X-SPEC: a 70 eV to 15 keV undulator beamline for X-ray and electron spectroscopies

A fully contained sample holder capable of electron-yield detection at soft X-ray energies

A holder has been developed that enables electron yield-detected soft X-ray spectroscopy of fully contained samples at low temperature. Crucially, this design uses elements of the sample containment to collect ejected electrons, removing the need to expose samples directly to the vacuum environment of the spectrometer. The design is modular and should be adaptable to a number of different endstation configurations, enabling spectroscopy of air-sensitive, radioactive and vacuum-sensitive (biological) samples.

High-transmission spectrometer for rapid resonant inelastic soft X-ray scattering (rRIXS) maps

The design and first results of a high-transmission soft X-ray spectrometer operated at the X-SPEC double-undulator beamline of the KIT Light Source are presented. As a unique feature, particular emphasis was placed on optimizing the spectrometer transmission by maximizing the solid angle and the efficiencies of spectrometer gratings and detector. A CMOS detector, optimized for soft X-rays, allows for quantum efficiencies of 90% or above over the full energy range of the spectrometer, while simultaneously offering short readout times. Combining an optimized control system at the X-SPEC beamline with continuous energy scans (as opposed to step scans), the high transmission of the spectrometer, and the fast readout of the CMOS camera, enable the collection of entire rapid resonant inelastic soft X-ray scattering maps in less than 1 min. Series of spectra at a fixed energy can be taken with a frequency of up to 5 Hz. Furthermore, the use of higher-order reflections allows a very wide energy range (45 to 2000 eV) to be covered with only two blazed gratings, while keeping the efficiency high and the resolving power E/ΔE above 1500 and 3000 with low- and high-energy gratings, respectively.

Rb Diffusion and Oxide Removal at the RbF-Treated Ga2O3/Cu(In,Ga)Se2 Interface in Thin-Film Solar Cells

We report on the chemical structure of Cu(In,Ga)Se2 (CIGSe) thin-film solar cell absorber surfaces and their interface with a sputter-deposited Ga2O3 buffer. The CIGSe samples were exposed to a RbF postdeposition treatment and an ammonia-based rinsing step, as used in corresponding thin-film solar cells. For a detailed chemical analysis of the impact of these treatments, we employed laboratory-based X-ray photoelectron spectroscopy, X-ray-excited Auger electron spectroscopy, and synchrotron-based hard X-ray photoelectron spectroscopy. On the RbF-treated surface, we find both Rb and F, which are then partly (Rb) and completely (F) removed by the rinse. The rinse also removes Ga-F, Ga-O, and In-O surface bonds and reduces the Ga/(Ga + In) ratio at the CIGSe absorber surface. After Ga2O3 deposition, we identify the formation of In oxides and the diffusion of Rb and small amounts of F into/onto the Ga2O3 buffer layer but no indication of the formation of hydroxides.

Satellite-Dominated Sulfur L2,3 X-ray Emission of Alkaline Earth Metal Sulfides

The sulfur L_2,3 X-ray emission spectra of the alkaline earth metal sulfides BeS, MgS, CaS, SrS, and BaS are investigated and compared with spectra calculations based on density functional theory. Very distinct spectral shapes are found for the different compounds. With decreasing electronegativity of the cation, that is, increasing ionic bonding character, the upper valence band width and its relative spectral intensity decrease. These general trends are qualitatively reproduced by the spectra calculations, which give quite an accurate description of the spectral shapes in the upper valence band region. On the low energy side of the sulfur 3s → 2p transition dominating the spectra, we find strong satellites caused by "semi-Auger" decays involving configuration interaction. These satellites, previously believed to be energetically forbidden for sulfur L_2,3 emission and only observed for the L_2,3 emission of Cl to Cr, increase in intensity as the bonding character becomes more ionic and dominate the spectra for SrS and BaS. The intensities, energies, and widths of the satellites vary strongly between the investigated compounds, giving a very specific spectral fingerprint that can be used for speciation analysis.

Characterization of Carbon Nanostructures by Photoelectron Spectroscopies

Recently, the scientific community experienced two revolutionary events. The first was the synthesis of single-layer graphene, which boosted research in many different areas. The second was the advent of quantum technologies with the promise to become pervasive in several aspects of everyday life. In this respect, diamonds and nanodiamonds are among the most promising materials to develop quantum devices. Graphene and nanodiamonds can be coupled with other carbon nanostructures to enhance specific properties or be properly functionalized to tune their quantum response. This contribution briefly explores photoelectron spectroscopies and, in particular, X-ray photoelectron spectroscopy (XPS) and then turns to the present applications of this technique for characterizing carbon nanomaterials. XPS is a qualitative and quantitative chemical analysis technique. It is surface-sensitive due to its limited sampling depth, which confines the analysis only to the outer few top-layers of the material surface. This enables researchers to understand the surface composition of the sample and how the chemistry influences its interaction with the environment. Although the chemical analysis remains the main information provided by XPS, modern instruments couple this information with spatial resolution and mapping or with the possibility to analyze the material in operando conditions at nearly atmospheric pressures. Examples of the application of photoelectron spectroscopies to the characterization of carbon nanostructures will be reviewed to present the potentialities of these techniques.

Study on total reflection performance of films grown by atomic layer deposition relevant to X-ray reflective optics

For X-ray reflective optics that work based on the concept of total external reflection, coating the reflector surface with high-density film is a common idea to enhance performance. Atomic layer deposition (ALD) has been proven to be a promising way to coat the reflector surface with a large curvature, even the inner surface of an X-ray capillary. In this paper, HfO₂ and iridium films were prepared on flat silicon and glass substrates via ALD, and X-ray reflectivity (XRR) was used as a main tool to investigate the effect of film properties on the total reflection performance.