Reduced graphene oxide wrapped core-shell metal nanowires as promising flexible transparent conductive electrodes with enhanced stability

Flexible Transparent Conductive Electrodes: Unveiling Growth Mechanisms, Material Dimensions, Fabrication Methods, and Design Strategies

Flexible transparent conductive electrodes (FTCEs) constitute an indispensable component in state-of-the-art electronic devices, such as wearable flexible sensors, flexible displays, artificial skin, and biomedical devices, etc. This review paper offers a comprehensive overview of the fabrication techniques, growth modes, material dimensions, design, and their impacts on FTCEs fabrication. The growth modes, such as the "Stranski-Krastanov growth," "Frank-van der Merwe growth," and "Volmer-Weber growth" modes provide flexibility in fabricating FTCEs. Application of different materials including 0D, 1D, 2D, polymer composites, conductive oxides, and hybrid materials in FTCE fabrication, emphasizing their suitability in flexible devices are discussed. This review also delves into the design strategies of FTCEs, including microgrids, nanotroughs, nanomesh, nanowires network, and "kirigami"-inspired patterns, etc. The pros and cons associated with these materials and designs are also addressed appropriately. Considerations such as trade-offs between electrical conductivity and optical transparency or "figure of merit (FoM)," "strain engineering," "work function," and "haze" are also discussed briefly. Finally, this review outlines the challenges and opportunities in the current and future development of FTCEs for flexible electronics, including the improved trade-offs between optoelectronic parameters, novel materials development, mechanical stability, reproducibility, scalability, and durability enhancement, safety, biocompatibility, etc.

A solution-processed Ag@ZnO core–shell nanowire network for stretchable transparent electromagnetic interference shielding application

We develop a method to prepare Ag@ZnO core–shell heterojunction nanowire networks with high EMI shielding effectiveness due to enhancement in microwave absorption via microwave-assisted interface charge transport processes.

Failing Forward: Stability of Transparent Electrodes Based on Metal Nanowire Networks

Metal nanowire (MNW)-based transparent electrode technologies have significantly matured over the last decade to become a prominent low-cost alternative to indium tin oxide (ITO). Beyond reaching the same level of performance as ITO, MNW networks offer additional advantages including flexibility and low materials cost. To facilitate adoption of MNW networks as a replacement to ITO, they must overcome their inherent stability issues while maintaining their properties and cost-effectiveness. Herein, the fundamental failure mechanisms of MNW networks are discussed in detail. Recent strategies to computationally model MNWs from the nano- to macroscale and suggest future work to capture dynamic failure to unravel mechanisms that account for convolution of the failure modes are highlighted. Strategies to characterize MNW network failure in situ and postmortem are also discussed. In addition, recent work about improving the stability of MNW networks via encapsulation is discussed. Lastly, a perspective is given on how to frame the requirements of MNW-encapsulant hybrids with reference to their target applications, namely: solar cells, transparent film heaters, sensors, and displays. A cost analysis to comment on the feasibility of implementing MNW hybrids is provided, and critical areas to focus on for future work on MNW networks are suggested.

Fabrication of Silver Mesh/Grid and Its Applications in Electronics

With the development of flexible electronics, researchers have endeavored to improve the characteristics of the commonly used indium tin oxide such as brittleness, poor mechanical or chemical stability, and scarcity. Currently, many alternative materials have been considered such as conductive polymers, graphene, carbon nanotubes, metallic nanoparticles (NPs), nanowires (NWs), or nanofibers. Among them, silver (Ag) mesh/grid NPs or NWs have been considered as an excellent substitute due to the good transmittance, excellent electrical conductivity, outstanding mechanical robustness, and cost competitiveness. So far, much effort has been devoted to the fabrication of Ag mesh/grid, and many methods such as printing technology, self-assembly, electrospun, hot-pressing, and atomic layer deposition have been reported. Here printing technologies include jet printing, gravure printing, screen printing, nanoimprint lithography, microcontact printing, and flexographic printing. The solution-based self-assembly usually combines with coating, template, or mask assistance. This review summarizes the characteristics of these fabrication methods for the Ag mesh/grid with its related applications in electronics. Then the prospect and challenges of the fabrication methods are discussed, and the new preparation approaches and applications of the Ag mesh/grid are highlighted, which will be of significance for the applications in electronics such as transparent conducting electrodes, organic light-emitting diode, energy harvester, strain sensor, cells, etc.

A flexible, room-temperature and solution-processible copper nanowire based transparent electrode protected by reduced graphene oxide exhibiting high performance and improved stability

Advances in flexible electronic and optoelectronic devices have caused higher requirements for fabricating high-performance and low cost flexible transparent conductive electrodes (TCEs). Copper nanowires (Cu NWs) possess excellent electrical and optical properties, but the large contact resistance and poor stability limit their practical application in optoelectronic devices. In this work, we report a robust, convenient and environment-friendly method to assemble copper nanowires/reduced graphene oxide (Cu NWs/rGO) TCEs with enhanced conductivity, flexibility and stability at room temperature. The NaBH₄ treatment was used to remove the organics and oxides on the surface of Cu NWs, and the graphene oxide (GO) capping layer was also effectively reduced at the same time. The best Cu NWs/rGO composite TCEs show a good optical-electrical performance with a sheet resistance of ∼50 Ω/sq and transmittance of 83% as well as superior mechanical flexibility. The oxidation resistance of Cu NWs in normal environment and even at a relatively high temperature has also been greatly improved. Additionally, the Cu NWs/rGO TCEs based heaters presented high saturation temperature and rapid response time under a low voltage. The high-performance composite Cu NWs TCEs with good stability are expected to be applied in various types of flexible optoelectronic devices.

Improved Stability of Metal Nanowires via Electron Beam Irradiation Induced Surface Passivation

Suppressing the corrosion of nanoscaled metal materials is a critical issue for various devices. Herein, we demonstrate the electron beam irradiation can be a simple and efficient method to realize silver/copper nanowires protection by transforming the original organic capping agents into dense carbonaceous shells. Single nanowire tests prove the significant stability improvement from 4 days to 20 days for silver nanowire and from 20 h to at least 1 week for copper nanowire. The comprehensive advantages such as solution/pollution-free and continuous process with high precision offer this method substantial potential applications in bottom-up assembled electronic and optoelectronic devices.

Fabrication of high-quality copper nanowires flexible transparent conductive electrodes with enhanced mechanical and chemical stability

Copper nanowires (Cu NWs) become a potential functional material in future optoelectronic devices owing to their high optical transmittance, super electrical conductivity, and good flexibility as well as low cost. However, the drawbacks of Cu NWs with large contact resistance and poor stability make them far from the practical implementations. Herein we report a robust method to fabricate high-quality Cu NWs transparent conductive electrodes (TCEs) with enhanced mechanical and chemical stability at room temperature. Firstly, we used a sodium borohydride (NaBH₄) treatment to remove the organics and oxides on surface of Cu NWs and thus greatly improved the conductivity of Cu NWs TCEs. Subsequently, followed by decorating a dense hydrophobic dodecanethiol (DT) protective layer, the formed Cu NWs TCEs showed superior mechanical and chemical stability compared to the raw ones. The optimized Cu NWs TCEs exhibit a sheet resistance of ∼38 Ω/sq at an optical transmittance of 83% (550 nm). Unlike the bare Cu NWs, the DT-decorated Cu NWs showed good stability under humid conditions at (85% RH) at 85 °C for 12 h. Moreover, the DT-decorated Cu NW TCEs were tested as transparent heaters, showing the fast response time and high saturation temperature under a low DC voltage. Our studies demonstrate that the proper post treatments for Cu NWs TCEs would make them more competitive in application of next-generation electronic and optoelectronic devices.

Coating-free, air-stable silver nanowires for high-performance transparent conductive film

Silver nanowire (Ag NW) based films are considered as a promising alternative for traditional indium tin oxide but still suffer from some limitations, including insufficient conductivity, transparency and environmental instability. We here report a novel etching synthesis strategy to improve the performance of Ag NW films. Different from the traditional methods to synthesize high aspect ratios of NWs or employ electrically conductive coatings, we find it effective to reduce the high-reactivity defects of NWs for optimizing the comprehensive performance of Ag NW films. In this strategy etching can suppress the generation of high-reactivity defects and meanwhile the etching growth of NWs can be accomplished in an uneven ligand distribution environment. The resulting Ag NWs are uniformly straight with a sharp-edged structure. The transparent conductive film obtained exhibits simultaneous improvements in electrical conductivity, transparency and air stability. Even after exposure in air for 200 days and no protective coatings, the film can still meet the highest requirement of practical applications, with a figure of merit 361 (i.e., FoM > 350). These results not only demonstrate the importance of defect control in the synthesis of Ag NWs, but also pave a way for further optimizing the performance of Ag NW-based films.

Emerging Novel Metal Electrodes for Photovoltaic Applications

Emerging novel metal electrodes not only serve as the collector of free charge carriers, but also function as light trapping designs in photovoltaics. As a potential alternative to commercial indium tin oxide, transparent electrodes composed of metal nanowire, metal mesh, and ultrathin metal film are intensively investigated and developed for achieving high optical transmittance and electrical conductivity. Moreover, light trapping designs via patterning of the back thick metal electrode into different nanostructures, which can deliver a considerable efficiency improvement of photovoltaic devices, contribute by the plasmon-enhanced light-mattering interactions. Therefore, here the recent works of metal-based transparent electrodes and patterned back electrodes in photovoltaics are reviewed, which may push the future development of this exciting field.

Real-time and stepwise deoxidization processes to tune the photoluminescence properties of graphene oxide using EC-SPR spectroscopy

The development of a stepwise deoxidized process and real-time monitoring of the large-scale mass production of electrochemically reduced graphene oxide (ErGO) sheets are important issues.

Large-Area Highly Conductive Transparent Two-Dimensional Ti2CTx Film

We report a simple and scalable method to fabricate homogeneous transparent conductive thin films (Ti₂CT_x, one of the MXene) by dip coating of an Al₂O₃ substrate in a colloidal solution of large-area Ti₂CT_x thin flakes. Scanning electron microscopy and atomic force microscopy images exhibit the wafer-scale homogeneous Ti₂CT_x thin film (∼5 nm) covering the whole substrate. The sheet resistance is as low as 70 Ω/sq at 86% transmittance, which corresponds to the high figure of merit (FOM) of 40.7. Furthermore, the thickness of the film is tuned by a SF₆+Ar plasma treatment, which etches Ti₂CT_x film layer by layer and removes the top oxidized layer without affecting the bottom layer of the Ti₂CT_x flake. The resistivity of plasma-treated Ti₂CT_x film is further decreased to 63 Ω/sq with an improved transmittance of 89% and FOM of 51.3, demonstrating the promise of Ti₂CT_x for future transparent conductive electrode application.