Charge-carrier screening in single-layer graphene

Elucidating the time-dependent charge neutrality point modulation of polymer-coated graphene field-effect transistors in an ambient environment

The charge neutrality point (CNP) is one of the essential parameters in the development of graphene field-effect transistors (GFETs). For GFET with an intrinsic graphene channel layer, the CNP is typically near-zero-volt gate voltage, implying that a well-balanced density of electrons and holes exists in the graphene channel layer. Fabricated GFET, however, typically exhibits CNP that is either positively or negatively shifted from the near-zero-volt gate voltage, implying that the graphene channel layer is unintentionally doped, leading to a unipolar GFET transfer characteristic. Furthermore, the CNP is also modulated in time, indicating that charges are dynamically induced in the graphene channel layer. In this work, understanding and mitigating the CNP shift were attempted by introducing passivation layers made of polyvinyl alcohol and polydimethylsiloxane onto the graphene channel layer. The CNP was found to be negatively shifted, recovered back to near-zero-volt gate voltage, and then positively shifted in time. By analyzing the charge density, carrier mobility, and correlation between the CNP and the charge density, it can be concluded that positive CNP shifts can be attributed to the charge trapping at the graphene/SiO2interface. The negative CNP shift, on the other hand, is caused by dipole coupling between dipoles in the polymer layer and carriers on the surface of the graphene layer. By gaining a deeper understanding of the intricate mechanisms governing the CNP shifts, an ambiently stable GFET suitable for next-generation electronics could be realized.

Ultrafast creation of a light-induced semimetallic state in strongly excited 1T-TiSe2

Screening, a ubiquitous phenomenon associated with the shielding of electric fields by surrounding charges, has been widely adopted as a means to modify a material's properties. While most studies have relied on static changes of screening through doping or gating thus far, here we demonstrate that screening can also drive the onset of distinct quantum states on the ultrafast timescale. By using time- and angle-resolved photoemission spectroscopy, we show that intense optical excitation can drive 1T-TiSe2, a prototypical charge density wave material, almost instantly from a gapped into a semimetallic state. By systematically comparing changes in band structure over time and excitation strength with theoretical calculations, we find that the appearance of this state is likely caused by a dramatic reduction of the screening length. In summary, this work showcases how optical excitation enables the screening-driven design of a nonequilibrium semimetallic phase in TiSe2, possibly providing a general pathway into highly screened phases in other strongly correlated materials.

A Short Overview on Graphene and Graphene-Related Materials for Electrochemical Gas Sensing

The development of new and high-performing electrode materials for sensing applications is one of the most intriguing and challenging research fields. There are several ways to approach this matter, but the use of nanostructured surfaces is among the most promising and highest performing. Graphene and graphene-related materials have contributed to spreading nanoscience across several fields in which the combination of morphological and electronic properties exploit their outstanding electrochemical properties. In this review, we discuss the use of graphene and graphene-like materials to produce gas sensors, highlighting the most relevant and new advancements in the field, with a particular focus on the interaction between the gases and the materials.

Layer-Dependent Interaction Effects in the Electronic Structure of Twisted Bilayer Graphene Devices

Near the magic angle, strong correlations drive many intriguing phases in twisted bilayer graphene (tBG) including unconventional superconductivity and chern insulation. Whether correlations can tune symmetry breaking phases in tBG at intermediate (≳ 2°) twist angles remains an open fundamental question. Here, using ARPES, we study the effects of many-body interactions and displacement field on the band structure of tBG devices at an intermediate (3°) twist angle. We observe a layer- and doping-dependent renormalization of bands at the K points that is qualitatively consistent with moiré models of the Hartree-Fock interaction. We provide evidence of correlation-enhanced inversion symmetry-breaking, manifested by gaps at the Dirac points that are tunable with doping. These results suggest that electronic interactions play a significant role in the physics of tBG even at intermediate twist angles and present a new pathway toward engineering band structure and symmetry-breaking phases in moiré heterostructures.

Thickness-Dependent Evolutions of Surface Reconstruction and Band Structures in Epitaxial β-In2Se3 Thin Films

Ferroelectric materials have received great attention in the field of data storage, benefiting from their exotic transport properties. Among these materials, the two-dimensional (2D) In₂Se₃ has been of particular interest because of its ability to exhibit both in-plane and out-of-plane ferroelectricity. In this article, we realized the molecular beam epitaxial (MBE) growth of β-In₂Se₃ films on bilayer graphene (BLG) substrates with precisely controlled thickness. Combining in situ scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) measurements, we found that the four-monolayer β-In₂Se₃ is a semiconductor with a (9 × 1) reconstructed superlattice. In contrast, the monolayer β-In₂Se₃/BLG heterostructure does not show any surface reconstruction due to the interfacial interaction and moiré superlattice, which instead results in a folding Dirac cone at the center of the Brillouin zone. In addition, we found that the band gap of In₂Se₃ film decreases after potassium doping on its surface, and the valence band maximum also shifts in momentum after surface potassium doping. The successful growth of high-quality β-In₂Se₃ thin films would be a new platform for studying the 2D ferroelectric heterostructures and devices. The experimental results on the surface reconstruction and band structures also provide important information on the quantum confinement and interfacial effects in the epitaxial β-In₂Se₃ films.

Suppression of Intervalley Coupling in Graphene via Potassium Doping

The quantum interference patterns induced by impurities in graphene can form the (√3 × √3)R30° superlattice with intervalley scattering. This superlattice can lead to the folded Dirac cone at the center of Brillouin zone by coupling two non-equivalent valleys. Using angle-resolved photoemission spectroscopy (ARPES), we report the observation of suppression of the folded Dirac cone in mono- and bilayer graphene upon potassium doping. The intervalley coupling with chiral symmetry broken can persist upon a light potassium-doped level but be ruined at the heavily doped level. Meanwhile, the folded Dirac cone can be suppressed by the renormalization of the Dirac band with potassium doping. Our results demonstrate that the suppression of the intervalley scattering pattern by potassium doping could pave the way toward the realization of novel chiraltronic devices in superlattice graphene.

Anomalies at the Dirac Point in Graphene and Its Hole-Doped Compositions

We study the properties of the Dirac states in SiC-graphene and its hole-doped compositions employing angle-resolved photoemission spectroscopy and density functional theory. The symmetry-selective measurements for the Dirac bands reveal their linearly dispersive behavior across the Dirac point which was termed as the anomalous region in earlier studies. No gap is observed even after boron substitution that reduced the carrier concentration significantly from 3.7×10^{13}  cm^{-2} in SiC-graphene to 0.8×10^{13}  cm^{-2} (5% doping). The anomalies at the Dirac point are attributed to the spectral width arising from the lifetime and momentum broadening in the experiments. The substitution of boron at the graphitic sites leads to a band renormalization and a shift of the Dirac point towards the Fermi level. The internal symmetries appear to be preserved in SiC-graphene even after significant boron substitutions. These results suggest that SiC-graphene is a good platform to realize exotic science as well as advanced technology where the carrier properties like concentration, mobility, etc., can be tuned keeping the Dirac fermionic properties protected.

Quantum Sensing of Thermoelectric Power in Low-Dimensional Materials

Thermoelectric power, has been extensively studied in low-dimensional materials where quantum confinement and spin textures can largely modulate thermopower generation. In addition to classical and macroscopic values, thermopower also varies locally over a wide range of length scales, and is fundamentally linked to electron wave functions and phonon propagation. Various experimental methods for the quantum sensing of localized thermopower have been suggested, particularly based on scanning probe microscopy. Here, critical advances in the quantum sensing of thermopower are introduced, from the atomic to the several-hundred-nanometer scales, including the unique role of low-dimensionality, defects, spins, and relativistic effects for optimized power generation. Investigating the microscopic nature of thermopower in quantum materials can provide insights useful for the design of advanced materials for future thermoelectric applications. Quantum sensing techniques for thermopower can pave the way to practical and novel energy devices for a sustainable society.

Direct Observation of Global Elastic Intervalley Scattering Induced by Impurities on Graphene

The scattering process induced by impurities in graphene plays a key role in transport properties. Especially, the disorder impurities can drive the ordered state with a hexagonal superlattice on graphene by electron-mediated interaction at a transition temperature. Using angle-resolved photoemission spectroscopy (ARPES), we reveal that the epitaxial monolayer and bilayer graphene with various impurities display global elastic intervalley scattering and quantum interference below the critical temperature (34 K), which leads to a set of new folded Dirac cones at the Brillouin-zone center by mixing two inequivalent Dirac cones. The Dirac electrons generated from intervalley scattering without chirality can be due to the breaking of the sublattice symmetry. In addition, the temperature-dependent ARPES measurements indicate the thermal damping of quantum interference patterns from Dirac electron scattering on impurities. Our results demonstrate that the electron scattering and interference induced by impurities can completely modulate the Dirac bands of graphene.

Electrostatic image force energy for charges in three-layer structures: exact formulas and their approximations

The problem of image force energyW(Z) in three-layer plane structures, whereZis the coordinate perpendicular to the layers, has been reconsidered. In the classical electrostatic limit, where the dielectric permittivitiesɛ_iof all structure components (i= 1, 2, 3) are constants, the exact general dependencesW(Z) were obtained for each layer and anyɛ_i-combination in terms of the Lerch transcendent function. For certain combinations ofɛ_i, an ion adsorption minimum was found to arise in one of the covers far from the interlayer. Some other combinations ofɛ_ican lead to the appearance of a potential barrier, which does not permit a free charge existing in the cover to approach the interlayer, although it will be attracted to the interlayer in the close vicinity of the latter. For symmetric structures (ɛ₁=ɛ₃), the asymptotic behavior ofW(Z→∞)was shown to beZ-2rather thanZ-1, as it takes place in the two-layer case. Simple approximate analytical formulas that describeW(Z) and possess high accuracy for arbitrary relationships among theɛ_i-constants were proposed.

Harnessing Thermoelectric Puddles via the Stacking Order and Electronic Screening in Graphene

Thermoelectricity has been investigated mostly on the macroscopic scale despite the fact that its origin is linked to the local electronic band structure of materials. While the role of thermopower from microscopic structures (e.g., surfaces or grain boundaries) increases for emerging thermoelectric materials, manipulating thermoelectric puddles, spatially varying levels of thermoelectric power on the nanometer scale, remains unexplored. Here, we illustrate thermoelectric puddles that can be harnessed via the stacking order and electronic screening in graphene. The local thermoelectric elements were investigated by gate-tunable scanning thermoelectric microscopy on the atomic scale, revealing the roles of local lattice symmetry, impurity charge scatterings, and mechanical strains in the thermopower system. The long-range screening of electrons at the Dirac point in graphene, which could be reached by in-operando spectroscopy, allowed us to unveil distinct thermoelectric puddles in the graphene that are susceptible to the stacking order and external strain. Thus, manipulating thermoelectric puddles via a lattice symmetry and electronic engineering will realize practical thermopower systems with low-dimensional materials.

Stacking-configuration-enriched essential properties of bilayer graphenes and silicenes

First-principles calculations show that the geometric and electronic properties of silicene-related systems have diversified phenomena. Critical factors of group-IV monoelements, like buckled/planar structures, stacking configurations, layer numbers, and van der Waals interactions of bilayer composites, are considered simultaneously. The theoretical framework developed provides a concise physical and chemical picture. Delicate evaluations and analyses have been made on the optimal lattices, energy bands, and orbital-projected van Hove singularities. They provide decisive mechanisms, such as buckled/planar honeycomb lattices, multi-/single-orbital hybridizations, and significant/negligible spin-orbital couplings. We investigate the stacking-configuration-induced dramatic transformations of essential properties by relative shift in bilayer graphenes and silicenes. The lattice constant, interlayer distance, buckling height, and total energy essentially depend on the magnitude and direction of the relative shift: AA → AB → AA' → AA. Apparently, sliding bilayer systems are quite different between silicene and graphene in terms of geometric structures, electronic properties, orbital hybridizations, interlayer hopping integrals, and spin interactions.

Fundamental Properties of Metal-Adsorbed Silicene: A DFT Study

Sodium, magnesium, and aluminum adatoms, which possess one, two, and three valence electrons, respectively, in terms of 3s, 3s², and (3s², 3p) orbitals, are very suitable for helping us understand adsorption-induced diverse phenomena. In this work, the revealing properties of metal (Na/Mg/Al)-adsorbed graphene systems are investigated by means of the first-principles method. The single- and double-sided chemisorption cases, the various adatom concentrations, the hollow/top/valley/bridge sites, and the buckled structures are taken into account. The hollow and valley adsorptions that correspond to the Na/Mg and Al cases, respectively, create extremely nonuniform environments. This leads to diverse orbital hybridizations in Na/Mg/Al-Si bonds, as indicated by the Na/Mg/Al-dominated bands, as well as the spatial charge density distributions and the orbital-projected density of states (DOS). Out of three types of metal-adatom adsorptions, the Al-adsorption configurations produce the strongest chemical modifications. The ferromagnetic configurations have been shown to survive only in specific Mg and Al adsorptions, but not in the Na cases. The presented theoretical predictions could be verified experimentally, and potential applications are discussed. Additionally, important similarities and differences with graphene-related systems are examined.

Asymmetry-enriched electronic and optical properties of bilayer graphene

The electronic and optical response of Bernal stacked bilayer graphene with geometry modulation and gate voltage are studied. The broken symmetry in sublattices, one dimensional periodicity perpendicular to the domain wall and out-of-plane axis introduces substantial changes of wavefunctions, such as gapless topological protected states, standing waves with bonding and anti-bonding characteristics, rich structures in density of states and optical spectra. The wavefunctions present well-behaved standing waves in pure system and complicated node structures in geometry-modulated system. The optical absorption spectra show forbidden optical excitation channels, prominent asymmetric absorption peaks, and dramatic variations in absorption structures. These results provide that the geometry-modulated structure with tunable gate voltage could be used for electronic and optical manipulation in future graphene-based devices.

Sensitive Raman Probe of Electronic Interactions between Monolayer Graphene and Substrate under Electrochemical Potential Control

In situ electrochemical Raman spectroscopic measurements of defect-free monolayer graphene on various substrates were performed under electrochemical potential control. The G and 2D Raman band wavenumbers (ω_G, ω_2D) of graphene were found to depend upon the electrochemical potential, i.e., the charge density of graphene. The values of ω_G and ω_2D also varied depending on the choice of substrates. On metal substrates where graphene was synthesized by chemical vapor deposition, a strong blue shift of ω_2D was induced, which could not account for the strain and charge doping. We attributed the blue shift of ω_2D to a change in the electronic properties of graphene induced by distinct electronic interactions with the metal substrates. To explain the unique characteristics in the Raman spectrum of graphene on various substrates, a novel mechanism is proposed considering reduction of the Fermi velocity in graphene owing to dielectric screening from the metal substrates.

Capped carbon nanotubes with a number of ground state magnetization discontinuities increasing with their size

The classical ground state magnetic response of fullerene molecules that resemble capped carbon nanotubes is calculated within the framework of the antiferromagnetic Heisenberg model. It is found that the magnetic response depends subtly on spatial symmetry and chirality. Clusters based on armchair carbon nanotubes which are capped with non-neighboring pentagons and have D _5d spatial symmetry have a number of magnetization discontinuities which increases with their size. This occurs even though the model completely lacks magnetic anisotropy, and even though the only source of frustration are the two groups of six pentagons located at the ends of the molecules, which become more strongly outnumbered as the clusters are filled in the middle with more unfrustrated hexagons with increasing size. For the cluster with 180 vertices there are already seven magnetization and one susceptibility discontinuities. Contrary to that, similar molecules which have D _5h spatial symmetry reach a limit of one magnetization and two susceptibility ground state discontinuities, while fullerene molecules based on zigzag carbon nanotubes and capped by neighboring pentagons also reach a fixed number of discontinuities with increasing size.

Optical properties of monolayer tinene in electric fields

The absorption spectra of monolayer tinene in perpendicular electric fields are studied by the tight-binding model. There are three kinds of special structures, namely shoulders, logarithmical symmetric peaks and asymmetric peaks in the square-root form, corresponding to the optical excitations of the extreme points, saddle points and constant-energy loops. With the increasing field strength, two splitting shoulder structures, which are dominated by the parabolic bands of 5p z orbitals, come to exist because of the spin-split energy bands. The frequency of threshold shoulder declines to zero and then linearly grows. The third shoulder at 0.75~0.85 eV mainly comes from (5p x , 5p y ) orbitals. The former and the latter orbitals, respectively, create the saddle-point symmetric peaks near the M point, while they hybridize with one another to generate the loop-related asymmetric peaks. Tinene quite differs from graphene, silicene, and germanene. The special relationship among the multi-orbital chemical bondings, spin-orbital couplings and Coulomb potentials accounts for the feature-rich optical properties.

Alkali-created rich properties in grapheme nanoribbons: Chemical bondings

The alkali-adsorbed graphene nanoribbons exhibit the feature-rich electronic and magnetic properties. From the first-principles calculations, there are only few adatom-dominated conduction bands, and the other conduction and valence bands are caused by carbon atoms. A lot of free electrons are revealed in the occupied alkali- and carbon-dependent conduction bands. Energy bands are sensitive to the concentration, distribution and kind of adatom and the edge structure, while the total linear free carrier density only relies on the first one. These mainly arise from a single s − 2p_z orbital hybridization in the adatom-carbon bond. Specifically, zigzag systems can present the anti-ferromagnetic ordering across two edges, ferromagnetic ordering along one edge and non-magnetism, being reflected in the edge-localized energy bands with or without spin splitting. The diverse energy dispersions contribute many special peaks in density of states. The critical chemical bonding and the distinct spin configuration could be verified from the experimental measurements.

Defect engineering as a versatile route to estimate various scattering mechanisms in monolayer graphene on solid substrates

It is known that the experimental conditions and growth methods determine the different carrier scatterings responsible for large variation of carrier mobility in graphene monolayers. Here we present a systematic investigation on various possible scattering mechanisms responsible for limiting the carrier mobility in graphene on a solid substrate, like SiO2. This has been possible by defect engineering in graphene monolayers obtained by liquid phase exfoliation of graphite in polar and non-polar solvents with the dielectric constant varying from 2.5 to 64. Lattice defects in graphene monolayers have been characterized by scanning tunnelling microscopy and Raman spectroscopy. Correlation between the results obtained from electrical measurements and the information obtained from Raman spectra have revealed different scattering mechanisms responsible for deciding the carrier mobility. It has been shown that remote interfacial phonons in SiO2 are responsible for limiting the carrier mobility at room temperature whereas, substrate impurities and Raman active point defects in the graphene lattice are the dominant scatterers for limiting the mobility at low temperatures.

Long- versus Short-Range Scattering in Doped Epitaxial Graphene

Tuning the electronic properties of graphene by adatom deposition unavoidably introduces disorder into the system, which directly affects the single-particle excitations and electrodynamics. Using angle-resolved photoemission spectroscopy (ARPES) we trace the evolution of disorder in graphene by thallium adatom deposition and probe its effect on the electronic structure. We show that the signatures of quasiparticle scattering in the photoemission spectral function can be used to identify thallium adatoms, although charged, as efficient short-range scattering centers. Employing a self-energy model for short-range scattering, we are able to extract a δ-like scattering potential δ = -3.2 ± 1 eV. Therefore, isolated charged scattering centers do not necessarily act just as good long-range (Coulomb) scatterers but can also act as efficient short-range (δ-like) scatterers; in the case of thallium, this happens with almost equal contributions from both mechanisms.

Direct observation of Dirac cone in multilayer silicene intercalation compound CaSi2

Calcium-intercalated multilayer silicene CaSi2 exhibits a massless Dirac-cone π-electron-band dispersion like graphene, while the Dirac point is about 2 eV away from the Fermi level due to diiimide-based charge transfer from the Ca atoms to the silicene layers. This indicates that the graphene-like electronic structure with a massless Dirac cone is stably formed in the metal-intercalated multilayer silicene.