1
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Qu H, Zhang S, Cao J, Wu Z, Chai Y, Li W, Li LJ, Ren W, Wang X, Zeng H. Identifying atomically thin isolated-band channels for intrinsic steep-slope transistors by high-throughput study. Sci Bull (Beijing) 2024; 69:1427-1436. [PMID: 38531717 DOI: 10.1016/j.scib.2024.03.017] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/22/2023] [Revised: 01/22/2024] [Accepted: 03/04/2024] [Indexed: 03/28/2024]
Abstract
Developing low-power FETs holds significant importance in advancing logic circuits, especially as the feature size of MOSFETs approaches sub-10 nanometers. However, this has been restricted by the thermionic limitation of SS, which is limited to 60 mV per decade at room temperature. Herein, we proposed a strategy that utilizes 2D semiconductors with an isolated-band feature as channels to realize sub-thermionic SS in MOSFETs. Through high-throughput calculations, we established a guiding principle that combines the atomic structure and orbital interaction to identify their sub-thermionic transport potential. This guides us to screen 192 candidates from the 2D material database comprising 1608 systems. Additionally, the physical relationship between the sub-thermionic transport performances and electronic structures is further revealed, which enables us to predict 15 systems with promising device performances for low-power applications with supply voltage below 0.5 V. This work opens a new way for the low-power electronics based on 2D materials and would inspire extensive interests in the experimental exploration of intrinsic steep-slope MOSFETs.
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Affiliation(s)
- Hengze Qu
- MIIT Key Laboratory of Advanced Display Materials and Devices, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Shengli Zhang
- MIIT Key Laboratory of Advanced Display Materials and Devices, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Jiang Cao
- School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Zhenhua Wu
- Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong 999077, China
| | - Weisheng Li
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
| | - Lain-Jong Li
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong 999077, China
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Xinran Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China; School of Integrated Circuits, Nanjing University, Suzhou 215163, China; Suzhou Laboratory, Suzhou 215009, China
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Materials and Devices, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
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2
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Qiao L, Li M, Cui Y, Xu S, Reimers JR, Ren W. Giant Carrier Mobility in a Room-Temperature Ferromagnetic VSi 2N 4 Monolayer. NANO LETTERS 2024; 24:6403-6409. [PMID: 38767304 DOI: 10.1021/acs.nanolett.4c01416] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2024]
Abstract
Using density functional theory (DFT), we investigate that two possible phases of VSi2N4 (VSN) may be realized, one called the "H phase" corresponding to what is known from calculation and herein the other new "T phase" being stabilized by a biaxial tensile strain of 3%. Significantly, the H phase is predicted to display a giant carrier mobility of 1 × 106 cm2 V-1 s-1, which exceeds that for most 2D magnetic materials, with a Curie temperature (TC) exceeding room temperature and a band gap of 2.01 eV at the K point. Following the H-T phase transition, the direct band gap shifts to the Γ point and increases to 2.59 eV. The Monte Carlo (MC) simulations also indicate that TC of the T phase VSN can be effectively modulated by strain, reaching room temperature under a biaxial strain of -4%. These results show that VSN should be a promising functional material for future nanoelectronics.
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Affiliation(s)
- Lei Qiao
- Institute for Quantum Science and Technology, International Center of Quantum and Molecular Structures, Materials Genome Institute, Physics Department, Shanghai University, Shanghai 200444, People's Republic of China
| | - Musen Li
- Institute for Quantum Science and Technology, International Center of Quantum and Molecular Structures, Materials Genome Institute, Physics Department, Shanghai University, Shanghai 200444, People's Republic of China
- Department of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Yaning Cui
- Institute for Quantum Science and Technology, International Center of Quantum and Molecular Structures, Materials Genome Institute, Physics Department, Shanghai University, Shanghai 200444, People's Republic of China
| | - Shaowen Xu
- Institute for Quantum Science and Technology, International Center of Quantum and Molecular Structures, Materials Genome Institute, Physics Department, Shanghai University, Shanghai 200444, People's Republic of China
| | - Jeffrey R Reimers
- Institute for Quantum Science and Technology, International Center of Quantum and Molecular Structures, Materials Genome Institute, Physics Department, Shanghai University, Shanghai 200444, People's Republic of China
- Department of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Wei Ren
- Institute for Quantum Science and Technology, International Center of Quantum and Molecular Structures, Materials Genome Institute, Physics Department, Shanghai University, Shanghai 200444, People's Republic of China
- Zhejiang Laboratory, Hangzhou 311100, People's Republic of China
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3
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Gan S, Wei Q, He G, Li J, Chen X, Su G, Shen C, Wang N. Thermal Transport Properties of Two-Dimensional Janus MoXSiN 2 (X = S, Se, and Te). LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2024. [PMID: 38809168 DOI: 10.1021/acs.langmuir.4c01669] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2024]
Abstract
The design of Janus materials offers an effective means of regulating both their physical and chemical properties, leading to their application in various fields. However, the underlying mechanism governing the modulation of the thermal transport characteristics through the construction of Janus materials remains unclear. In this work, we introduce VI-group elements into the MoSi2N4 structure, yielding two-dimensional Janus MoXSiN2 (X = S, Se, and Te) and systematically investigate their thermal transport properties based on first-principles calculation methods. Our findings reveal that the lattice thermal conductivities (κl) of MoSSiN2, MoSeSiN2, and MoTeSiN2 are 47.2, 24.3, and 40.6 W/mK at 300 K, respectively, significantly lower than that of MoSi2N4 (224 W/mK). Such low κl values mainly come from the introduction of X atoms, which enhances phonon scattering and reduces phonon vibration frequencies. In addition, MoTeSiN2 exhibits a higher κl compared to MoSeSiN2, contrary to the trend observed in most materials containing VI-group elements, where κl decreases gradually from S to Te. This anomalous behavior can be attributed to the competitive result between its lower phonon vibrational frequency and weaker phonon anharmonicity of MoTeSiN2. This work elucidates the inherent mechanism governing the modulation of thermal transport properties in Janus materials, thereby enhancing the potential application of Janus MoXSiN2 in engineering thermal management.
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Affiliation(s)
- Siyu Gan
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
| | - Qinqin Wei
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
| | - Guiling He
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
| | - Jialu Li
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
| | - Xihao Chen
- School of Materials Science and Engineering, Chongqing University of Arts and Sciences, Chongqing 402160, China
| | - Gehong Su
- College of Science, Sichuan Agricultural University, Ya'an 625014, China
| | - Chen Shen
- Institute of Materials Science, Technical University of Darmstadt, Darmstadt 64287, Germany
| | - Ning Wang
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
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4
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Yang J, Liu X, Deng X, Tang Z, Cao L. Surface-engineered Mo 2B: a promising electrode material for constructing Ohmic contacts with blue phosphorene for electronic device applications. Phys Chem Chem Phys 2024; 26:15666-15671. [PMID: 38764438 DOI: 10.1039/d4cp00393d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/21/2024]
Abstract
The Schottky barrier between a metal and a semiconductor plays an important role in determining the transport efficiency of carriers and improving the performance of devices. In this work, we systematically studied the structure and electronic properties of heterostructures of blue phosphorene (BP) in contact with Mo2B based on density functional theory. The semiconductor properties of BP are destroyed owing to strong interaction with bare Mo2B. The effect of modifying Mo2B with O and OH on the contact properties was investigated. A p-type Schottky contact can be obtained in BP/Mo2BO2. The height of the Schottky barrier can be modulated by interlayer distance to realize a transition from a p-type Schottky contact to a p-type Ohmic contact in BP/Mo2BO2. The BP/Mo2B(OH)2 forms robust Ohmic contacts, which are insensitive to interlayer distance and external electric fields due to the Fermi level pinning effect. Our work provides important clues for contact engineering and improvement of device performance based on BP.
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Affiliation(s)
- Jingying Yang
- College of Physics and Electronic Engineering, Hengyang Normal University, Hengyang 421002, China
| | - Xiang Liu
- College of Physics and Electronic Engineering, Hengyang Normal University, Hengyang 421002, China
| | - Xiaohui Deng
- The Key Laboratory of Micro-nano Energy Materials and Application Technologies, University of Hunan Province, College of Physics and Electronic Engineering, Hengyang Normal University, Hengyang 421002, China.
| | - Zhenkun Tang
- The Key Laboratory of Micro-nano Energy Materials and Application Technologies, University of Hunan Province, College of Physics and Electronic Engineering, Hengyang Normal University, Hengyang 421002, China.
| | - Liemao Cao
- The Key Laboratory of Micro-nano Energy Materials and Application Technologies, University of Hunan Province, College of Physics and Electronic Engineering, Hengyang Normal University, Hengyang 421002, China.
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5
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Xing J, Wu C, Li S, Chen Y, Zhang L, Xie Y, Yuan J, Zhang L. Spin Hall effect modulated by an electric field in asymmetric two-dimensional MoSiAs 2Se. Phys Chem Chem Phys 2024; 26:15539-15546. [PMID: 38756083 DOI: 10.1039/d4cp00594e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/18/2024]
Abstract
Spin current generation from charge current in nonmagnetic materials promises an energy-efficient scheme for manipulating magnetization in spintronic devices. In some asymmetric two-dimensional (2D) materials, the Rashba and valley effects coexist owing to strong spin-orbit coupling (SOC), which induces the spin Hall effect due to spin-momentum locking of both effects. Herein, we propose a new Janus structure MoSiAs2Se with both valley physics and the Rashba effect and reveal an effective way to modulate the properties of this structure. The results demonstrated that applying an external electric field is an effective means to modulating the electronic properties of MoSiAs2Se, leading to both type I-II phase transitions and semiconductor-metal phase transitions. Furthermore, the coexistence of the Rashba and valley effects in monolayer MoSiAs2Se contributes to the spin Hall effect (SHE). The magnitude and direction of spin Hall conductivity can also be manipulated with an out-of-plane electric field. Our results enrich the physics and materials of the Rashba and valley systems, opening new opportunities for the applications of 2D Janus materials in spintronic devices.
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Affiliation(s)
- Jinhui Xing
- School of Physics and Electronic Engineering, Jiangsu University, Zhenjiang 212013, China.
- Jiangsu Engineering Research Center on Quantum Perception and Intelligent Detection of Agricultural Information, Zhenjiang 212013, China
| | - Chao Wu
- School of Physics and Electronic Engineering, Jiangsu University, Zhenjiang 212013, China.
- Jiangsu Engineering Research Center on Quantum Perception and Intelligent Detection of Agricultural Information, Zhenjiang 212013, China
| | - Shiqi Li
- School of Physics and Electronic Engineering, Jiangsu University, Zhenjiang 212013, China.
- Jiangsu Engineering Research Center on Quantum Perception and Intelligent Detection of Agricultural Information, Zhenjiang 212013, China
| | - Yuanping Chen
- School of Physics and Electronic Engineering, Jiangsu University, Zhenjiang 212013, China.
- Jiangsu Engineering Research Center on Quantum Perception and Intelligent Detection of Agricultural Information, Zhenjiang 212013, China
| | - Lizhi Zhang
- National Center for Nanoscience and Technology of China, Beijing 100190, China
| | - Yuee Xie
- School of Physics and Electronic Engineering, Jiangsu University, Zhenjiang 212013, China.
- Jiangsu Engineering Research Center on Quantum Perception and Intelligent Detection of Agricultural Information, Zhenjiang 212013, China
| | - Jiaren Yuan
- School of Physics and Materials Science, Nanchang University, Nanchang 330031, China.
| | - Lichuan Zhang
- School of Physics and Electronic Engineering, Jiangsu University, Zhenjiang 212013, China.
- Jiangsu Engineering Research Center on Quantum Perception and Intelligent Detection of Agricultural Information, Zhenjiang 212013, China
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6
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Nguyen ST, Pham KD. Theoretical prediction of the electronic structure, optical properties and contact characteristics of a type-I MoS 2/MoGe 2N 4 heterostructure towards optoelectronic devices. Dalton Trans 2024; 53:9072-9080. [PMID: 38738357 DOI: 10.1039/d4dt00829d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/14/2024]
Abstract
Recently, the combination of two different two-dimensional (2D) semiconductors to generate van der Waals (vdW) heterostructures has emerged as an effective strategy to tailor their physical properties, paving the way for the development of next-generation devices with improved performance and functionality. In this work, we designed an MoS2/MoGe2N4 heterostructure and explored its electronic structures, optical properties and contact characteristics using first-principles calculations. The MoS2/MoGe2N4 heterostructure is predicted to be energetically, thermally and dynamically stable, indicating its feasibility for experimental synthesis in the future. The MoS2/MoGe2N4 heterostructure forms type-I band alignment, suggesting that it can be considered as a promising material for optoelectronic devices, such as light-emitting diodes, and in laser applications. Furthermore, the type-I MoS2/MoGe2N4 heterostructure has enhanced optical absorption in both the visible and ultraviolet regions. More interestingly, the electronic properties and contact characteristics of the MoS2/MoGe2N4 heterostructure can be tailored by applying in-plane biaxial strain. Under the application of compressive and tensile strains, transformations between type-I and type-II band alignments and between semiconductor and metal can be achieved in the MoS2/MoGe2N4 heterostructure. Our findings could provide useful guidance for experimental synthesis of materials based on the MoS2/MoGe2N4 heterostructure for electronic and optoelectronic applications.
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Affiliation(s)
- S T Nguyen
- Faculty of Electrical Engineering, Hanoi University of Industry, Hanoi 100000, Vietnam.
| | - K D Pham
- Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam.
- School of Engineering & Technology, Duy Tan University, Da Nang 550000, Vietnam
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7
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Zhang W, Guo J, Lv X, Zhang F. Combined Machine Learning and High-Throughput Calculations Predict Heyd-Scuseria-Ernzerhof Band Gap of 2D Materials and Potential MoSi 2N 4 Heterostructures. J Phys Chem Lett 2024; 15:5413-5419. [PMID: 38743311 DOI: 10.1021/acs.jpclett.4c01013] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/16/2024]
Abstract
We present a novel target-driven methodology devised to predict the Heyd-Scuseria-Ernzerhof (HSE) band gap of two-dimensional (2D) materials leveraging the comprehensive C2DB database. This innovative approach integrates machine learning and density functional theory (DFT) calculations to predict the HSE band gap, conduction band minimum (CBM), and valence band maximum (VBM) of 2176 types of 2D materials. Subsequently, we collected a comprehensive data set comprising 3539 types of 2D materials, each characterized by its HSE band gaps, CBM, and VBM. Considering the lattice disparities between MoSi2N4 (MSN) and 2D materials, our analysis predicted 766 potential MSN/2D heterostructures. These heterostructures are further categorized into four distinct types based on the relative positions of their CBM and VBM: Type I encompasses 230 variants, Type II comprises 244 configurations, Type III consists of 284 permutations, and 0 band gap comprises 8 types.
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Affiliation(s)
- Weibin Zhang
- College of Physics and Electronics Information, Yunnan Key Laboratory of Optoelectronic Information Technology, Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials-Ministry of Education, Yunnan Normal University, Kunming 650500, P.R. China
| | - Jie Guo
- College of Physics and Electronics Information, Yunnan Key Laboratory of Optoelectronic Information Technology, Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials-Ministry of Education, Yunnan Normal University, Kunming 650500, P.R. China
| | - Xiankui Lv
- College of Physics and Electronics Information, Yunnan Key Laboratory of Optoelectronic Information Technology, Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials-Ministry of Education, Yunnan Normal University, Kunming 650500, P.R. China
| | - Fuchun Zhang
- College of Physics and Electronic Information, Yan'an University, Yan'an 716000, P. R. China
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8
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Jia K, Dong XJ, Li SS, Ji WX, Zhang CW. Tunable abundant valley Hall effect and chiral spin-valley locking in Janus monolayer VCGeN 4. NANOSCALE 2024; 16:8639-8649. [PMID: 38618905 DOI: 10.1039/d3nr05643k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/16/2024]
Abstract
It is both conceptually and practically fascinating to explore fundamental research studies and practical applications of two-dimensional systems with the tunable abundant valley Hall effect. In this work, based on first-principles calculations, the tunable abundant valley Hall effect is proved to appear in Janus monolayer VCGeN4. When the magnetization is along the out-of-plane direction, VCGeN4 is an intrinsic ferromagnetic semiconductor with a valley feature. The intriguing spontaneous valley polarization exists in VCGeN4 due to the common influence of broken inversion and time-reversal symmetries, which makes it easier to realize the anomalous valley Hall effect. Furthermore, we observe that the valley-non-equilibrium quantum anomalous Hall effect is driven by external strain, which is located between two half-valley-metal states. When reversing the magnetization, the spin flipping makes the position of the edge state to change from one valley to another valley, demonstrating an intriguing behavior known as chiral spin-valley locking. Although the easy magnetic axis orientation is along the in-plane direction, we can utilize an external magnetic field to transform the magnetic axis orientation. Moreover, it is found that the valley state, electronic and magnetic properties can be well regulated by the electric field. Our works explore the mechanism of the tunable abundant valley Hall effect by applying an external strain and electric field, which provides a perfect platform to investigate the spin, valley, and topology.
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Affiliation(s)
- Kang Jia
- School of Physics and Technology, Institute of Spintronics, University of Jinan, Jinan, Shandong, 250022, People's Republic of China.
- School of Physics and Physical Engineering, Qufu Normal University, Qufu, Shandong, 273100, People's Republic of China
| | - Xiao-Jing Dong
- School of Physics and Physical Engineering, Qufu Normal University, Qufu, Shandong, 273100, People's Republic of China
| | - Sheng-Shi Li
- School of Physics and Technology, Institute of Spintronics, University of Jinan, Jinan, Shandong, 250022, People's Republic of China.
| | - Wei-Xiao Ji
- School of Physics and Technology, Institute of Spintronics, University of Jinan, Jinan, Shandong, 250022, People's Republic of China.
| | - Chang-Wen Zhang
- School of Physics and Technology, Institute of Spintronics, University of Jinan, Jinan, Shandong, 250022, People's Republic of China.
- School of Physics and Physical Engineering, Qufu Normal University, Qufu, Shandong, 273100, People's Republic of China
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9
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Zhang J, Xia Y, Peng L, Zhang Y, Li B, Shu L, Cen Y, Zhuang J, Zhu H, Zhan P, Zhang H. Ultra-Confined Phonon Polaritons and Strongly Coupled Microcavity Exciton Polaritons in Monolayer MoSi 2N 4 and WSi 2N 4. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2307691. [PMID: 38454650 PMCID: PMC11095159 DOI: 10.1002/advs.202307691] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/13/2023] [Revised: 12/07/2023] [Indexed: 03/09/2024]
Abstract
The 2D semiconductors are an ideal platform for exploration of bosonic fluids composed of coupled photons and collective excitations of atoms or excitons, primarily due to large excitonic binding energies and strong light-matter interaction. Based on first-principles calculations, it is demonstrated that the phonon polaritons formed by two infrared-active phonon modes in monolayer MoSi2N4 and WSi2N4 possess ultra-high confinement factors of around ≈105 and 103, surpassing those of conventional polaritonic thin-film materials by two orders of magnitude. It is observed that the first bright exciton possesses a substantial binding energies of 750 and 740 meV in these two monolayers, with the radiative recombination lifetimes as long as 25 and 188 ns, and the Rabi splitting of the formed cavity-exciton polaritons reaching 373 and 321 meV, respectively. The effective masses of the cavity exciton polaritons are approximately 10-5me, providing the potential for high-temperature quantum condensation. The ultra-confined and ultra-low-loss phonon polaritons, as well as strongly-coupled cavity exciton polaritons with ultra-small polaritonic effective masses in these two monolayers, offering the flexible control of light at the nanoscale, probably leading to practical applications in nanophotonics, meta-optics, and quantum materials.
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Affiliation(s)
- Juan Zhang
- The State Key Laboratory of Photovoltaic Science and Technology and School of Information Science and Technology and Department of Optical Science and Engineering and Key Laboratory of Micro and Nano Photonic Structures (MOE)Fudan UniversityShanghai200433China
| | - Yujie Xia
- The State Key Laboratory of Photovoltaic Science and Technology and School of Information Science and Technology and Department of Optical Science and Engineering and Key Laboratory of Micro and Nano Photonic Structures (MOE)Fudan UniversityShanghai200433China
| | - Lei Peng
- The State Key Laboratory of Photovoltaic Science and Technology and School of Information Science and Technology and Department of Optical Science and Engineering and Key Laboratory of Micro and Nano Photonic Structures (MOE)Fudan UniversityShanghai200433China
| | - Yiming Zhang
- The State Key Laboratory of Photovoltaic Science and Technology and School of Information Science and Technology and Department of Optical Science and Engineering and Key Laboratory of Micro and Nano Photonic Structures (MOE)Fudan UniversityShanghai200433China
| | - Ben Li
- The State Key Laboratory of Photovoltaic Science and Technology and School of Information Science and Technology and Department of Optical Science and Engineering and Key Laboratory of Micro and Nano Photonic Structures (MOE)Fudan UniversityShanghai200433China
| | - Le Shu
- The State Key Laboratory of Photovoltaic Science and Technology and School of Information Science and Technology and Department of Optical Science and Engineering and Key Laboratory of Micro and Nano Photonic Structures (MOE)Fudan UniversityShanghai200433China
| | - Yan Cen
- Department of PhysicsFudan UniversityShanghai200433China
| | - Jun Zhuang
- The State Key Laboratory of Photovoltaic Science and Technology and School of Information Science and Technology and Department of Optical Science and Engineering and Key Laboratory of Micro and Nano Photonic Structures (MOE)Fudan UniversityShanghai200433China
| | - Heyuan Zhu
- The State Key Laboratory of Photovoltaic Science and Technology and School of Information Science and Technology and Department of Optical Science and Engineering and Key Laboratory of Micro and Nano Photonic Structures (MOE)Fudan UniversityShanghai200433China
| | - Peng Zhan
- National Laboratory of Solid State MicrostructuresCollaborative Innovation Center of Advanced Microstructures and School of PhysicsNanjing UniversityNanjing210093China
| | - Hao Zhang
- The State Key Laboratory of Photovoltaic Science and Technology and School of Information Science and Technology and Department of Optical Science and Engineering and Key Laboratory of Micro and Nano Photonic Structures (MOE)Fudan UniversityShanghai200433China
- Yiwu Research Institute of Fudan UniversityChengbei RoadYiwu CityZhejiang322000China
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10
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Ding YM, Huo Y, Fang G, Yan L, Wu Y, Zhou L. Two-dimensional half-metals MSi 2N 4 (M = Al, Ga, In, Tl) with intrinsic p-type ferromagnetism and ultrawide bandgaps. Phys Chem Chem Phys 2024; 26:13327-13334. [PMID: 38639877 DOI: 10.1039/d3cp05940e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/20/2024]
Abstract
Intrinsic half-metallic nanomaterials with 100% spin polarization are highly demanded for next-generation spintronic devices. Here, by using first-principles calculations, we have designed a class of new two-dimensional (2D) p-type half-metals, MSi2N4 (M = Al, Ga, In and Tl), which show high mechanical, thermal and dynamic stabilities. MSi2N4 not only have ultrawide electronic bandgaps for spin-up channels in the range of 4.05 to 6.82 eV but also have large half-metallic gaps in the range of 0.75 to 1.47 eV, which are large enough to prevent the spin-flip transition. The calculated magnetic moment is 1 μB per cell, resulting from polarized N1-px/py orbitals. Moreover, MSi2N4 possess robust long-range ferromagnetic orderings with Curie temperatures in the range of 35-140 K, originating from the interplay of N1-M-N1 superexchange interactions. Furthermore, spin dependent electronic transport calculations reveal 100% spin polarization. Our results highlight new promising 2D ferromagnetic half-metals toward future spintronic applications.
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Affiliation(s)
- Yi-Min Ding
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China.
| | - Yiqi Huo
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Gaojing Fang
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China.
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Luo Yan
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China.
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Yu Wu
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China.
| | - Liujiang Zhou
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China.
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
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11
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Alghamdi NM, Fadlallah MM, Al-qahtani HM, Maarouf AA. Electronic and Molecular Adsorption Properties of Pt-Doped BC 6N: An Ab-Initio Investigation. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:762. [PMID: 38727356 PMCID: PMC11085478 DOI: 10.3390/nano14090762] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/10/2024] [Revised: 04/16/2024] [Accepted: 04/20/2024] [Indexed: 05/12/2024]
Abstract
In the last two decades, significant efforts have been particularly invested in two-dimensional (2D) hexagonal boron carbon nitride h-BxCyNz because of its unique physical and chemical characteristics. The presence of the carbon atoms lowers the large gap of its cousin structure, boron nitride (BN), making it more suitable for various applications. Here, we use density functional theory to study the structural, electronic, and magnetic properties of Pt-doped BC6N (Pt-BC6N, as well as its adsorption potential of small molecular gases (NO, NO2, CO2, NH3). We consider all distinct locations of the Pt atom in the supercell (B, N, and two C sites). Different adsorption locations are also considered for the pristine and Pt-doped systems. The formation energies of all Pt-doped structures are close to those of the pristine system, reflecting their stability. The pristine BC6N is semiconducting, so doping with Pt at the B and N sites gives a diluted magnetic semiconductor while doping at the C1 and C2 sites results in a smaller gap semiconductor. We find that all doped structures exhibit direct band gaps. The studied molecules are very weakly physisorbed on the pristine structure. Pt doping leads to much stronger interactions, where NO, NO2, and NH3 chemisorb on the doped systems, and CO2 physiorb, illustrating the doped systems' potential for gas purification applications. We also find that the adsorption changes the electronic and magnetic properties of the doped systems, inviting their consideration for spintronics and gas sensing.
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Affiliation(s)
- Nada M. Alghamdi
- Department of Physics, College of Science, Imam Abdulrahman Bin Faisal University, Dammam 31441, Saudi Arabia;
| | | | - Hind M. Al-qahtani
- Department of Physics, College of Science and Humanities, Imam Abdulrahman Bin Faisal University, Jubail 35811, Saudi Arabia;
| | - Ahmed A. Maarouf
- Department of Physics, Faculty of Basic Sciences, German University in Cairo, New Cairo City 11835, Egypt
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12
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Jalil A, Zhao T, Firdous A, Kanwal A, Ali Raza SR, Rafiq A. Computational Insights into Schottky Barrier Heights: Graphene and Borophene Interfaces with H- and H́-XSi 2N 4 (X = Mo, W) Monolayers. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2024; 40:8463-8473. [PMID: 38591916 DOI: 10.1021/acs.langmuir.3c04045] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/10/2024]
Abstract
The two-dimensional (2D) semiconducting family of XSi2N4 (X = Mo and W), an emergent class of air-stable monolayers, has recently gained attention due to its distinctive structural, mechanical, transport, and optical properties. However, the electrical contact between XSi2N4 and metals remains a mystery. In this study, we inspect the electronic and transport properties, specifically the Schottky barrier height (SBH) and tunneling probability, of XSi2N4-based van der Waals contacts by means of first-principles calculations. Our findings reveal that the electrical contacts of XSi2N4 with metals can serve as the foundation for nanoelectronic devices with ultralow SBHs. We further analyzed the tunneling probability of different metal contacts with XSi2N4. We found that the H-phase XSi2N4/metal contact shows superior tunneling probability compared to that of H́-based metal contacts. Our results suggest that heterostructures at interfaces can potentially enable efficient tunneling barrier modulation in metal contacts, particularly in the case of MoSi2N4/borophene compared to MoSi2N4/graphene and WSi2N4/graphene in transport-efficient electronic devices. Among the studied heterostructures, tunneling efficiency is highest at the H and H́-MoSi2N4/borophene interfaces, with barrier heights of 2.1 and 1.52 eV, respectively, and barrier widths of 1.04 and 0.8 Å. Furthermore, the tunneling probability for these interfaces was identified to be 21.3 and 36.4%, indicating a good efficiency of carrier injection. Thus, our study highlights the potential of MoSi2N4/borophene contact in designing power-efficient Ohmic devices.
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Affiliation(s)
- Abdul Jalil
- NPU-NCP Joint International Research Center on Advanced Nanomaterials & Defects Engineering, Shaanxi Engineering Laboratory for Graphene New Carbon Materials and Applications, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China
| | - Tingkai Zhao
- NPU-NCP Joint International Research Center on Advanced Nanomaterials & Defects Engineering, Shaanxi Engineering Laboratory for Graphene New Carbon Materials and Applications, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China
| | - Ammara Firdous
- Department of Physics, Allama Iqbal Open University, Sector H-8, Islamabad 44000, Pakistan
| | - Arooba Kanwal
- Department of Physics, Allama Iqbal Open University, Sector H-8, Islamabad 44000, Pakistan
| | - Syed Raza Ali Raza
- Department of Physics, Allama Iqbal Open University, Sector H-8, Islamabad 44000, Pakistan
| | - Aftab Rafiq
- Department of Physics and Applied Mathematics, Pakistan Institute of Engineering and Applied Sciences, Lehtrar Road, Islamabad 44000, Pakistan
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13
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Li Z, Luo J, Zhou Y, Chen J, Ling H, Zeng J, Yang Y, Dong H. Asymmetric XMoGeY 2 (X = S, Se, Te; Y = N, P, As) monolayers as potential flexible materials for nano piezoelectric devices and nanomedical sensors. Phys Chem Chem Phys 2024; 26:12133-12141. [PMID: 38587498 DOI: 10.1039/d3cp05999e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/09/2024]
Abstract
Highly efficient nano piezoelectric devices and nanomedical sensors are in great demand for high-performance piezoelectric materials. In this work, we propose new asymmetric XMoGeY2 (X = S, Se, Te; Y = N, P, As) monolayers with excellent piezoelectric properties, dynamic stability and flexible elastic properties. The piezoelectric coefficients (d11) of XMoGeY2 monolayers range from 2.92 to 8.19 pm V-1. Among them, TeMoGeAs2 exhibits the highest piezoelectric coefficient (d11 = 8.19 pm V-1), which is 2.2 times higher than that of common 2D piezoelectric materials such as 2H-MoS2 (d11 = 3.73 pm V-1). Furthermore, all XMoGeY2 monolayers demonstrate flexible elastic properties ranging from 96.23 to 253.70 N m-1. Notably, TeMoGeAs2 has a Young's modulus of 96.23 N m-1, which is only one-third of that of graphene (336 N m-1). The significant piezoelectric coefficients of XMoGeY2 monolayers can be attributed to their asymmetric structures and flexible elastic properties. This study provides valuable insights into the potential applications of XMoGeY2 monolayers in nano piezoelectric devices and nanomedical sensors.
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Affiliation(s)
- Zujun Li
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou, 510006, China.
| | - Jiasheng Luo
- School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou 510006, China
| | - Yushan Zhou
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou, 510006, China.
| | - Jiawei Chen
- School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou 510006, China
| | - Haojun Ling
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou, 510006, China.
| | - Jun Zeng
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou, 510006, China.
| | - Yujue Yang
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou, 510006, China.
| | - Huafeng Dong
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou, 510006, China.
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong University of Technology, Guangzhou, 510006, China
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14
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Wei X, Zhang M, Zhang X, Lin Y, Jiang Z, Du A. Efficient Modulation of Schottky to Ohmic Contact in MoSi 2N 4/M 3C 2 (M = Zn, Cd, Hg) van der Waals Heterostructures. J Phys Chem Lett 2024; 15:3871-3883. [PMID: 38560820 DOI: 10.1021/acs.jpclett.4c00501] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
A strong Fermi level pinning (FLP) effect can induce a large Schottky barrier in metal/semiconductor contacts; reducing the Schottky barrier height (SBH) to form an Ohmic contact (OhC) is a critical problem in designing high-performance electronic devices. Herein, we report the interfacial electronic features and efficient modulation of the Schottky contact (ShC) to OhC for MoSi2N4/M3C2 (M = Zn, Cd, Hg) van der Waals heterostructures (vdWHs). We find that the MoSi2N4/M3C2 vdWHs can form a p-type ShC with small SBH with the calculated pinning factor S ≈ 0.8 for MoSi2N4/M3C2 contacts. These results indicate that the FLP effect can be effectively suppressed in MoSi2N4 contact with M3C2. Moreover, the interfacial properties and SBH of MoSi2N4/Zn3C2 vdWHs can be effectively modulated by a perpendicular electric field and biaxial strain. In particular, an efficient OhC can be achieved in MoSi2N4/Zn3C2 vdWHs by applying a positive electric field of 0.5 V/Å and strain of ±8%.
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Affiliation(s)
- Xinru Wei
- Shaanxi Key Laboratory for Theoretical Physics Frontiers, Institute of Modern Physics, Northwest University, Xi'an 710127, P. R. China
| | - Minjie Zhang
- Shaanxi Key Laboratory for Theoretical Physics Frontiers, Institute of Modern Physics, Northwest University, Xi'an 710127, P. R. China
| | - Xiaodong Zhang
- Shaanxi Key Laboratory for Theoretical Physics Frontiers, Institute of Modern Physics, Northwest University, Xi'an 710127, P. R. China
| | - Yanming Lin
- Shaanxi Key Laboratory for Theoretical Physics Frontiers, Institute of Modern Physics, Northwest University, Xi'an 710127, P. R. China
| | - Zhenyi Jiang
- Shaanxi Key Laboratory for Theoretical Physics Frontiers, Institute of Modern Physics, Northwest University, Xi'an 710127, P. R. China
| | - Aijun Du
- School of Chemistry and Physics, Queensland University of Technology, Gardens Point Campus, Brisbane, QLD 4000, Australia
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15
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Liu H, Chen L, Shen Y, Fan L, Zhang J, Zhu H, Shi Y, Yan S. Advances in selenium from materials to applications. NANOTECHNOLOGY 2024; 35:242003. [PMID: 38471145 DOI: 10.1088/1361-6528/ad32d3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2023] [Accepted: 03/11/2024] [Indexed: 03/14/2024]
Abstract
Over the past few decades, single-element semiconductors have received a great deal of attention due to their unique light-sensitive and heat-sensitive properties, which are of great application and research significance. As one promising material, selenium, being a typical semiconductor, has attracted significant attention from researchers due to its unique properties including high optical conductivity, anisotropic, thermal conductivity, and so on. To promote the application of selenium nanomaterials in various fields, numerous studies over the past few decades have successfully synthesized selenium nanomaterials in various morphologies using a wide range of physical and chemical methods. In this paper, we review and summarise the different methods of synthesis of various morphologies of selenium nanomaterials and discuss the applications of different nanostructures of selenium nanomaterials in optoelectronic devices, chemical sensors, and biomedical applications. Finally, we discuss possible challenges for selenium nanodevices and provide an outlook on the future applications of selenium nanomaterials.
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Affiliation(s)
- Hao Liu
- School of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Liping Chen
- School of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Yunkun Shen
- College of Automation & College of Artificial Intelligence, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Li Fan
- School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Jiawei Zhang
- School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Hongliang Zhu
- School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
| | - Yi Shi
- National Laboratory of Solid State Microstructures School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China
| | - Shancheng Yan
- School of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China
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16
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Wang Z, Zeng Y, Deng J, Wang Z, Guo Z, Yang Y, Xu X, Song B, Zeng G, Zhou C. Preparation and Application of Single-Atom Cobalt Catalysts in Organic Synthesis and Environmental Remediation. SMALL METHODS 2024; 8:e2301363. [PMID: 38010986 DOI: 10.1002/smtd.202301363] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/23/2023] [Revised: 11/04/2023] [Indexed: 11/29/2023]
Abstract
The development of high-performance catalysts plays a crucial role in facilitating chemical production and reducing environmental contamination. Single-atom catalysts (SACs), a class of catalysts that bridge the gap between homogeneous and heterogeneous catalysis, have garnered increasing attention because of their unique activity, selectivity, and stability in many pivotal reactions. Meanwhile, the scarcity of precious metal SACs calls for the arrival of cost-effective SACs. Cobalt, as a common non-noble metal, possesses tremendous potential in the field of single-atom catalysis. Despite their potential, reviews about single-atom Co catalysts (Co-SACs) are lacking. Accordingly, this review thoroughly summarized various preparation methodologies of Co-SACs, particularly pyrolysis; its application in the specific domain of organic synthesis and environmental remediation is discussed as well. The structure-activity relationship and potential catalytic mechanism of Co-SACs are elucidated through some representative reactions. The imminent challenges and development prospects of Co-SACs are discussed in detail. The findings and insights provided herein can guide further exploration and development in this charming area of catalyst design, leading to the realization of efficient and sustainable catalytic processes.
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Affiliation(s)
- Zihao Wang
- College of Environmental Science and Engineering and Key Laboratory of Environmental Biology and Pollution Control (Ministry of Education), Hunan University, Changsha, 410082, P.R. China
| | - Yuxi Zeng
- College of Environmental Science and Engineering and Key Laboratory of Environmental Biology and Pollution Control (Ministry of Education), Hunan University, Changsha, 410082, P.R. China
| | - Jie Deng
- College of Environmental Science and Engineering and Key Laboratory of Environmental Biology and Pollution Control (Ministry of Education), Hunan University, Changsha, 410082, P.R. China
| | - Ziwei Wang
- College of Environmental Science and Engineering and Key Laboratory of Environmental Biology and Pollution Control (Ministry of Education), Hunan University, Changsha, 410082, P.R. China
| | - Zicong Guo
- College of Environmental Science and Engineering and Key Laboratory of Environmental Biology and Pollution Control (Ministry of Education), Hunan University, Changsha, 410082, P.R. China
| | - Yang Yang
- Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alberta, T6G 1H9, Canada
| | - Xing Xu
- Shandong Key Laboratory of Water Pollution Control and Resource Reuse, School of Environmental Science and Engineering, Shandong University, Jinan, 250100, P. R. China
| | - Biao Song
- College of Environmental Science and Engineering and Key Laboratory of Environmental Biology and Pollution Control (Ministry of Education), Hunan University, Changsha, 410082, P.R. China
| | - Guangming Zeng
- College of Environmental Science and Engineering and Key Laboratory of Environmental Biology and Pollution Control (Ministry of Education), Hunan University, Changsha, 410082, P.R. China
| | - Chengyun Zhou
- College of Environmental Science and Engineering and Key Laboratory of Environmental Biology and Pollution Control (Ministry of Education), Hunan University, Changsha, 410082, P.R. China
- Jiangxi Province Key Laboratory of Drinking Water Safety, Nanchang, Jiangxi Province, 330013, P. R. China
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17
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Ahmad S, Din HU, Nguyen CQ, Nguyen ST, Nguyen C. Alkali to alkaline earth metals: a DFT study of monolayer TiSi 2N 4 for metal ion batteries. Dalton Trans 2024; 53:3785-3796. [PMID: 38305085 DOI: 10.1039/d3dt03946c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/03/2024]
Abstract
A significant problem in the area of rechargeable alkali ion battery technologies is the exploration of anode materials with overall high specific capacities and superior physical properties. By using first-principles calculations, we have determined that monolayer TiSi2N4 is precisely such a potential anode candidate. Its demonstrated dynamic, thermal, mechanical, and energetic stabilities make it feasible for experimental realization. An important benefit of the electrode conductivity is that the electronic structure reveals that the pristine system experiences a change from a semiconductor to a metal throughout the entire alkali adsorption process. What's more interesting is that monolayer TiSi2N4 can support up to double-sided 3-layer ad-atoms, resulting in extremely high theoretical capacities for Li, Na, Mg, and K of 1004, 854, 492 and 531 mA h g-1 and low average open-circuit voltages of 0.55, 0.25, 0.55, and -1.3 V, respectively. Alkali diffusion on the surface has been demonstrated to occur extremely quickly, with migration energy barriers for Li, Na, Mg, and K as low as 0.25, 0.14, 0.10, and 0.07 eV, respectively. The results reveal that the migration barrier energy is the lowest for Li and Mg from path-2 and Na and K from path-1. Overall, these findings suggest that monolayer TiSi2N4 is a suitable anode candidate for use in high-performance and low-cost metal-ion batteries.
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Affiliation(s)
- Sheraz Ahmad
- School of Materials Science and Engineering, Institute of New Energy Material Chemistry, Nankai University, Tianjin 300350, P. R. China
| | - H U Din
- Computational Science Research Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.
- Department of Physics, Bacha Khan University, Charsadda, KP, Pakistan
| | - Cuong Q Nguyen
- Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam.
- Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam
| | - Son-Tung Nguyen
- Faculty of Electrical Engineering, Hanoi University of Industry, Hanoi 100000, Vietnam.
| | - C Nguyen
- Le Quy Don Technical University, Hanoi 10000, Vietnam
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18
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Nha PH, Nguyen CV, Hieu NN, Phuc HV, Nguyen CQ. Theoretical prediction of electronic properties and contact barriers in a metal/semiconductor NbS 2/Janus MoSSe van der Waals heterostructure. NANOSCALE ADVANCES 2024; 6:1193-1201. [PMID: 38356616 PMCID: PMC10863720 DOI: 10.1039/d3na00852e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/03/2023] [Accepted: 01/08/2024] [Indexed: 02/16/2024]
Abstract
The emergence of van der Waals (vdW) heterostructures, which consist of vertically stacked two-dimensional (2D) materials held together by weak vdW interactions, has introduced an innovative avenue for tailoring nanoelectronic devices. In this study, we have theoretically designed a metal/semiconductor heterostructure composed of NbS2 and Janus MoSSe, and conducted a thorough investigation of its electronic properties and the formation of contact barriers through first-principles calculations. The effects of stacking configurations and the influence of external electric fields in enhancing the tunability of the NbS2/Janus MoSSe heterostructure are also explored. Our findings demonstrate that the NbS2/MoSSe heterostructure is not only structurally and thermally stable but also exfoliable, making it a promising candidate for experimental realization. In its ground state, this heterostructure exhibits p-type Schottky contacts characterized by small Schottky barriers and low tunneling barrier resistance, showing its considerable potential for utilization in electronic devices. Additionally, our findings reveal that the electronic properties, contact barriers and contact types of the NbS2/MoSSe heterostructure can be tuned by applying electric fields. A negative electric field leads to a conversion from a p-type Schottky contact to an n-type Schottky contact, whereas a positive electric field gives rise to a transformation from a Schottky into an ohmic contact. These insights offer valuable theoretical guidance for the practical utilization of the NbS2/MoSSe heterostructure in the development of next-generation electronic and optoelectronic devices.
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Affiliation(s)
- P H Nha
- Faculty of Electrical Engineering, Hanoi University of Industry Hanoi 100000 Vietnam
| | - Chuong V Nguyen
- Department of Materials Science and Engineering, Le Quy Don Technical University Hanoi Vietnam
| | - Nguyen N Hieu
- Institute of Research and Development, Duy Tan University Da Nang 550000 Vietnam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
| | - Huynh V Phuc
- Division of Theoretical Physics, Dong Thap University Cao Lanh 870000 Vietnam
| | - Cuong Q Nguyen
- Institute of Research and Development, Duy Tan University Da Nang 550000 Vietnam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
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19
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Yang N, Li H, Liu G, Yu Y, Huang L, Xu Z, Xiao X, Chen T. Tunable electronic properties and optoelectronic characteristics of MoGe 2N 4/SiC van der Waals heterostructure. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:195301. [PMID: 38286016 DOI: 10.1088/1361-648x/ad2389] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/08/2023] [Accepted: 01/29/2024] [Indexed: 01/31/2024]
Abstract
The assembly of van der Waals (vdW) heterostructure with easily regulated electronic properties provides a new way for the expansion of two-dimensional materials and promotes the development of optoelectronics, sensors, switching devices and other fields. In this work, a systematic investigation of the electronic properties of MoGe2N4/SiC heterostructures using density functional theory has been conducted, along with the modulation of electronic properties by vertical strain and the potential application prospects in optoelectronic devices. The results show that MoGe2N4/SiC heterostructure has excellent dynamic and thermal stability and belongs to type-II band alignment semiconductors. This is extremely beneficial for the separation of photo-generating electron-hole pairs, so it has important significance for the development of photovoltaic materials. In addition, under the control of vertical strain, the semiconductor-metal transition occurs in the MoGe2N4/SiC heterostructure when the compressive strain reaches 6%. In the case of compressive strain less than 6% and tensile strain, the MoGe2N4/SiC heterostructure maintains the type-II band alignment semiconductor characteristics. Meanwhile, we find that the MoGe2N4/SiC heterostructure has optical absorption coefficients of up to 105in the visible and ultraviolet light ranges, which can improve the absorption coefficients of the MoGe2N4and SiC monolayer in some visible light regions. Finally, the optical conductivity of the MoGe2N4/SiC heterostructure exhibits significant anisotropy, with the armchair direction displaying higher conductivity within the orange light range. In conclusion, the formation of vdW heterostructure by vertically stacking MoGe2N4and SiC monolayers can effectively improve their electronic and optical properties, which provides a valuable reference for the future development of electronic devices and photovoltaic materials.
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Affiliation(s)
- Ning Yang
- School of software Engineering, Jiangxi University of Science and Technolagy, Nanchang 330013, People's Republic of China
- Energy Materials Computing Center, Jiangxi University of Science and Technology, Nanchang 330013, People's Republic of China
| | - Hui Li
- Energy Materials Computing Center, Jiangxi University of Science and Technology, Nanchang 330013, People's Republic of China
- Department of Applied Physics, East China Jiaotong University, Nanchang 330013, People's Republic of China
| | - Guogang Liu
- School of software Engineering, Jiangxi University of Science and Technolagy, Nanchang 330013, People's Republic of China
- Energy Materials Computing Center, Jiangxi University of Science and Technology, Nanchang 330013, People's Republic of China
| | - Yang Yu
- Energy Materials Computing Center, Jiangxi University of Science and Technology, Nanchang 330013, People's Republic of China
| | - Lin Huang
- Energy Materials Computing Center, Jiangxi University of Science and Technology, Nanchang 330013, People's Republic of China
| | - Zhonghui Xu
- School of software Engineering, Jiangxi University of Science and Technolagy, Nanchang 330013, People's Republic of China
| | - Xianbo Xiao
- School of Computer Science, Jiangxi University of Chinese Medicine, Nanchang 330004, People's Republic of China
| | - Tong Chen
- Energy Materials Computing Center, Jiangxi University of Science and Technology, Nanchang 330013, People's Republic of China
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20
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Kim J, Lee J, Lee JM, Facchetti A, Marks TJ, Park SK. Recent Advances in Low-Dimensional Nanomaterials for Photodetectors. SMALL METHODS 2024; 8:e2300246. [PMID: 37203281 DOI: 10.1002/smtd.202300246] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2023] [Revised: 04/21/2023] [Indexed: 05/20/2023]
Abstract
New emerging low-dimensional such as 0D, 1D, and 2D nanomaterials have attracted tremendous research interests in various fields of state-of-the-art electronics, optoelectronics, and photonic applications due to their unique structural features and associated electronic, mechanical, and optical properties as well as high-throughput fabrication for large-area and low-cost production and integration. Particularly, photodetectors which transform light to electrical signals are one of the key components in modern optical communication and developed imaging technologies for whole application spectrum in the daily lives, including X-rays and ultraviolet biomedical imaging, visible light camera, and infrared night vision and spectroscopy. Today, diverse photodetector technologies are growing in terms of functionality and performance beyond the conventional silicon semiconductor, and low-dimensional nanomaterials have been demonstrated as promising potential platforms. In this review, the current states of progress on the development of these nanomaterials and their applications in the field of photodetectors are summarized. From the elemental combination for material design and lattice structure to the essential investigations of hybrid device architectures, various devices and recent developments including wearable photodetectors and neuromorphic applications are fully introduced. Finally, the future perspectives and challenges of the low-dimensional nanomaterials based photodetectors are also discussed.
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Affiliation(s)
- Jaehyun Kim
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Junho Lee
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, South Korea
| | - Jong-Min Lee
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, South Korea
| | - Antonio Facchetti
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Tobin J Marks
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Sung Kyu Park
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, South Korea
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21
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Li J, Cheng X, Zhang H. Ideal two-dimensional quantum spin Hall insulators MgA 2Te 4 (A = Ga, In) with Rashba spin splitting and tunable properties. Phys Chem Chem Phys 2024; 26:3815-3822. [PMID: 38168671 DOI: 10.1039/d3cp04898e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/05/2024]
Abstract
For decades, topological insulators have played a pivotal role in fundamental condensed-matter physics owing to their distinctive edge states and electronic properties. Here, based on in-depth first-principles calculations, we investigate the MgA2Te4 (A = Ga, In) structures belonging to the MA2Z4 2D material family. Among them, the topological insulator MgGaInTe4 exhibits band inversion and a sizeable bandgap of up to 60.8 meV which satisfies the requirement for room-temperature realization. Under the spin-orbit coupling effect, MgGaInTe4 with inversion asymmetry undergoes Rashba spin splitting. The Rashba-like and Dirac-type edge states emerge from different terminals along (010) for MgGaInTe4. The external vertical electric field is verified to modulate the inverted bandgap and topological state of MgGaInTe4 by converting a nontrivial state to a trivial state and MgIn2Te4 with the original trivial state to a nontrivial one. Accordingly, MgGaInTe4 and MgIn2Te4 have significant potential for application in topological quantum field-effect transistors. Our research identifies that the MgA2Te4 (A = Ga, In) structures have huge potential to be candidate 2D materials for spintronics and topological quantum devices.
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Affiliation(s)
- Jiaqi Li
- College of Physics, Sichuan University, Chengdu 610065, China.
- Key Laboratory of High Energy Density Physics and Technology (Ministry of Education), Sichuan University, Chengdu 610065, China
| | - Xinlu Cheng
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China
| | - Hong Zhang
- College of Physics, Sichuan University, Chengdu 610065, China.
- Key Laboratory of High Energy Density Physics and Technology (Ministry of Education), Sichuan University, Chengdu 610065, China
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22
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An Z, Lv L, Su Y, Jiang Y, Guan Z. Carrier doping modulates the magnetoelectronic and magnetic anisotropic properties of two-dimensional MSi 2N 4 (M = Cr, Mn, Fe, and Co) monolayers. Phys Chem Chem Phys 2024; 26:4208-4217. [PMID: 38230688 DOI: 10.1039/d3cp05032g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/18/2024]
Abstract
Through extensive density functional theory (DFT) calculations, our investigation delves into the stability, electrical characteristics, and magnetic behavior of monolayers (MLs) of MSi2N4. Computational analyses indicate intrinsic antiferromagnetic (AFM) orders within the MSi2N4 MLs, as a result of direct exchange interactions among transition metal (M) atoms. We further find that CrSi2N4 and CoSi2N4 MLs with primitive cells (pcells) exhibit half-metallic properties, with respective spin-β electron gaps of 3.661 and 2.021 eV. In contrast, MnSi2N4 and FeSi2N4 MLs with pcells act as semiconductors, having energy gaps of 0.427 and 0.282 eV, respectively. When the SOC is considered, the CrSi2N4, MnSi2N4 and FeSi2N4 MLs are metals, while the CoSi2N4 ML is a semiconductor. Our findings imply the dynamics and thermodynamic stability of MSi2N4 MLs. We have also explored the influence of carrier doping on the electromagnetic attributes of MSi2N4 MLs. Interestingly, charge doping could transform CrSi2N4, MnSi2N4, and CoSi2N4 MLs from their original AFM state into a ferromagnetic (FM) order. Moreover, carrier doping transformed CrSi2N4 and CoSi2N4 MLs from spin-polarized metals to half-metals (HMs). It is of particular note that doping of CrSi2N4 MLs with +0.9 e per pcell or more holes caused a switch in the easy axis (EA) to the [001] axis. The demonstrated intrinsic AFM order, excellent thermodynamic and kinetic stability, adjustable magnetism, and half-metallicity of the MSi2N4 family suggest its promising potential for applications in the realm of spintronics.
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Affiliation(s)
- Ziyuan An
- Key Laboratory of Colloid and Interface Chemistry, Ministry of Education, School of Chemistry and Chemical Engineering, Shandong University, Jinan, Shandong 250100, P. R. China.
| | - Linhui Lv
- Key Laboratory of Colloid and Interface Chemistry, Ministry of Education, School of Chemistry and Chemical Engineering, Shandong University, Jinan, Shandong 250100, P. R. China.
| | - Ya Su
- School of Electrical Engineering, Shandong University, Jinan, Shandong 250100, P. R. China.
| | - Yanyan Jiang
- Key Laboratory for Liquid-Solid Structural Evolution & Processing of Materials (Ministry of Education), School of Materials Science and Engineering, Shandong University, Jinan, Shandong, 250061, P. R. China
| | - Zhaoyong Guan
- Key Laboratory of Colloid and Interface Chemistry, Ministry of Education, School of Chemistry and Chemical Engineering, Shandong University, Jinan, Shandong 250100, P. R. China.
- School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100, P. R. China
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23
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Jia K, Dong XJ, Li SS, Ji WX, Zhang CW. Novel valley character and tunable quasi-half-valley metal state in Janus monolayer VSiGeP 4. Phys Chem Chem Phys 2024; 26:4683-4691. [PMID: 38251932 DOI: 10.1039/d3cp05636h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/23/2024]
Abstract
The manipulation and regulation of valley characteristics have aroused widespread interest in emerging information fields and fundamental research. Realizing valley polarization is one crucial issue for spintronic and valleytronic applications, the concepts of a half-valley metal (HVM) and ferrovalley (FV) materials have been put forward. Then, to separate electron and hole carriers, a fresh concept of a quasi-HVM (QHVM) has been proposed, in which only one type of carrier is valley polarized for electron and hole carriers. Based on first-principles calculations, we demonstrate that the Janus monolayer VSiGeP4 has QHVM character. To well regulate the QHVM state, strain engineering is utilized to adjust the electronic and valley traits of monolayer VSiGeP4. In the discussed strain range, monolayer VSiGeP4 always favors the ferromagnetic ground state and out-of-plane magnetization, which ensures the appearance of spontaneous valley polarization. It is found that the QHVM state can be induced in different electronic correlations (U), and the strain can effectively tune the valley, magnetic, and electronic features to maintain the QHVM state under various U values. Our work opens up a new research idea in the design of multifunctional spintronic and valleytronic devices.
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Affiliation(s)
- Kang Jia
- School of Physics and Physical Engineering, Qufu Normal University, Qufu, Shandong, 273100, People's Republic of China.
| | - Xiao-Jing Dong
- School of Physics and Physical Engineering, Qufu Normal University, Qufu, Shandong, 273100, People's Republic of China.
| | - Sheng-Shi Li
- School of Physics and Technology, Institute of Spintronics, University of Jinan, Jinan, Shandong, 250022, People's Republic of China
| | - Wei-Xiao Ji
- School of Physics and Technology, Institute of Spintronics, University of Jinan, Jinan, Shandong, 250022, People's Republic of China
| | - Chang-Wen Zhang
- School of Physics and Physical Engineering, Qufu Normal University, Qufu, Shandong, 273100, People's Republic of China.
- School of Physics and Technology, Institute of Spintronics, University of Jinan, Jinan, Shandong, 250022, People's Republic of China
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24
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Li C, Fang X, Zhang H, Zhang B. Recent Advances of Emerging Metal-Containing Two-Dimensional Nanomaterials in Tumor Theranostics. Int J Nanomedicine 2024; 19:805-824. [PMID: 38283201 PMCID: PMC10822123 DOI: 10.2147/ijn.s444471] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/30/2023] [Accepted: 01/15/2024] [Indexed: 01/30/2024] Open
Abstract
In recent years, metal-containing two-dimensional (2D) nanomaterials, among various 2D nanomaterials have attracted widespread attention because of their unique physical and chemical properties, especially in the fields of biomedical applications. Firstly, the review provides a brief introduction to two types of metal-containing 2D nanomaterials, based on whether metal species take up the major skeleton of the 2D nanomaterials. After this, the synthetical approaches are summarized, focusing on two strategies similar to other 2D nanomaterials, top-down and bottom-up methods. Then, the performance and evaluation of these 2D nanomaterials when applied to cancer therapy are discussed in detail. The specificity of metal-containing 2D nanomaterials in physics and optics makes them capable of killing cancer cells in a variety of ways, such as photodynamic therapy, photothermal therapy, sonodynamic therapy, chemodynamic therapy and so on. Besides, the integrated platform of diagnosis and treatment and the clinical translatability through metal-containing 2D nanomaterials is also introduced in this review. In the summary and perspective section, advanced rational design, challenges and promising clinical contributions to cancer therapy of these emerging metal-containing 2D nanomaterials are discussed.
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Affiliation(s)
- Chenxi Li
- Shenzhen Key Laboratory of Nanozymes and Translational Cancer Research, Institute of Translational Medicine Department of Otolaryngology Shenzhen Second People’s Hospital, the First Affiliated Hospital of Shenzhen University, Health Science Center, Shenzhen, 518035, People’s Republic of China
- Graduate Collaborative Training Base of Shenzhen Second People’s Hospital, Heng Yang Medical School, University of South China, Hengyang, Hunan, 421001, People’s Republic of China
| | - Xueyang Fang
- Shenzhen Key Laboratory of Nanozymes and Translational Cancer Research, Institute of Translational Medicine Department of Otolaryngology Shenzhen Second People’s Hospital, the First Affiliated Hospital of Shenzhen University, Health Science Center, Shenzhen, 518035, People’s Republic of China
| | - Han Zhang
- Shenzhen Key Laboratory of Nanozymes and Translational Cancer Research, Institute of Translational Medicine Department of Otolaryngology Shenzhen Second People’s Hospital, the First Affiliated Hospital of Shenzhen University, Health Science Center, Shenzhen, 518035, People’s Republic of China
- International Collaborative Laboratory of 2D, Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People’s Republic of China
| | - Bin Zhang
- Shenzhen Key Laboratory of Nanozymes and Translational Cancer Research, Institute of Translational Medicine Department of Otolaryngology Shenzhen Second People’s Hospital, the First Affiliated Hospital of Shenzhen University, Health Science Center, Shenzhen, 518035, People’s Republic of China
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25
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Dai Y, Zhang Z, Zhao P, Cheng Y. Interlayer-coupling-engineerable flat bands in twisted MoSi 2N 4bilayers. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:165501. [PMID: 38211330 DOI: 10.1088/1361-648x/ad1d86] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/20/2023] [Accepted: 01/11/2024] [Indexed: 01/13/2024]
Abstract
The two-dimensional layered semiconductor MoSi2N4, which has several advantages including high strength, excellent stability, high hole mobility, and high thermal conductivity, was recently successfully synthesized using chemical vapor deposition. Based on first-principles calculations, we investigate the effects of the twist angle and interlayer distance variation on the electronic properties of twisted bilayer MoSi2N4. The flat bands are absent for twisted bilayer MoSi2N4when the twist angleθis reduced to 3.89°. Taking twisted bilayer MoSi2N4withθof 5.09° as an example, we find that flat bands emerge as the interlayer distance decreases. As the interlayer distance can be effectively modulated by hydrostatic pressure, we propose hydrostatic pressure as a knob for tailoring the flat bands in twisted bilayer MoSi2N4. Our findings provide theoretical support for extending the applications of MoSi2N4in strong correlation physics and superconductivity.
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Affiliation(s)
- Yang Dai
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, People's Republic of China
| | - Zhineng Zhang
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, People's Republic of China
| | - Puqin Zhao
- School of Physical and Mathematical Sciences, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, People's Republic of China
| | - Yingchun Cheng
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, People's Republic of China
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26
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Liu MY, Li GQ, He Y, Xiong K. Tunable polarization properties of charge, spin, and valley in Janus VSiGeZ 4 (Z = N, P, As) monolayers. Phys Chem Chem Phys 2024; 26:2341-2354. [PMID: 38165967 DOI: 10.1039/d3cp04889f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/04/2024]
Abstract
Polarization, as an important characterization of the symmetry breaking systems, has attracted tremendous attention in two-dimensional (2D) materials. Due to their significant symmetry breaking, Janus 2D ferrovalley materials provide a desirable platform to investigate the charge, spin, and valley polarization, as well as their coupling effects. Herein, using first-principles calculations, the polarization properties of charge, spin, and valley in Janus VSiGeZ4 (Z = N, P, and As) monolayers are systematically studied. The mirror symmetry breaking leads to a non-zero dipole moment and surface work function difference, indicating the presence of out-of-plane charge polarization. Magnetic properties calculations demonstrate that VSiGeN4 is a 2D-XY magnet with a Berezinskii-Kosterlitz-Thouless temperature of 342 K, while VSiGeP4 and VSiGeAs4 have an out-of-plane magnetization with a Curie temperature below room temperature. The magnetization can be rotated by applying biaxial strain, allowing manipulation of the spin polarization via nonmagnetic means. The spontaneous valley polarization is predicted to be 46, 49, and 70 meV for VSiGeN4, VSiGeP4, and VSiGeAs4, respectively, whose physical origin can be elucidated by employing the model analysis. In particular, the biaxial strain can induce the valley polarization switching from the valence (conduction) band to conduction (valence) band, but it hardly changes the valley polarization strength. Meanwhile, the valley extremum is transformed from the K' (K) to K (K') points. The present work not only provides an underlying insight into the polarization properties of Janus VSiGeZ4 but also offers a class of promising materials for spintronic and valleytronic devices.
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Affiliation(s)
- Ming-Yang Liu
- Department of Physics and Electronic Science, Chuxiong Normal University, Chuxiong 675000, P. R. China.
| | - Guang-Qiang Li
- Department of Physics and Electronic Science, Chuxiong Normal University, Chuxiong 675000, P. R. China.
| | - Yao He
- Department of Physics, Yunnan University, Kunming 650091, P. R. China
| | - Kai Xiong
- Materials Genome Institute, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China
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27
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Gao Z, He Y, Xiong K. Two-dimensional SPdAZ 2 (A = Si, Ge; Z = N, P, As) monolayers with an intrinsic electric field for high-performance photocatalysis. Phys Chem Chem Phys 2023; 26:185-197. [PMID: 38053430 DOI: 10.1039/d3cp04936a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Two-dimensional materials exhibiting exceptional photocatalytic properties and a low carrier recombination rate have garnered significant attention. However, such attributes are relatively scarce among conventional two-dimensional materials. Two-dimensional Janus materials, owing to their intrinsic electric field, hold substantial promise in the realm of photocatalysis. In this study, we conducted a comprehensive investigation of the electronic, optical and photocatalytic properties, as well as the carrier mobility of SPdAZ2 (A = Si, Ge; Z = N, P, As) monolayers employing first-principles calculations. Employing the HSE06 hybrid density functional, we discovered that all six structures exhibit semiconductor characteristics with indirect band gaps under equilibrium conditions. Notably, SPdSiP2, SPdSiAs2, and SPdGeP2 monolayers displayed advantageous band edge positions, facilitating effective photocatalytic water decomposition. Furthermore, we computed the carrier mobility of SPdAZ2 monolayers, revealing significant variations in the electron and hole mobility along the same direction, which enhances the effective separation of electrons and holes. Finally, we explored the impact of biaxial strain and an applied electric field on the electronic properties, photocatalysis, and light absorption of SPdAZ2 monolayers. These compelling features underscore the broad potential applications of SPdAZ2 (A = Si, Ge; Z = N, P, As) monolayers in the realm of photocatalytic water decomposition.
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Affiliation(s)
- Zhen Gao
- Department of Physics, Yunnan University, Kunming 650091, People's Republic of China.
| | - Yao He
- Department of Physics, Yunnan University, Kunming 650091, People's Republic of China.
| | - Kai Xiong
- Materials Genome Institute, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China.
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28
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Nguyen Thi BN, Ha CV, Thi Ha Lien N, Guerrero-Sanchez J, Hoat DM. Doping-mediated electronic and magnetic properties of graphene-like ionic NaX (X = F and Cl) monolayers. Phys Chem Chem Phys 2023; 25:32569-32577. [PMID: 37999640 DOI: 10.1039/d3cp02115g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2023]
Abstract
In this work, the stability, and electronic and magnetic properties of pristine and doped graphene-like ionic NaX (X = F and Cl) monolayers are explored using first-principles calculations. The good stability of NaF and NaCl monolayers is confirmed by phonon dispersion curves and ab initio molecular dynamics simulations. Electronic structure calculations show their insulator nature with large indirect band gaps of 5.43 (7.26) and 5.06 (6.32) eV as calculated with the PBE (HSE06) functional, respectively. In addition, their ionic character is also demonstrated. Furthermore, a doping approach is explored to functionalize NaX monolayers for spintronic applications. For such a goal, IIA- and VIA-group atoms are selected as dopants due to their dissimilar valence electronic configuration as compared with the host atoms. The results indicate the emergence of magnetic semiconductor nature with a total magnetic moment of 1μB. Herein, magnetic properties are produced mainly by the dopant atoms, which induce new middle-gap energy states around the Fermi level. Finally, the effects of codoping the NaF monolayer with Ca and O and NaCl with Ba and O are also examined. Adjacent Ca-O and Ba-O pairs preserve the non-magnetic nature. Further separating dopants leads to the emergence of magnetic semiconductor behavior, with lower magnetization than separate doping. This work introduces new ionic 2D materials for optoelectronic and spintronic applications, contributing to the research effort to find out new 2D multifunctional materials.
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Affiliation(s)
- Bich Ngoc Nguyen Thi
- Institute of Physics, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Cau Giay, Hanoi, Vietnam
| | - Chu Viet Ha
- Faculty of Physics, TNU-University of Education, Thai Nguyen, 250000, Vietnam
| | - Nghiem Thi Ha Lien
- Institute of Physics, Vietnam Academy of Science and Technology, 10 Dao Tan, Ba Dinh, Hanoi, Vietnam
| | - J Guerrero-Sanchez
- Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología, Apartado Postal 14, Ensenada, Baja California, Código Postal 22800, Mexico
| | - D M Hoat
- Institute of Theoretical and Applied Research, Duy Tan University, Ha Noi 100000, Vietnam.
- Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam
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29
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Zhao J, Qi Y, Yao C, Zeng H. Modulating the electronic properties and band alignments of the arsenene/MoSi 2N 4 van der Waals heterostructure via applying strain and electric field. Phys Chem Chem Phys 2023. [PMID: 38032541 DOI: 10.1039/d3cp04877b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/01/2023]
Abstract
The two-dimensional (2D) MoSi2N4 monolayer fabricated recently has attracted extensive attention due to its exotic electronic properties and excellent stability for future applications. Using first-principles calculations, we have shown that the electronic properties of the arsenene/MoSi2N4 van der Waals (vdW) heterostructure can be effectively modulated by applying in-plane/vertical strain and vertical electric field. The arsenene/MoSi2N4 vdW heterostructure has type-II band alignment, facilitating the separation of photogenerated electron-hole pairs. The heterostructure is predicted to have an indirect bandgap of about 0.52 eV by using the PBE functional (0.87 eV by using the hybrid functional). Furthermore, under εz = 0.5 Å vertical tensile strain or -0.05 V Å-1 vertical electric field, the arsenene/MoSi2N4 heterostructure can not only experience transition from an indirect to a direct bandgap semiconductor, but also exhibit type-II to type-I band alignment transition. The calculated optical absorption properties reveal that the formation of the vdW heterostructure can effectively enhance the light absorption, and the absorption coefficient in visible and ultraviolet regions is much higher than those of the arsenene and the MoSi2N4 monolayer. Most importantly, based on charge transfer analysis, we proposed the modulation mechanism of the electronic properties of the vdW heterostructure influenced by vertical strain and electric field. Our study provides physical insights into manipulating the electronic and optoelectronic properties of MoSi2N4 based vdW heterostructures, which may be helpful for their practical applications.
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Affiliation(s)
- Jun Zhao
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, China.
| | - Yunxi Qi
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, China.
| | - Can Yao
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, China.
| | - Hui Zeng
- School of Microelectronics, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, China.
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30
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Geng L, Chen K, Lu H, Wang S, Yang Y. Exploring electronic and valley properties of single-layer SMSiN 2 (M = Mo, W): a first-principles study on two-dimensional Janus materials. Phys Chem Chem Phys 2023; 25:32021-32028. [PMID: 37981807 DOI: 10.1039/d3cp04283a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2023]
Abstract
In this study, we employ first-principles calculations to explore the electronic and valleytronic properties of single-layer (SL) SMSiN2 (M = Mo, W), which are two-dimensional Janus materials with strong spin-orbit coupling. Our findings indicate that SL SMoSiN2/SWSiN2 possess a direct/indirect band gap, where the valence band maximum is situated at the K/K' point, giving rise to the formation of degenerate valleys. When considering spin-orbit coupling, SMoSiN2 and SWSiN2 demonstrate intriguing valley spin splitting in their valleys, with a maximum splitting of up to 0.14/0.39 eV in the valence bands. By implementing magnetic doping with V and Cr, we provide a demonstration that valley polarization could be realized in SL SMSiN2. Moreover, the findings reveal high carrier mobility in SL SMSiN2, notably in SWSiN2, where hole carriers can achieve a remarkable mobility of up to 7.98 × 103 cm2 V-1 s-1 along the zigzag direction. Furthermore, our observations suggest that strain can be effectively utilized to manipulate the character and magnitude of the band gap, as well as the valley spin splitting in these materials.
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Affiliation(s)
- Lijie Geng
- School of Electronics and Information, Zhengzhou University of Light Industry, Zhengzhou, China.
- Henan Key Laboratory of Magnetoelectronic Information Functional Materials, Zhengzhou University of Light Industry, Zhengzhou, China
| | - Kun Chen
- School of Electronics and Information, Zhengzhou University of Light Industry, Zhengzhou, China.
- Henan Key Laboratory of Magnetoelectronic Information Functional Materials, Zhengzhou University of Light Industry, Zhengzhou, China
| | - Hongyan Lu
- School of Physics and Physical Engineering, Qufu Normal University, Qufu, China
| | - Shizhuo Wang
- School of Electronics and Information, Zhengzhou University of Light Industry, Zhengzhou, China.
- Henan Key Laboratory of Magnetoelectronic Information Functional Materials, Zhengzhou University of Light Industry, Zhengzhou, China
| | - Yang Yang
- School of Electronics and Information, Zhengzhou University of Light Industry, Zhengzhou, China.
- Henan Key Laboratory of Magnetoelectronic Information Functional Materials, Zhengzhou University of Light Industry, Zhengzhou, China
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31
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Gao Z, He Y, Xiong K. Two-dimensional Janus SVAN 2 (A = Si, Ge) monolayers with intrinsic semiconductor character and room temperature ferromagnetism: tunable electronic properties via strain and an electric field. Dalton Trans 2023; 52:17416-17425. [PMID: 37947052 DOI: 10.1039/d3dt03031h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2023]
Abstract
In the context of developing next-generation information technology, two-dimensional materials with inherent ferromagnetism, a Curie temperature above room temperature, and significant magnetic anisotropy hold great promise. In this work, we employed first-principles calculations to investigate a novel two-dimensional Janus structure, namely SVAN2 (A = Si, Ge). Our findings reveal that these structures are not only dynamically and thermally stable, but also exhibit semiconductor properties alongside their ferromagnetic states. The Janus SVSiN2 monolayer exhibits an in-plane easy axis, while the SVGeN2 monolayer shows an out-of-plane easy axis, both characterized by a significant magnetic anisotropy energy (129 and 172 μeV, respectively). Notably, through Monte Carlo simulation, we found that the Curie temperature of the SVSiN2 monolayer is 330 K, which is higher than room temperature. Finally, by applying biaxial strain and an external electric field, we successfully regulated the electronic properties of the SVAN2 (A = Si, Ge) monolayers, enabling a transition from semiconductor to half-metallic behavior. These remarkable electronic and magnetic properties make the Janus SVAN2 (A = Si, Ge) monolayers promising candidate materials for spin electron applications.
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Affiliation(s)
- Zhen Gao
- Department of Physics, Yunnan University, Kunming 650091, People's Republic of China.
| | - Yao He
- Department of Physics, Yunnan University, Kunming 650091, People's Republic of China.
| | - Kai Xiong
- Materials Genome Institute, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China
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32
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Liu D, Liu Z, Zhu J, Zhang M. Hydrogen-bonding enables two-dimensional metal/semiconductor tunable contacts approaching the quantum limit and the modified Schottky-Mott limit simultaneously. MATERIALS HORIZONS 2023; 10:5621-5632. [PMID: 37752785 DOI: 10.1039/d3mh00736g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/28/2023]
Abstract
Achieving efficient electrical contacts in two-dimensional (2D) semiconductors is increasingly critical with the continuous scaling down of transistors. van der Waals (vdW) contacts with weak Fermi-level pinning are still hindered by the additional contact resistance due to weak interlayer coupling. Here, based on first-principles, we propose to exploit hydrogen-bonding interactions to intrinsically overcome the inherent vdW gap. Various metal/semiconductor heterojunctions with hydroxyl-terminated MXenes as the metal electrode demonstrate clean Ohmic contacts with ultralow contact resistance approaching the quantum limit via strong hydrogen-bonding of O-H⋯X (X = N, O, S, Se, etc.) at the interface. Hydrogen-bonding contacts are further shown to be an advantageous approach to achieve near-perfect N-type contacts for emerging 2D nitride, oxide, halide, and chalcogenide semiconductors that can simultaneously approach the modified Schottky-Mott limit. We finally discuss the general design concepts for hydrogen-bonding contacts, demonstrating their potential to go beyond vdW contacts in achieving ideal electrical contacts in 2D semiconductors.
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Affiliation(s)
- Dexing Liu
- School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China.
| | - Ziyi Liu
- School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China.
| | - Jiahao Zhu
- School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China.
| | - Min Zhang
- School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China.
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33
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Anh NPQ, Hiep NT, Lu DV, Nguyen CQ, Hieu NN, Vi VTT. Crystal lattice and electronic and transport properties of Janus ZrSiSZ 2 (Z = N, P, As) monolayers by first-principles investigations. NANOSCALE ADVANCES 2023; 5:6705-6713. [PMID: 38024315 PMCID: PMC10662022 DOI: 10.1039/d3na00631j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/11/2023] [Accepted: 10/24/2023] [Indexed: 12/01/2023]
Abstract
From the extending requirements for using innovative materials in advanced technologies, it is necessary to explore new materials for relevant applications. In this work, we design new two-dimensional (2D) Janus ZrSiSZ2 (Z = N, P, As) monolayers and investigate their crystal lattice and dynamic stability by using density functional theory investigations. The two stable structures of ZrSiSP2 and ZrSiSAs2 are then systematically examined for thermal, energetic, and mechanical stability, and electronic and transport properties. The calculation results demonstrate that both the ZrSiSP2 and ZrSiSAs2 monolayers have good thermal stability at room temperature and high energetic/mechanical stabilities for experimental synthesis. The studied structures are found to be in-direct semiconductors. Specifically, with moderate band-gap energies of 1.04 to 1.29 eV for visible light absorption, ZrSiSP2 and ZrSiSAs2 can be considered potential candidates for photovoltaic applications. The applied biaxial strains and external electric fields slightly change the band-gap energies of the monolayers. We also calculate the carrier mobilities for the transport properties based on the deformation potential method. Due to the lower effective masses, the carrier mobilities in the x direction are higher than those in the y direction. The carrier mobilities of the ZrSiSP2 and ZrSiSAs2 monolayers are anisotropic not only in transport directions but also for the electrons and holes. We believe that the results of our work may stimulate further studies to explore more new 2D Janus monolayers with novel properties of the MA2Z4 family materials.
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Affiliation(s)
- Nguyen P Q Anh
- Faculty of Electrical, Electronics and Materials Technology, University of Sciences, Hue University Hue 530000 Vietnam
| | - Nguyen T Hiep
- Institute of Research and Development, Duy Tan University Da Nang 550000 Vietnam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
| | - D V Lu
- Faculty of Physics, The University of Danang - University of Science and Education Da Nang 550000 Vietnam
| | - Cuong Q Nguyen
- Institute of Research and Development, Duy Tan University Da Nang 550000 Vietnam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
| | - Nguyen N Hieu
- Institute of Research and Development, Duy Tan University Da Nang 550000 Vietnam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
| | - Vo T T Vi
- Faculty of Basic Sciences, University of Medicine and Pharmacy, Hue University Hue 530000 Vietnam
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Li YQ, Zhang X, Shang X, He QW, Tang DS, Wang XC, Duan CG. Magnetic and Ferroelectric Manipulation of Valley Physics in Janus Piezoelectric Materials. NANO LETTERS 2023; 23:10013-10020. [PMID: 37856232 DOI: 10.1021/acs.nanolett.3c03238] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/21/2023]
Abstract
The realization of multiferroic materials offers the possibility of multifunctional electronic device design. However, the coupling between the multiferroicity and piezoelectricity in Janus materials is rarely reported. In this study, we propose a mechanism for manipulating valley physics by magnetization reversing and ferroelectric switching in multiferroic and piezoelectric material. The ferromagnetic VSiGeP4 monolayer exhibits a large valley polarization up to 100 meV, which can be effectively operated by reversing magnetization. Interestingly, the antiferromagnetic VSiGeP4 bilayers with AB and BA stacking configurations allow the coexistence of valley polarization and ferroelectricity, supporting the proposed strategy for manipulating valley physics via ferroelectric switching and interlayer sliding. In addition, the VSiGeP4 monolayer contains remarkable tunable piezoelectricity regulated by electron correlation U. This study proposes a feasible idea for regulating valley polarization and a general design idea for multifunctional devices with multiferroic and piezoelectric properties, facilitating the miniaturization and integration of nanodevices.
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Affiliation(s)
- Yun-Qin Li
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science and Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai 200241, China
| | - Xian Zhang
- Henan Key Laboratory of Photoelectric Energy Storage Materials and Applications, School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, China
| | - Xiao Shang
- Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China
| | - Qi-Wen He
- Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China
| | - Dai-Song Tang
- Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China
| | - Xiao-Chun Wang
- School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China
- Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China
| | - Chun-Gang Duan
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science and Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai 200241, China
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35
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Oreshonkov AS, Sukhanova EV, Popov ZI. Phonon dynamics in MoSi 2N 4: insights from DFT calculations. Phys Chem Chem Phys 2023; 25:29831-29841. [PMID: 37888343 DOI: 10.1039/d3cp02921b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/28/2023]
Abstract
We have reported the density functional theory investigations on the monolayered, 2 layered and bulk MoSi2N4 in three structural modifications called α1 [Y.-L. Hong, et al., Chemical Vapor Deposition of Layered Two-Dimensional MoSi2N4 Materials, Science, 2020, 369(6504), 670-674, DOI: 10.1126/science.abb7023], α2 and α3 [Y. Yin, Q. Gong, M. Yi and W. Guo, Emerging Versatile Two-Dimensional MoSi2N4 Family, Adv. Funct. Mater., 2023, 2214050, DOI: 10.1002/adfm.202214050]. We showed that in the case of monolayers the difference in total energies is less than 0.1 eV between α1 and α3 phases, and less than 0.2 eV between α1 and α2 geometries. The most energetically favorable layer stacking for the bulk structures of each phase was investigated. All considered modifications are dynamically stable from a single layer to a bulk structure in energetically favorable stacking. Raman spectra for the monolayered, 2 layered and bulk structures were simulated and the vibrational analysis was performed. The main difference in the obtained spectra is associated with the position of the strongest band which depends on the Mo-N bond length. According to the obtained data, we can conclude that the Raman line at 348 cm-1 in the experimental spectra of MoSi2N4 can have more complex explanation than just Γ-point Raman-active vibration as was discussed before in [Y.-L. Hong, et al., Chemical Vapor Deposition of Layered Two-Dimensional MoSi2N4 Materials, Science, 2020, 369(6504), 670-674, DOI: 10.1126/science.abb7023].
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Affiliation(s)
- A S Oreshonkov
- Emanuel Institute of Biochemical Physics of Russian Academy of Sciences, Moscow 119334, Russia
- Laboratory of Molecular Spectroscopy, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk 660036, Russia.
- School of Engineering and Construction, Siberian Federal University, Krasnoyarsk 660041, Russia
| | - E V Sukhanova
- Emanuel Institute of Biochemical Physics of Russian Academy of Sciences, Moscow 119334, Russia
- Moscow Institute of Physics and Technology, Institutsky lane 9, Dolgoprudny, Moscow region, 141700, Russia
| | - Z I Popov
- Emanuel Institute of Biochemical Physics of Russian Academy of Sciences, Moscow 119334, Russia
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Cai X, Chen G, Li R, Yu W, Yang X, Jia Y. Janus MoAZ 3H (A = Ge, Si; Z = N, P, As) monolayers: a new class of semiconductors exhibiting excellent photovoltaic and catalytic performances. Phys Chem Chem Phys 2023; 25:29594-29602. [PMID: 37877368 DOI: 10.1039/d3cp02622a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2023]
Abstract
Due to the asymmetrical structure in the vertical direction, Janus two-dimensional (2D) monolayer (ML) materials possess some unique physical properties, holding great promise for nanoscale devices. In this paper, based on the newly discovered MoA2Z4 (A = Si, Ge; Z = N, P, As) ML, we propose a class of 2D Janus MoAZ3H ML materials with good stability and excellent mechanical properties using first-principles calculations. We demonstrate that the novel Janus MoAZ3H ML materials are all semiconductors with bandgaps ranging from 0.69 to 2.44 eV, giving rise to good absorption in the visible light region. Especially, both MoSiN3H and MoGeN3H MLs can be used as catalysts for producing hydrogen through water splitting. This catalytic property is much more efficient than that of the MoA2Z4 ML, attributed to the intrinsic electric field induced by the vertical asymmetry effectively separating electrons and holes. More importantly, the carrier mobility of the MoAZ3H ML is up to 103-104 cm2 V-1 s-1 due to the large elastic modulus or small effective mass. Additionally, the electronic properties of the MoAZ3H ML can be easily tuned by strain. Our results suggest a new strategy for designing novel 2D Janus materials, which not only expands the members in the 2D MA2Z4-based Janus family, but also provide candidates with excellent performances in photovoltaic and catalytic fields.
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Affiliation(s)
- Xiaolin Cai
- School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China.
| | - Guoxing Chen
- School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China.
| | - Rui Li
- School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China.
| | - Weiyang Yu
- School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China.
| | - Xuefeng Yang
- School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China.
| | - Yu Jia
- Key Laboratory for Special Functional Materials of Ministry of Education, Collaborative Innovation Center of Nano Functional Materials and Applications, School of Material Science and Engineering, Henan University, Kaifeng 475004, China.
- International Laboratory for Quantum Functional Materials of Henan, and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China
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Xiong R, Chen X, Zhang Y, Cui Z, Wen J, Wen C, Wang J, Wu B, Sa B. Unraveling the Emerging Photocatalytic, Thermoelectric, and Topological Properties of Intercalated Architecture MZX (M = Ga and In; Z = Si, Ge and Sn; X = S, Se, and Te) Monolayers. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2023; 39:15837-15847. [PMID: 37877670 DOI: 10.1021/acs.langmuir.3c02636] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/26/2023]
Abstract
The continuous advancements in studying two-dimensional (2D) materials pave the way for groundbreaking innovations across various industries. In this study, by employing density functional theory calculations, we comprehensively elucidate the electronic structures of MZX (M = Ga and In; Z = Si, Ge, and Sn; X = S, Se, and Te) monolayers for their applications in photocatalytic, thermoelectric, and spintronic fields. Interestingly, GaSiS, GaSiSe, InSiS, and InSiSe monolayers are identified to be efficient photocatalysts for overall water splitting with band gaps close to 2.0 eV, suitable band edge positions, and excellent optical harvest ability. In addition, the InSiTe monolayer exhibits a ZT value of 1.87 at 700 K, making it highly appealing for applications in thermoelectric devices. It is further highlighted that GaSnTe, InSnS, and InSnSe monolayers are predicted to be 2D topological insulators (TIs) with bulk band gaps of 115, 54, and 152 meV, respectively. Current research expands the family of 2D GaGeTe materials and establishes a path toward the practical utilization of MZX monolayers in energy conversion and spintronic devices.
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Affiliation(s)
- Rui Xiong
- Multiscale Computational Materials Facility, Institute of Material Genome Engineering, Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, P. R. China
| | - Xiangbin Chen
- Multiscale Computational Materials Facility, Institute of Material Genome Engineering, Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, P. R. China
| | - Yinggan Zhang
- College of Materials, Fujian Provincial Key Laboratory of Theoretical and Computational Chemistry, Xiamen University, Xiamen 361005, P. R. China
| | - Zhou Cui
- Multiscale Computational Materials Facility, Institute of Material Genome Engineering, Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, P. R. China
| | - Jiansen Wen
- Multiscale Computational Materials Facility, Institute of Material Genome Engineering, Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, P. R. China
| | - Cuilian Wen
- Multiscale Computational Materials Facility, Institute of Material Genome Engineering, Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, P. R. China
| | - Jiong Wang
- Powder Metallurgy Research Institute, Central South University, Changsha 410083, P. R. China
| | - Bo Wu
- Multiscale Computational Materials Facility, Institute of Material Genome Engineering, Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, P. R. China
| | - Baisheng Sa
- Multiscale Computational Materials Facility, Institute of Material Genome Engineering, Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, P. R. China
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38
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Gao Z, He Y, Xiong K. Strain and electric field induced electronic property modifications in two-dimensional Janus SZrAZ 2 (A = Si, Ge; Z = P, As) monolayers. Dalton Trans 2023; 52:15918-15927. [PMID: 37840521 DOI: 10.1039/d3dt02904b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/17/2023]
Abstract
Recently, significant attention has been directed towards two-dimensional Janus materials owing to their unique structure and novel properties. In this work, we have introduced novel two-dimensional Janus monolayers, SZrAZ2 (A = Si, Ge; Z = P, As), through first principles. Our primary focus was the investigation of the controllable electronic properties exhibited by the Janus SZrAZ2 structures under the influence of strain and an external electric field. Our research findings indicate the dynamic and thermodynamic stability of Janus SZrAZ2 (A = Si, Ge; Z = P, As) monolayers. In the equilibrium state, these monolayers exhibit properties of an indirect band gap semiconductor. When subjected to biaxial strain and an external electric field, we observed that the dependency of SZrSiAs2 and SZrGeAs2 monolayers on an external electric field is very weak. Their electronic properties can only be modulated by applying biaxial strain. For SZrSiP2 and SZrGeP2 monolayers, their electronic properties can be modulated under biaxial strain and an external electric field, resulting in a transition from semiconducting to metallic behavior. Finally, we calculated the carrier mobility of these four structures and observed that the SZrGeAs2 monolayer exhibits a hole mobility of up to 597.52 cm2 s-1 V-1 in the x-direction, whereas the SZrSiP2 monolayer demonstrates an electron mobility of up to 479.30 cm2 s-1 V-1 in the y-direction. In the x-direction, the electron mobility of SZrSiAs2 and SZrGeP2 monolayers was measured to be 189.88 and 528.44 cm2 s-1 V-1, respectively. These values are greater than or equivalent to that of experimentally synthesized MoS2 (∼200 cm2 s-1 V-1). Our research lays the foundation for utilizing two-dimensional Janus materials in electronic devices.
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Affiliation(s)
- Zhen Gao
- Department of Physics, Yunnan University, Kunming 650091, People's Republic of China.
| | - Yao He
- Department of Physics, Yunnan University, Kunming 650091, People's Republic of China.
| | - Kai Xiong
- Materials Genome Institute, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China.
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39
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Yin Y, Gong Q, Yi M, Guo W. Monolayer polar metals with large piezoelectricity derived from MoSi 2N 4. MATERIALS HORIZONS 2023; 10:5177-5184. [PMID: 37718912 DOI: 10.1039/d3mh00743j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/19/2023]
Abstract
The advancement of two-dimensional polar metals tends to be limited by the incompatibility between electric polarity and metallicity as well as dimension reduction. Here, we report polar and metallic Janus monolayers of the MoSi2N4 family by breaking the out-of-plane structural symmetry through Z (P/As) substitution of N. Despite the semiconducting nature of MoSi2X4 (X = N/P/As), four Janus MoSi2NxZ4-x monolayers are found to be polar metals owing to the weak coupling between the conducting electrons and electric polarity. The metallicity is originated from the Z substitution induced delocalization of occupied electrons in Mo-d orbitals. The out-of-plane electric polarizations around 1.5-15.7 pC m-1 are determined by the asymmetric out-of-plane charge distribution due to the non-centrosymmetric Janus structure. The corresponding out-of-plane piezoelectricity is further revealed as high as 18.7-73.3 pC m-1 and 0.05-0.25 pm V-1 for the piezoelectric strain and stress coefficients, respectively. The results demonstrate polar metallicity and high out-of-plane piezoelectricity in Janus MoSi2NxZ4-x monolayers and open new vistas for exploiting unusual coexisting properties in monolayers derived from the MoSi2N4 family.
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Affiliation(s)
- Yan Yin
- State Key Laboratory of Mechanics and Control for Aerospace Structures & Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education & Institute for Frontier Science & College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing 210016, China.
| | - Qihua Gong
- State Key Laboratory of Mechanics and Control for Aerospace Structures & Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education & Institute for Frontier Science & College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing 210016, China.
- MIIT Key Laboratory of Aerospace Information Materials and Physics & College of Physics, Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing 211106, China
| | - Min Yi
- State Key Laboratory of Mechanics and Control for Aerospace Structures & Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education & Institute for Frontier Science & College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing 210016, China.
| | - Wanlin Guo
- State Key Laboratory of Mechanics and Control for Aerospace Structures & Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education & Institute for Frontier Science & College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing 210016, China.
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40
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Qi Y, Yao C, Zhao J, Zeng H. First principles study of BAs/MoSi 2N 4 van der Waals heterostructure: tunable electronic and optical properties via vertical strain. Phys Chem Chem Phys 2023; 25:28104-28112. [PMID: 37818606 DOI: 10.1039/d3cp03112h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/12/2023]
Abstract
Constructing van der Waals heterostructures from layered materials can form new optoelectronic devices with superior performance to the individual monolayers. Here, we use first-principles calculations to explore the modulation of a two-dimensional BAs/MoSi2N4 van der Waals heterostructure via strain, including the structure stabilities, electronic properties, charge transfer, and optical properties. Our calculated results reveal that the BAs/MoSi2N4 heterostructure has a direct bandgap of 0.72 eV and type-I band alignment. In addition, the BAs/MoSi2N4 heterostructure exhibits enhanced light absorption in the visible light region. The electronic properties of the BAs/MoSi2N4 heterostructure are tunable by vertical strain, exhibiting a direct to indirect bandgap transition as well as a type-I to type-II band alignment transition when the vertical distance is reduced. Our research provides a comprehensive understanding of the electronic and optical properties of the BAs/MoSi2N4 heterostructure and could be helpful for their potential applications in optoelectronic devices.
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Affiliation(s)
- Yunxi Qi
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, China.
| | - Can Yao
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, China.
| | - Jun Zhao
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, China.
| | - Hui Zeng
- School of Microelectronics, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, China.
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41
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Tang L, Zou J. p-Type Two-Dimensional Semiconductors: From Materials Preparation to Electronic Applications. NANO-MICRO LETTERS 2023; 15:230. [PMID: 37848621 PMCID: PMC10582003 DOI: 10.1007/s40820-023-01211-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2023] [Accepted: 09/04/2023] [Indexed: 10/19/2023]
Abstract
Two-dimensional (2D) materials are regarded as promising candidates in many applications, including electronics and optoelectronics, because of their superior properties, including atomic-level thickness, tunable bandgaps, large specific surface area, and high carrier mobility. In order to bring 2D materials from the laboratory to industrialized applications, materials preparation is the first prerequisite. Compared to the n-type analogs, the family of p-type 2D semiconductors is relatively small, which limits the broad integration of 2D semiconductors in practical applications such as complementary logic circuits. So far, many efforts have been made in the preparation of p-type 2D semiconductors. In this review, we overview recent progresses achieved in the preparation of p-type 2D semiconductors and highlight some promising methods to realize their controllable preparation by following both the top-down and bottom-up strategies. Then, we summarize some significant application of p-type 2D semiconductors in electronic and optoelectronic devices and their superiorities. In end, we conclude the challenges existed in this field and propose the potential opportunities in aspects from the discovery of novel p-type 2D semiconductors, their controlled mass preparation, compatible engineering with silicon production line, high-κ dielectric materials, to integration and applications of p-type 2D semiconductors and their heterostructures in electronic and optoelectronic devices. Overall, we believe that this review will guide the design of preparation systems to fulfill the controllable growth of p-type 2D semiconductors with high quality and thus lay the foundations for their potential application in electronics and optoelectronics.
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Affiliation(s)
- Lei Tang
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, People's Republic of China.
| | - Jingyun Zou
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, 215009, Jiangsu, People's Republic of China.
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42
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Chavda VP, Balar PC, Nalla LV, Bezbaruah R, Gogoi NR, Gajula SNR, Peng B, Meena AS, Conde J, Prasad R. Conjugated Nanoparticles for Solid Tumor Theranostics: Unraveling the Interplay of Known and Unknown Factors. ACS OMEGA 2023; 8:37654-37684. [PMID: 37867666 PMCID: PMC10586263 DOI: 10.1021/acsomega.3c05069] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Accepted: 09/19/2023] [Indexed: 10/24/2023]
Abstract
Cancer diagnoses have been increasing worldwide, and solid tumors are among the leading contributors to patient mortality, creating an enormous burden on the global healthcare system. Cancer is responsible for around 10.3 million deaths worldwide. Solid tumors are one of the most prevalent cancers observed in recent times. On the other hand, early diagnosis is a significant challenge that could save a person's life. Treatment with existing methods has pitfalls that limit the successful elimination of the disorder. Though nanoparticle-based imaging and therapeutics have shown a significant impact in healthcare, current methodologies for solid tumor treatment are insufficient. There are multiple complications associated with the diagnosis and management of solid tumors as well. Recently, surface-conjugated nanoparticles such as lipid nanoparticles, metallic nanoparticles, and quantum dots have shown positive results in solid tumor diagnostics and therapeutics in preclinical models. Other nanotheranostic material platforms such as plasmonic theranostics, magnetotheranostics, hybrid nanotheranostics, and graphene theranostics have also been explored. These nanoparticle theranostics ensure the appropriate targeting of tumors along with selective delivery of cargos (both imaging and therapeutic probes) without affecting the surrounding healthy tissues. Though they have multiple applications, nanoparticles still possess numerous limitations that need to be addressed in order to be fully utilized in the clinic. In this review, we outline the importance of materials and design strategies used to engineer nanoparticles in the treatment and diagnosis of solid tumors and how effectively each method overcomes the drawbacks of the current techniques. We also highlight the gaps in each material platform and how design considerations can address their limitations in future research directions.
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Affiliation(s)
- Vivek P. Chavda
- Department
of Pharmaceutics and Pharmaceutical Technology, L.M. College of Pharmacy, Ahmedabad 380001, India
| | - Pankti C. Balar
- Pharmacy
Section, L.M. College of Pharmacy, Ahmedabad 380001, India
| | - Lakshmi Vineela Nalla
- Department
of Pharmacy, Koneru Lakshmaiah Education
Foundation, Vaddeswaram, Andhra Pradesh 522302, India
| | - Rajashri Bezbaruah
- Department
of Pharmaceutical Sciences, Faculty of Science
and Engineering, Dibrugarh, 786004 Assam, India
| | - Niva Rani Gogoi
- Department
of Pharmaceutical Sciences, Faculty of Science
and Engineering, Dibrugarh, 786004 Assam, India
| | - Siva Nageswara Rao Gajula
- Department
of Pharmaceutical Analysis, GITAM School of Pharmacy, GITAM (Deemed to be University), Rushikonda, Visakhapatnam, Andhra Pradesh 530045, India
| | - Berney Peng
- Department
of Pathology and Laboratory Medicine, University
of California at Los Angeles, Los
Angeles, California 90095, United States
| | - Avtar S. Meena
- Department
of Biotechnology, All India Institute of
Medical Sciences (AIIMS), Ansari
Nagar, New Delhi 110029, India
| | - João Conde
- ToxOmics,
NOVA Medical School, Faculdade de Ciências Médicas,
NMS|FCM, Universidade Nova de Lisboa, Lisboa 1169-056, Portugal
| | - Rajendra Prasad
- School
of Biochemical Engineering, Indian Institute
of Technology (BHU), Varanasi 221005, India
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43
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Sun JL, Dong MM, Niu Y, Li ZL, Zhang GP, Wang CK, Fu XX. Regulating the electronic properties of the WGe 2N 4 monolayer by adsorption of 4d transition metal atoms towards spintronic devices. Phys Chem Chem Phys 2023; 25:26270-26277. [PMID: 37743842 DOI: 10.1039/d3cp02686h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/26/2023]
Abstract
We study the regulation of the electronic and spin transport properties of the WGe2N4 monolayer by adsorbing 4d transition metal atoms (Y-Cd) using density functional theory combined with non-equilibrium Green's function. It is found that the adsorption of transition metal atoms (except Pd, Ag and Cd atoms) can introduce a magnetic moment into the WGe2N4 monolayer. Among the transition metal atoms, the adsorption of Nb and Rh atoms transforms WGe2N4 from a semiconductor to a half-metal and a highly spin-polarized semiconductor, respectively. The half-metallic Nb-adsorbed WGe2N4 system is selected to investigate the spin transport properties, and a high magnetoresistance ratio of 107% is achieved. In both parallel and antiparallel magnetization configurations, the spin filtering efficiency reaches close to 100% in the whole bias range, and the antiparallel magnetization configuration exhibits a dual spin filtering effect with a rectification ratio of up to 104. Our study predicts that the adsorption of 4d transition metal heteroatoms is an effective method to regulate the electronic and magnetic properties of WGe2N4 towards high-performance spintronic devices.
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Affiliation(s)
- Jin-Lan Sun
- Shandong Key Laboratory of Medical Physics and Image Processing & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China.
| | - Mi-Mi Dong
- Shandong Key Laboratory of Medical Physics and Image Processing & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China.
| | - Yue Niu
- Shandong Key Laboratory of Medical Physics and Image Processing & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China.
| | - Zong-Liang Li
- Shandong Key Laboratory of Medical Physics and Image Processing & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China.
| | - Guang-Ping Zhang
- Shandong Key Laboratory of Medical Physics and Image Processing & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China.
| | - Chuan-Kui Wang
- Shandong Key Laboratory of Medical Physics and Image Processing & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China.
| | - Xiao-Xiao Fu
- Shandong Key Laboratory of Medical Physics and Image Processing & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China.
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44
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Xia J, Gu Y, Mai J, Hu T, Wang Q, Xie C, Wu Y, Wang X. Tuneable Schottky contact of MoSi2N4/ TaS2 van der Waals heterostructure. Heliyon 2023; 9:e20619. [PMID: 37867820 PMCID: PMC10589790 DOI: 10.1016/j.heliyon.2023.e20619] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/07/2023] [Revised: 10/02/2023] [Accepted: 10/02/2023] [Indexed: 10/24/2023] Open
Abstract
The two-dimensional M o S i 2 N 4 monolayer is an emerging semiconductor material that offers considerable promise due to its ultra-thin profile, tuneable mechanical properties, excellent optoelectronic properties and exceptional environmental stability. The van der Waals (vdW) heterostructure formed by stacking such two-dimensional monolayers has demonstrated superior performance across various domains. In this study, a vdW heterostructure combining the two-dimensional M o S i 2 N 4 and T a S 2 monolayers is examined using first-principles density functional theory. In its ground state, this van der Waals heterostructure establishes an ohmic contact with an exceptionally low potential barrier height. By modulating the vdW heterostructure with an applied electric field of -0.1 V/Å and under vertical stress, we discovered that M o S i 2 N 4 and T a S 2 can transition from an ohmic contact to a p-type Schottky with an ultra-low Schottky barrier height (SBH). Our observations may give valuable insights for designing reconfigurable, tuneable Schottky nano-devices with enhanced electronic and optical properties based on M o S i 2 N 4 / T a S 2 .
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Affiliation(s)
- Jinglin Xia
- Key Laboratory of Electronic Composites of Guizhou Province, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, Guizhou, People's Republic of China
| | - Yixiao Gu
- Key Laboratory of Electronic Composites of Guizhou Province, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, Guizhou, People's Republic of China
| | - Jun Mai
- Key Laboratory of Electronic Composites of Guizhou Province, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, Guizhou, People's Republic of China
| | - Tianyang Hu
- Key Laboratory of Electronic Composites of Guizhou Province, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, Guizhou, People's Republic of China
| | - Qikun Wang
- Key Laboratory of Electronic Composites of Guizhou Province, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, Guizhou, People's Republic of China
| | - Chao Xie
- Key Laboratory of Electronic Composites of Guizhou Province, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, Guizhou, People's Republic of China
| | - Yunkai Wu
- Key Laboratory of Electronic Composites of Guizhou Province, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, Guizhou, People's Republic of China
| | - Xu Wang
- Key Laboratory of Electronic Composites of Guizhou Province, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, Guizhou, People's Republic of China
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45
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Ma S, Jiang J, Zou L, Lin J, Lu N, Zhuo Z, Wu X, Li Q. Two-dimensional superhard silicon nitrides with widely tunable bandgap, high carrier mobility and hole-doping-induced robust magnetism. NANOSCALE 2023; 15:14912-14922. [PMID: 37655453 DOI: 10.1039/d3nr01466e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/02/2023]
Abstract
The search for new forms of the traditional bulk materials to enrich their interactions and properties is an attractive subject in two-dimensional (2D) materials. In this work, novel tetra-hexa-mixed coordinated 2D silicon nitrides (Si3N4) and their analogues are systematically investigated via density functional theory. The results show the global minimum 2D structure, Si3N4 (T-aa), is a highly chemically and thermally stable superhard semiconductor with a wide indirect bandgap (about 6.0 eV), which is widely adjustable under both biaxial strain and vertical electric field. It also possesses anisotropic high carrier mobility, up to 5490 cm2 V-1 s-1 at room temperature. Besides, its nitride analogues of group IVA (Si, Ge, Sn, and Pb) exhibit diverse electronic structures with regular bandgap distribution. Remarkably, some nitride analogues display linearly increasing robust magnetism with hole doping. The theoretical Curie temperatures of Si3N4 and Sn3N4 with hole doping (1h+ per unit cell) are 298 and 180 K, respectively. The Si3N4 (T-aa) and its analogues have a variety of excellent properties to be potentially applied in various fields, e.g., semiconductor electronics, spintronics, high-temperature structural materials, and superhard materials.
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Affiliation(s)
- Shengqian Ma
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Key Laboratory of Materials for Energy Conversion, and School of Chemistry and Materials Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China.
- School of Physics and Electronic Engineering, Taishan University, Taian, Shandong, 271000, China
| | - Jiaxin Jiang
- Anhui Province Key Laboratory of Optoelectric Materials Science and Technology, Key Laboratory of Functional Molecular Solids, Ministry of Education, and Department of Physics, Anhui Normal University, Wuhu, Anhui, 241000, China.
| | - Lanlan Zou
- Anhui Province Key Laboratory of Optoelectric Materials Science and Technology, Key Laboratory of Functional Molecular Solids, Ministry of Education, and Department of Physics, Anhui Normal University, Wuhu, Anhui, 241000, China.
| | - Jiaqi Lin
- Anhui Province Key Laboratory of Optoelectric Materials Science and Technology, Key Laboratory of Functional Molecular Solids, Ministry of Education, and Department of Physics, Anhui Normal University, Wuhu, Anhui, 241000, China.
| | - Ning Lu
- Anhui Province Key Laboratory of Optoelectric Materials Science and Technology, Key Laboratory of Functional Molecular Solids, Ministry of Education, and Department of Physics, Anhui Normal University, Wuhu, Anhui, 241000, China.
| | - Zhiwen Zhuo
- Anhui Province Key Laboratory of Optoelectric Materials Science and Technology, Key Laboratory of Functional Molecular Solids, Ministry of Education, and Department of Physics, Anhui Normal University, Wuhu, Anhui, 241000, China.
| | - Xiaojun Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Key Laboratory of Materials for Energy Conversion, and School of Chemistry and Materials Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China.
| | - Qunxiang Li
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Key Laboratory of Materials for Energy Conversion, and School of Chemistry and Materials Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China.
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46
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Gao J, Zhang W, Yan X, Zhang X, Wang S, Yang G. Metallic CrP 2 monolayer: potential applications in energy storage and conversion. Phys Chem Chem Phys 2023; 25:24705-24711. [PMID: 37668165 DOI: 10.1039/d3cp02917d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/06/2023]
Abstract
Phosphorus-rich compounds have emerged as a promising class of energy storage and conversion materials due to their interesting structures and electrochemical properties. Herein, we propose that a metallic CrP2 monolayer, isomorphic to 1H-phase MoS2, is a good prospect as an anode for K-ion batteries and a catalyst for hydrogen evolution through first-principles calculations. The CrP2 monolayer demonstrates not only a desirable high K storage capacity (940 mA h g-1) but also a low K-ion diffusion barrier (0.10 eV) and average open circuit voltage (0.40 V). On the other hand, its Gibbs free energy (0.02 eV)/active site density is superior/comparable to that of commercial Pt, resulting from the contribution of the lone pair electrons of the P atom. Its high structural stability and intrinsic metallicity can ensure high safety and performance during the cyclic process. These interesting properties make the CrP2 monolayer a promising multifunctional material for energy storage and conversion devices.
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Affiliation(s)
- Jiayu Gao
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China.
| | - Wenyuan Zhang
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China.
| | - Xu Yan
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China.
| | - Xiaohua Zhang
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China.
| | - Sheng Wang
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China.
| | - Guochun Yang
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China.
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Yu C, Gbadago DQ, Hyeong SK, Lee SK, Hwang S, Shin N. Optimized Substrate Orientations for Highly Uniform Metal Halide Perovskite Film Deposition. ACS APPLIED MATERIALS & INTERFACES 2023; 15:43822-43834. [PMID: 37672479 DOI: 10.1021/acsami.3c09109] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/08/2023]
Abstract
Uniform optoelectronic quality of metal halide perovskite (MHP) films is critical for scalable production in large-area applications, such as photovoltaics and displays. While vapor-based MHP film deposition is advantageous for this purpose, achieving film uniformity can be challenging due to uneven temperature distribution and precursor concentration over the substrate. Here, we propose optimized substrate orientations for the vapor-based fabrication of homogeneous MAPbI3 thin films, involving a PbI2 primary layer deposition and subsequent conversion using vaporized methylammonium iodide (MAI). Leveraging computational fluid dynamics (CFD) simulations, we confirm that vertical positioning during the PbI2 layer growth yields a uniform film with a narrow temperature distribution and minimal boundary layer thickness. However, during the subsequent conversion step, horizontal substrate positioning results in spatially more uniform MAPbI3 thickness and grain size compared to the vertical placement due to enhanced MAI intercalation. From this optimized substrate positioning, we observe substantial optical homogeneity across the substrate on a centimeter scale, along with uniform and enhanced optoelectronic device performance within photodetector arrays. Our results offer a potential path toward the scalable production of highly uniform perovskite films.
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Affiliation(s)
- Chaeeun Yu
- Program in Biomedical Science and Engineering, Inha University, Incheon 22212, Republic of Korea
- Program in Smart Digital Engineering, Inha University, Incheon 22212, Republic of Korea
| | - Dela Quarme Gbadago
- Program in Smart Digital Engineering, Inha University, Incheon 22212, Republic of Korea
- Department of Chemical Engineering, Inha University, Incheon 22212, Republic of Korea
| | - Seok-Ki Hyeong
- Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), Wanju-gun, Jeollabuk-do 55324, Republic of Korea
| | - Seoung-Ki Lee
- School of Materials Science and Engineering, Pusan National University, Busan 46241, Republic of Korea
| | - Sungwon Hwang
- Program in Smart Digital Engineering, Inha University, Incheon 22212, Republic of Korea
- Department of Chemical Engineering, Inha University, Incheon 22212, Republic of Korea
| | - Naechul Shin
- Program in Biomedical Science and Engineering, Inha University, Incheon 22212, Republic of Korea
- Program in Smart Digital Engineering, Inha University, Incheon 22212, Republic of Korea
- Department of Chemical Engineering, Inha University, Incheon 22212, Republic of Korea
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48
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Xu Y, Li D, Zeng Q, Sun H, Li P. Type-II 2D AgBr/SiH van der Waals heterostructures with tunable band edge positions and enhanced optical absorption coefficients for photocatalytic water splitting. RSC Adv 2023; 13:27676-27685. [PMID: 37731832 PMCID: PMC10507427 DOI: 10.1039/d3ra05079c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/27/2023] [Accepted: 09/11/2023] [Indexed: 09/22/2023] Open
Abstract
Utilizing two-dimensional (2D) heterostructures in photocatalysis can enhance optical ab-sorption and charge separation, thereby increasing solar energy conversion efficiency and tackling environmental issues. Density functional theory (DFT) was employed in this study to investigate the structural and optoelectronic properties of the AgBr/SiH van der Waals (vdW) heterostructures. All three configurations (A1, A2, and A3) were stable, with direct bandgaps of 1.83 eV, 0.99 eV, and 1.36 eV, respectively. The type-II band alignment in these structures enables electrons to be transferred from the SiH layer to the AgBr layer, and holes to move in the opposite direction. In the ultraviolet region, the optical absorption coefficients of the A1, A2, and A3 configurations are approximately 4.0 × 105 cm-1, significantly higher than that of an isolated AgBr monolayer (2.4 × 104 cm-1). In the visible light region, the A1 configuration has an absorption coefficient of 4 × 104 cm-1, higher than that of an isolated AgBr (2.2 × 104 cm-1). The band edges of the A1 configuration satisfy the redox potential for photocatalytic water splitting at pH 0-7. When the biaxial tensile strain is 5% for the A2 configuration and 2% for the A3 configuration, it can allow photocatalytic water splitting from half-reactions without strain to photocatalytic overall water splitting at pH 0-7. With a 5% biaxial tensile strain in the visible light region, the A1 and A3 configurations experience a rise in the maximum absorption coefficient of 5.7 × 104 cm-1 and 4.6 × 104 cm-1, respectively. The findings indicate that the AgBr/SiH vdW heterostructure configurations could be utilized in photocatalytic water-splitting processes with great potential.
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Affiliation(s)
- Yuehua Xu
- School of Microelectronics and Control Engineering, Changzhou University Changzhou 213164 Jiangsu China
| | - Dongze Li
- School of Microelectronics and Control Engineering, Changzhou University Changzhou 213164 Jiangsu China
| | - Qiang Zeng
- School of Microelectronics and Control Engineering, Changzhou University Changzhou 213164 Jiangsu China
| | - He Sun
- School of Microelectronics and Control Engineering, Changzhou University Changzhou 213164 Jiangsu China
| | - Pengfei Li
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences Hefei 230031 China
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Huang M, Jiang Y, Luo Z, Wang J, Ding Z, Guo X, Liu X, Wang Y. Transition metal doped WSi 2N 4monolayer for water splitting electrocatalysts: a first-principles study. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:485001. [PMID: 37665141 DOI: 10.1088/1361-648x/acf263] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2023] [Accepted: 08/21/2023] [Indexed: 09/05/2023]
Abstract
High-performance water splitting electrocatalysts are urgently needed in the face of the environmental degradation and energy crisis. The first principles method was used in this study to systematically examine the electronic characteristics of transition metal (Sc, Ti, V, Cr, Mn, Fe, and Ru) doped WSi2N4(TM@WSi2N4) and its potential as oxygen evolution reaction (OER) catalysts. Our study shows that the doping of TM atoms significantly improves the catalytic performance of TM@WSi2N4, especially Fe@WSi2N4shows a low overpotential (ηOER= 470 mV). Interestingly, we found that integrated-crystal orbital Hamilton population and d-band center can be used as descriptors to explain the high catalytic activity of Fe@WSi2N4. Subsequently, Fe@WSi2N4exhibits the best hydrogen evolution reaction (HER) activity with a universal overpotential of 47 mV on N1sites. According to our research, Fe@WSi2N4offers a promising substitute for precious metals as a catalyst for overall water splitting with low OER and HER overpotentials.
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Affiliation(s)
- Mengya Huang
- College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, People's Republic of China
- Key Laboratory of Micro-Nano-Electronics of Guizhou Province, Guiyang 550025, People's Republic of China
- College of Big Health, Guizhou Medical University, Guiyang 550025, People's Republic of China
| | - Yan Jiang
- College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, People's Republic of China
- Key Laboratory of Micro-Nano-Electronics of Guizhou Province, Guiyang 550025, People's Republic of China
| | - Zijiang Luo
- School of Information, Guizhou University of Finance and Economics, Guiyang 550025, People's Republic of China
| | - Jihong Wang
- College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, People's Republic of China
| | - Zhao Ding
- College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, People's Republic of China
- Power Semiconductor Device Reliability Research Center of the Ministry of Education, Guizhou University, Guiyang 550025, People's Republic of China
- Key Laboratory of Micro-Nano-Electronics of Guizhou Province, Guiyang 550025, People's Republic of China
| | - Xiang Guo
- College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, People's Republic of China
- Power Semiconductor Device Reliability Research Center of the Ministry of Education, Guizhou University, Guiyang 550025, People's Republic of China
- Key Laboratory of Micro-Nano-Electronics of Guizhou Province, Guiyang 550025, People's Republic of China
| | - Xuefei Liu
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, People's Republic of China
| | - Yi Wang
- College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, People's Republic of China
- Power Semiconductor Device Reliability Research Center of the Ministry of Education, Guizhou University, Guiyang 550025, People's Republic of China
- Key Laboratory of Micro-Nano-Electronics of Guizhou Province, Guiyang 550025, People's Republic of China
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50
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Zhang Y, Dong S, Murugan P, Zhu T, Qing C, Liu Z, Zhang W, Wang HE. Engineering electronic structures and optical properties of a MoSi 2N 4 monolayer via modulating surface hydrogen chemisorption. RSC Adv 2023; 13:26475-26483. [PMID: 37671350 PMCID: PMC10476555 DOI: 10.1039/d3ra04428a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/03/2023] [Accepted: 08/29/2023] [Indexed: 09/07/2023] Open
Abstract
Recently, a MoSi2N4 monolayer has been successfully synthesized by a delicately designed chemical vapor deposition (CVD) method. It exhibits promising (opto)electronic properties due to a relatively narrow bandgap (∼1.94 eV), high electron/hole mobility, and excellent thermal/chemical stability. Currently, much effort is being devoted to further improving its properties through engineering defects or constructing nanocomposites (e.g., van der Waals heterostructures). Herein, we report a theoretical investigation on hydrogenation as an alternative surface functionalization approach to effectively manipulate its electronic structures and optical properties. The calculation results suggested that chemisorption of H atoms on the top of N atoms on MoSi2N4 was energetically most favored. Upon H chemisorption, the band gap values gradually decreased from 1.89 eV (for intrinsic MoSi2N4) to 0 eV (for MoSi2N4-16H) and 0.25 eV (for MoSi2N4-32H), respectively. The results of optical properties studies revealed that a noticeable enhancement in light absorption intensity could be realized in the visible light range after the surface hydrogenation process. Specifically, full-hydrogenated MoSi2N4 (MoSi2N4-32H) manifested a higher absorption coefficient than that of semi-hydrogenated MoSi2N4 (MoSi2N4-16H) in the visible light range. This work can provide theoretical guidance for rational engineering of optical and optoelectronic properties of MoSi2N4 monolayer materials via surface hydrogenation towards emerging applications in electronics, optoelectronics, photocatalysis, etc.
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Affiliation(s)
- Yumei Zhang
- Yunnan Key Laboratory of Optoelectronic Information Technology, College of Physics and Electronic Information, Yunnan Normal University Kunming 650500 China
| | - Shunhong Dong
- Yunnan Key Laboratory of Optoelectronic Information Technology, College of Physics and Electronic Information, Yunnan Normal University Kunming 650500 China
| | - Pachaiyappan Murugan
- Yunnan Key Laboratory of Optoelectronic Information Technology, College of Physics and Electronic Information, Yunnan Normal University Kunming 650500 China
| | - Ting Zhu
- Yunnan Key Laboratory of Optoelectronic Information Technology, College of Physics and Electronic Information, Yunnan Normal University Kunming 650500 China
- Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials, Ministry of Education, Yunnan Normal University China
| | - Chen Qing
- Yunnan Key Laboratory of Optoelectronic Information Technology, College of Physics and Electronic Information, Yunnan Normal University Kunming 650500 China
| | - Zhiyong Liu
- Yunnan Key Laboratory of Optoelectronic Information Technology, College of Physics and Electronic Information, Yunnan Normal University Kunming 650500 China
- Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials, Ministry of Education, Yunnan Normal University China
| | - Weibin Zhang
- Yunnan Key Laboratory of Optoelectronic Information Technology, College of Physics and Electronic Information, Yunnan Normal University Kunming 650500 China
- Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials, Ministry of Education, Yunnan Normal University China
| | - Hong-En Wang
- Yunnan Key Laboratory of Optoelectronic Information Technology, College of Physics and Electronic Information, Yunnan Normal University Kunming 650500 China
- Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials, Ministry of Education, Yunnan Normal University China
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