Three-dimensional electron realm in VSe2 by soft-x-ray photoelectron spectroscopy: origin of charge-density waves

Tunable Optical Properties of Cu/VSe2 from the Visible to Terahertz Spectral Range: A First-Principles Study

In this study, Density Functional Theory (DFT) and Density Functional Tight-Binding (DFTB) calculations were used to study two different interfaces of Cu/VSe2 as well as four nanodiodes of VSe2 bulk including/excluding the Cu layer. We calculated the electronic and optical properties of two systems of two Cu/VSe2 in which Cu atoms are positioned on the top and at the corner of the VSe2 monolayer lattice. The electronic band structure calculations revealed that the metallic properties of the VSe2 monolayer did not change with the interface of Cu atoms; however, the peak around the Fermi level (EF) in Cu/VSe2(Top) shifted downward to lower energies. The optical properties showed that in the visible range and the wavelengths related to the interband transition/intraband excitation of Cu atoms, the enhancement of Re(ω) values could be observed for both Cu/VSe2(Top) and Cu/VSe2(Corner) nanostructures, while in infrared/terahertz ranges, less/more negative values of Re(ω) were predicted. Through the effect of Cu atoms on the VSe2 monolayer, the intensity of the peaks in the Im(ω) part of the dielectric constant was increased from 0.2 THz for Cu@VSe2(Top) and 2.9 THz for Cu@VSe2(Corner) instead of the zero constant line in the pure system of VSe2. Refractive index (n) calculations indicated the higher indices at 5.4 and 4.6 for Cu/VSe2(Top) and Cu@VSe2(Corner), respectively, in comparison to the value of 2.9 for VSe2. Finally, DFTB calculations predicted higher current values from I(V) characteristic curves of Au/Cu/VSe2/Au and Ag/Cu/VSe2/Ag nanodiodes concerning two other devices without the presence of the Cu layer.

Doping Tunable CDW Phase Transition in Bulk 1T-ZrSe2

Tunable electronic properties in transition metal dichalcogenides (TMDs) are essential to further their use in device applications. Here, we present a comprehensive scanning tunneling microscopy and spectroscopy study of a doping-induced charge density wave (CDW) in semiconducting bulk 1T-ZrSe2. We find that atomic impurities that locally shift the Fermi level (EF) into the conduction band trigger a CDW reconstruction concomitantly to the opening of a gap at EF. Our findings shed new light on earlier photoemission spectroscopy and theoretical studies of bulk 1T-ZrSe2 and provide local insight into the electron-doping-mediated CDW transition observed in semiconducting TMDs.

Evolution of the Fermi Surface of 1T-VSe2 across a Structural Phase Transition

Periodic lattice distortion, known as the charge density wave, is generally attributed to electron-phonon coupling. This correlation is expected to induce a pseudogap at the Fermi level in order to gain the required energy for stable lattice distortion. The transition metal dichalcogenide 1T-VSe2 also undergoes such a transition at 110 K. Here, we present detailed angle-resolved photoemission spectroscopy experiments to investigate the electronic structure in 1T-VSe2 across the structural transition. Previously reported warping of the electronic structure and the energy shift of a secondary peak near the Fermi level as the origin of the charge density wave phase are shown to be temperature independent and hence cannot be attributed to the structural transition. Our work reveals new states that were not resolved in previous studies. Earlier results can be explained by the different dispersion natures of these states and temperature-induced broadening. Only the overall size of the Fermi surface is found to change across the structural transition. These observations, quite different from the charge density wave scenario commonly considered for 1T-VSe2 and other transition metal dichalcogenides, bring fresh perspectives toward correctly describing structural transitions. Therefore, these new results can be applied to material families in which the origin of the structural transition has not been resolved.

Giant Room-Temperature Topological Hall Effect in a Square-Net Ferromagnet LaMn2Ge2

A topological magnetic material showcases a multitude of intriguing properties resulting from the compelling interplay between topology and magnetism. These include notable phenomena such as a large anomalous Nernst effect (ANE), an anomalous Hall effect (AHE), and a topological Hall effect (THE). In most cases, topological transport phenomena are prevalent at temperatures considerably lower than room temperature, presenting a challenge for practical applications. However, the noncollinear ferromagnetic (FM) LaMn2Ge2, characterized by a Mn square-net lattice and a notably high Curie temperature (TC) of approximately 325 K, defies this trend as a topological semimetal. This work observes a giant topological Hall resistivity,ρ y x T $\rho _{yx}^T$ , of ≈4.5 µΩ cm at room temperature when the angle between the applied field and the c-axis is 75°, which is significantly higher than state-of-the-art materials with noncoplanar spin structures. The single crystal neutron diffraction measurements agree with an incommensurate conical magnetic structure as the ground state. This observation suggests the enhanced spin chirality resulting from the noncoplanar spin configuration when the applied field is away from the magnetic easy axis as the origin of a large contribution to the observed THE. The findings unequivocally demonstrate that the FM LaMn2Ge2 holds great promise as a potential topological semimetal for spintronic applications even at room temperature.

Strain-Induced Ferromagnetism in Monolayer T″-Phase VTe2: Unveiling Magnetic States and Anisotropy for Spintronics Advancement

Two-dimensional (2D) ferromagnets have attracted significant interest for their potential in spintronic device miniaturization, especially since the discovery of ferromagnetic ordering in monolayer materials such as CrI3 and Fe3GeTe2 in 2017. This study presents a detailed investigation into the effects of the Hubbard U parameter, biaxial strain, and structural distortions on the magnetic characteristics of T″-phase VTe2. We demonstrate that setting the Hubbard U to 0 eV provides an accurate representation of the observed structural, magnetic, and electronic features for both bulk and monolayer T″-phase VTe2. The application of strain reveals two distinct ferromagnetic states in the monolayer T″-phase VTe2, each characterized by minor structural differences, but notably different magnetic moments. The T″-1 state, with reduced magnetic moments, emerges under compressive strain, while the T″-2 state, featuring increased magnetic moments, develops under tensile strain. Our analysis also compares the magnetic anisotropy between the T and T″ phases of VTe2, highlighting that the periodic lattice distortion in the T″-phase induces an in-plane anisotropy, which makes it a material with an easy-axis of magnetization. Monte Carlo simulations corroborate our findings, indicating a high Curie temperature of approximately 191 K for the T″-phase VTe2. Our research not only sheds light on the critical aspects of the VTe2 system but also suggests new pathways for enhancing low-dimensional magnetism, contributing to the advancement of spintronics and straintronics.

Charge density waves in two-dimensional transition metal dichalcogenides

Charge density wave (CDW is one of the most ubiquitous electronic orders in quantum materials. While the essential ingredients of CDW order have been extensively studied, a comprehensive microscopic understanding is yet to be reached. Recent research efforts on the CDW phenomena in two-dimensional (2D) materials provide a new pathway toward a deeper understanding of its complexity. This review provides an overview of the CDW orders in 2D with atomically thin transition metal dichalcogenides (TMDCs) as the materials platform. We mainly focus on the electronic structure investigations on the epitaxially grown TMDC samples with angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy as complementary experimental tools. We discuss the possible origins of the 2D CDW, novel quantum states coexisting with them, and exotic types of charge orders that can only be realized in the 2D limit.

Direct observation of altermagnetic band splitting in CrSb thin films

Altermagnetism represents an emergent collinear magnetic phase with compensated order and an unconventional alternating even-parity wave spin order in the non-relativistic band structure. We investigate directly this unconventional band splitting near the Fermi energy through spin-integrated soft X-ray angular resolved photoemission spectroscopy. The experimentally obtained angle-dependent photoemission intensity, acquired from epitaxial thin films of the predicted altermagnet CrSb, demonstrates robust agreement with the corresponding band structure calculations. In particular, we observe the distinctive splitting of an electronic band on a low-symmetry path in the Brilliouin zone that connects two points featuring symmetry-induced degeneracy. The measured large magnitude of the spin splitting of approximately 0.6 eV and the position of the band just below the Fermi energy underscores the significance of altermagnets for spintronics based on robust broken time reversal symmetry responses arising from exchange energy scales, akin to ferromagnets, while remaining insensitive to external magnetic fields and possessing THz dynamics, akin to antiferromagnets.

Altermagnetic lifting of Kramers spin degeneracy

Lifted Kramers spin degeneracy (LKSD) has been among the central topics of condensed-matter physics since the dawn of the band theory of solids1,2. It underpins established practical applications as well as current frontier research, ranging from magnetic-memory technology3-7 to topological quantum matter8-14. Traditionally, LKSD has been considered to originate from two possible internal symmetry-breaking mechanisms. The first refers to time-reversal symmetry breaking by magnetization of ferromagnets and tends to be strong because of the non-relativistic exchange origin15. The second applies to crystals with broken inversion symmetry and tends to be comparatively weaker, as it originates from the relativistic spin-orbit coupling (SOC)16-19. A recent theory work based on spin-symmetry classification has identified an unconventional magnetic phase, dubbed altermagnetic20,21, that allows for LKSD without net magnetization and inversion-symmetry breaking. Here we provide the confirmation using photoemission spectroscopy and ab initio calculations. We identify two distinct unconventional mechanisms of LKSD generated by the altermagnetic phase of centrosymmetric MnTe with vanishing net magnetization20-23. Our observation of the altermagnetic LKSD can have broad consequences in magnetism. It motivates exploration and exploitation of the unconventional nature of this magnetic phase in an extended family of materials, ranging from insulators and semiconductors to metals and superconductors20,21, that have been either identified recently or perceived for many decades as conventional antiferromagnets21,24,25.

High-energy photoemission final states beyond the free-electron approximation

Three-dimensional (3D) electronic band structure is fundamental for understanding a vast diversity of physical phenomena in solid-state systems, including topological phases, interlayer interactions in van der Waals materials, dimensionality-driven phase transitions, etc. Interpretation of ARPES data in terms of 3D electron dispersions is commonly based on the free-electron approximation for the photoemission final states. Our soft-X-ray ARPES data on Ag metal reveals, however, that even at high excitation energies the final states can be a way more complex, incorporating several Bloch waves with different out-of-plane momenta. Such multiband final states manifest themselves as a complex structure and added broadening of the spectral peaks from 3D electron states. We analyse the origins of this phenomenon, and trace it to other materials such as Si and GaN. Our findings are essential for accurate determination of the 3D band structure over a wide range of materials and excitation energies in the ARPES experiment.

Coexistence of ferromagnetism and charge density waves in monolayer LaBr2

Charge density waves (CDWs), a common phenomenon of periodic lattice distortions, often suppress ferromagnetism in two-dimensional (2D) materials, hindering their magnetic applications. Here, we report a novel CDW that generates 2D ferromagnetism instead of suppressing it, through the formation of interstitial anionic electrons as the charge modulation mechanism. Via first-principles calculations and a low-energy effective model, we find that the highly symmetrical monolayer LaBr2 undergoes a 2 × 1 CDW transition to a magnetic semiconducting T' phase. Concurrently, the delocalized 5d1 electrons of La in LaBr2 redistribute and accumulate within the interstitial space in the T' phase, forming anionic electrons, also known as 2D electride or electrene. The strongly localized nature of anionic electrons promotes a Mott insulating state and full spin-polarization, while the overlap of their extended tails yields ferromagnetic direct exchange between them. Such transition introduces a new magnetic form of CDWs, offering promising opportunities for exploring novel fundamental physics and advanced spintronics applications.

Anomalous Hall Conductivity and Nernst Effect of the Ideal Weyl Semimetallic Ferromagnet EuCd2 As2

Weyl semimetal is a unique topological phase with topologically protected band crossings in the bulk and robust surface states called Fermi arcs. Weyl nodes always appear in pairs with opposite chiralities, and they need to have either time-reversal or inversion symmetry broken. When the time-reversal symmetry is broken the minimum number of Weyl points (WPs) is two. If these WPs are located at the Fermi level, they form an ideal Weyl semimetal (WSM). In this study, intrinsic ferromagnetic (FM) EuCd2 As2 are grown, predicted to be an ideal WSM and studied its electronic structure by angle-resolved photoemission spectroscopy, and scanning tunneling microscopy which agrees closely with the first principles calculations. Moreover, anomalous Hall conductivity and Nernst effect are observed, resulting from the non-zero Berry curvature, and the topological Hall effect arising from changes in the band structure caused by spin canting produced by magnetic fields. These findings can help realize several exotic quantum phenomena in inorganic topological materials that are otherwise difficult to assess because of the presence of multiple pairs of Weyl nodes.

First-Principles Assessment of CdTe as a Tunnel Barrier at the α-Sn/InSb Interface

Majorana zero modes, with prospective applications in topological quantum computing, are expected to arise in superconductor/semiconductor interfaces, such as β-Sn and InSb. However, proximity to the superconductor may also adversely affect the semiconductor's local properties. A tunnel barrier inserted at the interface could resolve this issue. We assess the wide band gap semiconductor, CdTe, as a candidate material to mediate the coupling at the lattice-matched interface between α-Sn and InSb. To this end, we use density functional theory (DFT) with Hubbard U corrections, whose values are machine-learned via Bayesian optimization (BO) [ npj Computational Materials 2020, 6, 180]. The results of DFT+U(BO) are validated against angle resolved photoemission spectroscopy (ARPES) experiments for α-Sn and CdTe. For CdTe, the z-unfolding method [ Advanced Quantum Technologies 2022, 5, 2100033] is used to resolve the contributions of different kz values to the ARPES. We then study the band offsets and the penetration depth of metal-induced gap states (MIGS) in bilayer interfaces of InSb/α-Sn, InSb/CdTe, and CdTe/α-Sn, as well as in trilayer interfaces of InSb/CdTe/α-Sn with increasing thickness of CdTe. We find that 16 atomic layers (3.5 nm) of CdTe can serve as a tunnel barrier, effectively shielding the InSb from MIGS from the α-Sn. This may guide the choice of dimensions of the CdTe barrier to mediate the coupling in semiconductor-superconductor devices in future Majorana zero modes experiments.

Visualizing Higher-Fold Topology in Chiral Crystals

Novel topological phases of matter are fruitful platforms for the discovery of unconventional electromagnetic phenomena. Higher-fold topology is one example, where the low-energy description goes beyond standard model analogs. Despite intensive experimental studies, conclusive evidence remains elusive for the multigap topological nature of higher-fold chiral fermions. In this Letter, we leverage a combination of fine-tuned chemical engineering and photoemission spectroscopy with photon energy contrast to discover the higher-fold topology of a chiral crystal. We identify all bulk branches of a higher-fold chiral fermion for the first time, critically important for allowing us to explore unique Fermi arc surface states in multiple interband gaps, which exhibit an emergent ladder structure. Through designer chemical gating of the samples in combination with our measurements, we uncover an unprecedented multigap bulk boundary correspondence. Our demonstration of multigap electronic topology will propel future research on unconventional topological responses.

Interlayer Chemical Modulation of Phase Transitions in Two-Dimensional Metal Chalcogenides

Two-dimensional metal chalcogenides (2D-MCs) with complex interactions are usually rich in phase transition behavior, such as superconductivity, charge density wave (CDW), and magnetic transitions, which hold great promise for the exploration of exciting physical properties and functional applications. Interlayer chemical modulation, as a renewed surface modification method, presents congenital advantages to regulate the phase transitions of 2D-MCs due to its confined space, strong guest-host interactions, and local and reversible modulation without destructing the host lattice, whereby new phenomena and functionalities can be produced. Herein, recent achievements in the interlayer chemical modulation of 2D-MCs are reviewed from the aspects of superconducting transition, CDW transition, semiconductor-to-metal transition, magnetic phase transition, and lattice transition. We systematically discuss the roles of charge transfer, spin coupling, and lattice strain on the modulation of phase transitions in the guest-host architectures of 2D-MCs established by electrochemical intercalation, solution-processed intercalation, and solid-state intercalation. New physical phenomena, new insight into the mechanism of phase transitions, and derived functional applications are presented. Finally, a prospectus of the challenges and opportunities of interlayer chemical modulation for future research is pointed out.

Visualization of Tunable Weyl Line in A-A Stacking Kagome Magnets

Kagome magnets provide a fascinating platform for a plethora of topological quantum phenomena, in which the delicate interplay between frustrated crystal structure, magnetization, and spin-orbit coupling (SOC) can engender highly tunable topological states. Here, utilizing angle-resolved photoemission spectroscopy, the Weyl lines are directly visualized with strong out-of-plane dispersion in the A-A stacked kagome magnet GdMn₆ Sn₆ . Remarkably, the Weyl lines exhibit a strong magnetization-direction-tunable SOC gap and binding energy tunability after substituting Gd with Tb and Li, respectively. These results not only illustrate the magnetization direction and valence counting as efficient tuning knobs for realizing and controlling distinct 3D topological phases, but also demonstrate AMn₆ Sn₆ (A = rare earth, or Li, Mg, or Ca) as a versatile material family for exploring diverse emergent topological quantum responses.

Solvent-Induced Degradation of Electrochemically Exfoliated Vanadium Selenide Visualized by Electron Microscopy

Recently discovered two-dimensional ferromagnetic materials (2DFMs) have rapidly gained much interest in the fields of spintronics and computing, where they may prove powerful tools for miniaturizing devices such as magnetic tunnel junctions and spin-transfer torque memory bits. In addition, heterojunctions and twisted bilayer stacks of such materials may yield exotic spin textures. However, preparation of such devices is complicated by the air sensitivity of many 2DFMs. Here, we report details on the preparation of few-to-monolayer flakes of vanadium selenide (VSe2) using electrochemical exfoliation in propylene carbonate. We also present a detailed study of the effects of air on the structure and magnetic properties of bare and passivated VSe2 after different concentrations of surface passivation treatment. We characterized the microstructure of holes in the VSe2 flakes and the formation of new compounds arising from air exposure, solvent exposure during the exfoliating process, and deliberate electron beam irradiation (sculpting). We sculpt VSe2 flakes while retaining the 1T-VSe2 lattice structure, opening the door for top-down patterned high-resolution 2DFM nanostructures. Additionally, investigation of the magnetic response of nanosheets using magnetic force microscopy (MFM) showed that the oxidation-induced damage only affects the surface fields locally and does not quench large-scale magnetic signal. The findings of this study pave the way toward practical incorporation of 2D ferromagnetic materials in nanoelectronics.

Modulation doping and charge density wave transition in layered PbSe-VSe2 ferecrystal heterostructures

Controlling charge carrier concentrations remains a major challenge in the application of quasi-two-dimensional materials. A promising approach is the modulation doping of transport channels via charge transfer from neighboring layers in stacked heterostructures. Ferecrystals, which are metastable layered structures created from artificial elemental precursors, are a perfect model system to investigate modulation doping, as they offer unparalleled freedom in the combination of different constituents and variable layering sequences. In this work, differently stacked combinations of rock-salt structured PbSe and VSe₂ were investigated using X-ray photoelectron spectroscopy. The PbSe layers act as electron donors in all heterostructures, with about 0.1 to 0.3 donated electrons per VSe₂ unit cell. While they initially retain their inherent semiconducting behavior, they themselves become metallic when combined with a larger number of VSe₂ layers, as evidenced by a change of the XPS core level lineshape. Additional analysis of the valence band structure was performed for selected stacking orders at different sample temperatures to investigate a predicted charge density wave (CDW) transition. While there appear to be hints of a gap opening, the data so far is inconclusive and the application of spatially resolved techniques such as scanning tunneling microscopy is encouraged for further studies.

Construction and physical properties of low-dimensional structures for nanoscale electronic devices

Over the past decades, construction of nanoscale electronic devices with novel functionalities based on low-dimensional structures, such as single molecules and two-dimensional (2D) materials, has been rapidly developed. To investigate their intrinsic properties for versatile functionalities of nanoscale electronic devices, it is crucial to precisely control the structures and understand the physical properties of low-dimensional structures at the single atomic level. In this review, we provide a comprehensive overview of the construction of nanoelectronic devices based on single molecules and 2D materials and the investigation of their physical properties. For single molecules, we focus on the construction of single-molecule devices, such as molecular motors and molecular switches, by precisely controlling their self-assembled structures on metal substrates and charge transport properties. For 2D materials, we emphasize their spin-related electrical transport properties for spintronic device applications and the role that interfaces among 2D semiconductors, contact electrodes, and dielectric substrates play in the electrical performance of electronic, optoelectronic, and memory devices. Finally, we discuss the future research direction in this field, where we can expect a scientific breakthrough.

Observation of a linked-loop quantum state in a topological magnet

Quantum phases can be classified by topological invariants, which take on discrete values capturing global information about the quantum state^1-13. Over the past decades, these invariants have come to play a central role in describing matter, providing the foundation for understanding superfluids⁵, magnets^6,7, the quantum Hall effect^3,8, topological insulators^9,10, Weyl semimetals^11-13 and other phenomena. Here we report an unusual linking-number (knot theory) invariant associated with loops of electronic band crossings in a mirror-symmetric ferromagnet^14-20. Using state-of-the-art spectroscopic methods, we directly observe three intertwined degeneracy loops in the material's three-torus, T³, bulk Brillouin zone. We find that each loop links each other loop twice. Through systematic spectroscopic investigation of this linked-loop quantum state, we explicitly draw its link diagram and conclude, in analogy with knot theory, that it exhibits the linking number (2, 2, 2), providing a direct determination of the invariant structure from the experimental data. We further predict and observe, on the surface of our samples, Seifert boundary states protected by the bulk linked loops, suggestive of a remarkable Seifert bulk-boundary correspondence. Our observation of a quantum loop link motivates the application of knot theory to the exploration of magnetic and superconducting quantum matter.

Coexisting Charge-Ordered States with Distinct Driving Mechanisms in Monolayer VSe2

Thinning crystalline materials to two dimensions (2D) creates a rich playground for electronic phases, including charge, spin, superconducting, and topological order. Bulk materials hosting charge density waves (CDWs), when reduced to ultrathin films, have shown CDW enhancement and tunability. However, charge order confined to only 2D remains elusive. Here we report a distinct charge ordered state emerging in the monolayer limit of 1T-VSe₂. Systematic scanning tunneling microscopy experiments reveal that bilayer VSe₂ largely retains the bulk electronic structure, hosting a tridirectional CDW. However, monolayer VSe₂ ─consistently across distinct substrates─exhibits a dimensional crossover, hosting two CDWs with distinct wavelengths and transition temperatures. Electronic structure calculations reveal that while one CDW is bulk-like and arises from the well-known Peierls mechanism, the other is decidedly unconventional. The observed CDW-lattice decoupling and the emergence of a flat band suggest that the second CDW could arise from enhanced electron-electron interactions in the 2D limit. These findings establish monolayer-VSe₂ as a host of coexisting charge orders with distinct origins, and enable the tailoring of electronic phenomena via emergent interactions in 2D materials.

Phase-Transition Mo1-xVxSe2 Alloy Nanosheets with Rich V-Se Vacancies and Their Enhanced Catalytic Performance of Hydrogen Evolution Reaction

Alloys of transition-metal dichalcogenide can display distinctive phase evolution because of their two-dimensional structures. Herein, we report the colloidal synthesis of Mo_1-xV_xSe₂ alloy nanosheets with full composition tuning. Alloying led to a phase transition at x = 0.7 from the semiconducting 2H phase MoSe₂ to the metallic 1T phase VSe₂. It also produced significant V and Se vacancies, which became the richest in the 2H phase at x = 0.3-0.5. Extensive spin-polarized density functional theory calculations consistently predicted the 2H-1T phase transition at x = 0.7, in agreement with the experimental results. The vacancy formation energy also supports the formation of V and Se vacancies. Alloying in the 2H phase enhanced the electrocatalytic performance toward hydrogen evolution reaction (HER) at x = 0.3 (in 0.5 M H₂SO₄) or 0.4 (in 1 M KOH). The Gibbs free energy along the HER pathway indicates that this maximum performance is due to the highest concentration of active V and Se vacancy sites.

Large linear non-saturating magnetoresistance and high mobility in ferromagnetic MnBi

A large non-saturating magnetoresistance has been observed in several nonmagnetic topological Weyl semi-metals with high mobility of charge carriers at the Fermi energy. However, ferromagnetic systems rarely display a large magnetoresistance because of localized electrons in heavy d bands with a low Fermi velocity. Here, we report a large linear non-saturating magnetoresistance and high mobility in ferromagnetic MnBi. MnBi, unlike conventional ferromagnets, exhibits a large linear non-saturating magnetoresistance of 5000% under a pulsed field of 70 T. The electrons and holes' mobilities are both 5000 cm2V-1s-1 at 2 K, which are one of the highest for ferromagnetic materials. These phenomena are due to the spin-polarised Bi 6p band's sharp dispersion with a small effective mass. Our study provides an approach to achieve high mobility in ferromagnetic systems with a high Curie temperature, which is advantageous for topological spintronics.

Charge Density Waves in Electron-Doped Molybdenum Disulfide

We present the discovery of a charge density wave (CDW) ground state in heavily electron-doped molybdenum disulfide (MoS₂). This is the first observation of a CDW in any d² (column 6) transition metal dichalcogenide (TMD). The band structure of MoS₂ is distinct from the d⁰ and d¹ TMDs in which CDWs have been previously observed, facilitating new insight into CDW formation. We demonstrate a metal-insulator transition at 85 K, a 25 meV gap at the Fermi level, and two distinct CDW modulations, (2√3 × 2√3) R30° and 2 × 2, attributable to Fermi surface nesting (FSN) and electron-phonon coupling (EPC), respectively. This simultaneous exhibition of FSN and EPC CDW modulations is unique among observations of CDW ground states, and we discuss this in the context of band folding. Our observations provide a route toward the resolution of controversies surrounding the origin of CDW modulations in TMDs.

Optical manipulation of electronic dimensionality in a quantum material

Exotic phenomena can be achieved in quantum materials by confining electronic states into two dimensions. For example, relativistic fermions are realized in a single layer of carbon atoms¹, the quantized Hall effect can result from two-dimensional (2D) systems^2,3, and the superconducting transition temperature can be considerably increased in a one-atomic-layer material^4,5. Ordinarily, a 2D electronic system can be obtained by exfoliating the layered materials, growing monolayer materials on substrates, or establishing interfaces between different materials. Here we use femtosecond infrared laser pulses to invert the periodic lattice distortion sectionally in a three-dimensional (3D) charge density wave material (1T-TiSe₂), creating macroscopic domain walls of transient 2D ordered electronic states with unusual properties. The corresponding ultrafast electronic and lattice dynamics are captured by time-resolved and angle-resolved photoemission spectroscopy⁶ and ultrafast electron diffraction at energies of the order of megaelectronvolts⁷. Moreover, in the photoinduced 2D domain wall near the surface we identify a phase with enhanced density of states and signatures of potential opening of an energy gap near the Fermi energy. Such optical modulation of atomic motion is an alternative path towards realizing 2D electronic states and will be a useful platform upon which novel phases in quantum materials may be discovered.

Multiple charge density wave phases of monolayer VSe2manifested by graphene substrates

A combined study of scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) is conducted to understand the multiple charge density wave (CDW) phases of monolayer (ML) VSe₂films manifested by graphene substrates. Submonolayer (∼0.8 ML) VSe₂films are prepared on two different substrates of single-layer graphene (SLG) and bi-layer graphene (BLG) on a 6H-SiC(0001). We find that ML VSe₂films are less coupled to the SLG substrate compared to that of ML VSe₂/BLG. Then, ML VSe₂grown on SLG and BLG substrates reveals a very different topography in STM. While ML VSe₂/BLG shows one unidirectional modulation of √3 × 2 and √3 × √7 CDW in topography, ML VSe₂/SLG presents a clear modulation of 4 × 1 CDW interfering with √3 × 2 and √3 × √7 CDW which has not been previously observed. We explicitly show that the reciprocal vector of 4 × 1 CDW fits perfectly into the long parallel sections of cigar-shaped Fermi surfaces near the M point in ML VSe₂, satisfying Fermi surface nesting. Since bulk VSe₂is also well-known for the 4 × 4 × 3 CDW formed by Fermi surface nesting, the 4 × 1 CDW in ML VSe₂/SLG is attributed to the planar projection of 4 × 4 × 3 CDW in bulk. Our result clarifies the nature of the 4 × 1 CDW in ML VSe₂system and is a good example demonstrating the essential role of substrates in two-dimensional transition metal dichalcogenides.

Momentum-space imaging spectroscopy for the study of nanophotonic materials

The novel phenomena in nanophotonic materials, such as the angle-dependent reflection and negative refraction effect, are closely related to the photonic dispersions E(p). E(p) describes the relation between energy E and momentum p of photonic eigenmodes, and essentially determines the optical properties of materials. As E(p) is defined in momentum space (k-space), the experimental method to detect the energy distribution, that is the spectrum, in a momentum-resolved manner is highly required. In this review, the momentum-space imaging spectroscopy (MSIS) system is presented, which can directly study the spectral information in momentum space. Using the MSIS system, the photonic dispersion can be captured in one shot with high energy and momentum resolution. From the experimental momentum-resolved spectrum data, other key features of photonic eigenmodes, such as quality factors and polarization states, can also be extracted through the post-processing algorithm based on the coupled mode theory. In addition, the interference configurations of the MSIS system enable the measurement of coherence properties and phase information of nanophotonic materials, which is important for the study of light-matter interaction and beam shaping with nanostructures. The MSIS system can give the comprehensive information of nanophotonic materials, and is greatly useful for the study of novel photonic phenomena and the development of nanophotonic technologies.

Angle, Spin, and Depth Resolved Photoelectron Spectroscopy on Quantum Materials

The role of X-ray based electron spectroscopies in determining chemical, electronic, and magnetic properties of solids has been well-known for several decades. A powerful approach is angle-resolved photoelectron spectroscopy, whereby the kinetic energy and angle of photoelectrons emitted from a sample surface are measured. This provides a direct measurement of the electronic band structure of crystalline solids. Moreover, it yields powerful insights into the electronic interactions at play within a material and into the control of spin, charge, and orbital degrees of freedom, central pillars of future solid state science. With strong recent focus on research of lower-dimensional materials and modified electronic behavior at surfaces and interfaces, angle-resolved photoelectron spectroscopy has become a core technique in the study of quantum materials. In this review, we provide an introduction to the technique. Through examples from several topical materials systems, including topological insulators, transition metal dichalcogenides, and transition metal oxides, we highlight the types of information which can be obtained. We show how the combination of angle, spin, time, and depth-resolved experiments are able to reveal "hidden" spectral features, connected to semiconducting, metallic and magnetic properties of solids, as well as underlining the importance of dimensional effects in quantum materials.

Ultrafast Triggering of Insulator-Metal Transition in Two-Dimensional VSe2

The transition-metal dichalcogenide VSe₂ exhibits an increased charge density wave transition temperature and an emerging insulating phase when thinned to a single layer. Here, we investigate the interplay of electronic and lattice degrees of freedom that underpin these phases in single-layer VSe₂ using ultrafast pump-probe photoemission spectroscopy. In the insulating state, we observe a light-induced closure of the energy gap, which we disentangle from the ensuing hot carrier dynamics by fitting a model spectral function to the time-dependent photoemission intensity. This procedure leads to an estimated time scale of 480 fs for the closure of the gap, which suggests that the phase transition in single-layer VSe₂ is driven by electron-lattice interactions rather than by Mott-like electronic effects. The ultrafast optical switching of these interactions in SL VSe₂ demonstrates the potential for controlling phase transitions in 2D materials with light.

van der Waals driven anharmonic melting of the 3D charge density wave in VSe2

Understanding of charge-density wave (CDW) phases is a main challenge in condensed matter due to their presence in high-Tc superconductors or transition metal dichalcogenides (TMDs). Among TMDs, the origin of the CDW in VSe₂ remains highly debated. Here, by means of inelastic x-ray scattering and first-principles calculations, we show that the CDW transition is driven by the collapse at 110 K of an acoustic mode at q_CDW = (2.25 0 0.7) r.l.u. The softening starts below 225 K and expands over a wide region of the Brillouin zone, identifying the electron-phonon interaction as the driving force of the CDW. This is supported by our calculations that determine a large momentum-dependence of the electron-phonon matrix-elements that peak at the CDW wave vector. Our first-principles anharmonic calculations reproduce the temperature dependence of the soft mode and the T_CDW onset only when considering the out-of-plane van der Waals interactions, which reveal crucial for the melting of the CDW phase.

The nature of the charge density wave transition in VSe₂ is still debated. Here, the authors demonstrate that the transition is mainly driven by electron-phonon interactions, despite the presence of the Fermi-surface nesting, and that Wan-der-Waals forces are responsible for melting of the charge density wave order.

Weyl fermions, Fermi arcs, and minority-spin carriers in ferromagnetic CoS2

Magnetic Weyl semimetals are a newly discovered class of topological materials that may serve as a platform for exotic phenomena, such as axion insulators or the quantum anomalous Hall effect. Here, we use angle-resolved photoelectron spectroscopy and ab initio calculations to discover Weyl cones in CoS2, a ferromagnet with pyrite structure that has been long studied as a candidate for half-metallicity, which makes it an attractive material for spintronic devices. We directly observe the topological Fermi arc surface states that link the Weyl nodes, which will influence the performance of CoS2 as a spin injector by modifying its spin polarization at interfaces. In addition, we directly observe a minority-spin bulk electron pocket in the corner of the Brillouin zone, which proves that CoS2 cannot be a true half-metal.

Observation and control of maximal Chern numbers in a chiral topological semimetal

Topological semimetals feature protected nodal band degeneracies characterized by a topological invariant known as the Chern number (C). Nodal band crossings with linear dispersion are expected to have at most |C|=4, which sets an upper limit to the magnitude of many topological phenomena in these materials. Here, we show that the chiral crystal palladium gallium (PdGa) displays multifold band crossings, which are connected by exactly four surface Fermi arcs, thus proving that they carry the maximal Chern number magnitude of 4. By comparing two enantiomers, we observe a reversal of their Fermi-arc velocities, which demonstrates that the handedness of chiral crystals can be used to control the sign of their Chern numbers.

Fermi Surface Reconstruction and Electron Dynamics at the Charge-Density-Wave Transition in TiSe_{2}

The evolution of the charge carrier concentrations and mobilities are examined across the charge-density-wave (CDW) transition in TiSe_{2}. Combined quantum oscillation and magnetotransport measurements show that a small electron pocket dominates the electronic properties at low temperatures while an electron and hole pocket contribute at room temperature. At the CDW transition, an abrupt Fermi surface reconstruction and a minimum in the electron and hole mobilities are extracted from two-band and Kohler analysis of magnetotransport measurements. The minimum in the mobilities is associated with the overseen role of scattering from the softening CDW mode. With the carrier concentrations and dynamics dominated by the CDW and the associated bosonic mode, our results highlight TiSe_{2} as a prototypical system to study the Fermi surface reconstruction at a density-wave transition.

Thickness-dependent magnetotransport properties in 1T VSe2 single crystals prepared by chemical vapor deposition

Two-dimensional (2D) metallic transition metal dichalcogenides (TMDs) exhibit fascinating quantum effects, such as charge-density-wave (CDW) and weak antilocalization (WAL) effect. Herein, low temperature synthesis of 1T phase VSe₂ single crystals with thickness ranging from 3 to 41 nm by chemical vapor deposition (CVD) is reported. The VSe₂ shows a decreasing phase transition temperature of the CDW when the thickness is decreased. Moreover, low-temperature magnetotransport measurements demonstrate a linear positive and non-saturating magnetoresistance (MR) of 35% from a 35 nm thick VSe₂ at 15 T and 2 K due to CDW induce mobility fluctuations. Surprisingly, Kohler's rule analysis of the MR reveals the non-applicability of Kohler's rule for temperature above 50 K indicating that the MR behavior cannot be described in terms of semiclassical transport on a single Fermi surface with a single scattering time. Furthermore, WAL effect is observed in the 4.2 nm thick VSe₂ at low magnetic fields at 2 K, revealing the contribution of the quantum interference effect at the 2D limit. The phase coherence length [Formula: see text] and spin-orbit scattering length [Formula: see text] were determined to be 73 nm and 18 nm at 2 K, respectively. Our work opens new avenues to study the fundamental quantum phenomena in CVD-deposited TMDs.

Novel polymorphic phase of two-dimensional VSe2: the 1T' structure and its lattice dynamics

Polymorphisms allowing multiple structural phases are among the most fascinating properties of transition metal dichalcogenides (TMDs). Herein, the polymorphic 1T' phase and its lattice dynamics for bilayer VSe₂ grown on epitaxial bilayer graphene are investigated via low temperature scanning tunneling microscopy (STM). The 1T' structure, mostly observed in group-6 TMDs, is unexpected in VSe₂, which is a group-5 TMD. Emergence of the 1T' structure in bilayer VSe₂ suggests the important roles of interface and layer configurations, providing new possibilities regarding the polymorphism of TMDs. Detailed topographical analysis elucidates the microscopic nature of the 1T' structure, confirming that Se-like and V-like surfaces can be resolved depending on the polarity of the sample bias. In addition, bilayer VSe₂ can transit from a static state of the 1T' phase to a dynamic state consisting of lattice vibrations, triggered by tunneling current from the STM tip. Topography also shows hysteretic behavior during the static-dynamic transition, which is attributed to latent energy existing between the two states. The observed lattice dynamics involve vibrational motion of the Se atoms and the middle V atoms. Our observations will provide important information to establish in-depth understanding of the microscopic nature of 1T' structures and the polymorphism of two-dimensional TMDs.

Quasi-2D Transport and Weak Antilocalization Effect in Few-layered VSe2

With strong spin-orbit coupling (SOC), ultrathin two-dimensional (2D) transitional metal chalcogenides (TMDs) are predicted to exhibit weak antilocalization (WAL) effect at low temperatures. The observation of WAL effect in VSe₂ is challenging due to the relative weak SOC and three-dimensional (3D) transport nature in thick VSe₂. Here, we report on the observation of quasi-2D transport and WAL effect in sublimed-salt-assisted low-temperature chemical vapor deposition (CVD) grown few-layered high-quality VSe₂ nanosheets. The WAL magnitudes in magnetoconductance can be perfectly fitted by the 2D Hikami-Larkin-Nagaoka (HLN) equation in the presence of strong SOC, by which the spin-orbit scattering length l_SO and phase coherence length l_ϕ have been extracted. The phase coherence length l_ϕ shows a power law dependence with temperature, l_ϕ∼ T^-1/2, revealing an electron-electron interaction-dominated dephasing mechanism. Such sublimed-salt-assisted growth of high-quality few-layered VSe₂ and the observation of WAL pave the way for future spintronic and valleytronic applications.

Spin fluctuation induced Weyl semimetal state in the paramagnetic phase of EuCd2As2

Weyl fermions as emergent quasiparticles can arise in Weyl semimetals (WSMs) in which the energy bands are nondegenerate, resulting from inversion or time-reversal symmetry breaking. Nevertheless, experimental evidence for magnetically induced WSMs is scarce. Here, using photoemission spectroscopy, we observe that the degeneracy of Bloch bands is already lifted in the paramagnetic phase of EuCd2As2. We attribute this effect to the itinerant electrons experiencing quasi-static and quasi-long-range ferromagnetic fluctuations. Moreover, the spin-nondegenerate band structure harbors a pair of ideal Weyl nodes near the Fermi level. Hence, we show that long-range magnetic order and the spontaneous breaking of time-reversal symmetry are not essential requirements for WSM states in centrosymmetric systems and that WSM states can emerge in a wider range of condensed matter systems than previously thought.

Observation of Weyl Nodes in Robust Type-II Weyl Semimetal WP_{2}

Distinct to type-I Weyl semimetals (WSMs) that host quasiparticles described by the Weyl equation, the energy dispersion of quasiparticles in type-II WSMs violates Lorentz invariance and the Weyl cones in the momentum space are tilted. Since it was proposed that type-II Weyl fermions could emerge from (W,Mo)Te_{2} and (W,Mo)P_{2} families of materials, a large number of experiments have been dedicated to unveiling the possible manifestation of type-II WSMs, e.g., surface-state Fermi arcs. However, the interpretations of the experimental results are very controversial. Here, using angle-resolved photoemission spectroscopy supported by the first-principles calculations, we probe the tilted Weyl cone bands in the bulk electronic structure of WP_{2} directly, which are at the origin of Fermi arcs at the surfaces and transport properties related to the chiral anomaly in type-II WSMs. Our results ascertain that, due to the spin-orbit coupling, the Weyl nodes originate from the splitting of fourfold degenerate band-crossing points with Chern numbers C=±2 induced by the crystal symmetries of WP_{2}, which is unique among all the discovered WSMs. Our finding also provides a guiding line to observe the chiral anomaly that could manifest in novel transport properties.

Unique Gap Structure and Symmetry of the Charge Density Wave in Single-Layer VSe_{2}

Single layers of transition metal dichalcogenides (TMDCs) are excellent candidates for electronic applications beyond the graphene platform; many of them exhibit novel properties including charge density waves (CDWs) and magnetic ordering. CDWs in these single layers are generally a planar projection of the corresponding bulk CDWs because of the quasi-two-dimensional nature of TMDCs; a different CDW symmetry is unexpected. We report herein the successful creation of pristine single-layer VSe_{2}, which shows a (sqrt[7]×sqrt[3]) CDW in contrast to the (4×4) CDW for the layers in bulk VSe_{2}. Angle-resolved photoemission spectroscopy from the single layer shows a sizable (sqrt[7]×sqrt[3]) CDW gap of ∼100  meV at the zone boundary, a 220 K CDW transition temperature twice the bulk value, and no ferromagnetic exchange splitting as predicted by theory. This robust CDW with an exotic broken symmetry as the ground state is explained via a first-principles analysis. The results illustrate a unique CDW phenomenon in the two-dimensional limit.

Emergence of a Metal-Insulator Transition and High-Temperature Charge-Density Waves in VSe2 at the Monolayer Limit

Emergent phenomena driven by electronic reconstructions in oxide heterostructures have been intensively discussed. However, the role of these phenomena in shaping the electronic properties in van der Waals heterointerfaces has hitherto not been established. By reducing the material thickness and forming a heterointerface, we find two types of charge-ordering transitions in monolayer VSe₂ on graphene substrates. Angle-resolved photoemission spectroscopy (ARPES) uncovers that Fermi-surface nesting becomes perfect in ML VSe₂. Renormalization-group analysis confirms that imperfect nesting in three dimensions universally flows into perfect nesting in two dimensions. As a result, the charge-density wave-transition temperature is dramatically enhanced to a value of 350 K compared to the 105 K in bulk VSe₂. More interestingly, ARPES and scanning tunneling microscopy measurements confirm an unexpected metal-insulator transition at 135 K that is driven by lattice distortions. The heterointerface plays an important role in driving this novel metal-insulator transition in the family of monolayer transition-metal dichalcogenides.

Band Topology and Linking Structure of Nodal Line Semimetals with Z_{2} Monopole Charges

We study the band topology and the associated linking structure of topological semimetals with nodal lines carrying Z_{2} monopole charges, which can be realized in three-dimensional systems invariant under the combination of inversion P and time reversal T when spin-orbit coupling is negligible. In contrast to the well-known PT-symmetric nodal lines protected only by the π Berry phase, in which a single nodal line can exist, the nodal lines with Z_{2} monopole charges should always exist in pairs. We show that a pair of nodal lines with Z_{2} monopole charges is created by a double band inversion process and that the resulting nodal lines are always linked by another nodal line formed between the two topmost occupied bands. It is shown that both the linking structure and the Z_{2} monopole charge are the manifestation of the nontrivial band topology characterized by the second Stiefel-Whitney class, which can be read off from the Wilson loop spectrum. We show that the second Stiefel-Whitney class can serve as a well-defined topological invariant of a PT-invariant two-dimensional insulator in the absence of Berry phase. Based on this, we propose that pair creation and annihilation of nodal lines with Z_{2} monopole charges can mediate a topological phase transition between a normal insulator and a three-dimensional weak Stiefel-Whitney insulator. Moreover, using first-principles calculations, we predict ABC-stacked graphdiyne as a nodal line semimetal (NLSM) with Z_{2} monopole charges having the linking structure. Finally, we develop a formula for computing the second Stiefel-Whitney class based on parity eigenvalues at inversion-invariant momenta, which is used to prove the quantized bulk magnetoelectric response of NLSMs with Z_{2} monopole charges under a T-breaking perturbation.

k-space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures

Nanostructures based on buried interfaces and heterostructures are at the heart of modern semiconductor electronics as well as future devices utilizing spintronics, multiferroics, topological effects, and other novel operational principles. Knowledge of electronic structure of these systems resolved in electron momentum k delivers unprecedented insights into their physics. Here we explore 2D electron gas formed in GaN/AlGaN high-electron-mobility transistor heterostructures with an ultrathin barrier layer, key elements in current high-frequency and high-power electronics. Its electronic structure is accessed with angle-resolved photoelectron spectroscopy whose probing depth is pushed to a few nanometers using soft-X-ray synchrotron radiation. The experiment yields direct k-space images of the electronic structure fundamentals of this system—the Fermi surface, band dispersions and occupancy, and the Fourier composition of wavefunctions encoded in the k-dependent photoemission intensity. We discover significant planar anisotropy of the electron Fermi surface and effective mass connected with relaxation of the interfacial atomic positions, which translates into nonlinear (high-field) transport properties of the GaN/AlGaN heterostructures as an anisotropy of the saturation drift velocity of the 2D electrons.

Semiconductor heterostructures hosting two-dimensional electron gases are widely used today in high-electron-mobility transistors. Here, the authors probe the electronic structure in GaN/AlGaN, heterostructures, discovering planar anisotropy of the electron Fermi surface, offering new insights into transport properties.

Electronic Structure and Enhanced Charge-Density Wave Order of Monolayer VSe2

How the interacting electronic states and phases of layered transition-metal dichalcogenides evolve when thinned to the single-layer limit is a key open question in the study of two-dimensional materials. Here, we use angle-resolved photoemission to investigate the electronic structure of monolayer VSe₂ grown on bilayer graphene/SiC. While the global electronic structure is similar to that of bulk VSe₂, we show that, for the monolayer, pronounced energy gaps develop over the entire Fermi surface with decreasing temperature below T_c = 140 ± 5 K, concomitant with the emergence of charge-order superstructures evident in low-energy electron diffraction. These observations point to a charge-density wave instability in the monolayer that is strongly enhanced over that of the bulk. Moreover, our measurements of both the electronic structure and of X-ray magnetic circular dichroism reveal no signatures of a ferromagnetic ordering, in contrast to the results of a recent experimental study as well as expectations from density functional theory. Our study thus points to a delicate balance that can be realized between competing interacting states and phases in monolayer transition-metal dichalcogenides.

van der Waals Metallic Transition Metal Dichalcogenides

Transition metal dichalcogenides are layered materials which are composed of transition metals and chalcogens of the group VIA in a 1:2 ratio. These layered materials have been extensively investigated over synthesis and optical and electrical properties for several decades. It can be insulators, semiconductors, or metals revealing all types of condensed matter properties from a magnetic lattice distorted to superconducting characteristics. Some of these also feature the topological manner. Instead of covering the semiconducting properties of transition metal dichalcogenides, which have been extensively revisited and reviewed elsewhere, here we present the structures of metallic transition metal dichalcogenides and their synthetic approaches for not only high-quality wafer-scale samples using conventional methods (e.g., chemical vapor transport, chemical vapor deposition) but also local small areas by a modification of the materials using Li intercalation, electron beam irradiation, light illumination, pressures, and strains. Some representative band structures of metallic transition metal dichalcogenides and their strong layer-dependence are reviewed and updated, both in theoretical calculations and experiments. In addition, we discuss the physical properties of metallic transition metal dichalcogenides such as periodic lattice distortion, magnetoresistance, superconductivity, topological insulator, and Weyl semimetal. Approaches to overcome current challenges related to these materials are also proposed.

SLS-2 - the upgrade of the Swiss Light Source

An upgrade of the Swiss Light Source (SLS) is planned for 2021-2024 and includes the exchange of the existing storage ring by a new one providing about 40-50 times lower emittance in user operation mode. This will extend the performance of SLS in particular in the fields of coherent imaging, full-field tomography, soft X-ray angle-resolved photoelectron spectroscopy and resonant inelastic X-ray scattering. A science case and a conceptual design for the machine have been established. As a summary of these reports, the novel lattice design, undulator developments and scientific highlights are presented.

A Perspective on the Application of Spatially Resolved ARPES for 2D Materials

In this paper, a perspective on the application of Spatially- and Angle-Resolved PhotoEmission Spectroscopy (ARPES) for the study of two-dimensional (2D) materials is presented. ARPES allows the direct measurement of the electronic band structure of materials generating extremely useful insights into their electronic properties. The possibility to apply this technique to 2D materials is of paramount importance because these ultrathin layers are considered fundamental for future electronic, photonic and spintronic devices. In this review an overview of the technical aspects of spatially localized ARPES is given along with a description of the most advanced setups for laboratory and synchrotron-based equipment. This technique is sensitive to the lateral dimensions of the sample. Therefore, a discussion on the preparation methods of 2D material is presented. Some of the most interesting results obtained by ARPES are reported in three sections including: graphene, transition metal dichalcogenides (TMDCs) and 2D heterostructures. Graphene has played a key role in ARPES studies because it inspired the use of this technique with other 2D materials. TMDCs are presented for their peculiar transport, optical and spin properties. Finally, the section featuring heterostructures highlights a future direction for research into 2D material structures.

Strong room-temperature ferromagnetism in VSe2 monolayers on van der Waals substrates

Reduced dimensionality and interlayer coupling in van der Waals materials gives rise to fundamentally different electronic ¹ , optical ² and many-body quantum^3-5 properties in monolayers compared with the bulk. This layer-dependence permits the discovery of novel material properties in the monolayer regime. Ferromagnetic order in two-dimensional materials is a coveted property that would allow fundamental studies of spin behaviour in low dimensions and enable new spintronics applications^6-8. Recent studies have shown that for the bulk-ferromagnetic layered materials CrI₃ (ref. ⁹ ) and Cr₂Ge₂Te₆ (ref. ¹⁰ ), ferromagnetic order is maintained down to the ultrathin limit at low temperatures. Contrary to these observations, we report the emergence of strong ferromagnetic ordering for monolayer VSe₂, a material that is paramagnetic in the bulk^11,12. Importantly, the ferromagnetic ordering with a large magnetic moment persists to above room temperature, making VSe₂ an attractive material for van der Waals spintronics applications.

Defect introduced paramagnetism and weak localization in two-dimensional metal VSe2

We have carried out a detailed investigation of the magnetism, valence state, and magnetotransport in VSe₂ bulk single crystals, as well as in laminates obtained by mechanical exfoliation. In sharp contrast to the ferromagnetic behavior reported previously, here, no ferromagnetism could be detected for VSe₂ single crystal and laminate from room temperature down to 2 K. Neither did we find the Curie paramagnetism expected due to the 3d ¹ odd-electronic configuration of covalent V⁴⁺ ions. Rather, intrinsic VSe₂ is a non-magnetic alloy without local moment. Only a weak paramagnetic contribution introduced by defects is noticeable below 50 K. A weak localization effect due to defects was also observed in VSe₂ single crystals for the first time.

Temperature dependence of band gap in MoSe2 grown by molecular beam epitaxy

We report on a temperature-dependent band gap property of epitaxial MoSe₂ ultrathin films. We prepare uniform MoSe₂ films epitaxially grown on graphenized SiC substrates with controlled thicknesses by molecular beam epitaxy. Spectroscopic ellipsometry measurements upon heating sample in ultra-high vacuum showed temperature-dependent optical spectra between room temperature to 850 °C. We observed a gradual energy shift of optical band gap depending on the measurement temperature for different film thicknesses. Fitting with the vibronic model of Huang and Rhys indicates that the constant thermal expansion accounts for the steady decrease of band gap. We also directly probe both optical and stoichiometric changes across the decomposition temperature, which should be useful for developing high-temperature electronic devices and fabrication process with the similar metal chalcogenide films.

Three-Dimensional Electronic Structure of the Type-II Weyl Semimetal WTe_{2}

By combining bulk sensitive soft-x-ray angular-resolved photoemission spectroscopy and first-principles calculations we explored the bulk electron states of WTe_{2}, a candidate type-II Weyl semimetal featuring a large nonsaturating magnetoresistance. Despite the layered geometry suggesting a two-dimensional electronic structure, we directly observe a three-dimensional electronic dispersion. We report a band dispersion in the reciprocal direction perpendicular to the layers, implying that electrons can also travel coherently when crossing from one layer to the other. The measured Fermi surface is characterized by two well-separated electron and hole pockets at either side of the Γ point, differently from previous more surface sensitive angle-resolved photoemission spectroscopy experiments that additionally found a pronounced quasiparticle weight at the zone center. Moreover, we observe a significant sensitivity of the bulk electronic structure of WTe_{2} around the Fermi level to electronic correlations and renormalizations due to self-energy effects, previously neglected in first-principles descriptions.