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Leshchenko ED, Dubrovskii VG. An Overview of Modeling Approaches for Compositional Control in III-V Ternary Nanowires. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13101659. [PMID: 37242075 DOI: 10.3390/nano13101659] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/25/2023] [Revised: 05/11/2023] [Accepted: 05/15/2023] [Indexed: 05/28/2023]
Abstract
Modeling of the growth process is required for the synthesis of III-V ternary nanowires with controllable composition. Consequently, new theoretical approaches for the description of epitaxial growth and the related chemical composition of III-V ternary nanowires based on group III or group V intermix were recently developed. In this review, we present and discuss existing modeling strategies for the stationary compositions of III-V ternary nanowires and try to systematize and link them in a general perspective. In particular, we divide the existing approaches into models that focus on the liquid-solid incorporation mechanisms in vapor-liquid-solid nanowires (equilibrium, nucleation-limited, and kinetic models treating the growth of solid from liquid) and models that provide the vapor-solid distributions (empirical, transport-limited, reaction-limited, and kinetic models treating the growth of solid from vapor). We describe the basic ideas underlying the existing models and analyze the similarities and differences between them, as well as the limitations and key factors influencing the stationary compositions of III-V nanowires versus the growth method. Overall, this review provides a basis for choosing a modeling approach that is most appropriate for a particular material system and epitaxy technique and that underlines the achieved level of the compositional modeling of III-V ternary nanowires and the remaining gaps that require further studies.
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Affiliation(s)
- Egor D Leshchenko
- Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, Russia
| | - Vladimir G Dubrovskii
- Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, Russia
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2
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Dubrovskii VG. Theory of MBE Growth of Nanowires on Reflecting Substrates. NANOMATERIALS 2022; 12:nano12020253. [PMID: 35055270 PMCID: PMC8781942 DOI: 10.3390/nano12020253] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/18/2021] [Revised: 01/09/2022] [Accepted: 01/10/2022] [Indexed: 02/01/2023]
Abstract
Selective area growth (SAG) of III-V nanowires (NWs) by molecular beam epitaxy (MBE) and related epitaxy techniques offer several advantages over growth on unpatterned substrates. Here, an analytic model for the total flux of group III atoms impinging NWs is presented, which accounts for specular re-emission from the mask surface and the shadowing effect in the absence of surface diffusion from the substrate. An expression is given for the shadowing length of NWs corresponding to the full shadowing of the mask. Axial and radial NW growths are considered in different stages, including the stage of purely axial growth, intermediate stage with radial growth, and asymptotic stage, where the NWs receive the maximum flux determined by the array pitch. The model provides good fits with the data obtained for different vapor-liquid-solid and catalyst-free III-V NWs.
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Affiliation(s)
- Vladimir G Dubrovskii
- Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, Russia
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3
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Demontis V, Zannier V, Sorba L, Rossella F. Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered Arrays. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:2079. [PMID: 34443910 PMCID: PMC8398085 DOI: 10.3390/nano11082079] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/17/2021] [Revised: 08/07/2021] [Accepted: 08/10/2021] [Indexed: 12/18/2022]
Abstract
Ordered arrays of vertically aligned semiconductor nanowires are regarded as promising candidates for the realization of all-dielectric metamaterials, artificial electromagnetic materials, whose properties can be engineered to enable new functions and enhanced device performances with respect to naturally existing materials. In this review we account for the recent progresses in substrate nanopatterning methods, strategies and approaches that overall constitute the preliminary step towards the bottom-up growth of arrays of vertically aligned semiconductor nanowires with a controlled location, size and morphology of each nanowire. While we focus specifically on III-V semiconductor nanowires, several concepts, mechanisms and conclusions reported in the manuscript can be invoked and are valid also for different nanowire materials.
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Affiliation(s)
- Valeria Demontis
- NEST, Scuola Normale Superiore and Istituto Nanoscienze CNR, Piazza S. Silvestro 12, 56127 Pisa, Italy; (V.Z.); (L.S.)
| | - Valentina Zannier
- NEST, Scuola Normale Superiore and Istituto Nanoscienze CNR, Piazza S. Silvestro 12, 56127 Pisa, Italy; (V.Z.); (L.S.)
| | - Lucia Sorba
- NEST, Scuola Normale Superiore and Istituto Nanoscienze CNR, Piazza S. Silvestro 12, 56127 Pisa, Italy; (V.Z.); (L.S.)
| | - Francesco Rossella
- NEST, Scuola Normale Superiore and Istituto Nanoscienze CNR, Piazza S. Silvestro 12, 56127 Pisa, Italy; (V.Z.); (L.S.)
- Dipartimento di Scienze Fisiche, Informatiche e Matematiche, Università di Modena e Reggio Emilia, Via Campi 213/A, 41125 Modena, Italy
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4
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Johnson S, Pokharel R, Lowe M, Kuchoor H, Nalamati S, Davis K, Rathnayake H, Iyer S. Study of patterned GaAsSbN nanowires using sigmoidal model. Sci Rep 2021; 11:4651. [PMID: 33633245 PMCID: PMC7907112 DOI: 10.1038/s41598-021-83973-9] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/21/2020] [Accepted: 02/05/2021] [Indexed: 01/31/2023] Open
Abstract
This study presents the first report on patterned nanowires (NWs) of dilute nitride GaAsSbN on p-Si (111) substrates by self-catalyzed plasma-assisted molecular beam epitaxy. Patterned NW array with GaAsSbN of Sb composition of 3% as a stem provided the best yield of vertical NWs. Large bandgap tuning of ~ 75 meV, as ascertained from 4 K photoluminescence (PL), over a pitch length variation of 200-1200 nm has been demonstrated. Pitch-dependent axial and radial growth rates show a logistic sigmoidal growth trend different from those commonly observed in other patterned non-nitride III-V NWs. The sigmoidal fitting provides further insight into the PL spectral shift arising from differences in Sb and N incorporation from pitch induced variation in secondary fluxes. Results indicate that sigmoidal fitting can be a potent tool for designing patterned NW arrays of optimal pitch length for dilute nitrides and other highly mismatched alloys and heterostructures.
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Affiliation(s)
- Sean Johnson
- grid.261037.10000 0001 0287 4439Department of Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, NC 27411 USA
| | - Rabin Pokharel
- grid.261037.10000 0001 0287 4439Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC 27401 USA
| | - Michael Lowe
- grid.261037.10000 0001 0287 4439Department of Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, NC 27411 USA
| | - Hirandeep Kuchoor
- grid.261037.10000 0001 0287 4439Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC 27401 USA
| | - Surya Nalamati
- grid.261037.10000 0001 0287 4439Department of Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, NC 27411 USA
| | - Klinton Davis
- grid.266860.c0000 0001 0671 255XNanoscience, Joint School of Nanoscience and Nanoengineering, University of North Carolina At Greensboro, Greensboro, NC 27401 USA
| | - Hemali Rathnayake
- grid.266860.c0000 0001 0671 255XNanoscience, Joint School of Nanoscience and Nanoengineering, University of North Carolina At Greensboro, Greensboro, NC 27401 USA
| | - Shanthi Iyer
- grid.261037.10000 0001 0287 4439Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC 27401 USA
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5
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Greenberg Y, Kelrich A, Cohen S, Kar-Narayan S, Ritter D, Calahorra Y. Strain-Mediated Bending of InP Nanowires through the Growth of an Asymmetric InAs Shell. NANOMATERIALS 2019; 9:nano9091327. [PMID: 31527424 PMCID: PMC6781057 DOI: 10.3390/nano9091327] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/22/2019] [Revised: 09/12/2019] [Accepted: 09/13/2019] [Indexed: 11/16/2022]
Abstract
Controlling nanomaterial shape beyond its basic dimensionality is a concurrent challenge tackled by several growth and processing avenues. One of these is strain engineering of nanowires, implemented through the growth of asymmetrical heterostructures. Here, we report metal-organic molecular beam epitaxy of bent InP/InAs core/shell nanowires brought by precursor flow directionality in the growth chamber. We observe the increase of bending with decreased core diameter. We further analyze the composition of a single nanowire and show through supporting finite element simulations that strain accommodation following the lattice mismatch between InP and InAs dominates nanowire bending. The simulations show the interplay between material composition, shell thickness, and tapering in determining the bending. The simulation results are in good agreement with the experimental bending curvature, reproducing the radius of 4.3 µm (±10%), for the 2.3 µm long nanowire. The InP core of the bent heterostructure was found to be compressed at about 2%. This report provides evidence of shape control and strain engineering in nanostructures, specifically through the exchange of group-V materials in III-V nanowire growth.
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Affiliation(s)
- Ya'akov Greenberg
- Department of Electrical Engineering, Technion, Haifa 32000, Israel.
| | - Alexander Kelrich
- Department of Electrical Engineering, Technion, Haifa 32000, Israel.
| | - Shimon Cohen
- Department of Electrical Engineering, Technion, Haifa 32000, Israel.
| | - Sohini Kar-Narayan
- Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK.
| | - Dan Ritter
- Department of Electrical Engineering, Technion, Haifa 32000, Israel.
| | - Yonatan Calahorra
- Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK.
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6
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de Lépinau R, Scaccabarozzi A, Patriarche G, Travers L, Collin S, Cattoni A, Oehler F. Evidence and control of unintentional As-rich shells in GaAs 1-x P x nanowires. NANOTECHNOLOGY 2019; 30:294003. [PMID: 31032812 DOI: 10.1088/1361-6528/ab14c1] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We report on the detailed composition of ternary GaAsP nanowires (NWs) grown using self-catalyzed vapor-liquid-solid (VLS) growth by molecular beam epitaxy. We evidence the formation of an unintentional shell, which enlarges by vapor-solid growth concurrently to the main VLS-grown core. The NW core and unintentional shell have typically different chemical compositions if no effort is made to adjust the growth conditions. The compositions can be made equal by changing the substrate temperature and the P/As flux ratio in the vapor phase. In all cases, we still observe the existence of a P-rich interface between the GaAsP NW core and the unintentional shell, even if favorable growth conditions are used.
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Affiliation(s)
- Romaric de Lépinau
- IPVF, Institut Photovoltaïque d'Île-de-France, F-91120 Palaiseau, France. C2N, Centre de Nanosciences et de Nanotechnologies, UMR 9001 CNRS, Univ. Paris Sud, Univ. Paris-Saclay, F-91120 Palaiseau, France
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7
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Schroth P, Al Humaidi M, Feigl L, Jakob J, Al Hassan A, Davtyan A, Küpers H, Tahraoui A, Geelhaar L, Pietsch U, Baumbach T. Impact of the Shadowing Effect on the Crystal Structure of Patterned Self-Catalyzed GaAs Nanowires. NANO LETTERS 2019; 19:4263-4271. [PMID: 31150261 DOI: 10.1021/acs.nanolett.9b00380] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The growth of regular arrays of uniform III-V semiconductor nanowires is a crucial step on the route toward their application-relevant large-scale integration onto the Si platform. To this end, not only does optimal vertical yield, length, and diameter uniformity have to be engineered, but also, control over the nanowire crystal structure has to be achieved. Depending on the particular application, nanowire arrays with varying area density are required for optimal device efficiency. However, the nanowire area density substantially influences the nanowire growth and presents an additional challenge for nanowire device engineering. We report on the simultaneous in situ X-ray investigation of regular GaAs nanowire arrays with different area density during self-catalyzed vapor-liquid-solid growth on Si by molecular-beam epitaxy. Our results give novel insight into selective-area growth and demonstrate that shadowing of the Ga flux, occurring in dense nanowire arrays, has a crucial impact on the evolution of nanowire crystal structure. We observe that the onset of Ga flux shadowing, dependent on array pitch and nanowire length, is accompanied by an increase of the wurtzite formation rate. Our results moreover reveal the paramount role of the secondary reflected Ga flux for VLS NW growth (specifically, that flux that is reflected directly into the liquid Ga droplet).
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Affiliation(s)
- Philipp Schroth
- Solid State Physics, Department of Physics , University of Siegen , Adolf-Reichwein-Straße 2 , D-57068 Siegen , Germany
- Laboratory for Applications of Synchrotron Radiation , Karlsruhe Institute of Technology , Kaiserstraße 12 , D-76131 Karlsruhe , Germany
- Institute for Photon Science and Synchrotron Radiation , Karlsruhe Institute of Technology , Hermann-von-Helmholtz-Platz 1 , D-76344 Eggenstein-Leopoldshafen , Germany
| | - Mahmoud Al Humaidi
- Solid State Physics, Department of Physics , University of Siegen , Adolf-Reichwein-Straße 2 , D-57068 Siegen , Germany
| | - Ludwig Feigl
- Institute for Photon Science and Synchrotron Radiation , Karlsruhe Institute of Technology , Hermann-von-Helmholtz-Platz 1 , D-76344 Eggenstein-Leopoldshafen , Germany
| | - Julian Jakob
- Laboratory for Applications of Synchrotron Radiation , Karlsruhe Institute of Technology , Kaiserstraße 12 , D-76131 Karlsruhe , Germany
- Institute for Photon Science and Synchrotron Radiation , Karlsruhe Institute of Technology , Hermann-von-Helmholtz-Platz 1 , D-76344 Eggenstein-Leopoldshafen , Germany
| | - Ali Al Hassan
- Solid State Physics, Department of Physics , University of Siegen , Adolf-Reichwein-Straße 2 , D-57068 Siegen , Germany
| | - Arman Davtyan
- Solid State Physics, Department of Physics , University of Siegen , Adolf-Reichwein-Straße 2 , D-57068 Siegen , Germany
| | - Hanno Küpers
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V. , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Abbes Tahraoui
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V. , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Lutz Geelhaar
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V. , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Ullrich Pietsch
- Solid State Physics, Department of Physics , University of Siegen , Adolf-Reichwein-Straße 2 , D-57068 Siegen , Germany
| | - Tilo Baumbach
- Laboratory for Applications of Synchrotron Radiation , Karlsruhe Institute of Technology , Kaiserstraße 12 , D-76131 Karlsruhe , Germany
- Institute for Photon Science and Synchrotron Radiation , Karlsruhe Institute of Technology , Hermann-von-Helmholtz-Platz 1 , D-76344 Eggenstein-Leopoldshafen , Germany
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8
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Dubrovskii VG. Evolution of the Length and Radius of Catalyst-Free III-V Nanowires Grown by Selective Area Epitaxy. ACS OMEGA 2019; 4:8400-8405. [PMID: 31459928 PMCID: PMC6648095 DOI: 10.1021/acsomega.9b00525] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/25/2019] [Accepted: 04/24/2019] [Indexed: 06/10/2023]
Abstract
We present a new model for the length and radius evolution of catalyst-free III-V nanowires grown by selective area epitaxy. We consider simultaneous axial and radial growth of nanowires, which is more typical for this technique compared to the vapor-liquid-solid growth of nanowires. Analytic expressions for the time evolution of the nanowire length and radius are derived, showing the following properties. As long as the nanowire length is shorter than the collection length of group III atoms on the sidewalls, the length evolves superlinearly and the radius evolves linearly with time. For longer nanowires, both the length and radius increase sublinearly with time. The scaling growth laws are controlled by a single parameter that depends on group V flux. The model fits well the data on the selective area growth of InAs and GaAs nanowires by different techniques. Overall, these results can be used for controlling the catalyst-free growth of III-V nanowires and their morphology, including ternary III-V material systems.
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9
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Halder NN, Kelrich A, Cohen S, Ritter D. Controlled axial and radial growth of InP nanowires by metal-organic molecular beam epitaxy using the selective-area vapor-liquid-solid approach. NANOTECHNOLOGY 2018; 29:415602. [PMID: 30040074 DOI: 10.1088/1361-6528/aad584] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Controlling the transition from axial to radial growth is essential for advanced III-V nanowire (NW) technology. Growth temperature and precursor flux affect this transition in a complicated manner. Here, we report on experiments designed to map the axial to radial growth transition of InP NWs prepared by the selective-area vapor-liquid-solid method during metal-organic molecular beam epitaxy. An optimized growth procedure for axial to radial switching was obtained, maintaining the pure wurtzite crystal phase of the NWs.
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Affiliation(s)
- Nripendra N Halder
- Electrical Engineering Faculty, Technion Israel Institute of Technology, Haifa 32000, Israel
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10
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Oehler F, Cattoni A, Scaccabarozzi A, Patriarche G, Glas F, Harmand JC. Measuring and Modeling the Growth Dynamics of Self-Catalyzed GaP Nanowire Arrays. NANO LETTERS 2018; 18:701-708. [PMID: 29257888 DOI: 10.1021/acs.nanolett.7b03695] [Citation(s) in RCA: 35] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The bottom-up fabrication of regular nanowire (NW) arrays on a masked substrate is technologically relevant, but the growth dynamic is rather complex due to the superposition of severe shadowing effects that vary with array pitch, NW diameter, NW height, and growth duration. By inserting GaAsP marker layers at a regular time interval during the growth of a self-catalyzed GaP NW array, we are able to retrieve precisely the time evolution of the diameter and height of a single NW. We then propose a simple numerical scheme which fully computes shadowing effects at play in infinite arrays of NWs. By confronting the simulated and experimental results, we infer that re-emission of Ga from the mask is necessary to sustain the NW growth while Ga migration on the mask must be negligible. When compared to random cosine or random uniform re-emission from the mask, the simple case of specular reflection on the mask gives the most accurate account of the Ga balance during the growth.
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Affiliation(s)
- Fabrice Oehler
- Centre for Nanoscience and Nanotechnology, CNRS, Université Paris-Sud, Université Paris-Saclay , Route de Nozay, 91460 Marcoussis, France
| | - Andrea Cattoni
- Centre for Nanoscience and Nanotechnology, CNRS, Université Paris-Sud, Université Paris-Saclay , Route de Nozay, 91460 Marcoussis, France
| | - Andrea Scaccabarozzi
- Centre for Nanoscience and Nanotechnology, CNRS, Université Paris-Sud, Université Paris-Saclay , Route de Nozay, 91460 Marcoussis, France
- Institut Photovoltaïque d'Ile-de-France , 92160 Antony, France
| | - Gilles Patriarche
- Centre for Nanoscience and Nanotechnology, CNRS, Université Paris-Sud, Université Paris-Saclay , Route de Nozay, 91460 Marcoussis, France
| | - Frank Glas
- Centre for Nanoscience and Nanotechnology, CNRS, Université Paris-Sud, Université Paris-Saclay , Route de Nozay, 91460 Marcoussis, France
| | - Jean-Christophe Harmand
- Centre for Nanoscience and Nanotechnology, CNRS, Université Paris-Sud, Université Paris-Saclay , Route de Nozay, 91460 Marcoussis, France
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11
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Halder NN, Kelrich A, Cohen S, Ritter D. Pure wurtzite GaP nanowires grown on zincblende GaP substrates by selective area vapor liquid solid epitaxy. NANOTECHNOLOGY 2017; 28:465603. [PMID: 28885983 DOI: 10.1088/1361-6528/aa8b60] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We report on the growth of single phase wurtzite (WZ) GaP nanowires (NWs) on GaP (111) B substrates by metal organic molecular beam epitaxy following the selective area vapor-liquid-solid (SA-VLS) approach. During the SA-VLS process, precursors are supplied directly to the NW sidewalls, and the short diffusion length of gallium (or its precursors) does not significantly limit axial growth. Transmission electron microscopy (TEM) images reveal that no stacking faults are present along a 600 nm long NW. The lattice constants of the pure WZ GaP obtained from the TEM images agree with values determined previously by x-ray diffraction from non-pure NW ensembles.
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Affiliation(s)
- Nripendra N Halder
- Electrical Engineering Faculty, Technion Israel Institute of Technology, Haifa 32000, Israel
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12
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Sorias O, Kelrich A, Gladstone R, Ritter D, Orenstein M. Epitaxial Nanoflag Photonics: Semiconductor Nanoemitters Grown with Their Nanoantennas. NANO LETTERS 2017; 17:6011-6017. [PMID: 28858507 DOI: 10.1021/acs.nanolett.7b02283] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Semiconductor nanostructures are desirable for electronics, photonics, quantum circuitry, and energy conversion applications as well as for fundamental science. In photonics, optical nanoantennas mediate the large size difference between photons and semiconductor nanoemitters or detectors and hence are instrumental for exhibiting high efficiency. In this work we present epitaxially grown InP nanoflags as optically active nanostructures encapsulating the desired characteristics of a photonic emitter and an efficient epitaxial nanoantenna. We experimentally characterize the polarized and directional emission of the nanoflag-antenna and show the control of these properties by means of structure, dimensions, and constituents. We analyze field enhancement and light extraction by the semiconductor nanoflag antenna, which yield comparable values to enhancement factors of metallic plasmonic antennas. We incorporated quantum emitters within the nanoflag structure and characterized their emission properties. Merging of active nanoemitters with nanoantennas at a single growth process enables a new class of devices to be used in nanophotonics applications.
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Affiliation(s)
- Ofir Sorias
- Electrical Engineering Faculty, Technion - Israel Institute of Technology , Haifa 32000, Israel
| | - Alexander Kelrich
- Electrical Engineering Faculty, Technion - Israel Institute of Technology , Haifa 32000, Israel
| | - Ran Gladstone
- Electrical Engineering Faculty, Technion - Israel Institute of Technology , Haifa 32000, Israel
| | - Dan Ritter
- Electrical Engineering Faculty, Technion - Israel Institute of Technology , Haifa 32000, Israel
| | - Meir Orenstein
- Electrical Engineering Faculty, Technion - Israel Institute of Technology , Haifa 32000, Israel
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13
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Krizek F, Kanne T, Razmadze D, Johnson E, Nygård J, Marcus CM, Krogstrup P. Growth of InAs Wurtzite Nanocrosses from Hexagonal and Cubic Basis. NANO LETTERS 2017; 17:6090-6096. [PMID: 28895746 DOI: 10.1021/acs.nanolett.7b02604] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Epitaxially connected nanowires allow for the design of electron transport experiments and applications beyond the standard two terminal device geometries. In this Letter, we present growth methods of three distinct types of wurtzite structured InAs nanocrosses via the vapor-liquid-solid mechanism. Two methods use conventional wurtzite nanowire arrays as a 6-fold hexagonal basis for growing single crystal wurtzite nanocrosses. A third method uses the 2-fold cubic symmetry of (100) substrates to form well-defined coherent inclusions of zinc blende in the center of the nanocrosses. We show that all three types of nanocrosses can be transferred undamaged to arbitrary substrates, which allows for structural, compositional, and electrical characterization. We further demonstrate the potential for synthesis of as-grown nanowire networks and for using nanowires as shadow masks for in situ fabricated junctions in radial nanowire heterostructures.
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Affiliation(s)
- Filip Krizek
- Center for Quantum Devices and Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen , 2100 Copenhagen, Denmark
| | - Thomas Kanne
- Center for Quantum Devices and Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen , 2100 Copenhagen, Denmark
| | - Davydas Razmadze
- Center for Quantum Devices and Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen , 2100 Copenhagen, Denmark
| | - Erik Johnson
- Center for Quantum Devices and Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen , 2100 Copenhagen, Denmark
- Department of Wind Energy, Technical University of Denmark , DTU Risø Campus, 4000 Roskilde, Denmark
| | - Jesper Nygård
- Center for Quantum Devices and Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen , 2100 Copenhagen, Denmark
| | - Charles M Marcus
- Center for Quantum Devices and Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen , 2100 Copenhagen, Denmark
| | - Peter Krogstrup
- Center for Quantum Devices and Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen , 2100 Copenhagen, Denmark
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14
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Fonseka HA, Ameruddin AS, Caroff P, Tedeschi D, De Luca M, Mura F, Guo Y, Lysevych M, Wang F, Tan HH, Polimeni A, Jagadish C. InP-In xGa 1-xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3-1.55 μm wavelength range. NANOSCALE 2017; 9:13554-13562. [PMID: 28872181 DOI: 10.1039/c7nr04598k] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The usability and tunability of the essential InP-InGaAs material combination in nanowire-based quantum wells (QWs) are assessed. The wurtzite phase core-multi-shell InP-InGaAs-InP nanowire QWs are characterised using cross-section transmission electron microscopy and photoluminescence measurements. The InP-InGaAs direct interface is found to be sharp while the InGaAs-InP inverted interface is more diffused, in agreement with their planar counterpart. Bright emission is observed from the single nanowires containing the QWs at room temperature, with no emission from the InP core or outer barrier. The tunability of the QW emission wavelength in the 1.3-1.55 μm communication wavelength range is demonstrated by varying the QW thickness and in the 1.3 μm range by varying the composition. The experiments are supported by simulation of the emission wavelength of the wurtzite phase InP-InGaAs QWs in the thickness range considered. The radial heterostructure is further extended to design multiple QWs with bright emission, therefore establishing the capability of this material system for nanowire based optical devices for communication applications.
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Affiliation(s)
- H A Fonseka
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601, Australia.
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Di Carlo V, Prete P, Dubrovskii VG, Berdnikov Y, Lovergine N. CdTe Nanowires by Au-Catalyzed Metalorganic Vapor Phase Epitaxy. NANO LETTERS 2017; 17:4075-4082. [PMID: 28613888 DOI: 10.1021/acs.nanolett.7b00719] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We report on the first Au-catalyzed growth of CdTe nanowires by metalorganic vapor phase epitaxy. The nanowires were obtained by a separate precursors flow process in which (i) di-isopropyl-telluride (iPr2Te) was first flowed through the reactor to ensure the formation of liquid Au-Te alloy droplets, and (ii) after purging with pure H2 to remove unreacted iPr2Te molecules from the vapor and the growth surface, (iii) dimethylcadmium (Me2Cd) was supplied to the vapor so that Cd atoms could enter the catalyst droplets, leading to nanowire self-assembly. CdTe nanowires were grown between 485 and 515 °C on (111)B-GaAs substrates, the latter preliminary deposited with a 2 μm thick (111)-oriented CdTe buffer layer onto which Au nanoparticles were provided. As-grown CdTe nanowires were vertical ([111]-aligned) straight segments of constant diameter and showed an Au-rich nanodroplet at their tips, the contact angle between the droplets and the nanowires being ∼130°. The nanowire axial growth rate appeared kinetics-limited with an activation energy ∼57 kcal/mol. However, the growth rate turned independent from the nanowire diameter. Present data are interpreted by a theoretical model explaining the nanowire growth through the diffusion transport of Te adatoms under the assumption that their growth occurs during the Me2Cd-flow process step. Low-temperature cathodoluminescence spectra recorded from single nanowires showed a well-resolved band-edge emission typical of zincblend CdTe along with a dominant band peaked at 1.539 eV.
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Affiliation(s)
- Virginia Di Carlo
- Dipartimento di Ingegneria dell'Innovazione, Università del Salento , Via Monteroni, I-73100 Lecce, Italy
| | - Paola Prete
- Istituto per la Microelettronica e Microsistemi , Consiglio Nazionale delle Ricerche (CNR), Via Monteroni, I-73100 Lecce, Italy
| | - Vladimir G Dubrovskii
- St. Petersburg Academic University , Khlopina 8/3, 194021 St. Petersburg, Russia
- Ioffe Physical Technical Institute RAS , Politekhnicheskaya 26, 194021 St. Petersburg, Russia
- ITMO University , Kronverkskiy pr. 49, 197101 St. Petersburg, Russia
| | - Yury Berdnikov
- St. Petersburg Academic University , Khlopina 8/3, 194021 St. Petersburg, Russia
- ITMO University , Kronverkskiy pr. 49, 197101 St. Petersburg, Russia
| | - Nico Lovergine
- Dipartimento di Ingegneria dell'Innovazione, Università del Salento , Via Monteroni, I-73100 Lecce, Italy
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16
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Catalyst shape engineering for anisotropic cross-sectioned nanowire growth. Sci Rep 2017; 7:40891. [PMID: 28106088 PMCID: PMC5247733 DOI: 10.1038/srep40891] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/04/2016] [Accepted: 12/12/2016] [Indexed: 01/11/2023] Open
Abstract
The ability to engineer material properties at the nanoscale is a crucial prerequisite for nanotechnology. Hereunder, we suggest and demonstrate a novel approach to realize non-hemispherically shaped nanowire catalysts, subsequently used to grow InP nanowires with a cross section anisotropy ratio of up to 1:1.8. Gold was deposited inside high aspect ratio nanotrenches in a 5 nm thick SiNx selective area mask; inside the growth chamber, upon heating to 455 °C, the thin gold stripes agglomerated, resulting in an ellipsoidal dome (hemiellipsoid). The initial shape of the catalyst was preserved during growth to realize asymmetrically cross-sectioned nanowires. Moreover, the crystalline nature of the nanowire side facets was found to depend on the nano-trench orientation atop the substrate, resulting in hexagonal or octagonal cross-sections when the nano-trenches are aligned or misaligned with the [1̄10] orientation atop a [111]B substrate. These results establish the role of catalyst shape as a unique tool to engineer nanowire growth, potentially allowing further control over its physical properties.
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Kelrich A, Dubrovskii VG, Calahorra Y, Cohen S, Ritter D. Control of morphology and crystal purity of InP nanowires by variation of phosphine flux during selective area MOMBE. NANOTECHNOLOGY 2015; 26:085303. [PMID: 25648852 DOI: 10.1088/0957-4484/26/8/085303] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We present experimental results showing how the growth rate, morphology and crystal structure of Au-catalyzed InP nanowires (NWs) fabricated by selective area metal organic molecular beam epitaxy can be tuned by the growth parameters: temperature and phosphine flux. The InP NWs with 20-65 nm diameters are grown at temperatures of 420 and 480 °C with the PH3 flow varying from 1 to 9 sccm. The NW tapering is suppressed at a higher temperature, while pure wurtzite crystal structure is preferred at higher phosphine flows. Therefore, by combining high temperature and high phosphine flux, we are able to fabricate non-tapered and stacking fault-free InP NWs with the quality that other methods rarely achieve. We also develop a model for NW growth and crystal structure which explains fairly well the observed experimental tendencies.
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Affiliation(s)
- A Kelrich
- Electrical Engineering Faculty, Technion-Israel Institute of Technology, Haifa 32000, Israel
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Abstract
Vertically oriented and ordered GaAs nanowire arrays have been grown by the self-assisted mechanism using substrates prepared with nano-patterned oxide templates. Patterned Ga-assisted GaAs nanowire growth on (111) silicon by molecular beam epitaxy showed that the axial and radial growth rates increased with increasing interhole spacing. A model is described which accounts for the correlation of the final length and diameter with pattern pitch. The model considers that growth material is supplied by a secondary flux of both gallium and arsenic adatoms desorbing from the oxide surface between the nanowires which subsequently impinge on the liquid droplet and nanowire sidewalls. We show that shading of the incident and scattered flux by neighboring nanowires in the array can strongly affect the axial and radial growth rates, leading to significant differences in final nanowire morphologies.
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