The work function of few-layer graphene

Adsorption Behavior of NO and NO2 on Two-Dimensional As, Sb, and Bi Materials: First-Principles Insights

To address the most significant environmental challenges, the quest for high-performance gas sensing materials is crucial. Among numerous two-dimensional materials, this study investigates the gas-sensitive capabilities of monolayer As, Sb, and Bi materials. To compare the gas detection abilities of these three materials, we employ first-principles calculations to comprehensively study the adsorption behavior of NO and NO2 gas molecules on the material surfaces. The results indicate that monolayer Bi material exhibits reasonable adsorption distances, substantial adsorption energies, and significant charge transfer for both NO and NO2 gases. Therefore, among the materials studied, it demonstrates the best gas detection capability. Furthermore, monolayer As and Sb materials exhibit remarkably high capacities for adsorbing NO and NO2 gas molecules, firmly interacting with the gas molecules. Gas adsorption induces changes in the material's work function, suggesting the potential application of these two materials as catalysts.

A simple efficient algorithm for molecular simulations of constant potential electrodes

Increasingly, society requires high power, high energy storage devices for applications ranging from electric vehicles to buffers on the electric grid. Supercapacitors are a promising contribution to meeting these demands, though there still remain unsolved practical problems. Molecular dynamics simulations can shed light on the relevant molecular level processes in electric double layer capacitors, but these simulations are computationally very demanding. Our focus here is on the algorithmic complexity of the constant potential method (CPM), which uses dedicated electrostatics solvers to maintain a fixed potential difference between two conducting electrodes. We show how any standard electrostatics solver-capable of calculating the energies and forces on all atoms-can be used to implement CPM with a minimum of coding. As an example, we compare our generalized implementation of CPM, based on invocations of the particle-particle-particle-mesh routine of the Large-scale Atomic/Molecular Massively Parallel Simulator, with a traditional implementation based on a dedicated re-implementation of Ewald summation. Both methods yield comparable results on four test systems, with the former achieving a substantial gain in speed and improved scalability. The step from dedicated electrostatic solvers to generic routines is made possible by noting that CPM's traditional narrow Gaussian point-spread of atomic charges on the electrodes effectively endows point-like atoms with chemical hardness, i.e., an intra-atomic energy quadratic in the charge.

Thickness-Dependent Room-Temperature Optoelectronic Gas Sensing Performances of 2D Nonlayered Indium Oxide Crystals from a Liquid Metal Printing Process

Due to excellent gas sensing performances, such as high responsivity, good selectivity, and long-term stability, two-dimensional (2D) nonlayered metal oxide semiconductors have attracted wide attention. However, their thickness-dependent gas sensing behaviors are rarely investigated, which is critical in the development of practical 2D sensors. In this work, 2D In2O3 crystals with a range of thicknesses are realized by extracting the self-limited oxide layer from the liquid indium droplets in a controlled environment. A strong thickness-dependent optoelectronic NO2 sensing behavior at room temperature is observed. While full reversibility and excellent selectivity toward NO2 are shown despite the thicknesses of 2D In2O3, the 1.9 nm thick In2O3 exhibits a maximum response amplitude (ΔI/Ig = 1300) for 10 ppm of NO2 at room temperature with 365 nm light irradiation, which is about 18, 58, and 810 times larger than those of its 3.1 nm thick, 4.5 nm thick, and 6.2 nm thick counterparts, respectively. The shortest response and recovery times (i.e., 40 s/48 s) are demonstrated for the 1.88 nm thick In2O3 as well. We correlate such a phenomenon with the change in the In2O3 band structure, which is influenced by the thickness of 2D crystals. This work provides in-depth knowledge of the thickness-dependent gas-sensing performances of emerging 2D nonlayered metal oxide crystals, as well as the opportunities to develop next-generation high-performing room-temperature gas sensors.

Self-Driven Gr/WSe2/Gr Photodetector with High Performance Based on Asymmetric Schottky van der Waals Contacts

Two-dimensional (2D) self-driven photodetectors have a wide range of applications in wearable, imaging, and flexible electronics. However, the preparation of most self-powered photodetectors is still complex and time-consuming. Simultaneously, the constant work function of a metal, numerous defects, and a large Schottky barrier at the 2D/metal interface hinder the transmission and collection of optical carriers, which will suppress the optical responsivity of the device. This paper proposed a self-driven graphene/WSe2/graphene (Gr/WSe2/Gr) photodetector with asymmetric Schottky van der Waals (vdWs) contacts. The vdWs contacts are formed by transferring Gr as electrodes using the dry-transfer method, obviating the limitations of defects and Fermi-level pinning at the interface of electrodes made by conventional metal deposition methods to a great extent and resulting in superior dynamic response, which leads to a more efficient and faster collection of photogenerated carriers. This work also demonstrates that the significant surface potential difference of Gr electrodes is a crucial factor to ensure their superior performance. The self-driven Gr/WSe2/Gr photodetector exhibits an ultrahigh Ilight/Idark ratio of 106 with a responsivity value of 20.31 mA/W and an open-circuit voltage of 0.37 V at zero bias. The photodetector also has ultrafast response speeds of 42.9 and 56.0 μs. This paper provides a feasible way to develop self-driven optoelectronic devices with a simple structure and excellent performance.

Etch and Print: Graphene-Based Diodes for Silicon Technology

The graphene-silicon junction is one of the simplest conceivable interfaces in graphene-integrated semiconductor technology that can lead to the development of future generation of electronic and optoelectronic devices. However, graphene's integration is currently expensive and time-consuming and shows several challenges in terms of large-scale device fabrication, effectively preventing the possibility of implementing this technology into industrial processes. Here, we show a simple and cost-effective fabrication technique, based on inkjet printing, for the realization of printed graphene-silicon rectifying devices. The printed graphene-silicon diodes show an ON/OFF ratio higher than 3 orders of magnitude and a significant photovoltaic effect, resulting in a fill factor of ∼40% and a photocurrent efficiency of ∼2%, making the devices suitable for both electronic and optoelectronic applications. Finally, we demonstrate large-area pixeled photodetectors and compatibility with back-end-of-line fabrication processes.

Theoretical characterisation of electron tunnelling from granular activated carbon to electron accepting organisms in direct interspecies electron transfer

Direct interspecies electron transfer (DIET) has been identified as an efficient metabolism between symbiotically interacting organisms. One method of DIET uses conductive materials (e.g., granular activated carbon (GAC)) as a medium to shuttle electrons from electron donating organisms (eg., Geobacter metallireducens) to electron accepting organisms (e.g., Geobacter sulfurreducens and Methanosarcina barkeri). Conductive materials such as GAC, become negatively charged in DIET processes due to reduction by electron donating organisms. This high excess electron density in GAC leads to quantum tunnelling of electrons being a significant electron transfer mechanism for DIET. Thus, a theoretical model obeying the Wentzel–Kramers–Brillouin (WKB) approximation and Fermi–Dirac statistics was developed and simulated. In the model, the electron tunnelling transfer barrier was described by an effective rectangular barrier. The result of our 1D tunnelling simulations indicates that within 29.4 nm of the GAC, tunnelling can sufficiently supply electrons from GAC to G. sulfurreducens and M. barkeri. The phenomenon of tunnelling may also have significance as a stimulant of chemotaxis for G. sulfurreducens and other electron accepting microbes when attempting to adsorb onto GAC. This study sheds light on quantum tunnelling’s significant potential in both bacterium and archaeon DIET-centric processes.

Highly stable semitransparent multilayer graphene/LaVO3vertical-heterostructure photodetectors

A heterostructure composed of a combination of semi-metallic graphene (Gr) and high-absorption LaVO₃is ideal for high-performance translucent photodetector (PD) applications. Here, we present multilayer Gr/LaVO₃vertical-heterostructure semitransparent PDs with various layer numbers (L_n). AtL_n= 2, the PD shows the best performance with a responsivity (R) of 0.094 A W^-1and a specific detectivity (D*) of 7.385 × 10⁷cm Hz^1/2W^-1at 532 nm. Additionally, the average visible transmittance of the PD is 63%, i.e. it is semitransparent. We increased photocurrent (PC) by approximately 13%, from 0.564 to 0.635μA cm^-2by using an Al reflector on the semitransparent PD. The PC of an unencapsulated PD maintains about 86% (from 0.571 to 0.493μA cm^-2) of its initial PC value after 2000 h at 25 °C temperature/30% relative humidity, showing good stability. This behavior is superior to that of previously reported graphene-based PDs. These results show that these PDs have great potential for semitransparent optoelectronic applications.

The Graphene Structure’s Effects on the Current-Voltage and Photovoltaic Characteristics of Directly Synthesized Graphene/n-Si(100) Diodes

Graphene was synthesized directly on Si(100) substrates by microwave plasma-enhanced chemical vapor deposition (MW-PECVD). The effects of the graphene structure on the electrical and photovoltaic properties of graphene/n-Si(100) were studied. The samples were investigated using Raman spectroscopy, atomic force microscopy, and by measuring current–voltage (I-V) graphs. The temperature of the hydrogen plasma annealing prior to graphene synthesis was an essential parameter regarding the graphene/Si contact I-V characteristics and photovoltaic parameters. Graphene n-type self-doping was found to occur due to the native SiO₂ interlayer at the graphene/Si junction. It was the prevalent cause of the significant decrease in the reverse current and short-circuit current. No photovoltaic effect dependence on the graphene roughness and work function could be observed.

Variations in the Effective Work Function of Graphene in a Sliding Electrical Contact Interface under Ambient Conditions

Control of work function (WF) in graphene is crucial for graphene application in electrode material replacement and electrode surface protection in optoelectronic devices. Although efforts have been made to manipulate the effective WF of graphene to optimize its application, most studies have focused on graphene employed in static electrical contact interfaces. In this work, we investigated WF variations of supported single-layer graphene (SLG) in sliding electrical contact under ambient conditions, which was achieved by sliding an electrically biased conductive atomic force microscopy (cAFM) probe on the SLG surface. The effective WF, structural properties, and chemical compositions of rubbed SLG were subsequently measured by Kelvin probe force microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy, respectively. We found that the effective WF of the rubbed SLG was governed by both the tunneling triboelectric effect (TTE) and tribochemical-induced surface functionalization. The TTE charges generated by the sliding cAFM probe tunneled through the structural defects of the SLG and were trapped underneath the SLG. The SLG will be either p-doped or n-doped depending on the type of TTE charges and the polarity of electric bias applied to the cAFM probe during the rubbing process. However, the applied electric bias also led to the electrolysis of a water meniscus formed at the cAFM probe-SLG contact, resulting in surface oxidation and the increase of SLG WF. Further absorption of ambient water molecules on the oxygenated functional groups gradually reduced the SLG WF. The influence of TTE and surface functionalization on the SLG WF depends on the magnitude and polarity of applied electric biases, relative humidity, and physical properties of the supporting substrates. Our results demonstrate that the effective WF of SLG in a sliding electrical contact interface will vary with time and might need to be considered for related applications.

Alkaline earth atom doping-induced changes in the electronic and magnetic properties of graphene: a density functional theory study

Density functional theory was used to investigate the effects of doping alkaline earth metal atoms (beryllium, magnesium, calcium and strontium) on graphene. Electron transfer from the dopant atom to the graphene substrate was observed and was further probed by a combined electron localization function/non-covalent interaction (ELF/NCI) approach. This approach demonstrates that predominantly ionic bonding occurs between the alkaline earth dopants and the substrate, with beryllium doping having a variant characteristic as a consequence of electronegativity equalization attributed to its lower atomic number relative to carbon. The ionic bonding induces spin-polarized electronic structures and lower workfunctions for Mg-, Ca-, and Sr-doped graphene systems as compared to the pristine graphene. However, due to its variant bonding characteristic, Be-doped graphene exhibits non-spin-polarized p-type semiconductor behavior, which is consistent with previous works, and an increase in workfunction relative to pristine graphene. Dirac half-metal-like behavior was predicted for magnesium doped graphene while calcium doped and strontium doped graphene were predicted to have bipolar magnetic semiconductor behavior. These changes in the electronic and magnetic properties of alkaline earth doped graphene may be of importance for spintronic and other electronic device applications.

Alkaline earth atom dopants on graphene induce work function tuning and spin polarized electronic properties by ionic bonding.

First-principles description of electrocatalytic characteristics of graphene-like materials

Graphene-like materials (GLMs) have received much attention as a potential alternative to precious metal-based electrocatalysts. However, the description of their electrocatalytic characteristics may still need to be improved, especially under constant chemical potential. Unlike the case of conventional metal electrodes, the potential drop across the electrical double layer (ϕ_D) at the electrode-electrolyte interface can deviate substantially from the applied voltage (ϕ_app) due to a shift of the Dirac point (eϕ_G) with charging. This may in turn significantly alter the interfacial capacitance (C_T) and the relationship between ϕ_app and free-energy change (ΔF). Hence, accurate evaluation of the electrode contribution is necessary to better understand and optimize the electrocatalytic properties of GLMs. In this work, we revisit and compare first-principles methods available to describe the ϕ_app-∆F relation. Grand-canonical density functional theory is used to determine ΔF as a function of ϕ_app or electrode potential (ϕ_q), from which the relative contribution of eϕ_G is estimated. In parallel, eϕ_G is directly extracted from a density functional theory analysis of the electronic structure of uncharged GLMs. The results of both methods are found to be in close agreement for pristine graphene, but their predictions deviate noticeably in the presence of adsorbates; the origin of the discrepancy is analyzed and explained. We then evaluate the application of the first-principle methods to prediction of the electrocatalytic processes, taking the reduction (hydrogenation) and oxidation (hydroxylation) reactions on pristine graphene as examples. Our work highlights the vital role of the modification of the electrode electronic structure in determining the electrocatalytic performance of GLMs.

Charge transfers and charged defects in WSe2/graphene-SiC interfaces

We report on Kelvin probe force microscopy (KPFM) and density functional theory (DFT) investigations of charge transfers in vertical heterojunctions between tungsten diselenide (WSe₂) layers and graphene on silicon carbide substrates. The experimental data reveal the existence of an interface dipole, which is shown by DFT to originate from the neutralization of the graphene n-doping by an electron transfer towards the transition metal dichalcogenide (TMD) layer. The relative vacuum level shift probed by KPFM between the TMD and the substrate stays constant when passing from monolayer to bilayer graphene, which confirms that the Schottky-Mott model can be rigorously applied to these interfaces by taking into account the charge transfer from the substrate to the TMD. DFT calculations show that the first TMD layer absorbs almost all the excess charges contained in the graphene, and that the second TMD layer shall not play a significant role in the electrostatics of the system. Negatively charged defect at the TMD edges contribute however to the electrostatic landscape probed by KPFM on both TMD layers.

Laser-Patternable Graphene Field Emitters for Plasma Displays

This paper presents a plasma display device (PDD) based on laser-induced graphene nanoribbons (LIGNs), which were directly fabricated on polyimide sheets. Superior field electron emission (FEE) characteristics, viz. a low turn-on field of 0.44 V/μm and a large field enhancement factor of 4578, were achieved for the LIGNs. Utilizing LIGNs as a cathode in a PDD showed excellent plasma illumination characteristics with a prolonged plasma lifetime stability. Moreover, the LIGN cathodes were directly laser-patternable. Such superior plasma illumination performance of LIGN-based PDDs has the potential to make a significant impact on display technology.

Tailored Tunnel Magnetoresistance Response in Three Ultrathin Chromium Trihalides

Materials that demonstrate large magnetoresistance have attracted significant interest for many decades. Extremely large tunnel magnetoresistance (TMR) has been reported by several groups across ultrathin CrI₃ by exploiting the weak antiferromagnetic coupling between adjacent layers. Here, we report a comparative study of TMR in all three chromium trihalides (CrX₃, X = Cl, Br, or I) in the two-dimensional limit. As the materials exhibit different transition temperatures and interlayer magnetic ordering in the ground state, tunneling measurements allow for an easy determination of the field-temperature phase diagram for the three systems. By changing sample thickness and biasing conditions, we then demonstrate how to maximize and further tailor the TMR response at different temperatures for each material. In particular, near the magnetic transition temperature, TMR is nonsaturating up to the highest fields measured for all three compounds owing to the large, field-induced exchange coupling.

Multilevel MoS2 Optical Memory with Photoresponsive Top Floating Gates

Optoelectronic memory devices, whose states can be controlled using electrical optical signals, are receiving much attention for their potential applications in image sensing and parallel data transmission and processes. Here, we report MoS₂-based devices with top floating gates of Au, graphene, and MoS₂. Unlike conventional floating gate memory devices, our devices have the photoresponsive floating gate at the top, acting as a charge trapping layer. Stable and reliable switching with an on/off ratio of ∼10⁶ and a retention time of >10⁴ s is achieved by illumination with 405 nm light pulses as well as application of gate voltage pulses. However, upon illumination with 532 or 635 nm light pulses, multilevel optical memory effects are observed, which are dependent on the wavelength and the optical exposure dosage. In addition, compared to the device employing a graphene floating gate, the device with an MoS₂ floating gate is more sensitive to light, suggesting that the multilevel optical memory properties originate from photoexcited carriers in the top floating gate and can be modulated by adjusting the top floating gate materials. The structure of the top floating gate may open up a new way to novel optoelectronic memory devices.

Highly Sensitive, Visible Blind, Wearable, and Omnidirectional Near-Infrared Photodetectors

Visible blind near-infrared (NIR) photodetection is essential when it comes to weapons used by military personnel, narrow band detectors used in space navigation systems, medicine, and research studies. The technological field of filterless visible blind, NIR omnidirectional photodetection and wearability is at a preliminary stage. Here, we present a filterless and lightweight design for a visible blind and wearable NIR photodetector capable of harvesting light omnidirectionally. The filterless NIR photodetector comprises the integration of distinct features of lanthanide-doped upconversion nanoparticles (UCNPs), graphene, and micropyramidal poly(dimethylsiloxane) (PDMS) film. The lanthanide-doped UCNPs are designed such that the maximum narrow band detection of NIR is easily accomplished by the photodetector even in the presence of visible light sources. Especially, the 4f ⁿ electronic configuration of lanthanide dopant ions provides for a multilevel hierarchical energy system that provides for longer lifetime of the excited states for photogenerated charge carriers to transfer to the graphene layer. The graphene layer can serve as an outstanding conduction path for photogenerated charge carrier transfer from UCNPs, and the flexible micropyramidal PDMS substrate provides an excellent platform for omnidirectional NIR light detection. Owing to these advantages, a photoresponsivity of ∼800 AW^-1 is achieved by the NIR photodetector, which is higher than the values ever reported by UCNPs-based photodetectors. In addition, the photodetector is stretchable, durable, and transparent, making it suitable for next-generation wearable optoelectronic devices.

Efficient Organic-Inorganic Hybrid Flexible Perovskite Solar Cells Prepared by Lamination of Polytriarylamine/CH3NH3PbI3/Anodized Ti Metal Substrate and Graphene/PDMS Transparent Electrode Substrate

Flexible Ti metal substrate-based efficient planar-type CH₃NH₃PbI₃ (MAPbI₃) organic-inorganic hybrid perovskite solar cells are fabricated by lamination of the flexible Ti metal substrate/dense TiO₂ electron-transporting layer formed by anodization/MAPbI₃/polytriarylamine and the graphene/polydimethylsiloxane (PDMS) transparent electrode substrate. By adjusting the anodization reaction time of the polished Ti metal substrate and the number of graphene layers in the graphene/PDMS electrode, we can demonstrate the planar-type MAPbI₃ flexible solar cells with a power conversion efficiency of 15.0% (mask area = 1 cm²) under 1 sun condition.

Image potential states from the van der Waals density functional

The image potential state is one of the fundamental surface electronic states and has a great relevance to many surface phenomena, but its accurate description is a great challenge for the semilocal density functional. Here, we use the nonlocal van der Waals density functional to describe the image potential states of graphene, graphite, and carbon nanotubes. We found that although it does not yield the correct image potential outside the surface, the van der Waals density functional improves the description of image potential states because of the nonlocal correlation potential. Our study demonstrates the usefulness of the van der Waals density functional to study the surface electronic properties.

Design and adjustment of the graphene work function via size, modification, defects, and doping: a first-principle theory study

In this work, the work function (WF) of graphenes, which are used as electronic devices, has been designed and evaluated by using the first-principle approach. Different states of graphene were considered, such as surface modification, doping, and defects. Firstly, WF strongly depends on the width of pristine graphene. A bigger width leads to a smaller WF. In addition, the effects of hydroxyls, defects, and positions of hydroxyls and defects are of concern. The WF of the graphene which is modified with hydroxyls is bigger than that of the pristine graphene. Moreover, the WF value increases with the number of hydroxyls. Positions of the hydroxyls and defects that deviated from the center have limited influence on the WF, whereas the effect of the position in the center is substantial. Lastly, B, N, Al, Si, and P are chosen as the doping elements. The n-type graphene doped with N and P atoms results in a huge decline in the WF, whereas the p-type graphene doped with B and Al atoms causes a great increase in the WF. However, the doping of Al in graphene is difficult, whereas the doping of B and N is easier. These discoveries will provide heavy support for the production of graphene-based devices.

Unlocking the Electrocatalytic Activity of Antimony for CO2 Reduction by Two-Dimensional Engineering of the Bulk Material

Two-dimensional (2D) materials are known to be useful in catalysis. Engineering 3D bulk materials into the 2D form can enhance the exposure of the active edge sites, which are believed to be the origin of the high catalytic activity. Reported herein is the production of 2D "few-layer" antimony (Sb) nanosheets by cathodic exfoliation. Application of this 2D engineering method turns Sb, an inactive material for CO₂ reduction in its bulk form, into an active 2D electrocatalyst for reduction of CO₂ to formate with high efficiency. The high activity is attributed to the exposure of a large number of catalytically active edge sites. Moreover, this cathodic exfoliation process can be coupled with the anodic exfoliation of graphite in a single-compartment cell for in situ production of a few-layer Sb nanosheets and graphene composite. The observed increased activity of this composite is attributed to the strong electronic interaction between graphene and Sb.