Giant orbital Hall effect in transition metals: origin of large spin and anomalous Hall effects

Active ballistic orbital transport in Ni/Pt heterostructure

Orbital current, defined as the orbital character of Bloch states in solids, can travel with larger coherence length through a broader range of materials than its spin counterpart, facilitating a robust, higher density and energy efficient information transmission. Hence, active control of orbital transport plays a pivotal role in the progress of the evolving field of quantum information technology. Unlike spin angular momentum, orbital angular momentum couples to phonon angular momentum efficiently via orbital-crystal momentum (L-k) coupling, allowing us to control orbital transport through crystal field potential mediated angular momentum transfer. Here, leveraging the orbital dependant efficient L-k coupling, we have experimentally demonstrated the active control of orbital current velocity in Ni/Pt heterostructure. We observe terahertz emission from Ni/Pt heterostructure via long-range ballistic orbital transport, as evidenced by the delay, and chirping in the emitted THz pulse correlating with increased Pt thickness. Additionally, we also have identified a critical energy density required to overcome collisions in orbital transport, enabling a swifter flow of orbital current. Femtosecond light driven active control of the ballistic orbital transport lays the foundation for the development of dynamic optorbitronics for transmitting information over extended distance.

Floquet engineering of the orbital Hall effect and valleytronics in two-dimensional topological magnets

We show that circularly polarized light is a versatile way to manipulate both the orbital Hall effect and band topology in two-dimensional ferromagnets. Employing the hexagonal lattice, we proposed that interactions between light and matter allow for the modulation of the valley polarization effect, and then band inversions, accompanied by the band gap closing and reopening processes, can be achieved subsequently at two valleys. Remarkably, the distribution of orbital angular momentum can be controlled by the band inversions, leading to the Floquet engineering of the orbital Hall effect, as well as the topological phase transition from a second-order topological insulator to a Chern insulator with in-plane magnetization, and then to a normal insulator. Furthermore, first-principles calculations validate the feasibility with the 2H-ScI2 monolayer as a candidate material, paving a technological avenue to bridge the orbitronics and nontrivial topology using Floquet engineering.

Magnon Orbital Nernst Effect in Honeycomb Antiferromagnets without Spin-Orbit Coupling

Recently, topological responses of magnons have emerged as a central theme in magnetism and spintronics. However, resulting Hall responses are typically weak and infrequent, since, according to present understanding, they arise from effective spin-orbit couplings, which are weaker compared to the exchange energy. Here, by investigating transport properties of magnon orbital moments, we predict that the magnon orbital Nernst effect is an intrinsic characteristic of the honeycomb antiferromagnet and therefore, it manifests even in the absence of spin-orbit coupling. For the electric detection, we propose an experimental scheme based on the magnetoelectric effect. Our results break the conventional wisdom that the Hall transport of magnons requires spin-orbit coupling by predicting the magnon orbital Nernst effect in a system without it, which leads us to envision that our work initiates the intensive search for various magnon Hall effects in generic magnetic systems with no reliance on spin-orbit coupling.

Dominance of Extrinsic Scattering Mechanisms in the Orbital Hall Effect: Graphene, Transition Metal Dichalcogenides, and Topological Antiferromagnets

The theory of the orbital Hall effect (OHE), a transverse flow of orbital angular momentum (OAM) in response to an electric field, has concentrated on intrinsic mechanisms. Here, using a quantum kinetic formulation, we determine the full OHE in the presence of short-range disorder using 2D massive Dirac fermions as a prototype. We find that, in doped systems, extrinsic effects associated with the Fermi surface (skew scattering and side jump) provide ≈95% of the OHE. This suggests that, at experimentally relevant transport densities, the OHE is primarily extrinsic.

Topology-Engineered Orbital Hall Effect in Two-Dimensional Ferromagnets

Recent advances in the manipulation of the orbital angular momentum (OAM) within the paradigm of orbitronics presents a promising avenue for the design of future electronic devices. In this context, the recently observed orbital Hall effect (OHE) occupies a special place. Here, focusing on both the second-order topological and quantum anomalous Hall insulators in two-dimensional ferromagnets, we demonstrate that topological phase transitions present an efficient and straightforward way to engineer the OHE, where the OAM distribution can be controlled by the nature of the band inversion. Using first-principles calculations, we identify Janus RuBrCl and three septuple layers of MnBi2Te4 as experimentally feasible examples of the proposed mechanism of OHE engineering by topology. With our work, we open up new possibilities for innovative applications in topological spintronics and orbitronics.

Orbitronics: light-induced orbital currents in Ni studied by terahertz emission experiments

Orbitronics is based on the use of orbital currents as information carriers. Orbital currents can be generated from the conversion of charge or spin currents, and inversely, they could be converted back to charge or spin currents. Here we demonstrate that orbital currents can also be generated by femtosecond light pulses on Ni. In multilayers associating Ni with oxides and nonmagnetic metals such as Cu, we detect the orbital currents by their conversion into charge currents and the resulting terahertz emission. We show that the orbital currents extraordinarily predominate the light-induced spin currents in Ni-based systems, whereas only spin currents can be detected with CoFeB-based systems. In addition, the analysis of the time delays of the terahertz pulses leads to relevant information on the velocity and propagation length of orbital carriers. Our finding of light-induced orbital currents and our observation of their conversion into charge currents opens new avenues in orbitronics, including the development of orbitronic terahertz devices.

Orbital Rashba Effect as a Platform for Robust Orbital Photocurrents

Orbital current has emerged over the past years as one of the key novel concepts in magnetotransport. Here, we demonstrate that laser pulses can be used to generate large and robust nonrelativistic orbital currents in systems where the inversion symmetry is broken by the orbital Rashba effect. By referring to model and first principles tools, we demonstrate that orbital Rashba effect, accompanied by crystal field splitting, can mediate robust orbital photocurrents without a need for spin-orbit interaction even in metallic systems. We show that such nonrelativistic orbital photocurrents are translated into derivative photocurrents of spin when relativistic effects are taken into account. We thus promote orbital photocurrents as a promising platform for optical generation of currents of angular momentum, and discuss their possible applications.

Effective electrical manipulation of a topological antiferromagnet by orbital torques

The electrical control of the non-trivial topology in Weyl antiferromagnets is of great interest for the development of next-generation spintronic devices. Recent studies suggest that the spin Hall effect can switch the topological antiferromagnetic order. However, the switching efficiency remains relatively low. Here, we demonstrate the effective manipulation of antiferromagnetic order in the Weyl semimetal Mn3Sn using orbital torques originating from either metal Mn or oxide CuOx. Although Mn3Sn can convert orbital current to spin current on its own, we find that inserting a heavy metal layer, such as Pt, of appropriate thickness can effectively reduce the critical switching current density by one order of magnitude. In addition, we show that the memristor-like switching behaviour of Mn3Sn can mimic the potentiation and depression processes of a synapse with high linearity-which may be beneficial for constructing accurate artificial neural networks. Our work paves a way for manipulating the topological antiferromagnetic order and may inspire more high-performance antiferromagnetic functional devices.

Charge-loop current order and Z3 nematicity mediated by bond order fluctuations in kagome metals

Recent experiments on geometrically frustrated kagome metal AV3Sb5 (A = K, Rb, Cs) have revealed the emergence of the charge loop current (cLC) order near the bond order (BO) phase. However, the origin of the cLC and its interplay with other phases have been uncovered. Here, we propose a novel mechanism of the cLC state, by focusing on the BO phase common in kagome metals. The BO fluctuations in kagome metals, which emerges due to the Coulomb interaction and the electron-phonon coupling, mediate the odd-parity particle-hole condensation that gives rise to the topological current order. Furthermore, the predicted cLC+BO phase gives rise to the Z3-nematic state in addition to the giant anomalous Hall effect. The present theory predicts the close relationship between the cLC, the BO, and the nematicity, which is significant to understand the cascade of quantum electron states in kagome metals. The present scenario provides a natural understanding.

Efficient Noncollinear Antiferromagnetic State Switching Induced by the Orbital Hall Effect in Chromium

Recently, orbital Hall current has attracted attention as an alternative method to switch the magnetization of ferromagnets. Here we present our findings on electrical switching of the antiferromagnetic state in Mn3Sn/Cr, where despite the much smaller spin Hall angle of Cr, the switching current density is comparable to heavy metal-based heterostructures. However, the inverse process, i.e., spin-to-charge conversion in Cr-based heterostructures, is much less efficient than the Pt-based equivalents, as manifested in the 1 order of magnitude smaller terahertz emission intensity and spin current-induced magnetoresistance. These results in combination with the slow decay of terahertz emission against Cr thickness (diffusion length of ∼11 nm) suggest that the observed magnetic switching can be attributed to orbital current generation in Cr, followed by efficient conversion to spin current. Our work demonstrates the potential of light metals like Cr as efficient orbital/spin current sources for antiferromagnetic spintronics.

Evolution of local edge state braiding and spin topological transport characterization of Te-doped monolayer 1T'-MoS2

We conducted first-principles calculations to investigate the dynamic braiding of local edge states and the spin topological transport mechanism in a strong topological MoS1.75Te0.25 matrix. The presence of type-II Van Hove singularity in the middle of the X-S path indicates a strong cohesive interaction and a paring condensation mechanism within the matrix. The surface state data of MoS1.75Te0.25 clearly demonstrate the characteristic features of strong regular loop braiding in spin transport. The spin Hall conductivity of the matrix was determined from the anisotropic characteristics of the spin Berry curvature. The phase transition of the spin Hall conductivity was evidenced by the positive sign of local spin polarization strength, primarily contributed by the dz2 orbital of Mo atoms, and the negative sign of spin polarization strength, mainly contributed by the p-px orbitals of S atoms. Moreover, the inclusion of Te selectively tuned the spin transport efficiency of the dz2 and px orbitals. Comprehensive braiding and readout of edge states can be achieved using an artificially designed MoS1.75Te0.25 spintronic device. This 2D fractional braiding holds significant potential for applications in topological quantum computation.

Magneto-Optical Detection of the Orbital Hall Effect in Chromium

The orbital Hall effect has been theoretically predicted but its direct observation is a challenge. Here, we report the magneto-optical detection of current-induced orbital accumulation at the surface of a light 3d transition metal, Cr. The orbital polarization is in-plane, transverse to the current direction, and scales linearly with current density, consistent with the orbital Hall effect. Comparing the thickness-dependent magneto-optical measurements with ab initio calculations, we estimate an orbital diffusion length in Cr of 6.6±0.6  nm.

Giant Orbital-to-Spin Conversion for Efficient Current-Induced Magnetization Switching of Ferrimagnetic Insulator

It has long been believed that the attachment of two heavy metals such as Ta and Pt with opposite spin Hall angles results in a weakened net torque generation efficiency in magnetization switching devices. Here, we report a giant orbital-to-spin conversion in Ta/Pt/Tm3Fe5O12 (TmIG) heterostructures. We show that the torque generation efficiency is enhanced by an order of magnitude in the Ta/Pt/TmIG trilayer compared to that in the Pt/TmIG bilayer. This enhancement is further evidenced by the fact that the critical current density for the magnetization switching of the Ta/Pt/TmIG is an order of magnitude smaller than that of the Pt/TmIG. It is found that the orbital current generated from Ta through the orbital Hall effect (OHE) is converted to the spin current in the interior of Pt. Our discovery offers an extraordinary approach to enhance the torque generation for magnetization switching of insulators and provides an important piece of information for orbitronics.

Observation of the orbital Hall effect in a light metal Ti

The orbital Hall effect¹ refers to the generation of electron orbital angular momentum flow transverse to an external electric field. Contrary to the common belief that the orbital angular momentum is quenched in solids, theoretical studies^2,3 predict that the orbital Hall effect can be strong and is a fundamental origin of the spin Hall effect^4-7 in many transition metals. Despite the growing circumstantial evidence^8-11, its direct detection remains elusive. Here we report the magneto-optical observation of the orbital Hall effect in the light metal titanium (Ti). The Kerr rotation by the orbital magnetic moment accumulated at Ti surfaces owing to the orbital Hall current is measured, and the result agrees with theoretical calculations semi-quantitatively and is supported by the orbital torque¹² measurement in Ti-based magnetic heterostructures. This result confirms the orbital Hall effect and indicates that the orbital angular momentum is an important dynamic degree of freedom in solids. Moreover, this calls for renewed studies of the orbital effect on other degrees of freedom such as spin^2,3,13,14, valley^15,16, phonon^17-19 and magnon^20,21 dynamics.

Long-Range Orbital Torque by Momentum-Space Hotspots

While it is often assumed that the orbital response is suppressed and short ranged due to strong crystal field potential and orbital quenching, we show that the orbital response can be remarkably long ranged in ferromagnets. In a bilayer consisting of a nonmagnet and a ferromagnet, spin injection from the interface results in spin accumulation and torque in the ferromagnet, which rapidly oscillate and decay by spin dephasing. In contrast, even when an external electric field is applied only on the nonmagnet, we find substantially long-ranged induced orbital angular momentum in the ferromagnet, which can go far beyond the spin dephasing length. This unusual feature is attributed to nearly degenerate orbital characters imposed by the crystal symmetry, which form hotspots for the intrinsic orbital response. Because only the states near the hotspots contribute dominantly, the induced orbital angular momentum does not exhibit destructive interference among states with different momentum as in the case of the spin dephasing. This gives rise to a distinct type of orbital torque on the magnetization, increasing with the thickness of the ferromagnet. Such behavior may serve as critical long-sought evidence of orbital transport to be directly tested in experiments. Our findings open the possibility of using long-range orbital response in orbitronic device applications.

Orbital Dynamics in Centrosymmetric Systems

Orbital dynamics in time-reversal-symmetric centrosymmetric systems is examined theoretically. Contrary to common belief, we demonstrate that many aspects of orbital dynamics are qualitatively different from spin dynamics because the algebraic properties of the orbital and spin angular momentum operators are different. This difference generates interesting orbital responses, which do not have spin counterparts. For instance, the orbital angular momentum expectation values may oscillate even without breaking neither the time-reversal nor the inversion symmetry. Our quantum Boltzmann approach reproduces the previous result on the orbital Hall effect and reveals additional orbital dynamics phenomena, whose detection schemes are discussed briefly. Our work will be useful for the experimental differentiation of the orbital dynamics from the spin dynamics.

Recent developments on the magnetic and electrical transport properties of FeRh- and Rh-based heterostructures

It is fascinating how the binary alloy FeRh has been the subject of a vast number of studies almost solely for a single-phase transition. This is, however, reasonable, considering how various degrees of freedom are intertwined around this phase transition. Furthermore, the tunability of this phase transition-the large response to tuning parameters, such as electric field and strain-endows FeRh huge potential in applications. Compared to the bulk counterpart, FeRh in the thin-film form is superior in many aspects: materials in thin-film form are often more technologically relevant in the first place; in addition, the substrates add extra dimensions to the tunability, especially when the substrate itself is multiferroic. Here we review recent developments on the magnetic and transport properties of heterostructures based on FeRh and its end-member Rh, with the latter providing a new route to exploiting spin-orbit interactions in functional spintronic heterostructures other than the more often employed 5dmetals. The methods utilized in the investigation of the physical properties in these systems, and the design principles employed in the engineering thereof may conceivably be extended to similar phase transitions to other magnetic materials.

Orbital torque in magnetic bilayers

The orbital Hall effect describes the generation of the orbital current flowing in a perpendicular direction to an external electric field, analogous to the spin Hall effect. As the orbital current carries the angular momentum as the spin current does, injection of the orbital current into a ferromagnet can result in torque on the magnetization, which provides a way to detect the orbital Hall effect. With this motivation, we examine the current-induced spin-orbit torques in various ferromagnet/heavy metal bilayers by theory and experiment. Analysis of the magnetic torque reveals the presence of the contribution from the orbital Hall effect in the heavy metal, which competes with the contribution from the spin Hall effect. In particular, we find that the net torque in Ni/Ta bilayers is opposite in sign to the spin Hall theory prediction but instead consistent with the orbital Hall theory, which unambiguously confirms the orbital torque generated by the orbital Hall effect. Our finding opens a possibility of utilizing the orbital current for spintronic device applications, and it will invigorate researches on spin-orbit-coupled phenomena based on orbital engineering.

Spin-orbit torques in normal metal/Nb/ferromagnet heterostructures

Quantifying the spin–orbit torque (SOT) efficiency with changing the layer thickness is crucial for understanding the physical background of SOT. This study investigates the Nb-thickness-dependent SOT efficiency of two types of layered heterostructures: Ta/Nb/CoFeB and Pt/Nb/CoFeB. We find that the Nb thickness dependence of the SOT efficiency in the two samples is quite different. In the Pt/Nb series, the SOT sign changes according to the thickness variation because Pt and Nb have different spin–orbit coupling signs. We observe the resulting reversal in switching polarity through current-induced SOT switching experiments. However, due to the same spin–orbit coupling signs of Ta and Nb, no such polarity reversal was observed in Ta/Nb series. Further, we extract the spin diffusion length of Nb in each heterostructure. These results provide a systematic understanding of the material- and thickness-dependent SOT characteristics.

Rashba Effect in Functional Spintronic Devices

Exploiting spin transport increases the functionality of electronic devices and enables such devices to overcome physical limitations related to speed and power. Utilizing the Rashba effect at the interface of heterostructures provides promising opportunities toward the development of high-performance devices because it enables electrical control of the spin information. Herein, the focus is mainly on progress related to the two most compelling devices that exploit the Rashba effect: spin transistors and spin-orbit torque devices. For spin field-effect transistors, the gate-voltage manipulation of the Rashba effect and subsequent control of the spin precession are discussed, including for all-electric spin field-effect transistors. For spin-orbit torque devices, recent theories and experiments on interface-generated spin current are discussed. The future directions of manipulating the Rashba effect to realize fully integrated spin logic and memory devices are also discussed.

Interfacial spin-orbit torques

Spin-orbit torques offer a promising mechanism for electrically controlling magnetization dynamics in nanoscale heterostructures. While spin-orbit torques occur predominately at interfaces, the physical mechanisms underlying these torques can originate in both the bulk layers and at interfaces. Classifying spin-orbit torques based on the region that they originate in provides clues as to how to optimize the effect. While most bulk spin-orbit torque contributions are well studied, many of the interfacial contributions allowed by symmetry have yet to be fully explored theoretically and experimentally. To facilitate progress, we review interfacial spin-orbit torques from a semiclassical viewpoint and relate these contributions to recent experimental results. Within the same model, we show the relationship between different interface transport parameters. For charges and spins flowing perpendicular to the interface, interfacial spin-orbit coupling both modifies the mixing conductance of magnetoelectronic circuit theory and gives rise to spin memory loss. For in-plane electric fields, interfacial spin-orbit coupling gives rise to torques described by spin-orbit filtering, spin swapping and precession. In addition, these same interfacial processes generate spin currents that flow into the non-magnetic layer. For in-plane electric fields in trilayer structures, the spin currents generated at the interface between one ferromagnetic layer and the non-magnetic spacer layer can propagate through the non-magnetic layer to produce novel torques on the other ferromagnetic layer.

Optical spin-orbit torque in heavy metal-ferromagnet heterostructures

Spin current generation through the spin-orbit interaction in non-magnetic materials lies at the heart of spintronics. When the generated spin current is injected to a ferromagnet, it produces spin-orbit torque and manipulates magnetization efficiently. Optically generated spin currents are expected to be superior to their electrical counterparts in terms of the manipulation speed. Here we report optical spin-orbit torques in heavy metal/ferromagnet heterostructures. The strong spin-orbit coupling of heavy metals induces photo-excited carriers to be spin-polarized, and their transport from heavy metals to ferromagnets induces a torque on magnetization. Our results demonstrate that heavy metals can generate spin-orbit torque not only electrically but also optically.

It is known that torques can be exerted on spins in a ferromagnet (FM) layer when an in-plane electric current is injected into a heavy metal (HM) layer in contact with the FM layer. Here, the authors demonstrate that torques can be generated without the current injection by shining instead circularly polarized light on the HM.

Theory of Current-Induced Angular Momentum Transfer Dynamics in Spin-Orbit Coupled Systems

Motivated by the importance of understanding various competing mechanisms to the current-induced spin-orbit torque on magnetization in complex magnets, we develop a theory of current-induced spin-orbital coupled dynamics in magnetic heterostructures. The theory describes angular momentum transfer between different degrees of freedom in solids, e.g., the electron orbital and spin, the crystal lattice, and the magnetic order parameter. Based on the continuity equations for the spin and orbital angular momenta, we derive equations of motion that relate spin and orbital current fluxes and torques describing the transfer of angular momentum between different degrees of freedom, achieved in a steady state under an applied external electric field. We then propose a classification scheme for the mechanisms of the current-induced torque in magnetic bilayers. We evaluate the sources of torque using density functional theory, effectively capturing the impact of the electronic structure on these quantities. We apply our formalism to two different magnetic bilayers, Fe/W(110) and Ni/W(110), which are chosen such that the orbital and spin Hall effects in W have opposite sign and the resulting spin- and orbital-mediated torques can compete with each other. We find that while the spin torque arising from the spin Hall effect of W is the dominant mechanism of the current-induced torque in Fe/W(110), the dominant mechanism in Ni/W(110) is the orbital torque originating in the orbital Hall effect of the non-magnetic substrate. Thus the effective spin Hall angles for the total torque are negative and positive in the two systems. Our prediction can be experimentally identified in moderately clean samples, where intrinsic contributions dominate. This clearly demonstrates that our formalism is ideal for studying the angular momentum transfer dynamics in spin-orbit coupled systems as it goes beyond the "spin current picture" by naturally incorporating the spin and orbital degrees of freedom on an equal footing. Our calculations reveal that, in addition to the spin and orbital torque, other contributions such as the interfacial torque and self-induced anomalous torque within the ferromagnet are not negligible in both material systems.

Optically Controlled Orbitronics on a Triangular Lattice

The propagation of electrons in an orbital multiplet dispersing on a lattice can support anomalous transport phenomena deriving from an orbitally induced Berry curvature. In striking contrast to the related situation in graphene, we find that anomalous transport for an L=1 multiplet on the primitive 2D triangular lattice is activated by easily implemented on site and optically tunable potentials. We demonstrate this for dynamics in a Bloch band where point degeneracies carrying opposite winding numbers are generically offset in energy, allowing both an anomalous charge Hall conductance with the sign selected by off-resonance coupling to circularly polarized light and a related anomalous orbital Hall conductance activated by layer buckling.

Orbital Pseudospin-Momentum Locking in Two-Dimensional Chiral Borophene

Recently, orbital-textures have been found in Rashba and topological insulator (TI) surface states as a result of the spin-orbit coupling (SOC). Here, we predict a p_x/p_y orbital texture, in linear dispersive Dirac bands, arising at the K/K' points of χ-h₀ borophene chiral monolayer. Combining "first-principles" calculations with effective Hamiltonians, we show that the orbital pseudospin has its direction locked with the momentum in a similar way as TIs' spin-textures. Additionally, considering a layer pseudospin degree of freedom, this lattice allows stackings of layers with equivalent or opposite chiralities. In turn, we show a control of the orbital textures and layer localization through the designed stacking and external electric field. For instance, for the opposite chirality stacking, the electric field allows for an on/off switch of the orbital-textured Dirac cone.

Intrinsic Spin and Orbital Hall Effects from Orbital Texture

We show theoretically that both the intrinsic spin Hall effect (SHE) and orbital Hall effect (OHE) can arise in centrosymmetric systems through momentum-space orbital texture, which is ubiquitous even in centrosymmetric systems unlike spin texture. The OHE occurs even without spin-orbit coupling (SOC) and is converted into the SHE through SOC. The resulting spin Hall conductivity is large (comparable to that of Pt) but depends on the SOC strength in a nonmonotonic way. This mechanism is stable against orbital quenching. This work suggests a path for an ongoing search for materials with stronger SHE. It also calls for experimental efforts to probe orbital degrees of freedom in the OHE and SHE. Possible ways for experimental detection are briefly discussed.

Tunable inverse spin Hall effect in nanometer-thick platinum films by ionic gating

Electric gating can strongly modulate a wide variety of physical properties in semiconductors and insulators, such as significant changes of conductivity in silicon, appearance of superconductivity in SrTiO₃, the paramagnet–ferromagnet transition in (In,Mn)As, and so on. The key to such modulation is charge accumulation in solids. Thus, it has been believed that such modulation is out of reach for conventional metals where the number of carriers is too large. However, success in tuning the Curie temperature of ultrathin cobalt gave hope of finally achieving such a degree of control even in metallic materials. Here, we show reversible modulation of up to two orders of magnitude of the inverse spin Hall effect—a phenomenon that governs interconversion between spin and charge currents—in ultrathin platinum. Spin-to-charge conversion enables the generation and use of electric and spin currents in the same device, which is crucial for the future of spintronics and electronics.

The ability to electrically control spintronic materials significantly widens their potential for integration into devices, but it is difficult to achieve in metals with high carrier densities. Here the authors demonstrate ionic liquid gated control of the inverse spin Hall effect in platinum.

Layer thickness dependence of the terahertz emission based on spin current in ferromagnetic heterostructures

The emission with a bandwidth of 1.5 terahertz based on the spin current in the ferromagnetic heterostructure Co/Pt is demonstrated. The spin transient launched by the NIR femtosecond laser pulse in the Co/Pt is converted into the in-plane charge current due to the inverse spin Hall effect, which gives rise to the terahertz emission towards free space. The dependence of the terahertz emission on the Pt-layer thickness is investigated. To optimize the geometry structure of the new type of emitter, we developed the theoretical model by carefully analyzing the spin transport. Our model reveals the importance to take into account the interfacial spin loss. It can be used to analyze more complex heterostructures.

Theory of Large Intrinsic Spin Hall Effect in Iridate Semimetals

We theoretically investigate the mechanism to generate large intrinsic spin Hall effect in iridates or more broadly in 5d transition metal oxides with strong spin-orbit coupling. We demonstrate such a possibility by taking the example of orthorhombic perovskite iridate with nonsymmorphic lattice symmetry, SrIrO₃, which is a three-dimensional semimetal with nodal line spectrum. It is shown that large intrinsic spin Hall effect arises in this system via the spin-Berry curvature originating from the nearly degenerate electronic spectra surrounding the nodal line. This effect exists even when the nodal line is gently gapped out, due to the persistent nearly degenerate electronic structure. The magnitude of the spin Hall conductivity is shown to be comparable to the best known example such as doped topological insulators and the biggest in any transition metal oxides. To gain further insight, we compute the intrinsic spin Hall conductivity in both bulk and thin film systems. We find that the geometric confinement in thin films leads to significant modifications of the electronic states, leading to even bigger spin Hall conductivity in certain cases. We compare our findings with the recent experimental report on the discovery of large spin Hall effect in SrIrO₃ thin films.

Evidence for Dyakonov-Perel-like Spin Relaxation in Pt

We utilize nanoscale spin valves with Pt spacer layers to characterize spin relaxation in Pt. Analysis of the spin lifetime indicates that Elliott-Yafet spin scattering is dominant at room temperature, but an unexpected intrinsic Dyakonov-Perel-like spin relaxation becomes dominant at cryogenic temperatures. We also observe suppression of spin relaxation in a Pt layer interfaced with a ferromagnet, likely caused by the competition between the effective exchange and spin-orbit fields.

Toward surface orbitronics: giant orbital magnetism from the orbital Rashba effect at the surface of sp-metals

As the inversion symmetry is broken at a surface, spin-orbit interaction gives rise to spin-dependent energy shifts - a phenomenon which is known as the spin Rashba effect. Recently, it has been recognized that an orbital counterpart of the spin Rashba effect - the orbital Rashba effect - can be realized at surfaces even without spin-orbit coupling. Here, we propose a mechanism for the orbital Rashba effect based on sp orbital hybridization, which ultimately leads to the electric polarization of surface states. For the experimentally well-studied system of a BiAg₂ monolayer, as a proof of principle, we show from first principles that this effect leads to chiral orbital textures in k-space. In predicting the magnitude of the orbital moment arising from the orbital Rashba effect, we demonstrate the crucial role played by the Berry phase theory for the magnitude and variation of the orbital textures. As a result, we predict a pronounced manifestation of various orbital effects at surfaces, and proclaim the orbital Rashba effect to be a key platform for surface orbitronics.

Phase-sensitive detection of spin pumping via the ac inverse spin Hall effect

We use a phase-sensitive, quantitative technique to separate inductive and ac inverse spin Hall effect (ISHE) voltages observed in Ni(81)Fe(19)/normal metal multilayers under the condition of ferromagnetic resonance. For Ni(81)Fe(19)/Pt thin film bilayers and at microwave frequencies from 7 to 20 GHz, we observe an ac ISHE magnitude that is much larger than that expected from the dc spin Hall angle Θ(SH)(Pt) = 0.1. Furthermore, at these frequencies, we find an unexpected, ≈ 110° phase of the ac ISHE signal relative to the in-plane component of the resonant magnetization precession. We attribute our findings to a dominant intrinsic ac ISHE in Pt.

Current-induced spin polarization on metal surfaces probed by spin-polarized positron beam

Current-induced spin polarization (CISP) on the outermost surfaces of Au, Cu, Pt, Pd, Ta, and W nanoscaled films were studied using a spin-polarized positron beam. The Au and Cu surfaces showed no significant CISP. In contrast, the Pt, Pd, Ta, and W films exhibited large CISP (3~15% per input charge current of 10⁵ A/cm²) and the CISP of Ta and W were opposite to those of Pt and Pd. The sign of the CISP obeys the same rule in spin Hall effect suggesting that the spin-orbit coupling is mainly responsible for the CISP. The magnitude of the CISP is explained by the Rashba-Edelstein mechanism rather than the diffusive spin Hall effect. This settles a controversy, that which of these two mechanisms dominates the large CISP on metal surfaces.

Extrinsic spin Hall effect induced by iridium impurities in copper

We study the extrinsic spin Hall effect induced by Ir impurities in Cu by injecting a pure spin current into a CuIr wire from a lateral spin valve structure. While no spin Hall effect is observed without Ir impurity, the spin Hall resistivity of CuIr increases linearly with the impurity concentration. The spin Hall angle of CuIr, (2.1±0.6)% throughout the concentration range between 1% and 12%, is practically independent of temperature. These results represent a clear example of predominant skew scattering extrinsic contribution to the spin Hall effect in a nonmagnetic alloy.

Anisotropic spin Hall effect from first principles

We report on first principles calculations of the anisotropy of the intrinsic spin Hall conductivity (SHC) in nonmagnetic hcp metals and in antiferromagnetic Cr. For most of the metals of this study we find large anisotropies. We derive the general relation between the SHC vector and the direction of spin polarization and discuss its consequences for hcp metals. Especially, it is predicted that for systems where the SHC changes sign due to the anisotropy the spin Hall effect may be tuned such that the spin polarization is parallel either to the electric field or to the spin current.

Intrinsic spin Hall Effect in the s-wave superconducting state: analysis of the Rashba model

A general expression for spin Hall conductivity (SHC) in the s-wave superconducting state at finite temperatures is derived. Based on the expression, we study SHC in a two-dimensional electron gas model in the presence of Rashba spin-orbit interaction (SOI). SHC is zero in the normal state, whereas it takes a large negative value as soon as the superconductivity occurs, due to the change in the quasiparticle contributions. Since this remarkable behavior is independent of the strength of the SOI, it will be widely observed in thin films of superconductors with surface-induced Rashba SOI, or in various noncentrosymmetric superconductors.