Exploring the Thickness-Dependence of the Properties of Layered Gallium Sulfide

Phase Identification of Layered GaS by Polarization-Dependent Angle-Resolved Oblique Incident Second Harmonic Generation

Layered gallium sulfide (GaS), a material that has attracted much attention in the field of micro-nano optoelectronics recently, is predicted to have four stable stacking orders (β-, γ-, ε-, and δ-GaS) with close formation energies; β-GaS is the most considered, and other phases are seldom discussed. However, considering the ease of the phase transition in few-layer materials, the lack of accurate crystal phase identification prevents a full understanding of this material for specific applications requiring other crystal phases. Here, we report a novel in situ and nondestructive method to identify the phase of layered GaS by polarization-dependent angle-resolved oblique incident second harmonic generation (SHG). Through this method, we discovered the presence of γ-GaS with a portion of approximately one-sixth of the total samples. Our work has laid a foundation for the application of GaS, and our approach has established a technical guarantee for structural analysis of van der Waals layered materials.

Impact of passivation on GaS nanoflakes: A study on stability, electronic, spectroscopy, and photocatalytic properties

This study uses first-principle calculations to investigate the properties of pristine and passivated gallium sulfide nanoflakes. Passivation significantly enhances stability, with fluorinated nanoflakes being the most stable and pristine nanoflakes the least stable, having formation energies of -0.058 eV/atom and -0.009 eV/atom, respectively. The pristine and passivated nanoflakes show semiconducting band gap, which lies in a visible region. Hydrogenated nanoflakes exhibit the largest band gap of 3.62 eV, making them highly suitable for photocatalysis, while fluorine and chlorine passivation result in band gaps of 3.16 eV and 3.01 eV. Scanning tunneling microscopy reveals distinct topographical features for each passivated nanoflake, affecting their electronic properties, including negative differential conductance, making it suitable for advanced switching devices and sensors. The quantum capacitance value of 815 µF/cm2 for chlorinated nanoflakes suggests that passivated nanoflakes could be beneficial for supercapacitor applications. Spectroscopic studies show that passivation changes the infrared spectrum and moves absorption spectra from the ultraviolet to the visible range. The hydrogenated nanoflakes are found ideal for water splitting, and adjusting the pH can further optimize its photocatalytic performance. These findings highlight the potential of passivated nanoflakes in photovoltaics, biomedical imaging, photocatalysis, and advanced technological devices.

Out-of-Plane Longitudinal Sound Speed Determination in GaS by Broadband Time-Domain Brillouin Scattering

Two-dimensional semiconducting gallium sulfide (GaS) has garnered notable interest for its distinct structural and optical properties, which position it as a promising candidate material for various applications ranging from photodetection and photovoltaics to nonlinear frequency conversion. In this work, we determined the out-of-plane longitudinal sound velocity, , via impulsive time-domain femtosecond broadband Brillouin scattering measurements performed on a single flake-like GaS crystal. We obtained a value (3140 ± 20) m/s, which yields an out-of-plane compressive elastic constant, C 33= (38.1 ± 0.5) GPa.

Synthesis of 2D Gallium Sulfide with Ultraviolet Emission by MOCVD

Two-dimensional (2D) materials exhibit the potential to transform semiconductor technology. Their rich compositional and stacking varieties allow tailoring materials' properties toward device applications. Monolayer to multilayer gallium sulfide (GaS) with its ultraviolet band gap, which can be tuned by varying the layer number, holds promise for solar-blind photodiodes and light-emitting diodes as applications. However, achieving commercial viability requires wafer-scale integration, contrasting with established, limited methods such as mechanical exfoliation. Here the one-step synthesis of 2D GaS is introduced via metal-organic chemical vapor deposition on sapphire substrates. The pulsed-mode deposition of industry-standard precursors promotes 2D growth by inhibiting the vapor phase and on-surface pre-reactions. The interface chemistry with the growth of a Ga adlayer that results in an epitaxial relationship is revealed. Probing structure and composition validate thin-film quality and 2D nature with the possibility to control the thickness by the number of GaS pulses. The results highlight the adaptability of established growth facilities for producing atomically thin to multilayered 2D semiconductor materials, paving the way for practical applications.

Exploring the properties of Zr2CO2/GaS van der Waals heterostructures for optoelectronic applications

We investigate the structural, electronic, and optical properties of eight possible Zr2CO2/GaS van der Waals (vdW) heterostructures using first-principles calculations based on a hybrid functional. These structures display favorable stability, indicated by matching crystal structures and negative formation energies. In all considered configurations, these heterostructures act as indirect band gap semiconductors with a type-II band alignment, allowing efficient electron-hole separation. Optical studies reveal their suitability for optoelectronic applications. Zr2CO2/GaS under 4% biaxial compressive strain meets the criteria for photocatalytic water splitting, suggesting their potential for electronic and optoelectronic devices in the visible spectrum. Our findings present prospects for advanced photocatalytic materials and optical devices.

Excitonic and Environmental Screening Effects in Two-Dimensional Janus MSO (M = Ga, In)

In this work, we investigate Janus monolayer MSO (M = Ga, In) systems using the state-of-the-art GW method within the framework of the many-body perturbation theory. Ground-state density functional theory calculations reveal that both the substitution of S atoms with O atoms and the chemisorption of the O atoms on a single side of the MS layer narrow the band gaps and reduce the carrier mobilities. Notably, one-shot GW calculations demonstrate that the GaSO-2 and InSO-1 systems exhibit optimal band gaps for visible light absorption. Based on the Bethe-Salpeter equation, the exciton binding energies of isolated Janus monolayer GaSO-2 and InSO-1 systems are lower than those of their prototype GaS and InS by 0.37 and 0.17 eV, respectively. Further calculations show that the exciton binding energies of the Janus GaSO-2 and InSO-1 systems can be precisely tuned by adjusting their thicknesses and the thicknesses of their substrates. A deep understanding of the mechanisms for tuning the exciton binding energies in Janus GaSO-2 and InSO-1 systems is crucial for the future design of advanced photovoltaic devices.

Photoelectric Properties of GaS1-xSex (0 ≤ x ≤ 1) Layered Crystals

In this study, the photoelectric properties of a complete series of GaS1-xSex (0 ≤ x ≤ 1) layered crystals are investigated. The photoconductivity spectra indicate a decreasing bandgap of GaS1-xSex as the Se composition x increases. Time-resolved photocurrent measurements reveal a significant improvement in the response of GaS1-xSex to light with increasing x. Frequency-dependent photocurrent measurements demonstrate that both pure GaS crystals and GaS1-xSex ternary alloy crystals exhibit a rapid decrease in photocurrents with increasing illumination frequency. Crystals with lower x exhibit a faster decrease in photocurrent. However, pure GaSe crystal maintains its photocurrent significantly even at high frequencies. Measurements for laser-power-dependent photoresponsivity and bias-voltage-dependent photoresponsivity also indicate an increase in the photoresponsivity of GaS1-xSex as x increases. Overall, the photoresponsive performance of GaS1-xSex is enhanced with increasing x, and pure GaSe exhibits the best performance. This result contradicts the findings of previous reports. Additionally, the inverse trends between bandgap and photoresponsivity with increasing x suggest that GaS1-xSex-based photodetectors could potentially offer a high response and wavelength-selectivity for UV and visible light detection. Thus, this work provides novel insights into the photoelectric characteristics of GaS1-xSex layered crystals and highlights their potential for optoelectronic applications.

Optical Second Harmonic Generation of Low-Dimensional Semiconductor Materials

In recent years, the phenomenon of optical second harmonic generation (SHG) has attracted significant attention as a pivotal nonlinear optical effect in research. Notably, in low-dimensional materials (LDMs), SHG detection has become an instrumental tool for elucidating nonlinear optical properties due to their pronounced second-order susceptibility and distinct electronic structure. This review offers an exhaustive overview of the generation process and experimental configurations for SHG in such materials. It underscores the latest advancements in harnessing SHG as a sensitive probe for investigating the nonlinear optical attributes of these materials, with a particular focus on its pivotal role in unveiling electronic structures, bandgap characteristics, and crystal symmetry. By analyzing SHG signals, researchers can glean invaluable insights into the microscopic properties of these materials. Furthermore, this paper delves into the applications of optical SHG in imaging and time-resolved experiments. Finally, future directions and challenges toward the improvement in the NLO in LDMs are discussed to provide an outlook in this rapidly developing field, offering crucial perspectives for the design and optimization of pertinent devices.

Stability of Nanometer-Thick Layered Gallium Chalcogenides and Improvements via Hydrogen Passivation

The gallium monochalcogenides family, comprising gallium sulfide (GaS), gallium selenide (GaSe), and gallium telluride (GaTe), is capturing attention for its applications in energy storage and production, catalysis, photonics, and optoelectronics. This interest originates from their properties, which include an optical bandgap larger than those of most common transition metal dichalcogenides, efficient light absorption, and significant carrier mobility. For any application, stability to air exposure is a fundamental requirement. Here, we perform a comparative study of the stability of layered GaS, GaSe, and GaTe nanometer-thick films down to a few layers with the goal of identifying the most suitable Ga chalcogenide for future integration in photonic and optoelectronic devices. Our study unveils a trend of decreasing air stability from sulfide to selenide and finally to telluride. Furthermore, we demonstrate a hydrogen passivation process to prevent the oxidation of GaSe with a higher feasibility and durability than other state-of-the-art passivation methods proposed in the literature.

Stability of mechanically exfoliated layered monochalcogenides under ambient conditions

Monochalcogenides of groups III (GaS, GaSe) and VI (GeS, GeSe, SnS, and SnSe) are materials with interesting thickness-dependent characteristics, which have been applied in many areas. However, the stability of layered monochalcogenides (LMs) is a real problem in semiconductor devices that contain these materials. Therefore, it is an important issue that needs to be explored. This article presents a comprehensive study of the degradation mechanism in mechanically exfoliated monochalcogenides in ambient conditions using Raman and photoluminescence spectroscopy supported by structural methods. A higher stability (up to three weeks) was observed for GaS. The most reactive were Se-containing monochalcogenides. Surface protrusions appeared after the ambient exposure of GeSe was detected by scanning electron microscopy. In addition, the degradation of GeS and GeSe flakes was observed in the operando experiment in transmission electron microscopy. Additionally, the amorphization of the material progressed from the flake edges. The reported results and conclusions on the degradation of LMs are useful to understand surface oxidation, air stability, and to fabricate stable devices with monochalcogenides. The results indicate that LMs are more challenging for exfoliation and optical studies than transition metal dichalcogenides such as MoS2, MoSe2, WS2, or WSe2.

2D Gallium Sulfide-Based 1D Photonic Crystal Biosensor for Glucose Concentration Detection

Unidimensional photonic crystal-based biosensors have gained much attention in the area of blood glucose measurement. In this paper, we propose two novel designs based on two-dimensional (2D) Van der Waals materials. The first 1D photonic crystal design consists of multilayers of 2D gallium sulfide and 2D muscovite mica [GaS/Mica]^ND[GaS/Mica]^N, and the second design consists of multilayers of 2D gallium sulfide [GaS/G]^ND[GaS/G]^N. We conducted a numerical analysis using the transfer matrix method to investigate the properties of photonic crystals, both with and without defect layers, in order to assess their suitability for biosensing applications. The biosensors' performances were investigated as a function of glucose concentration, revealing a high sensitivity of 832 nm/RIU, a notable figure-of-merit of 1.46 × 10⁵ RIU^-1, a Q-factor exceeding 10⁵, and a minimum limit of detection of 3.4 × 10^-7 RIU. Finally, we modified the [GaS/G]^ND[GaS/G]^Nstructure in order to enhance the sensitivity nearly 5-fold. The proposed biosensors offer the advantage of being label-free, making them promising platforms for the sensitive and reliable detection of blood glucose levels.

Nonlinear Optical Activities in Two-Dimensional Gallium Sulfide: A Comprehensive Study

The nonlinear optical (NLO) properties of two-dimensional (2D) materials are fascinating for fundamental physics and optoelectronic device development. However, relatively few investigations have been conducted to establish the combined NLO activities of a 2D material. Herein, a study of numerous NLO properties of 2D gallium sulfide (GaS), including second-harmonic generation (SHG), two-photon excited fluorescence (TPEF), and NLO absorption are presented. The layer-dependent SHG response of 2D GaS identifies the noncentrosymmetric nature of the odd layers, and the second-order susceptibility (χ²) value of 47.98 pm/V (three-layers of GaS) indicates the superior efficiency of the SHG signal. In addition, structural deformation induces the symmetry breaking and facilitates the SHG in the bulk samples, whereas a possible efficient symmetry breaking in the liquid-phase exfoliated samples results in an enhancement of the SHG signal, providing prospective fields of investigation for researchers. The generation of TPEF from 800 to 860 nm depicts the two-photon absorption characteristics of 2D GaS material. Moreover, the saturable absorption characteristics of 2D GaS are realized from the largest nonlinear absorption coefficient (β) of -9.3 × 10³, -91.0 × 10³, and -6.05 × 10³ cm/GW and giant modulation depths (T_s) of 24.4%, 35.3%, and 29.1% at three different wavelengths of 800, 1066, and 1560 nm, respectively. Hence, such NLO activities indicate that 2D GaS material can facilitate in the technical advancements of future nonlinear optoelectronic devices.

Interplay between Thickness, Defects, Optical Properties, and Photoconductivity at the Centimeter Scale in Layered GaS

From the group-III monochalcogenide (MX, M  =  Ga, In; X  =  S, Se, Te) layered semiconductors, gallium monosulfide, GaS, has emerged as a promising material for electronics, optoelectronics, and catalysis applications. In this work, GaS samples of various thicknesses in the range from 38 to 1665 nm have been obtained by mechanical exfoliation to study the interplay between structural, morphological, optical, and photoresponsivity properties as a function of thickness. This interplay has been established by analyzing the structure through Raman spectroscopy and X-ray diffraction, the morphology through scanning electron microscopy and atomic force microscopy, the density and optical properties through spectroscopic ellipsometry, and the photoresponsivity through current–voltage measurements under UV light. This work shows that photoresponsivity increases with increases in GaS thickness, resulting in a UV photoresponsivity of 1.5·10⁻⁴ AW⁻¹ stable over several on/off cycles.