Nanoscale mapping of carrier collection in single nanowire solar cells using X-ray beam induced current

X-ray analysis of nanowires and nanowire devices: structure, function and synthesis

X-ray methods can offer unique insights into the structural and electronic properties of nanomaterials. Recent years have seen a dramatic improvement in both x-ray sources and x-ray optics, providing unprecedented resolution and sensitivity. These developments are particularly useful for nanowires, which are inherently small and give weak signals. This review gives an overview of how different x-ray methods have been used to analyze nanowires, showing the different types of insight that can be gained. The methods that are discussed include x-ray diffraction, x-ray fluorescence, x-ray photoelectron spectroscopy and x-ray photoelectron emission microscopy, as well as several others. The review is especially focused on high spatial resolution methods used at the single nanowire level, but it also covers ensemble experiments.

Single vertical InP nanowire diodes with low ideality factors contacted in-array for high-resolution optoelectronics

Nanowire (NW) optoelectronic and electrical devices offer unique advantages over bulk materials but are generally made by contacting entire NW arrays in parallel. In contrast, ultra-high-resolution displays and photodetectors require electrical connections to individual NWs inside an array. Here, we demonstrate a scheme for fabricating such single NW vertical devices by contacting individual NWs within a dense NW array. We contrast benzocyclobutene and SiO2planarization methods for these devices and find that the latter leads to dramatically improved processing yield as well as higher-quality diodes. Further, we find that replacing the metal top contact with transparent indium tin oxide does not decrease electrical performance, allowing for transparent top contacts. We improve the ideality factor of the devices from a previousn= 14 ton= 1.8, with the best devices as low asn= 1.5. The devices are characterized as both photodetectors with detectivities up to 2.45 AW-1and photocurrent densities of up to 185 mAcm-2under 0.76 suns illumination. Despite poor performance as light emitting diodes, the devices show great resilience to current densities up to 4 × 108mAcm-2. In combination with growth optimization, the flexibility of the processing allows for use of these devices as ultra-high-resolution photodetectors and displays.

Multi-Modal Characterization of Kesterite Thin-Film Solar Cells: Experimental results and numerical interpretation

We report a multi-modal study of electrical, chemical, and structural properties of a kesterite thin-film solar cell by combining the spatially-resolved X-ray beam induced current and fluorescence imaging techniques for...

Enhancing the NIR Photocurrent in Single GaAs Nanowires with Radial p-i-n Junctions by Uniaxial Strain

III-V compound nanowires have electrical and optical properties suitable for a wide range of applications, including photovoltaics and photodetectors. Furthermore, their elastic nature allows the use of strain engineering to enhance their performance. Here we have investigated the effect of mechanical strain on the photocurrent and the electrical properties of single GaAs nanowires with radial p-i-n junctions, using a nanoprobing setup. A uniaxial tensile strain of 3% resulted in an increase in photocurrent by more than a factor of 4 during NIR illumination. This effect is attributed to a decrease of 0.2 eV in nanowire bandgap energy, revealed by analysis of the current-voltage characteristics as a function of strain. This analysis also shows how other properties are affected by the strain, including the nanowire resistance. Furthermore, electron-beam-induced current maps show that the charge collection efficiency within the nanowire is unaffected by strain measured up to 0.9%.

Off-axis multilayer zone plate with 16 nm × 28 nm focus for high-resolution X-ray beam induced current imaging

Using multilayer zone plates (MZPs) as two-dimensional optics, focal spot sizes of less than 10 nm can be achieved, as we show here with a focus of 8.4 nm × 9.6 nm, but the need for order-sorting apertures prohibits practical working distances. To overcome this issue, here an off-axis illumination of a circular MZP is introduced to trade off between working distance and focal spot size. By this, the working distance between order-sorting aperture and sample can be more than doubled. Exploiting a 2D focus of 16 nm × 28 nm, real-space 2D mapping of local electric fields and charge carrier recombination using X-ray beam induced current in a single InP nanowire is demonstrated. Simulations show that a dedicated off-axis MZP can reach sub-10 nm focusing combined with reasonable working distances and low background, which could be used for in operando imaging of composition, carrier collection and strain in nanostructured devices.

When x-rays alter the course of your experiments

The continuing increase in the brilliance of synchrotron radiation beamlines allows for many new and exciting experiments that were impossible before the present generation of synchrotron radiation sources came on line. However, the exposure to such intense beams also tests the limits of what samples can endure. Whilst the effects of radiation induced damage in a static experiment often can easily be recognized by changes in the diffraction or spectroscopy curves, the influence of radiation on chemical or physical processes, where one expects curves to change, is less often recognized and can be misinterpreted as a 'real' result instead of as a 'radiation influenced result'. This is especially a concern in time-resolved materials science experiments using techniques as powder diffraction, small angle scattering and x-ray absorption spectroscopy. Here, the effects of radiation (5-50 keV) on some time-resolved processes in different types of materials and in different physical states are discussed. We show that such effects are not limited to soft matter and biology but rather can be found across the whole spectrum of materials research, over a large range of radiation doses and is not limited to very high brilliance beamlines.

In Situ Imaging of Ferroelastic Domain Dynamics in CsPbBr3 Perovskite Nanowires by Nanofocused Scanning X-ray Diffraction

The interest in metal halide perovskites has grown as impressive results have been shown in solar cells, light emitting devices, and scintillators, but this class of materials have a complex crystal structure that is only partially understood. In particular, the dynamics of the nanoscale ferroelastic domains in metal halide perovskites remains difficult to study. An ideal in situ imaging method for ferroelastic domains requires a challenging combination of high spatial resolution and long penetration depth. Here, we demonstrate in situ temperature-dependent imaging of ferroelastic domains in a single nanowire of metal halide perovskite, CsPbBr3. Scanning X-ray diffraction with a 60 nm beam was used to retrieve local structural properties for temperatures up to 140 °C. We observed a single Bragg peak at room temperature, but at 80 °C, four new Bragg peaks appeared, originating in different real-space domains. The domains were arranged in periodic stripes in the center and with a hatched pattern close to the edges. Reciprocal space mapping at 80 °C was used to quantify the local strain and lattice tilts, revealing the ferroelastic nature of the domains. The domains display a partial stability to further temperature changes. Our results show the dynamics of nanoscale ferroelastic domain formation within a single-crystal perovskite nanostructure, which is important both for the fundamental understanding of these materials and for the development of perovskite-based devices.

Direct Three-Dimensional Imaging of an X-ray Nanofocus Using a Single 60 nm Diameter Nanowire Device

Nanoscale X-ray detectors could allow higher resolution in imaging and diffraction experiments than established systems but are difficult to design due to the long absorption length of X-rays. Here, we demonstrate X-ray detection in a single nanowire in which the nanowire axis is parallel to the optical axis. In this geometry, X-ray absorption can occur along the nanowire length, while the spatial resolution is limited by the diameter. We use the device to make a high-resolution 3D image of the 88 nm diameter X-ray nanofocus at the Nanomax beamline, MAX IV synchrotron, by scanning the single pixel device in different planes along the optical axis. The images reveal fine details of the beam that are unattainable with established detectors and show good agreement with ptychography.

Implementing an Insect Brain Computational Circuit Using III-V Nanowire Components in a Single Shared Waveguide Optical Network

Recent developments in photonics include efficient nanoscale optoelectronic components and novel methods for subwavelength light manipulation. Here, we explore the potential offered by such devices as a substrate for neuromorphic computing. We propose an artificial neural network in which the weighted connectivity between nodes is achieved by emitting and receiving overlapping light signals inside a shared quasi 2D waveguide. This decreases the circuit footprint by at least an order of magnitude compared to existing optical solutions. The reception, evaluation, and emission of the optical signals are performed by neuron-like nodes constructed from known, highly efficient III-V nanowire optoelectronics. This minimizes power consumption of the network. To demonstrate the concept, we build a computational model based on an anatomically correct, functioning model of the central-complex navigation circuit of the insect brain. We simulate in detail the optical and electronic parts required to reproduce the connectivity of the central part of this network using previously experimentally derived parameters. The results are used as input in the full model, and we demonstrate that the functionality is preserved. Our approach points to a general method for drastically reducing the footprint and improving power efficiency of optoelectronic neural networks, leveraging the superior speed and energy efficiency of light as a carrier of information.

Hot electrons in a nanowire hard X-ray detector

Nanowire chip-based electrical and optical devices such as biochemical sensors, physical detectors, or light emitters combine outstanding functionality with a small footprint, reducing expensive material and energy consumption. The core functionality of many nanowire-based devices is embedded in their p-n junctions. To fully unleash their potential, such nanowire-based devices require - besides a high performance - stability and reliability. Here, we report on an axial p-n junction GaAs nanowire X-ray detector that enables ultra-high spatial resolution (~200 nm) compared to micron scale conventional ones. In-operando X-ray analytical techniques based on a focused synchrotron X-ray nanobeam allow probing the internal electrical field and observing hot electron effects at the nanoscale. Finally, we study device stability and find a selective hot electron induced oxidization in the n-doped segment of the p-n junction. Our findings demonstrate capabilities and limitations of p-n junction nanowires, providing insight for further improvement and eventual integration into on-chip devices.

Combining Nanofocused X-Rays with Electrical Measurements at the NanoMAX Beamline

The advent of nanofocused X-ray beams has allowed the study of single nanocrystals and complete nanoscale devices in a nondestructive manner, using techniques such as scanning transmission X-ray microscopy (STXM), X-ray fluorescence (XRF) and X-ray diffraction (XRD). Further insight into semiconductor devices can be achieved by combining these techniques with simultaneous electrical measurements. Here, we present a system for electrical biasing and current measurement of single nanostructure devices, which has been developed for the NanoMAX beamline at the fourth-generation synchrotron, MAX IV, Sweden. The system was tested on single InP nanowire devices. The mechanical stability was sufficient to collect scanning XRD and XRF maps with a 50 nm diameter focus. The dark noise of the current measurement system was about 3 fA, which allowed fly scan measurements of X-ray beam induced current (XBIC) in single nanowire devices.