Transition from Mott insulator to superconductor in GaNb4Se8 and GaTa4Se8 under high pressure

Pressure-Induced Changes in the Crystal Structure and Electrical Conductivity of GeV4S8

Lacunar spinels, represented by AM4X8 compounds (A = Ga or Ge; M = V, Mo, Nb, or Ta; X = S or Se), form a unique group of ternary chalcogenide compounds. Among them, GeV4S8 has garnered significant attention due to its distinctive electrical and magnetic properties. While previous research efforts have primarily focused on studying how this material behaves under cooling conditions, pressure is another factor that determines the state and characteristics of solid matter. In this study, we employed a diamond anvil cell in conjunction with high-energy synchrotron X-ray diffraction, Raman spectroscopy, four-point probes, and theoretical computation to thoroughly investigate this material. We found that the structural transformation from cubic to orthorhombic was initiated at 34 GPa and completed at 54 GPa. Through data fitting of volume vs pressure, we determined the bulk moduli to be 105 ± 4 GPa for the cubic phase and 111 ± 12 GPa for the orthorhombic phase. Concurrently, electrical resistance measurements indicated a semiconductor-to-nonmetallic conductor transition at ∼15 GPa. Moreover, we experimentally assessed the band gaps at different pressures to validate the occurrence of the electrical phase transition. We infer that the electrical phase transition correlates with the valence electrons in the V4 cluster rather than the crystal structure transformation. Furthermore, the computational results, electronic density of states, and band structure verified the experimental observation and facilitated the understanding of the mechanism governing the electrical phase transition in GeV4S8.

Resonating holes vs molecular spin-orbit coupled states in group-5 lacunar spinels

The valence electronic structure of magnetic centers is one of the factors that determines the characteristics of a magnet. This may refer to orbital degeneracy, as for jeff = 1/2 Kitaev magnets, or near-degeneracy, e.g., involving the third and fourth shells in cuprate superconductors. Here we explore the inner structure of magnetic moments in group-5 lacunar spinels, fascinating materials featuring multisite magnetic units in the form of tetrahedral tetramers. Our quantum chemical analysis reveals a very colorful landscape, much richer than the single-electron, single-configuration description applied so far to all group-5 GaM4X8 chalcogenides, and clarifies the basic multiorbital correlations on M4 tetrahedral clusters: while for V strong correlations yield a wave-function that can be well described in terms of four V4+V3+V3+V3+ resonant valence structures, for Nb and Ta a picture of dressed molecular-orbital jeff = 3/2 entities is more appropriate. These internal degrees of freedom likely shape vibronic couplings, phase transitions, and the magneto-electric properties in each of these systems.

Pressure-induced transition from a Mott insulator to a ferromagnetic Weyl metal in La2O3Fe2Se2

The insulator-metal transition in Mott insulators, known as the Mott transition, is usually accompanied with various novel quantum phenomena, such as unconventional superconductivity, non-Fermi liquid behavior and colossal magnetoresistance. Here, based on high-pressure electrical transport and XRD measurements, and first-principles calculations, we find that a unique pressure-induced Mott transition from an antiferromagnetic Mott insulator to a ferromagnetic Weyl metal in the iron oxychalcogenide La₂O₃Fe₂Se₂ occurs around 37 GPa without structural phase transition. Our theoretical calculations reveal that such an insulator-metal transition is mainly due to the enlarged bandwidth and diminishing of electron correlation at high pressure, fitting well with the experimental data. Moreover, the high-pressure ferromagnetic Weyl metallic phase possesses attractive electronic band structures with six pairs of Weyl points close to the Fermi level, and its topological property can be easily manipulated by the magnetic field. The emergence of Weyl fermions in La₂O₃Fe₂Se₂ at high pressure may bridge the gap between nontrivial band topology and Mott insulating states. Our findings not only realize ferromagnetic Weyl fermions associated with the Mott transition, but also suggest pressure as an effective controlling parameter to tune the emergent phenomena in correlated electron systems.

How Correlations and Spin-Orbit Coupling Work within Extended Orbitals of Transition-Metal Tetrahedra of 4d/5d Lacunar Spinels

Spin-orbit quartet ground states are associated with rich phenomenology, ranging from multipolar phases in f¹ rare-earth borides to magnetism emerging through covalency and vibronic couplings in d¹ transition-metal compounds. The latter effect has been studied since the 1960s on t_2g¹ octahedral ML₆ units in both molecular complexes and extended solid-state lattices. Here we analyze the J_eff = 3/2 quartet ground state of larger cubane-like M₄L₄ entities in lacunar spinels, composed of transition-metal (M) tetrahedra caged by chalcogenide ligands (L). These represent a unique platform where spin-orbit coupling acts on molecular-like, delocalized t₂ orbitals. Using quantum chemical methods, we pin down the interplay of spin-orbit couplings in such a setting and many-body physics related to other molecular-like single-electron levels, both below and above the reference t₂¹. We provide a different interpretation of resonant inelastic X-ray scattering data on GaTa₄Se₈ and, by comparing magnetic susceptibility data with calculated g factors, valuable insights into the important role of vibronic couplings.

Emerging Artificial Neuron Devices for Probabilistic Computing

In recent decades, artificial intelligence has been successively employed in the fields of finance, commerce, and other industries. However, imitating high-level brain functions, such as imagination and inference, pose several challenges as they are relevant to a particular type of noise in a biological neuron network. Probabilistic computing algorithms based on restricted Boltzmann machine and Bayesian inference that use silicon electronics have progressed significantly in terms of mimicking probabilistic inference. However, the quasi-random noise generated from additional circuits or algorithms presents a major challenge for silicon electronics to realize the true stochasticity of biological neuron systems. Artificial neurons based on emerging devices, such as memristors and ferroelectric field-effect transistors with inherent stochasticity can produce uncertain non-linear output spikes, which may be the key to make machine learning closer to the human brain. In this article, we present a comprehensive review of the recent advances in the emerging stochastic artificial neurons (SANs) in terms of probabilistic computing. We briefly introduce the biological neurons, neuron models, and silicon neurons before presenting the detailed working mechanisms of various SANs. Finally, the merits and demerits of silicon-based and emerging neurons are discussed, and the outlook for SANs is presented.

Metal chalcogenides for neuromorphic computing: emerging materials and mechanisms

The approaching end of Moore's law scaling has significantly accelerated multiple fields of research including neuromorphic-, quantum-, and photonic computing, each of which possesses unique benefits unobtained through conventional binary computers. One of the most compelling arguments for neuromorphic computing systems is power consumption, noting that computations made in the human brain are approximately 10⁶times more efficient than conventional CMOS logic. This review article focuses on the materials science and physical mechanisms found in metal chalcogenides that are currently being explored for use in neuromorphic applications. We begin by reviewing the key biological signal generation and transduction mechanisms within neuronal components of mammalian brains and subsequently compare with observed experimental measurements in chalcogenides. With robustness and energy efficiency in mind, we will focus on short-range mechanisms such as structural phase changes and correlated electron systems that can be driven by low-energy stimuli, such as temperature or electric field. We aim to highlight fundamental materials research and existing gaps that need to be overcome to enable further integration or advancement of metal chalcogenides for neuromorphic systems.

Metallization of Quantum Material GaTa4Se8 at High Pressure

Pressure is a unique thermodynamic variable to explore the phase competitions and novel phases inaccessible at ambient conditions. The resistive switching material GaTa₄Se₈ displays several quantum phases under pressure, such as a J_eff = 3/2 Mott insulator, a correlated quantum magnetic metal, and d-wave topological superconductivity, which has recently drawn considerable interest. Using high-pressure Raman spectroscopy, X-ray diffraction, extended X-ray absorption, transport measurements, and theoretical calculations, we reveal a complex phase diagram for GaTa₄Se₈ at pressures exceeding 50 GPa. In this previously unattained pressure regime, GaTa₄Se₈ ranges from a Mott insulator to a metallic phase and exhibits superconducting phases. In contrast to previous studies, we unveil a hidden correlation between the structural distortion and band gap prior to the insulator-to-metal transition, and the metallic phase shows superconductivity with structural and magnetic properties that are distinctive from the lower-pressure phase. These discoveries highlight that GaTa₄Se₈ is a unique material to probe novel quantum phases from a structural, metallicity, magnetism, and superconductivity perspective.

Emerging Memristive Artificial Synapses and Neurons for Energy-Efficient Neuromorphic Computing

Memristors have recently attracted significant interest due to their applicability as promising building blocks of neuromorphic computing and electronic systems. The dynamic reconfiguration of memristors, which is based on the history of applied electrical stimuli, can mimic both essential analog synaptic and neuronal functionalities. These can be utilized as the node and terminal devices in an artificial neural network. Consequently, the ability to understand, control, and utilize fundamental switching principles and various types of device architectures of the memristor is necessary for achieving memristor-based neuromorphic hardware systems. Herein, a wide range of memristors and memristive-related devices for artificial synapses and neurons is highlighted. The device structures, switching principles, and the applications of essential synaptic and neuronal functionalities are sequentially presented. Moreover, recent advances in memristive artificial neural networks and their hardware implementations are introduced along with an overview of the various learning algorithms. Finally, the main challenges of the memristive synapses and neurons toward high-performance and energy-efficient neuromorphic computing are briefly discussed. This progress report aims to be an insightful guide for the research on memristors and neuromorphic-based computing.

Probing insulators under pressure

Applying pressure on a material can reveal many physical properties and is a very efficient tool to understand its physics. Resistivity measurements have been the ideal probe to study metals under pressure. However, in the case of insulators, resistivity, or conductivity, it is often not the appropriate quantity characterizing the material. In this work, we present a newly developed in situ pressure tuning system that can be used over a wide temperature range (2 K-300 K) and allows changing the pressure at any temperature. We also present AC calorimetry and capacitance/loss measurements under pressure and demonstrate how this combination can be used to characterize a material that is too insulating for standard resistivity techniques.

Establishing magneto-structural relationships in the solid solutions of the skyrmion hosting family of materials: GaV4S8-ySey

The GaV4S8-ySey (y = 0 to 8) family of materials have been synthesized in both polycrystalline and single crystal form, and their structural and magnetic properties thoroughly investigated. Each of these materials crystallizes in the F[Formula: see text][Formula: see text]3m space group at ambient temperature. However, in contrast to the end members GaV4S8 and GaV4Se8, that undergo a structural transition to the R3m space group at 42 and 41 K respectively, the solid solutions (y = 1 to 7) retain cubic symmetry down to 1.5 K. In zero applied field the end members of the family order ferromagnetically at 13 K (GaV4S8) and 18 K (GaV4Se8), while the intermediate compounds exhibit a spin-glass-like ground state. We demonstrate that the magnetic structure of GaV4S8 shows localization of spins on the V cations, indicating that a charge ordering mechanism drives the structural phase transition. We conclude that the observation of both structural and ferromagnetic transitions in the end members of the series in zero field is a prerequisite for the stabilization of a skyrmion phase, and discuss how the absence of these transitions in the y = 1 to 7 materials can be explained by their structural properties.

Nonmagnetic Ground States and a Possible Quadrupolar Phase in 4d and 5d Lacunar Spinel Selenides GaM_{4}Se_{8} (M=Nb, Ta)

Structural and magnetic properties of cubic spinel selenides GaM_{4}Se_{8} (M=Nb, Ta), which are candidates for the molecular J_{eff}=3/2 Mott insulators, are investigated. The effective magnetic moments are reduced compared to the spin only value, indicating the presence of sizable spin-orbit coupling. GaNb_{4}Se_{8} and GaTa_{4}Se_{8} exhibit phase transitions into the nonmagnetic ground states with orthorhombic and tetragonal structures, respectively, which are robust against magnetic field up to at least 60 T. A cubic-cubic phase transition is observed in GaNb_{4}Se_{8} preceding the magnetic transition, suggesting the existence of a quadrupolar-ordered phase theoretically predicted in the J_{eff}=3/2 Mott insulator.

Architecture of nanoscale ferroelectric domains in GaMo4S8

Local-probe imaging of the ferroelectric domain structure and auxiliary bulk pyroelectric measurements were conducted at low temperatures with the aim to clarify the essential aspects of the orbitally driven phase transition in GaMo₄S₈, a lacunar spinel crystal that can be viewed as a spin-hole analogue of its GaV₄S₈ counterpart. We employed multiple scanning probe techniques combined with symmetry and mechanical compatibility analysis to uncover the hierarchical domain structures, developing on the 10-100 nm scale. The identified domain architecture involves a plethora of ferroelectric domain boundaries and junctions, including primary and secondary domain walls in both electrically neutral and charged configurations, and topological line defects transforming neutral secondary walls into two oppositely charged ones.

Direct experimental observation of the molecular J eff = 3/2 ground state in the lacunar spinel GaTa4Se8

Strong spin–orbit coupling lifts the degeneracy of t_2g orbitals in 5d transition-metal systems, leaving a Kramers doublet and quartet with effective angular momentum of J_eff = 1/2 and 3/2, respectively. These spin–orbit entangled states can host exotic quantum phases such as topological Mott state, unconventional superconductivity, and quantum spin liquid. The lacunar spinel GaTa₄Se₈ was theoretically predicted to form the molecular J_eff = 3/2 ground state. Experimental verification of its existence is an important first step to exploring the consequences of the J_eff = 3/2 state. Here, we report direct experimental evidence of the J_eff = 3/2 state in GaTa₄Se₈ by means of excitation spectra of resonant inelastic X-ray scattering at the Ta L₃ and L₂ edges. We find that the excitations involving the J_eff = 1/2 molecular orbital are absent only at the Ta L₂ edge, manifesting the realization of the molecular J_eff = 3/2 ground state in GaTa₄Se₈.

The strong interaction between electron spin and orbital degrees of freedom in 5d oxides can lead to exotic electronic ground states. Here the authors use resonant inelastic X-ray scattering to demonstrate that the theoretically proposed J_eff = 3/2 state is realised in GaTa₄Se₈.

Exchange anisotropy in the skyrmion host GaV4S8

Using ferromagnetic resonance spectroscopy at 34 GHz we explored the magnetic anisotropy of single-crystalline GaV₄S₈ in the field-polarized magnetic state. We describe the data in terms of an easy-axis type uniaxial anisotropy with an anisotropy constant [Formula: see text] erg cm^-3 at 2 K, corresponding to a relative exchange anisotropy [Formula: see text]%, and about [Formula: see text]erg cm^-3 near 11 K, i.e. at temperatures where the skyrmion-lattice phase was recently discovered. The relatively large value of K ₁ explains the confinement of the skyrmion tubes to the [Formula: see text] easy axes. A distinct set of resonances in the spectra is attributed to the co-existence of different rhombohedral domains. Complementary broadband spectroscopy demonstrates that non-collinear spin states may sensitively be detected by electron spin resonance techniques.

Multiferroicity and skyrmions carrying electric polarization in GaV4S8

Skyrmions are whirl-like topological spin objects with high potential for future magnetic data storage. A fundamental question that is relevant to both basic research and application is whether ferroelectric (FE) polarization can be associated with skyrmions' magnetic texture and whether these objects can be manipulated by electric fields. We study the interplay between magnetism and electric polarization in the lacunar spinel GaV4S8, which undergoes a structural transition associated with orbital ordering at 44 K and reveals a complex magnetic phase diagram below 13 K, including ferromagnetic, cycloidal, and Néel-type skyrmion lattice (SkL) phases. We found that the orbitally ordered phase of GaV4S8 is FE with a sizable polarization of ~1 μC/cm(2). Moreover, we observed spin-driven excess polarizations in all magnetic phases; hence, GaV4S8 hosts three different multiferroic phases with coexisting polar and magnetic order. These include the SkL phase, where we predict a strong spatial modulation of FE polarization close to the skyrmion cores. By taking into account the crystal symmetry and spin patterns of the magnetically ordered phases, we identify exchange striction as the main microscopic mechanism behind the spin-driven FE polarization in each multiferroic phase. Because GaV4S8 is unique among known SkL host materials owing to its polar crystal structure and the observed strong magnetoelectric effect, this study is an important step toward the nondissipative electric field control of skyrmions.

Néel-type skyrmion lattice with confined orientation in the polar magnetic semiconductor GaV4S8

Following the early prediction of the skyrmion lattice (SkL)--a periodic array of spin vortices--it has been observed recently in various magnetic crystals mostly with chiral structure. Although non-chiral but polar crystals with Cnv symmetry were identified as ideal SkL hosts in pioneering theoretical studies, this archetype of SkL has remained experimentally unexplored. Here, we report the discovery of a SkL in the polar magnetic semiconductor GaV4S8 with rhombohedral (C3v) symmetry and easy axis anisotropy. The SkL exists over an unusually broad temperature range compared with other bulk crystals and the orientation of the vortices is not controlled by the external magnetic field, but instead confined to the magnetic easy axis. Supporting theory attributes these unique features to a new Néel-type of SkL describable as a superposition of spin cycloids in contrast to the Bloch-type SkL in chiral magnets described in terms of spin helices.

Coulomb Liquid Phases of Bosonic Cluster Mott Insulators on a Pyrochlore Lattice

Employing large-scale quantum Monte Carlo simulations, we reveal the full phase diagram of the extended Hubbard model of hard-core bosons on the pyrochlore lattice with partial fillings. When the intersite repulsion is dominant, the system is in a cluster Mott insulator phase with an integer number of bosons localized inside the tetrahedral units of the pyrochlore lattice. We show that the full phase diagram contains three cluster Mott insulator phases with 1/4, 1/2, and 3/4 boson fillings, respectively. We further demonstrate that all three cluster Mott insulators are Coulomb liquid phases and its low-energy property is described by the emergent compact U(1) quantum electrodynamics. In addition to measuring the specific heat and entropy of the cluster Mott insulators, we investigate the correlation function of the emergent electric field and verify it is consistent with the compact U(1) quantum electrodynamics description. Our result sheds light on the magnetic properties of various pyrochlore systems, as well as the charge physics of the cluster magnets.

Fractionalized charge excitations in a spin liquid on partially filled pyrochlore lattices

We study the Mott transition from a metal to cluster Mott insulators in the 1/4- and 1/8-filled pyrochlore lattice systems [corrected]. It is shown that such Mott transitions can arise due to charge localization in clusters or in tetrahedron units, driven by the nearest-neighbor repulsive interaction. The resulting cluster Mott insulator is a quantum spin liquid with a spinon Fermi surface, but at the same time a novel fractionalized charge liquid with charge excitations carrying half the electron charge. There exist two emergent U(1) gauge fields or "photons" that mediate interactions between spinons and charge excitations, and between fractionalized charge excitations themselves, respectively. In particular, it is suggested that the emergent photons associated with the fractionalized charge excitations can be measured in x-ray scattering experiments. Various other experimental signatures of the exotic cluster Mott insulator are discussed in light of candidate materials with partially filled bands on the pyrochlore lattice.

Orbital-ordering-driven multiferroicity and magnetoelectric coupling in GeV₄S₈

We report here the discovery of multiferroicity and large magnetoelectric coupling in the type I orbital order system GeV₄S₈. Our study demonstrates that this clustered compound displays a para-ferroelectric transition at 32 K. This transition originates from an orbital ordering which reorganizes the charge within the transition metal clusters. Below the antiferromagnetic transition at 17 K, the application of a magnetic field significantly affects the ferroelectric polarization, revealing thus a large magnetoelectric coupling. Our study suggests that the application of a magnetic field induces a metamagnetic transition which significantly affects the ferroelectric polarization thanks to an exchange striction phenomenon.

First-order insulator-to-metal Mott transition in the paramagnetic 3D system GaTa4Se8

The nature of the Mott transition in the absence of any symmetry breaking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa(4)Se(8), as a function of temperature and applied pressure. We report novel experiments on single crystals, which demonstrate that the transition is of first order and follows from the coexistence of two states, one insulating and one metallic, that we toggle with a small bias current. We provide support for our findings by contrasting the experimental data with calculations that combine local density approximation with dynamical mean-field theory, which are in very good agreement.

Spin-orbital entangled molecular jeff states in lacunar spinel compounds

The entanglement of the spin and orbital degrees of freedom through the spin-orbit coupling has been actively studied in condensed matter physics. In several iridium oxide systems, the spin-orbital entangled state, identified by the effective angular momentum jeff, can host novel quantum phases. Here we show that a series of lacunar spinel compounds, GaM4X8 (M=Nb, Mo, Ta and W and X=S, Se and Te), gives rise to a molecular jeff state as a new spin-orbital composite on which the low-energy effective Hamiltonian is based. A wide range of electron correlations is accessible by tuning the bandwidth under external and/or chemical pressure, enabling us to investigate the cooperation between spin-orbit coupling and electron correlations. As illustrative examples, a two-dimensional topological insulating phase and an anisotropic spin Hamiltonian are investigated in the weak and strong coupling regimes, respectively. Our finding can provide an ideal platform for exploring jeff physics and the resulting emergent phenomena.

Resistive switching at the nanoscale in the Mott insulator compound GaTa4Se8

We study the Mott insulator compound GaTa4Se8 in which we previously discovered an electric-field-induced resistive transition. We show that the resistive switching is associated to the appearance of metallic and super-insulating nanodomains by means of scanning tunneling microscopy/spectroscopy (STM/STS). Moreover, we show that local electronic transitions can be controlled at the nanoscale at room temperature using the electric field of the STM tip. This opens the way for possible applications in resistive random access memories (RRAM) devices.

Optical conductivity measurements of GaTa4Se8 under high pressure: evidence of a bandwidth-controlled insulator-to-metal Mott transition

The optical properties of a GaTa(4)Se(8) single crystal are investigated under high pressure. At ambient pressure, the optical conductivity exhibits a charge gap of ≈0.12 eV and a broad midinfrared band at ≈0.55 eV. As pressure is increased, the low energy spectral weight is strongly enhanced and the optical gap is rapidly filled, pointing to an insulator to metal transition around 6 GPa. The overall evolution of the optical conductivity demonstrates that GaTa(4)Se(8) is a Mott insulator which undergoes a bandwidth-controlled Mott metal-insulator transition under pressure, in remarkably good agreement with theory. With the use of our optical data and ab initio band structure calculations, our results were successfully compared to the (U/D, T/D) phase diagram predicted by dynamical mean field theory for strongly correlated systems.

Half-metallic ferromagnetism and large negative magnetoresistance in the new lacunar spinel GaTi3VS8

The lacunar spinel compounds GaTi(4-x)V(x)S(8) (0 < x < 4), consisting of Ti(4-x)V(x) tetrahedral clusters, were prepared and their structures were determined by powder X-ray diffraction. The electronic structures of GaTi(4-x)V(x)S(8) (x = 0, 1, 2, 3) were examined by density functional calculations, and the electrical resistivity and magnetic susceptibility of these compounds were measured. Our calculations predict that GaTi(3)VS(8) is a ferromagnetic half-metal, and this prediction was confirmed by magnetotransport experiments performed on polycrystalline samples of GaTi(3)VS(8). The latter reveal a large negative magnetoresistance (up to 22% at 2 K), which is consistent with the intergrain tunnelling magnetoresistance expected for powder samples of a ferromagnetic half-metal and indicates the presence of high spin polarization greater than 53% in GaTi(3)VS(8).

Impurity band Mott insulators: a new route to high Tc superconductivity

Last century witnessed the birth of semiconductor electronics and nanotechnology. The physics behind these revolutionary developments is certain quantum mechanical behaviour of 'impurity state electrons' in crystalline 'band insulators', such as Si, Ge, GaAs and GaN, arising from intentionally added (doped) impurities. The present article proposes that certain collective quantum behaviour of these impurity state electrons, arising from Coulomb repulsions, could lead to superconductivity in a parent band insulator, in a way not suspected before. Impurity band resonating valence bond theory of superconductivity in boron doped diamond, recently proposed by us, suggests possibility of superconductivity emerging from impurity band Mott insulators. We use certain key ideas and insights from the field of high-temperature superconductivity in cuprates and organics. Our suggestion also offers new possibilities in the field of semiconductor electronics and nanotechnology. The current level of sophistication in solid state technology and combinatorial materials science is very well capable of realizing our proposal and discover new superconductors.

Electric-Pulse-driven Electronic Phase Separation, Insulator-Metal Transition, and Possible Superconductivity in a Mott Insulator

Experimental evidence of a nonvolatile electric-pulse-induced insulator-to-metal transition and possible superconductivity in the Mott insulator GaTa4 Se8 is reported. Scanning tunneling microscopy experiments show that this unconventional response of the system to short electric pulses arises from a nanometer-scale electronic phase separation generated in the bulk material.