Domain-wall motion and interfacial Dzyaloshinskii-Moriya interactions in Pt/Co/Ir(t Ir)/Ta multilayers

Self-assembly of Co/Pt stripes with current-induced domain wall motion towards 3D racetrack devices

Modification of the magnetic properties under the induced strain and curvature is a promising avenue to build three-dimensional magnetic devices, based on the domain wall motion. So far, most of the studies with 3D magnetic structures were performed in the helixes and nanowires, mainly with stationary domain walls. In this study, we demonstrate the impact of 3D geometry, strain and curvature on the current-induced domain wall motion and spin-orbital torque efficiency in the heterostructure, realized via a self-assembly rolling technique on a polymeric platform. We introduce a complete 3D memory unit with write, read and store functionality, all based on the field-free domain wall motion. Additionally, we conducted a comparative analysis between 2D and 3D structures, particularly addressing the influence of heat during the electric current pulse sequences. Finally, we demonstrated a remarkable increase of 30% in spin-torque efficiency in 3D configuration.

Local Control of a Single Nitrogen-Vacancy Center by Nanoscale Engineered Magnetic Domain Wall Motion

Effective control and readout of qubits form the technical foundation of next-generation, transformative quantum information sciences and technologies. The nitrogen-vacancy (NV) center, an intrinsic three-level spin system, is naturally relevant in this context due to its excellent quantum coherence, high fidelity of operations, and remarkable functionality over a broad range of experimental conditions. It is an active contender for the development and implementation of cutting-edge quantum technologies. Here, we report magnetic domain wall motion driven local control and measurements of the NV spin properties. By engineering the local magnetic field environment of an NV center via nanoscale reconfigurable domain wall motion, we show that NV photoluminescence, spin level energies, and coherence time can be reliably controlled and correlated to the magneto-transport response of a magnetic device. Our results highlight the electrically tunable dipole interaction between NV centers and nanoscale magnetic structures, providing an attractive platform to realize interactive information transfer between spin qubits and nonvolatile magnetic memory in hybrid quantum spintronic systems.

Local Manipulation of Skyrmion Nucleation in Microscale Areas of a Thin Film with Nitrogen-Ion Implantation

Precise manipulation of skyrmion nucleation in microscale or nanoscale areas of thin films is a critical issue in developing high-efficient skyrmionic memories and logic devices. Presently, the mainstream controlling strategies focus on the application of external stimuli to tailor the intrinsic attributes of charge, spin, and lattice. This work reports effective skyrmion manipulation by controllably modifying the lattice defect through ion implantation, which is potentially compatible with large-scale integrated circuit technology. By implanting an appropriate dose of nitrogen ions into a Pt/Co/Ta multilayer film, the defect density was effectively enhanced to induce an apparent modulation of magnetic anisotropy, consequently boosting the skyrmion nucleation. Furthermore, the local control of skyrmions in microscale areas of the macroscopic film was realized by combining the ion implantation with micromachining technology, demonstrating a potential application in both binary storage and multistate storage. These findings provide a new approach to advancing the functionalization and application of skyrmionic devices.

Engineering Pt/Co/AlOxheterostructures to enhance the Dzyaloshinskii-Moriya interaction

The study of interfacial Dzyaloshinskii-Moriya interaction (DMI) in perpendicularly magnetized structurally asymmetric heavy metal/ferromagnet multilayer systems is of high importance due to the formation of chiral magnetic textures in the presence of DMI. Here, we report the impact of cobalt oxidation at the Co/AlO_xinterface in Pt/Co/AlO_xtrilayer structures on the DMI by varying the post-growth annealing time, Al thickness and substrate. To quantify DMI we employed magneto-optical imaging of the asymmetric domain wall expansion, hysteresis loop shift, and spin-wave spectroscopy techniques. We further correlated the Co oxidation with low-temperature Hall effect measurements and x-ray photoelectron spectroscopy. Our results emphasize the importance of full characterization of the magnetic films that could be used for magnetic random access memory technologies when subjected to the semiconductor temperature processing conditions, as the magnetic interactions are critical for device performance and can be highly sensitive to oxidation and other effects.

Dzyaloshinskii-Moriya interaction determined from spin wave nonreciprocity and magnetic bubble asymmetry in Pt/Co/Ir/Co/Pt synthetic ferrimagnets

We present analysis of the effect of Dzyaloshinskii-Moriya interaction (DMI) on spin wave nonreciprocity and bubble expansion asymmetry in Pt/Co/Ir/Co/Pt synthetic ferrimagnets with perpendicular magnetic anisotropy. We propose analysis of the DMI by Brillouin light scattering technique (BLS) and Kerr microscopy (MOKE) in the presence of interlayer exchange coupling strongly changing spin wave dispersion law and field dependences of domain wall velocity in comparison with those observed earlier in Ir/Co/Pt structures with a single Co layer. We have determined DMI values of each Co layer from unusually inverted dependence of velocity of the domain wall on in-plane magnetic field. Opposite signs of effective fields and DMI fields in the two Co layers invert field dependence of the domain wall velocity. DMI energy determined from BLS is higher than values, determined by bubble expansion.

Programmable Dynamics of Exchange-Biased Domain Wall via Spin-Current-Induced Antiferromagnet Switching

Magnetic domain wall (DW) motion in perpendicularly magnetized materials is drawing increased attention due to the prospect of new type of information storage devices, such as racetrack memory. To augment the functionalities of DW motion-based devices, it is essential to improve controllability over the DW motion. Other than electric current, which is known to induce unidirectional shifting of a train of DWs, an application of in-plane magnetic field also enables the control of DW dynamics by rotating the DW magnetization and consequently modulating the inherited chiral DW structure. Applying an external bias field, however, is not a viable approach for the miniaturization of the devices as the external field acts globally. Here, the programmable exchange-coupled DW motion in the antiferromagnet (AFM)/ferromagnet (FM) system is demonstrated, where the role of an external in-plane field is replaced by the exchange bias field from AFM layer, enabling the external field-free modulations of DW motions. Interestingly, the direction of the exchange bias field can also be reconfigured by simply injecting spin currents through the device, enabling electrical and programmable operations of the device. Furthermore, the result inspires a prototype DW motion-based device based on the AFM/FM heterostructure, that could be easily integrated in logic devices.

Interfacial Dzyaloshinskii-Moriya interaction in the epitaxial W/Co/Pt multilayers

The Dzyaloshinskii-Moriya interaction (DMI) manifesting in asymmetric layered ferromagnetic films gives rise to non-colinear spin structures stabilizing magnetization configurations with nontrivial topology. In this work magnetization reversal, magnetic domain alignment, and strength of DMI are related to the crystalline structure of W/Co/Pt multilayers grown by molecular beam epitaxy. The applied growth method enables the fabrication of layered systems with higher crystalline quality than commonly applied sputtering techniques. A relatively high value of the D coefficient was determined from the aligned magnetic domain stripe structure, substantially exceeding 2 mJ m-2. The highest value of DMI strength Deff = 2.64 mJ m-2 and surface DMI parameter DS = 1.83 pJ m-1 have been observed for a repetition number equal to 10. The experimental results correlate exactly with those obtained from the micromagnetic modelling and density functional theory calculations performed for the well-defined layered stacks. This high value of DMI strength originates from the additive contributions of the interfacial atomic Co layers at the two types of interfaces.

Highly Anisotropic Magnetic Domain Wall Behavior in In-Plane Magnetic Films

We have studied the nucleation of magnetic domains and propagation of magnetic domain walls (DWs) induced by pulsed magnetic field in a ferromagnetic film with in-plane uniaxial anisotropy. In contrast to observed behavior in films with out-of-plane anisotropy, the nucleated domains have a rectangular shape in which a pair of the opposite sides are perfectly linear DWs, while the other pair present zigzags. The field induced propagation of these two DW types are found to be different. The linear ones follow a creep law identical to what is usually observed in out-of-plane films, while the velocity of zigzag DWs depends linearly on the applied field amplitude down to very low field. This unexpected feature can be explained by the shape of the DW, and these results provide first experimental evidence of the applicability of the 1D model in two-dimensional ferromagnetic thin films.

Dynamics of chiral solitons driven by polarized currents in monoaxial helimagnets

Chiral solitons are one dimensional localized magnetic structures that are metastable in some ferromagnetic systems with Dzyaloshinskii–Moriya interactions and/or uniaxial magnetic anisotropy. Though topological textures in general provide a very interesting playground for new spintronics phenomena, how to properly create and control single chiral solitons is still unclear. We show here that chiral solitons in monoaxial helimagnets, characterized by a uniaxial Dzyaloshinskii–Moriya interaction, can be stabilized with external magnetic fields. Once created, the soliton moves steadily in response to a polarized electric current, provided the induced spin-transfer torque has a dissipative (nonadiabatic) component. The structure of the soliton depends on the applied current density in such a way that steady motion exists only if the applied current density is lower than a critical value, beyond which the soliton is no longer stable.

Tuning interfacial Dzyaloshinskii-Moriya interactions in thin amorphous ferrimagnetic alloys

Skyrmions can be stabilized in magnetic systems with broken inversion symmetry and chiral interactions, such as Dzyaloshinskii-Moriya interactions (DMI). Further, compensation of magnetic moments in ferrimagnetic materials can significantly reduce magnetic dipolar interactions, which tend to favor large skyrmions. Tuning DMI is essential to control skyrmion properties, with symmetry breaking at interfaces offering the greatest flexibility. However, in contrast to the ferromagnet case, few studies have investigated interfacial DMI in ferrimagnets. Here we present a systematic study of DMI in ferrimagnetic CoGd films by Brillouin light scattering. We demonstrate the ability to control DMI by the CoGd cap layer composition, the stack symmetry and the ferrimagnetic layer thickness. The DMI thickness dependence confirms its interfacial nature. In addition, magnetic force microscopy reveals the ability to tune DMI in a range that stabilizes sub-100 nm skyrmions at room temperature in zero field. Our work opens new paths for controlling interfacial DMI in ferrimagnets to nucleate and manipulate skyrmions.

Ultra-efficient spin-orbit torque induced magnetic switching in W/CoFeB/MgO structures

Spin-orbit torque (SOT) induced magnetic switching in heavy metal/ferromagnet structures with perpendicular magnetic anisotropy (PMA) is promising for energy efficient spintronic devices. Here, we studied the SOT induced magnetic switching in perpendicular W/Co₂₀Fe₆₀B₂₀/MgO structures. We demonstrated the critical current density for the SOT induced switching is as low as 1.15 × 10⁶ A cm^-2 in the presence of an in-plane magnetic field, which is very energy efficient in terms of magnetic switching. We attribute this ultra-efficient magnetic switching to the high spin Hall angle of the W layer and the ultra-low domain wall pinning field of the CoFeB. The SOT induced switching procedure was directly observed by a high-resolution Kerr microscopy. Furthermore, the weak Dzyaloshinsky-Moriya interactions are shown to be favorable for switching. Our experiments physically explained the ultra-efficient SOT induced magnetic switching in W/CoFeB/MgO structures, and direct observation of the switching procedure can improve the comprehensive understanding of this dynamic process and further promote the study of SOT based memory devices.

Symmetry-breaking interlayer Dzyaloshinskii-Moriya interactions in synthetic antiferromagnets

The magnetic interfacial Dzyaloshinskii-Moriya interaction (DMI) in multilayered thin films can lead to chiral spin states, which are of paramount importance for future spintronic technologies^1,2. Interfacial DMI typically manifests as an intralayer interaction, mediated via a paramagnetic heavy metal in systems lacking inversion symmetry³. Here we show that, by designing synthetic antiferromagnets with canted magnetization states^4,5, it is also possible to observe direct evidence of the interfacial interlayer DMI at room temperature. The interlayer DMI breaks the symmetry of the magnetic reversal process via the emergence of non-collinear spin states, which results in chiral exchange-biased hysteresis loops. The spin chiral interlayer interactions reported here are expected to manifest in a range of multilayered thin-film systems, opening up as yet unexplored avenues for the development and exploitation of chiral effects in magnetic heterostructures^6-8.