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Sanctis S, Hoffmann RC, Koslowski N, Foro S, Bruns M, Schneider JJ. Aqueous Solution Processing of Combustible Precursor Compounds into Amorphous Indium Gallium Zinc Oxide (IGZO) Semiconductors for Thin Film Transistor Applications. Chem Asian J 2018; 13:3912-3919. [PMID: 30426698 DOI: 10.1002/asia.201801371] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/12/2018] [Revised: 10/07/2018] [Indexed: 11/08/2022]
Abstract
Combustion synthesis of semiconducting amorphous indium gallium zinc oxide IGZO (In:Ga:Zn, 7:1:1.5) thin films was carried out using urea nitrate precursor compounds of indium(III), gallium(III) and zinc(II). This approach provides further understanding towards the oxide formation process under a moderate temperature regime by employment of well-defined coordination compounds. All precursor compounds were fully characterized by spectroscopic techniques as well as by single crystal structure analysis. Their intrinsic thermal decomposition was studied by a combination of differential scanning calorimetry (DSC) and thermogravimetry coupled with mass spectrometry and infrared spectroscopy (TG-MS/IR). For all precursors a multistep decomposition involving a complex redox-reaction pathway under in situ formation of nitrogen containing molecular species was observed. Controlled thermal conversion of a mixture of the indium, gallium and zinc urea nitrate complexes into ternary amorphous IGZO films could thus be achieved. Thin film transistors (TFTs) were fabricated from a defined compositional mixture of the molecular precursors. The TFT devices exhibited decent charge carrier mobilities of 0.4 and 3.1 cm2 /(Vs) after annealing of the deposited films at temperatures as low as 250 and 350 °C, respectively. This approach represents a significant step further towards a low temperature solution processing of semiconducting thin films.
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Affiliation(s)
- Shawn Sanctis
- Department of Chemistry, Eduard-Zintl Institut für Anorganische und Physikalische Chemie, Technische Universität Darmstadt, Alarich-Weiss-Straße 12, 64287, Darmstadt, Germany
| | - Rudolf C Hoffmann
- Department of Chemistry, Eduard-Zintl Institut für Anorganische und Physikalische Chemie, Technische Universität Darmstadt, Alarich-Weiss-Straße 12, 64287, Darmstadt, Germany
| | - Nico Koslowski
- Department of Chemistry, Eduard-Zintl Institut für Anorganische und Physikalische Chemie, Technische Universität Darmstadt, Alarich-Weiss-Straße 12, 64287, Darmstadt, Germany
| | - Sabine Foro
- Department of Material Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 8, 64287, Darmstadt, Germany
| | - Michael Bruns
- Institute for Applied Materials-Karlsruhe Nano Micro Facility, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, D-76344, Eggenstein-Leopoldshafen, Germany
| | - Jörg J Schneider
- Department of Chemistry, Eduard-Zintl Institut für Anorganische und Physikalische Chemie, Technische Universität Darmstadt, Alarich-Weiss-Straße 12, 64287, Darmstadt, Germany
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Frolova EA, Palkina KK, Kochetov AN, Danilov VP. Crystal structure of magnesium(II) diaquatetracarbamidenitrate. RUSS J INORG CHEM+ 2012. [DOI: 10.1134/s0036023612030060] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
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Furmanova NG, Chernaya TS, Resnyanskiĭ VF, Sulaĭmankulov KS. Crystal structure of the binary complex of cobalt and zinc chlorides with carbamide [Co(OCN2H4)5(H2O)][ZnCl4]. CRYSTALLOGR REP+ 2010. [DOI: 10.1134/s1063774510020124] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
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