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Šolajić A, Pešić J. Novel wide spectrum light absorber heterostructures based on hBN/In(Ga)Te. J Phys Condens Matter 2022; 34:345301. [PMID: 35709717 DOI: 10.1088/1361-648x/ac7996] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2022] [Accepted: 06/16/2022] [Indexed: 06/15/2023]
Abstract
Two-dimensional group III monochalcogenides have recently attracted quite attention for their wide spectrum of optical and electric properties, being promising candidates for optoelectronic and novel electrical applications. However, in their pristine form they are extremely sensitive and vulnerable to oxygen in air and need good mechanical protection and passivization. In this work we modeled and studied two newly designed van der Waals (vdW) heterostructures based on layer of hexagonal boron nitride (hBN) and GaTe or InTe monolayer. Using density functional theory, we investigate electronic and optical properties of those structures. Their moderate band gap and excellent absorption coefficient makes them ideal candidate for broad spectrum absorbers, covering all from part of IR to far UV spectrum, with particularly good absorption of UV light. The hBN layer, which can be beneficial for protection of sensitive GaTe and InTe, does not only preserve their optical properties but also enhances it by changing the band gap width and enhancing absorption in low-energy part of spectrum. Calculated binding energies prove that all three stacking types are possible to obtain experimentally, with H-top as the preferable stacking position. Moreover, it is shown that type of stacking does not affect any relevant properties and bandstructure does not reveal any significant change for each stacking type.
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Affiliation(s)
- A Šolajić
- Center for Solid State Physics and New Materials, Institute of Physics Belgrade, University of Belgrade, Pregrevica 118, 11080 Belgrade, Serbia
| | - J Pešić
- Center for Solid State Physics and New Materials, Institute of Physics Belgrade, University of Belgrade, Pregrevica 118, 11080 Belgrade, Serbia
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2
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Liu M, Yang S, Han M, Feng S, Wang GG, Dang L, Zou B, Cai Y, Sun H, Yu J, Han JC, Liu Z. Controlled Growth of Large-Sized and Phase-Selectivity 2D GaTe Crystals. Small 2021; 17:e2007909. [PMID: 33871163 DOI: 10.1002/smll.202007909] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/17/2020] [Revised: 02/08/2021] [Indexed: 06/12/2023]
Abstract
GaTe has recently attracted significant interest due to its direct bandgap and unique phase structure, which makes it a good candidate for optoelectronics. However, the controllable growth of large-sized monolayer and few-layer GaTe with tunable phase structures remains a great challenge. Here the controlled growth of large-sized GaTe with high quality, chemical uniformity, and good reproducibility is achieved through liquid-metal-assisted chemical vapor deposition method. By using liquid Ga, the rapid growth of 2D GaTe flakes with high phase-selectivity can be obtained due to its reduced reaction temperature. In addition, the method is used to synthesize many Ga-based 2D materials and their alloys, showing good universality. Raman spectra suggest that the as-grown GaTe own a relatively weak van der Waals interaction, where monoclinic GaTe displays highly-anisotropic optical properties. Furthermore, a p-n junction photodetector is fabricated using GaTe as a p-type semiconductor and 2D MoSe2 as a typical n-type semiconductor. The GaTe/MoSe2 heterostructure photodetector exhibits large photoresponsivity of 671.52 A W-1 and high photo-detectivity of 1.48 × 1010 Jones under illumination, owing to the enhanced light absorption and good quality of as-grown GaTe. These results indicate that 2D GaTe is a promising candidate for electronic and photoelectronic devices.
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Affiliation(s)
- Mingqiang Liu
- Shenzhen Key Laboratory for Advanced Materials, School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, P. R. China
| | - Shuo Yang
- Shenzhen Key Laboratory for Advanced Materials, School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, P. R. China
| | - Mao Han
- Shenzhen Key Laboratory for Advanced Materials, School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, P. R. China
| | - Simin Feng
- i-Lab, Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, 215123, P. R. China
| | - Gui-Gen Wang
- Shenzhen Key Laboratory for Advanced Materials, School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, P. R. China
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin, 150080, P. R. China
| | - Leyang Dang
- Shenzhen Key Laboratory for Advanced Materials, School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, P. R. China
| | - Bo Zou
- School of Science, Harbin Institute of Technology, Shenzhen, 518055, P. R. China
| | - Yawei Cai
- Shenzhen Key Laboratory for Advanced Materials, School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, P. R. China
| | - Huarui Sun
- School of Science, Harbin Institute of Technology, Shenzhen, 518055, P. R. China
| | - Jie Yu
- Shenzhen Key Laboratory for Advanced Materials, School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, P. R. China
| | - Jie-Cai Han
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin, 150080, P. R. China
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University (NTU), Singapore, 639798
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Tien LC, Shih YC. Morphology-Controlled Vapor Phase Growth and Characterization of One-Dimensional GaTe Nanowires and Two-Dimensional Nanosheets for Potential Visible-Light Active Photocatalysts. Nanomaterials (Basel) 2021; 11:nano11030778. [PMID: 33803827 PMCID: PMC8003267 DOI: 10.3390/nano11030778] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/23/2021] [Revised: 03/10/2021] [Accepted: 03/14/2021] [Indexed: 12/25/2022]
Abstract
Gallium telluride (GaTe) one-dimensional (1D) and two-dimensional (2D) materials have drawn much attention for high-performance optoelectronic applications because it possesses a direct bandgap for all thickness. We report the morphology-controlled vapor phase growth of 1D GaTe nanowires and 2D GaTe nanosheets by a simple physical vapor transport (PVT) approach. The surface morphology, crystal structure, phonon vibration modes, and optical property of samples were characterized and studied. The growth temperature is a key synthetic factor to control sample morphology. The 1D GaTe single crystal monoclinic nanowires were synthesized at 550 °C. The strong interlayer interaction and high surface migration of adatoms on c-sapphire enable the assembly of 1D nanowires into 2D nanosheet under 600 °C. Based on the characterization results demonstrated, we propose the van der Waals growth mechanism of 1D nanowires and 2D nanosheets. Moreover, the visible-light photocatalytic activity of 1D nanowires and 2D nanosheets was examined. Both 1D and 2D GaTe nanostructures exhibit visible-light active photocatalytic activity, suggesting that the GaTe nanostructures may be promising materials for visible light photocatalytic applications.
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Sorokin SV, Avdienko PS, Sedova IV, Kirilenko DA, Davydov VY, Komkov OS, Firsov DD, Ivanov SV. Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates. Materials (Basel) 2020; 13:E3447. [PMID: 32764315 DOI: 10.3390/ma13163447] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/29/2020] [Revised: 07/27/2020] [Accepted: 07/30/2020] [Indexed: 11/17/2022]
Abstract
Development of molecular beam epitaxy (MBE) of two-dimensional (2D) layered materials is an inevitable step in realizing novel devices based on 2D materials and heterostructures. However, due to existence of numerous polytypes and occurrence of additional phases, the synthesis of 2D films remains a difficult task. This paper reports on MBE growth of GaSe, InSe, and GaTe layers and related heterostructures on GaAs(001) substrates by using a Se valve cracking cell and group III metal effusion cells. The sophisticated self-consistent analysis of X-ray diffraction, transmission electron microscopy, and Raman spectroscopy data was used to establish the correlation between growth conditions, formed polytypes and additional phases, surface morphology and crystalline structure of the III–VI 2D layers. The photoluminescence and Raman spectra of the grown films are discussed in detail to confirm or correct the structural findings. The requirement of a high growth temperature for the fabrication of optically active 2D layers was confirmed for all materials. However, this also facilitated the strong diffusion of group III metals in III–VI and III–VI/II–VI heterostructures. In particular, the strong In diffusion into the underlying ZnSe layers was observed in ZnSe/InSe/ZnSe quantum well structures, and the Ga diffusion into the top InSe layer grown at ~450 °C was confirmed by the Raman data in the InSe/GaSe heterostructures. The results on fabrication of the GaSe/GaTe quantum well structures are presented as well, although the choice of optimum growth temperatures to make them optically active is still a challenge.
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Qian Q, Shen X, Luo D, Jia L, Kozina M, Li R, Lin MF, Reid AH, Weathersby S, Park S, Yang J, Zhou Y, Zhang K, Wang X, Huang S. Coherent Lattice Wobbling and Out-of-Phase Intensity Oscillations of Friedel Pairs Observed by Ultrafast Electron Diffraction. ACS Nano 2020; 14:8449-8458. [PMID: 32538617 DOI: 10.1021/acsnano.0c02643] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The inspection of Friedel's law in ultrafast electron diffraction (UED) is important to gain a comprehensive understanding of material atomic structure and its dynamic response. Here, monoclinic gallium telluride (GaTe), as a low-symmetry, layered crystal in contrast to many other 2D materials, is investigated by mega-electronvolt UED. Strong out-of-phase oscillations of Bragg peak intensities are observed for Friedel pairs, which does not obey Friedel's law. As evidenced by the preserved mirror symmetry and supported by both kinematic and dynamic scattering simulations, the intensity oscillations are provoked by the lowest-order longitudinal acoustic breathing phonon. Our results provide a generalized understanding of Friedel's law in UED and demonstrate that by designed misalignment of surface normal and primitive lattice vectors, coherent lattice wobbling and effective shear strain can be generated in crystal films by laser pulse excitation, which is otherwise hard to achieve and can be further utilized to dynamically tune and switch material properties.
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Affiliation(s)
- Qingkai Qian
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Xiaozhe Shen
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Duan Luo
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Lanxin Jia
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Michael Kozina
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Renkai Li
- Department of Engineering Physics, Tsinghua University, Beijing 100084, China
| | - Ming-Fu Lin
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Alexander H Reid
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Stephen Weathersby
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Suji Park
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Jie Yang
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Yu Zhou
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Kunyan Zhang
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Xijie Wang
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Shengxi Huang
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
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Chen Z, Zhang Y, Chu S, Sun R, Wang J, Chen J, Wei B, Zhang X, Zhou W, Shi Y, Wang Z. Grain Boundary Induced Ultralow Threshold Random Laser in a Single GaTe Flake. ACS Appl Mater Interfaces 2020; 12:23323-23329. [PMID: 32337969 DOI: 10.1021/acsami.0c03419] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Random lasing is a lasing phenomenon realized in random media, and it has attracted a great deal of attention in recent years. An essential requirement for strong random lasing is to achieve strong and recurrent scattering among grain boundaries of a disordered structure. Herein, we report a random laser (RL) based on individual polycrystalline GaTe microflakes (MFs) with a lasing threshold of 4.15 kW cm-2, about 1-2 orders of magnitude lower than that of the reported single GaN microwire random laser. The strongly enhanced light scattering and trapping benefit from the reduced grain size in the polycrystalline GaTe MF, resulting in a ultralow threshold. We also investigate the dependence of spatially localized cavities' dimension on the pumping intensity profile and temperature. The findings provide a feasible route to realize RL with a low threshold and small size, opening up a new avenue in fulfilling many potential optoelectronic applications of RL.
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Affiliation(s)
- Zuxin Chen
- Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
- International Iberian Nanotechnology Laboratory (INL), Av. Mestre Jose Veiga s/n, 4715-330 Braga, Portugal
| | - Yingjun Zhang
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science & Technology, Wuhan 430074, China
| | - Sheng Chu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou, 510275, China
| | - Rong Sun
- International Iberian Nanotechnology Laboratory (INL), Av. Mestre Jose Veiga s/n, 4715-330 Braga, Portugal
| | - Jun Wang
- Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
- International Iberian Nanotechnology Laboratory (INL), Av. Mestre Jose Veiga s/n, 4715-330 Braga, Portugal
| | - Jiapeng Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou, 510275, China
| | - Bin Wei
- International Iberian Nanotechnology Laboratory (INL), Av. Mestre Jose Veiga s/n, 4715-330 Braga, Portugal
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou, 510275, China
| | - Xin Zhang
- International Iberian Nanotechnology Laboratory (INL), Av. Mestre Jose Veiga s/n, 4715-330 Braga, Portugal
| | - Weihang Zhou
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science & Technology, Wuhan 430074, China
| | - Yumeng Shi
- Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Zhongchang Wang
- International Iberian Nanotechnology Laboratory (INL), Av. Mestre Jose Veiga s/n, 4715-330 Braga, Portugal
- School of Materials and Energy, Southwest University, Chongqing 400715, China
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Lu P, Lang J, Weng Z, Rahimi-Iman A, Wu H. Hybrid Structure of 2D Layered GaTe with Au Nanoparticles for Ultrasensitive Detection of Aromatic Molecules. ACS Appl Mater Interfaces 2018; 10:1356-1362. [PMID: 29220168 DOI: 10.1021/acsami.7b14121] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Owing to a complex monocline structure and high-density of defects in monocrystalline GaTe, the performance of GaTe-based electronic devices is considerably compromised. Yet, the defects' nature in GaTe could be a merit rather than a shortcoming in other realms. In our work, the density of defects in GaTe films is utilized for a facile decoration of Au nanoparticles (NPs), which allowed us to extend its application potential to the domain of surface enhanced Raman scattering (SERS) for the first time. Two-dimensional (2D) GaTe layered structures are prepared by mechanical exfoliation, and high-density Au NPs are synthesized by immersion of 2D GaTe in HAuCl4 aqueous solution. By varying the immersion time, the sizes and coverage rate of Au NPs on GaTe can be elaborately tuned. Thanks to the defect nature of GaTe, the maximum coverage amounts to 98%. The hereby achieved Au-NPs-2D-GaTe hybrid structure demonstrates outstanding properties as a superior SERS substrate for ultrasensitive detection of R6G aromatic molecules. Remarkably, the enhancement factor reaches up to 1.6 × 104, and the minimum detectable concentration is 10-11 M, undercutting that of recently reported Au-NPs-MoS2 SERS and Au-NPs-graphene SERS substrates which have a similar structure. With superior detection capability and facile preparation, Au-NPs-GaTe SERS substrates can become a perfect choice for the detection of aromatic molecules.
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Affiliation(s)
- Pengqi Lu
- Department of Physics and State Key Laboratory of Silicon Materials, Zhejiang University , Hangzhou 310027, P.R. China
| | - Jiawei Lang
- Department of Physics and State Key Laboratory of Silicon Materials, Zhejiang University , Hangzhou 310027, P.R. China
| | - Zeping Weng
- Department of Physics and State Key Laboratory of Silicon Materials, Zhejiang University , Hangzhou 310027, P.R. China
| | - Arash Rahimi-Iman
- Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg , 35032 Marburg, Germany
| | - Huizhen Wu
- Department of Physics and State Key Laboratory of Silicon Materials, Zhejiang University , Hangzhou 310027, P.R. China
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Li Q, Ma X, Liu H, Chen Z, Chen H, Chu S. Self-Organized Growth of Two-Dimensional GaTe Nanosheet on ZnO Nanowires for Heterojunctional Water Splitting Applications. ACS Appl Mater Interfaces 2017; 9:18836-18844. [PMID: 28525707 DOI: 10.1021/acsami.7b04199] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Epitaxial two-dimensional GaTe nanosheets on ZnO nanowires were routinely prepared via a two-step chemical vapor deposition procedure. The epitaxial relationship and growth mechanism of the GaTe/ZnO core/shell structures were explored and attributed to a layer-overlayer model. The hybrid structures increased the surface area and the favorable p-n heterojunction enhanced the charge separation for photoelectrochemical performance in water splitting. The above synergistic effects boosted the photocurrent density from -0.3 mA cm-2 for the pristine ZnO nanowires to -2.5 mA cm-2 for the core/shell GaTe/ZnO nanowires at -0.39 V vs RHE under the visible light irradiation. This highlights the promise for utilization of GaTe nanosheet/ZnO nanowires as efficient photoelectrocatalyst for water splitting.
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Affiliation(s)
- Qiuguo Li
- School of Electronics and Information Technology, Sun Yat-sen University , Guangzhou 510275, People's Republic of China
- State Key Laboratory for Optoelectronics Materials and Technology, Sun Yat-sen University , Guangzhou 510275, People's Republic of China
| | - Xinzhou Ma
- State Key Laboratory for Optoelectronics Materials and Technology, Sun Yat-sen University , Guangzhou 510275, People's Republic of China
- School of Materials Science and Engineering, Sun Yat-sen University , Guangzhou 510275, People's Republic of China
| | - Huiqiang Liu
- School of Electronics and Information Technology, Sun Yat-sen University , Guangzhou 510275, People's Republic of China
- State Key Laboratory for Optoelectronics Materials and Technology, Sun Yat-sen University , Guangzhou 510275, People's Republic of China
| | - Zuxin Chen
- School of Electronics and Information Technology, Sun Yat-sen University , Guangzhou 510275, People's Republic of China
- State Key Laboratory for Optoelectronics Materials and Technology, Sun Yat-sen University , Guangzhou 510275, People's Republic of China
| | - Hao Chen
- School of Electronics and Information Technology, Sun Yat-sen University , Guangzhou 510275, People's Republic of China
- State Key Laboratory for Optoelectronics Materials and Technology, Sun Yat-sen University , Guangzhou 510275, People's Republic of China
| | - Sheng Chu
- State Key Laboratory for Optoelectronics Materials and Technology, Sun Yat-sen University , Guangzhou 510275, People's Republic of China
- School of Materials Science and Engineering, Sun Yat-sen University , Guangzhou 510275, People's Republic of China
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9
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Wang F, Wang Z, Xu K, Wang F, Wang Q, Huang Y, Yin L, He J. Tunable GaTe-MoS2 van der Waals p-n Junctions with Novel Optoelectronic Performance. Nano Lett 2015; 15:7558-66. [PMID: 26469092 DOI: 10.1021/acs.nanolett.5b03291] [Citation(s) in RCA: 154] [Impact Index Per Article: 17.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
P-n junctions based on vertically stacked van der Waals (vdW) materials have attracted a great deal of attention and may open up unforeseen opportunities in electronics and optoelectronics. However, due to the lack of intrinsic p-type vdW materials, most previous studies generally adopted electrical gating, special electrode contacts, or chemical doping methods to realize p-n vdW junctions. GaTe is an intrinsic p-type vdW material with a relatively high charge density, and it has a direct band gap that is independent of thickness. Here, we report the construction of ultrathin and tunable p-GaTe/n-MoS2 vdW heterostructure with high photovoltaic and photodetecting performance. The rectification ratio, external quantum efficiency, and photoresponsivity are as high as 4 × 10(5), 61.68%, and 21.83 AW(-1), respectively. In particular, the detectivity is up to 8.4 × 10(13) Jones, which is even higher than commercial Si, InGaAs photodetectors. This study demonstrates the promising potential of p-GaTe/n-MoS2 heterostructures for next-generation electronic and optoelectronic devices.
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Affiliation(s)
- Feng Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology , Beijing 100190, China
- University of Chinese Academy of Sciences , No. 19A Yuquan Road, Beijing 100049, China
| | - Zhenxing Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology , Beijing 100190, China
| | - Kai Xu
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology , Beijing 100190, China
- University of Chinese Academy of Sciences , No. 19A Yuquan Road, Beijing 100049, China
| | - Fengmei Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology , Beijing 100190, China
- University of Chinese Academy of Sciences , No. 19A Yuquan Road, Beijing 100049, China
| | - Qisheng Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology , Beijing 100190, China
- University of Chinese Academy of Sciences , No. 19A Yuquan Road, Beijing 100049, China
| | - Yun Huang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology , Beijing 100190, China
- University of Chinese Academy of Sciences , No. 19A Yuquan Road, Beijing 100049, China
| | - Lei Yin
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology , Beijing 100190, China
- University of Chinese Academy of Sciences , No. 19A Yuquan Road, Beijing 100049, China
| | - Jun He
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology , Beijing 100190, China
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