1
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Liang YC, Zhang SF, Cao Q, Jiang LY, Jiao YF, Wang Y, Zhang HL, Wang HY, Shan CX, Kuang LM, Jing H, Liu KK. Phosphorescent Elastomer through Carbon Nanodots Microphase Engineering for Diverse Applications. NANO LETTERS 2025; 25:8713-8722. [PMID: 40384215 DOI: 10.1021/acs.nanolett.5c01655] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2025]
Abstract
Stretchable phosphorescent elastomers possess great potential in flexible devices and wearable electronics. However, traditional room-temperature phosphorescent (RTP) materials exhibit poor stretchability, thereby presenting a challenge in reconciling the contradiction between RTP performance and stretchability. Here, we present carbon nanodots (CNDs) microphase engineering strategy that integrates CNDs with rigid microconfinement within a flexible matrix, demonstrating phosphorescent elastomers with high performance. The resultant elastomers exhibit a maximum stretchability of up to 97% and a phosphorescence lifetime of up to 1119 ms. Subsequently, the universality of this approach is further demonstrated by tuning the phosphorescence wavelength across the visible-light range. These elastomers maintain stable optical properties under diverse and complex conditions. Potential applications, including 3D art, anticounterfeiting, and flexible displays, showcase the versatility of this design. This work provides a new pathway for designing stretchable phosphorescent elastomers and expands the application potential of phosphorescent materials.
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Affiliation(s)
- Ya-Chuan Liang
- School of Electronics and Information, Zhengzhou University of Light Industry, Zhengzhou 450002, China
- Academy for Quantum Science and Technology, Zhengzhou University of Light Industry, Zhengzhou 450002, China
| | - Si-Fan Zhang
- College of Electrical and Information Engineering, Zhengzhou University of Light Industry, Zhengzhou 450002, China
| | - Qing Cao
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, School of Physics and Laboratory of Zhongyuan Light, Zhengzhou University, Zhengzhou 450001, China
| | - Li-Ying Jiang
- School of Electronics and Information, Zhengzhou University of Light Industry, Zhengzhou 450002, China
- Academy for Quantum Science and Technology, Zhengzhou University of Light Industry, Zhengzhou 450002, China
| | - Ya-Feng Jiao
- School of Electronics and Information, Zhengzhou University of Light Industry, Zhengzhou 450002, China
- Academy for Quantum Science and Technology, Zhengzhou University of Light Industry, Zhengzhou 450002, China
| | - Yan Wang
- School of Electronics and Information, Zhengzhou University of Light Industry, Zhengzhou 450002, China
- Academy for Quantum Science and Technology, Zhengzhou University of Light Industry, Zhengzhou 450002, China
| | - Hui-Lai Zhang
- School of Electronics and Information, Zhengzhou University of Light Industry, Zhengzhou 450002, China
- Academy for Quantum Science and Technology, Zhengzhou University of Light Industry, Zhengzhou 450002, China
| | - Hai-Yan Wang
- School of Electronics and Information, Zhengzhou University of Light Industry, Zhengzhou 450002, China
- Academy for Quantum Science and Technology, Zhengzhou University of Light Industry, Zhengzhou 450002, China
| | - Chong-Xin Shan
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, School of Physics and Laboratory of Zhongyuan Light, Zhengzhou University, Zhengzhou 450001, China
| | - Le-Man Kuang
- Academy for Quantum Science and Technology, Zhengzhou University of Light Industry, Zhengzhou 450002, China
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Department of Physics and Synergetic Innovation Center for Quantum Effects and Applications, Hunan Normal University, Changsha 410081, China
| | - Hui Jing
- Academy for Quantum Science and Technology, Zhengzhou University of Light Industry, Zhengzhou 450002, China
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Department of Physics and Synergetic Innovation Center for Quantum Effects and Applications, Hunan Normal University, Changsha 410081, China
| | - Kai-Kai Liu
- Henan Key Laboratory of Diamond Optoelectronic Material and Devices, School of Physics and Laboratory of Zhongyuan Light, Zhengzhou University, Zhengzhou 450001, China
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2
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Zhou H, Kim H, Jeong WJ, Lee T. Toward Intrinsically Stretchable OLEDs with High Efficiency. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025; 37:e2420008. [PMID: 39981776 PMCID: PMC11983261 DOI: 10.1002/adma.202420008] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2024] [Revised: 02/04/2025] [Indexed: 02/22/2025]
Abstract
Wearable electronics require stretchable displays that can withstand large and repeated mechanical deformation without failure. Intrinsically stretchable organic light-emitting diodes (ISOLEDs) that operate under DC voltage provide promising candidates for wearable display applications. However, the lack of sophisticated stretchable materials and processing techniques suitable for ISOLEDs results in a significant deficit in the efficiency of state-of-the-art ISOLEDs compared to industrial standards. The design of stretchable conducting and semiconducting materials poses a significant challenge because of trade-off relationships between stretchability and properties such as conductivity and charge carrier mobility. To increase the efficiency of ISOLEDs to meet industrial standards, strategies to overcome these trade-offs must be developed. This perspective discusses recent progress and challenges in designing stretchable electrodes, light-emitting materials, transport materials, and potential applications of ISOLEDs. It provides a useful guide in this field to develop efficient ISOLEDs for system-level integration.
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Affiliation(s)
- Huanyu Zhou
- Department of Materials Science and EngineeringSeoul National UniversitySeoul08826Republic of Korea
- BK21 PLUS SNU Materials Division for Educating Creative Global LeadersSeoul National UniversitySeoul08826Republic of Korea
| | - Hyun‐Wook Kim
- Department of Materials Science and EngineeringSeoul National UniversitySeoul08826Republic of Korea
| | - Woo Jin Jeong
- Department of Materials Science and EngineeringSeoul National UniversitySeoul08826Republic of Korea
| | - Tae‐Woo Lee
- Department of Materials Science and EngineeringSeoul National UniversitySeoul08826Republic of Korea
- Institute of Engineering ResearchInterdisciplinary Program in BioengineeringResearch Institute of Advanced MaterialsSoft FoundrySeoul National UniversitySeoul08826Republic of Korea
- SN Display Co., Ltd.Seoul08826Republic of Korea
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3
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Zheng YQ, Bao Z. Molecularly Designed and Nanoconfined Polymer Electronic Materials for Skin-like Electronics. ACS CENTRAL SCIENCE 2024; 10:2188-2199. [PMID: 39735315 PMCID: PMC11672543 DOI: 10.1021/acscentsci.4c01541] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/17/2024] [Revised: 11/07/2024] [Accepted: 11/08/2024] [Indexed: 12/31/2024]
Abstract
Stretchable electronics have seen substantial development in skin-like mechanical properties and functionality thanks to the advancements made in intrinsically stretchable polymer electronic materials. Nanoscale phase separation of polymer materials within an elastic matrix to form one-dimensional nanostructures, namely nanoconfinement, effectively reduces conformational disorders that have long impeded charge transport properties of conjugated polymers. Nanoconfinement results in enhanced charge transport and the addition of skin-like properties. In this Outlook, we highlight the current understanding of structure-property relationships for intrinsically stretchable electronic materials with a focus on the nanoconfinement strategy as a promising approach to incorporate skin-like properties and other functionalities without compromising charge transport. We outline emerging directions and challenges for intrinsically stretchable electronic materials with the aim of constructing skin-like electronic systems.
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Affiliation(s)
- Yu-Qing Zheng
- National
Key Laboratory of Advanced Micro and Nano Manufacture Technology;
Beijing Advanced Innovation Center for Integrated Circuits, School
of Integrated Circuits, Peking University, Beijing 100871, China
| | - Zhenan Bao
- Department
of Chemical Engineering, Stanford University, Stanford, California 94305, United States
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4
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Ma J, Xu M, Zhuo Z, Wang K, Li Q, Li H, Feng Q, Chen W, Yu N, Li M, Xie L, Lin J. Plasticizer Design Principle of "Like Dissolves Like": Semiconductor Fluid Plasticized Stretchable Fully π-Conjugated Polymers Films for Uniform Large-Area and Flexible Deep-Blue Polymer Light-Emitting Diodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2411449. [PMID: 39543791 DOI: 10.1002/adma.202411449] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/04/2024] [Revised: 10/24/2024] [Indexed: 11/17/2024]
Abstract
Physical blending of fully π-conjugated polymers (FπCPs) is an effective strategy to achieve intrinsically stretchable films for the fabrication of flexible optoelectronic devices, but easily causes phase separation, nonuniform morphology and uncontrollable photo-electronic processing. This may cause low efficiency, unstable and nonuniform emission, and poor color purity, which are undesirable for deep-blue flexible polymer light-emitting diodes (FPLEDs). Herein, a "Like Dissolves Like" design principle to prepare semiconductor fluid plasticizers (SFPs) is established and intrinsically stretchable FπCPs films via external plasticization for high-performance deep-blue FPLEDs are developed. Three fundamental requirements are proposed, "similar conjugated skeleton, similar molecular polarity, and similar electronic structures," to prepare model-matched nonpolar M1 and polar M2 plasticizers for poly(9,9-dioctylfluorene) (PFO). Large-area plasticized PFO films exhibit an efficient, narrowband, and stable ultra-deep-blue electroluminescence (FWHM < 40 nm, CIE: 0.12, 0.04), uniform morphology, and excellent intrinsic stretchability (fracture strain >20% and crack-onset strain >120%). Efficient and uniform deep-blue FPLEDs based on stretchable PFO films are fabricated with a high brightness of ≈3000 cd cm-2. Finally, blended PFO films exhibit outstanding stretch-deformation cycling stability of their deep-blue electroluminescent behavior, confirming the effectiveness of the "Like Dissolves Like" principle to design matched SFPs for stretchable FπCP films in flexible electronics.
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Affiliation(s)
- Jingyao Ma
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Man Xu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Zhiqiang Zhuo
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Kuande Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Qianyi Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Hao Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Quanyou Feng
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Wenyu Chen
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Ningning Yu
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Mengyuan Li
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Linghai Xie
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Jinyi Lin
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
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5
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Lv D, Liu X, Li J, Hou S, Li Y, Wang Z, Zhang Q, Wang S, Yu X, Han Y. Improving the Uniformity and Stretchability of Inkjet-Printed Films by Adding the Surfactant Triton X. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39568366 DOI: 10.1021/acsami.4c15774] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/22/2024]
Abstract
Stretchable organic light-emitting diodes (OLEDs) are a key component of stretchable electronics. Inkjet printing is a potential processing method for stretchable and flexible OLEDs. However, improving the uniformity and stretchability of the emission layer (EML) prepared by inkjet printing is challenging. Here, we propose a strategy to simultaneously improve the uniformity and stretchability of inkjet-printed films by tuning the Marangoni flow and increasing the free volume. To verify our idea, Triton X (TX) with a lipophilic alkyl end and a hydrophilic hydroxyl end was added to the Super Yellow (SY)/polystyrene-block-polybutadiene-block-polystyrene (SBS) blend film. TX played two roles. (1) To inhibit the coffee ring effect. The surface tension of the solution decreased because the hydrophilic ends of TX repelled with the nonpolar solvent toluene to decrease the cohesion of toluene molecules on the surface. Thus, the surface tension at the edges was lower than in the middle due to the high evaporation rate at the edges during solvent evaporation. This resulted in the generation of the inward Marangoni flow to drive the solute toward the middle. Therefore, the coffee ring effect was inhibited, and a uniform film was formed. (2) To improve the stretchability. With TX, the glass transition temperature decreased because TX acted as a plasticizer to insert between the polymer chains due to the attraction between the lipophilic ends of TX and the alkyl side chains of SY. This provided more free volume for the polymer chains to move and orientate under strain, which is beneficial for the stretchability. Finally, we fabricated OLEDs with the inkjet-printed stretchable EML. At 100% strain, the luminance kept 70% of the initial luminance, much higher than that without the surfactant (33%).
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Affiliation(s)
- Dong Lv
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, PR China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei 230026, PR China
| | - Xuelei Liu
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, PR China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei 230026, PR China
| | - Junhang Li
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, PR China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei 230026, PR China
| | - Saiyin Hou
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, PR China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei 230026, PR China
| | - Yinghan Li
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, PR China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei 230026, PR China
| | - Zehao Wang
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, PR China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei 230026, PR China
| | - Qiang Zhang
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, PR China
| | - Shumeng Wang
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, PR China
| | - Xinhong Yu
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, PR China
| | - Yanchun Han
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, PR China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei 230026, PR China
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6
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Du B, Xiong S, Sun L, Tagawa Y, Inoue D, Hashizume D, Wang W, Guo R, Yokota T, Wang S, Ishida Y, Lee S, Fukuda K, Someya T. A water-resistant, ultrathin, conformable organic photodetector for vital sign monitoring. SCIENCE ADVANCES 2024; 10:eadp2679. [PMID: 39047100 PMCID: PMC11268404 DOI: 10.1126/sciadv.adp2679] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/17/2024] [Accepted: 06/20/2024] [Indexed: 07/27/2024]
Abstract
Ultrathin flexible photodetectors can be conformably integrated with the human body, offering promising advancements for emerging skin-interfaced sensors. However, the susceptibility to degradation in ambient and particularly in aqueous environments hinders their practical application. Here, we report a 3.2-micrometer-thick water-resistant organic photodetector capable of reliably monitoring vital sign while submerged underwater. Embedding the organic photoactive layer in an adhesive elastomer matrix induces multidimensional hybrid phase separation, enabling high adhesiveness of the photoactive layer on both the top and bottom surfaces with maintained charge transport. This improves the water-immersion stability of the photoactive layer and ensures the robust sealing of interfaces within the device, notably suppressing fluid ingression in aqueous environments. Consequently, our fabricated ultrathin organic photodetector demonstrates stability in deionized water or cell nutrient media over extended periods, high detectivity, and resilience to cyclic mechanical deformation. We also showcase its potential for vital sign monitoring while submerged underwater.
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Affiliation(s)
- Baocai Du
- Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
- RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Sixing Xiong
- RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Lulu Sun
- Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Yusaku Tagawa
- Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Daishi Inoue
- RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Daisuke Hashizume
- RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Wenqing Wang
- Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
- RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Ruiqi Guo
- RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Tomoyuki Yokota
- Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
- Institute of Engineering Innovation, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Shuxu Wang
- RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Yasuhiro Ishida
- RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Sunghoon Lee
- RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
- Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Kenjiro Fukuda
- RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
- Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Takao Someya
- Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
- RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
- Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
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7
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Zhang M, Sun J, Zhao G, Tong Y, Wang X, Yu H, Xue P, Zhao X, Tang Q, Liu Y. Dielectric Design of High Dielectric Constant Poly(Urea-Urethane) Elastomer for Low-Voltage High-Mobility Intrinsically Stretchable All-Solution-Processed Organic Transistors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2311527. [PMID: 38334257 DOI: 10.1002/smll.202311527] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/11/2023] [Revised: 01/26/2024] [Indexed: 02/10/2024]
Abstract
Stretchable organic transistors for skin-like biomedical applications require low-voltage operation to accommodate limited power supply and safe concerns. However, most of the currently reported stretchable organic transistors operate at relatively high voltages. Decreasing their operational voltage while keeping the high mobility still remains a key challenge. Here, the study presents a new dielectric design to achieve high-dielectric constant poly(urea-urethane) (PUU) elastomer, by incorporating a flexible small-molecular diamine crosslinking agent 4-aminophenyl disulfide (APDS) into the main chain of (poly (propylene glycol), tolylene 2,4-diiso-cyanate terminated) (PPG-TDI). Compared with commercial elastomers, the PUU elastomer as dielectric of the stretchable organic transistors shows the outstanding advantages including lower surface roughness (0.33 nm), higher adhesion (45.18 nN), higher dielectric constant (13.5), as well as higher stretchability (896%). The PUU dielectric enables the intrinsically stretchable, all-solution-processed organic transistor to operate at a low operational voltage down to -10 V, while preserving a substantial mobility of 1.39 cm2 V-1 s-1. Impressively, the transistor also demonstrates excellent electrical stability under repeated switching of 10 000 cycles, and remarkable mechanical robustness when stretched up to 100%. The work opens up a new molecular engineering strategy to successfully realize low-voltage high-mobility stretchable all-solution-processed organic transistors.
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Affiliation(s)
- Mingxin Zhang
- Centre for Advanced Optoelectronic Functional Materials Research, Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, P. R. China
| | - Jing Sun
- Centre for Advanced Optoelectronic Functional Materials Research, Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, P. R. China
| | - Guodong Zhao
- Centre for Advanced Optoelectronic Functional Materials Research, Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, P. R. China
| | - Yanhong Tong
- Centre for Advanced Optoelectronic Functional Materials Research, Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, P. R. China
| | - Xue Wang
- Centre for Advanced Optoelectronic Functional Materials Research, Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, P. R. China
| | - Hongyan Yu
- Centre for Advanced Optoelectronic Functional Materials Research, Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, P. R. China
| | - Peng Xue
- Centre for Advanced Optoelectronic Functional Materials Research, Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, P. R. China
| | - Xiaoli Zhao
- Centre for Advanced Optoelectronic Functional Materials Research, Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, P. R. China
| | - Qingxin Tang
- Centre for Advanced Optoelectronic Functional Materials Research, Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, P. R. China
| | - Yichun Liu
- Centre for Advanced Optoelectronic Functional Materials Research, Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, P. R. China
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8
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Chen W, Yu N, Gong H, Li M, Xu W, Zhuo Z, Sun Z, Ni M, Huang W, Yang J, Lin Y, Wang L, Li H, Liang X, Sun N, Sun L, Bai L, Han Y, Tao Y, Xu M, Yin C, An X, Lin J, Huang W. Elastic-Plastic Fully π-Conjugated Polymer with Excellent Energy Dissipation Capacity for Ultra-Deep-Blue Flexible Polymer Light-Emitting Diodes with CIE y = 0.04. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2402708. [PMID: 38837440 DOI: 10.1002/adma.202402708] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/22/2024] [Revised: 05/23/2024] [Indexed: 06/07/2024]
Abstract
Emerging intrinsically flexible fully π-conjugated polymers (FπCPs) are a promising functional material for flexible optoelectronics, attributed to their potential interchain interpenetration and entanglement. However, the challenge remains in obtaining elastic-plastic FπCPs with intrinsic robust optoelectronic property and excellent long-term and cycling deformation stability simultaneously for applications in deep-blue flexible polymer light-emitting diodes (PLEDs). This study, demonstrates a series of elastic-plastic FπCPs (P1-P4) with an excellent energy dissipation capacity via side-chain internal plasticization for the ultra-deep-blue flexible PLEDs. First, the freestanding P1 film exhibited a maximum fracture strain of 34.6%. More interestingly, the elastic behavior is observed with a low strain (≤10%), and the stretched film with a high deformation (>10%) attributed to plastic processing revealed the robust capacity to realize energy absorption and release. The elastic-plastic P1 film exhibits outstanding ultra-deep-blue emission, with an efficiency of 56.38%. Subsequently, efficient PLEDs are fabricated with an ultra-deep-blue emission of CIE (0.16, 0.04) and a maximum external quantum efficiency of 1.73%. Finally, stable and efficient ultra-deep-blue electroluminescence are obtained from PLEDs based on stretchable films with different strains and cycling deformations, suggesting excellent elastic-plastic behavior and deformation stability for flexible electronics.
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Affiliation(s)
- Wenyu Chen
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Ningning Yu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Huaqiang Gong
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Mengyuan Li
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Weifeng Xu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Zhiqiang Zhuo
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Zhiyang Sun
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Mingjian Ni
- The Institute of Flexible Electronics, (IFE Future Technologies), Xiamen University(XMU), 422 Siming South Road, Xiamen, Fujian, 361005, China
| | - Wenxin Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Jing Yang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Yingru Lin
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Lizhi Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Hao Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Xinyu Liang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Ning Sun
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Lili Sun
- School of Flexible Electronics (SoFE) & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, 66 Gongchang Road, Shenzhen, 518107, China
| | - Lubing Bai
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Yamin Han
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Youtian Tao
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Man Xu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Chengrong Yin
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Xiang An
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Jinyi Lin
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
- School of Flexible Electronics (SoFE) & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, 66 Gongchang Road, Shenzhen, 518107, China
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9
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Nam TU, Vo NTP, Jeong MW, Jung KH, Lee SH, Lee TI, Oh JY. Intrinsically Stretchable Floating Gate Memory Transistors for Data Storage of Electronic Skin Devices. ACS NANO 2024; 18:14558-14568. [PMID: 38761154 DOI: 10.1021/acsnano.4c02303] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2024]
Abstract
To propel electronic skin (e-skin) to the next level by integrating artificial intelligence features with advanced sensory capabilities, it is imperative to develop stretchable memory device technology. A stretchable memory device for e-skin must offer, in particular, long-term data storage while ensuring the security of personal information under any type of deformation. However, despite the significance of these needs, technology related to stretchable memory devices remains in its infancy. Here, we report an intrinsically stretchable floating gate (FG) polymer memory transistor. The device features a dual-stimuli (optical and electrical) writing system to prevent easy erasure of recorded data. An FG comprising an intermixture of Ag nanoparticles and elastomer and with proper energy-band alignment between the semiconductor and dielectric facilitated sustainable memory performance, while achieving a high memory on/off ratio (>105) and a long retention time (106 s) with the ability to withstand 50% uniaxial or 30% biaxial strain. In addition, our memory transistor exhibited high mechanical durability over multiple stretching cycles (1000 times), along with excellent environmental stability with respect to factors such as temperature, moisture, air, and delamination. Finally, we fabricated a 7 × 7 active-matrix memory transistor array for personalized storage of e-skin data and successfully demonstrated its functionality.
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Affiliation(s)
- Tae Uk Nam
- Department of Chemical Engineering (Integrated Engineering Program), Kyung Hee University, Yongin, Gyeonggi 17104, Korea
| | - Ngoc Thanh Phuong Vo
- Department of Chemical Engineering (Integrated Engineering Program), Kyung Hee University, Yongin, Gyeonggi 17104, Korea
| | - Min Woo Jeong
- Department of Chemical Engineering (Integrated Engineering Program), Kyung Hee University, Yongin, Gyeonggi 17104, Korea
| | - Kyu Ho Jung
- Department of Chemical Engineering (Integrated Engineering Program), Kyung Hee University, Yongin, Gyeonggi 17104, Korea
| | - Seung Hwan Lee
- Department of Electronics Engineering, Kyung Hee University, Yongin, Gyeonggi 17104, Korea
| | - Tae Il Lee
- Department of Materials Science and Engineering, Gachon University, Seong-nam, Gyeonggi 13120, Korea
| | - Jin Young Oh
- Department of Chemical Engineering (Integrated Engineering Program), Kyung Hee University, Yongin, Gyeonggi 17104, Korea
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10
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Gan N, Zou X, Qian Z, Lv A, Wang L, Ma H, Qian HJ, Gu L, An Z, Huang W. Stretchable phosphorescent polymers by multiphase engineering. Nat Commun 2024; 15:4113. [PMID: 38750029 PMCID: PMC11096371 DOI: 10.1038/s41467-024-47673-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/03/2023] [Accepted: 04/09/2024] [Indexed: 05/18/2024] Open
Abstract
Stretchable phosphorescence materials potentially enable applications in diverse advanced fields in wearable electronics. However, achieving room-temperature phosphorescence materials simultaneously featuring long-lived emission and good stretchability is challenging because it is hard to balance the rigidity and flexibility in the same polymer. Here we present a multiphase engineering for obtaining stretchable phosphorescent materials by combining stiffness and softness simultaneously in well-designed block copolymers. Due to the microphase separation, copolymers demonstrate an intrinsic stretchability of 712%, maintaining an ultralong phosphorescence lifetime of up to 981.11 ms. This multiphase engineering is generally applicable to a series of binary and ternary initiator systems with color-tunable phosphorescence in the visible range. Moreover, these copolymers enable multi-level volumetric data encryption and stretchable afterglow display. This work provides a fundamental understanding of the nanostructures and material properties for designing stretchable materials and extends the potential of phosphorescence polymers.
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Affiliation(s)
- Nan Gan
- Frontiers Science Center for Flexible Electronics (FSCFE), MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, China
| | - Xin Zou
- Frontiers Science Center for Flexible Electronics (FSCFE), MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, China
| | - Zhao Qian
- State Key Laboratory of Supramolecular Structure and Materials, Institute of Theoretical Chemistry, College of Chemistry, Jilin University, Changchun, 130012, China
| | - Anqi Lv
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Lan Wang
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Huili Ma
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Hu-Jun Qian
- State Key Laboratory of Supramolecular Structure and Materials, Institute of Theoretical Chemistry, College of Chemistry, Jilin University, Changchun, 130012, China
| | - Long Gu
- Frontiers Science Center for Flexible Electronics (FSCFE), MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, China.
- Research and Development Institute of Northwestern Polytechnical University in Shenzhen, Shenzhen, 518057, China.
| | - Zhongfu An
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics (FSCFE), MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, China.
- Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
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11
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Lee GH, Kim K, Kim Y, Yang J, Choi MK. Recent Advances in Patterning Strategies for Full-Color Perovskite Light-Emitting Diodes. NANO-MICRO LETTERS 2023; 16:45. [PMID: 38060071 PMCID: PMC10704014 DOI: 10.1007/s40820-023-01254-8] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Accepted: 10/19/2023] [Indexed: 12/08/2023]
Abstract
Metal halide perovskites have emerged as promising light-emitting materials for next-generation displays owing to their remarkable material characteristics including broad color tunability, pure color emission with remarkably narrow bandwidths, high quantum yield, and solution processability. Despite recent advances have pushed the luminance efficiency of monochromic perovskite light-emitting diodes (PeLEDs) to their theoretical limits, their current fabrication using the spin-coating process poses limitations for fabrication of full-color displays. To integrate PeLEDs into full-color display panels, it is crucial to pattern red-green-blue (RGB) perovskite pixels, while mitigating issues such as cross-contamination and reductions in luminous efficiency. Herein, we present state-of-the-art patterning technologies for the development of full-color PeLEDs. First, we highlight recent advances in the development of efficient PeLEDs. Second, we discuss various patterning techniques of MPHs (i.e., photolithography, inkjet printing, electron beam lithography and laser-assisted lithography, electrohydrodynamic jet printing, thermal evaporation, and transfer printing) for fabrication of RGB pixelated displays. These patterning techniques can be classified into two distinct approaches: in situ crystallization patterning using perovskite precursors and patterning of colloidal perovskite nanocrystals. This review highlights advancements and limitations in patterning techniques for PeLEDs, paving the way for integrating PeLEDs into full-color panels.
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Affiliation(s)
- Gwang Heon Lee
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Kiwook Kim
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Yunho Kim
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Jiwoong Yang
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea.
- Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea.
| | - Moon Kee Choi
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea.
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