Role of metal d states in II-VI semiconductors

Long-Range Anion Correlations Mediating Dynamic Anharmonicity and Contributing to Glassy Thermal Conductivity in Well-Ordered K2Ag4Se3

Herein an extremely low (0.32‒0.25 Wm-1K-1) and glassy temperature-dependence (300-600 K) of lattice thermal conductivity (κlat) in a monoclinic K2Ag4Se3 is reported. It is found that the effective carrier delocalization, contributed by the perfect p-d* hybridization paradigm, can efficiently facilitate the spatial transfer of electron cloud perturbations induced by the anisotropic thermal vibrations of Ag4 atoms, thereby favoring long-range Se‒Se correlations. The localized rattling-like vibration of Ag4 atoms induce short phonon lifetimes, large scattering phase space, and then a low particle-like propagation. While the correlated interactions mediated competitive expressions between bubble diagrams and loop diagrams can suppress the generation of wavelike phonons from off-diagonal coupling. Ultimately, the AgSe3 structural units can enable the dual confinement of both the particle-like propagation of phonons and wavelike tunneling of coherence. The study highlights that the correlated AgSe3 coordination units can simultaneously target particle-like and wavelike phonons and then reduce their contribution to the κlat by mediating long-range transfer of charge polarization. These fundamental advances will advance the design of crystalline materials with tailored thermal properties.

Thermodynamic, electronic, and optical properties of ultra-wide bandgap zirconium-doped tin dioxide from a DFT perspective

The effects of zirconium doping on the thermodynamic, electronic, and optical properties of tin dioxide are investigated by using density functional theory calculations combined with the cluster expansion method. In the whole composition range, the formation enthalpies of all structures are positive, indicating that SnO2-ZrO2 is an immiscible system and the ZrSnO2 alloy has a tendency of phase separation at low temperature. The x-T phase diagram of ZrSnO2 ternary alloy shows that the critical temperature is 979 K, which means that when the growth temperature of ZrSnO2 crystal is higher than the critical temperature, it is possible to realize the full-component solid solution. The bandgaps of ZrxSn1-xO2 alloys (0 ≤ x ≤ 1) are direct and increase as the Zr composition increases. Zr doping can tune the bandgap of SnO2 from the ultraviolet-B region to the deep ultraviolet region, and has a strong optical response to deep ultraviolet light. The projected density of states and band offsets clearly reveal the reason for the increase of bandgap, which provides useful information to design relevant optoelectronic devices such as quantum wells and solar-blind deep ultraviolet photodetectors.

Chemical Bonding Tuned Lattice Anharmonicity Leads to a High Thermoelectric Performance in Cubic AgSnSbTe3

Comprehension of chemical bonding and its intertwined relation with charge carriers and heat propagation through a crystal lattice is imperative to design compounds for thermoelectric energy conversion. Here, we report the synthesis of large single crystal of new p-type cubic AgSnSbTe3 which shows an innately ultra-low lattice thermal conductivity (κlat ) of 0.47-0.27 Wm-1  K-1 and a high electrical conductivity (1238 - 800 S cm-1 ) in the temperature range 294-723 K. We investigated the origin of the low κlat by analysing the nature of the chemical bonding and its crystal structure. The interaction between Sn(5 s)/Ag(4d) and Te(5p) orbitals was found to generate antibonding states just below the Fermi level in the electronic band structure, resulting in a softening of the lattice in AgSnSbTe3 . Furthermore, the compound exhibits metavalent bonding which provides highly polarizable bonds with a strong lattice anharmonicity while maintaining the superior electrical conductivity. The electronic band structure exhibits nearly degenerate valence-band maxima that help to achieve a high Seebeck coefficient throughout the measured temperature range and, as a result, the maximum thermoelectric figure of merit reaches to ≈1.2 at 661 K in pristine single crystal of AgSnSbTe3 .

Strong Antibonding I (p)-Cu (d) States Lead to Intrinsically Low Thermal Conductivity in CuBiI4

Chemical bonding present in crystalline solids has a significant impact on how heat moves through a lattice, and with the right chemical tuning, one can achieve extremely low thermal conductivity. The desire for intrinsically low lattice thermal conductivity (κ_lat) has gained widespread attention in thermoelectrics, in refractories, and nowadays in photovoltaics and optoelectronics. Here we have synthesized a high-quality crystalline ingot of cubic metal halide CuBiI₄ and explored its chemical bonding and thermal transport properties. It exhibits an intrinsically ultralow κ_lat of ∼0.34-0.28 W m^-1 K^-1 in the temperature range 4-423 K with an Umklapp crystalline peak of 1.82 W m^-1 K^-1 at 20 K, which is surprisingly lower than other copper-based halide or chalcogenide materials. The crystal orbital Hamilton population analysis shows that antibonding states generated just below the Fermi level (E_f), which arise from robust copper 3d and iodine 5p interactions, cause copper-iodide bond weakening, which leads to reduction of the elastic moduli and softens the lattice, finally to produce extremely low κ_lat in CuBiI₄. The chemical bonding hierarchy with mixed covalent and ionic interactions present in the complex crystal structure generates significant lattice anharmonicity and a low participation ratio in low-lying optical phonon modes originating mostly from localized copper-iodide bond vibrations. We have obtained experimental evidence of these low-lying modes by low-temperature specific heat capacity measurement as well as Raman spectroscopy. The presence of strong p-d antibonding interactions between copper and iodine leads to anharmonic soft crystal lattice which gives rise to low-energy localized optical phonon bands, suppressing the heat-carrying acoustic phonons to steer intrinsically ultralow κ_lat in CuBiI₄.

Origin of Structural Anomaly in Cuprous Halides

Cuprous halides (CuX; X = Cl, Br, or I) have been extensively investigated in the literature, but many of their fundamental properties are still not very well understood. For example, debate about their crystal stability, i.e., whether the ground-state structures of CuX are zinc-blende, still exists. By performing rigorous first-principles calculations for CuX using an accurate hybrid functional, we unambiguously demonstrate that CuX are indeed stable in the zinc-blende structure, but their accurate description requires careful treatment of the exchange interaction. Previous calculations based on local or semilocal density functionals underestimated the important contributions from exchange interactions and thus underestimated the energy separation between the unoccupied 4s and occupied 3d orbitals in Cu, resulting in an overestimation of the s-d coupling and the energy reduction of distorted CuX. Our study clarifies a long-standing and highly debated issue with regard to ground-state structures of CuX and advances the physics of phase stability and the importance of s-d coupling in semiconductors.

Neural network-based pseudopotential: development of a transferable local pseudopotential

Transferable local pseudopotentials (LPPs) are essential for fast quantum simulations of materials. However, various types of LPPs suffer from low transferability, especially since they do not consider the norm-conserving condition. Here we propose a novel approach based on a deep neural network to produce transferable LPPs. We introduced a generalized Kerker method expressed with the deep neural network to represent the norm-conserving pseudo-wavefunctions. Its unique feature is that all necessary conditions of pseudopotentials can be explicitly considered in terms of a loss function. Then, it can be minimized using the back-propagation technique just with single point all-electron atom data. To assess the transferability and accuracy of the neural network-based LPPs (NNLPs), we carried out density functional theory calculations for the s- and p-block elements of the second to the fourth periods. The NNLPs outperformed other types of LPPs in both atomic and bulk calculations for most elements. In particular, they showed good transferability by predicting various properties of bulk systems including binary alloys with higher accuracy than LPPs tailored to bulk data.

Koopmans Spectral Functionals in Periodic Boundary Conditions

Koopmans spectral functionals aim to describe simultaneously ground-state properties and charged excitations of atoms, molecules, nanostructures, and periodic crystals. This is achieved by augmenting standard density functionals with simple but physically motivated orbital-density-dependent corrections. These corrections act on a set of localized orbitals that, in periodic systems, resemble maximally localized Wannier functions. At variance with the original, direct supercell implementation (Phys. Rev. X 2018, 8, 021051), we discuss here (i) the complex but efficient formalism required for a periodic boundary code using explicit Brillouin zone sampling and (ii) the calculation of the screened Koopmans corrections with density functional perturbation theory. In addition to delivering improved scaling with system size, the present development makes the calculation of band structures with Koopmans functionals straightforward. The implementation in the open-source Quantum ESPRESSO distribution and the application to prototypical insulating and semiconducting systems are presented and discussed.

The Combination of Structure Prediction and Experiment for the Exploration of Alkali-Earth Metal-Contained Chalcopyrite-Like IR Nonlinear Optical Material

Design and fabrication of new infrared (IR) nonlinear optical (NLO) materials with balanced properties are urgently needed since commercial chalcopyrite-like (CL) NLO crystals are suffering from their intrinsic drawbacks. Herein, the first defect-CL (DCL) alkali-earth metal (AEM) selenide IR NLO material, DCL-MgGa2 Se4 , has been rationally designed and fabricated by a structure prediction and experiment combined strategy. The introduction of AEM tetrahedral unit MgSe4 effectively widens the band gap of DCL compounds. The title compound exhibits a wide band gap of 2.96 eV, resulting in a high laser induced damage threshold (LIDT) of ≈3.0 × AgGaS2 (AGS). Furthermore, the compound shows a suitable second harmonic generation (SHG) response (≈0.9 × AGS) with a type-I phase-matching (PM) behavior and a wide IR transparent range. The results indicate that DCL-MgGa2 Se4 is a promising mid-to-far IR NLO material and give some insights into the design of new CL compound with outstanding IR NLO properties based on the AEM tetrahedra and the structure predication and experiment combined strategy.

Structural and thermal properties of ultralow thermal conductivity Ba3Cu2Sn3Se10

The thermal properties of Ba₃Cu₂Sn₃Se₁₀ were investigated by measurement of the thermal conductivity and heat capacity. The chemical bonding in this diamagnetic material was investigated using structural data from Rietveld refinement and calculated electron localization. This quaternary chalcogenide is monoclinic (P2₁/c), has a large unit cell with 72 atoms in the primitive cell, and a high local coordination environment. The Debye temperature (162 K) and average speed of sound (1666 m s^-1) are relatively low with a very small electronic contribution to the heat capacity. Ultralow thermal conductivity (0.46 W m^-1 K^-1 at room temperature) is attributed to the relatively weak chemical bonding and intrinsic anharmonicity, in addition to a large unit cell. This work is part of the continuing effort to explore quaternary chalcogenides with intrinsically low thermal conductivity and identify the features that result in a low thermal conductivity.

Challenges of modeling nanostructured materials for photocatalytic water splitting

Understanding the water splitting mechanism in photocatalysis is a rewarding goal as it will allow producing clean fuel for a sustainable life in the future. However, identifying the photocatalytic mechanisms by modeling photoactive nanoparticles requires sophisticated computational techniques based on multiscale modeling. In this review, we will survey the strengths and drawbacks of currently available theoretical methods at different length and accuracy scales. Understanding the surface-active site through Density Functional Theory (DFT) using new, more accurate exchange-correlation functionals plays a key role for surface engineering. Larger scale dynamics of the catalyst/electrolyte interface can be treated with Molecular Dynamics albeit there is a need for more generalizations of force fields. Monte Carlo and Continuum Modeling techniques are so far not the prominent path for modeling water splitting but interest is growing due to the lower computational cost and the feasibility to compare the modeling outcome directly to experimental data. The future challenges in modeling complex nano-photocatalysts involve combining different methods in a hierarchical way so that resources are spent wisely at each length scale, as well as accounting for excited states chemistry that is important for photocatalysis, a path that will bring devices closer to the theoretical limit of photocatalytic efficiency.

Development and Functionalization of Visible-Light-Driven Water-Splitting Photocatalysts

With global warming and the depletion of fossil resources, our fossil fuel-dependent society is expected to shift to one that instead uses hydrogen (H2) as a clean and renewable energy. To realize this, the photocatalytic water-splitting reaction, which produces H2 from water and solar energy through photocatalysis, has attracted much attention. However, for practical use, the functionality of water-splitting photocatalysts must be further improved to efficiently absorb visible (Vis) light, which accounts for the majority of sunlight. Considering the mechanism of water-splitting photocatalysis, researchers in the various fields must be employed in this type of study to achieve this. However, for researchers in fields other than catalytic chemistry, ceramic (semiconductor) materials chemistry, and electrochemistry to participate in this field, new reviews that summarize previous reports on water-splitting photocatalysis seem to be needed. Therefore, in this review, we summarize recent studies on the development and functionalization of Vis-light-driven water-splitting photocatalysts. Through this summary, we aim to share current technology and future challenges with readers in the various fields and help expedite the practical application of Vis-light-driven water-splitting photocatalysts.

Zinc Germanium Nitrides and Oxide Nitrides: The Influence of Oxygen on Electronic and Structural Properties

Zinc containing ternary nitrides, in particular ZnSnN2 and ZnGeN2, have great potential as earth-abundant and low toxic light-absorbing materials. The incorporation of oxygen in this system – may it be...

Ultralow Thermal Conductivity, Multiband Electronic Structure and High Thermoelectric Figure of Merit in TlCuSe

The entanglement of lattice thermal conductivity, electrical conductivity, and Seebeck coefficient complicates the process of optimizing thermoelectric performance in most thermoelectric materials. Semiconductors with ultralow lattice thermal conductivities and high power factors at the same time are scarce but fundamentally interesting and practically important for energy conversion. Herein, an intrinsic p-type semiconductor TlCuSe that has an intrinsically ultralow thermal conductivity (0.25 W m^-1 K^-1 ), a high power factor (11.6 µW cm^-1 K^-2 ), and a high figure of merit, ZT (1.9) at 643 K is described. The weak chemical bonds, originating from the filled antibonding orbitals p-d* within the edge-sharing CuSe₄ tetrahedra and long TlSe bonds in the PbClF-type structure, in conjunction with the large atomic mass of Tl lead to an ultralow sound velocity. Strong anharmonicity, coming from Tl⁺ lone-pair electrons, boosts phonon-phonon scattering rates and further suppresses lattice thermal conductivity. The multiband character of the valence band structure contributing to power factor enhancement benefits from the lone-pair electrons of Tl⁺ as well, which modify the orbital character of the valence bands, and pushes the valence band maximum off the Γ-point, increasing the band degeneracy. The results provide new insight on the rational design of thermoelectric materials.

Pressure-induced ferroelectric-like transition creates a polar metal in defect antiperovskites Hg3Te2X2 (X = Cl, Br)

Ferroelectricity is typically suppressed under hydrostatic compression because the short-range repulsions, which favor the nonpolar phase, increase more rapidly than the long-range interactions, which prefer the ferroelectric phase. Here, based on single-crystal X-ray diffraction and density-functional theory, we provide evidence of a ferroelectric-like transition from phase I2₁3 to R3 induced by pressure in two isostructural defect antiperovskites Hg₃Te₂Cl₂ (15.5 GPa) and Hg₃Te₂Br₂ (17.5 GPa). First-principles calculations show that this transition is attributed to pressure-induced softening of the infrared phonon mode Γ₄, similar to the archetypal ferroelectric material BaTiO₃ at ambient pressure. Additionally, we observe a gradual band-gap closing from ~2.5 eV to metallic-like state of Hg₃Te₂Br₂ with an unexpectedly stable R3 phase even after semiconductor-to-metal transition. This study demonstrates the possibility of emergence of polar metal under pressure in this class of materials and establishes the possibility of pressure-induced ferroelectric-like transition in perovskite-related systems.

Generally, ferroelectricity in ABO₃ perovskites is suppressed by hydrostatic compression, but the evidence for pressure-induced ferroelectricity remains elusive. Here, the authors find a direct ferroelectric-like structural transition induced by pressure in defect antiperovskites.

Tuning radiative lifetimes in semiconductor quantum dots

Photonic devices stand to benefit from the development of chromophores with tunable, precisely controlled spontaneous emission lifetimes. Here, we demonstrate a method to continuously tune the radiative emission lifetimes of a class of chromophores by varying the density of electronic states involved in the emission process. In particular, we examined the peculiar composition-dependent electronic structure of copper doped CdZnSe quantum dots. It is shown that the nature and density of electronic states involved with the emission process is a function of copper inclusion level, providing a very direct handle for controlling the spontaneous lifetimes. The spontaneous emission lifetimes are estimated by examining the ratios of emission lifetimes to absolute quantum yields and also measured directly by ultrafast luminescence upconversion experiments. We find excellent agreement between these classes of experiments. This scheme enables us to tune spontaneous emission lifetimes by three orders of magnitude from ∼15 ns to over ∼7 µs, which is unprecedented in existing lumophores.

Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors

The electronic and optical properties of (In_xGa_1-x)₂O₃ alloys are highly tunable, giving rise to a myriad of applications including transparent conductors, transparent electronics, and solar-blind ultraviolet photodetectors. Here, we investigate these properties for a high quality pulsed laser deposited film which possesses a lateral cation composition gradient (0.01 ≤ x ≤ 0.82) and three crystallographic phases (monoclinic, hexagonal, and bixbyite). The optical gaps over this composition range are determined, and only a weak optical gap bowing is found (b = 0.36 eV). The valence band edge evolution along with the change in the fundamental band gap over the composition gradient enables the surface space-charge properties to be probed. This is an important property when considering metal contact formation and heterojunctions for devices. A transition from surface electron accumulation to depletion occurs at x ∼ 0.35 as the film goes from the bixbyite In₂O₃ phase to the monoclinic β-Ga₂O₃ phase. The electronic structure of the different phases is investigated by using density functional theory calculations and compared to the valence band X-ray photoemission spectra. Finally, the properties of these alloys, such as the n-type dopability of In₂O₃ and use of Ga₂O₃ as a solar-blind UV detector, are understood with respect to other common-cation compound semiconductors in terms of simple chemical trends of the band edge positions and the hydrostatic volume deformation potential.

Band structure regulation in Fe-doped MgZnO by initial magnetic moments

ZnO-based diluted magnetic semiconductors have high prospects in spintronics applications. In this study, the electronic and magnetic properties of Fe-doped MgZnO are studied by density functional theory calculations. The investigations of the band structure, total density of states, and projected density of states revealed a strong correlation between Mg and O atoms in addition to the magnetism and impurity level generated by the Fe atoms. In the spin charge density and band structure of 2.78% Fe-doped MgZnO, Fe atoms always cause paramagnetic coupling with oxygen atoms bonded around them, and when the initial magnetic moments were parallel, the band gap is broadened in the opposite channel. On the contrary, when the initial magnetic moments are anti-parallel, the band gap is narrowed in both the spin-up and spin-down channels. This shows that the initial magnetic moments have a great influence on the band structure, giving another way to tune the gap dynamically.

The optoelectronic and magnetic properties of Fe-doped MgZnO are regulated by the Fe dopant and its initial magnetic moments.

Tailoring Optical Properties of Luminescent Semiconducting Nanocrystals through Hydrostatic, Anisotropic Static, and Dynamic Pressures

Luminescent semiconductor nanocrystals are a fascinating class of materials because of their size-dependent emissions. Numerous past studies have demonstrated that semiconductor nanoparticles with radii smaller than their Bohr radius experience quantum confinement and thus size-dependent emissions. Exerting pressure on these nanoparticles represents an additional, more dynamic, strategy to alter their size and shift their emission. The application of pressure results in the lattices becoming strained and the electronic structure altered. In this Minireview, colloidal semiconductor nanocrystals are first introduced. The effects of uniform hydrostatic pressure on the optical properties of metal halide perovskite (ABX₃ ), II-VI, III-V, and IV-VI semiconductor nanocrystals are then examined. The optical properties of semiconductor nanocrystals under static and dynamic anisotropic pressure are then summarized. Finally, future research directions and applications utilizing the pressure-dependent optical properties of semiconductor nanocrystals are discussed.

Pressure-dependent modifications in the optical and electronic properties of Fe(IO3)3: the role of Fe 3d and I 5p lone–pair electrons

The electronic and transport properties of Fe(IO3)3 have been characterized under compression. A nice correlation of bandgaps of iodates to orbital configuration is proposed giving an explanation for the 2.1 eV bandgap of Fe(IO3)3.

Carbon Sphere Template Derived Hollow Nanostructure for Photocatalysis and Gas Sensing

As a green and preferred technology for energy crisis and environmental issues, continuous research on photocatalysis and gas sensing has come forth at an explosive rate. Thus far, promising synthetic methods have enabled various designs and preparations of semiconductor-based nanostructure which have shown superior activity. This review summarized various synthetic routines toward carbon sphere template derived hollow nanostructures and their successful attempts in synthesize doping, solid solution, heterostructure, and surface modified nanostructures for heterogeneous photocatalysis and gas sensing. Moreover, the challenges and future prospects are briefly discussed. It is eagerly anticipated that this review may broaden the view and in-depth understanding of carbon sphere template derived hollow nanostructures while expected to have further progresses in heterogeneous photocatalysis, gas sensing and other related fields which will make great contributions to their application.

Enhanced and selective photocatalytic reduction of CO2 by H2O over strategically doped Fe and Cr into porous boron carbon nitride

Strategic doping of metals and non-metals into a photocatalyst can help in tuning the band gap and alignment of band structure.

Ge-Modified GaN–ZnO wurtzite solid solutions with high Zn content for efficient photocatalytic H2 evolution from water under visible light illumination

A new intermediate, Zn₂GeO₄, forms during synthesis of Ge-modified GaN–ZnO wurtzite solid solutions and results in high Zn content in the product.

A review of the AI2BIICIVDVI4 family as infrared nonlinear optical materials: the effect of each site on the structure and optical properties

The AI2B^IIC^IVDVI4 family as promising infrared NLO materials is summarized. The influence of each site substitutions on the structures and properties is systematically analyzed.

Realization of rocksalt Zn1−xCdxO thin films with an optical band gap above 3.0 eV by molecular beam epitaxy

We have grown Zn_1−xCd_xO (ZnCdO) thin films by molecular beam epitaxy on α-Al₂O₃ (0001) substrates across the full composition range of 0 ≤ x ≤ 1. A large optical gap of 3.0 eV is obtained in rocksalt-ZnCdO with a low resistivity and high mobility.

Nanocrystalline Ga–Zn Oxynitride Materials: Minimized Defect Density for Improved Photocatalytic Activity?

We present an alternative synthesis strategy for developing nanocrystalline (Ga1−xZnx)(N1−xOx) semiconductors known to be very efficient photoabsorbers. In a first step we produce mixtures of highly crystalline β-Ga2O3 and wurtzite-type ZnO nanoparticles by chemical vapor synthesis. (Ga1−xZnx)(N1−xOx) nanoparticles of wurtzite structure are then formed by reaction of these precursor materials with ammonia. Microstructure as well as composition (zinc loss) changes with nitridation time: band gap energy, crystallite size and crystallinity increase, while defect density decreases with increasing nitridation time. Crystallite growth results in a corresponding decrease in specific surface area. In the UV regime photocatalytic activity for overall water splitting can be monitored for samples both before and after nitridation. We find a significantly lower photocatalytic activity in the nitrided samples, even though the crystallinity is significantly higher and the defect density is significantly lower after nitridation. Both properties should have led to a lower probability for charge carrier recombination, and, consequently, to a higher photocatalytic activity.

Preparation of (Zn1+xGe)(N2Ox) nanoparticles with enhanced NOx decomposition activity under visible light irradiation by nitridation of Zn2GeO4 nanoparticles designed precisely

Quaternary zinc germanium oxynitride (Zn_1+xGe)(N₂O_x), a solid solution between ZnGeN₂ and ZnO with a wurtzite structure, is one of the attractive photocatalysts under visible-light irradiation. In this study, the synthesis of (Zn_1+xGe)(N₂O_x) nanoparticles was achieved by the nitridation of Zn₂GeO₄ nanoparticles designed precisely to enhance their photocatalytic NO_x decomposition activity under both UV and visible light irradiation. The obtained (Zn_1+xGe)(N₂O_x) nanoparticles exhibited a high specific surface area and visible light absorption induced by the narrow band gap of ca. 2.6-2.8 eV, both of which are reasons for the enhancement of photocatalytic activity. The oxide precursors with a nanoparticle morphology were prepared by a facile solvothermal method with various volumes of TEA (triethanolamine) as an additive. The relationships of nitridation time and TEA volume in the solvothermal reaction for the synthesis of the precursor with morphology, specific surface area, and photocatalytic NO_x decomposition activity of the nitrided samples were investigated. The increase of active sites by the high surface area and the enhanced visible-light absorption ability as well as the defect amounts and states can be largely related to the excellent NO_x decomposition activity of (Zn_1+xGe)(N₂O_x).

Understanding the origin of bandgap problem in transition and post-transition metal oxides

Improving electronic structure calculations for practical and technologically important materials has been a never-ending pursue. This is especially true for transition and post-transition metal oxides for which the current first-principles approaches still suffer various drawbacks. Here, we present a hierarchical-hybrid functional approach built on the use of pseudopotentials. The key is to introduce different amounts of exact exchange to core and valence electrons. It allows for treating the delocalization errors of sp and d electrons differently, which have been known to be an important source of error for the band structure. Using wurtzite ZnO as a prototype, we show that the approach is successful in simultaneously reproducing the bandgap and d-band position. Importantly, the same approach, without having to change the hybrid mixing parameters from those of Zn, works reasonably well for other binary 3d transition and post-transition metal oxides across board. Our findings thus point out a new direction of systematically improving the exchange functional in first-principles calculations.

Intrinsically strained noble metal-free oxynitrides for solar photoreduction of CO2

Metal oxynitrides show promising activity for photocatalytic solar water splitting and CO₂ reduction under solar irradiance. Precise control of cation ratios in oxynitrides is an inevitable challenge that needs to be overcome for achieving effective band gap tuning. Here we report the density functional theory-based calculations for the intricate structure-function relationships of Zn-Ga based oxynitrides and correlate the results with the experimental parameters. Crucial material property descriptors such as elemental composition, intrinsic lattice strain, and vacancy defects were exploited during the synthesis to achieve stable oxynitride photocatalysts that demonstrated CO₂ conversion to CO under simulated solar light, without any noble metal impregnation. The highest CO production rate surpassed that of TiO₂ under the same conditions. This work inspires future research on oxynitride materials with tailored optical properties and sustainable photocatalytic activity which enables their large scale applications.

High temperature-mediated rocksalt to wurtzite phase transformation in cadmium oxide nanosheets and its theoretical evidence

Herein, a high temperature-induced phase transformation (PT) in chemically grown CdO thin films is demonstrated, and its corresponding electronic origin further investigated by density functional theory. In particular, the cubic rocksalt to hexagonal wurtzite PT in the CdO thin film annealed at 900 °C was confirmed by X-ray diffraction (XRD), which was consistent with the high-resolution transmission electron microscopy (TEM) results. Moreover, atomic force microscopy and scanning electron microscopy clearly evidenced the morphological evolution via the formation of a nanosheet network in the wurtzite-phase CdO film. The high temperature treatment also led to a significant enhancement in the optical band gap from 2.2 to 3.2 eV, as manifested by UV-visible spectroscopy. The enhanced surface roughness of the nanosheet caused a deviation in the net dipole moment, which may break the polarizable bonds and help in reducing the average dielectric constant, resulting in a band gap opening for the transformed phase. Furthermore, X-ray absorption spectroscopy at the oxygen k-edge revealed a notable shift in the inflection point of the absorption edge, while the X-ray photoelectron spectroscopy (XPS) Cd 3d and O 1s spectra suggested a gradual reduction in the CdO2 phase with an increase in annealing temperature. In addition, different complementary techniques including Rutherford backscattering and Raman spectroscopy were exploited to understand the aforementioned PT and its structural correlation. Finally, molecular dynamics simulation together with density functional theory calculation suggested that the symmetry modification at the Brillouin zone boundary provides a succinct signature for the PT in the CdO thin film.

Bandgap engineering of PbTe ultra-thin layers by surface passivations

We calculate the electronic structures of the PbTe (1 1 1) ultra-thin films by performing the first-principles calculations. The PbTe (1 1 1) ultra-thin films possess direct or indirect band gaps depending sensitively on surface passivations with hydrogen or halogen atoms, and the band gaps depend sensitively on the passivation elements. The bandgaps of PbTe (1 1 1) ultra-thin films with hydrogen passivations can be tuned from 15 meV to 65 meV by applying external strains, making PbTe ultra-thin films promising candidates for optoelectronic device applications in terahertz regime.

Design Principles of p-Type Transparent Conductive Materials

Transparent conductive materials (TCMs) has always been playing a significant role in electronic and photovoltaic area, due to its prominent optical and electronic properties. To render those transparent materials highly conductive, efficient n- and p- type doping is critically needed to obtain high concentration of free electron and hole carriers. Despite extensive research over the past five decades, high-quality p-type doping of wide-band-gap transparent materials remains a challenge. Here, we summarize four proposed design principles to enhance the p-type conductivity of these wide band gap materials, including (i) reducing the formation energy of the acceptors to enhance the dopant concentration; (ii) lowering the ionization energy and, hence, increasing the ionization of the acceptors to increase the concentration of the free holes; (iii) increasing the VBM of the host material to approaching the pinned Fermi level; and (iv) suppressing the compensating donors to shifting the pinning Fermi level toward the VBM. For each mechanism, we discuss in detail its underlying physics and provided some examples to illustrate the design principles. From this review, one could learn the doping principles and have a strategic mind when designing other p-type materials.

Hybrid-functional calculations of electronic structure and phase stability of MO (M = Zn, Cd, Be, Mg, Ca, Sr, Ba) and related ternary alloy MxZn1−xO

Using the hybrid exchange–correlation functional within the density-functional theory, we have systematically investigated the structural and electronic properties of MO (M = Be, Mg, Ca, Sr, Ba, Zn, Cd) in binary rock salt (B1), zinc-blende (B3) and wurtzite (B4) phases, including the structural parameters, bulk moduli, band gaps and deformation potentials. Our results agree well with the experimental data and other theoretical results, and give a better understanding of the relationship between the geometric and electronic structure. After calculating the band alignment, we find that in both the B1 and B3 structures, the valence band maximum (VBM) has an obvious decrease from BeO to MgO to CaO, then it goes up from SrO to BaO to ZnO to CdO. Moreover, the properties of the ternary alloys M_xZn_1−xO were studied through the application of the special quasi-random structure method. The critical value of the ZnO composition for the transition from the B3 structure to the B1 structure gradually increases from (Ca, Zn)O to (Mg, Zn)O to (Sr, Zn)O to (Ba, Zn)O to (Cd, Zn)O, indicating that (Ca, Zn)O can exist in the B3 structure with the lowest ZnO composition. These results provide a good guideline for the accessible phase space in these alloy systems.

M_xZn_1−xO ternary alloy formations were explored through the application of the SQS method and hybrid density functional calculations.

Adjustable optical nonlinearity in d10 cations containing chalcogenides via dp hybridization interaction

The role of d¹⁰-cations on band gap and nonlinearity in Cd/Hg-containing metal chalcogenides was investigated using DFT.

Polarity Control within One Monolayer at ZnO/GaN Heterointerface: (0001) Plane Inversion Domain Boundary

In semiconductor heterojunction, polarity critically governs the physical properties, with an impact on electronic or optoelectronic devices through the presence of pyroelectric and piezoelectric fields at the active heteropolar interface. In the present work, the abrupt O-polar ZnO/Ga-polar GaN heterointerface was successfully achieved by using high O/Zn ratio flux during the ZnO nucleation growth. Atomic-resolution high-angle annular dark-field and bright-field transmission electron microscopy observation revealed that this polarity inversion confines within one monolayer by forming the (0001) plane inversion domain boundary (IDB) at the ZnO/GaN heterointerface. Through theoretical calculation and topology analysis, the geometry of this IDB was determined to possess an octahedral Ga atomic layer in the interface, with one O/N layer symmetrically bonded at the tetrahedral site. The computed electronic structure of all considered IDBs revealed a metallic character at the heterointerface. More interestingly, the presence of two-dimensional (2D) hole gas (2DHG) or 2D electron gas (2DEG) is uncovered by investigating the chemical bonding and charge transfer at the heterointerface. This work not only clarifies the polarity control and interfacial configuration of the O-polar ZnO/Ga-polar GaN heterojunction but, more importantly, also gives insight into their further application on heterojunction field-effect transistors as well as hybrid ZnO/GaN optoelectronic devices. Moreover, such polarity control at the monolayer scale might have practical implications for heterojunction devices based on other polar semiconductors.

Elimination of S Vacancy as the Cause for the n-Type Behavior of MoS2 from the First-Principles Perspective

Molybdenum disulfide (2H-MoS₂) based low-dimensional nanostructure materials have great potential for applications in electronic and optoelectronic devices. However, some of the properties such as the origin of the native n-type electrical conductivity (EC) observed in these materials still remain elusive. Here, the defect properties in the 2H-MoS₂ bulk system are systematically investigated by first-principles calculation to address these issues. We find that the S vacancy V_S with low formation energy cannot be the origin of n-type EC owing to its deep defect levels within the valence band region. All other donor defects such as antisite Mo_S or Mo interstitial Mo_I also have deep levels that can trap electrons leading to depressed EC. S_Mo and S_I could be the origin of the p-type EC in 2H-MoS₂, but the concentrations are expected to be rather low due to their high formation energies and can only be enhanced under S-rich/Mo-poor conditions. These results provide the underlying insights on the defect properties 2H-MoS₂ and explain well the experimental observations.

Optical Signatures of Impurity-Impurity Interactions in Copper Containing II-VI Alloy Semiconductors

We study the optical properties of copper containing II-VI alloy quantum dots (Cu_xZn_yCd_1-x-ySe). Copper mole fractions within the host are varied from 0.001 to 0.35. No impurity phases are observed over this composition range, and the formation of secondary phases of copper selenide are observed only at x_Cu > 0.45. The optical absorption and emission spectra of these materials are observed to be a strong function of x_Cu, and provide information regarding composition induced impurity-impurity interactions. In particular, the integrated cross section of optical absorption per copper atom changes sharply (from 1 × 10 ^-2 nm³ to 4 × 10 ^-2 nm³) at x_Cu = 0.12, suggesting a composition induced change in local electronic structure. These materials may serve as model systems to understand the electronic structure of I-III-VI₂ semiconductor compounds.

Correlation between the structural change and the electrical transport properties of indium nitride under high pressure

We report on the intriguing structural and electrical transport properties of compressed InN. Pronounced anomalies of the resistivity, Hall coefficient, electron concentration, and mobility are observed at ∼11.5 GPa, accompanied by a wurtzite-rocksalt structural transition confirmed using high-pressure XRD measurements and first-principles calculations. The pressure-tuned electrical properties of wurtzite and rocksalt InN are also studied, respectively. Particularly, compression pressure significantly decreases the electron concentration of rocksalt InN by two orders of magnitude and increases the mobility by ten fold. The obvious variations in electrical parameters can be rationalized by our band structure simulations, which reveal a direct-indirect energy crossover at 10 GPa, followed by the rapidly increasing patterns of the energy gap with a pressure coefficient of 33 meV GPa^-1. Moreover the electron effective mass and energy gap are found to well satisfy with the k·p model. Definite correlation between the structural change and the electrical transport properties should shed a new light on building InN-based applications in the future.

Temperature-dependent optoelectronic properties of quasi-2D colloidal cadmium selenide nanoplatelets

Colloidal cadmium selenide (CdSe) nanoplatelets (NPLs) are a recently developed class of efficient luminescent nanomaterials suitable for optoelectronic device applications. A change in temperature greatly affects their electronic bandstructure and luminescence properties. It is important to understand how and why the characteristics of NPLs are influenced, particularly at elevated temperatures, where both reversible and irreversible quenching processes come into the picture. Here we present a study of the effect of elevated temperatures on the characteristics of colloidal CdSe NPLs. We used an effective-mass envelope function theory based 8-band k·p model and density-matrix theory considering exciton-phonon interaction. We observed the photoluminescence (PL) spectra at various temperatures for their photon emission energy, PL linewidth and intensity by considering the exciton-phonon interaction with both acoustic and optical phonons using Bose-Einstein statistical factors. With a rise in temperature we observed a fall in the transition energy (emission redshift), matrix element, Fermi factor and quasi Fermi separation, with a reduction in intraband state gaps and increased interband coupling. Also, there was a fall in the PL intensity, along with spectral broadening due to an intraband scattering effect. The predicted transition energy values and simulated PL spectra at varying temperatures exhibit appreciable consistency with the experimental results. Our findings have important implications for the application of NPLs in optoelectronic devices, such as NPL lasers and LEDs, operating much above room temperature.

Adsorption Study of a Water Molecule on Vacancy-Defected Nonpolar CdS Surfaces

A detailed understanding of the water-semiconductor interface is of major importance for elucidating the molecular interactions at the photocatalyst's surface. Here, we studied the effect of vacancy defects on the adsorption of a water molecule on the (101̅0) and (112̅0) CdS surfaces, using spin-polarized density functional theory. We observed that the local spin polarization did not persist for most of the cationic vacancies on the surfaces, unlike in bulk, owing to surface reconstructions caused by displaced S atoms. This result suggests that cationic vacancies on these surfaces may not be the leading cause of the experimentally observed magnetism in CdS nanostructures. The surface vacancies are predominantly nonmagnetic except for one case, where a magnetic cationic vacancy is relatively stable due to constraints posed by the (101̅0) surface geometry. At this particular magnetic defect site, we found a very strong interaction with the H₂O molecule leading to a case of chemisorption, where the local spin polarization vanishes concurrently. At the same defect site, adsorption of an O₂ molecule was also simulated, and the results were found to be consistent with experimental electron paramagnetic resonance findings for powdered CdS. The anion vacancies on these surfaces were always found to be nonmagnetic and did not affect the water adsorption at these surfaces.

Correlations of charge neutrality level with electronic structure and p-d hybridization

The formation of charge neutrality level (CNL) in highly conducting Cadmium oxide (CdO) thin films is demonstarted by the observed variation in the band gap upon annealing and doping. It may be explained by the observation that Tin (Sn) doping breaks the perfect periodicity of CdO cubic crystal structure and creates virtual gap states (ViGS). The level of local CNL resides at the branch point of ViGS, making the energy at which native defect’s character changes from predominantly donor-like below CNL to predominantly acceptor-like above the CNL and a schematic band diagram is developed to substantiate the same. Further investigations using soft x-ray absorption spectroscopy (SXAS) at Oxygen and Cadmium edges show the reduction of Sn⁴⁺ to Sn²⁺. The analysis of the spectral features has revealed an evidence of p-d interaction between O 2p and Cd 4d orbitals that pushes the valence band minima at higher energies which is symmetry forbidden at г point and causing a positive valance band dispersion away from the zone centre in the г ~ L, K direction. Thus, origin of the CNL is attributed to the high density of the Oxygen vacancies as confirmed by the change in the local electronic structure and p-d hybridization of orbitals.

A layered wide-gap oxyhalide semiconductor with an infinite ZnO2 square planar sheet: Sr2ZnO2Cl2

A new layered perovskite zinc oxychloride, Sr₂ZnO₂Cl₂, with a square planar geometry was successfully synthesized using a high pressure method.

Homologous Compounds ZnnIn2O3+n (n = 4, 5, and 7) Containing Laminated Functional Groups as Efficient Photocatalysts for Hydrogen Production

Strong visible light absorption and high charge mobility are desirable properties for an efficient photocatalyst, yet they are hard to be realized simultaneously in a single semiconductor compound. In this work, we demonstrate that these properties coexist in homologous compounds Zn_nIn₂O_3+n (n = 4, 5, and 7) with a peculiar layered structure that combines optical active segment and electrical conductive segment together. Their enhanced visible light absorption originates from tetrahedrally or trigonal-bipyramidally coordinated In atoms in Zn(In)O₄₍₅₎ layers which enable p-d hybridization between In 4d and O 2p orbitals so that valence band minimum (VBM) is uplifted with a reduced band gap. Theoretical calculations reveal their anisotropic features in charge transport and functionality of different constituent segments, i.e., Zn(In)O₄₍₅₎ layers and InO₆ layers as being for charge generation and charge collection, respectively. Efficient photocatalytic hydrogen evolution was observed in these compounds under full range (λ ≥ 250 nm) and visible light irradiation (λ ≥ 420 nm). High apparent quantum efficiency ∼2.79% was achieved for Zn₄In₂O₇ under full range irradiation, which is almost 5-fold higher than their parent oxides ZnO and In₂O₃. Such superior photocatalytic activities of these homologous compounds can be understood as layer-by-layer packing of charge generation/collection functional groups that ensures efficient photocatalytic reactions.