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Alharbi SAR, Yu M. Crucial role of interfacial interaction in 2D polar SiGe/GeC heterostructures. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:215301. [PMID: 38364275 DOI: 10.1088/1361-648x/ad2a0a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/01/2023] [Accepted: 02/16/2024] [Indexed: 02/18/2024]
Abstract
The planar charge transfer is a distinctive characteristic of the two-dimensional (2D) polar materials. When such 2D polar materials are involved in vertical heterostructures (VHs), in addition to the van der Waals (vdW) interlayer interaction, the interfacial interaction triggered by the in-plane charge transfer will play a crucial role. To deeply understand such mechanism, we conducted a comprehensive theoretical study focusing on the structural stability and electronic properties of 2D polar VHs built by commensurate SiGe/GeC bilayers with four species ordering patterns (classified as a C-group with patterns I and II and a Ge-group with patterns III and IV, respectively). It was found that the commensurate SiGe/GeC VHs are mainly stabilized by interfacial interactions (including the electrostatic interlayer bonding, the vdW force, as well as thesp2/sp3orbital hybridization), with the Ge-group being the most energetically favorable than the C-group. A net charge redistribution occurs between adjacent layers, which is significant (∼0.23-0.25 e cell-1) in patterns II and IV, but slightly small (∼0.05-0.09 e cell-1) in patterns I and III, respectively, forming spontaneousp-nheterojunctions. Such interlayer charge transfer could also lead to a polarization in the interfacial region, with the electron depletion (accumulation) close to the GeC layer and the electron accumulation (depletion) close to the SiGe layer in the C-group (the Ge-group). This type of interface dipoles could induce a built-in electric field and help to promote photogenerated electrons (holes) migration. Furthermore, a semi-metal nature with a tiny direct band gap at the SiGe layer and a semiconducting nature at the GeC layer indicate that the commensurate SiG/GeC VHs possess a type-I band alignment of heterojunction and have a wide spectrum of light absorption capabilities, indicating its promising applications for enhancing light-matter interaction and interfacial engineering.
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Affiliation(s)
- Safia Abdullah R Alharbi
- Department of Physics and Astronomy, University of Louisville, Louisville, KY 40292, United States of America
- Department of Physics, College of Sciences, Al Imam Mohammad Ibn Saud Islamic University (IMISU), Riyadh 11623, Saudi Arabia
| | - Ming Yu
- Department of Physics and Astronomy, University of Louisville, Louisville, KY 40292, United States of America
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Tang K, Qi W, Wei Y, Ru G, Liu W. High-Throughput Calculation of Interlayer van der Waals Forces Validated with Experimental Measurements. RESEARCH 2022; 2022:9765121. [PMID: 35392429 PMCID: PMC8968625 DOI: 10.34133/2022/9765121] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/24/2021] [Accepted: 02/21/2022] [Indexed: 11/16/2022]
Abstract
Interlayer van der Waals interactions play an important role in two-dimensional (2D) materials on various occasions. The interlayer binding force is often directly measured and is considered more closely related to the exfoliation condition. However, a binding force database from accurate theoretical calculations does not yet exist. In this work, the critical interlayer binding force and energy are directly calculated for 230 2D materials, which exhibit divergent trends. A linear relationship that links the two quantities with the equilibrium interlayer distance is found and checked. Experiments are carried out for three different materials using atomic force microscopy. The measured forces show a consistent trend with the calculated results, and the estimated binding strengths are of the same order of magnitude as the predicted values. Our work can provide a reliable reference for interlayer adhesion studies and help establish accurate models of exfoliation processes.
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Affiliation(s)
- Kewei Tang
- State Key Laboratory of Solidification Processing, Center of Advanced Lubrication and Seal Materials, Northwestern Polytechnical University, Xi’an 710072, China
| | - Weihong Qi
- State Key Laboratory of Solidification Processing, Center of Advanced Lubrication and Seal Materials, Northwestern Polytechnical University, Xi’an 710072, China
| | - Yaru Wei
- State Key Laboratory of Solidification Processing, Center of Advanced Lubrication and Seal Materials, Northwestern Polytechnical University, Xi’an 710072, China
| | - Guoliang Ru
- State Key Laboratory of Solidification Processing, Center of Advanced Lubrication and Seal Materials, Northwestern Polytechnical University, Xi’an 710072, China
| | - Weimin Liu
- State Key Laboratory of Solidification Processing, Center of Advanced Lubrication and Seal Materials, Northwestern Polytechnical University, Xi’an 710072, China
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
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Tasnim KJ, Alharbi SAR, Musa MRK, Lovell SH, Akridge ZA, Yu M. Insight into the stacking and the species-ordering dependences of interlayer bonding in SiC/GeC polar heterostructures. NANOTECHNOLOGY 2022; 33:155706. [PMID: 34972095 DOI: 10.1088/1361-6528/ac475b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2021] [Accepted: 12/30/2021] [Indexed: 06/14/2023]
Abstract
Two-dimensional (2D) polar materials experience an in-plane charge transfer between different elements due to their electron negativities. When they form vertical heterostructures, the electrostatic force triggered by such charge transfer plays an important role in the interlayer bonding beyond van der Waals (vdW) interaction. Our comprehensive first principle study on the structural stability of the 2D SiC/GeC hybrid bilayer heterostructure has found that the electrostatic interlayer interaction can induce theπ-πorbital hybridization between adjacent layers under different stacking and out-of-plane species ordering, with strong hybridization in the cases of Si-C and C-Ge species orderings but weak hybridization in the case of the C-C ordering. In particular, the attractive electrostatic interlayer interaction in the cases of Si-C and C-Ge species orderings mainly controls the equilibrium interlayer distance and the vdW interaction makes the system attain a lower binding energy. On the contrary, the vdW interaction mostly controls the equilibrium interlayer distance in the case of the C-C species ordering and the repulsive electrostatic interlayer force has less effect. Interesting finding is that the band structure of the SiC/GeC hybrid bilayer is sensitive to the layer-layer stacking and the out-of-plane species ordering. An indirect band gap of 2.76 eV (or 2.48 eV) was found under the AA stacking with Si-C ordering (or under the AB stacking with C-C ordering). While a direct band gap of 2.00-2.88 eV was found under other stacking and species orderings, demonstrating its band gap tunable feature. Furthermore, there is a charge redistribution in the interfacial region leading to a built-in electric field. Such field will separate the photo-generated charge carriers in different layers and is expected to reduce the probability of carrier recombination, and eventually give rise to the electron tunneling between layers.
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Affiliation(s)
- Kazi Jannatul Tasnim
- Department of Physics and Astronomy, University of Louisville, Louisville, KY 40292, United States of America
| | - Safia Abdullah R Alharbi
- Department of Physics and Astronomy, University of Louisville, Louisville, KY 40292, United States of America
| | - Md Rajib Khan Musa
- Department of Physics and Astronomy, University of Louisville, Louisville, KY 40292, United States of America
| | - Simon Hosch Lovell
- Department of Physics and Astronomy, University of Louisville, Louisville, KY 40292, United States of America
| | - Zachary Alexander Akridge
- Department of Physics and Astronomy, University of Louisville, Louisville, KY 40292, United States of America
| | - Ming Yu
- Department of Physics and Astronomy, University of Louisville, Louisville, KY 40292, United States of America
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Chen JL, Wang XX, Shi LJ. Electric field controlled type-I and type-II conversion of BP/SnS van der Waals heterostructure. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:265301. [PMID: 33906168 DOI: 10.1088/1361-648x/abfc15] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2021] [Accepted: 04/27/2021] [Indexed: 06/12/2023]
Abstract
Type-I heterostructure, in which electrons and holes are confined in same region, is widely used in light emitting diodes and semiconductor lasers. Type-II heterostructure is widely used in photovoltaic devices because of its excellent spatial separation property of electrons and holes. Can we integrate photovoltaic, photoelectric properties with luminescent property in one device? Here we report a van der Waals heterostructure formed by black phosphorus (BP) and SnS monolayers. It is expected to realize these functions in one device. By first-principles methods, the structural stability, electronic properties and optical properties are investigated. It was found that the BP/SnS bilayer is type-II heterostructure with an indirect bandgap of 0.56 eV. Thep-like character of the band edge in BP/SnS vdW heterostructure makes it to be an excellent optoelectronic material. The type-II stability of the system can be improved by applying a negative electric field. However, when the positive electric field is bigger than 0.1 V Å-1, the system begins to transform from type-II to type I. Therefore, by adding a gate voltage the bandgap and band alignment of this system can be controlled. The photovoltaic and photoelectric properties can be integrated in one device based on this heterostructure.
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Affiliation(s)
- Jia-Le Chen
- Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Zhongguancun South Street, Haidian District, Beijing 100081, People's Republic of China
| | - Xin-Xin Wang
- Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Zhongguancun South Street, Haidian District, Beijing 100081, People's Republic of China
| | - Li-Jie Shi
- Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Zhongguancun South Street, Haidian District, Beijing 100081, People's Republic of China
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Alam Q, Muhammad S, Idrees M, Hieu NV, Binh NTT, Nguyen C, Amin B. First-principles study of the electronic structures and optical and photocatalytic performances of van der Waals heterostructures of SiS, P and SiC monolayers. RSC Adv 2021; 11:14263-14268. [PMID: 35423989 PMCID: PMC8697698 DOI: 10.1039/d0ra10808a] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/24/2020] [Accepted: 03/15/2021] [Indexed: 11/26/2022] Open
Abstract
Designing van der Waals (vdW) heterostructures of two-dimensional materials is an efficient way to realize amazing properties as well as open up opportunities for applications in solar energy conversion, nanoelectronic and optoelectronic devices. The electronic structures and optical and photocatalytic properties of SiS, P and SiC van der Waals (vdW) heterostructures are investigated by (hybrid) first-principles calculations. Both binding energy and thermal stability spectra calculations confirm the stability of these heterostructures. Similar to the corresponding parent monolayers, SiS–P (SiS–SiC) vdW heterostructures are found to be indirect type-II bandgap semiconductors. Furthermore, absorption spectra are calculated to understand the optical behavior of these systems, where the lowest energy transitions lie in the visible region. The valence and conduction band edges straddle the standard redox potentials of SiS, P and SiC vdW heterostructures, making them promising candidates for water splitting in acidic solution. The electronic structures and optical and photocatalytic properties of SiS, P and SiC van der Waals (vdW) heterostructures are investigated by (hybrid) first-principles calculations.![]()
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Affiliation(s)
- Qaisar Alam
- Department of Physics, Hazara University Mansehra Pakistan
| | - S Muhammad
- Department of Physics, Hazara University Mansehra Pakistan
| | - M Idrees
- Department of Physics, Hazara University Mansehra Pakistan
| | - Nguyen V Hieu
- Faculty of Physics, The University of Da Nang - University of Science and Education Da Nang Vietnam
| | - Nguyen T T Binh
- Department of Physics, Quang Binh University Quang Binh Vietnam
| | - C Nguyen
- Institute of Research and Development, Duy Tan University Da Nang 550000 Vietnam .,Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
| | - Bin Amin
- Department of Physics, Abbottabad University of Science and Technology Abbottabad 22010 Pakistan
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Wang Z, Zhang Y, Wei X, Guo T, Fan J, Ni L, Weng Y, Zha Z, Liu J, Tian Y, Li T, Duan L. Type-II tunable SiC/InSe heterostructures under an electric field and biaxial strain. Phys Chem Chem Phys 2020; 22:9647-9655. [PMID: 32328602 DOI: 10.1039/d0cp00291g] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/25/2023]
Abstract
In this study, first-principles calculations based on the density functional theory (DFT) are exploited to investigate the electronic capabilities of SiC/InSe heterostructures. According to our results, the SiC/InSe heterostructure possesses an inherent type-II band alignment, which displays a noticeable Stark effect on the band gap under a stable electric field. Besides, the heterostructure exhibits a low carrier effective mass and a narrower band gap when it is subject to tensile strain. More interestingly, the transition from an indirect to a direct band gap occurs when 8% of compressive strain is applied. Taken together, findings in this study indicate that the SiC/InSe heterostructure opens up a new avenue for its application in the fields of optoelectronics and microelectronics.
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Affiliation(s)
- Zhu Wang
- School of Materials Science and Engineering, Chang'an University, Xi'an, 710064, China.
| | - Yan Zhang
- School of Materials Science and Engineering, Chang'an University, Xi'an, 710064, China.
| | - Xing Wei
- School of Materials Science and Engineering, Chang'an University, Xi'an, 710064, China.
| | - Tingting Guo
- School of Materials Science and Engineering, Chang'an University, Xi'an, 710064, China.
| | - Jibin Fan
- School of Materials Science and Engineering, Chang'an University, Xi'an, 710064, China.
| | - Lei Ni
- School of Materials Science and Engineering, Chang'an University, Xi'an, 710064, China.
| | - Yijun Weng
- School of Materials Science and Engineering, Chang'an University, Xi'an, 710064, China.
| | - Zhengdi Zha
- School of Materials Science and Engineering, Chang'an University, Xi'an, 710064, China.
| | - Jian Liu
- School of Physics, Shandong University, Jinan 250100, China
| | - Ye Tian
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Ting Li
- School of Materials Science and Engineering, Chang'an University, Xi'an, 710064, China.
| | - Li Duan
- School of Materials Science and Engineering, Chang'an University, Xi'an, 710064, China.
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Bolognesi M, Brucale M, Lorenzoni A, Prescimone F, Moschetto S, Korolkov VV, Baldoni M, Serrano-Ruiz M, Caporali M, Mercuri F, Besley E, Muccini M, Peruzzini M, Beton PH, Toffanin S. Epitaxial multilayers of alkanes on two-dimensional black phosphorus as passivating and electrically insulating nanostructures. NANOSCALE 2019; 11:17252-17261. [PMID: 31317153 DOI: 10.1039/c9nr01155b] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Mechanically exfoliated two-dimensional (2D) black phosphorus (bP) is epitaxially terminated by monolayers and multilayers of tetracosane, a linear alkane, to form a weakly interacting van der Waals heterostructure. Atomic force microscopy (AFM) and computational modelling show that epitaxial domains of alkane chains are ordered in parallel lamellae along the principal crystalline axis of bP, and this order is extended over a few layers above the interface. Epitaxial alkane multilayers delay the oxidation of 2D bP in air by 18 hours, in comparison to 1 hour for bare 2D bP, and act as an electrical insulator, as demonstrated using electrostatic force microscopy. The presented heterostructure is a technologically relevant insulator-semiconductor model system that can open the way to the use of 2D bP in micro- and nanoelectronic, optoelectronic and photonic applications.
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Affiliation(s)
- Margherita Bolognesi
- Istituto per lo Studio dei Materiali Nanostrutturati (ISMN) - Consiglio Nazionale delle Ricerche (CNR), Via P. Gobetti 101, 40129 Bologna, Italy.
| | - Marco Brucale
- Istituto per lo Studio dei Materiali Nanostrutturati (ISMN) - Consiglio Nazionale delle Ricerche (CNR), Via P. Gobetti 101, 40129 Bologna, Italy.
| | - Andrea Lorenzoni
- Istituto per lo Studio dei Materiali Nanostrutturati (ISMN) - Consiglio Nazionale delle Ricerche (CNR), Via P. Gobetti 101, 40129 Bologna, Italy.
| | - Federico Prescimone
- Istituto per lo Studio dei Materiali Nanostrutturati (ISMN) - Consiglio Nazionale delle Ricerche (CNR), Via P. Gobetti 101, 40129 Bologna, Italy.
| | - Salvatore Moschetto
- Istituto per lo Studio dei Materiali Nanostrutturati (ISMN) - Consiglio Nazionale delle Ricerche (CNR), Via P. Gobetti 101, 40129 Bologna, Italy.
| | - Vladimir V Korolkov
- School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK
| | - Matteo Baldoni
- Istituto per lo Studio dei Materiali Nanostrutturati (ISMN) - Consiglio Nazionale delle Ricerche (CNR), Via P. Gobetti 101, 40129 Bologna, Italy.
| | - Manuel Serrano-Ruiz
- Istituto di Chimica dei Composti Organometallici (ICCOM) - Consiglio Nazionale delle Ricerche (CNR), Via Madonna del Piano 10, 50019 Sesto Fiorentino, Florence, Italy
| | - Maria Caporali
- Istituto di Chimica dei Composti Organometallici (ICCOM) - Consiglio Nazionale delle Ricerche (CNR), Via Madonna del Piano 10, 50019 Sesto Fiorentino, Florence, Italy
| | - Francesco Mercuri
- Istituto per lo Studio dei Materiali Nanostrutturati (ISMN) - Consiglio Nazionale delle Ricerche (CNR), Via P. Gobetti 101, 40129 Bologna, Italy.
| | - Elena Besley
- School of Chemistry, University of Nottingham, Nottingham NG7 2RD, UK
| | - Michele Muccini
- Istituto per lo Studio dei Materiali Nanostrutturati (ISMN) - Consiglio Nazionale delle Ricerche (CNR), Via P. Gobetti 101, 40129 Bologna, Italy.
| | - Maurizio Peruzzini
- Istituto di Chimica dei Composti Organometallici (ICCOM) - Consiglio Nazionale delle Ricerche (CNR), Via Madonna del Piano 10, 50019 Sesto Fiorentino, Florence, Italy
| | - Peter H Beton
- School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK
| | - Stefano Toffanin
- Istituto per lo Studio dei Materiali Nanostrutturati (ISMN) - Consiglio Nazionale delle Ricerche (CNR), Via P. Gobetti 101, 40129 Bologna, Italy.
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Yang Y, Wang Z. A two-dimensional MoS2/C3N broken-gap heterostructure, a first principles study. RSC Adv 2019; 9:19837-19843. [PMID: 35519410 PMCID: PMC9065378 DOI: 10.1039/c9ra02935d] [Citation(s) in RCA: 21] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/19/2019] [Accepted: 06/20/2019] [Indexed: 12/12/2022] Open
Abstract
van der Waals (vdW) heterojunctions are of interest in two-dimensional electronic and optoelectronic devices. In this work, first-principles calculations were used to study the atomic and electronic properties of the MoS2/C3N vdW heterojunction. The results show that there is no overlap of the band gaps for the MoS2 and C3N monolayers in the heterojunction, indicating the MoS2/C3N vdW heterostructure has a type III alignment. The MoS2/C3N vdW heterostructure is a broken-gap heterojunction. The effects of biaxial strain and external electric field on the band structure of the vdW heterostructure were also investigated. The alignment type cannot be changed, but the band overlap can be tuned. The present work reveals that the MoS2/C3N heterostructures are quite favorable for applications in tunneling devices based on the broken-gap heterostructures. van der Waals (vdW) heterojunctions are of interest in two-dimensional electronic and optoelectronic devices.![]()
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Affiliation(s)
- Yaxiao Yang
- Center for Public Security Technology
- School of Electronic Science and Engineering
- University of Electronic Science and Technology of China
- Chengdu
- China
| | - Zhiguo Wang
- Center for Public Security Technology
- School of Electronic Science and Engineering
- University of Electronic Science and Technology of China
- Chengdu
- China
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