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Walter LS, Axt A, Borchert JW, Kammerbauer T, Winterer F, Lenz J, Weber SAL, Weitz RT. Revealing and Controlling Energy Barriers and Valleys at Grain Boundaries in Ultrathin Organic Films. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2200605. [PMID: 35905481 DOI: 10.1002/smll.202200605] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2022] [Revised: 07/11/2022] [Indexed: 06/15/2023]
Abstract
In organic electronics, local crystalline order is of critical importance for the charge transport. Grain boundaries between molecularly ordered domains are generally known to hamper or completely suppress charge transfer and detailed knowledge of the local electronic nature is critical for future minimization of such malicious defects. However, grain boundaries are typically hidden within the bulk film and consequently escape observation or investigation. Here, a minimal model system in form of monolayer-thin films with sub-nm roughness of a prototypical n-type organic semiconductor is presented. Since these films consist of large crystalline areas, the detailed energy landscape at single grain boundaries can be studied using Kelvin probe force microscopy. By controlling the charge-carrier density in the films electrostatically, the impact of the grain boundaries on charge transport in organic devices is modeled. First, two distinct types of grain boundaries are identified, namely energetic barriers and valleys, which can coexist within the same thin film. Their absolute height is found to be especially pronounced at charge-carrier densities below 1012 cm- 2 -the regime at which organic solar cells and light emitting diodes typically operate. Finally, processing conditions by which the type or energetic height of grain boundaries can be controlled are identified.
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Affiliation(s)
- Lisa S Walter
- Faculty of Physics, Ludwig-Maximilians-Universität München, 80539, Munich, Germany
- I. Institute of Physics, Georg-August-Universität Göttingen, 37077, Göttingen, Germany
| | - Amelie Axt
- Max Planck Institute for Polymer Research, 55128, Mainz, Germany
| | - James W Borchert
- I. Institute of Physics, Georg-August-Universität Göttingen, 37077, Göttingen, Germany
| | - Theresa Kammerbauer
- Faculty of Physics, Ludwig-Maximilians-Universität München, 80539, Munich, Germany
| | - Felix Winterer
- Faculty of Physics, Ludwig-Maximilians-Universität München, 80539, Munich, Germany
| | - Jakob Lenz
- Faculty of Physics, Ludwig-Maximilians-Universität München, 80539, Munich, Germany
| | - Stefan A L Weber
- Max Planck Institute for Polymer Research, 55128, Mainz, Germany
- Institute of Physics, Johannes Gutenberg-Universität Mainz, 55122, Mainz, Germany
| | - R Thomas Weitz
- Faculty of Physics, Ludwig-Maximilians-Universität München, 80539, Munich, Germany
- I. Institute of Physics, Georg-August-Universität Göttingen, 37077, Göttingen, Germany
- Center for Nanoscience (CeNS), Ludwig-Maximilians-Universität München, 80539, Munich, Germany
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Kasuya N, Tsurumi J, Okamoto T, Watanabe S, Takeya J. Two-dimensional hole gas in organic semiconductors. NATURE MATERIALS 2021; 20:1401-1406. [PMID: 34489565 DOI: 10.1038/s41563-021-01074-4] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/03/2020] [Accepted: 07/05/2021] [Indexed: 05/06/2023]
Abstract
A highly conductive metallic gas that is quantum mechanically confined at a solid-state interface is an ideal platform to explore non-trivial electronic states that are otherwise inaccessible in bulk materials. Although two-dimensional electron gases have been realized in conventional semiconductor interfaces, examples of two-dimensional hole gases, the counterpart to the two-dimensional electron gas, are still limited. Here we report the observation of a two-dimensional hole gas in solution-processed organic semiconductors in conjunction with an electric double layer using ionic liquids. A molecularly flat single crystal of high-mobility organic semiconductors serves as a defect-free interface that facilitates two-dimensional confinement of high-density holes. A remarkably low sheet resistance of 6 kΩ and high hole-gas density of 1014 cm-2 result in a metal-insulator transition at ambient pressure. The measured degenerate holes in the organic semiconductors provide an opportunity to tailor low-dimensional electronic states using molecularly engineered heterointerfaces.
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Affiliation(s)
- Naotaka Kasuya
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Japan
- AIST-UTokyo Advanced Operando-Measurement Technology Open Innovation laboratory (OPERAND-OIL), National Institute of Advanced Industrial Science and Technology (AIST), Kashiwa, Japan
| | - Junto Tsurumi
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Japan
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Japan
| | - Toshihiro Okamoto
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Japan
- AIST-UTokyo Advanced Operando-Measurement Technology Open Innovation laboratory (OPERAND-OIL), National Institute of Advanced Industrial Science and Technology (AIST), Kashiwa, Japan
- Precursory Research For Embryonic Science and Technology (PRESTO), Japan Science and Technology Agency (JST), Kawaguchi, Japan
| | - Shun Watanabe
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Japan.
- AIST-UTokyo Advanced Operando-Measurement Technology Open Innovation laboratory (OPERAND-OIL), National Institute of Advanced Industrial Science and Technology (AIST), Kashiwa, Japan.
| | - Jun Takeya
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Japan.
- AIST-UTokyo Advanced Operando-Measurement Technology Open Innovation laboratory (OPERAND-OIL), National Institute of Advanced Industrial Science and Technology (AIST), Kashiwa, Japan.
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Japan.
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Deng W, Xiao Y, Lu B, Zhang L, Xia Y, Zhu C, Zhang X, Guo J, Zhang X, Jie J. Water-Surface Drag Coating: A New Route Toward High-Quality Conjugated Small-Molecule Thin Films with Enhanced Charge Transport Properties. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2005915. [PMID: 33336501 DOI: 10.1002/adma.202005915] [Citation(s) in RCA: 28] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2020] [Revised: 10/27/2020] [Indexed: 06/12/2023]
Abstract
Electronic properties of organic semiconductor (OSC) thin films are largely determined by their morphologies and crystallinities. However, solution-processed conjugated small-molecule OSC thin films usually exhibit abundant grain boundaries and impure grain orientations because of complex fluid dynamics during solution coating. Here, a novel methodology, water-surface drag coating, is demonstrated to fabricate high-quality OSC thin films with greatly enhanced charge transport properties. This method utilizes the water surface to alter the evaporation dynamics of solution to enlarge the grain size, and a unique drag-coating process to achieve the unidirectional growth of organic crystals. Using 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (Dif-TES-ADT) as an example, thin films with millimeter-sized single-crystal domains and pure crystallographic orientations are achieved, revealing a significant enhancement (4.7 times) of carrier mobility. More importantly, the resulting film can be directly transferred onto any desired flexible substrates, and flexible transistors based on the Dif-TES-ADT thin films show a mobility as high as 16.1 cm2 V-1 s-1 , which represents the highest mobility value for the flexible transistors reported thus far. The method is general for the growth of various high-quality OSC thin films, thus opening up opportunities for high-performance organic flexible electronics.
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Affiliation(s)
- Wei Deng
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Yanling Xiao
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Bei Lu
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Liang Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Yujian Xia
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Chenhui Zhu
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Xiujuan Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Jinghua Guo
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Xiaohong Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Jiansheng Jie
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
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Qian C, Sun J, Gao Y. Transport of charge carriers and optoelectronic applications of highly ordered metal phthalocyanine heterojunction thin films. Phys Chem Chem Phys 2021; 23:9631-9642. [PMID: 33870992 DOI: 10.1039/d1cp00889g] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/10/2023]
Abstract
Organic semiconductor thin films based on polycrystalline small molecules exhibit many attractive properties that have already led to their applications in optoelectronic devices, which can be produced by less expensive and stringent processes. Conduction of electric charges typically occurs in polycrystalline organic thin films. Unavoidably, the crystalline domain size, orientation, domain boundaries and energy level of the interface affect the transport of the charge carriers in organic thin films. In this comprehensive perspective, we focus on highly ordered organic heterojunction thin films fabricated by the weak epitaxy growth method. Transport of charge carriers in these highly ordered organic heterojunction thin films was systematically studied with various characterization techniques. Recent advances are presented in high-performance optoelectronic applications based on highly ordered organic heterojunction thin films, including organic photodetectors, photovoltaic cells, photomemory devices and artificial optoelectronic synapses.
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Affiliation(s)
- Chuan Qian
- Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, Department of Physics, Hunan Normal University, Changsha, 410081, P. R. China
| | - Jia Sun
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Yongli Gao
- Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627, USA.
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Wu X, Jia R, Pan J, Zhang X, Jie J. Roles of interfaces in the ideality of organic field-effect transistors. NANOSCALE HORIZONS 2020; 5:454-472. [PMID: 32118236 DOI: 10.1039/c9nh00694j] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Organic field-effect transistors (OFETs) are fundamental building blocks for flexible and large-area electronics due to their superior solution-processability, flexibility and stretchability. OFETs with high ideality are essential to their practical applications. In reality, however, many OFETs still suffer from non-ideal behaviors, such as gate-dependent mobility, which thus hinders the extraction of their intrinsic performance. It is much desired to gain a comprehensive understanding of the origins of these non-idealities. OFETs are primarily interface-related devices, and hence their performance and ideality are highly dependent on the interface properties between each device component. This review will focus on the recent progress in investigating the non-ideal behaviors of OFETs. In particular, the roles of interfaces, including the organic semiconductor (OSC)/dielectric interface, OSC/electrode interface and OSC/atmosphere interface, in determining the ideality of OFETs are summarized. Viable approaches through interface optimization to improve the device ideality are also reviewed. Finally, an overview of the outstanding challenges as well as the future development directions for the construction of ideal OFETs is given.
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Affiliation(s)
- Xiaofeng Wu
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China.
| | - Ruofei Jia
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China.
| | - Jing Pan
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China.
| | - Xiujuan Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China.
| | - Jiansheng Jie
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China.
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Schweicher G, Garbay G, Jouclas R, Vibert F, Devaux F, Geerts YH. Molecular Semiconductors for Logic Operations: Dead-End or Bright Future? ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1905909. [PMID: 31965662 DOI: 10.1002/adma.201905909] [Citation(s) in RCA: 56] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/10/2019] [Revised: 11/18/2019] [Indexed: 05/26/2023]
Abstract
The field of organic electronics has been prolific in the last couple of years, leading to the design and synthesis of several molecular semiconductors presenting a mobility in excess of 10 cm2 V-1 s-1 . However, it is also started to recently falter, as a result of doubtful mobility extractions and reduced industrial interest. This critical review addresses the community of chemists and materials scientists to share with it a critical analysis of the best performing molecular semiconductors and of the inherent charge transport physics that takes place in them. The goal is to inspire chemists and materials scientists and to give them hope that the field of molecular semiconductors for logic operations is not engaged into a dead end. To the contrary, it offers plenty of research opportunities in materials chemistry.
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Affiliation(s)
- Guillaume Schweicher
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
- Optoelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Guillaume Garbay
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
| | - Rémy Jouclas
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
| | - François Vibert
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
| | - Félix Devaux
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
| | - Yves H Geerts
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
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Tan A, Zhang P. Tailoring the growth and electronic structures of organic molecular thin films. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:503001. [PMID: 31422957 DOI: 10.1088/1361-648x/ab3c22] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
In the rapidly developing electronics industry, it has become increasingly necessary to explore materials that are cheap, flexible and versatile which have led to significant research efforts towards organic molecular thin films. Organic molecules are unique compared to their inorganic atomic counterparts as their properties can be tuned drastically through chemical functionalization, offering versatility, though their extended shape and weak intermolecular interactions bring significant challenges to the control of both the growth and the electronic structures of molecular thin films. In this paper, we will review the self-assembly process and how to establish long-range ordered organic molecular thin films. We will also discuss how the electronic structures of thin films are impacted by the molecule's local electrostatic environment and its interaction with the substrate, within the context of controlling interfacial energy level alignment between organic semiconductors and electrodes in electronic devices.
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Affiliation(s)
- Andrew Tan
- Department of Physics and Astronomy, Michigan State University, East Lansing, MI 48824, United States of America
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Jia Z, Kim JH, Yi GR, Lee SS. Transition of Dielectrophoresis-Assembled 2D Crystals to Interlocking Structures under a Magnetic Field. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2018; 34:12412-12418. [PMID: 30247913 DOI: 10.1021/acs.langmuir.8b02706] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Aspherical cubic hematite colloids with cylindrical arms protruding from each face, referred to as "hexapods", were assembled via negative dielectrophoresis and then manipulated using an applied magnetic field. Upon application of an ac electric field, the hexapods aligned in close-packed linear chains parallel to the field direction. The chains then aggregated to the center of the device, with adjacent chains separated by distances approximately equal to twice the arm length. The resulting open packing structure exhibited cmm plane group symmetry due to the obstruction of arms, with a high density of incorporated defects. Subsequent application of a magnetic field to the dielectrophoresis (DEP)-assembled structure was found to anneal the colloidal crystal by reorienting the hexapods to align their intrinsic magnetic dipoles with the magnetic field direction. During reorganization, the colloidal packing density was found to decrease by more than 10% at both the center and edges of the crystal, accompanied by a significant loss of ordering, prior to redensification of the 2D lattice with fewer defects. Reorganization at the edge was 1.5 times faster than at the center, consistent with the need for cooperative colloidal motion to remove defects at the centers of the crystals.
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Affiliation(s)
- Zhuoqiang Jia
- Department of Chemical Engineering and Materials Science , Stevens Institute of Technology , Hoboken , New Jersey 07030 , United States
| | - Jae-Hyun Kim
- Department of Chemical Engineering , Sungkyunkwan University , Suwon 16419 , Korea
| | - Gi-Ra Yi
- Department of Chemical Engineering , Sungkyunkwan University , Suwon 16419 , Korea
| | - Stephanie S Lee
- Department of Chemical Engineering and Materials Science , Stevens Institute of Technology , Hoboken , New Jersey 07030 , United States
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Park JW, Lee KI, Choi YS, Kim JH, Jeong D, Kwon YN, Park JB, Ahn HY, Park JI, Lee HS, Shin J. The prediction of hole mobility in organic semiconductors and its calibration based on the grain-boundary effect. Phys Chem Chem Phys 2018; 18:21371-80. [PMID: 27425259 DOI: 10.1039/c6cp02993k] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/04/2023]
Abstract
A new reliable computational model to predict the hole mobility of poly-crystalline organic semiconductors in thin films was developed. Site energy differences and transfer integrals in crystalline morphologies of organic molecules were obtained from quantum chemical calculations, in which periodic boundary conditions were efficiently applied to capture the interactions with the surrounding molecules in the crystalline organic layer. Then the parameters were employed in kinetic Monte Carlo (kMC) simulations to estimate the carrier mobility. Carrier transport in multiple directions has been considered in the kMC simulation to mimic poly-crystalline characteristics under thin-film conditions. Furthermore, the calculated mobility was corrected using a calibration equation based on microscopy images of the thin films to take the effect of grain boundaries into account. As a result, good agreement was observed between the predicted and measured hole mobility values for 21 molecular species: the coefficient of determination (R(2)) was estimated to be 0.83 and the mean absolute error was 1.32 cm(2) V(-1) s(-1). This numerical approach can be applied to any molecules for which crystal structures are available and will provide a rapid and precise way of predicting device performance.
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Affiliation(s)
- Jin Woo Park
- Samsung Advanced Institute of Technology, Samsung Electronics Co. Ltd., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, Republic of Korea.
| | - Kyu Il Lee
- Samsung Advanced Institute of Technology, Samsung Electronics Co. Ltd., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, Republic of Korea.
| | - Youn-Suk Choi
- Samsung Advanced Institute of Technology, Samsung Electronics Co. Ltd., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, Republic of Korea.
| | - Jung-Hwa Kim
- Samsung Advanced Institute of Technology, Samsung Electronics Co. Ltd., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, Republic of Korea.
| | - Daun Jeong
- Samsung Advanced Institute of Technology, Samsung Electronics Co. Ltd., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, Republic of Korea.
| | - Young-Nam Kwon
- Samsung Advanced Institute of Technology, Samsung Electronics Co. Ltd., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, Republic of Korea.
| | - Jong-Bong Park
- Samsung Advanced Institute of Technology, Samsung Electronics Co. Ltd., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, Republic of Korea.
| | - Ho Young Ahn
- Samsung Advanced Institute of Technology, Samsung Electronics Co. Ltd., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, Republic of Korea.
| | - Jeong-Il Park
- Samsung Advanced Institute of Technology, Samsung Electronics Co. Ltd., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, Republic of Korea.
| | - Hyo Sug Lee
- Samsung Advanced Institute of Technology, Samsung Electronics Co. Ltd., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, Republic of Korea.
| | - Jaikwang Shin
- Samsung Advanced Institute of Technology, Samsung Electronics Co. Ltd., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, Republic of Korea.
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Michaelides SA, Michailidis AR, Bablekos GD, Analitis A, Michalatou M, Koulouris N. Does size matter concerning impact of position on oxygenation status in spontaneously breathing patients with unilateral effusion? Postgrad Med J 2017; 94:81-86. [PMID: 28972098 DOI: 10.1136/postgradmedj-2017-135164] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/29/2017] [Revised: 08/31/2017] [Accepted: 09/09/2017] [Indexed: 11/03/2022]
Abstract
BACKGROUND Inconsistent and contradictory findings have appeared in the literature concerning the impact of body position on oxygenation in pleural effusion. METHODS We attempted to elucidate whether the size of the pleural effusion in patients with no parenchymal disease is the main determinant of posture-induced alterations in oxygenation parameters. We studied 62 spontaneously breathing patients aged 65.3±7.8 years (mean±SD), of whom 36 had large and massive-sized effusions (Group A) and 26 had small and moderate-sized effusions (Group B). Arterial blood gases were determined in four different body positions: sitting (SIT), supine (SUP), ipsilateral (IPS) and contralateral (CON) to the effusion side, after remaining relaxed for at least 20 min in each position. Separation into groups A and B was deliberately set from the position of the fluid meniscus line on a posteroanterior chest film just above the upper costal margin of the sixth anterior rib. A two-way ANOVA model with outcome variables PaO2, PaCO2 and [A-a] DO2 was used. RESULTS In both groups the best oxygenation was found in SIT. The worst oxygenation (highest [A-a] DO2 value) occurred in group A in CON compared with IPS (59.4±7.6 vs 49.0±7.5 mm Hg, p<0.001) and in group B in IPS compared with CON (51.0±8.7 vs 39.5±9.2 mm Hg, p<0.001). Also, PaCO2 showed significant differences in both groups in IPS compared with CON (p=0.002). CONCLUSIONS Patients with large-sized effusions exhibit the worst oxygenation when lying on the side contralateral to the effusion, while those with small-sized effusions exhibit the worst oxygenation when lying on the side ipsilateral to the effusion.
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Affiliation(s)
- Stylianos A Michaelides
- Department of Occupational Lung Diseases and Tuberculosis, Sismanogleio-Amalia Fleming General Hospital, Athens, Greece
| | - Avgerinos-Romanos Michailidis
- Department of Occupational Lung Diseases and Tuberculosis, Sismanogleio-Amalia Fleming General Hospital, Athens, Greece.,Department of Medical Laboratories, Faculty of Health and Caring Professions, University of Applied Sciences / Technological Educational Institute (TEI) of Athens, Athens, Greece
| | - George D Bablekos
- Department of Medical Laboratories, Faculty of Health and Caring Professions, University of Applied Sciences / Technological Educational Institute (TEI) of Athens, Athens, Greece
| | - Antonis Analitis
- Department of Hygiene, Epidemiology and Medical Statistics, Medical School National and Kapodistrian University of Athens, Athens, Greece
| | - Maria Michalatou
- Department of Physiotherapy, Sismanogleio-Amalia Fleming General Hospital, Athens, Greece
| | - Nikolaos Koulouris
- First Department of Thoracic Medicine, Medical School, National and Kapodistrian University of Athens, Hospital for Diseases of the Chest (Sotiria), Athens, Greece
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Park JH, Vishwanath S, Wolf S, Zhang K, Kwak I, Edmonds M, Breeden M, Liu X, Dobrowolska M, Furdyna J, Robinson JA, Xing HG, Kummel AC. Selective Chemical Response of Transition Metal Dichalcogenides and Metal Dichalcogenides in Ambient Conditions. ACS APPLIED MATERIALS & INTERFACES 2017; 9:29255-29264. [PMID: 28805363 DOI: 10.1021/acsami.7b08244] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
To fabricate practical devices based on semiconducting two-dimensional (2D) materials, the source, channel, and drain materials are exposed to ambient air. However, the response of layered 2D materials to air has not been fully elucidated at the molecular level. In the present report, the effects of air exposure on transition metal dichalcogenides (TMD) and metal dichalcogenides (MD) are studied using ultrahigh-vacuum scanning tunneling microscopy (STM). The effects of a 1-day ambient air exposure on MBE-grown WSe2, chemical vapor deposition (CVD)-grown MoS2, and MBE SnSe2 are compared. Both MBE-grown WSe2 and CVD-grown MoS2 display a selective air exposure response at the step edges, consistent with oxidation on WSe2 and adsorption of hydrocarbon on MoS2, while the terraces and domain/grain boundaries of both TMDs are nearly inert to ambient air. Conversely, MBE-grown SnSe2, an MD, is not stable in ambient air. After exposure in ambient air for 1 day, the entire surface of SnSe2 is decomposed to SnOx and SeOx, as seen with X-ray photoelectron spectroscopy. Since the oxidation enthalpy of all three materials is similar, the data is consistent with greater oxidation of SnSe2 being driven by the weak bonding of SnSe2.
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Affiliation(s)
- Jun Hong Park
- Center for Quantum Nanoscience, Institute for Basic Science (IBS) , Seoul 03760, Republic of Korea
- Department of Physics, Ewha Womans University , Seoul 03760, Republic of Korea
| | | | | | - Kehao Zhang
- Department of Materials Science and Engineering, Pennsylvania State University , University Park, Pennsylvania 16802, United States
| | | | | | | | - Xinyu Liu
- Physics Department, University of Notre Dame , Notre Dame, Indiana 46556, United States
| | - Margaret Dobrowolska
- Physics Department, University of Notre Dame , Notre Dame, Indiana 46556, United States
| | - Jacek Furdyna
- Physics Department, University of Notre Dame , Notre Dame, Indiana 46556, United States
| | - Joshua A Robinson
- Department of Materials Science and Engineering, Pennsylvania State University , University Park, Pennsylvania 16802, United States
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12
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Xu X, Yao Y, Shan B, Gu X, Liu D, Liu J, Xu J, Zhao N, Hu W, Miao Q. Electron Mobility Exceeding 10 cm(2) V(-1) s(-1) and Band-Like Charge Transport in Solution-Processed n-Channel Organic Thin-Film Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2016; 28:5276-83. [PMID: 27151777 DOI: 10.1002/adma.201601171] [Citation(s) in RCA: 99] [Impact Index Per Article: 12.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/29/2016] [Revised: 03/27/2016] [Indexed: 05/22/2023]
Abstract
Solution-processed n-channel organic thin-film transistors (OTFTs) that exhibit a field-effect mobility as high as 11 cm(2) V(-1) s(-1) at room temperature and a band-like temperature dependence of electron mobility are reported. By comparison of solution-processed OTFTs with vacuum-deposited OTFTs of the same organic semiconductor, it is found that grain boundaries are a key factor inhibiting band-like charge transport.
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Affiliation(s)
- Xiaomin Xu
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China
| | - Yifan Yao
- Institute of Chemistry, Chinese Academy of Sciences, Zhongguancun North First Street 2, 100190, Beijing, China
| | - Bowen Shan
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China
| | - Xiao Gu
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China
| | - Danqing Liu
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China
| | - Jinyu Liu
- Institute of Chemistry, Chinese Academy of Sciences, Zhongguancun North First Street 2, 100190, Beijing, China
| | - Jianbin Xu
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China
- Institute of Molecular Functional Materials, Area of Excellence Scheme, University Grants Committee, Hong Kong, China
| | - Ni Zhao
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China
| | - Wenping Hu
- Institute of Chemistry, Chinese Academy of Sciences, Zhongguancun North First Street 2, 100190, Beijing, China
- Department of Chemistry, School of Science, Tianjin University, Tianjin, 300072, China
| | - Qian Miao
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China
- Institute of Molecular Functional Materials, Area of Excellence Scheme, University Grants Committee, Hong Kong, China
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13
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Lücke A, Ortmann F, Panhans M, Sanna S, Rauls E, Gerstmann U, Schmidt WG. Temperature-Dependent Hole Mobility and Its Limit in Crystal-Phase P3HT Calculated from First Principles. J Phys Chem B 2016; 120:5572-80. [DOI: 10.1021/acs.jpcb.6b03598] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Andreas Lücke
- Lehrstuhl
für Theoretische Materialphysik, Universität Paderborn, 33095 Paderborn, Germany
| | - Frank Ortmann
- Institute
for Materials Science and Dresden Center for Computational Materials
Science, Technische Universität Dresden, 01069 Dresden, Germany
| | - Michel Panhans
- Institute
for Materials Science and Dresden Center for Computational Materials
Science, Technische Universität Dresden, 01069 Dresden, Germany
| | - Simone Sanna
- Lehrstuhl
für Theoretische Materialphysik, Universität Paderborn, 33095 Paderborn, Germany
| | - Eva Rauls
- Lehrstuhl
für Theoretische Materialphysik, Universität Paderborn, 33095 Paderborn, Germany
| | - Uwe Gerstmann
- Lehrstuhl
für Theoretische Materialphysik, Universität Paderborn, 33095 Paderborn, Germany
| | - Wolf Gero Schmidt
- Lehrstuhl
für Theoretische Materialphysik, Universität Paderborn, 33095 Paderborn, Germany
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14
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Bein T, Bischoff M, Brückner U, Gebhardt K, Henzler D, Hermes C, Lewandowski K, Max M, Nothacker M, Staudinger T, Tryba M, Weber-Carstens S, Wrigge H. S2e guideline: positioning and early mobilisation in prophylaxis or therapy of pulmonary disorders : Revision 2015: S2e guideline of the German Society of Anaesthesiology and Intensive Care Medicine (DGAI). Anaesthesist 2015; 64 Suppl 1:1-26. [PMID: 26335630 PMCID: PMC4712230 DOI: 10.1007/s00101-015-0071-1] [Citation(s) in RCA: 74] [Impact Index Per Article: 8.2] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Abstract
The German Society of Anesthesiology and Intensive Care Medicine (DGAI) commissioneda revision of the S2 guidelines on "positioning therapy for prophylaxis or therapy of pulmonary function disorders" from 2008. Because of the increasing clinical and scientificrelevance the guidelines were extended to include the issue of "early mobilization"and the following main topics are therefore included: use of positioning therapy and earlymobilization for prophylaxis and therapy of pulmonary function disorders, undesired effects and complications of positioning therapy and early mobilization as well as practical aspects of the use of positioning therapy and early mobilization. These guidelines are the result of a systematic literature search and the subsequent critical evaluation of the evidence with scientific methods. The methodological approach for the process of development of the guidelines followed the requirements of evidence-based medicine, as defined as the standard by the Association of the Scientific Medical Societies in Germany. Recently published articles after 2005 were examined with respect to positioning therapy and the recently accepted aspect of early mobilization incorporates all literature published up to June 2014.
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Affiliation(s)
- Th Bein
- Clinic for Anaesthesiology, University Hospital Regensburg, 93042, Regensburg, Germany.
| | - M Bischoff
- Clinic for Anaesthesiology, University Hospital Regensburg, 93042, Regensburg, Germany
| | - U Brückner
- Physiotherapy Department, Clinic Donaustauf, Centre for Pneumology, 93093, Donaustauf, Germany
| | - K Gebhardt
- Clinic for Anaesthesiology, University Hospital Regensburg, 93042, Regensburg, Germany
| | - D Henzler
- Clinic for Anaesthesiology, Surgical Intensive Care Medicine, Emergency Care Medicine, Pain Management, Klinikum Herford, 32049, Herford, Germany
| | - C Hermes
- HELIOS Clinic Siegburg, 53721, Siegburg, Germany
| | - K Lewandowski
- Clinic for Anaesthesiology, Intensive Care Medicine and Pain Management, Elisabeth Hospital Essen, 45138, Essen, Germany
| | - M Max
- Centre Hospitalier, Soins Intensifs Polyvalents, 1210, Luxembourg, Luxemburg
| | - M Nothacker
- Association of Scientific Medical Societies (AWMF), 35043, Marburg, Germany
| | - Th Staudinger
- University Hospital for Internal Medicine I, Medical University of Wien, General Hospital of Vienna, 1090, Vienna, Austria
| | - M Tryba
- Clinic for Anaesthesiology, Intensive Care Medicine and Pain Management, Klinikum Kassel, 34125, Kassel, Germany
| | - S Weber-Carstens
- Clinic for Anaesthesiology and Surgical Intensive Care Medicine, Charité Universitätsmedizin Berlin, Campus Virchow Klinikum, 13353, Berlin, Germany
| | - H Wrigge
- Clinic and Policlinic for Anaesthesiology and Intensive Care Medicine, University Hospital Leipzig, 04103, Leipzig, Germany
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15
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Wagner SR, Huang B, Park C, Feng J, Yoon M, Zhang P. Growth of Metal Phthalocyanine on Deactivated Semiconducting Surfaces Steered by Selective Orbital Coupling. PHYSICAL REVIEW LETTERS 2015; 115:096101. [PMID: 26371664 DOI: 10.1103/physrevlett.115.096101] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2015] [Indexed: 05/20/2023]
Abstract
Using scanning tunneling microscopy and density functional theory, we show that the molecular ordering and orientation of metal phthalocyanine molecules on the deactivated Si surface display a strong dependency on the central transition-metal ion, driven by the degree of orbital hybridization at the heterointerface via selective p-d orbital coupling. This Letter identifies a selective mechanism for modifying the molecule-substrate interaction which impacts the growth behavior of transition-metal-incorporated organic molecules on a technologically relevant substrate for silicon-based devices.
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Affiliation(s)
- Sean R Wagner
- Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824-2320, USA
| | - Bing Huang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - Changwon Park
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - Jiagui Feng
- Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824-2320, USA
| | - Mina Yoon
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - Pengpeng Zhang
- Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824-2320, USA
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16
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Exciton dynamics reveal aggregates with intermolecular order at hidden interfaces in solution-cast organic semiconducting films. Nat Commun 2015; 6:5946. [DOI: 10.1038/ncomms6946] [Citation(s) in RCA: 45] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/13/2014] [Accepted: 11/24/2014] [Indexed: 11/08/2022] Open
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17
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Hu Y, Berdunov N, Di CA, Nandhakumar I, Zhang F, Gao X, Zhu D, Sirringhaus H. Effect of molecular asymmetry on the charge transport physics of high mobility n-type molecular semiconductors investigated by scanning Kelvin probe microscopy. ACS NANO 2014; 8:6778-6787. [PMID: 24941156 DOI: 10.1021/nn500944f] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
We have investigated the influence of the symmetry of the side chain substituents in high-mobility, solution processable n-type molecular semiconductors on the performance of organic field-effect transistors (OFETs). We compare two molecules with the same conjugated core, but either symmetric or asymmetric side chain substituents, and investigate the transport properties and thin film growth mode using scanning Kelvin probe microscopy (SKPM) and atomic force microscopy (AFM). We find that asymmetric side chains can induce a favorable two-dimensional growth mode with a bilayer structure, which enables ultrathin films with a single bilayer to exhibit excellent transport properties, while the symmetric molecules adopt an unfavorable three-dimensional growth mode in which transport in the first monolayer at the interface is severely hindered by high-resistance grain boundaries.
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Affiliation(s)
- Yuanyuan Hu
- Cavendish Laboratory, University of Cambridge , Cambridge CB3 0HE, United Kingdom
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18
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Park JH, Royer JE, Chagarov E, Kaufman-Osborn T, Edmonds M, Kent T, Lee S, Trogler WC, Kummel AC. Atomic Imaging of the Irreversible Sensing Mechanism of NO2 Adsorption on Copper Phthalocyanine. J Am Chem Soc 2013; 135:14600-9. [DOI: 10.1021/ja403752r] [Citation(s) in RCA: 49] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Jun Hong Park
- Materials Science and Engineering Program and ‡Departments of Chemistry and Biochemistry, University of California, San Diego, 9500 Gilman Drive,, La Jolla 92093, California, United States
| | - James E. Royer
- Materials Science and Engineering Program and ‡Departments of Chemistry and Biochemistry, University of California, San Diego, 9500 Gilman Drive,, La Jolla 92093, California, United States
| | - Evgeniy Chagarov
- Materials Science and Engineering Program and ‡Departments of Chemistry and Biochemistry, University of California, San Diego, 9500 Gilman Drive,, La Jolla 92093, California, United States
| | - Tobin Kaufman-Osborn
- Materials Science and Engineering Program and ‡Departments of Chemistry and Biochemistry, University of California, San Diego, 9500 Gilman Drive,, La Jolla 92093, California, United States
| | - Mary Edmonds
- Materials Science and Engineering Program and ‡Departments of Chemistry and Biochemistry, University of California, San Diego, 9500 Gilman Drive,, La Jolla 92093, California, United States
| | - Tyler Kent
- Materials Science and Engineering Program and ‡Departments of Chemistry and Biochemistry, University of California, San Diego, 9500 Gilman Drive,, La Jolla 92093, California, United States
| | - Sangyeob Lee
- Materials Science and Engineering Program and ‡Departments of Chemistry and Biochemistry, University of California, San Diego, 9500 Gilman Drive,, La Jolla 92093, California, United States
| | - William C. Trogler
- Materials Science and Engineering Program and ‡Departments of Chemistry and Biochemistry, University of California, San Diego, 9500 Gilman Drive,, La Jolla 92093, California, United States
| | - Andrew C. Kummel
- Materials Science and Engineering Program and ‡Departments of Chemistry and Biochemistry, University of California, San Diego, 9500 Gilman Drive,, La Jolla 92093, California, United States
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19
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Pouzot C, Richard JC, Gros A, Costes N, Lavenne F, Le Bars D, Guerin C. Noninvasive quantitative assessment of pulmonary blood flow with 18F-FDG PET. J Nucl Med 2013; 54:1653-60. [PMID: 23907755 DOI: 10.2967/jnumed.112.116699] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022] Open
Abstract
UNLABELLED Pulmonary blood flow (PBF) is a critical determinant of oxygenation during acute lung injury (ALI). PET/CT with (18)F-FDG allows the assessment of both lung aeration and neutrophil inflammation as well as an estimation of the regional fraction of blood (FB) if compartmental modeling is used to quantify (18)F-FDG pulmonary uptake. The aim of this study was to validate the use of FB to assess PBF, with PET and compartmental modeling of (15)O-H2O kinetics as a reference method, in both control animals and animals with ALI. For the purpose of studying a wide range of PBF values, supine and prone positions and various positive end-expiratory pressures (PEEPs) and tidal volumes (V(T)s) were selected. METHODS Pigs were randomized into 3 groups in which ALI was induced by HCl inhalation: pigs studied in the supine position with a low PEEP (5 ± 3 [mean ± SD] cm of H2O; n = 9) or a high PEEP (12 ± 1 cm of H2O; n = 8) and pigs studied in the prone position with a low PEEP (6 ± 3 cm of H2O; n = 9). Also included were a control group that did not have ALI (n = 6) and 2 additional groups (n = 6 each) that had a high V(T) to maintain a transpulmonary pressure of greater than or equal to 35 cm of H2O and that either received HCl inhalation or did not receive HCl inhalation. PBF and FB were measured with PET and compartmental modeling of (15)O-H2O and (18)F-FDG kinetics in 10 lung regions along the anterior-to-posterior lung dimension, and both were expressed in each region as a fraction of their values in the whole lung. RESULTS PBF and FB were strongly correlated (R(2) = 0.9), with a slope of the regression line close to unity and a negligible intercept. The mean difference between PBF and FB was 0, and the 95% limits of agreement were -0.035 to 0.035. This good agreement between methods was obtained in both normal and injured lungs and under a wide range of V(T), PEEP, and regional PBF values (7-71 mL/kg, 0-15 cm of H2O, and 24-603 mL·min(-1)·100 mL of lung(-1), respectively). CONCLUSION FB assessed with (18)F-FDG is a good surrogate for PBF in both normal animals and animals with ALI. PET/CT has the potential to be used to study ventilation, perfusion, and lung inflammation with a single tracer.
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Affiliation(s)
- Céline Pouzot
- Service Siamu, VetAgro Sup, Campus Vétérinaire de Lyon, Marcy l'Etoile, France
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20
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Abstract
AbstractSurfaces and interfaces play a critical role in determining properties and functions of nanomaterials, in many cases dominating bulk properties, owing to the large surface- and interface-area-to-volume ratio. Using Si nanomembranes, a well-controlled two-dimensional single-crystalline semiconductor, as a prototype system, we discuss how surfaces and interfaces influence electrical transport properties at the nanoscale. We show that electronic conduction in Si nanomembranes is not determined by bulk dopants but by the interplay of surface and interface electronic structures with the “bulk” band structure of the thin Si membrane. Additionally, we describe our recent experimental results on the control of highly ordered molecular structures on Si surfaces, which is of intense interest for the integration of ordered organic thin films in silicon-based electronics. This could also potentially lead to the rational design of Si nanostructures with controlled properties through regulation of the surface chemistry.
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21
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Wagner SR, Lunt RR, Zhang P. Anisotropic crystalline organic step-flow growth on deactivated Si surfaces. PHYSICAL REVIEW LETTERS 2013; 110:086107. [PMID: 23473173 DOI: 10.1103/physrevlett.110.086107] [Citation(s) in RCA: 18] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/17/2012] [Indexed: 06/01/2023]
Abstract
We report the first demonstration of anisotropic step-flow growth of organic molecules on a semiconducting substrate using metal phthalocyanine thermally deposited on the deactivated Si(111)-B sqrt[3]×sqrt[3] R30° surface. With scanning probe microscopy and geometric modeling, we prove the quasiepitaxial nature of this step-flow growth that exhibits no true commensurism, despite a single dominant long-range ordered relationship between the organic crystalline film and the substrate, uniquely distinct from inorganic epitaxial growth. This growth mode can likely be generalized for a range of organic molecules on deactivated Si surfaces and access to it offers new potential for the integration of ordered organic thin films in silicon-based electronics.
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Affiliation(s)
- Sean R Wagner
- Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824-2320, USA
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22
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Chen Y, Lee B, Yi HT, Lee SS, Payne MM, Pola S, Kuo CH, Loo YL, Anthony JE, Tao YT, Podzorov V. Dynamic character of charge transport parameters in disordered organic semiconductor field-effect transistors. Phys Chem Chem Phys 2013; 14:14142-51. [PMID: 22868385 DOI: 10.1039/c2cp41823a] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
In this perspective article, we discuss the dynamic instability of charge carrier transport in a range of popular organic semiconductors. We observe that in many cases field-effect mobility, an important parameter used to characterize the performance of organic field-effect transistors (OFETs), strongly depends on the rate of the gate voltage sweep during the measurement. Some molecular systems are so dynamic that their nominal mobility can vary by more than one order of magnitude, depending on how fast the measurements are performed, making an assignment of a single mobility value to devices meaningless. It appears that dispersive transport in OFETs based on disordered semiconductors, those with a high density of localized trap states distributed over a wide energy range, is responsible for the gate voltage sweep rate dependence of nominal mobility. We compare such rate dependence in different materials and across different device architectures, including pristine and trap-dominated single-crystal OFETs, as well as solution-processed polycrystalline thin-film OFETs. The paramount significance given to a single mobility value in the organic electronics community and the practical importance of OFETs for applications thus suggest that such an issue, previously either overlooked or ignored, is in fact a very important point to consider when engaging in fundamental studies of charge carrier mobility in organic semiconductors or designing applied circuits with organic semiconductors.
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Affiliation(s)
- Y Chen
- Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA
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23
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Yogev S, Matsubara R, Nakamura M, Zschieschang U, Klauk H, Rosenwaks Y. Fermi level pinning by gap states in organic semiconductors. PHYSICAL REVIEW LETTERS 2013; 110:036803. [PMID: 23373942 DOI: 10.1103/physrevlett.110.036803] [Citation(s) in RCA: 24] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/29/2012] [Indexed: 06/01/2023]
Abstract
We measure the gap density of states and the Fermi level position in thin-film transistors based on pentacene and dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) films grown on various surfaces using Kelvin probe force microscopy. It is found that the density of states in the gap of pentacene is extremely sensitive to the underlying interface and governs the Fermi level energy in the gap. The density of gap states in pentacene films grown on bare silicon dioxide (SiO(2)) was found to be larger by 1 order of magnitude compared to that in pentacene grown on SiO(2) treated with hexamethyldisilazane and larger by 2 orders of magnitude compared to that of pentacene grown on aluminum oxide (AlO(x)) treated with a self-assembled monolayer (SAM) of n-tetradecylphosphonic acid (HC(14)-PA). When DNTT was grown on HC(14)-PA-SAM-treated AlO(x), the gap density of states was even smaller, so that the Fermi level pinning was significantly reduced. The correlation between the measured gap density of states and the transistor performance is demonstrated and discussed.
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Affiliation(s)
- S Yogev
- School of Electrical Engineering, Tel-Aviv University, Tel-Aviv 69978, Israel
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24
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Bodenstein M, Bierschock S, Boehme S, Wang H, Vogt A, Kwiecien R, David M, Markstaller K. Influence of fluid and volume state on PaO2oscillations in mechanically ventilated pigs. Exp Lung Res 2013; 39:80-90. [DOI: 10.3109/01902148.2012.758192] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
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25
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Lee SS, Mativetsky JM, Loth MA, Anthony JE, Loo YL. Quantifying resistances across nanoscale low- and high-angle interspherulite boundaries in solution-processed organic semiconductor thin films. ACS NANO 2012; 6:9879-9886. [PMID: 23020587 DOI: 10.1021/nn303446h] [Citation(s) in RCA: 20] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
The nanoscale boundaries formed when neighboring spherulites impinge in polycrystalline, solution-processed organic semiconductor thin films act as bottlenecks to charge transport, significantly reducing organic thin-film transistor mobility in devices comprising spherulitic thin films as the active layers. These interspherulite boundaries (ISBs) are structurally complex, with varying angles of molecular orientation mismatch along their lengths. We have successfully engineered exclusively low- and exclusively high-angle ISBs to elucidate how the angle of molecular orientation mismatch at ISBs affects their resistivities in triethylsilylethynyl anthradithiophene thin films. Conductive AFM and four-probe measurements reveal that current flow is unaffected by the presence of low-angle ISBs, whereas current flow is significantly disrupted across high-angle ISBs. In the latter case, we estimate the resistivity to be 22 MΩμm(2)/width of the ISB, only less than a quarter of the resistivity measured across low-angle grain boundaries in thermally evaporated sexithiophene thin films. This discrepancy in resistivities across ISBs in solution-processed organic semiconductor thin films and grain boundaries in thermally evaporated organic semiconductor thin films likely arises from inherent differences in the nature of film formation in the respective systems.
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Affiliation(s)
- Stephanie S Lee
- Department of Chemical and Biological Engineering, Princeton University, Princeton, New Jersey 08544, United States
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26
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Robak O, Schellongowski P, Bojic A, Laczika K, Locker GJ, Staudinger T. Short-term effects of combining upright and prone positions in patients with ARDS: a prospective randomized study. Crit Care 2011; 15:R230. [PMID: 21955757 PMCID: PMC3334777 DOI: 10.1186/cc10471] [Citation(s) in RCA: 22] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/24/2011] [Revised: 08/17/2011] [Accepted: 09/29/2011] [Indexed: 11/24/2022] Open
Abstract
Introduction Prone position is known to improve oxygenation in patients with acute lung injury (ALI) and the acute respiratory distress syndrome (ARDS). Supine upright (semirecumbent) position also exerts beneficial effects on gas exchange in this group of patients. We evaluated the effect of combining upright and prone position on oxygenation and respiratory mechanics in patients with ALI or ARDS in a prospective randomized cross-over study. Methods After turning them prone from a supine position, we randomized the patients to a prone position or combined prone and upright position. After 2 hours, the position was changed to the other one for another 6 hours. The gas exchange and static compliance of the respiratory system, lungs, and chest wall were assessed in the supine position as well as every hour in the prone position. Results Twenty patients were enrolled in the study. The PaO2/FiO2 ratio improved significantly from the supine to the prone position and further significantly increased with additional upright position. Fourteen (70%) patients were classified as responders to the prone position, whereas 17 (85%) patients responded to the prone plus upright position compared with the supine position (P = n.s.). No statistically significant changes were found with respect to compliance. Conclusions Combining the prone position with the upright position in patients with ALI or ARDS leads to further improvement of oxygenation. Trial registration Clinical Trials No. NCT00753129
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Affiliation(s)
- Oliver Robak
- Department of Internal Medicine I, Intensive Care Unit, Medical University of Vienna, Waehringer Guertel 18-20, A-1090 Vienna, Austria
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27
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Wen Y, Liu Y, Guo Y, Yu G, Hu W. Experimental Techniques for the Fabrication and Characterization of Organic Thin Films for Field-Effect Transistors. Chem Rev 2011; 111:3358-406. [DOI: 10.1021/cr1001904] [Citation(s) in RCA: 214] [Impact Index Per Article: 16.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Yugeng Wen
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Yunlong Guo
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Gui Yu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Wenping Hu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
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28
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Guo J, Ohkita H, Yokoya S, Benten H, Ito S. Bimodal Polarons and Hole Transport in Poly(3-hexylthiophene):Fullerene Blend Films. J Am Chem Soc 2010; 132:9631-7. [DOI: 10.1021/ja9108787] [Citation(s) in RCA: 114] [Impact Index Per Article: 8.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Jiamo Guo
- Department of Polymer Chemistry, Graduate School of Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan and PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan
| | - Hideo Ohkita
- Department of Polymer Chemistry, Graduate School of Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan and PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan
| | - Seiichirou Yokoya
- Department of Polymer Chemistry, Graduate School of Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan and PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan
| | - Hiroaki Benten
- Department of Polymer Chemistry, Graduate School of Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan and PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan
| | - Shinzaburo Ito
- Department of Polymer Chemistry, Graduate School of Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan and PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan
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Kim SH, Jang M, Yang H, Park CE. Effect of pentacene–dielectric affinity on pentacene thin film growth morphology in organic field-effect transistors. ACTA ACUST UNITED AC 2010. [DOI: 10.1039/b921371f] [Citation(s) in RCA: 54] [Impact Index Per Article: 3.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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Rivnay J, Jimison LH, Northrup JE, Toney MF, Noriega R, Lu S, Marks TJ, Facchetti A, Salleo A. Large modulation of carrier transport by grain-boundary molecular packing and microstructure in organic thin films. NATURE MATERIALS 2009; 8:952-8. [PMID: 19898460 DOI: 10.1038/nmat2570] [Citation(s) in RCA: 210] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/09/2009] [Accepted: 10/02/2009] [Indexed: 05/03/2023]
Abstract
Solution-processable organic semiconductors are central to developing viable printed electronics, and performance comparable to that of amorphous silicon has been reported for films grown from soluble semiconductors. However, the seemingly desirable formation of large crystalline domains introduces grain boundaries, resulting in substantial device-to-device performance variations. Indeed, for films where the grain-boundary structure is random, a few unfavourable grain boundaries may dominate device performance. Here we isolate the effects of molecular-level structure at grain boundaries by engineering the microstructure of the high-performance n-type perylenediimide semiconductor PDI8-CN2 and analyse their consequences for charge transport. A combination of advanced X-ray scattering, first-principles computation and transistor characterization applied to PDI8-CN2 films reveals that grain-boundary orientation modulates carrier mobility by approximately two orders of magnitude. For PDI8-CN2 we show that the molecular packing motif (that is, herringbone versus slip-stacked) plays a decisive part in grain-boundary-induced transport anisotropy. The results of this study provide important guidelines for designing device-optimized molecular semiconductors.
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Affiliation(s)
- Jonathan Rivnay
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA
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Regional aeration and perfusion distribution in a sheep model of endotoxemic acute lung injury characterized by functional computed tomography imaging. Crit Care Med 2009; 37:2402-11. [PMID: 19531954 DOI: 10.1097/ccm.0b013e3181a02354] [Citation(s) in RCA: 20] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
Abstract
OBJECTIVES Sepsis-related lung injury is the most common and morbid form of acute lung injury. The objective of this study was to develop an ovine model of septic acute lung injury and characterize its pathophysiology regarding its recruitability and changes in regional aeration and perfusion distributions at injury and during injury evolution. DESIGN Experimental animal study. SETTING University hospital research laboratory. SUBJECTS Adult sheep. INTERVENTIONS Twenty-one anesthetized and mechanically ventilated sheep received intravenous Escherichia coli endotoxin infusion until severe hypoxemia was obtained. Inspiratory- and expiratory-gated computed tomography images of the entire lung were acquired in six subjects at baseline, during endotoxin infusion, and at injury. Perfusion images were obtained at apex and base locations at baseline and injury. Computed tomography images were analyzed for total, air, and tissue lung volumes and axial and vertical aeration and perfusion gradients. Lung recruitability was studied in a subgroup of subjects after injury. MEASUREMENTS AND MAIN RESULTS Computed tomography imaging showed a patchy, progressive decrease in air volume as injury evolved, partially replaced by an increase in tissue volume. Perfusion showed a nondependent-to-dependent gradient at baseline that remained relatively unchanged with injury. Perfusion to poorly aerated lung regions was unchanged or increased after injury. Aeration and perfusion distributions at baseline were primarily dorsal or dependent. After injury, the heterogeneity of perfusion and aeration increased and the effect of gravity decreased. Recruitment maneuvers and changes in positive end-expiratory pressure resulted in no improvement in aeration or oxygenation. CONCLUSIONS The severe hypoxemia, moderate volume loss, and perfusion patterns are consistent with an injury model in which hypoxemia is exacerbated by endotoxin-mediated failure of hypoxic pulmonary vasoconstriction.
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Burrowes KS, Swan AJ, Warren NJ, Tawhai MH. Towards a virtual lung: multi-scale, multi-physics modelling of the pulmonary system. PHILOSOPHICAL TRANSACTIONS. SERIES A, MATHEMATICAL, PHYSICAL, AND ENGINEERING SCIENCES 2008; 366:3247-63. [PMID: 18593661 PMCID: PMC3268218 DOI: 10.1098/rsta.2008.0073] [Citation(s) in RCA: 25] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
The essential function of the lung, gas exchange, is dependent on adequate matching of ventilation and perfusion, where air and blood are delivered through complex branching systems exposed to regionally varying transpulmonary and transmural pressures. Structure and function in the lung are intimately related, yet computational models in pulmonary physiology usually simplify or neglect structure. The geometries of the airway and vascular systems and their interaction with parenchymal tissue have an important bearing on regional distributions of air and blood, and therefore on whole lung gas exchange, but this has not yet been addressed by modelling studies. Models for gas exchange have typically incorporated considerable detail at the level of chemical reactions, with little thought for the influence of structure. To date, relatively little attention has been paid to modelling at the cellular or subcellular level in the lung, or to linking information from the protein structure/interaction and cellular levels to the operation of the whole lung. We review previous work in developing anatomically based models of the lung, airways, parenchyma and pulmonary vasculature, and some functional studies in which these models have been used. Models for gas exchange at several spatial scales are briefly reviewed, and the challenges and benefits from modelling cellular function in the lung are discussed.
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Affiliation(s)
- K S Burrowes
- Oxford University Computing Laboratory, Parks Road, Oxford OX1 3QD, UK.
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Effects of prone position and positive end-expiratory pressure on lung perfusion and ventilation. Crit Care Med 2008; 36:2373-80. [PMID: 18596639 DOI: 10.1097/ccm.0b013e31818094a9] [Citation(s) in RCA: 34] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
Abstract
OBJECTIVES Prone positioning is frequently used during acute respiratory distress syndrome. However, mechanisms by which it improves oxygenation are poorly understood, as well as its interaction with positive end-expiratory pressure. This study was conducted to decipher the respective effects of positive end-expiratory pressure and posture during lung injury on regional lung ventilation, perfusion and recruitment assessed by positron emission tomography. DESIGN Experimental study. SETTING Research laboratory of a university hospital. SUBJECTS Six female piglets. INTERVENTIONS After oleic acid-induced lung injury, all animals were studied in supine and prone position at both positive end-expiratory pressure 0 and positive end-expiratory pressure 10 cm H2O. MEASUREMENTS AND MAIN RESULTS In each experimental condition, regional lung perfusion and ventilation were assessed with positron emission tomograph using intravenous 15O-labeled water and inhaled nitrogen-13. Nonaerated lung weight was assessed with positron emission tomograph, and alveolar recruitment was defined as the difference of nonaerated lung weight between conditions. Positive end-expiratory pressure was associated with significant alveolar recruitment (130 +/- 85 and 65 +/- 29 g of lung in supine and prone position, respectively [p < 0.05 vs. 0]), whereas recruitment induced by posture was not statistically significant (77 +/- 97 g with positive end-expiratory pressure 0 and 13 +/- 19 g with positive end-expiratory pressure 10 [p > 0.05 vs. 0]). Regardless the posture, positive end-expiratory pressure redistributed both perfusion and ventilation toward dependent regions. Recruitment by positive end-expiratory pressure was restricted to dorsal regions in supine position, but extended diffusely along the ventral-to-dorsal dimension in prone position. Prone position was associated with recruitment in dorsal regions with concomitant derecruitment in ventral regions, magnitude of this being reduced by positive end-expiratory pressure. Prone position redistributed ventilation toward dorsal and ventral regions at positive end-expiratory pressure 0 and positive end-expiratory pressure, respectively. Finally, prone position redistributed perfusion toward ventral regions, to an extent amplified by positive end-expiratory pressure. CONCLUSIONS Positive end-expiratory pressure and posture act synergistically by redistributing lung regional perfusion toward ventral regions, but have antagonistic effects on regional ventilation.
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Suhonen H, Porra L, Bayat S, Sovijärvi ARA, Suortti P. Simultaneousin vivosynchrotron radiation computed tomography of regional ventilation and blood volume in rabbit lung using combined K-edge and temporal subtraction. Phys Med Biol 2008; 53:775-91. [DOI: 10.1088/0031-9155/53/3/016] [Citation(s) in RCA: 24] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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Murphy AR, Fréchet JMJ. Organic Semiconducting Oligomers for Use in Thin Film Transistors. Chem Rev 2007; 107:1066-96. [PMID: 17428023 DOI: 10.1021/cr0501386] [Citation(s) in RCA: 1206] [Impact Index Per Article: 70.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Amanda R Murphy
- Department of Chemistry, University of California, Berkeley, California 94720-1460, USA
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Hutchison GR, Ratner MA, Marks TJ. Hopping Transport in Conductive Heterocyclic Oligomers: Reorganization Energies and Substituent Effects. J Am Chem Soc 2005; 127:2339-50. [PMID: 15713114 DOI: 10.1021/ja0461421] [Citation(s) in RCA: 393] [Impact Index Per Article: 20.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Molecular scale charge motion in disordered organic materials at ambient temperature occurs via a hopping-type mechanism with rates dictated both by the charge transfer integral and by the reorganization energy due to geometric relaxation. This contribution presents a systematic theoretical analysis of cation internal reorganization energies for a broad family of organic oligoheterocycles-variation of reorganization energy with oligomer chain length, heteroatom identity, and a range of heterocycle substituents provides key information on important structural properties governing internal reorganization energies. At room temperature, the range in reorganization energies induced by substituent variations corresponds to a >10(2)-fold variation in intrinsic hole transfer rate, suggesting that changes in reorganization energy dominate variations in charge-transfer rates for many semiconducting/conducting oligomers.
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Affiliation(s)
- Geoffrey R Hutchison
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208-3113, USA
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Sundar VC, Zaumseil J, Podzorov V, Menard E, Willett RL, Someya T, Gershenson ME, Rogers JA. Elastomeric Transistor Stamps: Reversible Probing of Charge Transport in Organic Crystals. Science 2004; 303:1644-6. [PMID: 15016993 DOI: 10.1126/science.1094196] [Citation(s) in RCA: 685] [Impact Index Per Article: 34.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
Abstract
We introduce a method to fabricate high-performance field-effect transistors on the surface of freestanding organic single crystals. The transistors are constructed by laminating a monolithic elastomeric transistor stamp against the surface of a crystal. This method, which eliminates exposure of the fragile organic surface to the hazards of conventional processing, enables fabrication of rubrene transistors with charge carrier mobilities as high as approximately 15 cm2/V.s and subthreshold slopes as low as 2nF.V/decade.cm2. Multiple relamination of the transistor stamp against the same crystal does not affect the transistor characteristics; we exploit this reversibility to reveal anisotropic charge transport at the basal plane of rubrene.
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Affiliation(s)
- Vikram C Sundar
- Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, USA
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Katz HE, Otsuki J, Yamazaki K, Suka A, Takido T, Lovinger AJ, Raghavachari K. Unsymmetricaln-Channel Semiconducting Naphthalenetetracarboxylic Diimides Assembled via Hydrogen Bonds. CHEM LETT 2003. [DOI: 10.1246/cl.2003.508] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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Frerichs I, Hinz J, Herrmann P, Weisser G, Hahn G, Quintel M, Hellige G. Regional lung perfusion as determined by electrical impedance tomography in comparison with electron beam CT imaging. IEEE TRANSACTIONS ON MEDICAL IMAGING 2002; 21:646-652. [PMID: 12166861 PMCID: PMC7186030 DOI: 10.1109/tmi.2002.800585] [Citation(s) in RCA: 116] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/21/2001] [Revised: 02/14/2002] [Indexed: 05/23/2023]
Abstract
The aim of the experiments was to check the feasibility of pulmonary perfusion imaging by functional electrical impedance tomography (EIT) and to compare the EIT findings with electron beam computed tomography (EBCT) scans. In three pigs, a Swan-Ganz catheter was positioned in a pulmonary artery branch and hypertonic saline solution or a radiographic contrast agent were administered as boli through the distal or proximal openings of the catheter. During the administration through the proximal opening, the balloon at the tip of the catheter was either deflated or inflated. The latter case represented a perfusion defect. The series of EIT scans of the momentary distribution of electrical impedance within the chest were obtained during each saline bolus administration at a rate of 13/s. EBCT scans were acquired at a rate of 3.3/s during bolus administrations of the radiopaque contrast material under the same steady-state conditions. The EIT data were used to generate local time-impedance curves and functional EIT images showing the perfusion of a small lung region, both lungs with a perfusion defect and complete both lungs during bolus administration through the distal and proximal catheter opening with an inflated or deflated balloon, respectively. The results indicate that EIT imaging of lung perfusion is feasible when an electrical impedance contrast agent is used.
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Affiliation(s)
- Inéz Frerichs
- Department of Anesthesiological Research, Center of Anesthesiology, Emergency and Intensive Care Medicine, University of Göttingen, Germany.
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