Inkjet-printed graphene Hall mobility measurements and low-frequency noise characterization

A New Back-End-Of-Line Ferroelectric Field-Effect Transistor Platform via Laser Processing

The discovery of ferroelectricity in hafnia-based materials has revitalized interest in realizing ferroelectric field-effect transistors (FeFETs) due to its compatibility with modern microelectronics. Furthermore, low-temperature processing by atomic layer deposition offers promise for realizing monolithic three-dimensional (M3D) integration toward energy- and area-efficient computing paradigms. However, integrating ferroelectrics with channel materials in FeFETs for M3D integration remains challenging due to the dual requirement of a high-quality ferroelectric-channel interface and low-power operation, all while maintaining back-end-of-line (BEOL)-compatible fabrication temperatures. Recent studies on 2D semiconductors and metal oxide channels highlight these challenges. Polycrystalline silicon (poly-Si), a channel material long integrated into the semiconductor industry, presents a promising alternative; however, its high fabrication temperature has hindered its applications to M3D integration. To overcome this challenge, we demonstrates a BEOL-compatible FeFET platform using poly-Si channels fabricated via locally-confined laser thermal processing and hafnia-based ferroelectrics by low-temperature atomic layer deposition with wafer-scale uniformity. The local nature of the laser processing mitigates the trade-off between the high-temperature crystallization for the quality of the interface and BEOL thermal budget constraints. The laser-processed FeFETs boast the largest effective memory widow for all BEOL-compatible FeFETs. Moreover, the fabricated FeFETs are integrated into wafer-scale synaptic arrays for neuromorphic computing, achieving record-high energy efficiency. Therefore, this work establishes a promising BEOL-compatible FeFET materials platform toward M3D integration.

From Printed Devices to Vertically Stacked, 3D Flexible Hybrid Systems

The pursuit of miniaturized Si electronics has revolutionized computing and communication. During recent years, the value addition in electronics has also been achieved through printing, flexible and stretchable electronics form factors, and integration over areas larger than wafer size. Unlike Si semiconductor manufacturing which takes months from tape-out to wafer production, printed electronics offers greater flexibility and fast-prototyping capabilities with lesser resources and waste generation. While significant advances have been made with various types of printed sensors and other passive devices, printed circuits still lag behind Si-based electronics in terms of performance, integration density, and functionality. In this regard, recent advances using high-resolution printing coupled with the use of high mobility materials and device engineering, for both in-plane and out-of-plane integration, raise hopes. This paper focuses on the progress in printed electronics, highlighting emerging printing technologies and related aspects such as resource efficiency, environmental impact, integration scale, and the novel functionalities enabled by vertical integration of printed electronics. By highlighting these advances, this paper intends to reveal the future promise of printed electronics as a sustainable and resource-efficient route for realizing high-performance integrated circuits and systems.

Biocompatible 2D Material Inks Enabled by Supramolecular Chemistry: From Synthesis to Applications

ConspectusThe emergence of two-dimensional (2D) materials, such as graphene, transition-metal dichalcogenides (TMDs), and hexagonal boron nitride (h-BN), has sparked significant interest due to their unique physicochemical, optical, electrical, and mechanical properties. Furthermore, their atomically thin nature enables mechanical flexibility, high sensitivity, and simple integration onto flexible substrates, such as paper and plastic.The surface chemistry of a nanomaterial determines many of its properties, such as its chemical and catalytic activity. The electronic properties can also be modified by surface chemistry through changes in charge transfer or by the presence of surface states. Surface defects and functional groups can act as trap sites for excitons, hence affecting the optical properties. Furthermore, surface chemistry determines the stability and dispersibility of nanomaterials in colloidal dispersions as well as their biocompatibility and toxicity. In addition, the surface chemistry dictates how nanomaterials interact with biological systems, influencing cellular uptake, immune response, and biodistribution, to name a few examples. It is, therefore, crucial to be able to produce 2D materials with tunable surface chemistry to match target applications.Because of their dimensionality, 2D materials can be easily functionalized with noncovalent and covalent approaches. This review delves into the role of supramolecular chemistry, which is based on noncovalent interactions, in achieving stable and highly concentrated water-based dispersions of 2D materials with specific surface chemistry.In particular, we provide an overview of the recent progress made by our group in the field of solution-processed 2D materials produced by liquid-phase exfoliation with pyrene derivatives used as supramolecular receptors. We highlight the relationship between the structure of the pyrene derivative stabilizer and the concentration, stability, and lateral size and thickness distributions of the produced nanosheets. Subsequently, we give a short overview of the applications enabled by the supramolecular approach in printed electronics, sensing, bioelectronics, and in the biomedical field. We show that the careful design of the pyrene derivative enables us to achieve excellent stability of the material in the cellular medium, which is essential to accurately assess biological effects. We also highlight seminal case studies on the use of cationic graphene in the therapeutics of lysosomal storage disorders, and on the use of TMD nanosheets for trained immunity and as immune-compatible nanoplatforms, traceable at the single-cell and tissue (suborgan) levels.This Account aims to provide a comprehensive guide for readers on the potential of the supramolecular approach for the design of 2D material dispersions with tailored surface chemistry. This approach is expected to be extremely attractive for many applications, from tissue engineering to energy storage devices, so we hope that this Account will drive further efforts and advancements in this field by ultimately leading to the integration of solution-processed 2D materials made by supramolecular chemistry into practical applications.

Production of Ultrathin and High-Quality Nanosheet Networks via Layer-by-Layer Assembly at Liquid-Liquid Interfaces

Solution-processable 2D materials are promising candidates for a range of printed electronics applications. Yet maximizing their potential requires solution-phase processing of nanosheets into high-quality networks with carrier mobility (μNet) as close as possible to that of individual nanosheets (μNS). In practice, the presence of internanosheet junctions generally limits electronic conduction, such that the ratio of junction resistance (RJ) to nanosheet resistance (RNS), determines the network mobility via μNS/μNet ≈ RJ/RNS + 1. Hence, achieving RJ/RNS < 1 is a crucial step for implementation of 2D materials in printed electronics applications. In this work, we utilize an advanced liquid-interface deposition process to maximize nanosheet alignment and network uniformity, thus reducing RJ. We demonstrate the approach using graphene and MoS2 as model materials, achieving low RJ/RNS values of 0.5 and 0.2, respectively. The resultant graphene networks show a high conductivity of σNet = 5 × 104 S/m while our semiconducting MoS2 networks demonstrate record mobility of μNet = 30 cm2/(V s), both at extremely low network thickness (tNet < 10 nm). Finally, we show that the deposition process is compatible with nonlayered quasi-2D materials such as silver nanosheets (AgNS), achieving network conductivity close to bulk silver for networks <100 nm-thick.

Quantum Nature of Charge Transport in Inkjet-Printed Graphene Revealed in High Magnetic Fields up to 60T

Inkjet-printing of graphene, iGr, provides an alternative route for the fabrication of highly conductive and flexible graphene films for use in devices. However, the contribution of quantum phenomena associated with 2D single layer graphene, SLG, to the charge transport in iGr is yet to be explored. Here, the first magneto-transport study of iGr in high magnetic fields up to 60 T is presented. The observed quantum phenomena, such as weak localization and negative magnetoresistance, are strongly affected by the thickness of the iGr film and can be explained by a combination of intra- and inter-flake classical and quantum charge transport. The quantum nature of carrier transport in iGr is revealed using temperature, electric field, and magnetic field dependences of the iGr conductivity. These results are relevant for the exploitation of inkjet deposition of graphene, which is of particular interest for additive manufacturing and 3D printing of flexible and wearable electronics. It is shown that printed nanostructures enable ensemble averaging of quantum interference phenomena within a single device, thereby facilitating comparison between experiment and underlying statistical models of electron transport.

Layer-by-Layer Inkjet-Printed Manganese Oxide Nanosheets on Graphene for High-Performance Flexible Supercapacitors

The widespread adoption of wearable, movable, and implantable smart devices has sparked the evolution of flexible, miniaturized power supplies. High-resolution inkjet printing of flexible microsupercapacitor (μSC) electrodes is a fast, inexpensive, and waste-free alternative manufacturing technology. In this work, a 2D birnessite-type manganese dioxide (δ-MnO2) water-based ink is used to print 10-25 layers of δ-MnO2 symmetrically on a preprinted interdigitated cell consisting of 10 layers of electrochemically exfoliated graphene (EEG). The cell with 10 printed layers of δ-MnO2 achieved the highest specific capacitance, energy density, and power density of 0.44 mF cm-2, 0.045 μW h cm-2, and 0.0012 mW cm-2, respectively. Since inkjet-printing technology supports μSC manufacturing with parallel/series connectivity, four cells were used to study and improve the potential window and capacitance that can be used to construct μSC arrays as power banks. This work provides the first approach for designing an inkjet-printed interdigitated hybrid cell based on δ-MnO2@EEG that could be a versatile candidate for the large-scale production of flexible and printable electronic devices for energy storage.

Multi-scale simulations of two dimensional material based devices: the NanoTCAD ViDES suite

NanoTCAD ViDES (Versatile DEvice Simulator) is an open-source suite of computing codes aimed at assessing the operation and the performance of nanoelectronic devices. It has served the computational nanoelectronic community for almost two decades and it is freely available to researchers around the world in its website (http://vides.nanotcad.com), being employed in hundreds of works by many electronic device simulation groups worldwide. We revise the code structure and its main modules and we present the new features directed towards (i) multi-scale approaches exploiting ab-initio electron-structure calculations, aiming at the exploitation of new physics in electronic devices, (ii) the inclusion of arbitrary heterostructures of layered materials to devise original device architectures and operation, and (iii) the exploration of novel low-cost, green technologies in the mesoscopic scale, as, e.g. printed electronics.

Etch and Print: Graphene-Based Diodes for Silicon Technology

The graphene-silicon junction is one of the simplest conceivable interfaces in graphene-integrated semiconductor technology that can lead to the development of future generation of electronic and optoelectronic devices. However, graphene's integration is currently expensive and time-consuming and shows several challenges in terms of large-scale device fabrication, effectively preventing the possibility of implementing this technology into industrial processes. Here, we show a simple and cost-effective fabrication technique, based on inkjet printing, for the realization of printed graphene-silicon rectifying devices. The printed graphene-silicon diodes show an ON/OFF ratio higher than 3 orders of magnitude and a significant photovoltaic effect, resulting in a fill factor of ∼40% and a photocurrent efficiency of ∼2%, making the devices suitable for both electronic and optoelectronic applications. Finally, we demonstrate large-area pixeled photodetectors and compatibility with back-end-of-line fabrication processes.

Large-Area Thermal Distribution Sensor Based on Multilayer Graphene Ink

Emergent applications in wearable electronics require inexpensive sensors suited to scalable manufacturing. This work demonstrates a large-area thermal sensor based on distributed thermocouple architecture and ink-based multilayer graphene film. The proposed device combines the exceptional mechanical properties of multilayer graphene nanocomposite with the reliability and passive sensing performance enabled by thermoelectrics. The Seebeck coefficient of the spray-deposited films revealed an inverse thickness dependence with the largest value of 44.7 μV K-1 at 78 nm, which makes thinner films preferable for sensor applications. Device performance was demonstrated by touch sensing and thermal distribution mapping-based shape detection. Sensor output voltage in the latter application was on the order of 300 μV with a signal-to-noise ratio (SNR) of 35, thus enabling accurate detection of objects of different shapes and sizes. The results imply that films based on multilayer graphene ink are highly suitable to thermoelectric sensing applications, while the ink phase enables facile integration into existing fabrication processes.

Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper

Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging from wearable electronics to smart packaging. Here we report high-performance MoS2 field-effect transistors on paper fabricated with a "channel array" approach, combining the advantages of two large-area techniques: chemical vapor deposition and inkjet-printing. The first allows the pre-deposition of a pattern of MoS2; the second, the printing of dielectric layers, contacts, and connections to complete transistors and circuits fabrication. Average ION/IOFF of 8 × 103 (up to 5 × 104) and mobility of 5.5 cm2 V-1 s-1 (up to 26 cm2 V-1 s-1) are obtained. Fully functional integrated circuits of digital and analog building blocks, such as logic gates and current mirrors, are demonstrated, highlighting the potential of this approach for ubiquitous electronics on paper.

Elucidating Charge Transport Mechanisms in Cellulose-Stabilized Graphene Inks

Solution-processed graphene inks that use ethyl cellulose as a polymer stabilizer are blade-coated into large-area thin films. Following blade-coating, the graphene thin films are cured to pyrolyze the cellulosic polymer, leaving behind an sp2-rich amorphous carbon residue that serves as a binder in addition to facilitating charge transport between graphene flakes. Systematic charge transport measurements, including temperature-dependent Hall effect and non-contact microwave resonant cavity characterization, reveal that the resulting electrically percolating graphene thin films possess high mobility (≈ 160 cm2 V-1 s-1), low energy gap, and thermally activated charge transport, which develop weak localization behavior at cryogenic temperatures.