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Liu T, Guo R, Fu Y, Zhao J, Ning H, Fang Z, Liang Z, Wei X, Yao R, Peng J. Morphological Regulation of Printed Low-Temperature Conductive Ink. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2022; 38:9955-9966. [PMID: 35894171 DOI: 10.1021/acs.langmuir.2c01249] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The unbalanced evaporation of solvents in low-temperature sintered inks for printed electronics leads to a series of problems in the actual printing process, including printed pattern distortion, surface cracking, and the coffee ring effect, which has become a serious obstacle to this technique. Here, we present a comprehensive investigation of the influence of the solvent composition, environmental, and sintering conditions on the complicated pattern formation process of reactive silver inks. The results first showed that only inks with a certain wettability of solvents could form well-defined patterns. Then, the solvent composition and ambient humidity can be adjusted to balance the nonequilibrium evaporative flow within the liquid and thus to obtain a flat liquid film. Combined with the rapid UV sintering process, the particle size, porosity, and roughness could be controlled to produce dense and homogeneous silver films. Finally, we successfully printed silver electrodes with a smooth and dense surface (Rqs ∼ 21 nm in 0.8 × 0.8 mm2 area and less than 1% porosity) under an optimized relative humidity (RH) of 50-60% at room temperature with the solvent composition of IPA (isopropanol)/2,3-BD (2,3-butanediol) = 8:2. In addition, we also demonstrated high-performance Pr-IZO (praseodymium-doped indium-zinc oxide) thin film transistors (TFTs) with a mobility (μsat) of 2.14 cm2/V/s and Ion/Ioff ratio of over 107 using source-drain electrodes printed under optimized conditions.
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Affiliation(s)
- Taijiang Liu
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
| | - Runpeng Guo
- Adlai E. Stevenson High School, Lincolnshire, Illinois 60069, United States
| | - Yubin Fu
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
| | - Jie Zhao
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
| | - Honglong Ning
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
| | - Zhiqiang Fang
- State Key Laboratory of Pulp and Paper Engineering, South China University of Technology, Guangzhou 510640, China
| | - Zhihao Liang
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
| | - Xiaoqin Wei
- Southwest Institute of Technology and Engineering, Chongqing 400039, China
| | - Rihui Yao
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
| | - Junbiao Peng
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
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Liang H, Yao R, Zhang G, Zhang X, Liang Z, Yang Y, Ning H, Zhong J, Qiu T, Peng J. A Strategy toward Realizing Narrow Line with High Electrical Conductivity by Electrohydrodynamic Printing. MEMBRANES 2022; 12:membranes12020141. [PMID: 35207062 PMCID: PMC8879046 DOI: 10.3390/membranes12020141] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/20/2021] [Revised: 01/13/2022] [Accepted: 01/17/2022] [Indexed: 02/04/2023]
Abstract
Over the past few decades, electrohydrodynamic (EHD) printing has proved to be an environmentally friendly, cost-effective and powerful tool in manufacturing electronic devices with a wire width of less than 50 μm. In particular, EHD printing is highly valued for the printing of ultrafine wire-width silver electrodes, which is important in manufacturing large-area, high-resolution micron-scale or even nanoscale structures. In this paper, we compare two methods of surface modification of glass substrate: UV treatment and oxygen plasma treatment. We found that oxygen plasma was better than UV treatment in terms of wettability and uniformity. Secondly, we optimized the annealing temperature parameter, and found that the conductivity of the electrode was the highest at 200 °C due to the smoothing silver electrode and the oxidation-free internal microstructure. Thirdly, we used EHD printing to fabricate silver electrodes on the glass substrate. Due to the decrease of conductivity as a result of the skin effect and the decrease of silver content, we found that driving voltage dropped, line width decreased, and the conductivity of silver line decreased. After the optimization of the EHD printing process, Ag electrode line width and conductivity reached 19.42 ± 0.24 μm and 6.01 × 106 S/m, demonstrating the potential of electro-hydraulic printing in the manufacturing of flexible, wearable, high-density, low-power-consumption electronics.
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Affiliation(s)
- Hongfu Liang
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China; (H.L.); (R.Y.); (G.Z.); (X.Z.); (Z.L.); (Y.Y.); (J.Z.); (J.P.)
| | - Rihui Yao
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China; (H.L.); (R.Y.); (G.Z.); (X.Z.); (Z.L.); (Y.Y.); (J.Z.); (J.P.)
| | - Guanguang Zhang
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China; (H.L.); (R.Y.); (G.Z.); (X.Z.); (Z.L.); (Y.Y.); (J.Z.); (J.P.)
| | - Xu Zhang
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China; (H.L.); (R.Y.); (G.Z.); (X.Z.); (Z.L.); (Y.Y.); (J.Z.); (J.P.)
| | - Zhihao Liang
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China; (H.L.); (R.Y.); (G.Z.); (X.Z.); (Z.L.); (Y.Y.); (J.Z.); (J.P.)
| | - Yuexin Yang
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China; (H.L.); (R.Y.); (G.Z.); (X.Z.); (Z.L.); (Y.Y.); (J.Z.); (J.P.)
| | - Honglong Ning
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China; (H.L.); (R.Y.); (G.Z.); (X.Z.); (Z.L.); (Y.Y.); (J.Z.); (J.P.)
- Correspondence: (H.N.); (T.Q.); Tel.: +86-20-8711-4525 (H.N.)
| | - Jinyao Zhong
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China; (H.L.); (R.Y.); (G.Z.); (X.Z.); (Z.L.); (Y.Y.); (J.Z.); (J.P.)
| | - Tian Qiu
- Department of Intelligent Manufacturing, Wuyi University, Jiangmen 529020, China
- Correspondence: (H.N.); (T.Q.); Tel.: +86-20-8711-4525 (H.N.)
| | - Junbiao Peng
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China; (H.L.); (R.Y.); (G.Z.); (X.Z.); (Z.L.); (Y.Y.); (J.Z.); (J.P.)
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3
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Xiao P, Zhou Y, Gan L, Pan Z, Chen J, Luo D, Yao R, Chen J, Liang H, Ning H. Study of Inkjet-Printed Silver Films Based on Nanoparticles and Metal-Organic Decomposition Inks with Different Curing Methods. MICROMACHINES 2020; 11:mi11070677. [PMID: 32664692 PMCID: PMC7407937 DOI: 10.3390/mi11070677] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/23/2020] [Revised: 07/11/2020] [Accepted: 07/11/2020] [Indexed: 12/04/2022]
Abstract
Currently, inkjet printing conductive films have attracted more and more attention in the field of electronic device. Here, the inkjet-printed silver thin films based on nanoparticles (NP) ink and metal-organic decomposition (MOD) ink were cured by the UV curing method and heat curing method. We not only compared the electrical resistivity and adhesion strength of two types of silver films, but also studied the effect of different curing methods on silver films. The silver films based on NP ink had good adhesion strength with a lowest electrical resistivity of 3.7 × 10−8 Ω·m. However, the silver film based on MOD ink had terrible adhesion strength with a lowest electrical resistivity of 2 × 10−8 Ω·m. Furthermore, we found a simple way to improve the terrible adhesion strength of silver films based on MOD ink and tried to figure out the mechanisms. This work offers a further understanding of the different performances of two types of silver films with different curing methods.
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Affiliation(s)
- Peng Xiao
- School of Physics and Optoelectronic Engineering, Foshan University, Foshan 528000, China; (P.X.); (J.C.)
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China; (Y.Z.); (J.C.); (H.L.); (H.N.)
| | - Yicong Zhou
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China; (Y.Z.); (J.C.); (H.L.); (H.N.)
| | - Liao Gan
- Air Force Representative Office in Zunyi District, Zunyi 563000, China;
| | - Zhipeng Pan
- Guizhou Meiling Power Supply Co., Ltd., Zunyi 563000, China;
| | - Jianwen Chen
- School of Physics and Optoelectronic Engineering, Foshan University, Foshan 528000, China; (P.X.); (J.C.)
| | - Dongxiang Luo
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China
- Correspondence: (D.L.); (R.Y.)
| | - Rihui Yao
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China; (Y.Z.); (J.C.); (H.L.); (H.N.)
- Guangdong Province Key Lab of Display Material and Technology, Sun Yat-sen University, Guangzhou 510275, China
- Correspondence: (D.L.); (R.Y.)
| | - Jianqiu Chen
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China; (Y.Z.); (J.C.); (H.L.); (H.N.)
| | - Hongfu Liang
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China; (Y.Z.); (J.C.); (H.L.); (H.N.)
| | - Honglong Ning
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China; (Y.Z.); (J.C.); (H.L.); (H.N.)
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Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure. MATERIALS 2019; 12:ma12213639. [PMID: 31694214 PMCID: PMC6862527 DOI: 10.3390/ma12213639] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/27/2019] [Revised: 10/31/2019] [Accepted: 11/04/2019] [Indexed: 01/13/2023]
Abstract
Highly transparent zinc oxide (ZnO)-based thin-film transistors (TFTs) with gold nanoparticles (AuNPs) capable of detecting visible light were fabricated through spray pyrolysis on a fluorine-doped tin oxide substrate. The spray-deposited channel layer of ZnO had a thickness of approximately 15 nm, and the thickness exhibited a linear increase with an increasing number of sprays. Furthermore, the ZnO thin-film exhibited a markedly smoother channel layer with a significantly lower surface roughness of 1.84 nm when the substrate was 20 cm from the spray nozzle compared with when it was 10 cm away. Finally, a ZnO and Au-NP heterojunction nanohybrid structure using plasmonic energy detection as an electrical signal, constitutes an ideal combination for a visible-light photodetector. The ZnO-based TFTs convert localized surface plasmon energy into an electrical signal, thereby extending the wide band-gap of materials used for photodetectors to achieve visible-light wavelength detection. The photo-transistors demonstrate an elevated on-current with an increase of the AuNP density in the concentration of 1.26, 12.6, and 126 pM and reach values of 3.75, 5.18, and 9.79 × 10−7 A with applied gate and drain voltages. Moreover, the threshold voltage (Vth) also drifts to negative values as the AuNP density increases.
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Chen J, Gan L, Pan Z, Ning H, Fang Z, Liang H, Tao R, Cai W, Yao R, Peng J. A Strategy toward Realizing Ultrashort Channels and Microstructures Array by Piezoelectric Inkjet Printing. NANOMATERIALS 2019; 9:nano9111515. [PMID: 31653004 PMCID: PMC6915631 DOI: 10.3390/nano9111515] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/07/2019] [Revised: 10/17/2019] [Accepted: 10/22/2019] [Indexed: 12/04/2022]
Abstract
Inkjet printing has been proved to be a powerful tool in the cost-effective ambient deposition of functional materials for the fabrication of electronic devices in the past decades. However, restricted by equipment and inks, the feature size of printed dots or lines with conventional inkjet printing is usually limited to several tens of micrometers, which could not fit the requirements for the fabrication of large-area, high-resolution microscale, even nanoscale, structures. Therefore, various technical means were developed for breaking the equipment limits. Here, we report a strategy for realizing ultrashort channels and homogeneous microstructures arrays by a conventional piezoelectric inkjet printing technique without any additional pre-mask process on the substrate. This strategy extends application of piezoelectric inkjet printing technique to biological and technological areas.
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Affiliation(s)
- Jianqiu Chen
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China.
| | - Liao Gan
- Air Force Representative Office in Zunyi District, Zunyi City 563000, China.
| | - Zhipeng Pan
- Guizhou Meiling Power Supply Co., Ltd., Zunyi City 563000, China.
| | - Honglong Ning
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China.
| | - Zhiqiang Fang
- State Key Laboratory of Pulp and Paper Engineering, South China University of Technology, Guangzhou 510640, China.
| | - Hongfu Liang
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China.
| | - Ruiqiang Tao
- South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
| | - Wei Cai
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China.
| | - Rihui Yao
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China.
- Guangdong Province Key Lab of Display Material and Technology, Sun Yat-sen University, Guangzhou 510275, China.
| | - Junbiao Peng
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China.
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Mo L, Guo Z, Yang L, Zhang Q, Fang Y, Xin Z, Chen Z, Hu K, Han L, Li L. Silver Nanoparticles Based Ink with Moderate Sintering in Flexible and Printed Electronics. Int J Mol Sci 2019; 20:E2124. [PMID: 31036787 PMCID: PMC6539082 DOI: 10.3390/ijms20092124] [Citation(s) in RCA: 29] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/09/2019] [Revised: 03/27/2019] [Accepted: 04/07/2019] [Indexed: 12/28/2022] Open
Abstract
Printed electronics on flexible substrates has attracted tremendous research interest research thanks its low cost, large area production capability and environmentally friendly advantages. Optimal characteristics of silver nanoparticles (Ag NPs) based inks are crucial for ink rheology, printing, post-print treatment, and performance of the printed electronics devices. In this review, the methods and mechanisms for obtaining Ag NPs based inks that are highly conductive under moderate sintering conditions are summarized. These characteristics are particularly important when printed on temperature sensitive substrates that cannot withstand sintering of high temperature. Strategies to tailor the protective agents capping on the surface of Ag NPs, in order to optimize the sizes and shapes of Ag NPs as well as to modify the substrate surface, are presented. Different (emerging) sintering technologies are also discussed, including photonic sintering, electrical sintering, plasma sintering, microwave sintering, etc. Finally, applications of the Ag NPs based ink in transparent conductive film (TCF), thin film transistor (TFT), biosensor, radio frequency identification (RFID) antenna, stretchable electronics and their perspectives on flexible and printed electronics are presented.
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Affiliation(s)
- Lixin Mo
- Beijing Engineering Research Center of Printed Electronics, Beijing Institute of Graphic Communication, Beijing 102600, China.
| | - Zhenxin Guo
- Beijing Engineering Research Center of Printed Electronics, Beijing Institute of Graphic Communication, Beijing 102600, China.
| | - Li Yang
- Research Institutes of Sweden (RISE), RISE Bioeconomy, Drottning Kristinas väg 61, 11428 Stockholm, Sweden.
| | - Qingqing Zhang
- Beijing Engineering Research Center of Printed Electronics, Beijing Institute of Graphic Communication, Beijing 102600, China.
| | - Yi Fang
- Beijing Engineering Research Center of Printed Electronics, Beijing Institute of Graphic Communication, Beijing 102600, China.
| | - Zhiqing Xin
- Beijing Engineering Research Center of Printed Electronics, Beijing Institute of Graphic Communication, Beijing 102600, China.
| | - Zheng Chen
- Shine Optoelectronics (Kunshan) Co., Ltd., Shenzhou Industrial Park, No. 33 Yuanfeng Rd, Kunshan 215300, China.
| | - Kun Hu
- Beijing Engineering Research Center of Printed Electronics, Beijing Institute of Graphic Communication, Beijing 102600, China.
| | - Lu Han
- Beijing Engineering Research Center of Printed Electronics, Beijing Institute of Graphic Communication, Beijing 102600, China.
| | - Luhai Li
- Beijing Engineering Research Center of Printed Electronics, Beijing Institute of Graphic Communication, Beijing 102600, China.
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Cai W, Ning H, Zhu Z, Wei J, Zhou S, Yao R, Fang Z, Huang X, Lu X, Peng J. Investigation of direct inkjet-printed versus spin-coated ZrO 2 for sputter IGZO thin film transistor. NANOSCALE RESEARCH LETTERS 2019; 14:80. [PMID: 30838466 PMCID: PMC6401082 DOI: 10.1186/s11671-019-2905-2] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/08/2018] [Accepted: 02/18/2019] [Indexed: 06/09/2023]
Abstract
In this work, a low leakage current ZrO2 was fabricated for sputter indium gallium zinc oxide (IGZO) thin-film transistor using direct inkjet-printing technology. Spin-coated and direct inkjet-printed ZrO2 were prepared to investigate the film formation process and electrical performance for different process. Homogeneous ZrO2 films were observed through the high-resolution TEM images. The chemical structure of ZrO2 films were investigated by XPS measurements. The inkjet-printed ZrO2 layer upon IGZO showed a superior performance on mobility and off state current, but a large Vth shift under positive bias stress. As a result, the TFT device based on inkjet-printed ZrO2 exhibited a saturation mobility of 12.4 cm2/Vs, an Ion/Ioff ratio of 106, a turn on voltage of 0 V and a 1.4-V Vth shift after 1-h PBS strain. Higher density films with less oxygen vacancy were responsible for low off state current for the printed ZrO2 device. The mechanism of deteriorated performance on PBS test can be ascribed to the In-rich region formed at the back channel which easily absorbs H2O and oxygen. The absorbed H2O and oxygen capture electrons under positive bias stress, serving as acceptors in TFT device. This work demonstrates the film formation process of direct inkjet-printed and spin-coated oxide films and reveals the potential of direct inkjet-printed oxide dielectric in high-performance oxide TFT device.
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Affiliation(s)
- Wei Cai
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640 China
| | - Honglong Ning
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640 China
| | - Zhennan Zhu
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640 China
| | - Jinglin Wei
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640 China
| | - Shangxiong Zhou
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640 China
| | - Rihui Yao
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640 China
| | - Zhiqiang Fang
- State Key Laboratory of Pulp and Paper Engineering, South China University of Technology, Guangzhou, 510640 China
| | - Xiuqi Huang
- Gu’an New Industry Demonstration Zone, Langfang, 065500 Hebei People’s Republic of China
| | - Xubing Lu
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou, 510006 China
| | - Junbiao Peng
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640 China
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Tong S, Sun J, Yang J. Printed Thin-Film Transistors: Research from China. ACS APPLIED MATERIALS & INTERFACES 2018; 10:25902-25924. [PMID: 29494132 DOI: 10.1021/acsami.7b16413] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Thin-film transistors (TFTs) have experienced tremendous development during the past decades and show great promising applications in flat displays, sensors, radio frequency identification tags, logic circuit, and so on. The printed TFTs are the key components for rapid development and commercialization of printed electronics. The researchers in China play important roles to accelerate the development and commercialization of printed TFTs. In this review, we comprehensively summarize the research progress of printed TFTs on rigid and flexible substrates from China. The review will focus on printing techniques of TFTs, printed TFT components including semiconductors, dielectrics and electrodes, as well as fully printed TFTs and printed flexible TFTs. Furthermore, perspectives on the remaining challenges and future developments are proposed.
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Affiliation(s)
- Sichao Tong
- Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics , Central South University , Changsha 410083 , Hunan , China
| | - Jia Sun
- Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics , Central South University , Changsha 410083 , Hunan , China
| | - Junliang Yang
- Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics , Central South University , Changsha 410083 , Hunan , China
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9
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Ning H, Zhou Y, Fang Z, Yao R, Tao R, Chen J, Cai W, Zhu Z, Yang C, Wei J, Wang L, Peng J. UV-Cured Inkjet-Printed Silver Gate Electrode with Low Electrical Resistivity. NANOSCALE RESEARCH LETTERS 2017; 12:546. [PMID: 28948539 PMCID: PMC5612900 DOI: 10.1186/s11671-017-2300-9] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2017] [Accepted: 08/30/2017] [Indexed: 05/03/2023]
Abstract
Inkjet-printed silver gate electrode with low electrical resistivity was fabricated by UV curing method. By adjusting the UV curing time and the distance between the samples and UV lamp, the effects of UV curing conditions on the electrical resistivity of the silver films were studied, and the lowest electrical resistivity of 6.69 × 10-8 Ω·m was obtained. Besides, the UV-cured silver films have good adhesion to the glass substrates, with adhesion strength of 4B (ASTM international standard). Our work offered an easy and low temperature approach to fabricate inkjet-printed silver electrodes with low electrical resistivity.
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Affiliation(s)
- Honglong Ning
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, People's Republic of China
| | - Yicong Zhou
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, People's Republic of China
| | - Zhiqiang Fang
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, People's Republic of China
| | - Rihui Yao
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, People's Republic of China.
| | - Ruiqiang Tao
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, People's Republic of China
| | - Jianqiu Chen
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, People's Republic of China
| | - Wei Cai
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, People's Republic of China
| | - Zhennan Zhu
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, People's Republic of China
| | - Caigui Yang
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, People's Republic of China
| | - Jinglin Wei
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, People's Republic of China
| | - Lei Wang
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, People's Republic of China
| | - Junbiao Peng
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, People's Republic of China.
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10
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Amorphous InGaZnO Thin Film Transistor Fabricated with Printed Silver Salt Ink Source/Drain Electrodes. APPLIED SCIENCES-BASEL 2017. [DOI: 10.3390/app7080844] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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