1
|
Sun Y, Jiang M, Li B, Xie X, Shan C, Shen D. Electron-hole plasma Fabry-Perot lasing in a Ga-incorporated ZnO microbelt via Ag nanoparticle deposition. OPTICS EXPRESS 2022; 30:740-753. [PMID: 35209258 DOI: 10.1364/oe.440628] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/17/2021] [Accepted: 11/19/2021] [Indexed: 06/14/2023]
Abstract
In this work, individual ZnO via Ga-doped (ZnO:Ga) microbelts with excellent crystallinity and smooth facets can enable the realization of lateral microresonator Fabry-Perot (F-P) microlasers, and the F-P lasing action originates from excitonic state. Interestingly, introducing Ag nanoparticles (AgNPs) deposited on the microbelt can increase F-P lasing characteristics containing a lower threshold and enhanced lasing output. Especially for the large size AgNPs (the diameter d is approximately 200 nm), the lasing features also exhibit a significant redshift of each lasing peak and an observable broadening of the spectral line width with an increase of the excitation fluence. And the remarkable lasing characteristics are belonging to the electron-hole plasma (EHP) luminescence. The behavior and dynamics of the stimulated radiation in an AgNPs@ZnO:Ga microbelt are studied, suggesting the Mott-transition from the excitonic state to EHP state that is responsible for the F-P lasing. These features can be attributed to the working mechanism that the hot electrons created by the large size AgNPs through nonradiative decay can fill the conduction band of nearby ZnO:Ga, leading to a downward shift of the conduction band edge. This novel filling influence can facilitate bandgap renormalization and result in EHP emission. The results provide a comprehensive understanding of the transition between excitonic and EHP states in the stimulated emission process. More importantly, it also can provide new scheme to developing high efficiency and ultra-low threshold microlasing diodes.
Collapse
|
2
|
Chen Z, Zhang Y, Chu S, Sun R, Wang J, Chen J, Wei B, Zhang X, Zhou W, Shi Y, Wang Z. Grain Boundary Induced Ultralow Threshold Random Laser in a Single GaTe Flake. ACS APPLIED MATERIALS & INTERFACES 2020; 12:23323-23329. [PMID: 32337969 DOI: 10.1021/acsami.0c03419] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Random lasing is a lasing phenomenon realized in random media, and it has attracted a great deal of attention in recent years. An essential requirement for strong random lasing is to achieve strong and recurrent scattering among grain boundaries of a disordered structure. Herein, we report a random laser (RL) based on individual polycrystalline GaTe microflakes (MFs) with a lasing threshold of 4.15 kW cm-2, about 1-2 orders of magnitude lower than that of the reported single GaN microwire random laser. The strongly enhanced light scattering and trapping benefit from the reduced grain size in the polycrystalline GaTe MF, resulting in a ultralow threshold. We also investigate the dependence of spatially localized cavities' dimension on the pumping intensity profile and temperature. The findings provide a feasible route to realize RL with a low threshold and small size, opening up a new avenue in fulfilling many potential optoelectronic applications of RL.
Collapse
Affiliation(s)
- Zuxin Chen
- Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
- International Iberian Nanotechnology Laboratory (INL), Av. Mestre Jose Veiga s/n, 4715-330 Braga, Portugal
| | - Yingjun Zhang
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science & Technology, Wuhan 430074, China
| | - Sheng Chu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou, 510275, China
| | - Rong Sun
- International Iberian Nanotechnology Laboratory (INL), Av. Mestre Jose Veiga s/n, 4715-330 Braga, Portugal
| | - Jun Wang
- Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
- International Iberian Nanotechnology Laboratory (INL), Av. Mestre Jose Veiga s/n, 4715-330 Braga, Portugal
| | - Jiapeng Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou, 510275, China
| | - Bin Wei
- International Iberian Nanotechnology Laboratory (INL), Av. Mestre Jose Veiga s/n, 4715-330 Braga, Portugal
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou, 510275, China
| | - Xin Zhang
- International Iberian Nanotechnology Laboratory (INL), Av. Mestre Jose Veiga s/n, 4715-330 Braga, Portugal
| | - Weihang Zhou
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science & Technology, Wuhan 430074, China
| | - Yumeng Shi
- Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Zhongchang Wang
- International Iberian Nanotechnology Laboratory (INL), Av. Mestre Jose Veiga s/n, 4715-330 Braga, Portugal
- School of Materials and Energy, Southwest University, Chongqing 400715, China
| |
Collapse
|
3
|
Huang Y, Zhu H, Zheng H, Tang Z, Dong J, Su S, Shen Y, Gui X, Deng S, Tang Z. Five-photon absorption upconversion lasing from on-chip whispering gallery mode. NANOSCALE 2020; 12:6130-6136. [PMID: 32129405 DOI: 10.1039/d0nr00326c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
In the progress of ultrafast optics, nonlinear interactions between light and matter are very important in scientific and technical fields. In particular, the high-order nonlinear effect induced by multi-photon absorption (MPA) upconversion lasing has injected new impetus into the research on short-wavelength laser sources. Here, we report the realization of amplified spontaneous emission (ASE) by MPA simultaneously in an epitaxy thin film. In addition, by virtue of the excellent optical confinement of cylindrical microcavities with high Q (∼4 × 103) on-chip, we demonstrated, for the first time, low-threshold upconversion lasing of five-photon absorption enhanced by a microcavity at room temperature. The resonant whispering-gallery mode (WGM) distribution in cylindrical microcavities was simulated comprehensively by the finite difference time domain (FDTD) method. We found that the high-order nonlinear optical process could be significantly enhanced in the microcavity with an increase in the lifetime of radiation photons.
Collapse
Affiliation(s)
- Ying Huang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China.
| | - Hai Zhu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China.
| | - Huying Zheng
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China.
| | - Ziying Tang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China.
| | - Jianwen Dong
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China.
| | - Shichen Su
- Institute of Optoelectronic Material and Technology, South China Normal University, Guangzhou 510631, China
| | - Yan Shen
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China
| | - Xuchun Gui
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China
| | - Shaozhi Deng
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China
| | - Zikang Tang
- The Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau, China
| |
Collapse
|
4
|
Miao C, Xu H, Jiang M, Ji J, Kan C. Employing rhodium tripod stars for ultraviolet plasmon enhanced Fabry–Perot mode lasing. CrystEngComm 2020. [DOI: 10.1039/d0ce00890g] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/31/2022]
Abstract
Rhodium tripod stars serving as ultraviolet plasmons can provide a highly competitive platform to achieve high-performance Fabry–Perot lasing of quadrilateral ZnO microwires.
Collapse
Affiliation(s)
- Changzong Miao
- College of Science
- Nanjing University of Aeronautics and Astronautics
- Nanjing 211106
- China
- Key Laboratory for Intelligent Nano Materials and Devices
| | - Haiying Xu
- College of Science
- Nanjing University of Aeronautics and Astronautics
- Nanjing 211106
- China
- Department of Mathematics and Physics
| | - Mingming Jiang
- College of Science
- Nanjing University of Aeronautics and Astronautics
- Nanjing 211106
- China
- Key Laboratory for Intelligent Nano Materials and Devices
| | - Jiaolong Ji
- College of Science
- Nanjing University of Aeronautics and Astronautics
- Nanjing 211106
- China
| | - Caixia Kan
- College of Science
- Nanjing University of Aeronautics and Astronautics
- Nanjing 211106
- China
- Key Laboratory for Intelligent Nano Materials and Devices
| |
Collapse
|
5
|
He J, Hu S, Ren J, Cheng X, Hu Z, Wang N, Zhang H, Lam RHW, Tam HY. Biofluidic Random Laser Cytometer for Biophysical Phenotyping of Cell Suspensions. ACS Sens 2019; 4:832-840. [PMID: 30854844 DOI: 10.1021/acssensors.8b01188] [Citation(s) in RCA: 20] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Phenotypic profiling of single floating cells in liquid biopsies is the key to the era of precision medicine. A random laser in biofluids is a promising tool for the label-free characterization of the biophysical properties as a result of the high brightness and sharp peaks of the lasing spectra, yet previous reports were limited to the random laser in solid tissues with dense scattering. In this report, a random laser cytometer is demonstrated in an optofluidic device filled with gain medium and human breast normal/cancerous cells. The multiple lightscattering event induced by the microscale human cells promotes random lasing and influences the lasing properties in term of laser modes, spectral wavelengths, and lasing thresholds. A sensing strategy based on analyzing the lasing properties is developed to determine both the whole cell and the subcellular biophysical properties, and the malignant alterations of the cell suspensions are successfully detected. Our results provide a new approach to designing a label-free biophysical cytometer based on optofluidic random laser devices, which is advantageous for further research in the field of random laser bioapplication.
Collapse
Affiliation(s)
- Jijun He
- Department of Electrical Engineering, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
| | - Shuhuan Hu
- Department of Mechanical and Biomedical Engineering, City University of Hong Kong, Kowloon, Hong Kong, China
- BGI-Shenzhen, Shenzhen 518083, Guangdong, China
- Guangdong High-Throughput Sequencing Research Center, Shenzhen, Guangdong, China
| | - Jifeng Ren
- Department of Mechanical and Biomedical Engineering, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Xin Cheng
- Department of Electrical Engineering, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
| | - Zhijia Hu
- School of Instrument Science and Optoelectronics Engineering, Hefei University of Technology, Hefei 230009, China
- Aston Institute of Photonic Technologies, Aston University, Birmingham B4 7ET, U.K
| | - Ning Wang
- National Engineering Laboratory for Fiber Optic Sensing Technology, Wuhan University of Technology, Wuhan, China
| | - Huangui Zhang
- BGI-Shenzhen, Shenzhen 518083, Guangdong, China
- Guangdong High-Throughput Sequencing Research Center, Shenzhen, Guangdong, China
| | - Raymond H. W. Lam
- Department of Mechanical and Biomedical Engineering, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Hwa-Yaw Tam
- Department of Electrical Engineering, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
| |
Collapse
|
6
|
Chen Z, Lou G, Zhu H, Chen A, Wu Y, Ren Y, Li J, Qiu Z, Gui X, Tang Z. Enhancement of two-photon absorption photoresponse based on whispering gallery modes. NANOSCALE 2018; 10:14047-14054. [PMID: 29995032 DOI: 10.1039/c8nr02806k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Nonlinear multiphoton absorption technology is crucial for developing novel optoelectronic devices and nanophotonics. The large enhancement of two-photon absorption (TPA) photoresponse by a high Q-factor whispering gallery mode (WGM) resonance based on a single-microwire (MW) self-formed hexagonal cavity was investigated comprehensively in this paper. The typical quadratic relationship of photocurrent as a function of incident power indicated that excited carriers resulted from a third-order nonlinear mechanism. Moreover, the photocurrent response had a dramatic dependence on the spatial location of the focus spot of the incident photons. It was demonstrated that the TPA photocurrent response in the resonant WGM mode was one-order of magnitude larger than the response in the Fabry-Perot mode. Furthermore, the photoresponse characteristics of TPA detection exhibited sensitive dependence on the incident laser polarization direction.
Collapse
Affiliation(s)
- Zhiyang Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China.
| | - Guanlin Lou
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China.
| | - Hai Zhu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China.
| | - Anqi Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China.
| | - Yanyan Wu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China.
| | - Yuhao Ren
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China.
| | - Jinyu Li
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China.
| | - Zhiren Qiu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China.
| | - Xuchun Gui
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China.
| | - Zikang Tang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China. and The Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau, China
| |
Collapse
|
7
|
Wu Y, Li J, Zhu H, Ren Y, Lou G, Chen Z, Gui X, Tang Z. Enhanced random laser by metal surface-plasmon channel waveguide. OPTICS EXPRESS 2018; 26:17511-17518. [PMID: 30119562 DOI: 10.1364/oe.26.017511] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/11/2018] [Accepted: 06/11/2018] [Indexed: 06/08/2023]
Abstract
Compared with conventional lasers, the random laser is realized through strong multiple scatterings in disordered gain system. In this paper, random lasing (RL) in one-dimensional metal surface plasmon (SP) waveguide with gold-plated self-formed silicon pyramids was investigated comprehensively. Consequently, the emission intensity of RL was enhanced dramatically and the RL threshold was reduced significantly through Au-coated Si spiky tips. Meanwhile, one-dimensional metal SP channel waveguides confined the emitting light in a certain direction with a small divergence angle. Using FDTD simulations, it was found that the enhancement effect for RL is likely attributed to the localized surface plasmon (LSP) field. In addition, the LSP field nearby the spiky tips can enhance field-molecule interaction, which was benefit for lasing in small scale. The results in this letter supplied a feasible method to realize the application of RL in subwavelength optical elements.
Collapse
|