Materials and possible mechanisms of extremely large magnetoresistance: a review

Extremely large magnetoresistance in twisted intertwined graphene spirals

Extremely large magnetoresistance (XMR) is highly applicable in spintronic devices such as magnetic sensors, magnetic memory, and hard drives. Typically, XMR is found in Weyl semimetals characterized by perfect electron-hole symmetry or exceptionally high electric conductivity and mobility. Our study explores this phenomenon in a recently developed graphene moiré system, which demonstrates XMR owing to its topological structure and high-quality crystal formation. We investigate the electronic properties of three-dimensional intertwined twisted graphene spirals (TGS), manipulating the screw dislocation axis to achieve a rotation angle of 7.3°. Notably, at 14 T and 2 K, the magnetoresistance of these structures reaches 1.7 × 107%, accompanied by a metal-insulator transition as the temperature increases. This transition becomes noticeable when the magnetic field exceeds a minimal threshold of approximately 0.1 T. These observations suggest the possible existence of complex, correlated states within the partially filled three-dimensional Landau levels of the 3D TGS system. Our findings open up possibilities for achieving XMR by engineering the topological structure of 2D layered moiré systems.

Three-dimensional hidden phase probed by in-plane magnetotransport in kagome metal CsV3Sb5 thin flakes

Transition metal compounds with kagome structure have been found to exhibit a variety of exotic structural, electronic, and magnetic orders. These orders are competing with energies very close to each other, resulting in complex phase transitions. Some of the phases are easily observable, such as the charge density wave (CDW) and the superconducting phase, while others are more challenging to identify and characterize. Here we present magneto-transport evidence of a new phase below ~ 35 K in the kagome topological metal CsV3Sb5 (CVS) thin flakes between the CDW and the superconducting transition temperatures. This phase is characterized by six-fold rotational symmetry in the in-plane magnetoresistance (MR) and is connected to the orbital current order in CVS. Furthermore, the phase is characterized by a large in-plane negative magnetoresistance, which suggests the existence of a three-dimensional, magnetic field-tunable orbital current ordered phase. Our results highlight the potential of magneto-transport to reveal the interactions between exotic quantum states of matter and to uncover the symmetry of such hidden phases.

Extreme magnetoresistance at high-mobility oxide heterointerfaces with dynamic defect tunability

Magnetic field-induced changes in the electrical resistance of materials reveal insights into the fundamental properties governing their electronic and magnetic behavior. Various classes of magnetoresistance have been realized, including giant, colossal, and extraordinary magnetoresistance, each with distinct physical origins. In recent years, extreme magnetoresistance (XMR) has been observed in topological and non-topological materials displaying a non-saturating magnetoresistance reaching 103-108% in magnetic fields up to 60 T. XMR is often intimately linked to a gapless band structure with steep bands and charge compensation. Here, we show that a linear XMR of 80,000% at 15 T and 2 K emerges at the high-mobility interface between the large band-gap oxides γ-Al2O3 and SrTiO3. Despite the chemically and electronically very dissimilar environment, the temperature/field phase diagrams of γ-Al2O3/SrTiO3 bear a striking resemblance to XMR semimetals. By comparing magnetotransport, microscopic current imaging, and momentum-resolved band structures, we conclude that the XMR in γ-Al2O3/SrTiO3 is not strongly linked to the band structure, but arises from weak disorder enforcing a squeezed guiding center motion of electrons. We also present a dynamic XMR self-enhancement through an autonomous redistribution of quasi-mobile oxygen vacancies. Our findings shed new light on XMR and introduce tunability using dynamic defect engineering.

Long-distance spin communication via ambipolar conductor with electron-hole spin exchange interaction

Spin accumulation in a nonmagnetic (N) metal embedded between two ferromagnetic metals is still crucial in current spintronics because long-distance spin communication via the N metal can make all-spin logic (ASL) devices feasible. Graphene is almost the only N-region material suitable for ASL devices because its low intrinsic spin-orbit coupling results in a spin diffusion length,ℓN, of over 30µm at room temperature, but long-distance spin communication beyondℓNremains difficult. The present study proposes a way to remove the restriction caused byℓN. In our proposal, an ambipolar conductor, in which electron and hole contribute to electronic conduction and interact with each other, is used for the N-region in a double-heterojunction magnetic structure. When the electron-hole interaction is accompanied by spin exchange, long-distance spin communication characteristic is predicted. Approximately 70 types of ambipolar conductors, including elemental metals and metal alloys, are available. Hence, this material variation may open a new spintronics field, ambipolar spintronics, which may realize operation mechanisms that cannot be achieved using conventional single-band metals. Finally, we present a comprehensive argument on the interface-mediated coupling mechanism between spins and charges, which is the basis of the generation of the spin-coupled interface voltage.

Colossal magnetoresistance in the multiple wave vector charge density wave regime of an antiferromagnetic Dirac semimetal

Colossal negative magnetoresistance is a well-known phenomenon, notably observed in hole-doped ferromagnetic manganites. It remains a major research topic due to its potential in technological applications. In contrast, topological semimetals show large but positive magnetoresistance, originated from the high-mobility charge carriers. Here, we show that in the highly electron-doped region, the Dirac semimetal CeSbTe demonstrates similar properties as the manganites. CeSb0.11Te1.90 hosts multiple charge density wave modulation vectors and has a complex magnetic phase diagram. We confirm that this compound is an antiferromagnetic Dirac semimetal. Despite having a metallic Fermi surface, the electronic transport properties are semiconductor-like and deviate from known theoretical models. An external magnetic field induces a semiconductor metal-like transition, which results in a colossal negative magnetoresistance. Moreover, signatures of the coupling between the charge density wave and a spin modulation are observed in resistivity. This spin modulation also produces a giant anomalous Hall response.

Semimetallic, Half-Metallic, Semiconducting, and Metallic States in Gd-Sb Compounds

The electronic and band structures of the Gd- and Sb-based intermetallic materials have been explored using the theoretical ab initio approach, accounting for strong electron correlations of the Gd-4f electrons. Some of these compounds are being actively investigated because of topological features in these quantum materials. Five compounds were investigated theoretically in this work to demonstrate the variety of electronic properties in the Gd-Sb-based family: GdSb, GdNiSb, Gd₄Sb₃, GdSbS₂O, and GdSb₂. The GdSb compound is a semimetal with the topological nonsymmetric electron pocket along the high-symmetry points Γ-X-W, and hole pockets along the L-Γ-X path. Our calculations show that the addition of nickel to the system results in the energy gap, and we obtained a semiconductor with indirect gap of 0.38 eV for the GdNiSb intermetallic compound. However, a quite different electronic structure has been found in the chemical composition Gd₄Sb₃; this compound is a half-metal with the energy gap of 0.67 eV only in the minority spin projection. The molecular GdSbS₂O compound with S and O in it is found to be a semiconductor with a small indirect gap. The GdSb₂ intermetallic compound is found to have a metallic state in the electronic structure; remarkably, the band structure of GdSb₂ has a Dirac-cone-like feature near the Fermi energy between high-symmetry points Г and S, and these two Dirac cones are split by spin-orbit coupling. Thus, studying the electronic and band structure of several reported and new Gd-Sb compounds revealed a variety of the semimetallic, half-metallic, semiconducting, or metallic states, as well topological features in some of them. The latter can lead to outstanding transport and magnetic properties, such as a large magnetoresistance, which makes Gd-Sb-based materials very promising for applications.

Paramagnetic Sensors for the Determination of Oxygen Concentration in Gas Mixtures

One of the most important methods of measuring the concentration of gaseous oxygen uses its paramagnetic properties, thanks to which oxygen molecules are drawn into the area of a strong magnetic field. This Review presents the current state of knowledge, achievements, and development prospects in the field of magnetic oxygen sensors using this phenomenon. We present the theoretical basis of the physical phenomena used in the paramagnetic oxygen sensors. The principles of operation of individual types of paramagnetic oxygen sensors, including the well-established and widely used magnetoacoustic and magnetopneumatic devices as well as the Pauling cells, are also described. In addition, this Review presents the existing and conceptual innovative sensors known mainly from the scientific and patent literature, including refractometric, interferometric, and ultrasonic sensors. This Review also discusses the advantages and limitations of individual devices, indicating the potential areas of their application.

Bending Modulated Ultralarge Magnetoresistance in Flexible La0.67Ba0.33MnO3 Thin Film Based Device

Magnetoresistance based information devices have attracted much attention due to the ability to utilize spins as information carriers. To promote the magnetoresistance-based devices, ultrahigh magnetoresistance ratios are highly desirable for magnetic sensing, memory, and artificial intelligent devices, etc. However, today the magnetoresistance devices are facing the challenge of limited magnetoresistance ratio, low work temperature, or high magnetic field, which calls for proper theories and mechanisms. To address it, we first introduce the flexible bending-controlled magnetoresistance device based on the La_0.67Ba_0.33MnO₃ film. Due to the anisotropic resistance of the La_0.67Ba_0.33MnO₃ film and the nonlinear amplification effect of the Zener diode, the device has exhibited strong magnetoresistive performance (∼8725% at 1 T, 300 K). Combining the assist from mechanical bending and diode, high magnetic field sensitivity with large magnetoresistance ratio (∼1.7 × 10⁴% at 1 T, 300 K) and low work current (∼0.15 mA) is simultaneously achieved at room temperature, which is over 10⁴ times larger than that of the planar La_0.67Ba_0.33MnO₃ film. Based on the above results, we propose one but not the only possible application as tunable multistage switch. Our findings may pave a strategy to develop flexible diode-enhanced magnetoresistance device with ultrahigh magnetoresistance ratios and bending tunable performances.