Atomic Source of Single Photons in the Telecom Band

Nanocavity-Mediated Purcell Enhancement of Er in TiO2 Thin Films Grown via Atomic Layer Deposition

The use of trivalent erbium (Er3+), typically embedded as an atomic defect in the solid-state, has widespread adoption as a dopant in telecommunication devices and shows promise as a spin-based quantum memory for quantum communication. In particular, its natural telecom C-band optical transition and spin-photon interface make it an ideal candidate for integration into existing optical fiber networks without the need for quantum frequency conversion. However, successful scaling requires a host material with few intrinsic nuclear spins, compatibility with semiconductor foundry processes, and straightforward integration with silicon photonics. Here, we present Er-doped titanium dioxide (TiO2) thin film growth on silicon substrates using a foundry-scalable atomic layer deposition process with a wide range of doping controls over the Er concentration. Even though the as-grown films are amorphous after oxygen annealing, they exhibit relatively large crystalline grains, and the embedded Er ions exhibit the characteristic optical emission spectrum from anatase TiO2. Critically, this growth and annealing process maintains the low surface roughness required for nanophotonic integration. Finally, we interface Er ensembles with high quality factor Si nanophotonic cavities via evanescent coupling and demonstrate a large Purcell enhancement (≈300) of their optical lifetime. Our findings demonstrate a low-temperature, nondestructive, and substrate-independent process for integrating Er-doped materials with silicon photonics. At high doping densities this platform can enable integrated photonic components such as on-chip amplifiers and lasers, while dilute concentrations can realize single ion quantum memories.

Photoionisation detection of a single Er3+ ion with sub-100-ns time resolution

Efficient detection of single optical centres in solids is essential for quantum information processing, sensing and single-photon generation applications. In this work, we use radio-frequency (RF) reflectometry to electrically detect the photoionisation induced by a single Er3+ ion in Si. The high bandwidth and sensitivity of the RF reflectometry provide sub-100-ns time resolution for the photoionisation detection. With this technique, the optically excited state lifetime of a single Er3+ ion in a Si nano-transistor is measured for the first time to be [Formula: see text]s. Our results demonstrate an efficient approach for detecting a charge state change induced by Er excitation and relaxation. This approach could be used for fast readout of other single optical centres in solids and is attractive for large-scale integrated optical quantum systems thanks to the multi-channel RF reflectometry demonstrated with frequency multiplexing techniques.

Engineering colloidal semiconductor nanocrystals for quantum information processing

Quantum information processing-which relies on spin defects or single-photon emission-has shown quantum advantage in proof-of-principle experiments including microscopic imaging of electromagnetic fields, strain and temperature in applications ranging from battery research to neuroscience. However, critical gaps remain on the path to wider applications, including a need for improved functionalization, deterministic placement, size homogeneity and greater programmability of multifunctional properties. Colloidal semiconductor nanocrystals can close these gaps in numerous application areas, following years of rapid advances in synthesis and functionalization. In this Review, we specifically focus on three key topics: optical interfaces to long-lived spin states, deterministic placement and delivery for sensing beyond the standard quantum limit, and extensions to multifunctional colloidal quantum circuits.

Cavity-coupled telecom atomic source in silicon

Novel T centers in silicon hold great promise for quantum networking applications due to their telecom band optical transitions and the long-lived ground state electronic spins. An open challenge for advancing the T center platform is to enhance its weak and slow zero phonon line (ZPL) emission. In this work, by integrating single T centers with a low-loss, small mode-volume silicon photonic crystal cavity, we demonstrate an enhancement of the fluorescence decay rate by a factor of F = 6.89. Efficient photon extraction enables the system to achieve an average ZPL photon outcoupling rate of 73.3 kHz under saturation, which is about two orders of magnitude larger than the previously reported value. The dynamics of the coupled system is well modeled by solving the Lindblad master equation. These results represent a significant step towards building efficient T center spin-photon interfaces for quantum information processing and networking applications.

Corner Reflectors: Fractal Analysis and Integrated Single-Photon Sources

In this work, the properties of the radiation emitted by a corner reflector with an electric dipole feeder are analyzed in the optical domain, where the distance between the dipole and the corner apex can be large in terms of the wavelength. A comprehensive study of the fractal properties of the radiated intensity patterns is presented. The use of this setup for the realization of single-photon sources in photonic integrated circuits is also put forward, and a detailed study of the emission properties of the device and its optimal configurations is presented.

Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide

Spin-active quantum emitters have emerged as a leading platform for quantum technologies. However, one of their major limitations is the large spread in optical emission frequencies, which typically extends over tens of GHz. Here, we investigate single V4+ vanadium centres in 4H-SiC, which feature telecom-wavelength emission and a coherent S = 1/2 spin state. We perform spectroscopy on single emitters and report the observation of spin-dependent optical transitions, a key requirement for spin-photon interfaces. By engineering the isotopic composition of the SiC matrix, we reduce the inhomogeneous spectral distribution of different emitters down to 100 MHz, significantly smaller than any other single quantum emitter. Additionally, we tailor the dopant concentration to stabilise the telecom-wavelength V4+ charge state, thereby extending its lifetime by at least two orders of magnitude. These results bolster the prospects for single V emitters in SiC as material nodes in scalable telecom quantum networks.

Coherent light scattering from a telecom C-band quantum dot

Quantum networks have the potential to transform secure communication via quantum key distribution and enable novel concepts in distributed quantum computing and sensing. Coherent quantum light generation at telecom wavelengths is fundamental for fibre-based network implementations, but Fourier-limited emission and subnatural linewidth photons have so far only been reported from systems operating in the visible to near-infrared wavelength range. Here, we use InAs/InP quantum dots to demonstrate photons with coherence times much longer than the Fourier limit at telecom wavelength via elastic scattering of excitation laser photons. Further, we show that even the inelastically scattered photons have coherence times within the error bars of the Fourier limit. Finally, we make direct use of the minimal attenuation in fibre for these photons by measuring two-photon interference after 25 km of fibre, demonstrating finite interference visibility for photons emitted about 100,000 excitation cycles apart.

Frequency Tunable, Cavity-Enhanced Single Erbium Quantum Emitter in the Telecom Band

Single quantum emitters embedded in solid-state hosts are an ideal platform for realizing quantum information processors and quantum network nodes. Among the currently investigated candidates, Er^{3+} ions are particularly appealing due to their 1.5  μm optical transition in the telecom band as well as their long spin coherence times. However, the long lifetimes of the excited state-generally in excess of 1 ms-along with the inhomogeneous broadening of the optical transition result in significant challenges. Photon emission rates are prohibitively small, and different emitters generally create photons with distinct spectra, thereby preventing multiphoton interference-a requirement for building large-scale, multinode quantum networks. Here we solve this challenge by demonstrating for the first time linear Stark tuning of the emission frequency of a single Er^{3+} ion. Our ions are embedded in a lithium niobate crystal and couple evanescently to a silicon nanophotonic crystal cavity that provides a strong increase of the measured decay rate. By applying an electric field along the crystal c axis, we achieve a Stark tuning greater than the ion's linewidth without changing the single-photon emission statistics of the ion. These results are a key step towards rare earth ion-based quantum networks.

X-ray Spectroscopy of a Rare-Earth Molecular System Measured at the Single Atom Limit at Room Temperature

We investigate the limit of X-ray detection at room temperature on rare-earth molecular films using lanthanum and a pyridine-based dicarboxamide organic linker as a model system. Synchrotron X-ray scanning tunneling microscopy is used to probe the molecules with different coverages on a HOPG substrate. X-ray-induced photocurrent intensities are measured as a function of molecular coverage on the sample, allowing a correlation of the amount of La ions with the photocurrent signal strength. X-ray absorption spectroscopy shows cogent M4,5 absorption edges of the lanthanum ion originated by the transitions from the 3d3/2 and 3d5/2 to 4f orbitals. X-ray absorption spectra measured in the tunneling regime further reveal an X-ray excited tunneling current produced at the M4,5 absorption edge of the La ion down to the ultimate atomic limit at room temperature.

High-throughput identification of spin-photon interfaces in silicon

Color centers in host semiconductors are prime candidates as spin-photon interfaces for quantum applications. Finding an optimal spin-photon interface in silicon would move quantum information technologies toward a mature semiconducting host. However, the space of possible charged defects is vast, making the identification of candidates from experiments alone extremely challenging. Here, we use high-throughput first-principles computational screening to identify spin-photon interfaces among more than 1000 charged defects in silicon. The use of a single-shot hybrid functional approach is critical in enabling the screening of many quantum defects with a reasonable accuracy. We identify three promising spin-photon interfaces as potential bright emitters in the telecom band: [Formula: see text], [Formula: see text], and [Formula: see text]. These candidates are excited through defect-bound excitons, stressing the importance of such defects in silicon for telecom band operations. Our work paves the way to further large-scale computational screening for quantum defects in semiconductors.

Highly-excited Rydberg excitons in synthetic thin-film cuprous oxide

Cuprous oxide ([Formula: see text]) has recently emerged as a promising material in solid-state quantum technology, specifically for its excitonic Rydberg states characterized by large principal quantum numbers (n). The significant wavefunction size of these highly-excited states (proportional to [Formula: see text]) enables strong long-range dipole-dipole (proportional to [Formula: see text]) and van der Waals interactions (proportional to [Formula: see text]). Currently, the highest-lying Rydberg states are found in naturally occurring [Formula: see text]. However, for technological applications, the ability to grow high-quality synthetic samples is essential. The fabrication of thin-film [Formula: see text] samples is of particular interest as they hold potential for observing extreme single-photon nonlinearities through the Rydberg blockade. Nevertheless, due to the susceptibility of high-lying states to charged impurities, growing synthetic samples of sufficient quality poses a substantial challenge. This study successfully demonstrates the CMOS-compatible synthesis of a [Formula: see text] thin film on a transparent substrate that showcases Rydberg excitons up to [Formula: see text] which is readily suitable for photonic device fabrications. These findings mark a significant advancement towards the realization of scalable and on-chip integrable Rydberg quantum technologies.

Indistinguishable telecom band photons from a single Er ion in the solid state

Atomic defects in the solid state are a key component of quantum repeater networks for long-distance quantum communication1. Recently, there has been significant interest in rare earth ions2-4, in particular Er3+ for its telecom band optical transition5-7 that allows long-distance transmission in optical fibres. However, the development of repeater nodes based on rare earth ions has been hampered by optical spectral diffusion, precluding indistinguishable single-photon generation. Here, we implant Er3+ into CaWO4, a material that combines a non-polar site symmetry, low decoherence from nuclear spins8 and is free of background rare earth ions, to realize significantly reduced optical spectral diffusion. For shallow implanted ions coupled to nanophotonic cavities with large Purcell factor, we observe single-scan optical linewidths of 150 kHz and long-term spectral diffusion of 63 kHz, both close to the Purcell-enhanced radiative linewidth of 21 kHz. This enables the observation of Hong-Ou-Mandel interference9 between successively emitted photons with a visibility of V = 80(4)%, measured after a 36 km delay line. We also observe spin relaxation times T1,s = 3.7 s and T2,s > 200 μs, with the latter limited by paramagnetic impurities in the crystal instead of nuclear spins. This represents a notable step towards the construction of telecom band quantum repeater networks with single Er3+ ions.

Erbium emitters in commercially fabricated nanophotonic silicon waveguides

Quantum memories integrated into nanophotonic silicon devices are a promising platform for large quantum networks and scalable photonic quantum computers. In this context, erbium dopants are particularly attractive, as they combine optical transitions in the telecommunications frequency band with the potential for second-long coherence time. Here, we show that these emitters can be reliably integrated into commercially fabricated low-loss waveguides. We investigate several integration procedures and obtain ensembles of many emitters with an inhomogeneous broadening of <2 GHz and a homogeneous linewidth of <30 kHz. We further observe the splitting of the electronic spin states in a magnetic field up to 9 T that freezes paramagnetic impurities. Our findings are an important step toward long-lived quantum memories that can be fabricated on a wafer-scale using CMOS technology.

Single-electron spin resonance detection by microwave photon counting

Electron spin resonance spectroscopy is the method of choice for characterizing paramagnetic impurities, with applications ranging from chemistry to quantum computing^1,2, but it gives access only to ensemble-averaged quantities owing to its limited signal-to-noise ratio. Single-electron spin sensitivity has, however, been reached using spin-dependent photoluminescence^3-5, transport measurements^6-9 and scanning-probe techniques^10-12. These methods are system-specific or sensitive only in a small detection volume^13,14, so that practical single-spin detection remains an open challenge. Here, we demonstrate single-electron magnetic resonance by spin fluorescence detection¹⁵, using a microwave photon counter at millikelvin temperatures¹⁶. We detect individual paramagnetic erbium ions in a scheelite crystal coupled to a high-quality-factor planar superconducting resonator to enhance their radiative decay rate¹⁷, with a signal-to-noise ratio of 1.9 in one second integration time. The fluorescence signal shows anti-bunching, proving that it comes from individual emitters. Coherence times up to 3 ms are measured, limited by the spin radiative lifetime. The method has the potential to be applied to arbitrary paramagnetic species with long enough non-radiative relaxation times, and allows single-spin detection in a volume as large as the resonator magnetic mode volume (approximately 10 μm³ in the present experiment), orders of magnitude larger than other single-spin detection techniques. As such, it may find applications in magnetic resonance and quantum computing.

Emission enhancement of erbium in a reverse nanofocusing waveguide

Since Purcell's seminal report 75 years ago, electromagnetic resonators have been used to control light-matter interactions to make brighter radiation sources and unleash unprecedented control over quantum states of light and matter. Indeed, optical resonators such as microcavities and plasmonic antennas offer excellent control but only over a limited spectral range. Strategies to mutually tune and match emission and resonator frequency are often required, which is intricate and precludes the possibility of enhancing multiple transitions simultaneously. In this letter, we report a strong radiative emission rate enhancement of Er³⁺-ions across the telecommunications C-band in a single plasmonic waveguide based on the Purcell effect. Our gap waveguide uses a reverse nanofocusing approach to efficiently enhance, extract and guide emission from the nanoscale to a photonic waveguide while keeping plasmonic losses at a minimum. Remarkably, the large and broadband Purcell enhancement allows us to resolve Stark-split electric dipole transitions, which are typically only observed under cryogenic conditions. Simultaneous radiative emission enhancement of multiple quantum states is of great interest for photonic quantum networks and on-chip data communications.

Hybrid Integration of GaP Photonic Crystal Cavities with Silicon-Vacancy Centers in Diamond by Stamp-Transfer

Optically addressable solid-state defects are emerging as some of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate fabrication of gallium phosphide 1-D photonic crystal waveguide cavities on a silicon oxide carrier and subsequent integration with implanted silicon-vacancy (SiV) centers in diamond using a stamp-transfer technique. The stamping process avoids diamond etching and allows fine-tuning of the cavities prior to integration. After transfer to diamond, we measure cavity quality factors (Q) of up to 8900 and perform resonant excitation of single SiV centers coupled to these cavities. For a cavity with a Q of 4100, we observe a 3-fold lifetime reduction on-resonance, corresponding to a maximum potential cooperativity of C = 2. These results indicate promise for high photon-defect interaction in a platform which avoids fabrication of the quantum defect host crystal.

Waveguide-integrated silicon T centres

The performance of modular, networked quantum technologies will be strongly dependent upon the quality of their quantum light-matter interconnects. Solid-state colour centres, and in particular T centres in silicon, offer competitive technological and commercial advantages as the basis for quantum networking technologies and distributed quantum computing. These newly rediscovered silicon defects offer direct telecommunications-band photonic emission, long-lived electron and nuclear spin qubits, and proven native integration into industry-standard, CMOS-compatible, silicon-on-insulator (SOI) photonic chips at scale. Here we demonstrate further levels of integration by characterizing T centre spin ensembles in single-mode waveguides in SOI. In addition to measuring long spin T₁ times, we report on the integrated centres' optical properties. We find that the narrow homogeneous linewidth of these waveguide-integrated emitters is already sufficiently low to predict the future success of remote spin-entangling protocols with only modest cavity Purcell enhancements. We show that further improvements may still be possible by measuring nearly lifetime-limited homogeneous linewidths in isotopically pure bulk crystals. In each case the measured linewidths are more than an order of magnitude lower than previously reported and further support the view that high-performance, large-scale distributed quantum technologies based upon T centres in silicon may be attainable in the near term.

A Telecom O-Band Emitter in Diamond

Color centers in diamond are promising platforms for quantum technologies. Most color centers in diamond discovered thus far emit in the visible or near-infrared wavelength range, which are incompatible with long-distance fiber communication and unfavorable for imaging in biological tissues. Here, we report the experimental observation of a new color center that emits in the telecom O-band, which we observe in silicon-doped bulk single crystal diamonds and microdiamonds. Combining absorption and photoluminescence measurements, we identify a zero-phonon line at 1221 nm and phonon replicas separated by 42 meV. Using transient absorption spectroscopy, we measure an excited state lifetime of around 270 ps and observe a long-lived baseline that may arise from intersystem crossing to another spin manifold.

Controlling single rare earth ion emission in an electro-optical nanocavity

Rare earth emitters enable critical quantum resources including spin qubits, single photon sources, and quantum memories. Yet, probing of single ions remains challenging due to low emission rate of their intra-4f optical transitions. One feasible approach is through Purcell-enhanced emission in optical cavities. The ability to modulate cavity-ion coupling in real-time will further elevate the capacity of such systems. Here, we demonstrate direct control of single ion emission by embedding erbium dopants in an electro-optically active photonic crystal cavity patterned from thin-film lithium niobate. Purcell factor over 170 enables single ion detection, which is verified by second-order autocorrelation measurement. Dynamic control of emission rate is realized by leveraging electro-optic tuning of resonance frequency. Using this feature, storage, and retrieval of single ion excitation is further demonstrated, without perturbing the emission characteristics. These results promise new opportunities for controllable single-photon sources and efficient spin-photon interfaces.

Quasi-BIC Modes in All-Dielectric Slotted Nanoantennas for Enhanced Er3+ Emission

In the quest for new and increasingly efficient photon sources, the engineering of the photonic environment at the subwavelength scale is fundamental for controlling the properties of quantum emitters. A high refractive index particle can be exploited to enhance the optical properties of nearby emitters without decreasing their quantum efficiency, but the relatively modest Q-factors (Q ∼ 5-10) limit the local density of optical states (LDOS) amplification achievable. On the other hand, ultrahigh Q-factors (up to Q ∼ 10⁹) have been reported for quasi-BIC modes in all-dielectric nanostructures. In the present work, we demonstrate that the combination of quasi-BIC modes with high spectral confinement and nanogaps with spacial confinement in silicon slotted nanoantennas lead to a significant boosting of the electromagnetic LDOS in the optically active region of the nanoantenna array. We observe an enhancement of up to 3 orders of magnitude in the photoluminescence intensity and 2 orders of magnitude in the decay rate of the Er³⁺ emission at room temperature and telecom wavelengths. Moreover, the nanoantenna directivity is increased, proving that strong beaming effects can be obtained when the emitted radiation couples to the high Q-factor modes. Finally, via tuning the nanoanntenna aspect ratio, a selective control of the Er³⁺ electric and magnetic radiative transitions can be obtained, keeping the quantum efficiency almost unitary.

Spectral multiplexing of telecom emitters with stable transition frequency

In a quantum network, coherent emitters can be entangled over large distances using photonic channels. In solid-state devices, the required efficient light-emitter interface can be implemented by confining the light in nanophotonic structures. However, fluctuating charges and magnetic moments at the nearby interface then lead to spectral instability of the emitters. Here, we avoid this limitation when enhancing the photon emission up to 70(12)-fold using a Fabry-Perot resonator with an embedded 19-micrometer-thin crystalline membrane, in which we observe around 100 individual erbium emitters. In long-term measurements, they exhibit an exceptional spectral stability of <0.2 megahertz that is limited by the coupling to surrounding nuclear spins. We further implement spectrally multiplexed coherent control and find an optical coherence time of 0.11(1) milliseconds, approaching the lifetime limit of 0.3 milliseconds for the strongest-coupled emitters. Our results constitute an important step toward frequency-multiplexed quantum-network nodes operating directly at a telecommunication wavelength.

Purcell Enhancement of Erbium Ions in TiO2 on Silicon Nanocavities

Isolated solid-state atomic defects with telecom optical transitions are ideal quantum photon emitters and spin qubits for applications in long-distance quantum communication networks. Prototypical telecom defects, such as erbium, suffer from poor photon emission rates, requiring photonic enhancement using resonant optical cavities. Moreover, many of the traditional hosts for erbium ions are not amenable to direct incorporation with existing integrated photonics platforms, limiting scalable fabrication of qubit-based devices. Here, we present a scalable approach toward CMOS-compatible telecom qubits by using erbium-doped titanium dioxide thin films grown atop silicon-on-insulator substrates. From this heterostructure, we have fabricated one-dimensional photonic crystal cavities demonstrating quality factors in excess of 5 × 10⁴ and corresponding Purcell-enhanced optical emission rates of the erbium ensembles in excess of 200. This easily fabricated materials platform represents an important step toward realizing telecom quantum memories in a scalable qubit architecture compatible with mature silicon technologies.

Storage and analysis of light-matter entanglement in a fiber-integrated system

The deployment of a full-fledged quantum internet poses the challenge of finding adequate building blocks for entanglement distribution between remote quantum nodes. A practical system would combine propagation in optical fibers with quantum memories for light, leveraging on the existing communication network while featuring the scalability required to extend to network sizes. Here, we demonstrate a fiber-integrated quantum memory entangled with a photon at telecommunication wavelength. The storage device is based on a fiber-pigtailed laser-written waveguide in a rare earth-doped solid and allows an all-fiber stable addressing of the memory. The analysis of the entanglement is performed using fiber-based interferometers. Our results feature orders-of-magnitude advances in terms of storage time and efficiency for integrated storage of light-matter entanglement and constitute a substantial step forward toward quantum networks using integrated devices.

Optical observation of single spins in silicon

The global quantum internet will require long-lived, telecommunications-band photon-matter interfaces manufactured at scale¹. Preliminary quantum networks based on photon-matter interfaces that meet a subset of these demands are encouraging efforts to identify new high-performance alternatives². Silicon is an ideal host for commercial-scale solid-state quantum technologies. It is already an advanced platform within the global integrated photonics and microelectronics industries, as well as host to record-setting long-lived spin qubits³. Despite the overwhelming potential of the silicon quantum platform, the optical detection of individually addressable photon-spin interfaces in silicon has remained elusive. In this work, we integrate individually addressable 'T centre' photon-spin qubits in silicon photonic structures and characterize their spin-dependent telecommunications-band optical transitions. These results unlock immediate opportunities to construct silicon-integrated, telecommunications-band quantum information networks.

Zeeman and laser site selective spectroscopy of C1point group symmetry Sm3+centres in Y2SiO5: a parametrized crystal-field analysis for the 4f5configuration

Parametrized crystal-field analyses are presented for both the six and seven fold coordinated, C₁symmetry Sm³⁺centres in Y₂SiO₅, based on extensive spectroscopic data spanning the infrared to optical regions. Laser site-selective excitation and fluorescence spectroscopy as well as Zeeman absorption spectroscopy performed along multiple crystallographic directions has been utilized, in addition to previously determinedgtensors for the⁶H_5/2Z₁and⁴G_5/2A₁states. The resultant analyses give good approximation to the experimental energy levels and magnetic splittings, yielding crystal-field parameters consistent with the few other lanthanide ions for which such analyses are available.

Optical Entanglement of Distinguishable Quantum Emitters

Solid-state quantum emitters are promising candidates for the realization of quantum networks, owing to their long-lived spin memories, high-fidelity local operations, and optical connectivity for long-range entanglement. However, due to differences in local environment, solid-state emitters typically feature a range of distinct transition frequencies, which makes it challenging to create optically mediated entanglement between arbitrary emitter pairs. We propose and demonstrate an efficient method for entangling emitters with optical transitions separated by many linewidths. In our approach, electro-optic modulators enable a single photon to herald a parity measurement on a pair of spin qubits. We experimentally demonstrate the protocol using two silicon-vacancy centers in a diamond nanophotonic cavity, with optical transitions separated by 7.4 GHz. Working with distinguishable emitters allows for individual qubit addressing and readout, enabling parallel control and entanglement of both colocated and spatially separated emitters, a key step toward scaling up quantum information processing systems.

On-Demand Integrated Quantum Memory for Polarization Qubits

Photonic polarization qubits are widely used in quantum computation and quantum communication due to the robustness in transmission and the easy qubit manipulation. An integrated quantum memory for polarization qubits is a useful building block for large-scale integrated quantum networks. However, on-demand storing polarization qubits in an integrated quantum memory is a long-standing challenge due to the anisotropic absorption of solids and the polarization-dependent features of microstructures. Here we demonstrate a reliable on-demand quantum memory for polarization qubits, using a depressed-cladding waveguide fabricated in a ^{151}Eu^{3+}:Y_{2}SiO_{5} crystal. The site-2 ^{151}Eu^{3+} ions in Y_{2}SiO_{5} crystal provides a near-uniform absorption for arbitrary polarization states and a new pump sequence is developed to prepare a wideband and enhanced absorption profile. A fidelity of 99.4±0.6% is obtained for the qubit storage process with an input of 0.32 photons per pulse, together with a storage bandwidth of 10 MHz. This reliable integrated quantum memory for polarization qubits reveals the potential for use in the construction of integrated quantum networks.

Time-Resolved Photoionization Detection of a Single Er3+ Ion in Silicon

The detection of charge trap ionization induced by resonant excitation enables spectroscopy on single Er³⁺ ions in silicon nanotransistors. In this work, a time-resolved detection method is developed to investigate the resonant excitation and relaxation of a single Er³⁺ ion in silicon. The time-resolved detection is based on a long-lived current signal with a tunable reset and allows the measurement under stronger and shorter resonant excitation in comparison to time-averaged detection. Specifically, the short-pulse study gives an upper bound of 23.7 μs on the decay time of the ⁴I_13/2 state of the Er³⁺ ion. The fast decay and the tunable reset allow faster repetition of the single-ion detection, which is attractive for implementing this method in large-scale quantum systems of single optical centers. The findings on the detection mechanism and dynamics also provide an important basis for applying this technique to detect other single optical centers in solids.

Parasitic erbium photoluminescence in commercial telecom fiber optical components

Noiseless optical components are critical for applications ranging from metrology to quantum communication. Here, we characterize several commercial telecom C-band fiber components for parasitic noise using a tunable laser. We observe the spectral signature of trace concentrations of erbium in all devices from the underlying optical crystals including YVO₄, LiNbO₃, TeO₂, and amorphous material transmitting infrared radiation glass. Due to the long erbium lifetime, these signals are challenging to mitigate at the single photon level in the telecom range and suggests the need for higher purity optical crystals.

Dynamic control of Purcell enhanced emission of erbium ions in nanoparticles

The interaction of single quantum emitters with an optical cavity enables the realization of efficient spin-photon interfaces, an essential resource for quantum networks. The dynamical control of the spontaneous emission rate of quantum emitters in cavities has important implications in quantum technologies, e.g., for shaping the emitted photons’ waveform or for driving coherently the optical transition while preventing photon emission. Here we demonstrate the dynamical control of the Purcell enhanced emission of a small ensemble of erbium ions doped into a nanoparticle. By embedding the nanoparticles into a fully tunable high finesse fiber based optical microcavity, we demonstrate a median Purcell factor of 15 for the ensemble of ions. We also show that we can dynamically control the Purcell enhanced emission by tuning the cavity on and out of resonance, by controlling its length with sub-nanometer precision on a time scale more than two orders of magnitude faster than the natural lifetime of the erbium ions. This capability opens prospects for the realization of efficient nanoscale quantum interfaces between solid-state spins and single telecom photons with controllable waveform, for non-destructive detection of photonic qubits, and for the realization of quantum gates between rare-earth ion qubits coupled to an optical cavity.

Control of quantum emitters is needed in order to enable many applications. Here, the authors demonstrate enhancement and dynamical control of the Purcell emission from erbium ions doped in a nanoparticle within a fiber-based microcavity.

Isolating and enhancing single-photon emitters for 1550 nm quantum light sources using double nanohole optical tweezers

Single-photon sources are required for quantum technologies and can be created from individual atoms and atom-like defects. Erbium ions produce single photons at low-loss fiber optic wavelengths, but they have low emission rates, making them challenging to isolate reliably. Here, we tune the size of gold double nanoholes (DNHs) to enhance the emission of single erbium emitters, achieving 50× enhancement over rectangular apertures previously demonstrated. This produces enough enhancement to show emission from single nanocrystals at wavelengths not seen in our previous work, i.e., 400 and 1550 nm. We observe discrete levels of emission for nanocrystals with low numbers of emitters and demonstrate isolating single emitters. We describe how the trapping time is proportional to the enhancement factor for a given DNH structure, giving us an independent way to measure the enhancement. This shows a promising path to achieving single emitter sources at 1550 nm.

Photonic integration of Er3+:Y2SiO5 with thin-film lithium niobate by flip chip bonding

Rare earth ions are known as promising candidates for building quantum light-matter interface. However, tunable photonic cavity access to rare earth ions in their desired host crystal remains challenging. Here, we demonstrate the integration of erbium doped yttrium orthosilicate (Er³⁺:Y₂SiO₅) with thin-film lithium niobate photonic circuit by plasma-activated direct flip chip bonding. Resonant coupling to erbium ions is realized by on-chip electro-optically tuned high Q lithium niobate micro-ring resonators. Fluorescence and absorption of erbium ions at 1536.48 nm are measured in the waveguides, while the collective ion-cavity cooperativity with micro-ring resonators is assessed to be 0.36. This work presents a versatile scheme for future rare earth ion integrated quantum devices.

Materials challenges and opportunities for quantum computing hardware

Quantum computing hardware technologies have advanced during the past two decades, with the goal of building systems that can solve problems that are intractable on classical computers. The ability to realize large-scale systems depends on major advances in materials science, materials engineering, and new fabrication techniques. We identify key materials challenges that currently limit progress in five quantum computing hardware platforms, propose how to tackle these problems, and discuss some new areas for exploration. Addressing these materials challenges will require scientists and engineers to work together to create new, interdisciplinary approaches beyond the current boundaries of the quantum computing field.

Hybrid III-V diamond photonic platform for quantum nodes based on neutral silicon vacancy centers in diamond

Integrating atomic quantum memories based on color centers in diamond with on-chip photonic devices would enable entanglement distribution over long distances. However, efforts towards integration have been challenging because color centers can be highly sensitive to their environment, and their properties degrade in nanofabricated structures. Here, we describe a heterogeneously integrated, on-chip, III-V diamond platform designed for neutral silicon vacancy (SiV⁰) centers in diamond that circumvents the need for etching the diamond substrate. Through evanescent coupling to SiV⁰ centers near the surface of diamond, the platform will enable Purcell enhancement of SiV⁰ emission and efficient frequency conversion to the telecommunication C-band. The proposed structures can be realized with readily available fabrication techniques.

Hybrid microwave-optical scanning probe for addressing solid-state spins in nanophotonic cavities

Spin-photon interfaces based on solid-state atomic defects have enabled a variety of key applications in quantum information processing. To maximize the light-matter coupling strength, defects are often placed inside nanoscale devices. Efficiently coupling light and microwave radiation into these structures is an experimental challenge, especially in cryogenic or high vacuum environments with limited sample access. In this work, we demonstrate a fiber-based scanning probe that simultaneously couples light into a planar photonic circuit and delivers high power microwaves for driving electron spin transitions. The optical portion achieves 46% one-way coupling efficiency, while the microwave portion supplies an AC magnetic field with strength up to 9 Gauss at 10 Watts of input microwave power. The entire probe can be scanned across a large number of devices inside a ³He cryostat without free-space optical access. We demonstrate this technique with silicon nanophotonic circuits coupled to single Er³⁺ ions.

Hybrid Integration of Silicon Photonic Devices on Lithium Niobate for Optomechanical Wavelength Conversion

The rapid development of quantum information processors has accelerated the demand for technologies that enable quantum networking. One promising approach uses mechanical resonators as an intermediary between microwave and optical fields. Signals from a superconducting, topological, or spin qubit processor can then be converted coherently to optical states at telecom wavelengths. However, current devices built from homogeneous structures suffer from added noise and a small conversion efficiency. Combining advantageous properties of different materials into a heterogeneous design should allow for superior quantum transduction devices-so far these hybrid approaches have however been hampered by complex fabrication procedures. Here we present a novel integration method, based on previous pick-and-place ideas, that can combine independently fabricated device components of different materials into a single device. The method allows for a precision alignment by continuous optical monitoring during the process. Using our method, we assemble a hybrid silicon-lithium niobate device with state-of-the-art wavelength conversion characteristics.

Optically addressable molecular spins for quantum information processing

Spin-bearing molecules are promising building blocks for quantum technologies as they can be chemically tuned, assembled into scalable arrays, and readily incorporated into diverse device architectures. In molecular systems, optically addressing ground-state spins would enable a wide range of applications in quantum information science, as has been demonstrated for solid-state defects. However, this important functionality has remained elusive for molecules. Here, we demonstrate such optical addressability in a series of synthesized organometallic, chromium(IV) molecules. These compounds display a ground-state spin that can be initialized and read out using light and coherently manipulated with microwaves. In addition, through atomistic modification of the molecular structure, we vary the spin and optical properties of these compounds, indicating promise for designer quantum systems synthesized from the bottom-up.

Investigation of the Electronic Structure and Optical, EPR, and ODMR Spectroscopic Properties for 171Yb3+-Doped Y2SiO5 Crystal: A Combined Theoretical Approach

Various spectroscopic properties of Yb³⁺-doped Y₂SiO₅ crystal have been extensively investigated due to its promising application in quantum information processing. However, the local structure, electronic structure of Yb³⁺:Y₂SiO₅ crystal, and its optical and magnetic properties have not been comprehensively studied from a theoretical viewpoint. In this work, the geometric and electronic structures of Yb³⁺ that replaces two crystallographic Y³⁺ sites in the Y₂SiO₅ crystal are first obtained by the method of density functional theory (DFT). Then, the optical, electron paramagnetic resonance (EPR), and optically detected magnetic resonance (ODMR) spectra for ¹⁷¹Yb³⁺ (nuclear spin I = 1/2) at such two sites are simultaneously calculated in the framework of the complete diagonalization (of energy) matrix (CDM) based on the optimized local structure around ¹⁷¹Yb³⁺ ion by DFT. The various calculated spectroscopic properties by such combined theoretical approach are consistent with the experimental ones, which demonstrates that CDM is effective and particularly suitable for calculating hyperfine A-tensors under zero, low, and intermediate magnetic field. More importantly, based on the obtained accurate hyperfine structure of ¹⁷¹Yb³⁺ in Y₂SiO₅ crystal, the possible "clock transitions", which can enhance the optical coherence time, can be assigned or predicted by the present approach. This study successfully explains the spectroscopic properties of ¹⁷¹Yb³⁺-doped Y₂SiO₅ and provides a feasible method to design and search for practical rare-earth-doped quantum information materials for the community.

Defect Engineering for Quantum Grade Rare-Earth Nanocrystals

Nanostructured systems that combine optical and spin transitions offer new functionalities for quantum technologies by providing efficient quantum light-matter interfaces. Rare-earth (RE) ion-doped nanoparticles are promising in this field as they show long-lived optical and spin quantum states. However, further development of their use in highly demanding applications, such as scalable single-ion-based quantum processors, requires controlling defects that currently limit coherence lifetimes. In this work, we show that a post-treatment process that includes multistep high-temperature annealing followed by high-power microwave oxygen plasma processing advantageously improves key properties for quantum technologies. We obtain single crystalline Eu³⁺:Y₂O₃ nanoparticles (NPs) of 100 nm diameter, presenting bulk-like inhomogeneous line widths (Γ_inh) and population lifetimes (T₁). Furthermore, a significant coherence lifetime (T₂) extension, up to a factor of 5, is successfully achieved by modifying the oxygen-related point defects in the NPs by the oxygen plasma treatment. These promising results confirm the potential of engineered RE NPs to integrate devices such as cavity-based single-photon sources, quantum memories, and processors. In addition, our strategy could be applied to a large variety of oxides to obtain outstanding crystalline quality NPs for a broad range of applications.

On-chip coherent microwave-to-optical transduction mediated by ytterbium in YVO4

Optical networks that distribute entanglement among various quantum systems will form a powerful framework for quantum science but are yet to interface with leading quantum hardware such as superconducting qubits. Consequently, these systems remain isolated because microwave links at room temperature are noisy and lossy. Building long distance connectivity requires interfaces that map quantum information between microwave and optical fields. While preliminary microwave-to-optical transducers have been realized, developing efficient, low-noise devices that match superconducting qubit frequencies (gigahertz) and bandwidths (10 kilohertz – 1 megahertz) remains a challenge. Here we demonstrate a proof-of-concept on-chip transducer using trivalent ytterbium-171 ions in yttrium orthovanadate coupled to a nanophotonic waveguide and a microwave transmission line. The device′s miniaturization, material, and zero-magnetic-field operation are important advances for rare-earth ion magneto-optical devices. Further integration with high quality factor microwave and optical resonators will enable efficient transduction and create opportunities toward multi-platform quantum networks.

Long distance interfaces between superconducting quantum information processing nodes would require coherent, efficient and low-noise microwave-to-optical conversion. Here, the authors use Yb ion ensembles in yttrium orthovanadate to demonstrate a transducer with the potential to fulfill these requirements.

Vanadium spin qubits as telecom quantum emitters in silicon carbide

Solid-state quantum emitters with spin registers are promising platforms for quantum communication, yet few emit in the narrow telecom band necessary for low-loss fiber networks. Here, we create and isolate near-surface single vanadium dopants in silicon carbide (SiC) with stable and narrow emission in the O band, with brightness allowing cavity-free detection in a wafer-scale material. In vanadium ensembles, we characterize the complex d ¹ orbital physics in all five available sites in 4H-SiC and 6H-SiC. The optical transitions are sensitive to mass shifts from local silicon and carbon isotopes, enabling optically resolved nuclear spin registers. Optically detected magnetic resonance in the ground and excited orbital states reveals a variety of hyperfine interactions with the vanadium nuclear spin and clock transitions for quantum memories. Last, we demonstrate coherent quantum control of the spin state. These results provide a path for telecom emitters in the solid state for quantum applications.

Sensing Individual Nuclear Spins with a Single Rare-Earth Electron Spin

Rare-earth related electron spins in crystalline hosts are unique material systems, as they can potentially provide a direct interface between telecom band photons and long-lived spin quantum bits. Specifically, their optically accessible electron spins in solids interacting with nuclear spins in their environment are valuable quantum memory resources. Detection of nearby individual nuclear spins, so far exclusively shown for few dilute nuclear spin bath host systems such as the nitrogen-vacancy center in diamond or the silicon vacancy in silicon carbide, remained an open challenge for rare earths in their host materials, which typically exhibit dense nuclear spin baths. Here, we present the electron spin spectroscopy of single Ce^{3+} ions in a yttrium orthosilicate host, featuring a coherence time of T_{2}=124  μs. This coherent interaction time is sufficiently long to isolate proximal ^{89}Y nuclear spins from the nuclear spin bath of ^{89}Y. Furthermore, it allows for the detection of a single nearby ^{29}Si nuclear spin, native to the host material with ∼5% abundance. This study opens the door to quantum memory applications in rare-earth ion related systems based on coupled environmental nuclear spins, potentially useful for quantum error correction schemes.

Controlling light emission by engineering atomic geometries in silicon photonics

By engineering atomic geometries composed of nearly 1000 atomic segments embedded in micro-resonators, we observe Bragg resonances induced by the atomic lattice at the telecommunication wavelength. The geometrical arrangement of erbium atoms into a lattice inside a silicon nitride (SiN) microring resonator reduces the scattering loss at a wavelength commensurate with the lattice. We confirm dependency of light emission to the atomic positions and lattice spacing and also observe Fano interference between resonant modes in the system.

Control and single-shot readout of an ion embedded in a nanophotonic cavity

Distributing entanglement over long distances using optical networks is an intriguing macroscopic quantum phenomenon with applications in quantum systems for advanced computing and secure communication^1,2. Building quantum networks requires scalable quantum light-matter interfaces¹ based on atoms³, ions⁴ or other optically addressable qubits. Solid-state emitters⁵, such as quantum dots and defects in diamond or silicon carbide^6-10, have emerged as promising candidates for such interfaces. So far, it has not been possible to scale up these systems, motivating the development of alternative platforms. A central challenge is identifying emitters that exhibit coherent optical and spin transitions while coupled to photonic cavities that enhance the light-matter interaction and channel emission into optical fibres. Rare-earth ions in crystals are known to have highly coherent 4f-4f optical and spin transitions suited to quantum storage and transduction^11-15, but only recently have single rare-earth ions been isolated^16,17 and coupled to nanocavities^18,19. The crucial next steps towards using single rare-earth ions for quantum networks are realizing long spin coherence and single-shot readout in photonic resonators. Here we demonstrate spin initialization, coherent optical and spin manipulation, and high-fidelity single-shot optical readout of the hyperfine spin state of single ¹⁷¹Yb³⁺ ions coupled to a nanophotonic cavity fabricated in an yttrium orthovanadate host crystal. These ions have optical and spin transitions that are first-order insensitive to magnetic field fluctuations, enabling optical linewidths of less than one megahertz and spin coherence times exceeding thirty milliseconds for cavity-coupled ions, even at temperatures greater than one kelvin. The cavity-enhanced optical emission rate facilitates efficient spin initialization and single-shot readout with conditional fidelity greater than 95 per cent. These results showcase a solid-state platform based on single coherent rare-earth ions for the future quantum internet.