, the trade-off between responsivity and response time under varying measurement conditions has not been studied in detail. This report presents a comprehensive study of the architectural, laser power and gate bias dependence of responsivity and speed in supported and suspended ReS₂ phototransistors. Photocurrent scans show uniform photogeneration across the entire channel because of enhanced optical absorption and a direct band gap in multilayer ReS₂. A high responsivity of 4 A W^-1 (at 50 ms response time) and a low response time of 20 μs (at 4 mA W^-1 responsivity) make this one of the fastest reported transition-metal dichalcogenide photodetectors. Occupancy of intrinsic (bulk ReS₂) and extrinsic (ReS₂/SiO₂ interface) traps is modulated using gate bias to demonstrate tunability of the response time (responsivity) over 4 orders (15×) of magnitude, highlighting the versatility of these photodetectors. Differences in the trap distributions of suspended and supported channel architectures, and their occupancy under different gate biases enable switching the dominant operating mechanism between either photogating or photoconduction. Further, a new metric that captures intrinsic photodetector performance by including the trade-off between its responsivity and speed, besides normalizing for the applied bias and geometry, is proposed and benchmarked for this work.

High-Performance, Ultra-Broadband, Ultraviolet to Terahertz Photodetectors Based on Suspended Carbon Nanotube Films

Ultra-broad spectral detection is critical for several technological applications in imaging, sensing, spectroscopy, and communication. Carbon nanotube (CNT) films are a promising material for ultra-broadband photodetectors because their absorption spectra cover the entire ultraviolet to the terahertz range. However, because of the high binding energy of excitons, photodetectors based on CNT films always require a strong electric field, asymmetric electrical contacts, or hybrid structures with other materials. Here, we report an ultra-broadband bolometric photodetector based on a suspended CNT film. With an abundant distribution of tube diameters and an appropriate morphology (spider web-like), the CNT films display a strong absorption spectrum from the ultraviolet up to the terahertz region. Under illumination, heat generated from the electron-photon interaction dominates the photoresponse of our devices. For small changes in temperature, the photocurrent shows a convincing linear dependence with the absorbed light's power across 3 orders of magnitude. When the channel length is reduced to 100 μm, the device demonstrates a high performance with an ultraviolet responsivity of up to 0.58 A/W with a bias voltage of 0.2 V and a short response time of ∼150 μs in vacuum, which is better than that of many other photodetectors based on CNTs. Moreover, this performance could be further enhanced by optimization.

Device Applications of Synthetic Topological Insulator Nanostructures

This review briefly describes the development of synthetic topological insulator materials in the application of advanced electronic devices. As a new class of quantum matter, topological insulators with insulating bulk and conducting surface states have attracted attention in more and more research fields other than condensed matter physics due to their intrinsic physical properties, which provides an excellent basis for novel nanoelectronic, optoelectronic, and spintronic device applications. In comparison to the mechanically exfoliated samples, the newly emerging topological insulator nanostructures prepared with various synthetical approaches are more intriguing because the conduction contribution of the surface states can be significantly enhanced due to the larger surface-to-volume ratio, better manifesting the unique properties of the gapless surface states. So far, these synthetic topological insulator nanostructures have been implemented in different electrically accessible device platforms via electrical, magnetic and optical characterizations for material investigations and device applications, which will be introduced in this review.

Solution-Processed Bi2S3 Photoresistor Film To Mitigate a Trade-off between Morphology and Electronic Properties

Bismuth sulfide (Bi₂S₃) is an attractive 2D layered, visible-light-absorbing semiconductor composed of nontoxic, abundant elements. Improving the quality of a Bi₂S₃ film for device applications while maintaining its intrinsic electronic properties is a challenge, as conventional film fabrication processes require a trade-off due to the uncontrolled nucleation and growth steps. We report a novel procedure for Bi₂S₃ film formation involving spin-coating of a precursor solution of bismuth acetate and thiourea, followed by crystallization under diluted H₂S gas. This two-step process produced a large-grained (<400 nm), smooth (surface roughness = 1.7 nm), and highly pure Bi₂S₃ film with a layer-stacked structure on a substrate. Most importantly, the film exhibited a moderate Hall effect electron mobility (∼7 cm² V^-1 s^-1) and excellent performance as a photoresistor with improved photoconductance and on-off ratio compared with those prepared by conventional methods. Our approach provides a versatile route for the development of metal sulfide semiconductors for optoelectronic devices.

Ultra-Broadband Flexible Photodetector Based on Topological Crystalline Insulator SnTe with High Responsivity

Topological crystalline insulators (TCIs) are predicted to be a promising candidate material for ultra-broadband photodetectors ranging from ultraviolet (UV) to terahertz (THz) due to its gapless surface state and narrow bulk bandgap. However, the low responsivity of TCIs-based photodetectors limits their further applications. In this regard, a high-performance photodetector based on SnTe, a recently developed TCI, working in a broadband wavelength range from deep UV to mid-IR with high responsivity is reported. By taking advantage of the strong light absorption and small bandgap of SnTe, photodetectors based on the as-grown SnTe crystalline nanoflakes as well as specific short channel length achieve a high responsivity (71.11 A W^-1 at 254 nm, 49.03 A W^-1 at 635 nm, 10.91 A W^-1 at 1550 nm, and 4.17 A W^-1 at 4650 nm) and an ultra-broad spectral response (254-4650 nm) simultaneously. Moreover, for the first time, a durable flexible SnTe photodetector fabricated directly on a polyethylene terephthalate film is demonstrated. These results prove the great potential of TCIs as a promising material for integrated and flexible optoelectronic devices.

High-performance broadband heterojunction photodetectors based on multilayered PtSe2 directly grown on a Si substrate

Two-dimensional group-10 transition metal dichalcogenides have recently attracted increasing research interest because of their unique electronic and optoelectronic properties. Herein, we present vertical hybrid heterojunctions of multilayered PtSe2 and Si, which take advantage of large-scale homogeneous PtSe2 films grown directly on Si substrates. These heterojunctions show obvious rectifying behavior and a pronounced photovoltaic effect, enabling them to function as self-driven photodetectors operating at zero bias. The photodetectors can operate in both photovoltage and photocurrent modes, with responsivity values as high as 5.26 × 106 V W-1 and 520 mA W-1 at 808 nm, respectively. The Ilight/Idark ratio, specific detectivity, and response speed are 1.5 × 105, 3.26 × 1013 Jones, and 55.3/170.5 μs, respectively. Furthermore, the heterojunctions are highly sensitive in a broad spectral region ranging from deep ultraviolet to near-infrared (NIR) (200-1550 nm). Because of the strong NIR light absorption of PtSe2, the heterojunctions exhibit photocurrent responsivities of 33.25 and 0.57 mA W-1 at telecommunication wavelengths of 1310 and 1550 nm, respectively. Considering the excellent performance of the PtSe2/Si heterojunctions, they are highly suitable for application in high-performance broadband photodetectors. The generality of the above results also signifies that the proposed in situ synthesis method has great potential for future large-scale optoelectronic device integration.