Microstructure and optical properties of free-standing porous silicon films: Size dependence of absorption spectra in Si nanometer-sized crystallites

Clarifying the effects of nanoscale porosity of silicon on the bandgap and alignment: a combined molecular dynamics-density functional tight binding computational study

Porous silicon (pSi) has been studied for its applications in solar cells, in particular in silicon-silicon tandem solar cells. It is commonly believed that porosity leads to an expansion of the bandgap due to nano-confinement. Direct confirmation of this proposition has been elusive, as experimental band edge quantification is subject to uncertainties and effects of impurities, while electronic structure calculations on relevant length scales are still outstanding. Passivation of pSi is another factor affecting the band structure. We present a combined force field-density functional tight binding study of the effects of porosity of silicon on its band structure. We thus perform electron structure-level calculations for the first time on length scales (several nm) that are relevant to real pSi, and consider multiple nanoscale geometries (pores, pillars, and craters) with key geometrical features and sizes of real porous Si. We consider the presence of a bulk-like base with a nanostructured top layer. We show that the bandgap expansion is not correlated with the pore size but with the size of the Si framework. Significant band expansion would require features of silicon (as opposed to pore sizes) to be as small as 1 nm, while the nanosizing of pores does not induce gap expansion. We observe a graded junction-like behavior of the band gap as a function of Si feature sizes as one moves from the bulk-like base to the nanoporous top layer.

Luminescence Fine Structures in Single Lead Halide Perovskite Nanocrystals: Size Dependence of the Exciton-Phonon Coupling

Lead halide perovskite nanocrystals (NCs) have superior photoluminescence (PL) properties, such as high PL quantum yields and wide PL wavelength tunability, for optoelectronic applications. Here, we report the PL spectra of single formamidinium lead halide perovskite FAPbX₃ (X = Br, I) NCs examined by single-dot spectroscopy at low temperature. We found four PL peaks in the low-energy region below the strong exciton PL peak that originate from two longitudinal-optical (LO) phonon replicas of the exciton PL, biexcitons, and charged excitons (trions). The binding energies of the biexcitons and trions become larger as the NCs decrease in size. The LO phonon energies show no size dependence, but the Huang-Rhys factors, which reflect the strength of the exciton-phonon coupling, become larger for smaller NCs. Our findings provide important insights into the exciton properties of perovskite NCs.

Precision micro-milling process: state of the art

Micro-milling is a precision manufacturing process with broad applications across the biomedical, electronics, aerospace, and aeronautical industries owing to its versatility, capability, economy, and efficiency in a wide range of materials. In particular, the micro-milling process is highly suitable for very precise and accurate machining of mold prototypes with high aspect ratios in the microdomain, as well as for rapid micro-texturing and micro-patterning, which will have great importance in the near future in bio-implant manufacturing. This is particularly true for machining of typical difficult-to-machine materials commonly found in both the mold and orthopedic implant industries. However, inherent physical process constraints of machining arise as macro-milling is scaled down to the microdomain. This leads to some physical phenomena during micro-milling such as chip formation, size effect, and process instabilities. These dynamic physical process phenomena are introduced and discussed in detail. It is important to remember that these phenomena have multifactor effects during micro-milling, which must be taken into consideration to maximize the performance of the process. The most recent research on the micro-milling process inputs is discussed in detail from a process output perspective to determine how the process as a whole can be improved. Additionally, newly developed processes that combine conventional micro-milling with other technologies, which have great prospects in reducing the issues related to the physical process phenomena, are also introduced. Finally, the major applications of this versatile precision machining process are discussed with important insights into how the application range may be further broadened.

Si-QD Synthesis for Visible Light Emission, Color Conversion, and Optical Switching

This paper reviews the developing progress on the synthesis of the silicon quantum dots (Si-QDs) via the different methods including electrochemical porous Si, Si ion implantation, and plasma enhanced chemical vapor deposition (PECVD), and exploring their featured applications for light emitting diode (LED), color-converted phosphors, and waveguide switching devices. The characteristic parameters of Si-QD LED via different syntheses are summarized for discussion. At first, the photoluminescence spectra of Si-QD and accompanied defects are analyzed to distinguish from each other. Next, the synthesis of porous Si and the performances of porous Si LED reported from different previous works are compared in detail. Later on, the Si-QD implantation in silicide (SiX) dielectric films developed to solve the instability of porous Si and their electroluminescent performances are also summarized for realizing the effect of host matrix to increase the emission quantum efficiency. As the Si-ion implantation still generates numerous defects in host matrix owing to physical bombardment, the PECVD method has emerged as the main-stream methodology for synthesizing Si-QD in SiX semiconductor or dielectric layer. This method effectively suppresses the structural matrix imperfection so as to enhance the external quantum efficiency of the Si-QD LED. With mature synthesis technology, Si-QD has been comprehensively utilized not only for visible light emission but also for color conversion and optical switching applications in future academia and industry.

Time-dependent plasticity in silicon microbeams mediated by dislocation nucleation

Understanding deformation mechanisms in silicon is critical for reliable design of miniaturized devices operating at high temperatures. Bulk silicon is brittle, but it becomes ductile at about 540 °C. It creeps (deforms plastically with time) at high temperatures (∼800 °C). However, the effect of small size on ductility and creep of silicon remains elusive. Here, we report that silicon at small scales may deform plastically with time at lower temperatures (400 °C) above a threshold stress. We achieve this stress by bending single-crystal silicon microbeams using an in situ thermomechanical testing stage. Small size, together with bending, localize high stress near the surface of the beam close to the anchor. This localization offers flaw tolerance, allowing ductility to win over fracture. Our combined scanning, transmission electron microscopy, and atomic force microscopy analysis reveals that as the threshold stress is approached, multiple dislocation nucleation sites appear simultaneously from the high-stressed surface of the beam with a uniform spacing of about 200 nm between them. Dislocations then emanate from these sites with time, lowering the stress while bending the beam plastically. This process continues until the effective shear stress drops and dislocation activities stop. A simple mechanistic model is presented to relate dislocation nucleation with plasticity in silicon.

New functional material: spark plasma sintered Si/SiO2 nanoparticles – fabrication and properties

A bulk nanostructured material based on oxidized silicon nanopowder was fabricated using a spark plasma sintering technique. Structural investigations revealed that this material has the composition of ∼14 nm core Si granules inside an SiO₂ shell. Photoluminescence measurements have shown that the emission spectra lie in the energy range of 0.6–1.1 eV, which is not typical of the emissions of the Si/SiO₂ nanostructures reported in numerous papers. This result can be explained by the formation of energy states in the bandgap and the participation of these states in both electronic transport and photoluminescence emission. Annealing of the sample leads to a decrease in defect density, which in turn leads to quenching of the 0.6–1.1 eV photoluminescence. In this case ∼1.13 eV inter-band transitions in the Si core start to play a dominant role in radiative recombination. Thus, the possibility of controlling the photoluminescence emission over a broad wavelength range was demonstrated.

A bulk nanostructured material based on oxidized silicon nanopowder was fabricated using a spark plasma sintering technique.

Hydrothermal synthesis, characterization and enhanced photocatalytic activity and toxicity studies of a rhombohedral Fe2O3nanomaterial

The present investigation focuses on the synthesis of metal oxide nanoparticles (MONPs)viaa facile hydrothermal route.

Self-Reporting Photoluminescent Porous Silicon Microparticles for Drug Delivery

A porous Si (pSi) microparticle-based delivery system is investigated, and the intrinsic luminescence from the particles is employed as a probe to monitor the release of a model protein payload, bovine serum albumin (BSA). The microparticles consist of a core Si skeleton surrounded by a SiO₂ shell. Two types of pSi are tested, one with smaller (10 nm) pores and the other with larger (20 nm) pores. The larger pore material yields a higher mass loading of BSA (3 vs 20%). Two different methods are used to load BSA into these nanostructures: the first involves loading by electrostatic physisorption, and the second involves trapping of BSA in the pSi matrix by local precipitation of magnesium silicate. Protein release from the former system is characterized by a burst release, whereas in the latter system, release is controlled by dissolution of the pSi/magnesium silicate matrix. The protein release characteristics are studied under accelerated (0.1 M aqueous KOH, 21 °C) and physiologically relevant (phosphate-buffered saline, pH 7.4, 37 °C) conditions, and the near-infrared photoluminescence signal from the pSi skeleton is monitored as a function of time and correlated with protein release and silicon dissolution. The thickness of the Si core and the SiO₂ shell are systematically varied, and it is found that the luminescence signature can be tuned to provide a signal that either scales with protein elution or that changes rapidly near the end of useful life of the delivery system. Although payload release and particle dissolution are not driven by the same mechanism, the correlations between luminescence and payload elution for the various formulations can be used to define design rules for this self-reporting delivery system.

Study of Colloidal Suspensions of Silicon Nanoparticles: Effect of Surface Oxidation on the Photoluminescence Property

Nanosilicon is currently under intensive research owing to its extremely promising properties, particularly in photonics domain. However, the photoluminescence (PL) mechanism of silicon nanocrystal remains unclear. We propose, in this paper, a simple method to investigate the PL properties of silicon nanoparticles by exposing the nanoparticles directly to the solvents. The interaction between the nanoparticles and different solvents allows us to assume that not only the quantum size effect but also the surface defect states play a critical role in the PL mechanism, especially at high energy region. This can be confirmed by the results of Transmission Electron Microscopy, FTIR and Raman Spectroscopy.

Quantum theory of electroabsorption in semiconductor nanocrystals

We develop a simple quantum-mechanical theory of interband absorption by semiconductor nanocrystals exposed to a dc electric field. The theory is based on the model of noninteracting electrons and holes in an infinitely deep quantum well and describes all the major features of electroabsorption, including the Stark effect, the Franz-Keldysh effect, and the field-induced spectral broadening. It is applicable to nanocrystals of different shapes and dimensions (quantum dots, nanorods, and nanoplatelets), and will prove useful in modeling and design of electrooptical devices based on ensembles of semiconductor nanocrystals.

Raman study of laser-induced heating effects in free-standing silicon nanocrystals

This paper demonstrates that free-standing silicon nanocrystals (Si NCs) have significantly different thermal conductivity properties compared to Si NCs embedded in a host matrix. The temperatures of Si NCs under laser illumination have been determined by measuring the ratio of the Anti-Stokes to Stokes intensities of the first order Si-Si transverse optical (TO) phonon mode. It is found that large free-standing Si NCs are easily heated up to ∼953 K by the laser light. The laser heating effects are reversible to a large extent, however the nature of the free-standing Si NCs is slightly modified after intensive illumination. The free-standing Si NCs can even be easily melted when exposed to a well-focused laser beam. Under these conditions, the blackbody radiation of the heated Si NCs starts to compete with the detected Raman signals. A simplified model of the heating effects is proposed to study the size dependence of the heated free-standing Si NCs with increasing laser power. It is concluded that the huge red-shift of the Si-Si TO mode observed under intensive laser illumination originates from laser-induced heating effects. In contrast, under similar illumination conditions Si NCs embedded in matrixes are hardly heated due to better thermal conductivity.

Optical and Structural Properties of Si Nanocrystals in SiO2 Films

Optical and structural properties of Si nanocrystals (Si-nc) in silica films are described. For the SiO_x (x < 2) films annealed above 1000 °C, the Raman signal of Si-nc and the absorption coefficient are proportional to the amount of elemental Si detected by X-ray photoelectron spectroscopy. A good agreement is found between the measured refractive index and the value estimated by using the effective-medium approximation. The extinction coefficient of elemental Si is found to be between the values of crystalline and amorphous Si. Thermal annealing increases the degree of Si crystallization; however, the crystallization and the Si–SiO₂ phase separation are not complete after annealing at 1200 °C. The 1.5-eV PL quantum yield increases as the amount of elemental Si decreases; thus, this PL is probably not directly from Si-nc responsible for absorption and detected by Raman spectroscopy. Continuous-wave laser light can produce very high temperatures in the free-standing films, which changes their structural and optical properties. For relatively large laser spots, the center of the laser-annealed area is very transparent and consists of amorphous SiO₂. Large Si-nc (up to ~300 nm in diameter) are observed in the ring around the central region. These Si-nc lead to high absorption and they are typically under compressive stress, which is connected with their formation from the liquid phase. By using strongly focused laser beams, the structural changes in the free-standing films can be made in submicron areas.

Core-shell Ti@Si coaxial nanorod arrays formed directly on current collectors for lithium-ion batteries

Silicon is a promising candidate to replace the dominantly used carbon as the anode material for lithium ion batteries (LIBs). Si has the highest theoretical capacity (4200 mA·h/g) and is one of the most abundant elements. Unfortunately, Si has the issues of huge volume variation upon dis/charge cycling and low conductivity, leading to poor cycling and rate performances. Designing special nanostructures and improving conductivity and integration of Si electrodes could dramatically enhance their performance. Here, we introduce a novel strategy to integrate the core-shell nanorod arrays of Ti@Si on Ti foil with good conductivity as an additive-free electrode. The Ti core functions as a stable metallic support for the Si shell and dramatically reduces the diffusion length. The as-prepared core-shell nanorod arrays of Ti@Si on Ti foil, without any postsynthesis treatment, as electrodes demonstrated reversible capacity of 1125 mA·h/g over at least 30 cycles with highly improved Coulombic efficiency.

Influence of inhomogeneous porosity on silicon nanowire Raman enhancement and leaky mode modulated photoluminescence

Metal-assisted chemical etching (MACE) offers an inexpensive, massively parallel fabrication process for producing silicon nanowires (SiNWs). These nanowires can possess a degree of porosity depending on etch conditions. Because the porosity is often spatially inhomogeneous, there is a need to better understand its nature if applications exploiting the porosity are to be pursued. Here, the resolution afforded by micro-Raman and micro-photoluminescence (PL) is used to elucidate the effects of porosity heterogeneity on the optical properties of individual SiNWs produced in large arrays with MACE, while also determining the spatial character of the heterogeneity. For highly porous SiNWs, there is a dramatic reduction in Raman signal and an increase in PL near the SiNW tips. PL spectra collected along the SiNW length exhibit peaks due to leaky mode resonances. Analysis of the PL resonance peaks, Raman spectrum line shape, SEM images, and EDS spectra indicate that the SiNWs possess both radial and axial heterogeneity wherein, from base to SiNW tip, the SiNWs comprise a shell of increasingly thick porous Si surrounding a tapering core of bulk Si. This work describes how structural porosity variation shapes SiNW optical properties, which will influence the design of new SiNW-based photonic devices and chemical/biological sensors.

Well dispersed silicon nanospheres synthesized by RF thermal plasma treatment and their high thermal conductivity and dielectric constant in polymer nanocomposites

Nanocomposites with high thermal conductivity and large dielectric constant incorporated with Si nanospheres prepared by thermal plasma are reported.

Laser-induced greenish-blue photoluminescence of mesoporous silicon nanowires

Solid silicon nanowires and their luminescent properties have been widely studied, but lesser is known about the optical properties of mesoporous silicon nanowires (mp-SiNWs). In this work, we present a facile method to generate greenish-blue photoluminescence (GB-PL) by fast scanning a focused green laser beam (wavelength of 532 nm) on a close-packed array of mp-SiNWs to carry out photo-induced chemical modification. The threshold of laser power is 5 mW to excite the GB-PL, whose intensity increases with laser power in the range of 5–105 mW. The quenching of GB-PL comes to occur beyond 105 mW. The in-vacuum annealing effectively excites the GB-PL in the pristine mp-SiNWs and enhances the GB-PL of the laser-modified mp-SiNWs. A complex model of the laser-induced surface modification is proposed to account for the laser-power and post-annealing effect. Moreover, the fast scanning of focused laser beam enables us to locally tailor mp-SiNWs en route to a wide variety of micropatterns with different optical functionality, and we demonstrate the feasibility in the application of creating hidden images.

Terahertz wire grid polarizer fabricated by imprinting porous silicon

A terahertz (THz) wire-grid polarizer is fabricated by imprinting porous Si followed by oblique evaporation of Ag. We demonstrate that it works in a wide frequency region covering from 5 to 18 THz with the extinction ratio of 10 dB. The frequency region is much wider than that of THz wire-grid polarizers fabricated by conventional imprint lithography using organic materials. The result suggests that imprinting of porous Si is a promising fabrication technique to realize low-cost wire-grid polarizers working in the THz region.

Surface-engineered silicon nanocrystals

Quantum confined silicon nanocrystals (Si-ncs) exhibit intriguing properties due to silicon's indirect bandgap and their highly reactive surfaces. In particular the interplay of quantum confinement with surface effects reveals a complex scenario, which can complicate the interpretation of Si-nc properties and prediction of their corresponding behaviour. At the same time, the complexity and interplay of the different mechanisms in Si-ncs offer great opportunities with characteristics that may not be achievable with other nano-systems. In this context, a variety of carefully surface-engineered Si-ncs are highly desirable both for improving our understanding of Si-nc photo-physics and for their successful integration in application devices. Here we firstly highlight a selection of theoretical efforts and experimental surface engineering approaches and secondly we focus on recent surface engineering results that have utilized novel plasma-liquid interactions.

Optical extinction spectra of silicon nanocrystals: size dependence upon the lowest direct transition

We investigate the size-dependent optical extinction properties of colloidal silicon nanocrystals (Si NCs) from the near infrared (NIR) to the ultraviolet (UV). Experimental results are compared to the Mie solution to Maxwell's equations using the same refractive index as bulk Si to evaluate the deviation from bulk properties. We find that the energy for the lowest direct transition (E(1)) continuously blueshifts from near bulk-like at ~3.4 eV in large NCs (16 nm) to ~3.6 eV for small NCs (3.9 nm), contrary to the Mie solution. The extinction cross-section of NCs on a per atom basis was found to be independent of the NC size, within our experimental resolution. The results suggest that quantum confinement effects strongly influence excitons associated with the E(1) transition.

Porous silicon nanocrystals in a silica aerogel matrix

Silicon nanoparticles of three types (oxide-terminated silicon nanospheres, micron-sized hydrogen-terminated porous silicon grains and micron-size oxide-terminated porous silicon grains) were incorporated into silica aerogels at the gel preparation stage. Samples with a wide range of concentrations were prepared, resulting in aerogels that were translucent (but weakly coloured) through to completely opaque for visible light over sample thicknesses of several millimetres. The photoluminescence of these composite materials and of silica aerogel without silicon inclusions was studied in vacuum and in the presence of molecular oxygen in order to determine whether there is any evidence for non-radiative energy transfer from the silicon triplet exciton state to molecular oxygen adsorbed at the silicon surface. No sensitivity to oxygen was observed from the nanoparticles which had partially H-terminated surfaces before incorporation, and so we conclude that the silicon surface has become substantially oxidised. Finally, the FTIR and Raman scattering spectra of the composites were studied in order to establish the presence of crystalline silicon; by taking the ratio of intensities of the silicon and aerogel Raman bands, we were able to obtain a quantitative measure of the silicon nanoparticle concentration independent of the degree of optical attenuation.

Diffusion Length Measurements of Minority Carriers in Si-SiO2 Using the Photo-Grating Technique

We have studied the microstructure, the transport and the phototransport properties of the Si crystallites network in Si-SiO2 composites. We have found that in our co-sputtered samples the average crystallite diameter, d, decreases from 40 to 5 nm as the content of the silicon, x, decreases from 80 to 40 volume%, and that the percolation of the network sets is at x ≈ 40 vol%. A simultaneous study of the photoluminescence (PL) shows the, quantum confinement, expected red shift of its peak with increasing d. On the other hand the very strong observed decrease of the PL intensity with x is interpreted here as due to a deconfinement effect that is dominated by the increase in the cluster size of connected Si crystallites. The results suggest that a closed random packing of the Si crystallites will be the preferred network for high intensity electroluminescence.

Photoluminescence Excitation Spectroscopy Of Porous Silicon

We combine photoluminescence excitation spectroscopy and photoconductivity to extract information about the bandgap and particle size distribution of porous silicon. This allows us to specify the influence of size dispersion and to show that different methods to determine absorption probe different parts of the size distribution.

Blue and Green Electroluminescence from Porous Materials

In applying porous Si (PS) to color display technology, it is important to fabricate light emitting devices with three primary colors. However, there have been few reports on blue and green electroluminescence (EL), and its mechanism (even the relationship between PL and EL spectra) is unclear. To obtain blue and green EL and to investigate its mechanism, we have formed PS anodized under UV illumination (UV-PS) with green photoluminescence (PL) and porous SiC with blue PL. Consequently, green and blue light emitting devices were successfully fabricated by using these materials. The observed spectra are from 350 to 750 nm with a peak of, 520 nm for ITO / UV-PS junctions and from 300 to 600 nm with a peak of 470 nm for ITO / porous SiC junctions. The EL mechanism is also discussed by reference to experimental results of comparing PL and EL spectra and of investigating the dependence of EL intensity on current.

Controlled Passivation and Luminescence Blue Shifts of Isolated Silicon Nanocrystals

We have performed a comparative study of oxide- and nonoxide-passivated silicon nanocrystals to probe the role of the silicon/oxygen interface in low coverage, non-interacting silicon nanocrystal systems. Ensembles of Si nanocrystals characterized by a narrow distribution and diameters of 2–5 nm were synthesized by ion implantation into SiO2 films followed by a high-temperature anneal in Ar. The nanocrystals were removed from the SiO2 film matrix and deposited on Si substrates using a chemical etch in HF, leaving a hydrogen-terminated surface. A natural oxide layer grows on these surfaces in air. We characterized the morphology of the samples with atomic force microscopy (AFM) and the spectroscopic properties with photoluminescence (PL) and X-Ray photoelectron spectroscopy. We found that the PL energy of Si nanocrystals can be shifted by particle size reduction and hydrogen or oxygen termination. Further, PL peak energy shifts upon etching and oxidation were consistent with the model of Wolkin et al. that proposes that for very small radii, a silicon-oxygen double bond will produce deep interface states which red shift the luminescence.

Hybrid luminescent/magnetic nanostructured porous silicon particles for biomedical applications

This work describes a novel process for the fabrication of hybrid nanostructured particles showing intense tunable photoluminescence and a simultaneous ferromagnetic behavior. The fabrication process involves the synthesis of nanostructured porous silicon (NPSi) by chemical anodization of crystalline silicon and subsequent in pore growth of Co nanoparticles by electrochemically-assisted infiltration. Final particles are obtained by subsequent sonication of the Co-infiltrated NPSi layers and conjugation with poly(ethylene glycol) aiming at enhancing their hydrophilic character. These particles respond to magnetic fields, emit light in the visible when excited in the UV range, and internalize into human mesenchymal stem cells with no apoptosis induction. Furthermore, cytotoxicity in in-vitro systems confirms their biocompatibility and the viability of the cells after incorporation of the particles. The hybrid nanostructured particles might represent powerful research tools as cellular trackers or in cellular therapy since they allow combining two or more properties into a single particle.

Anomalous patterned scattering spectra of one-dimensional porous silicon photonic crystals

Far-field secondary emission spectra of one-dimensional periodic photonic structures based on porous silicon show characteristic co-focal rings centered close to the structure plane normal. The rings appear when the frequency of picosecond excitation laser pulses is tuned to the edges of the fourth photonic band gap. They can be clearly distinguished from the typical reflected and transmitted light in the oblique incidence geometry. The rings number is dependent on the excitation frequency and the incidence angle. We explain these anomalous spectral features of porous silicon structures by the spectral filtering of light elastically scattered inside the photonic structure by the narrow photonic bands. The elastic scattering of light due to the photonic disorder in the structure causes the appearance of secondary waves propagating in any direction. But only those waves which fall into the allowed photonic bands penetrate through the whole structure and move through its front or back surfaces. The observed patterned secondary emission is an example of efficient photonic engineering by simple means of multilayer porous silicon structures.

Identification of surface structures on 3C-SiC nanocrystals with hydrogen and hydroxyl bonding by photoluminescence

SiC nanocrystals (NCs) exhibit unique surface chemistry and possess special properties. This provides the opportunity to design suitable surface structures by terminating the surface dangling bonds with different atoms thereby boding well for practical applications. In this article, we report the photoluminescence properties of 3C-SiC NCs in water suspensions with different pH values. Besides a blue band stemming from the quantum confinement effect, the 3C-SiC NCs show an additional photoluminescence band at 510 nm when the excitation wavelengths are longer than 350 nm. Its intensity relative to the blue band increases with the excitation wavelength. The 510 nm band appears only in acidic suspensions but not in alkaline ones. Fourier transform infrared, X-ray photoelectron spectroscopy, and X-ray absorption near-edge structure analyses clearly reveal that the 3C-SiC NCs in the water suspension have Si-H and Si-OH bonds on their surface, implying that water molecules only react with a Si-terminated surface. First-principle calculations suggest that the additional 510 nm band arises from structures induced by H(+) and OH(-) dissociated from water and attached to Si dimers on the modified (001) Si-terminated portion of the NCs. The size requirement is consistent with the observation that the 510 nm band can only be observed when the excitation wavelengths are relatively large, that is, excitation of bigger NCs.

Study of silicon nanofibrous structure formed by femtosecond laser irradiation in air

In this study, we report first time the effect of laser pulse repetition frequency and pulse width of femtosecond laser radiation on silicon nanofibrous structure formation under ambient condition. Surface nanotexture analysis revealed the changes in fibrous structure density and size in respect of laser pulse width and repetition frequency. A phonon confinement model is used to explain the Raman spectra of processed specimens in order to understand the structure details of nanofibrous structure and hence to support the surface nanotexture analysis. The present investigation leads to a conclusion that nanofibrous structure is formed due to the aggregation of silicon nanoparticles and their size is estimated using the confinement model which is in the order of few nanometers.

Electronic states and luminescence in higher fullerene/porous Si nanocrystal composites

Photoluminescence (PL) measurements have been performed on the nanocomposites of higher fullerene-coupled porous silicon (PS) nanocrystals. For the C70PS and C76(78)PS nanocomposites, the PL spectra show a pinning wavelength at approximately 565 nm and for the C84PS and C94PS nanosystems the pinning wavelength is at approximately 590 nm. The PL pinning property is closely related to the sorts of the coupled fullerenes. A band mixing model of direct and indirect gaps in a nanometer environment consisting of nc-Si core, SiO2 surface layer, and coupled fullerene has been proposed for calculation of electronic states. Good agreement is achieved between the experiments and theory.

Optical Analysis of the Light Emission from Porous Silicon: A Hybrid Polyatom Surface-Coupled Fluorophor

The most extensive data set yet generated correlating photoluminescence excitation (PLE) and photoluminescence (PL) spectra is presented for aged (equilibrated) porous silicon (PS) samples. The observed features, which are temperature independent over the range 10-300 K, show a detailed correlation with the results of photoacoustic spectroscopy (PAS) and with molecular electronic structure calculations. The observed energy level patterns are reproduced in the photoabsorption (PA) of PS films released after the etching of a silicon wafer. It is concluded that the energy level pattern found for the photoluminescing surface of PS results from a structure which is neither uniquely molecule- or bulk-like but represents a hybrid form for which the density of states associated with a polyatomic vibrationally excited surface-bound fluorophor dominates the nature of the observed features which are not those of a semiconductor. These fluorophor features are broadened and shifted to lower excitation energy as a result of the intimate presence of the silicon surface to which the fluorophor is bound. The dominance of the surface-bound fluorophor accounts for the temperature-independent PLE and PL features. The observed spectral features are thus suggested to be the result of a strong synergistic interaction in which the silicon surface influences the location of surface-bound fluorophor excited states whereas the nature of the vibrationally excited surface-bound fluorophor coupling to the silicon surface provides the mechanism for an enhanced vibronic structure dominated interaction and energy transfer. The observed PLE, PL, PAS, and PA measurements are found to be consistent with previous photovoltaic and photoconductivity measurements, correlating well with a surface-bound oxyhydride-like emitter. This study suggests the important role that the overtone structure of a molecule bound to a surface can play as one forms a hybrid system.

Experimental evidence for the quantum confinement effect in 3C-SiC nanocrystallites

Using electrochemical etching of a polycrystalline 3C-SiC target and subsequent ultrasonic treatment in water solution, we have fabricated suspensions of 3C-SiC nanocrystallites that luminesce. Transmission electron microscope observations show that the 3C-SiC nanocrystallites, which uniformly disperse in water, have sizes in the range of 1-6 nm. Photoluminescence and photoluminescence excitation spectral examinations show clear evidence for the quantum confinement of 3C-SiC nanocrystallites with the emission band maximum ranging from 440 to 560 nm. Tunable, composite polystyrene/SiC film can be made by adding polystyrene to a toluene suspension of the 3C-SiC nanocrystallites and then coating the resulting solution onto a Si wafer.

Optical emission from excess Si defect centers in Si nanostructures

Four groups of Si nanostructures with and without beta-SiC nanocrystals were fabricated for clarifying the origin of a blue emission with a double-peak structure at 417 and 436 nm. Spectral analyses and microstructural observations show that the blue emission is related to the existence of excess Si atoms in these Si nanostructures. The energy levels of electrons in Si nanocrystals with vacancy defects formed from the excess Si atoms are calculated and the characteristics of the obtained density of states coincide with the observed double-peak emission. The present work provides a possible mechanism of the blue emission in various Si nanostructures.

Width of Raman Line from Porous Silicon Independent of Total Charge Consumed During Anodization

We investigated the Raman spectra as a function of the total electric charge consumed in forming porous silicon. It was found that the Raman peak shifted to the lower wave number side as the total electric charge increased. However, the width of the Raman line was insensitive to the total electric charge. It shows the size of nanocrystallites can be widely ranged regardless of the degree of electrochemical reactions during anodization.