Light-Activated Gigahertz Ferroelectric Domain Dynamics

Sub-Nanosecond Reconfiguration of Ferroelectric Domains in Bismuth Ferrite

Domain switching is crucial for achieving desired functions in ferroic materials that are used in various applications. Fast control of domains at sub-nanosecond timescales remains a challenge despite its potential for high-speed operation in random-access memories, photonic, and nanoelectronic devices. Here, ultrafast laser excitation is shown to transiently melt and reconfigure ferroelectric stripe domains in multiferroic bismuth ferrite on a timescale faster than 100 picoseconds. This dynamic behavior is visualized by picosecond- and nanometer-resolved X-ray diffraction and time-resolved X-ray diffuse scattering. The disordering of stripe domains is attributed to the screening of depolarization fields by photogenerated carriers resulting in the formation of charged domain walls, as supported by phase-field simulations. Furthermore, the recovery of disordered domains exhibits subdiffusive growth on nanosecond timescales, with a non-equilibrium domain velocity reaching up to 10 m s-1 . These findings present a new approach to image and manipulate ferroelectric domains on sub-nanosecond timescales, which can be further extended into other complex photoferroic systems to modulate their electronic, optical, and magnetic properties beyond gigahertz frequencies. This approach could pave the way for high-speed ferroelectric data storage and computing, and, more broadly, defines new approaches for visualizing the non-equilibrium dynamics of heterogeneous and disordered materials.

Probing Ultrafast Dynamics of Ferroelectrics by Time-Resolved Pump-Probe Spectroscopy

Ferroelectric materials have been a key research topic owing to their wide variety of modern electronic and photonic applications. For the quick exploration of higher operating speed, smaller size, and superior efficiencies of novel ferroelectric devices, the ultrafast dynamics of ferroelectrics that directly reflect their respond time and lifetimes have drawn considerable attention. Driven by time-resolved pump-probe spectroscopy that allows for probing, controlling, and modulating dynamic processes of ferroelectrics in real-time, much research efforts have been made to understand and exploit the ultrafast dynamics of ferroelectric. Herein, the current state of ultrafast dynamic features of ferroelectrics tracked by time-resolved pump-probe spectroscopy is reviewed, which includes ferroelectrics order parameters of polarization, lattice, spin, electronic excitation, and their coupling. Several potential perspectives and possible further applications combining ultrafast pump-probe spectroscopy and ferroelectrics are also presented. This review offers a clear guidance of ultrafast dynamics of ferroelectric orders, which may promote the rapid development of next-generation devices.

Dynamic Tilting of Ferroelectric Domain Walls Caused by Optically Induced Electronic Screening

Optical excitation perturbs the balance of phenomena selecting the tilt orientation of domain walls within ferroelectric thin films. The high carrier density induced in a low-strain BaTiO_{3} thin film by an above-band-gap ultrafast optical pulse changes the tilt angle that 90° a/c domain walls form with respect to the substrate-film interface. The dynamics of the changes are apparent in time-resolved synchrotron x-ray scattering studies of the domain diffuse scattering. Tilting occurs at 298 K, a temperature at which the a/b and a/c domain phases coexist but is absent at 343 K in the better ordered single-phase a/c regime. Phase coexistence at 298 K leads to increased domain-wall charge density, and thus a larger screening effect than in the single-phase regime. The screening mechanism points to new directions for the manipulation of nanoscale ferroelectricity.

Why is my image noisy? A look into the terms contributing to a time-resolved X-ray microscopy image

Through Monte Carlo simulations, we investigate how various experimental parameters can influence the quality of time-resolved scanning transmission X-ray microscopy images. In particular, the effect of the X-ray photon flux, of the thickness of the investigated samples, and of the frequency of the dynamical process under investigation on the resulting time-resolved image are investigated. The ideal sample and imaging conditions that allow for an optimal image quality are then identifed.

In situmonitoring of epitaxial ferroelectric thin-film growth

In ferroelectric thin films, the polarization state and the domain configuration define the macroscopic ferroelectric properties such as the switching dynamics. Engineering of the ferroelectric domain configuration during synthesis is in permanent evolution and can be achieved by a range of approaches, extending from epitaxial strain tuning over electrostatic environment control to the influence of interface atomic termination. Exotic polar states are now designed in the technologically relevant ultrathin regime. The promise of energy-efficient devices based on ultrathin ferroelectric films depends on the ability to create, probe, and manipulate polar states in ever more complex epitaxial architectures. Because most ferroelectric oxides exhibit ferroelectricity during the epitaxial deposition process, the direct access to the polarization emergence and its evolution during the growth process, beyond the realm of existing structuralin situdiagnostic tools, is becoming of paramount importance. We review the recent progress in the field of monitoring polar states with an emphasis on the non-invasive probes allowing investigations of polarization during the thin film growth of ferroelectric oxides. A particular importance is given to optical second harmonic generationin situ. The ability to determine the net polarization and domain configuration of ultrathin films and multilayers during the growth of multilayers brings new insights towards a better understanding of the physics of ultrathin ferroelectrics and further control of ferroelectric-based heterostructures for devices.

Non-volatile optical switch of resistance in photoferroelectric tunnel junctions

In the quest for energy efficient and fast memory elements, optically controlled ferroelectric memories are promising candidates. Here, we show that, by taking advantage of the imprint electric field existing in the nanometric BaTiO3 films and their photovoltaic response at visible light, the polarization of suitably written domains can be reversed under illumination. We exploit this effect to trigger and measure the associate change of resistance in tunnel devices. We show that engineering the device structure by inserting an auxiliary dielectric layer, the electroresistance increases by a factor near 2 × 103%, and a robust electric and optic cycling of the device can be obtained mimicking the operation of a memory device under dual control of light and electric fields.

Domain Dynamics under Ultrafast Electric-Field Pulses

Exploring the dynamic responses of a material is of importance to both understanding its fundamental physics at high frequencies and potential device applications. Here we develop a phase-field model for predicting the dynamics of ferroelectric materials and study the dynamic responses of ferroelectric domains and domain walls subjected to an ultrafast electric-field pulse. We discover a transition of domain evolution mechanisms from pure domain growth at a relatively low field to combined nucleation and growth of domains at a high field. We derive analytical models for the two regimes which allow us to extract the effective mass and damping coefficient of ferroelectric domain walls. The exhibition of two regimes for the ferroelectric domain dynamics at low and high electric fields is expected to be a general phenomenon that would appear for ferroic domains under other ultrafast stimuli. The present Letter also offers a general framework for studying domain dynamics and obtaining fundamental properties of domain walls and thus for manipulating the dynamic functionalities of ferroelectric materials.

Unexpected Giant Microwave Conductivity in a Nominally Silent BiFeO3 Domain Wall

Nanoelectronic devices based on ferroelectric domain walls (DWs), such as memories, transistors, and rectifiers, have been demonstrated in recent years. Practical high-speed electronics, on the other hand, usually demand operation frequencies in the gigahertz (GHz) regime, where the effect of dipolar oscillation is important. Herein, an unexpected giant GHz conductivity on the order of 10³ S m^-1 is observed in certain BiFeO₃ DWs, which is about 100 000 times greater than the carrier-induced direct current (dc) conductivity of the same walls. Surprisingly, the nominal configuration of the DWs precludes the alternating current (ac) conduction under an excitation electric field perpendicular to the surface. Theoretical analysis shows that the inclined DWs are stressed asymmetrically near the film surface, whereas the vertical walls in a control sample are not. The resultant imbalanced polarization profile can then couple to the out-of-plane microwave fields and induce power dissipation, which is confirmed by the phase-field modeling. Since the contributions from mobile-carrier conduction and bound-charge oscillation to the ac conductivity are equivalent in a microwave circuit, the research on local structural dynamics may open a new avenue to implement DW nano-devices for radio-frequency applications.

Measurements of Nonlinear Polarization Dynamics in the Tens of Gigahertz

Frequency-dependent linear-permittivity measurements are commonplace in the literature, providing key insights into the structure of dielectric materials. These measurements describe a material's dynamic response to a small applied electric field. However, nonlinear dielectric materials are widely used for their responses to large applied fields, including switching in ferroelectric materials, and field tuning of the permittivity in paraelectric materials. These behaviors are described by nonlinear permittivity. Nonlinear-permittivity measurements are fraught with technical challenges because of the complex electrical coupling between a sample and its environment. Here, we describe a technique for measuring the complex nonlinear permittivity that circumvents many of the difficulties associated with other approaches. We validate this technique by measuring the nonlinear permittivity of a tunable B a 0.5 S r 0.5 T i O 3 thin film up to 40 GHz and comparing our results with a phenomenological model. These measurements provide insight into the dynamics of nonlinear dielectric materials down to picosecond timescales.

Electric-Field-Driven Nanosecond Ferroelastic-Domain Switching Dynamics in Epitaxial Pb(Zr,Ti)O_{3} Film

Epitaxial oxide ferroelectric films exhibit emerging phenomena arising from complex domain configurations even at pseudoequilibrium, including the creation of domain states unfavored in nature and abrupt piezoelectric coefficients around morphotropic phase boundaries. The nanometer-sized domain configurations and their domain switching dynamics under external stimuli are directly linked to the ultrafast manipulation of ferroelectric thin films; however, complex domain switching dynamics under homogeneous electric fields has not been fully explored, especially at the nanosecond timescale. This Letter reports the nanosecond dynamics of ferroelastic-domain switching from the 90° to 180° direction using time-resolved x-ray microdiffraction under homogeneous electric fields onto an epitaxial Pb(Zr_{0.35},Ti_{0.65})O_{3} film capacitor. It is found that the application of electric fields induces spatially heterogeneous domain switching processes via intermediate domain structures with rotated polarization vectors. In addition, the domain switching time is shown to be inversely proportional to the magnitude of the applied electric field, and electric fields higher than 480  kV/cm are found to complete the ferroelastic switching within nanoseconds.

Indirect but Efficient: Laser-Excited Electrons Can Drive Ultrafast Polarization Switching in Ferroelectric Materials

To enhance the efficiency of next-generation ferroelectric (FE) electronic devices, new techniques for controlling ferroelectric polarization switching are required. While most prior studies have attempted to induce polarization switching via the excitation of phonons, these experimental techniques required intricate and expensive terahertz sources and have not been completely successful. Here, we propose a new mechanism for rapidly and efficiently switching the FE polarization via laser-tuning of the underlying dynamical potential energy surface. Using time-dependent density functional calculations, we observe an ultrafast switching of the FE polarization in BaTiO₃ within 200 fs. A laser pulse can induce a charge density redistribution that reduces the original FE charge order. This excitation results in both desirable and highly directional ionic forces that are always opposite to the original FE displacements. Our new mechanism enables the reversible switching of the FE polarization with optical pulses that can be produced from existing 800 nm experimental laser sources.

Photo-Controlled Ferroelectric-Based Nanoactuators

Finding a feasible principle for a future generation of nano-optomechanical systems is a matter of intensive research, because it may provide new device prospects for optoelectronics and nanomanipulation techniques. Here we show that the strain of a ferroelectric crystal can be manipulated to achieve macroscopic, stable, and reproducible dimensional changes using illumination with photon energy below the material bandgap. The photoresponse can be activated without direct light incidence on the actuation area, because the cooperative nature of the phenomenon extends the photoinduced strain to the whole material. These results may be useful for developing the next generation of high-efficiency photocontrolled ferroelectric devices.

Light-Induced Capacitance Tunability in Ferroelectric Crystals

The remote controlling of ferroic properties with light is nowadays a hot and highly appealing topic in materials science. Here, we shed light on some of the unresolved issues surrounding light-matter coupling in ferroelectrics. Our findings show that the capacitance and, consequently, its related intrinsic material property, i.e., the dielectric constant, can be reversibly adjusted through the light power control. High photodielectric performance is exhibited across a wide range of the visible light wavelength because of the wavelength-independence of the phenomenon. We have verified that this counterintuitive behavior can be strongly ascribed to the existence of "locally free charges" at domain wall.