Dark-field transmission electron microscopy and the Debye-Waller factor of graphene

Role of Bilayer Graphene Microstructure on the Nucleation of WSe2 Overlayers

Over the past few years, graphene grown by chemical vapor deposition (CVD) has gained prominence as a template to grow transition metal dichalcogenide (TMD) overlayers. The resulting two-dimensional (2D) TMD/graphene vertical heterostructures are attractive for optoelectronic and energy applications. However, the effects of the microstructural heterogeneities of graphene grown by CVD on the growth of the TMD overlayers are relatively unknown. Here, we present a detailed investigation of how the stacking order and twist angle of CVD graphene influence the nucleation of WSe₂ triangular crystals. Through the combination of experiments and theory, we correlate the presence of interlayer dislocations in bilayer graphene with how WSe₂ nucleates, in agreement with the observation of a higher nucleation density of WSe₂ on top of Bernal-stacked bilayer graphene versus twisted bilayer graphene. Scanning/transmission electron microscopy (S/TEM) data show that interlayer dislocations are present only in Bernal-stacked bilayer graphene but not in twisted bilayer graphene. Atomistic ReaxFF reactive force field molecular dynamics simulations reveal that strain relaxation promotes the formation of these interlayer dislocations with localized buckling in Bernal-stacked bilayer graphene, whereas the strain becomes distributed in twisted bilayer graphene. Furthermore, these localized buckles in graphene are predicted to serve as thermodynamically favorable sites for binding WSe_x molecules, leading to the higher nucleation density of WSe₂ on Bernal-stacked graphene. Overall, this study explores synthesis-structure correlations in the WSe₂/graphene vertical heterostructure system toward the site-selective synthesis of TMDs by controlling the structural attributes of the graphene substrate.

Prediction and realisation of high mobility and degenerate p-type conductivity in CaCuP thin films

Phosphides are interesting candidates for hole transport materials and p-type transparent conducting applications, capable of achieving greater valence band dispersion than their oxide counterparts due to the higher lying energy and increased size of the P 3p orbital. After computational identification of the indirect-gap semiconductor CaCuP as a promising candidate, we now report reactive sputter deposition of phase-pure p-type CaCuP thin films. Their intrinsic hole concentration and hole mobility exceed 1 × 10²⁰ cm⁻³ and 35 cm² V⁻¹ s⁻¹ at room temperature, respectively. Transport calculations indicate potential for even higher mobilities. Copper vacancies are identified as the main source of conductivity, displaying markedly different behaviour compared to typical p-type transparent conductors, leading to improved electronic properties. The optical transparency of CaCuP films is lower than expected from first principles calculations of phonon-mediated indirect transitions. This discrepancy could be partly attributed to crystalline imperfections within the films, increasing the strength of indirect transitions. We determine the transparent conductor figure of merit of CaCuP films as a function of composition, revealing links between stoichiometry, crystalline quality, and opto-electronic properties. These findings provide a promising initial assessment of the viability of CaCuP as a p-type transparent contact.

We synthesize air-stable, p-type CaCuP thin films with high hole concentration and high hole mobility as potential p-type transparent conductors. We study their optoelectronic properties in detail by advanced experimental and computational methods.

From graphene to graphene oxide: the importance of extended topological defects

Graphene oxide (GO) represents a complex family of materials related to graphene: easy to produce in large quantities, easy to process, and convenient to use as a basis for further functionalization, with the potential for wide-ranging applications such as in nanocomposites, electronic inks, biosensors and more. Despite their importance, the key structural traits of GO, and the impact of these traits on properties, are still poorly understood due to the inherently berthollide character of GO which complicates the establishment of clear structure/property relationships. Widely accepted structural models of GO frequently neglect the presence of extended topological defects, structural changes to the graphene basal plane that are not removed by reduction methods. Here, a combination of experimental approaches and molecular simulations demonstrate that extended topological defects are a common feature across GO and that the presence of these defects strongly influences the properties of GO. We show that these extended topological defects are produced following even controlled 'gentle' functionalization by atomic oxygen and are comparable to those obtained by a conventional modified Hummers' method. The presence of the extended topological defects is shown to play an important role in the retention of oxygen functional groups after reduction. As an exemplar of their effect on the physical properties, we show that the GO sheets display a dramatic decrease in strength and stiffness relative to graphene and, due to the presence of extended structural defects, no improvement is seen in the mechanical properties after reduction. These findings indicate the importance of extended topological defects to the structure and properties of functionalized graphene, which merits their inclusion as a key trait in simple structural models of GO.

Chemical Vapour Deposition of Graphene-Synthesis, Characterisation, and Applications: A Review

Graphene as the 2D material with extraordinary properties has attracted the interest of research communities to master the synthesis of this remarkable material at a large scale without sacrificing the quality. Although Top-Down and Bottom-Up approaches produce graphene of different quality, chemical vapour deposition (CVD) stands as the most promising technique. This review details the leading CVD methods for graphene growth, including hot-wall, cold-wall and plasma-enhanced CVD. The role of process conditions and growth substrates on the nucleation and growth of graphene film are thoroughly discussed. The essential characterisation techniques in the study of CVD-grown graphene are reported, highlighting the characteristics of a sample which can be extracted from those techniques. This review also offers a brief overview of the applications to which CVD-grown graphene is well-suited, drawing particular attention to its potential in the sectors of energy and electronic devices.

A novel nondestructive diagnostic method for mega-electron-volt ultrafast electron diffraction

A real-time, nondestructive, Bragg-diffracted electron beam energy, energy-spread and spatial-pointing jitter monitor is experimentally verified by encoding the electron beam energy and spatial-pointing jitter information into the mega-electron-volt ultrafast electron diffraction pattern. The shot-to-shot fluctuation of the diffraction pattern is then decomposed to two basic modes, i.e., the distance between the Bragg peaks as well as its variation (radial mode) and the overall lateral shift of the whole pattern (drift mode). Since these two modes are completely decoupled, the Bragg-diffraction method can simultaneously measure the shot-to-shot energy fluctuation from the radial mode with 2·10⁻⁴ precision and spatial-pointing jitter from the drift mode having wide measurement span covering energy jitter range from 10⁻⁴ to 10⁻¹. The key advantage of this method is that it allows us to extract the electron beam energy spread concurrently with the ongoing experiment and enables online optimization of the electron beam especially for future high charge single-shot ultrafast electron diffraction (UED) and ultrafast electron microscopy (UEM) experiments. Furthermore, real-time energy measurement enables the filtering process to remove off-energy shots, improving the resolution of time-resolved UED. As a result, this method can be applied to the entire UED user community, beyond the traditional electron beam diagnostics of accelerators used by accelerator physicists.

Defect-enriched tunability of electronic and charge-carrier transport characteristics of 2D borocarbonitride (BCN) monolayers from ab initio calculations

Development of inexpensive and efficient photo- and electro-catalysts is vital for clean energy applications. Electronic and structural properties can be tuned by the introduction of defects to achieve the desirable electrocatalytic activity. Using first-principles molecular dynamics simulations, the structural, dynamical, and electronic properties of 2D borocarbonitride (h-BCN) sheets have been investigated, highlighting how anti-site defects in B and N doped graphene significantly influence the bandgap, and thereby open up new avenues to tune the chemical behavior of the 2D sheets. In the present work, all of the monolayers investigated display direct bandgaps, which reduce from 0.99 eV to 0.24 eV with increasing number of anti-site defects. The present results for the electronic structure and findings for bandgap engineering open up applications of BCN monolayers in optoelectronic devices and solar cells. The influence of the anti-site distribution of B and N atoms on the ultra-high hole/electron mobility and conductivity is discussed based on density functional theory coupled with the Boltzmann transport equation. The BCN defect monolayer is predicted to have carrier mobilities three times higher than that of the pristine sheet. The present results demonstrate that BN doped graphene monolayers are likely to be useful in the next-generation 2D field-effect transistors.

Thermoelectric properties of heavy fermion CeRhIn5 using density functional theory combined with semiclassical Boltzmann theory

Experimental evidences show that Ce-based compounds can be good candidates for thermoelectric applications due to their high thermoelectric efficiencies at low temperatures. However, thermoelectric properties have been studied less than the other properties for CeRhIn₅, a technologically and fundamentally important compound. Thus, we comprehensively investigate the thermoelectric properties, including the Seebeck coefficient, electrical conductivity, electronic part of thermal conductivity, power factor and electronic figure of merit, by a combination of quantum mechanical density functional and semiclassical Boltzmann theories, including relativistic spin–orbit interactions using different exchange–correlation functionals at temperatures T ≤ 300 K for CeRhIn₅ along its a and c crystalline axes. The temperature dependences of the thermoelectric quantities are investigated. Our results reveal a better Seebeck coefficient, electrical conductivity, power factor and thermoelectric efficiency at T ≪ 300, in agreement with various other Ce-based compounds, when a high degree of localization is considered for the 4f-Ce electrons. The Seebeck coefficient, power factor and thermoelectric efficiency are made more efficient near room temperature by decreasing the degree of localization for 4f-Ce electrons. Our results also show that the thermoelectric efficiency along the a crystalline axis is slightly better than that of the c axis. We also investigate the effects of hydrostatic pressure on the thermoelectric properties of the compound at low and high temperatures. The results show that the effects of imposing pressure strongly depend on the degree of localization considered for 4f-Ce electrons.

Consistent with experimental data, theoretical thermoelectric results calculated by our developed strategy show that CeRhIn₅ is a good candidate for thermoelectric cooling applications due to its high thermoelectric efficiency at low temperatures.

Double-Spiral Hexagonal Boron Nitride and Shear Strained Coalescence Boundary

Among the different growth mechanisms for two-dimensional (2D) hexagonal boron nitride (h-BN) synthesized using chemical vapor deposition, spiraling growth of h-BN has not been reported. Here we report the formation of intertwined double-spiral few-layer h-BN that is driven by screw dislocations located at the antiphase boundaries of monolayer domains. The microstructure and stacking configurations were studied using a combination of dark-field and atomic resolution transmission electron microscopy. Distinct from other 2D materials with single-spiral structures, the double-spiral structure enables the intertwined h-BN layers to preserve the most stable AA' stacking configuration. We also found that the occurrence of shear strains at the boundaries of merged spiral islands is dependent on the propagation directions of encountering screw dislocations and presented the strained features by density functional theory calculations and atomic image simulations. This study unveils the double-spiral growth of 2D h-BN multilayers and the creation of a shear strain band at the coalescence boundary of two h-BN spiral clusters.

Ultrastiff, Strong, and Highly Thermally Conductive Crystalline Graphitic Films with Mixed Stacking Order

A macroscopic film (2.5 cm × 2.5 cm) made by layer-by-layer assembly of 100 single-layer polycrystalline graphene films is reported. The graphene layers are transferred and stacked one by one using a wet process that leads to layer defects and interstitial contamination. Heat-treatment of the sample up to 2800 °C results in the removal of interstitial contaminants and the healing of graphene layer defects. The resulting stacked graphene sample is a freestanding film with near-perfect in-plane crystallinity but a mixed stacking order through the thickness, which separates it from all existing carbon materials. Macroscale tensile tests yields maximum values of 62 GPa for the Young's modulus and 0.70 GPa for the fracture strength, significantly higher than has been reported for any other macroscale carbon films; microscale tensile tests yield maximum values of 290 GPa for the Young's modulus and 5.8 GPa for the fracture strength. The measured in-plane thermal conductivity is exceptionally high, 2292 ± 159 W m^-1 K^-1 while in-plane electrical conductivity is 2.2 × 10⁵ S m^-1 . The high performance of these films is attributed to the combination of the high in-plane crystalline order and unique stacking configuration through the thickness.

Sources of error in Debye-Waller-effect measurements relevant to studies of photoinduced structural dynamics

We identify and quantify several practical effects likely to be present in both static and ultrafast electron-scattering experiments that may interfere with the Debye-Waller (DW) effect. Using 120-nm thick, small-grained, polycrystalline aluminum foils as a test system, we illustrate the impact of specimen tilting, in-plane translation, and changes in z height on Debye-Scherrer-ring intensities. We find that tilting by less than one degree can result in statistically-significant changes in diffracted-beam intensities for large specimen regions containing > 10⁵ nanocrystalline grains. We demonstrate that, in addition to effective changes in the field of view with tilting, slight texturing of the film can result in deviations from expected DW-effect behavior. Further, we find that in-plane translations of as little as 20 nm also produce statistically-significant intensity changes, while normalization to total image counts eliminates such effects arising from changes in z height. The results indicate that the use of polycrystalline films in ultrafast electron-scattering experiments can greatly reduce the negative impacts of these effects as compared to single-crystal specimens, though it does not entirely eliminate them. Thus, it is important to account for such effects when studying thin-foil specimens having relatively short reciprocal-lattice rods.

Intercalation events visualized in single microcrystals of graphite

The electrochemical intercalation of layered materials, particularly graphite, is fundamental to the operation of rechargeable energy-storage devices such as the lithium-ion battery and the carbon-enhanced lead-acid battery. Intercalation is thought to proceed in discrete stages, where each stage represents a specific structure and stoichiometry of the intercalant relative to the host. However, the three-dimensional structures of the stages between unintercalated and fully intercalated are not known, and the dynamics of the transitions between stages are not understood. Using optical and scanning transmission electron microscopy, we video the intercalation of single microcrystals of graphite in concentrated sulfuric acid. Here we find that intercalation charge transfer proceeds through highly variable current pulses that, although directly associated with structural changes, do not match the expectations of the classical theories. Evidently random nanoscopic defects dominate the dynamics of intercalation.

The common lithium-ion battery is re-charged by intercalating its graphite anode, but intercalation remains not well understood. Electron microscope video of intercalating graphite microcrystals reveals that the charge transfer occurs in current pulses that do not match theoretical expectations.

Atomic-scale diffractive imaging of sub-cycle electron dynamics in condensed matter

For interaction of light with condensed-matter systems, we show with simulations that ultrafast electron and X-ray diffraction can provide a time-dependent record of charge-density maps with sub-cycle and atomic-scale resolutions. Using graphene as an example material, we predict that diffraction can reveal localised atomic-scale origins of optical and electronic phenomena. In particular, we point out nontrivial relations between microscopic electric current and density in undoped graphene.

Effects of thermal rippling on the frictional properties of free-standing graphene

A unique case of dynamically corrugated surfaces is presented for the first time, attributed to the effect of significant thermally excited flexural waves in atomically thin layers on kinetic friction.

Molecular dynamics simulation of thermal ripples in graphene with bond-order-informed harmonic constraints

We describe the results of atomistic molecular dynamics simulations of thermal rippling in graphene with the use of a generic harmonic constraint model. The distance and angular constraint constants are calculated directly from the second-generation bond-order interatomic potential that describes carbon binding in graphene. We quantify the thermal rippling process in detail by calculating the overall rippling averages, the normal-normal correlation distributions and the height distributions. In addition, we consider the effect of a dihedral angular constraint, as well as the effect of sample size on the simulated rippling averages. The dynamic corrugation morphologies of simulated graphene samples obtained with the harmonic constraint model at various temperatures are, overall, consistent with those obtained with the bond-order potential and are in qualitative accord with previously reported findings. Given the wide availability of the harmonic constraint model in various molecular mechanics implementations, along with its high computational efficiency, our results indicate a possible use for the presented model in multicomponent dynamic simulations, including atomically thin layers.