Advances in Two-Dimensional Magnetic Semiconductors via Substitutional Doping of Transition Metal Dichalcogenides

Defect states in magnetically "seasoned" WSSe - adsorption and doping effects of magnetic transition metals X = V, Cr, Mn, Fe, Co - a comprehensive first-principles study

Besides the symmetry breaking of Janus transition metal dichalcogenides (TMDs), Janus-based Diluted Magnetic Semiconductors (DMS) are attractive to study considering the local symmetry of transition metal (TM) dopant/adatom. This study conducts a first-principles calculation of magnetic properties in TM (V, Cr, Mn, Fe, and Co) -- doped and adsorbed Janus WSSe. Our results reveal that TM's atomic/ionic size impacts d-p-d orbital overlap, affecting bond length/angle and defect state positions. The result shows that V-doped WSSe exhibits long-range ferromagnetic order sustained by itinerant carriers and W atom spin-orbital coupling (SOC). The mechanism of d-p-d orbital hybridization is highlighted with an overlapping density of states and spin-density plots. Moreover, an enhanced magnetic anisotropy energy (MAE) is observed in Fe/Co-doped and Mn/Fe-adsorbed systems, with the easy axis aligning to the c-axis. The orbital contribution of MAE provided explains the relationship between states near the Fermi and MAE. On the other hand, the adsorption of V and Cr aligns the easy axis to the a-b plane, for which we have systematically explained the contribution of the spin-flip term in MAE. This research provides insights and a guideline for further exploration of 2D DMS for spintronics and spin-related phenomena.

Strain-induced bandgap engineering in 2D ψ-graphene materials: a first-principles study

High mechanical strength, excellent thermal and electrical conductivity, and tunable properties make two-dimensional (2D) materials attractive for various applications. However, the metallic nature of these materials restricts their applications in specific domains. Strain engineering is a versatile technique to tailor the distribution of energy levels, including bandgap opening between the energy bands. ψ-Graphene is a newly predicted 2D nanosheet of carbon atoms arranged in 5,6,7-membered rings. The half and fully hydrogenated (hydrogen-functionalized) forms of ψ-graphene are called ψ-graphone and ψ-graphane. Like ψ-graphene, ψ-graphone has a zero bandgap, but ψ-graphane is a wide-bandgap semiconductor. In this study, we have applied in-plane and out-of-plane biaxial strain on pristine and hydrogenated ψ-graphene. We have obtained a bandgap opening (200 meV) in ψ-graphene at 14% in-plane strain, while ψ-graphone loses its zero-bandgap nature at very low values of applied strain (both +1% and -1%). In contrast, fully hydrogenated ψ-graphene remains unchanged under the influence of mechanical strain, preserving its initial characteristic of having a direct bandgap. This behavior offers opportunities for these materials in various vital applications in photodetectors, solar cells, LEDs, pressure and strain sensors, energy storage, and quantum computing. The mechanical strain tolerance of pristine and fully hydrogenated ψ-graphene is observed to be -17% to +17%, while for ψ-graphone, it lies within the strain span of -16% to +16%.

Engineered Two-Dimensional Transition Metal Dichalcogenides for Energy Conversion and Storage

Designing efficient and cost-effective materials is pivotal to solving the key scientific and technological challenges at the interface of energy, environment, and sustainability for achieving NetZero. Two-dimensional transition metal dichalcogenides (2D TMDs) represent a unique class of materials that have catered to a myriad of energy conversion and storage (ECS) applications. Their uniqueness arises from their ultra-thin nature, high fractions of atoms residing on surfaces, rich chemical compositions featuring diverse metals and chalcogens, and remarkable tunability across multiple length scales. Specifically, the rich electronic/electrical, optical, and thermal properties of 2D TMDs have been widely exploited for electrochemical energy conversion (e.g., electrocatalytic water splitting), and storage (e.g., anodes in alkali ion batteries and supercapacitors), photocatalysis, photovoltaic devices, and thermoelectric applications. Furthermore, their properties and performances can be greatly boosted by judicious structural and chemical tuning through phase, size, composition, defect, dopant, topological, and heterostructure engineering. The challenge, however, is to design and control such engineering levers, optimally and specifically, to maximize performance outcomes for targeted applications. In this review we discuss, highlight, and provide insights on the significant advancements and ongoing research directions in the design and engineering approaches of 2D TMDs for improving their performance and potential in ECS applications.

Two-Step Conversion of Metal and Metal Oxide Precursor Films to 2D Transition Metal Dichalcogenides and Heterostructures

The widely studied class of two-dimensional (2D) materials known as transition metal dichalcogenides (TMDs) are now well-poised to be employed in real-world applications ranging from electronic logic and memory devices to gas and biological sensors. Several scalable thin film synthesis techniques have demonstrated nanoscale control of TMD material thickness, morphology, structure, and chemistry and correlated these properties with high-performing, application-specific device metrics. In this review, the particularly versatile two-step conversion (2SC) method of TMD film synthesis is highlighted. The 2SC technique relies on deposition of a solid metal or metal oxide precursor material, followed by a reaction with a chalcogen vapor at an elevated temperature, converting the precursor film to a crystalline TMD. Herein, the variables at each step of the 2SC process including the impact of the precursor film material and deposition technique, the influence of gas composition and temperature during conversion, as well as other factors controlling high-quality 2D TMD synthesis are considered. The specific advantages of the 2SC approach including deposition on diverse substrates, low-temperature processing, orientation control, and heterostructure synthesis, among others, are featured. Finally, emergent opportunities that take advantage of the 2SC approach are discussed to include next-generation electronics, sensing, and optoelectronic devices, as well as catalysis for energy-related applications.

Defect engineered magnetism induction and electronic structure modulation in monolayer MoS2

The electronic, magnetic, and optical characteristics of a defective monolayer MoS2 were examined by employing density functional theory (DFT)-based first-principles calculations. The effects of several defects on the electrical, magnetic, and optical properties, including Mo vacancies, MoS3 vacancies, and the substitution of a single Mo atom by two S atoms were studied in this work. Our first-principles calculations revealed that different types of defects produced distinct energy states within the band gap, leading to a band gap reduction after the introduction of various types of defects, which caused a change from semiconducting to metallic behavior. The spin-up and spin-down states were separated in the case of MoS3 vacancy. The total magnetization was ∼ -0.83 μ B /cell, and the absolute magnetization was ∼ 1.23 μ B /cell. Moreover, spin-up states had a 0.45 eV band gap, whereas spin-down states were metallic. Consequently, it can be promising for spin filter applications. It was disclosed that the broadband part of the electromagnetic spectrum has a high absorption coefficient, which is necessary for applications including impurity detection, photodiodes, and solar cells. Designing spintronic and optoelectronic devices will benefit from the modification of the electrical, optical, and magnetic properties by defect engineering of MoS2 monolayers presented here.

Interface-induced enhanced room temperature ferromagnetism in hybrid transition metal dichalcogenides

Magnetic semiconductors with both electron charge and spin features exhibit tremendous potential in spintronics. Although defective transition-metal dichalcogenides are promising with induced room temperature (RT) magnetic moments, impacts of the defect type and underlying mechanisms remain unclear. Herein, two strategies involving elemental substitution and epitaxial growth have been explored to synthesize alloyed and hybrid MoSe2-xSx with lattice distortion and artificial interfaces respectively. Both experimental measurements and first-principle calculations demonstrate induced magnetism in the resultant MoSe2-xSx with the magnetization intensity closely associated to the atomic structure. The alloyed MoSe2-xSx exhibits satisfactory structural stability and atomic magnetic moments due to the Mo 4d orbital splitting induced by lattice distortion. Nevertheless, both enhanced RT ferromagnetism and thermomagnetic stability can be achieved for the hybrid MoSe2-xSx resulted from stronger localized spin polarization at the MoSe2/MoS2 interfaces. As such the work not only sheds light on the mechanisms underlying defect-induced ferromagnetism in transition-metal dichalcogenides, but also proposes an interface engineering strategy to induce significant ferromagnetism for multi-fields including spintronics, multiferroics and valleytronics.

A novel two-dimensional NiCl2O8 lattice with negative Poisson's ratio and magnetic modulation

Two-dimensional (2D) materials with simultaneous magnetic semiconducting properties and a negative Poisson's ratio are crucial for fabricating multifunctional electronic devices. However, progress in this area has been generally constrained. Based on first-principles calculations, we engineered a 2D Ni-based oxyhalide with a honeycomb lattice structure. It was observed that the NiCl2O8 monolayer exhibits both high- and low-buckling states in its geometry, along with intrinsic magnetic semiconductor properties in its electronic structure. Importantly, we demonstrated that the magnetic ordering of the NiCl2O8 lattice is susceptible to applied strain, which resulted in a phase transition from paramagnetic to ferromagnetic under biaxial strain. The Curie temperature was also evaluated using Monte Carlo simulations within the Ising model. Additionally, our research uncovered that the 2D NiCl2O8 lattice chain displays a negative Poisson's ratio (NPR) along the z-direction. The triangular hinge structure in its centrosymmetric configuration was identified as the origin of this unique phenomenon. The coexistence of NPR and magnetic phase transition properties in the NiCl2O8 lattice makes it quite promising for applications in nanoelectronic and spintronic devices.