Coexistence of two different Peierls distortions within an atomic scale wire: Si(553)-Au

Implementation of the Su-Schrieffer-Heeger Model in the Self-Assembly Si-In Atomic Chains on the Si(553)-Au Surface

Indium-decorated Si atomic chains on a stepped Si(553)-Au substrate are proposed as an extended Su-Schrieffer-Heeger (SSH) model, revealing topological end states. An appropriate amount of In atoms on the Si(553)-Au surface induce the self-assembly formation of trimer SSH chains, where the chain unit cell comprises one In atom and two Si atoms, confirmed by scanning tunneling microscopy images and density functional calculations. The electronic structure of the system, examined through scanning tunneling spectroscopy, manifests three electron bands within the Si-In chain, accompanied by additional midgap topological states exclusively appearing at the chain's end atoms. To elucidate the emergence of these topological states, a tight-binding model for a finite-length-extended SSH chain is proposed. Analysis of the energy spectra, density of states functions, and eigenfunctions demonstrates the topological nature of these self-assembled atomic chains.

Distribution of Electron Density in Self-Assembled One-Dimensional Chains of Si Atoms

Scanning tunneling microscopy measurements of height profiles, along the chains of Si atoms on the terrace edges of a perfectly ordered Si(553)-Au surface, reveal an STM bias-dependent mixed periodicity with periods of one, two and one and a half lattice constants. The simple linear chain model usually observed with STM cannot explain the unexpected fractional periodicity in the height profile. It was found that the edge Si chain stands for, in fact, a zigzag structure, which is composed of two neighboring rows of Si atoms and was detected in the STM experiments. Tight-binding calculations of the local density of states and charge occupancy along the chain explain the voltage-dependent modulations of the STM profiles and show that oscillation periods are determined mainly by the surface and STM tip Fermi energies.

Z3 Charge Density Wave of Silicon Atomic Chains on a Vicinal Silicon Surface

An ideal one-dimensional electronic system is formed along atomic chains on Au-decorated vicinal silicon surfaces, but the nature of its low-temperature phases has been puzzling for last two decades. Here, we unambiguously identify the low-temperature structural distortion of this surface using high-resolution atomic force microscopy and scanning tunneling microscopy. The most important structural ingredient of this surface, the step-edge Si chains, are found to be strongly buckled, every third atom down, forming trimer unit cells. This observation is consistent with the recent model of rehybridized dangling bonds and rules out the antiferromagnetic spin ordering proposed earlier. The spectroscopy and electronic structure calculation indicate a charge density wave insulator with a Z₃ topology, making it possible to exploit topological phases and excitations. The tunneling current was found to substantially lower the energy barrier between three degenerate CDW states, which induces a dynamically fluctuating CDW at very low temperature.

Creation and annihilation of mobile fractional solitons in atomic chains

Localized modes in one-dimensional (1D) topological systems, such as Majonara modes in topological superconductors, are promising candidates for robust information processing. While theory predicts mobile integer and fractional topological solitons in 1D topological insulators, experiments so far have unveiled immobile, integer solitons only. Here we observe fractionalized phase defects moving along trimer silicon atomic chains formed along step edges of a vicinal silicon surface. By means of tunnelling microscopy, we identify local defects with phase shifts of 2π/3 and 4π/3 with their electronic states within the band gap and with their motions activated above 100 K. Theoretical calculations reveal the topological soliton origin of the phase defects with fractional charges of ±2e/3 and ±4e/3. Additionally, we create and annihilate individual solitons at desired locations by current pulses from the probe tip. Mobile and manipulable topological solitons may serve as robust, topologically protected information carriers in future information technology.

Plasmon localization by adatoms in gold atomic wires on Si(775)

Self-organized gold chains on vicinal Si(111) surfaces represent prototype examples of quasi-one-dimensional objects that are stabilized by hybridization with Si surface states. Their plasmons contain important information about the unoccupied bandstructure close to the Fermi level. Using Si(775)-Au as an example, we report here the modifications of the plasmon dispersion by the simple atomic adatom species H and O. Using a combination of low energy electron diffraction and high-resolution electron energy loss spectroscopy, we study the interconnection between plasmonic excitation and the corresponding local surface structure. Both adsorbates do not destroy metallicity, but, similar to Si(553)-Au, atomic hydrogen enhances dimerization of the Au chains, which at small concentrations counteracts the disorder introduced by random adsorption. This effect, most likely caused by electron donation of H to the surface states, is missing in case of adsorbed oxygen, so that only the effect of disorder is observed. For both adsorbates increasing disorder as a function of adsorbate concentration finally results in plasmon localization and opening of a band gap.

Vibration-Driven Self-Doping of Dangling-Bond Wires on Si(553)-Au Surfaces

Density-functional theory is used to explore the Si(553)-Au surface dynamics. Our study (i) reveals a complex two-stage order-disorder phase transition where with rising temperature first the ×3 order along the Si step edges and, subsequently, the ×2 order of the Au chains is lost, (ii) identifies the transient modification of the electron chemical potential during soft Au chain vibrations as instrumental for disorder at the step edge, and (iii) shows that the transition leads to a self-doping of the Si dangling-bond wire at the step edge. The calculations are corroborated by Raman measurements of surface phonon modes and explain previous electron diffraction, scanning tunneling microscopy, and surface transport data.

Thermally Induced Crossover from 2D to 1D Behavior in an Array of Atomic Wires: Silicon Dangling-Bond Solitons in Si(553)-Au

The self-assembly of submonolayer amounts of Au on the densely stepped Si(553) surface creates an array of closely spaced "atomic wires" separated by 1.5 nm. At low temperature, charge transfer between the terraces and the row of silicon dangling bonds at the step edges leads to a charge-ordered state within the row of dangling bonds with ×3 periodicity. Interactions between the dangling bonds lead to their ordering into a fully two-dimensional (2D) array with centered registry between adjacent steps. We show that as the temperature is raised, soliton defects are created within each step edge. The concentration of solitons rises with increasing temperature and eventually destroys the 2D order by decoupling the step edges, reducing the effective dimensionality of the system to 1D. This crossover from higher to lower dimensionality is unexpected and, indeed, opposite to the behavior in other systems.

Controlling the Local Electronic Properties of Si(553)-Au through Hydrogen Doping

We propose a quantitative and reversible method for tuning the charge localization of Au-stabilized stepped Si surfaces by site-specific hydrogenation. This is demonstrated for Si(553)-Au as a model system by combining density functional theory simulations and reflectance anisotropy spectroscopy experiments. We find that controlled H passivation is a two-step process: step-edge adsorption drives excess charge into the conducting metal chain "reservoir" and renders it insulating, while surplus H recovers metallic behavior. Our approach illustrates a route towards microscopic manipulation of the local surface charge distribution and establishes a reversible switch of site-specific chemical reactivity and magnetic properties on vicinal surfaces.

One-dimensional quantum matter: gold-induced nanowires on semiconductor surfaces

Interacting electrons confined to only one spatial dimension display a wide range of unusual many-body quantum phenomena, ranging from Peierls instabilities to the breakdown of the canonical Fermi liquid paradigm to even unusual spin phenomena. The underlying physics is not only of tremendous fundamental interest, but may also have bearing on device functionality in future micro- and nanoelectronics with lateral extensions reaching the atomic limit. Metallic adatoms deposited on semiconductor surfaces may form self-assembled atomic nanowires, thus representing highly interesting and well-controlled solid-state realizations of such 1D quantum systems. Here we review experimental and theoretical investigations on a few selected prototypical nanowire surface systems, specifically Ge(0 0 1)-Au and Si(hhk)-Au, and the search for 1D quantum states in them. We summarize the current state of research and identify open questions and issues.

Structural Distortions and Charge Density Waves in Iodine Chains Encapsulated inside Carbon Nanotubes

Atomic chains are perfect systems for getting fundamental insights into the electron dynamics and coupling between the electronic and ionic degrees of freedom in one-dimensional metals. Depending on the band filling, they can exhibit Peierls instabilities (or charge density waves), where equally spaced chain of atoms with partially filled band is inherently unstable, exhibiting spontaneous distortion of the lattice that further leads to metal-insulator transition in the system. Here, using high-resolution scanning transmission electron microscopy, we directly image the atomic structures of a chain of iodine atoms confined inside carbon nanotubes. In addition to long equidistant chains, the ones consisting of iodine dimers and trimers were also observed, as well as transitions between them. First-principles calculations reproduce the experimentally observed bond lengths and lattice constants, showing that the ionic movement is largely unconstrained in the longitudinal direction, while naturally confined by the nanotube in the lateral directions. Moreover, the trimerized chain bears the hallmarks of a charge density wave. The transition is driven by changes in the charge transfer between the chain and the nanotube and is enabled by the charge compensation and additional screening provided by the nanotube.

Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces

Existing examples of Peierls-type 1D systems on surfaces involve depositing metallic overlayers on semiconducting substrates, in particular, at step edges. Here we propose a new class of Peierls system on the (101[over ¯]0) surface of metal-anion wurtzite semiconductors. When the anions are bonded to hydrogen or lithium atoms, we obtain rows of threefold coordinated metal atoms that act as one-atom-wide metallic structures. First-principles calculations show that the surface is metallic, and below a certain critical temperature the surface will condense to a semiconducting state. The idea of surface scaffolding is introduced in which the rows are constrained to move along simple up-down and/or sideways displacements, mirroring the paradigm envisioned in Peierls's description. We predict that this type of insulating state should be visible in the partially hydrogenated (101[over ¯]0) surface of many wurtzite compounds.

Correlation between morphology, electron band structure, and resistivity of Pb atomic chains on the Si(5 5 3)-Au surface

Structural and electron transport properties of multiple Pb atomic chains fabricated on the Si(5 5 3)-Au surface are investigated using scanning tunneling spectroscopy, reflection high electron energy diffraction, angular resolved photoemission electron spectroscopy and in situ electrical resistance. The study shows that Pb atomic chains growth modulates the electron band structure of pristine Si(5 5 3)-Au surface and hence changes its sheet resistivity. Strong correlation between chains morphology, electron band structure and electron transport properties is found. To explain experimental findings a theoretical tight-binding model of multiple atomic chains interacting on effective substrate is proposed.

Spin Chains and Electron Transfer at Stepped Silicon Surfaces

High-index surfaces of silicon with adsorbed gold can reconstruct to form highly ordered linear step arrays. These steps take the form of a narrow strip of graphitic silicon. In some cases--specifically, for Si(553)-Au and Si(557)-Au--a large fraction of the silicon atoms at the exposed edge of this strip are known to be spin-polarized and charge-ordered along the edge. The periodicity of this charge ordering is always commensurate with the structural periodicity along the step edge and hence leads to highly ordered arrays of local magnetic moments that can be regarded as "spin chains." Here, we demonstrate theoretically as well as experimentally that the closely related Si(775)-Au surface has--despite its very similar overall structure--zero spin polarization at its step edge. Using a combination of density-functional theory and scanning tunneling microscopy, we propose an electron-counting model that accounts for these differences. The model also predicts that unintentional defects and intentional dopants can create local spin moments at Si(hhk)-Au step edges. We analyze in detail one of these predictions and verify it experimentally. This finding opens the door to using techniques of surface chemistry and atom manipulation to create and control silicon spin chains.

Realization of a Strained Atomic Wire Superlattice

A superlattice of strained Au-Si atomic wires is successfully fabricated on a Si surface. Au atoms are known to incorporate into the stepped Si(111) surface to form a Au-Si atomic wire array with both one-dimensional (1D) metallic and antiferromagnetic atomic chains. At a reduced density of Au, we find a regular array of Au-Si wires in alternation with pristine Si nanoterraces. Pristine Si nanoterraces impose a strain on the neighboring Au-Si wires, which modifies both the band structure of metallic chains and the magnetic property of spin chains. This is an ultimate 1D version of a strained-layer superlattice of semiconductors, defining a direction toward the fine engineering of self-assembled atomic-scale wires.

Direct momentum-resolved observation of one-dimensional confinement of externally doped electrons within a single subnanometer-scale wire

Cutting-edge research in the band engineering of nanowires at the ultimate fine scale is related to the minimum scale of nanowire-based devices. The fundamental issue at the subnanometer scale is whether angle-resolved photoemission spectroscopy (ARPES) can be used to directly measure the momentum-resolved electronic structure of a single wire because of the difficulty associated with assembling single wire into an ordered array for such measurements. Here, we demonstrated that the one-dimensional (1D) confinement of electrons, which are transferred from external dopants, within a single subnanometer-scale wire (subnanowire) could be directly measured using ARPES. Convincing evidence of 1D electron confinement was obtained using two different gold subnanowires with characteristic single metallic bands that were alternately and spontaneously ordered on a stepped silicon template, Si(553). Noble metal atoms were adsorbed at room temperature onto the gold subnanowires while the overall structure of the wires was maintained. Only one type of gold subnanowire could be controlled using external noble metal dopants without transforming the metallic band of the other type of gold subnanowires. This result was confirmed by scanning tunnelling microscopy experiments and first-principles calculations. The selective control clearly showed that externally doped electrons could be confined within a single gold subnanowire. This experimental evidence was used to further investigate the effects of the disorder induced by external dopants on a single subnanowire using ARPES.

Scattering of charge carriers by Cr impurities in magnetotransport on a Bi(1 1 1) ultra-thin film

In this investigation we tested the role of Cr impurities on the strongly spin-polarized surface states of ultra-thin epitaxially grown Bi(1 1 1) films by measuring surface magnetoconductance and the Hall effect in conjunction with low-energy electron diffraction at a low temperature (10 K). Compared with Fe and Co, investigated recently, Cr atoms turned out to have scattering cross-sections that are about a factor of three higher than the former atoms. Nevertheless, only a small electron donation (0.03 e/atom) was found for Cr. It also exhibits strong spin-orbit scattering, as judged from quantitative analysis of weak localization effects. As a result, all spin-dependent selection rules are gradually relaxed with increasing Cr concentration, so that the initially observed weak anti-localization shifts towards weak localization. The non-monotonic decrease of conductance as a function of Cr concentration, even at 10 K, indicates high diffusivity and activated adsorption into its final optimal adsorption site.

Modeling 1D structures on semiconductor surfaces: synergy of theory and experiment

Atomic scale nanowires attract enormous interest in a wide range of fields. On the one hand, due to their quasi-one-dimensional nature, they can act as an experimental testbed for exotic physics: Peierls instability, charge density waves, and Luttinger liquid behavior. On the other hand, due to their small size, they are of interest not only for future device applications in the micro-electronics industry, but also for applications regarding molecular electronics. This versatile nature makes them interesting systems to produce and study, but their size and growth conditions push both experimental production and theoretical modeling to their limits. In this review, modeling of atomic scale nanowires on semiconductor surfaces is discussed, focusing on the interplay between theory and experiment. The current state of modeling efforts on Pt- and Au-induced nanowires on Ge(001) is presented, indicating their similarities and differences. Recently discovered nanowire systems (Ir, Co, Sr) on the Ge(001) surface are also touched upon. The importance of scanning tunneling microscopy as a tool for direct comparison of theoretical and experimental data is shown, as is the power of density functional theory as an atomistic simulation approach. It becomes clear that complementary strengths of theoretical and experimental investigations are required for successful modeling of the atomistic nanowires, due to their complexity.

Electronic properties of a quantum wire interacting with a surface: the role of periodically placed impurities

The transmittance and density of states (DOS) of a quantum wire which is tunnel coupled to the underlying substrate are investigated theoretically using the retarded Green's function method. The wire is composed of periodically placed impurities with Coulomb interactions and is modeled by a tight-binding Hamiltonian within the mean-field approximation. For a given periodicity of impurities along the wire we observe energy gaps in the structure of DOS. These gaps disappear for a wire coupled with the substrate electrode with localized electrons which leads to a metal-insulator transition in the system. Our numerical studies reveal that the transmittance through the system strongly depends on whether or not the substrate electrons are localized.

Structural transition in atomic chains driven by transient doping

A reversible structural transition is observed on Si(553)-Au by scanning tunneling microscopy, triggered by electrons injected from the tip into the surface. The periodicity of atomic chains near the step edges changes from the 1×3 ground state to a 1×2 excited state with increasing tunneling current. The threshold current for this transition is reduced at lower temperatures. In conjunction with first-principles density-functional calculations it is shown that the 1×2 phase is created by temporary doping of the atom chains. Random telegraph fluctuations between two levels of the tunneling current provide direct access to the dynamics of the phase transition, revealing lifetimes in the millisecond range.

Evidence for long-range spin order instead of a Peierls transition in si(553)-Au chains

Stabilization of the Si(553) surface by Au adsorption results in two different atomically defined chain types, one of Au atoms and one of Si. At low temperature these chains develop two- and threefold periodicity, respectively, previously attributed to Peierls instabilities. Here we report evidence from scanning tunneling microscopy that rules out this interpretation. The ×3 superstructure of the Si chains vanishes for low tunneling bias, i.e., close the Fermi level. In addition, the Au chains remain metallic despite their period doubling. Both observations are inconsistent with a Peierls mechanism. On the contrary, our results are in excellent, detailed agreement with the Si(553)-Au ground state predicted by density-functional theory, where the ×2 periodicity of the Au chain is an inherent structural feature and every third Si atom is spin polarized.

Temperature dependence of the electronic structure of two-dimensional Na gas on the Si(111)-7 × 7 surface

The temperature dependence of the irreversible phase transition from a two-dimensional gas to an ordered zero-dimensional solid on the Si(111)-7 × 7 surface was studied using photoemission spectroscopy. With increasing Na coverage, the two-dimensional Na gas, which is a state of highly mobile Na atoms, undergoes a phase transition into ordered zero-dimensional magic nanoclusters at room temperature. The critical Na coverage of the phase transition was found to increase with reduced temperature. This was used to develop a gas-solid phase diagram of Na atoms on the Si(111)-7 × 7 surface as a function of Na coverage and sample temperature based on the electronic structure. The temperature dependence of the phase transition can be ascribed to the suppression of the thermal energy that is required to overcome the energetic barrier between the two-dimensional gas and the zero-dimensional solid at low temperature, where three different hopping mechanisms are related to the phase transition.

Au-induced quantum chains on Ge(001)-symmetries, long-range order and the conduction path

Atomic nanowires on the Au/Ge(001) surface are investigated for their structural and electronic properties using scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES). STM reveals two distinct symmetries: a c(8 × 2) describing the basic repeating distances, while the fine structure on top of the wires causes an additional superstructure of p(4 × 1). Both symmetries are long-range ordered as judged from low-energy electron diffraction. The Fermi surface is composed of almost perfectly straight sheets. Thus, the electronic states are one-dimensionally confined. Spatial dI/dV maps, where both topography and density of states (DOS) are probed simultaneously, reveal that the DOS at low energies, i.e. the conduction path, is oriented along the chain direction. This is fully consistent with the recently reported Tomonaga-Luttinger liquid phase of Au/Ge(001), with the density of states being suppressed by a power-law towards the Fermi energy.

Metallic rare-earth silicide nanowires on silicon surfaces

The formation, atomic structure, and electronic properties of self-assembled rare-earth silicide nanowires on silicon surfaces were studied by scanning tunneling microscopy and angle-resolved photoelectron spectroscopy. Metallic dysprosium and erbium silicide nanowires were observed on both the Si(001) and Si(557) surfaces. It was found that they consist of hexagonal rare-earth disilicides for both surface orientations. On Si(001), the nanowires are characterized by a one-dimensional band structure, while the electronic dispersion is two-dimensional for the nanowires formed on Si(557). This behavior is explained by the different orientations of the hexagonal c axis of the silicide leading to different conditions for the carrier confinement. By considering this carrier confinement it is demonstrated how the one-dimensional band structure of the nanowires on Si(001) can be derived from the two-dimensional one of the silicide monolayer on Si(111).

One-dimensional diffusion of Pb atoms on the Si(553)-Au surface

One-dimensional diffusion along long atomic chains of the Si(553)-Au surface is studied with scanning tunneling microscopy. Ab initio calculations reveal aligned preferential adsorption sites between Si step edge atomic chain and double Au atomic chain on each terrace. At 220 K the Pb atoms hop between shallow potential basins forming a potential groove and move parallel to the atomic chains. By combining the results of measurements with the model calculations of the Pb atoms static energy on the Si(553)-Au surface the attempt frequency ν₀ is determined.

Quasi-one-dimensional metals on semiconductor surfaces with defects

Several examples are known in which massive arrays of metal atomic chains are formed on semiconductor surfaces that show quasi-one-dimensional metallic electronic structures. In this review, Au chains on Si(557) and Si(553) surfaces, and In chains on Si(111) surfaces, are introduced and discussed with regard to the physical properties determined by experimental data from scanning tunneling microscopy (STM), angle-resolved photoemission spectroscopy (ARPES) and electrical conductivity measurements. They show quasi-one-dimensional Fermi surfaces and parabolic band dispersion along the chains. All of them are known from STM and ARPES to exhibit metal-insulator transitions by cooling and charge-density-wave formation due to Peierls instability of the metallic chains. The electrical conductivity, however, reveals the metal-insulator transition only on the less-defective surfaces (Si(553)-Au and Si(111)-In), but not on a more-defective surface (Si(557)-Au). The latter shows an insulating character over the whole temperature range. Compared with the electronic structure (Fermi surfaces and band dispersions), the transport property is more sensitive to the defects. With an increase in defect density, the conductivity only along the metal atomic chains was significantly reduced, showing that atomic-scale point defects decisively interrupt the electrical transport along the atomic chains and hide the intrinsic property of transport in quasi-one-dimensional systems.

Two-dimensional self-organization of an ordered Au silicide nanowire network on a Si(110)-16 x 2 surface

A well-ordered two-dimensional (2D) network consisting of two crossed Au silicide nanowire (NW) arrays is self-organized on a Si(110)-16 x 2 surface by the direct-current heating of approximately 1.5 monolayers of Au on the surface at 1100 K. Such a highly regular crossbar nanomesh exhibits both a perfect long-range spatial order and a high integration density over a mesoscopic area, and these two self-ordering crossed arrays of parallel-aligned NWs have distinctly different sizes and conductivities. NWs are fabricated with widths and pitches as small as approximately 2 and approximately 5 nm, respectively. The difference in the conductivities of two crossed-NW arrays opens up the possibility for their utilization in nanodevices of crossbar architecture. Scanning tunneling microscopy/spectroscopy studies show that the 2D self-organization of this perfect Au silicide nanomesh can be achieved through two different directional electromigrations of Au silicide NWs along different orientations of two nonorthogonal 16 x 2 domains, which are driven by the electrical field of direct-current heating. Prospects for this Au silicide nanomesh are also discussed.

Playing pinball with atoms

We demonstrate the feasibility of controlling an atomic scale mechanical device by an external electrical signal. On a germanium substrate, a switching motion of pairs of atoms is induced by electrons that are directly injected into the atoms with a scanning tunneling microscope tip. By precisely controlling the tip current and distance we make two atom pairs behave like the flippers of an atomic-sized pinball machine. This atomic scale mechanical device exhibits six different configurations.

Recent ARPES experiments on quasi-1D bulk materials and artificial structures

The spectroscopy of quasi-one-dimensional (1D) systems has been a subject of strong interest since the first experimental observations of unusual line shapes in the early 1990s. Angle-resolved photoemission (ARPES) measurements performed with increasing accuracy have greatly broadened our knowledge of the properties of bulk 1D materials and, more recently, of artificial 1D structures. They have yielded a direct view of 1D bands, of open Fermi surfaces, and of characteristic instabilities. They have also provided unique microscopic evidence for the non-conventional, non-Fermi-liquid, behavior predicted by theory, and for strong and singular interactions. Here we briefly review some of the remarkable experimental results obtained in the last decade.

New model system for a one-dimensional electron liquid: self-organized atomic gold chains on Ge(001)

Unique electronic properties of self-organized Au atom chains on Ge(001) in novel c(8 x 2) long-range order are revealed by scanning tunneling microscopy. Along the nanowires an exceptionally narrow conduction path exists which is virtually decoupled from the substrate. It is laterally confined to the ultimate limit of single atom dimension, and is strictly separated from its neighbors, as not previously reported. The resulting tunneling conductivity shows a dramatic inhomogeneity of 2 orders of magnitude. The atom chains thus represent an outstandingly close approach to a one-dimensional electron liquid.

One-dimensional 3d electronic bands of monatomic Cu chains

The electronic structure of an array of monatomic Cu chains grown on the Pt(997) surface has been examined by angle-resolved photoemission. The monatomic wires exhibit properties associated with 3d electron confinement in one dimension. Along the wire direction, the 3d bands states display a dispersive character, with periodicity in reciprocal space defined by the wire array geometry. These observations are compared and analyzed with ab initio calculations based on the full-potential linearized augmented plane-wave method.

Hopping domain wall induced by paired adatoms on an atomic wire: si(111)-(5 x 2)-Au

We observed an inhomogeneous fluctuation along one-dimensional atomic wires self-assembled on a Si(111) surface using scanning tunneling microscopy. The fluctuation exhibits dynamic behavior at room temperature and is observed only in a specific geometric condition; the spacing between two neighboring adatom defects is discommensurate with the wire lattice. Upon cooling, the dynamic fluctuation freezes to show the existence of an atomic-scale dislocation or domain wall induced by such "unfavorably" paired adatoms. The microscopic characteristics of the dynamic fluctuation are explained in terms of a hopping solitonic domain wall, and a local potential for this motion imposed by the adatoms is quantified.

Band-structure engineering of gold atomic wires on silicon by controlled doping

We report on the systematic tuning of the electronic band structure of atomic wires by controlling the density of impurity atoms. The atomic wires are self-assembled on Si(111) by substitutional gold adsorbates and extra silicon atoms are deposited as the impurity dopants. The one-dimensional electronic band of gold atomic wires, measured by angle-resolved photoemission, changes from a fully metallic to semiconducting one with its band gap increasing above 0.3 eV along with an energy shift as a linear function of the Si dopant density. The gap opening mechanism is suggested to be related to the ordering of the impurities.

Strong lateral electron coupling of pb nanowires on stepped si(111): angle-resolved photoemission studies

We employ angle-resolved photoemission to characterize the electronic band structure of the Pb "nanowire" array self-assembled on a stepped Si(111) surface. Despite the highly oriented nanowires observed in scanning tunneling microscopy images, we find essentially two-dimensional Fermi contours modulated one dimensionally perpendicular to the wires. This strong two-dimensional and quasi-one-dimensional nature of the band structure explains the stability and anisotropy of the metallic phase down to 4 K as reported recently. A simple tight-binding model with each Si nanoterrace covered by a densely packed Pb overlayer successfully reproduces this modulated band structure and quantifies the electron coupling within the "nanostripes" and the step-edge potential.

Bistability in the shape transition of strained islands

The equilibrium shape of a monatomic strained island on a substrate depends on the step free energies and the difference in surface stress between the island and the substrate. For small island sizes the step free energies dominate, resulting in compact islands. Beyond a critical island size, however, the strain energy becomes dominant and the island maximizes its perimeter, resulting in elongated islands. Here we show that for strained islands with force monopoles pointing in opposing directions at neighboring steps, a regime exists near the critical island size where both compact and elongated shapes can coexist.

Experimental evidence for spin-split bands in a one-dimensional chain structure

Gold atom chains on vicinal Si(111) surfaces exhibit an unusual doublet of half-filled bands, whose origin has remained uncertain. The splitting is identified by angle-resolved photoemission as a spin splitting induced by the spin-orbit interaction (Rashba effect), in agreement with a theoretical prediction by Sánchez-Portal, Riikonen, and Martin. This interaction leads to a characteristic pattern of avoided band crossings at a superlattice zone boundary. Two out of four crossings are avoided, with a minigap E_{G}=85 meV and a k offset of 0.05 A;{-1}.

Competing periodicities in fractionally filled one-dimensional bands

We present a variable temperature scanning tunneling microscopy and spectroscopy study of the Si(553)-Au atomic chain reconstruction. This quasi-one-dimensional system undergoes at least two charge density wave (CDW) transitions, which can be attributed to electronic instabilities in the fractionally filled 1D bands of the high-symmetry phase. Upon cooling, Si(553)-Au first undergoes a single-band Peierls distortion, resulting in period doubling along the chains. This Peierls state is ultimately overcome by a competing x3 CDW, which is accompanied by a x2 periodicity in between the chains. These locked-in periodicities indicate small charge transfer between the nearly 1/2-filled and 1/4-filled bands. The presence and the mobility of atomic-scale dislocations in the x3 CDW state indicates the possibility of manipulating phase solitons carrying a (spin, charge) of (1/2, +/- e/3) or (0, +/-2e/3).

Robust one-dimensional metallic band structure of silicide nanowires

Angle-resolved photoemission (ARP) is employed to investigate the electronic structure of an extremely anisotropic form of nanocrystals--GdSi(2-x) nanowires on Si(100). Using a stepped Si(100) surface, a well-ordered and uniformly oriented array of nanowires is formed along the step edges as confirmed by diffraction and microscopy. The ARP measurement discloses two distinct electronic bands near the Fermi level, which disperse one dimensionally along the nanowires. These bands are metallic with the electron filling of 1/4 and 2/5, respectively, and with the effective mass close to that of a free electron along the wires. The metallicity is robust down to 20 K, in contrast to metallic surface atomic chain systems, paving a way to further studies on one-dimensional physics of metallic nanowires.