High-Temperature Excitonic Condensation in 2D Lattice

Exploration of high-temperature bosonic condensation is of significant importance for the fundamental many-body physics and applications in nanodevices, which, however, remains a huge challenge. Here, in combination of many-body perturbation theory and first-principles calculations, a new-type spatially indirect exciton can be optically generated in two-dimensional (2D) Bi2S2Te because of its unique structure feature. In particular, the spin-singlet spatially indirect excitons in Bi2S2Te monolayer are dipole/parity allowed and reveal befitting characteristics for excitonic condensation, such as small effective mass and satisfied dilute limitation. Based on the layered Bi2S2Te, the possibility of the high-temperature excitonic Bose-Einstein condensation (BEC) and superfluid state in two dimensions, which goes beyond the current paradigms in both experiment and theory, are proved. It should be highlighted that record-high phase transition temperatures of 289.7 and 72.4 K can be theoretically predicted for the excitonic BEC and superfluidity in the atomic thin Bi2S2Te, respectively. It therefore can be confirmed that Bi2S2Te featuring bound bosonic states is a fascinating 2D platform for exploring the high-temperature excitonic condensation and applications in such as quantum computing and dissipationless nanodevices.

Controlled interlayer exciton ionization in an electrostatic trap in atomically thin heterostructures

Atomically thin semiconductor heterostructures provide a two-dimensional (2D) device platform for creating high densities of cold, controllable excitons. Interlayer excitons (IEs), bound electrons and holes localized to separate 2D quantum well layers, have permanent out-of-plane dipole moments and long lifetimes, allowing their spatial distribution to be tuned on demand. Here, we employ electrostatic gates to trap IEs and control their density. By electrically modulating the IE Stark shift, electron-hole pair concentrations above 2 × 1012 cm-2 can be achieved. At this high IE density, we observe an exponentially increasing linewidth broadening indicative of an IE ionization transition, independent of the trap depth. This runaway threshold remains constant at low temperatures, but increases above 20 K, consistent with the quantum dissociation of a degenerate IE gas. Our demonstration of the IE ionization in a tunable electrostatic trap represents an important step towards the realization of dipolar exciton condensates in solid-state optoelectronic devices.

Infrared Interlayer Excitons in Twist-Free MoTe2/MoS2 Heterobilayers

Excitonic devices based on interlayer excitons in van der Waals heterobilayers are a promising platform for advancing photoelectric interconnection telecommunications. However, the absence of exciton emission in the crucial telecom C-band has constrained their practical applications. Here, this limitation is addressed by reporting exciton emission at 0.8 eV (1550 nm) in a chemically vapor-deposited, strictly aligned MoTe2/MoS2 heterobilayer, resulting from the direct bandgap transitions of interlayer excitons as identified by momentum-space imaging of their electrons and holes. The decay mechanisms dominated by direct radiative recombination ensure constant emission quantum yields, a basic demand for efficient excitonic devices. The atomically sharp interface enables the resolution of two narrowly-splitter transitions induced by spin-orbit coupling, further distinguished through the distinct Landé g-factors as the fingerprint of spin configurations. By electrical control, the double transitions coupling into opposite circularly-polarized photon modes, preserve or reverse the helicities of the incident light with a degree of polarization up to 90%. The Stark effect tuning extends the emission energy range by over 150 meV (270 nm), covering the telecom C-band. The findings provide a material platform for studying the excitonic complexes and significantly boost the application prospects of excitonic devices in silicon photonics and all-optical telecommunications.

Electrical Control and Transport of Tightly Bound Interlayer Excitons in a MoSe_{2}/hBN/MoSe_{2} Heterostructure

Controlling interlayer excitons in Van der Waals heterostructures holds promise for exploring Bose-Einstein condensates and developing novel optoelectronic applications, such as excitonic integrated circuits. Despite intensive studies, several key fundamental properties of interlayer excitons, such as their binding energies and interactions with charges, remain not well understood. Here we report the formation of momentum-direct interlayer excitons in a high-quality MoSe_{2}/hBN/MoSe_{2} heterostructure under an electric field, characterized by bright photoluminescence (PL) emission with high quantum yield and a narrow linewidth of less than 4 meV. These interlayer excitons show electrically tunable emission energy spanning ∼180  meV through the Stark effect, and exhibit a sizable binding energy of ∼81  meV in the intrinsic regime, along with trion binding energies of a few millielectronvolts. Remarkably, we demonstrate the long-range transport of interlayer excitons with a characteristic diffusion length exceeding 10  μm, which can be attributed, in part, to their dipolar repulsive interactions. Spatially and polarization-resolved spectroscopic studies reveal rich exciton physics in the system, such as valley polarization, local trapping, and the possible existence of dark interlayer excitons. The formation and transport of tightly bound interlayer excitons with narrow linewidth, coupled with the ability to electrically manipulate their properties, open exciting new avenues for exploring quantum many-body physics, including excitonic condensate and superfluidity, and for developing novel optoelectronic devices, such as exciton and photon routers.

Growth of Wafer-Scale Single-Crystal 2D Semiconducting Transition Metal Dichalcogenide Monolayers

Due to extraordinary electronic and optoelectronic properties, large-scale single-crystal two-dimensional (2D) semiconducting transition metal dichalcogenide (TMD) monolayers have gained significant interest in the development of profit-making cutting-edge nano and atomic-scale devices. To explore the remarkable properties of single-crystal 2D monolayers, many strategies are proposed to achieve ultra-thin functional devices. Despite substantial attempts, the controllable growth of high-quality single-crystal 2D monolayer still needs to be improved. The quality of the 2D monolayer strongly depends on the underlying substrates primarily responsible for the formation of grain boundaries during the growth process. To restrain the grain boundaries, the epitaxial growth process plays a crucial role and becomes ideal if an appropriate single crystal substrate is selected. Therefore, this perspective focuses on the latest advances in the growth of large-scale single-crystal 2D TMD monolayers in the light of enhancing their industrial applicability. In the end, recent progress and challenges of 2D TMD materials for various potential applications are highlighted.

Strongly Localized Moiré Exciton in Twisted Homobilayers

Artificially molding exciton flux is the cornerstone for developing promising excitonic devices. In the emerging hetero/homobilayers, the spatial separated charges prolong exciton lifetimes and create out-plane dipoles, facilitating electrically control exciton flux on a large scale, and the nanoscale periodic moiré potentials arising from twist-angle or/and lattice mismatch can substantially alter exciton dynamics, which are mainly proved in the heterostructures. However, the spatially indirect excitons dynamics in homobilayers without lattice mismatch remain elusive. Here the nonequilibrium dynamics of indirect exciton in homobilayers are systematically investigated. The homobilayers with slightly twist-angle can induce a deep moiré potential (>50 meV) in the energy landscape of indirect excitons, resulting in a strongly localized moiré excitons insulating the transport dynamics from phonons and disorder. These findings provide insights into the exciton dynamics and many-body physics in moiré superlattices modulated energy landscape, with implications for designing excitonic devices operating at room temperature.

van der Waals 2D transition metal dichalcogenide/organic hybridized heterostructures: recent breakthroughs and emerging prospects of the device

The near-atomic thickness and organic molecular systems, including organic semiconductors and polymer-enabled hybrid heterostructures, of two-dimensional transition metal dichalcogenides (2D-TMDs) can modulate their optoelectronic and transport properties outstandingly. In this review, the current understanding and mechanism of the most recent and significant breakthrough of novel interlayer exciton emission and its modulation by harnessing the band energy alignment between TMDs and organic semiconductors in a TMD/organic (TMDO) hybrid heterostructure are demonstrated. The review encompasses up-to-date device demonstrations, including field-effect transistors, detectors, phototransistors, and photo-switchable superlattices. An exploration of distinct traits in 2D-TMDs and organic semiconductors delves into the applications of TMDO hybrid heterostructures. This review provides insights into the synthesis of 2D-TMDs and organic layers, covering fabrication techniques and challenges. Band bending and charge transfer via band energy alignment are explored from both structural and molecular orbital perspectives. The progress in emission modulation, including charge transfer, energy transfer, doping, defect healing, and phase engineering, is presented. The recent advancements in 2D-TMDO-based optoelectronic synaptic devices, including various 2D-TMDs and organic materials for neuromorphic applications are discussed. The section assesses their compatibility for synaptic devices, revisits the operating principles, and highlights the recent device demonstrations. Existing challenges and potential solutions are discussed. Finally, the review concludes by outlining the current challenges that span from synthesis intricacies to device applications, and by offering an outlook on the evolving field of emerging TMDO heterostructures.

Recent progress of exciton transport in two-dimensional semiconductors

Spatial manipulation of excitonic quasiparticles, such as neutral excitons, charged excitons, and interlayer excitons, in two-dimensional semiconductors offers unique capabilities for a broad range of optoelectronic applications, encompassing photovoltaics, exciton-integrated circuits, and quantum light-emitting systems. Nonetheless, their practical implementation is significantly restricted by the absence of electrical controllability for neutral excitons, short lifetime of charged excitons, and low exciton funneling efficiency at room temperature, which remain a challenge in exciton transport. In this comprehensive review, we present the latest advancements in controlling exciton currents by harnessing the advanced techniques and the unique properties of various excitonic quasiparticles. We primarily focus on four distinct control parameters inducing the exciton current: electric fields, strain gradients, surface plasmon polaritons, and photonic cavities. For each approach, the underlying principles are introduced in conjunction with its progression through recent studies, gradually expanding their accessibility, efficiency, and functionality. Finally, we outline the prevailing challenges to fully harness the potential of excitonic quasiparticles and implement practical exciton-based optoelectronic devices.

Enhanced Exciton Drift Transport through Suppressed Diffusion in One-Dimensional Guides

Drift-diffusion dynamics is investigated in a one-dimensional (1D) exciton guide at room temperature. Spatial engineering of the exciton energy in a WSe2 monolayer is achieved using local strain to confine and direct exciton transport. An unexpected and massive deviation from the Einstein relation is observed and correlated to exciton capture by defects. We find that the capture reduces exciton temperature and diffusion so much that drift transport visibility improves to 38% as excitons traverse asymmetrically over regions with occupied defect states. Based on measurements over multiple potential gradients, we estimate the exciton mobility to be 169 ± 39 cm2/(eV s) at room temperature. Experiments at elevated exciton densities reveal that the exciton drift velocity monotonically increases with exciton density, unlike exciton mobility, due to contributions from nonequilibrium many-body effects.

Polymer-Waveguide-Integrated 2D Semiconductor Heterostructures for Optical Communications

The demand for high-speed and low-loss interconnects in modern computer architectures is difficult to satisfy by using traditional Si-based electronics. Although optical interconnects offer a promising solution owing to their high bandwidth, low energy dissipation, and high-speed processing, integrating elements such as a light source, detector, and modulator, comprising different materials with optical waveguides, presents many challenges in an integrated platform. Two-dimensional (2D) van der Waals (vdW) semiconductors have attracted considerable attention in vertically stackable optoelectronics and advanced flexible photonics. In this study, optoelectronic components for exciton-based photonic circuits are demonstrated by integrating lithographically patterned poly(methyl methacrylate) (PMMA) waveguides on 2D vdW devices. The excitonic signals generated from the 2D materials by using laser excitation were transmitted through patterned PMMA waveguides. By introducing an external electric field and combining vdW heterostructures, an excitonic switch, phototransistor, and guided-light photovoltaic device on SiO2/Si substrates were demonstrated.

Room-temperature high-speed electrical modulation of excitonic distribution in a monolayer semiconductor

Excitons in monolayer semiconductors, benefitting from their large binding energies, hold great potential towards excitonic circuits bridging nano-electronics and photonics. However, achieving room-temperature ultrafast on-chip electrical modulation of excitonic distribution and flow in monolayer semiconductors is nontrivial. Here, utilizing lateral bias, we report high-speed electrical modulation of the excitonic distribution in a monolayer semiconductor junction at room temperature. The alternating charge trapping/detrapping at the two monolayer/electrode interfaces induces a non-uniform carrier distribution, leading to controlled in-plane spatial variations of excitonic populations, and mimicking a bias-driven excitonic flow. This modulation increases with the bias amplitude and eventually saturates, relating to the energetic distribution of trap density of states. The switching time of the modulation is down to 5 ns, enabling high-speed excitonic devices. Our findings reveal the trap-assisted exciton engineering in monolayer semiconductors and offer great opportunities for future two-dimensional excitonic devices and circuits.

Kapitza-resistance-like exciton dynamics in atomically flat MoSe2-WSe2 lateral heterojunction

Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile excitons are highly attractive in this regard. However, generating an efficient and controlled exciton transport over long distances is a very challenging task. Here we demonstrate that an atomically sharp TMD-ML lateral heterostructure (MoSe2-WSe2) transforms the isotropic exciton diffusion into a unidirectional excitonic flow through the junction. Using tip-enhanced photoluminescence spectroscopy (TEPL) and a modified exciton transfer model, we show a discontinuity of the exciton density distribution on each side of the interface. We introduce the concept of exciton Kapitza resistance, by analogy with the interfacial thermal resistance referred to as Kapitza resistance. By comparing different heterostructures with or without top hexagonal boron nitride (hBN) layer, we deduce that the transport properties can be controlled, over distances far greater than the junction width, by the exciton density through near-field engineering and/or laser power density. This work provides a new approach for controlling the neutral exciton flow, which is key toward the conception of excitonic devices.

Engineering Exciton Dynamics with Synthetic DNA Scaffolds

Excitons are the molecular-scale currency of electronic energy. Control over excitons enables energy to be directed and harnessed for light harvesting, electronics, and sensing. Excitonic circuits achieve such control by arranging electronically active molecules to prescribe desired spatiotemporal dynamics. Photosynthetic solar energy conversion is a canonical example of the power of excitonic circuits, where chromophores are positioned in a protein scaffold to perform efficient light capture, energy transport, and charge separation. Synthetic systems that aim to emulate this functionality include self-assembled aggregates, molecular crystals, and chromophore-modified proteins. While the potential of this approach is clear, these systems lack the structural precision to control excitons or even test the limits of their power. In recent years, DNA origami has emerged as a designer material that exploits biological building blocks to construct nanoscale architectures. The structural precision afforded by DNA origami has enabled the pursuit of naturally inspired organizational principles in a highly precise and scalable manner. In this Account, we describe recent developments in DNA-based platforms that spatially organize chromophores to construct tunable excitonic systems. The high fidelity of DNA base pairing enables the formation of programmable nanoscale architectures, and sequence-specific placement allows for the precise positioning of chromophores within the DNA structure. The integration of a wide range of chromophores across the visible spectrum introduces spectral tunability. These excitonic DNA-chromophore assemblies not only serve as model systems for light harvesting, solar conversion, and sensing but also lay the groundwork for the integration of coupled chromophores into larger-scale nucleic acid architectures.We have used this approach to generate DNA-chromophore assemblies of strongly coupled delocalized excited states through both sequence-specific self-assembly and the covalent attachment of chromophores. These strategies have been leveraged to independently control excitonic coupling and system-bath interaction, which together control energy transfer. We then extended this framework to identify how scaffold configurations can steer the formation of symmetry-breaking charge transfer states, paving the way toward the design of dual light-harvesting and charge separation DNA machinery. In an orthogonal application, we used the programmability of DNA chromophore assemblies to change the optical emission properties of strongly coupled dimers, generating a series of fluorophore-modified constructs with separable emission properties for fluorescence assays. Upcoming advances in the chemical modification of nucleotides, design of large-scale DNA origami, and predictive computational methods will aid in constructing excitonic assemblies for optical and computing applications. Collectively, the development of DNA-chromophore assemblies as a platform for excitonic circuitry offers a pathway to identifying and applying design principles for light harvesting and molecular electronics.

Electric-Field-Driven Trion Drift and Funneling in MoSe2 Monolayer

Excitons, electron-hole pairs in semiconductors, can be utilized as information carriers with a spin or valley degree of freedom. However, manipulation of excitons' motion is challenging because of their charge-neutral characteristic and short recombination lifetimes. Here we demonstrate electric-field-driven drift and funneling of charged excitons (i.e., trions) toward the center of a MoSe2 monolayer. Using a simple bottom-gate device, we control the electric fields in the vicinity of the suspended monolayer, which increases the trion density and pulls down the layer. We observe that locally excited trions are subjected to electric force and, consequently, drift toward the center of the stretched layer. The exerting electric force on the trion is estimated to be 102-104 times stronger than the strain-induced force in the stretched monolayer, leading to the successful observation of trion drift under continuous-wave excitation. Our findings provide a new route for manipulating trions and achieving new types of optoelectronic devices.

Bosonic Delocalization of Dipolar Moiré Excitons

In superlattices of twisted semiconductor monolayers, tunable moiré potentials emerge, trapping excitons into periodic arrays. In particular, spatially separated interlayer excitons are subject to a deep potential landscape and they exhibit a permanent dipole providing a unique opportunity to study interacting bosonic lattices. Recent experiments have demonstrated density-dependent transport properties of moiré excitons, which could play a key role for technological applications. However, the intriguing interplay between exciton-exciton interactions and moiré trapping has not been well understood yet. In this work, we develop a microscopic theory of interacting excitons in external potentials allowing us to tackle this highly challenging problem. We find that interactions between moiré excitons lead to a delocalization at intermediate densities, and we show how this transition can be tuned via twist angle and temperature. The delocalization is accompanied by a modification of optical moiré resonances, which gradually merge into a single free exciton peak.

All-optical control of high-purity trions in nanoscale waveguide

The generation of high-purity localized trions, dynamic exciton-trion interconversion, and their spatial modulation in two-dimensional (2D) semiconductors are building blocks for the realization of trion-based optoelectronic devices. Here, we present a method for the all-optical control of the exciton-to-trion conversion process and its spatial distributions in a MoS₂ monolayer. We induce a nanoscale strain gradient in a 2D crystal transferred on a lateral metal-insulator-metal (MIM) waveguide and exploit propagating surface plasmon polaritons (SPPs) to localize hot electrons. These significantly increase the electrons and efficiently funnel excitons in the lateral MIM waveguide, facilitating complete exciton-to-trion conversion even at ambient conditions. Additionally, we modulate the SPP mode using adaptive wavefront shaping, enabling all-optical control of the exciton-to-trion conversion rate and trion distribution in a reversible manner. Our work provides a platform for harnessing excitonic quasiparticles efficiently in the form of trions at ambient conditions, enabling high-efficiency photoconversion.

Spontaneous Valley Polarization Caused by Crystalline Symmetry Breaking in Nonmagnetic LaOMX2 Monolayers

In order to achieve valley polarization, breaking the time-reversal symmetry in two-dimensional hexagonal lattices with inversion asymmetry is the heart of current valleytronic research, which, however, has caused studies to stagnate due to the inevitable drawbacks. In this work, we go beyond the conventional paradigm and demonstrate the novel valley physics caused by lowering the crystalline symmetry instead of breaking the time-reversal symmetry. In particular, we translate our concept into concrete nonmagnetic LaOMX₂ monolayers with a tetragonal lattice, confirming that a spontaneous structure distortion can cause the long-sought, considerably large valley polarization. In detail, the physics of valley-orbital coupling, valley-orbital-layer coupling, valley-contrasting linear dichroism, and interlayer exciton valleytronics are discussed.

Strain-Modulated Interlayer Charge and Energy Transfers in MoS2/WS2 Heterobilayer

Excitonic properties in 2D heterobilayers are closely governed by charge transfer (CT) and excitonic energy transfer (ET) at van der Waals interfaces. Various means have been employed to modulate the interlayer CT and ET, including electrical gating and modifying interlayer spacing, but with limited extent in their controllability. Here, we report a novel method to modulate these transfers in the MoS₂/WS₂ heterobilayer by applying compressive strain under hydrostatic pressure. Raman and photoluminescence measurements, combined with density functional theory calculations, show pressure-enhanced interlayer interaction of the heterobilayer. Heterobilayer-to-monolayer photoluminescence intensity ratio (η) of WS₂ decreases by five times up to ≈4 GPa, suggesting enhanced ET, whereas it increases by an order of magnitude at higher pressures and reaches almost unity. Theoretical calculations show that orbital switching and charge transfers in the heterobilayer's hybridized conduction band are responsible for the non-monotonic modulation of the transfers. Our findings provide a compelling approach toward effective mechanical control of CT and ET in 2D excitonic devices.

Layer-Number Engineered Momentum-Indirect Interlayer Excitons with Large Spectral Tunability

Interlayer excitons (IXs) in type II van der Waals (vdW) heterostructures are equipped with an oriented permanent dipole moment and long lifetime and thus would allow promising applications in excitonic and optoelectronic devices. However, based on the widely studied heterostructures of transition-metal dichalcogenides (TMDs), IX emission is greatly influenced by the lattice mismatch and geometric misalignment between the constituent layers, increasing the complexity of the device fabrication. Here, we report on the robust momentum-indirect IX emission in TMD/two-dimensional (2D) perovskite vdW heterostructures, which were fabricated without considering the orientation arrangement or momentum mismatch. The IXs show a large diffusion coefficient of ∼10 cm² s^-1, and importantly the IX emission energy can be widely tuned from 1.3 to 1.6 eV via changing the layer number of the 2D perovskite or the thickness of TMD flakes, shedding light on the applications of vdW interface engineering to broad-spectrum optoelectronics.

Engineering the Dynamics and Transport of Excitons, Trions, and Biexcitons in Monolayer WS2

The study of transport and diffusion dynamics of quasi-particles such as excitons, trions, and biexcitons in two-dimensional (2D) semiconductors has opened avenues for their application in high-speed excitonic and optoelectronic devices. However, long-range transport and fast diffusion of these quasi-particles have not been reported for 2D systems such as transition metal dichalcogenides (TMDCs). The reported diffusion coefficients from TMDCs are low, limiting their use in high-speed excitonic devices and other optoelectronic applications. Here, we report the highest exciton diffusion coefficient value in monolayer WS₂ achieved via engineering the radiative lifetime and diffusion lengths using static back-gate voltage and substrate engineering. Electrostatic doping is observed to modulate the radiative lifetime and in turn the diffusion coefficient of excitons by ∼three times at room temperature. By combining electrostatic doping and substrate engineering, we push the diffusion coefficient to an extremely high value of 86.5 cm²/s, which has not been reported before in TMDCs and is even higher than the values in some 1D systems. At low temperatures, we further report the control of dynamic and spatial diffusion of excitons, trions, and biexcitons from WS₂. The electrostatic control of dynamics and transport of these quasi-particles in monolayers establishes monolayer TMDCs as ideal candidates for high-speed excitonic circuits, optoelectronic, and photonic device applications.

Interlayer Exciton Diode and Transistor

Controlling the flow of charge neutral interlayer exciton (IX) quasiparticles can potentially lead to low loss excitonic circuits. Here, we report unidirectional transport of IXs along nanoscale electrostatically defined channels in an MoSe₂-WSe₂ heterostructure. These results are enabled by a lithographically defined triangular etch in a graphene gate to create a potential energy "slide". By performing spatially and temporally resolved photoluminescence measurements, we measure smoothly varying IX energy along the structure and high speed exciton flow with a drift velocity up to 2 × 10⁶ cm/s, an order of magnitude larger than previous experiments. Furthermore, exciton flow can be controlled by saturating exciton population in the channel using a second laser pulse, demonstrating an optically gated excitonic transistor. Our work paves the way toward low loss excitonic circuits, the study of bosonic transport in one-dimensional channels, and custom potential energy landscapes for excitons in van der Waals heterostructures.

Resonant Coherent Raman Scattering from WSe2

Low-dimensional transition-metal dichalcogenides (TMDs) continue to comprise a subject of intense research because of their unique optical and electronic properties that may be harnessed in modern devices. Intense photoluminescence (PL) from few-/monolayer TMDs rendered PL-based micro- and nanospectroscopic characterization ideal in the quest to understand the correlation between structure and function in these materials. Nonlinear optical methods are by comparison far less utilized for this purpose. In this work, we describe an approach based on electronically resonant four-wave-mixing that allows spatio-spectral characterization of excitons in monolayer WSe₂. Due to the coherent nature of the response that we exploit to trace exciton resonances, and recent demonstrations of electronic four-wave-mixing-based nanoimaging and nanospectroscopy, our present work is an important step toward characterizing TMDs on the nano-femto scale using light.

Interlayer Excitons in Transition Metal Dichalcogenide Semiconductors for 2D Optoelectronics

Optoelectronic materials that allow on-chip integrated light signal emitting, routing, modulation, and detection are crucial for the development of high-speed and high-throughput optical communication and computing technologies. Interlayer excitons in 2D van der Waals heterostructures, where electrons and holes are bounded by Coulomb interaction but spatially localized in different 2D layers, have recently attracted intense attention for their enticing properties and huge potential in device applications. Here, a general view of these 2D-confined hydrogen-like bosonic particles and the state-of-the-art developments with respect to the frontier concepts and prototypes is presented. Staggered type-II band alignment enables expansion of the interlayer direct bandgap from the intrinsic visible in monolayers up to the near- or even mid-infrared spectrum. Owing to large exciton binding energy, together with ultralong lifetime, room-temperature exciton devices and observation of quantum behaviors are demonstrated. With the rapid advances, it can be anticipated that future studies of interlayer excitons will not only allow the construction of all-exciton information processing circuits but will also continue to enrich the panoply of ideas on quantum phenomena.

Dark-Exciton Driven Energy Funneling into Dielectric Inhomogeneities in Two-Dimensional Semiconductors

The optoelectronic and transport properties of two-dimensional transition metal dichalcogenide semiconductors (2D TMDs) are highly susceptible to external perturbation, enabling precise tailoring of material function through postsynthetic modifications. Here, we show that nanoscale inhomogeneities known as nanobubbles can be used for both strain and, less invasively, dielectric tuning of exciton transport in bilayer tungsten diselenide (WSe₂). We use ultrasensitive spatiotemporally resolved optical scattering microscopy to directly image exciton transport, revealing that dielectric nanobubbles are surprisingly efficient at funneling and trapping excitons at room temperature, even though the energies of the bright excitons are negligibly affected. Our observations suggest that exciton funneling in dielectric inhomogeneities is driven by momentum-indirect (dark) excitons whose energies are more sensitive to dielectric perturbations than bright excitons. These results reveal a new pathway to control exciton transport in 2D semiconductors with exceptional spatial and energetic precision using dielectric engineering of dark state energetic landscapes.

Long-range transport of 2D excitons with acoustic waves

Excitons are elementary optical excitation in semiconductors. The ability to manipulate and transport these quasiparticles would enable excitonic circuits and devices for quantum photonic technologies. Recently, interlayer excitons in 2D semiconductors have emerged as a promising candidate for engineering excitonic devices due to their long lifetime, large exciton binding energy, and gate tunability. However, the charge-neutral nature of the excitons leads to weak response to the in-plane electric field and thus inhibits transport beyond the diffusion length. Here, we demonstrate the directional transport of interlayer excitons in bilayer WSe2 driven by the propagating potential traps induced by surface acoustic waves (SAW). We show that at 100 K, the SAW-driven excitonic transport is activated above a threshold acoustic power and reaches 20 μm, a distance at least ten times longer than the diffusion length and only limited by the device size. Temperature-dependent measurement reveals the transition from the diffusion-limited regime at low temperature to the acoustic field-driven regime at elevated temperature. Our work shows that acoustic waves are an effective, contact-free means to control exciton dynamics and transport, promising for realizing 2D materials-based excitonic devices such as exciton transistors, switches, and transducers up to room temperature.

Excitonic transport driven by repulsive dipolar interaction in a van der Waals heterostructure

Dipolar bosonic gases are currently the focus of intensive research due to their interesting many-body physics in the quantum regime. Their experimental embodiments range from Rydberg atoms to GaAs double quantum wells and van der Waals heterostructures built from transition metal dichalcogenides. Although quantum gases are very dilute, mutual interactions between particles could lead to exotic many-body phenomena such as Bose-Einstein condensation and high-temperature superfluidity. Here, we report the effect of repulsive dipolar interactions on the dynamics of interlayer excitons in the dilute regime. By using spatial and time-resolved photoluminescence imaging, we observe the dynamics of exciton transport, enabling a direct estimation of the exciton mobility. The presence of interactions significantly modifies the diffusive transport of excitons, effectively acting as a source of drift force and enhancing the diffusion coefficient by one order of magnitude. The repulsive dipolar interactions combined with the electrical control of interlayer excitons opens up appealing new perspectives for excitonic devices.

Strain Engineering of Low-Dimensional Materials for Emerging Quantum Phenomena and Functionalities

Recent discoveries of exotic physical phenomena, such as unconventional superconductivity in magic-angle twisted bilayer graphene, dissipationless Dirac fermions in topological insulators, and quantum spin liquids, have triggered tremendous interest in quantum materials. The macroscopic revelation of quantum mechanical effects in quantum materials is associated with strong electron-electron correlations in the lattice, particularly where materials have reduced dimensionality. Owing to the strong correlations and confined geometry, altering atomic spacing and crystal symmetry via strain has emerged as an effective and versatile pathway for perturbing the subtle equilibrium of quantum states. This review highlights recent advances in strain-tunable quantum phenomena and functionalities, with particular focus on low-dimensional quantum materials. Experimental strategies for strain engineering are first discussed in terms of heterogeneity and elastic reconfigurability of strain distribution. The nontrivial quantum properties of several strain-quantum coupled platforms, including 2D van der Waals materials and heterostructures, topological insulators, superconducting oxides, and metal halide perovskites, are next outlined, with current challenges and future opportunities in quantum straintronics followed. Overall, strain engineering of quantum phenomena and functionalities is a rich field for fundamental research of many-body interactions and holds substantial promise for next-generation electronics capable of ultrafast, dissipationless, and secure information processing and communications.

Observation of Diffusion and Drift of the Negative Trions in Monolayer WS2

Monolayer transition metal dichalcogenides (ML-TMDCs) are a versatile platform to explore the transport dynamics of the tightly bound excitonic states. The diffusion of neutral excitons in various ML-TMDCs has been observed. However, the transport of charged excitons (trions), which can be driven by an in-plane electric field and facilitate the formation of an excitonic current, has yet been well investigated. Here, we report the direct observation of diffusion and drift of the trions in ML-WS₂ through spatially and time-resolved photoluminescence. An effective diffusion coefficient of 0.47 cm²/s was extracted from the broadening of spatial profiles of the trion emission. When an in-plane electric field is applied, the spatial shift of the trion emission profiles indicated a drift velocity of 7400 cm/s. Both the diffusion caused broadening and the drift caused shift of the emission profiles saturate because of the Coulomb interactions between trions and the background charges.

Moiré superlattices and related moiré excitons in twisted van der Waals heterostructures

Recent advances in moiré superlattices and moiré excitons, such as quantum emission arrays, low-energy flat bands, and Mott insulators, have rapidly attracted attention in the fields of optoelectronics, materials, and energy research. The interlayer twist turns into a degree of freedom that alters the properties of the systems of materials, and the realization of moiré excitons also offers the feasibility of making artificial exciton crystals. Moreover, moiré excitons exhibit many exciting properties under the regulation of various external conditions, including spatial polarisation, alternating dipolar to alternating dipolar moments and gate-dependence to gate voltage dependence; all are pertinent to their applications in nano-photonics and quantum information. But the lag in theoretical development and the low-efficiency of processing technologies significantly limit the potential of moiré superlattice applications. In this review, we systematically summarise and discuss the recent progress in moiré superlattices and moiré excitons, and analyze the current challenges, and put forward relevant recommendations. There is no doubt that further research will lead to breakthroughs in their application and promote reforms and innovations in traditional solid-state physics and materials science.

Enhanced exciton binding energy, Zeeman splitting and spin polarization in hybrid layered nanosheets comprised of (Cd, Mn)Se and nitrogen-doped graphene oxide: implication for semiconductor devices

The exciton properties of (Cd,Mn)Se-NrGO (nitrogen doped reduced graphene oxide) hybrid layered nanosheets have been studied in a magnetic field up to 10 T and compared to those of (Cd,Mn)Se nanosheets. The temperature dependent photoluminescence reveals the hybridization of inter-band exciton and intra-center Mn transition with enhancement of the binding energy of exciton-Mn hybridized state (80 meV with respect to 60 meV in (Cd,Mn)Se nanosheets) and increase of exciton-phonon coupling strength to 90 meV (with respect to 55 meV in (Cd,Mn)Se nanosheets). The circularly polarized magneto-photoluminescence at 2 K provides evidence for magnetic field induced exciton spin polarization and the realization of excitonic giant Zeeman splitting withg_effas high as 165.4 ± 10.3, much larger than in the case of (Cd,Mn)Se nanosheets (63.9 ± 6.6), promising for implementation in spin active semiconductor devices.

A roadmap for interlayer excitons

Interlayer excitons in van der Waals heterostructures have tunable electron-hole separation in both real space and momentum space, enabling unprecedented control over excitonic properties to be exploited in a wide array of future applications ranging from exciton condensation to valleytronic and optoelectronic devices.

Interlayer exciton formation, relaxation, and transport in TMD van der Waals heterostructures

Van der Waals (vdW) heterostructures based on transition metal dichalcogenides (TMDs) generally possess a type-II band alignment that facilitates the formation of interlayer excitons between constituent monolayers. Manipulation of the interlayer excitons in TMD vdW heterostructures holds great promise for the development of excitonic integrated circuits that serve as the counterpart of electronic integrated circuits, which allows the photons and excitons to transform into each other and thus bridges optical communication and signal processing at the integrated circuit. As a consequence, numerous studies have been carried out to obtain deep insight into the physical properties of interlayer excitons, including revealing their ultrafast formation, long population recombination lifetimes, and intriguing spin-valley dynamics. These outstanding properties ensure interlayer excitons with good transport characteristics, and may pave the way for their potential applications in efficient excitonic devices based on TMD vdW heterostructures. At present, a systematic and comprehensive overview of interlayer exciton formation, relaxation, transport, and potential applications is still lacking. In this review, we give a comprehensive description and discussion of these frontier topics for interlayer excitons in TMD vdW heterostructures to provide valuable guidance for researchers in this field.

Tip-Induced Nano-Engineering of Strain, Bandgap, and Exciton Funneling in 2D Semiconductors

The tunability of the bandgap, absorption and emission energies, photoluminescence (PL) quantum yield, exciton transport, and energy transfer in transition metal dichalcogenide (TMD) monolayers provides a new class of functions for a wide range of ultrathin photonic devices. Recent strain-engineering approaches have enabled to tune some of these properties, yet dynamic control at the nanoscale with real-time and -space characterizations remains a challenge. Here, a dynamic nano-mechanical strain-engineering of naturally-formed wrinkles in a WSe₂ monolayer, with real-time investigation of nano-spectroscopic properties is demonstrated using hyperspectral adaptive tip-enhanced PL (a-TEPL) spectroscopy. First, nanoscale wrinkles are characterized through hyperspectral a-TEPL nano-imaging with <15 nm spatial resolution, which reveals the modified nano-excitonic properties by the induced tensile strain at the wrinkle apex, for example, an increase in the quantum yield due to the exciton funneling, decrease in PL energy up to ≈10 meV, and a symmetry change in the TEPL spectra caused by the reconfigured electronic bandstructure. Then the local strain is dynamically engineered by pressing and releasing the wrinkle apex through an atomic force tip control. This nano-mechanical strain-engineering allows to tune the exciton dynamics and emission properties at the nanoscale in a reversible fashion. In addition, a systematic switching and modulation platform of the wrinkle emission is demonstrated, which provides a new strategy for robust, tunable, and ultracompact nano-optical sources in atomically thin semiconductors.

Room-Temperature Exciton-Based Optoelectronic Switch

Excitons, bound pairs of electrons and holes, could act as an intermediary between electronic signal processing and optical transmission, thus speeding up the interconnection of photoelectric communication. However, up to date, exciton-based logic devices such as switches that work at room temperature are still lacking. This work presents a prototype of a room-temperature optoelectronic switch based on excitons in WSe₂ monolayer. The emission intensity of WSe₂ stacked on Au and SiO₂ substrates exhibits completely opposite behaviors upon applying gate voltages. Such observation can be ascribed to different doping behaviors of WSe₂ caused by charge-transfer and chemical-doping effect at WSe₂ /Au and WSe₂ /SiO₂ interfaces, respectively, together with the charge-drift effect. These interesting features can be utilized for optoelectronic switching, confirmed by the cyclic PL switching test for a long time exceeding 4000 s. This study offers a universal and reliable approach for the fabrication of exciton-based optoelectronic switches, which would be essential in integrated nanophotonics.

Switchable, Tunable, and Directable Exciton Funneling in Periodically Wrinkled WS2

The extreme elastic strain of monolayer transition metal dichalcogenides provides an ideal platform to achieve efficient exciton funneling via local strain modulation; however, studies conducted thus far have focused on the use of substrates with fixed strain profiles. We prepared 1L-WS₂ on a flexible substrate such that the formation of topographic wrinkles could be switched on or off, and the depth or the direction of the wrinkle could be modified by external strain, thereby providing full control of the periodic undulation of the band gap profile of 1L-WS₂ in the range 0-57 meV. Nanoscale photoluminescence (PL) imaging unambiguously evinced that the photoexcited excitons of 1L-WS₂ were accumulated at the top regions of the wrinkles with less band gap than the valley region. Our results of broad tunability of the two-dimensional (2D) exciton funneling suggest a promising route to control exciton drift for enhanced optoelectronic performances and future 2D exciton devices.

Neutral Exciton Diffusion in Monolayer MoS2

Monolayer transition metal dichalcogenides (TMDCs) are promising materials for next generation optoelectronic devices. The exciton diffusion length is a critical parameter that reflects the quality of exciton transport in monolayer TMDCs and limits the performance of many excitonic devices. Although diffusion lengths of a few hundred nanometers have been reported in the literature for as-exfoliated monolayers, these measurements are convoluted by neutral and charged excitons (trions) that coexist at room temperature due to natural background doping. Untangling the diffusion of neutral excitons and trions is paramount to understand the fundamental limits and potential of new optoelectronic device architectures made possible using TMDCs. In this work, we measure the diffusion lengths of neutral excitons and trions in monolayer MoS₂ by tuning the background carrier concentration using a gate voltage and utilizing both steady state and transient spectroscopy. We observe diffusion lengths of 1.5 μm and 300 nm for neutral excitons and trions, respectively, at an optical power density of 0.6 W cm^-2_.

Simultaneous Photonic and Excitonic Coupling in Spherical Quantum Dot Supercrystals

Semiconductor nanocrystals, or quantum dots (QDs), simultaneously benefit from inexpensive low-temperature solution processing and exciting photophysics, making them the ideal candidates for next-generation solar cells and photodetectors. While the working principles of these devices rely on light absorption, QDs intrinsically belong to the Rayleigh regime and display optical behavior limited to electric dipole resonances, resulting in low absorption efficiencies. Increasing the absorption efficiency of QDs, together with their electronic and excitonic coupling to enhance charge carrier mobility, is therefore of critical importance to enable practical applications. Here, we demonstrate a general and scalable approach to increase both light absorption and excitonic coupling of QDs by fabricating hierarchical metamaterials. We assemble QDs into crystalline supraparticles using an emulsion template and demonstrate that these colloidal supercrystals (SCs) exhibit extended resonant optical behavior resulting in an enhancement in absorption efficiency in the visible range of more than 2 orders of magnitude with respect to the case of dispersed QDs. This successful light trapping strategy is complemented by the enhanced excitonic coupling observed in ligand-exchanged SCs, experimentally demonstrated through ultrafast transient absorption spectroscopy and leading to the formation of a free biexciton system on sub-picosecond time scales. These results introduce a colloidal metamaterial designed by self-assembly from the bottom up, simultaneously featuring a combination of nanoscale and mesoscale properties leading to simultaneous photonic and excitonic coupling, therefore presenting the nanocrystal analogue of supramolecular structures.

Electrically controllable router of interlayer excitons

Optoelectronic devices that allow rerouting, modulation, and detection of the optical signals would be extremely beneficial for telecommunication technology. One of the most promising platforms for these devices is excitonic devices, as they offer very efficient coupling to light. Of especial importance are those based on indirect excitons because of their long lifetime. Here, we demonstrate excitonic transistor and router based on bilayer WSe₂ Because of their strong dipole moment, excitons in bilayer WSe₂ can be controlled by transverse electric field. At the same time, unlike indirect excitons in artificially stacked heterostructures based on transition metal dichalcogenides, naturally stacked bilayers are much simpler in fabrication.

Electrically tunable topological transport of moiré polaritons

Moiré interlayer exciton in transition metal dichalcogenide heterobilayer features a permanent electric dipole that enables the electrostatic control of its flow, and optical dipole that is spatially varying in the moiré landscape. We show the hybridization of moiré interlayer exciton with photons in a planar 2D cavity leads to two types of moiré polaritons that exhibit distinct forms of topological transport phenomena including the spin/valley Hall and polarization Hall effects, which feature remarkable electrical tunability through the control of exciton-cavity detuning by the interlayer bias.

Dynamic Exciton Funneling by Local Strain Control in a Monolayer Semiconductor

The ability to control excitons in semiconductors underlies numerous proposed applications, from excitonic circuits to energy transport. Two dimensional (2D) semiconductors are particularly promising for room-temperature applications due to their large exciton binding energy and enormous stretchability. Although the strain-induced static exciton flux has been observed in predetermined structures, dynamic control of exciton flux represents an outstanding challenge. Here, we introduce a method to tune the bandgap of suspended 2D semiconductors by applying a local strain gradient with a nanoscale tip. This strain allows us to locally and reversibly shift the exciton energy and to steer the exciton flux over micrometer-scale distances. We anticipate that our result not only marks an important experimental tool but will also open a broad range of new applications from information processing to energy conversion.

Supertransport of excitons in atomically thin organic semiconductors at the 2D quantum limit

Long-range and fast transport of coherent excitons is important for the development of high-speed excitonic circuits and quantum computing applications. However, most of these coherent excitons have only been observed in some low-dimensional semiconductors when coupled with cavities, as there are large inhomogeneous broadening and dephasing effects on the transport of excitons in their native states in materials. Here, by confining coherent excitons at the 2D quantum limit, we first observed molecular aggregation-enabled 'supertransport' of excitons in atomically thin two-dimensional (2D) organic semiconductors between coherent states, with a measured high effective exciton diffusion coefficient of ~346.9 cm2/s at room temperature. This value is one to several orders of magnitude higher than the values reported for other organic molecular aggregates and low-dimensional inorganic materials. Without coupling to any optical cavities, the monolayer pentacene sample, a very clean 2D quantum system (~1.2 nm thick) with high crystallinity (J-type aggregation) and minimal interfacial states, showed superradiant emission from Frenkel excitons, which was experimentally confirmed by the temperature-dependent photoluminescence (PL) emission, highly enhanced radiative decay rate, significantly narrowed PL peak width and strongly directional in-plane emission. The coherence in monolayer pentacene samples was observed to be delocalised over ~135 molecules, which is significantly larger than the values (a few molecules) observed for other organic thin films. In addition, the supertransport of excitons in monolayer pentacene samples showed highly anisotropic behaviour. Our results pave the way for the development of future high-speed excitonic circuits, fast OLEDs, and other optoelectronic devices.

Remote Lightening and Ultrafast Transition: Intrinsic Modulation of Exciton Spatiotemporal Dynamics in Monolayer MoS2

Devices operating with excitons have promising prospects for overcoming the dilemma of response time and integration in current generation of electron- or/and photon-based elements and devices. Although the intrinsic properties including edges, grain boundaries, and defects of atomically thin semiconductors have been demonstrated as a powerful tool to adjust the bandgap and exciton energy, investigating the intrinsic modulation of spatiotemporal dynamics still remains challenging on account of the short exciton diffusion length. Here, we achieve the attractive remote lightening phenomenon, in which the emission region could be far away (up to 14.6 μm) from the excitation center, by utilizing a femtosecond laser with ultrahigh peak power as excitation source and the edge region with high photoluminescence efficiency as a bright emitter. Furthermore, the ultrafast transition between exciton and trion is demonstrated, which provides insight into the intrinsic modulation on populations of exciton and trion states. The complete cascaded physical scenario of exciton spatiotemporal dynamics is eventually established. This work can refresh our perspective on the spatial nonuniformities of CVD-grown atomically thin semiconductors and provide important implications for developing durable and stable excitonic devices in the future.

Twist-angle-dependent interlayer exciton diffusion in WS2-WSe2 heterobilayers

The nanoscale periodic potentials introduced by moiré patterns in semiconducting van der Waals heterostructures have emerged as a platform for designing exciton superlattices. However, our understanding of the motion of excitons in moiré potentials is still limited. Here we investigated interlayer exciton dynamics and transport in WS₂-WSe₂ heterobilayers in time, space and momentum domains using transient absorption microscopy combined with first-principles calculations. We found that the exciton motion is modulated by twist-angle-dependent moiré potentials around 100 meV and deviates from normal diffusion due to the interplay between the moiré potentials and strong exciton-exciton interactions. Our experimental results verified the theoretical prediction of energetically favourable K-Q interlayer excitons and showed exciton-population dynamics that are controlled by the twist-angle-dependent energy difference between the K-Q and K-K excitons. These results form a basis to investigate exciton and spin transport in van der Waals heterostructures, with implications for the design of quantum communication devices.

Indirect Excitons and Trions in MoSe2/WSe2 van der Waals Heterostructures

Indirect excitons (IX) in semiconductor heterostructures are bosons, which can cool below the temperature of quantum degeneracy and can be effectively controlled by voltage and light. IX quantum Bose gases and IX devices were explored in GaAs heterostructures where an IX range of existence is limited to low temperatures due to low IX binding energies. IXs in van der Waals transition-metal dichalcogenide (TMD) heterostructures are characterized by large binding energies giving the opportunity for exploring excitonic quantum gases and for creating excitonic devices at high temperatures. TMD heterostructures also offer a new platform for studying single-exciton phenomena and few-particle complexes. In this work, we present studies of IXs in MoSe₂/WSe₂ heterostructures and report on two IX luminescence lines whose energy splitting and temperature dependence identify them as neutral and charged IXs. The experimentally found binding energy of the indirect charged excitons, that is, indirect trions, is close to the calculated binding energy of 28 meV for negative indirect trions in TMD heterostructures [Deilmann, T.; Thygesen, K. S. Nano Lett. 2018, 18, 1460]. We also report on the realization of IXs with a luminescence line width reaching 4 meV at low temperatures. An enhancement of IX luminescence intensity and the narrow line width are observed in localized spots.

All-optical control of exciton flow in a colloidal quantum well complex

Excitonics, an alternative to romising for processing information since semiconductor electronics is rapidly approaching the end of Moore's law. Currently, the development of excitonic devices, where exciton flow is controlled, is mainly focused on electric-field modulation or exciton polaritons in high-Q cavities. Here, we show an all-optical strategy to manipulate the exciton flow in a binary colloidal quantum well complex through mediation of the Förster resonance energy transfer (FRET) by stimulated emission. In the spontaneous emission regime, FRET naturally occurs between a donor and an acceptor. In contrast, upon stronger excitation, the ultrafast consumption of excitons by stimulated emission effectively engineers the excitonic flow from the donors to the acceptors. Specifically, the acceptors' stimulated emission significantly accelerates the exciton flow, while the donors' stimulated emission almost stops this process. On this basis, a FRET-coupled rate equation model is derived to understand the controllable exciton flow using the density of the excited donors and the unexcited acceptors. The results will provide an effective all-optical route for realizing excitonic devices under room temperature operation.

Robust Room Temperature Valley Hall Effect of Interlayer Excitons

The Berry curvature in the band structure of transition metal dichalcogenides (TMDs) introduces a valley-dependent effective magnetic field, which induces the valley Hall effect (VHE). Similar to the ordinary Hall effect, the VHE spatially separates carriers or excitons, depending on their valley index, and accumulates them at opposite sample edges. The VHE can play a key role in valleytronic devices, but previous observations of the VHE have been limited to cryogenic temperatures. Here, we report a demonstration of the VHE of interlayer excitons in a MoS₂/WSe₂ heterostructure at room temperature. We monitored the in-plane propagation of interlayer excitons through photoluminescence mapping and observed their spatial separation into two opposite transverse directions that depended on the valley index of the excitons. Our theoretical simulations reproduced the salient features of these observations. Our demonstration of the robust interlayer exciton VHE at room temperature, enabled by their intrinsically long lifetimes, will open up realistic possibilities for the development of opto-valleytronic devices based on TMD heterostructures.

Valley-Layer Coupling: A New Design Principle for Valleytronics

The current valleytronics research is based on the paradigm of time-reversal-connected valleys in two-dimensional (2D) hexagonal materials, which forbids the fully electric generation of valley polarization by a gate field. Here, we go beyond the existing paradigm to explore 2D systems with a novel valley-layer coupling (VLC) mechanism, where the electronic states in the emergent valleys have a valley-contrasted layer polarization. The VLC enables a direct coupling between a valley and a gate electric field. We analyze the symmetry requirements for a system to host VLC, demonstrate our idea via first-principles calculations and model analysis of a concrete 2D material example, and show that an electric, continuous, wide-range, and switchable control of valley polarization can be achieved by VLC. Furthermore, we find that systems with VLC can exhibit other interesting physics, such as valley-contrasting linear dichroism and optical selection of the valley and the electric polarization of interlayer excitons. Our finding opens a new direction for valleytronics and 2D materials research.

Polarity Tunable Trionic Electroluminescence in Monolayer WSe2

Monolayer WSe₂ exhibits luminescence arising from various types of exciton complexes due to strong many-body effects. Here, we demonstrate selective electrical excitation of positive and negative trions in van der Waals metal-insulator-semiconductor (MIS) heterostructure consisting of few-layer graphene (FLG), hexagonal boron nitride (hBN), and monolayer WSe₂. Intentional unbalanced injection of electrons and holes is achieved via field-emission tunneling and electrostatic accumulation. The device exhibits planar electroluminescence from either positive trion X⁺ or negative trion X^- depending on the bias conditions. We show that hBN serves as a tunneling barrier material allowing selective injection of electron or holes into WSe₂ from FLG layer. Our observation offers prospects for hot carrier injection, trion manipulation, and on-chip excitonic devices based on two-dimensional semiconductors.

Enhanced exciton transport in an optical cavity field with spatially varying profile

We explicitly consider the spatial profile of the light field in the study of exciton transport through a one-dimensional molecular aggregate in the cavity. When the scale of the aggregate is comparable with the cavity wavelength, the resultant exciton-photon coupling strength varies with the position of each monomer. Such effect is explicitly included in a quantum master equation describing the dynamics of the excitonic, photonic, and vibrational modes. By investigating the steady-state exciton currents, we show that the strong and spatially varying exciton-photon coupling dominates the exciton transport and significantly enhances the transport efficiency. With suitable intermonomer distance, the delocalized polaronic mode generates more occupation on the acceptor monomer than the bridge monomers and thus makes it a more efficient channel for exciton transfer. The effects of localized vibrations are also investigated, and the vibration-assisted exciton transport is demonstrated with strong exciton-vibration coupling. Our results show that the vibrational modes are not as significant as the spatially varying exciton-photon couplings in affecting the exciton transport.