ZnO-based ultraviolet photodetectors

A Cascade Bilayer Electron-Transporting Layer for Enhanced Performance and Stability of Self-Powered All-Inorganic Perovskite Photodetectors

This study aims to enhance optoelectronic properties of all-inorganic perovskite photodetectors (PDs) by incorporating a bilayer electron transport layer (ETL). The bilayer ETL composed of SnO2 and ZnO effectively optimizes energy level alignment at the interface, facilitating efficient electron extraction from the CsPbI2Br perovskite layer while suppressing shunt pathways. Additionally, it enhances interfacial properties by mitigating defects and minimizing dark current leakage, thereby improving overall device performance. As a result, the bilayer ETL-based PDs exhibit broadband photoresponsivity in 300 to 700 nm with a responsivity of 0.45 A W-1 and a specific detectivity of 9 × 1013 Jones, outperforming the single-ETL devices. Additionally, they demonstrate stable cyclic photoresponsivity with fast response times (14 μs for turn-on and 32 μs for turn-off). The bilayer ETL also improves long-term reliability and thermal stability, highlighting its potential for high performance, reliability, and practical applications of all-inorganic perovskite PDs.

Zinc Oxide/Molybdenum Disulfide as Nanocomposite for Multifunctional Sensor Prototype

Different materials are studied for environmental gas sensors as well as photodetection prototypes. A ZnO/MoS2 p-n junction was synthetized to act as a multifunctional sensor prototype. After the ZnO was prepared on a silicon substrate by using DC sputtering at room temperature, molybdenum disulfide layers were spin-coated on a nanostructured zinc oxide flake-shaped surface to form an active layer. The heterostructure's composite surface was examined using scanning electron microscopy, energy-dispersed X-ray, and Raman spectroscopy. Responses to light frequencies, light intensities, and gas chemical tracing were characterized, revealing an enhanced multifunctional performance of the prototype. Characterizations of light-induced photocurrents indicted that the obtained response strength (photocurrent/illumination light power) was up to 0.01 A/W, and the response time was less than 5 ms. In contrast, the gas-sensing measurements showed that its response strength (variation in resistance/original resistance) was up to 3.7% and the response time was down to 150 s when the prototype was exposed to ammonia gas, with the concentration down to 168 ppm. The fabricated prototype appears to have high stability and reproducibility, quick response and recovery times, as well as a high signal-to-noise ratio.

Fully degradable, transparent, and flexible photodetectors using ZnO nanowires and PEDOT:PSS based nanofibres

Transparent light detection devices are attractive for emerging see-through applications such as augmented reality, smart windows and optical communications using light fidelity (Li-Fi). Herein, we present flexible and transparent photodetectors (PDs) using conductive poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS): Ag nanowires (NWs) based nanofibres and zinc oxide (ZnO) NWs on a transparent and degradable cellulose acetate (CA) substrate. The electrospun (PEDOT:PSS): Ag NW-based nanofibres exhibit a sheet resistance of 11 Ω/sq and optical transmittance of 79% (at 550 nm of wavelength). The PDs comprise of ZnO NWs, as photosensitive materials, bridging the electrode based on conductive nanofibres on CA substrate. The developed PDs exhibit high responsivity (1.10 ×106 A/W) and show excellent stability under dynamic exposure to ultraviolet (UV) light, and on both flat and curved surfaces. The eco-friendly PDs present here can degrade naturally at the end of life - thus offering an electronic waste-free solution for transparent electrodes and flexible optoelectronics applications.

p-CuO/n-ZnO Heterojunction Pyro-Phototronic Photodetector Controlled by CuO Preparation Parameters

The combination of ZnO with narrow bandgap materials such as CuO is now a common method to synthesize high-performance optoelectronic devices. This study focuses on optimizing the performance of p-CuO/n-ZnO heterojunction pyroelectric photodetectors, fabricated through magnetron sputtering, by leveraging the pyro-phototronic effect. The devices' photoresponse to UV (365 nm) and visible (405 nm) lasers is thoroughly examined. The results show that when the device performance is regulated by adjusting the three parameters-sputtering power, sputtering time, and sputtering oxygen-argon ratio-the optimal sputtering parameters should be as follows: sputtering power of 120 W, sputtering time of 15 min, and sputtering oxygen-argon ratio of 1:3. With the optimal sputtering parameters, the maximum responsivity of the pyroelectric effect and the traditional photovoltaic effect Rpyro+photo of the detector is 4.7 times that under the basic parameters, and the maximum responsivity of the traditional photovoltaic effect Rphoto is also 5.9 times that under the basic parameters. This study not only showcases the extensive potential of the pyro-phototronic effect in enhancing heterojunction photodetectors for high-performance photodetection but also provides some ideas for fabricating high-performance photodetectors.

High-Performance Sol-Gel-Derived CNT-ZnO Nanocomposite-Based Photodetectors with Controlled Surface Wrinkles

We investigate the effects of incorporating single-walled carbon nanotubes (CNTs) into sol-gel-derived ZnO thin films to enhance their optoelectronic properties for photodetector applications. ZnO thin films were fabricated on c-plane sapphire substrates with varying CNT concentrations ranging from 0 to 2.0 wt%. Characterization techniques, including high-resolution X-ray diffraction, photoluminescence, and atomic force microscopy, demonstrated the preferential growth of the ZnO (002) facet and improved optical properties with the increase in the CNT content. Electrical measurements revealed that the optimal CNT concentration of 1.5 wt% resulted in a significant increase in the dark current (from 0.34 mA to 1.7 mA) and peak photocurrent (502.9 µA), along with enhanced photoresponsivity. The rising and falling times of the photocurrent were notably reduced at this concentration, indicating improved charge dynamics due to the formation of a p-CNT/n-ZnO heterojunction. The findings suggest that the incorporation of CNTs not only modifies the structural and optical characteristics of ZnO thin films but also significantly enhances their electrical performance, positioning CNT-ZnO composites as promising candidates for advanced photodetector technologies in optoelectronic applications.

Recent Progress in Photodetectors: From Materials to Structures and Applications

Photodetectors are critical components in a wide range of applications, from imaging and sensing to communications and environmental monitoring. Recent advancements in material science have led to the development of emerging photodetecting materials, such as perovskites, polymers, novel two-dimensional materials, and quantum dots, which offer unique optoelectronic properties and high tunability. This review presents a comprehensive overview of the synthesis methodologies for these cutting-edge materials, highlighting their potential to enhance photodetection performance. Additionally, we explore the design and fabrication of photodetectors with novel structures and physics, emphasizing devices that achieve high figure-of-merit parameters, such as enhanced sensitivity, fast response times, and broad spectral detection. Finally, we discuss the demonstration of new applications enabled by these advanced photodetectors, including flexible and wearable devices, next-generation imaging systems, and environmental sensing technologies. Through this review, we aim to provide insights into the current trends and future directions in the field of photodetection, guiding further research and development in this rapidly evolving area.

Numerical evaluation and optimization of high sensitivity Cu2CdSnSe4 photodetector

Copper cadmium tin selenide (Cu2CdSnSe4) based photodetector (PD) has been explored with the solar cell capacitance simulator (SCAPS-1D). Herein, cadmium sulfide (CdS) and molybdenum disulfide (MoS2) are used as a window and back surface field (BSF) layers, respectively. The physical attributes, such as width, carrier density and bulk defects have been adjusted to attain the optimal conditions. In an optimized environment, the performance parameters of the Cu2CdSnSe4 (CCTSe) PD e.g. open circuit voltage (VOC), short circuit current (JSC), responsivity, and detectivity are determined as 0.76 V, 45.57 mA/cm2, 0.72 A/W and 5.05 × 1014 Jones, respectively without a BSF layer. After insertion of the BSF layer, the performance of the CCTSe PD is significantly upgraded because of the production of high built-in potential which rises the magnitude of VOC from 0.76 V to 0.84 V. For this reason, the responsivity and detectivity of CCTSe PD are also grows with the value of 0.84 A/W and 2.32 × 1015 Jones, respectively that indicate its future potential.

Wide Bandgap Semiconductors for Ultraviolet Photodetectors: Approaches, Applications, and Prospects

Ultraviolet (UV) light, invisible to the human eye, possesses both benefits and risks. To harness its potential, UV photodetectors (PDs) have been engineered. These devices can convert UV photons into detectable signals, such as electrical impulses or visible light, enabling their application in diverse fields like environmental monitoring, healthcare, and aerospace. Wide bandgap semiconductors, with their high-efficiency UV light absorption and stable opto-electronic properties, stand out as ideal materials for UV PDs. This review comprehensively summarizes recent advancements in both traditional and emerging wide bandgap-based UV PDs, highlighting their roles in UV imaging, communication, and alarming. Moreover, it examines methods employed to enhance UV PD performance, delving into the advantages, challenges, and future research prospects in this area. By doing so, this review aims to spark innovation and guide the future development and application of UV PDs.

Ag-modified enhance the performances of ZnO@CFs based omnidirectional photoelectrochemical ultraviolet detectors

There are several prospective applications for omnidirectional ultraviolet (UV) detectors and underwater detection detectors in optical systems and optical fields. In this work, ZnO nanorods arrays were grown on carbon fibers (CFs). An appropriate amount of Ag nanoparticles (NPs) was deposited on the surface of ZnO nanorods by photochemical deposition. This improved the performance of photoelectrochemical (PEC) based UV detectors. Under 365 nm and 10 mW cm-2UV irradiation, the photocurrent density of the 30s-Ag/ZnO@CFs based PEC UV detector can reach 1.28 mA cm-2, which is about 7 times that of the ZnO@CFs based PEC UV detector, and the rising time is shortened from 0.17 to 0.10 s. The reason is that increased absorption of ultraviolet light induced by the localized surface plasmon resonance. In addition, the detector exhibits a good flexibility and remains flexible after hundreds of bends and twists. Moreover, the detector is responsive in the range of rotation angle from 0° to 360°. It provides an insight to improve the photoelectric performance and underwater omnidirectional detection ability of the PEC UV detector.

Fabrication of a wearable and foldable photodetector based on a WSe2-MXene 2D-2D heterostructure using a scalable handprint technique

Several studies on semiconductor material-based single-band, high-performance photosensitive, and chemically stable photodetectors are available; however, the lack of broad spectral response, device flexibility, and biodegradability prevents them from being used in wearable and flexible electronics. Apart from that, the selection of the device fabrication technique is a very crucial factor nowadays in terms of equipment utilization and environmental friendliness. This report presents a study demonstrating a straightforward solvent- and equipment-free handprint technique for the fabrication of WSe2-Ti3C2TX flexible, biodegradable, robust, and broadband (Vis-NIR) photodetectors. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDX), UV-visible spectroscopy, and X-ray photoelectron spectroscopy (XPS) confirm the formation of a WSe2-Ti3C2TX film. The WSe2-Ti3C2TX van der Waals heterostructure plays a key role in enhancing the optoelectrical properties. The as-prepared photodetector exhibits efficient broadband response with a photoresponsivity and a detectivity of 0.3 mA W-1 and 6.8 × 1010 Jones, respectively, under NIR (780 nm) irradiation (1.0 V bias). Under various pressure and temperature conditions, the device's flexibility and durability were tested. The biodegradable photodetector prepared through the solvent- and equipment-free handprint technique has the potential to attract significant interest in wearable and flexible electronics in the future.

Enhancement of solar blind full band absorption in photodetector with Ga2O3 nanopore and Al nanograting

In this paper, we presented a novel double-layer light-trapping structure consisting of nanopores and nanograting positioned on both the surface and bottom of a gallium oxide-based solar-blind photodetector. Utilizing the finite element method (FEM), we thoroughly investigated the light absorption enhancement capabilities of this innovative design. The simulation results show that the double-layer nanostructure effectively combines the light absorption advantages of nanopores and nanogratings. Compared with thin film devices and devices with only nanopore or nanograting structures, double-layer nanostructured devices have a higher light absorption, achieving high light absorption in the solar blind area.

Growth of Wafer-Scale Single-Crystal 2D Semiconducting Transition Metal Dichalcogenide Monolayers

Due to extraordinary electronic and optoelectronic properties, large-scale single-crystal two-dimensional (2D) semiconducting transition metal dichalcogenide (TMD) monolayers have gained significant interest in the development of profit-making cutting-edge nano and atomic-scale devices. To explore the remarkable properties of single-crystal 2D monolayers, many strategies are proposed to achieve ultra-thin functional devices. Despite substantial attempts, the controllable growth of high-quality single-crystal 2D monolayer still needs to be improved. The quality of the 2D monolayer strongly depends on the underlying substrates primarily responsible for the formation of grain boundaries during the growth process. To restrain the grain boundaries, the epitaxial growth process plays a crucial role and becomes ideal if an appropriate single crystal substrate is selected. Therefore, this perspective focuses on the latest advances in the growth of large-scale single-crystal 2D TMD monolayers in the light of enhancing their industrial applicability. In the end, recent progress and challenges of 2D TMD materials for various potential applications are highlighted.

Quantification of UV Light-Induced Spectral Response Degradation of CMOS-Based Photodetectors

High-energy radiation is known to potentially impact the optical performance of silicon-based sensors adversely. Nevertheless, a proper characterization and quantification of possible spectral response degradation effects due to UV stress is technically challenging. On one hand, typical illumination methods via UV lamps provide a poorly defined energy spectrum. On the other hand, a standardized measurement methodology is also missing. This work provides an approach where well-defined energy spectrum UV stress conditions are guaranteed via a customized optical set up, including a laser driven light source, a monochromator, and a non-solarizing optical fiber. The test methodology proposed here allows performing a controlled UV stress between 200 nm and 400 nm with well-defined energy conditions and offers a quantitative overview of the impact on the optical performance in CMOS-based photodiodes, along a wavelength range from 200 to 1100 nm and 1 nm step. This is of great importance for the characterization and development of new sensors with a high and stable UV spectral response, as well as for implementation of practical applications such as UV light sensing and UV-based sterilization.

The Interplay of Growth Mechanism and Properties of ZnO Nanostructures for Different Applications

This review provides a background on the structure and properties of ZnO nanostructures. ZnO nanostructures are advantageous for many applications in sensing, photocatalysis, functional textiles, and cosmetic industries, which are described in this review. Previous work using UV Visible (UV-vis) spectroscopy and scanning electron microscopy (SEM) for ZnO nanorod growth analysis in-solution and on a substrate for determination of optical properties and morphology is discussed, as well as their results in determining the kinetics and growth mechanisms. From this literature review, it is understood that the synthesis process greatly affects nanostructures and properties; and hence, their applications. In addition, in this review, the mechanism of ZnO nanostructure growth is unveiled, and it is shown that by having greater control over their morphology and size through such mechanistic understanding, the above-mentioned applications can be affected. The contradictions and gaps in knowledge are summarized in order to highlight the variations in results, followed by suggestions for how to answer these gaps and future outlooks for ZnO nanostructure research.

Tailoring the Size and Shape of ZnO Nanoparticles for Enhanced Performance of OLED Device

We synthesized zinc oxide nanoparticles (ZnO NPs) by meticulously controlling both temperature and reaction times, allowing us to fine-tune their crystalline properties, morphology, and particle dimensions. This analysis confirmed the existence of a mixture of rod and sphere shapes (ZnO-I), including rod-shaped NPs with an average size of 14.8 nm × 5.2 nm and spherical NPs with an average diameter of 5.27 nm. We subsequently incorporated these synthesized ZnO NPs into organic light-emitting diode (OLED) devices for red, green, and blue colors, utilizing them as the electron injection layer through a solution-based process. The green OLED device using ZnO-I exhibited a promising current efficiency of 4.02 cd/A and an external quantum efficiency of 1.47%.

ZnO tetrapod morphology influence on UV sensing properties

The aim of this work was to investigate how ZnO tetrapod (ZnO-T) morphology, structure, and surface charge properties (i.e. Debye length) influence their UV sensing properties, shedding light on the underlying photoresponse mechanisms. ZnO-Ts were synthesized and centrifuged to obtain three different fractions with tuned morphology, which were characterized by scanning electron microscopy, transmission electron microscopy, and high-resolution transmission electron microscopy microscopies, x-ray diffraction analysis, Brunauer-Emmett-Teller measurements, FTIR and UV-vis spectroscopies. ZnO-T UV sensors were fabricated and tested comparing among ZnO-T fractions and commercial ZnO nanoparticles. ZnO-T photoresponse was mostly influenced by ZnO-T leg diameter, with the optimal value close to the double Debye length. We also demonstrated how fractionating ZnO-Ts for morphology optimization can increased the responsivity by 2 orders of magnitude. Moreover, ZnO-T showed 3 orders of magnitude higher responsivity compared to commercial ZnO nanopowder. These results are beneficial for the engineering of efficient UV sensors and contribute to a deeper understanding the overall mechanism governing UV photoresponse.

Relevance of alcoholic solvents in the growth of ZnO nanoparticles and ZnO hierarchical nanorod structures on their optical and opto-electrical properties

We report on the synthesis of ZnO nanoparticles and ZnO hierarchical nanorod structures using four different alcohols i.e. methanol, isopropanol, ethanol, and aqueous ethanol (70% alcohol, 30% water). The syntheses of the nanoparticles were carried out by non-aqueous and hydrothermal routes. In general, absolute alcohol allows a better control of the synthesis reaction and nanoparticles as small as 5 nm were obtained, confirmed by TEM. XPS analysis elucidated the chemical states that were correlated to the synthesis reaction. For the nanorod growth, these four alcohols were used as seeding solvents, followed by hydrothermal ZnO nanorod growth. Here, the seed layer tailored the nanorod diameters and surface defects, which were studied by SEM and photoluminescence spectroscopy. Subsequently, the ZnO nanorods were electrically characterized and exhibited persistent photoconductivity under UV irradiation of 365 nm. The differences in conductivity in dark and under UV irradiation were attributed to the size of the nanorods, defect states, semiconductor band bending and oxygen adsorption-desorption mechanisms. Parameters such as photoresponse and photosensitivity are also calculated in order to evaluate their applicability in UV sensors. This work demonstrates optimization of the physical, chemical, electrical and optical properties of both ZnO nanostructures via the use of alcoholic solvents.

Improved Visible Emission from ZnO Nanoparticles Synthesized via the Co-Precipitation Method

Since ZnO nanoparticles (NPs) possess a variety of intrinsic defects, they can provide a wide spectrum of visible emission, without adding any impurity or any doping atoms. They are attracting more and more interest as a material for light sources and energy downshifting systems. However, defect emission with a high luminescence quantum efficiency (PL QY) is difficult to obtain. Here, we present the co-precipitation synthesis parameters permitting to attain ZnO NPs with highly visible PL QYs. We found that the nature of zinc precursors and alkaline hydroxide (KOH or LiOH) used in this method affects the emission spectra and the PL QY of the as-grown ZnO NPs. LiOH is found to have an advantageous effect on the visible emission efficiency when added during the synthesis of the ZnO NPs. More precisely, LiOH permits to increase the emission efficiency in the visible up to 13%. We discuss the effects of the nanoparticle size, the morphology and the surface stabilization on the enhancement of the luminescent emission efficiency. Various spectral contributions to the luminescent emission were also examined, in order to achieve a control of the defect emission to increase its efficiency.

High-Performance Low-Voltage Transparent Metal-Semiconductor-Metal Ultraviolet Photodetectors Based on Ultrathin Gold Asymmetric Interdigitated Electrodes

A high-performance, low-voltage, transparent, metal-semiconductor-metal ultraviolet (UV) photodetector (PD) is proposed and experimentally demonstrated, based on gold (Au) asymmetric interdigitated (aIDT) electrodes with thicknesses well below 10 nm. A 7-nm-thick Au film, with a visible transmittance of 80.4% and a sheet resistance of 11.55 Ω/sq, is patterned into aIDT electrodes on a ZnO active layer, whose average visible transmittance is up to 74.3%. Meshing the pads further improves the overall transmittance of the device. Among all fabricated devices, the PD with the aIDT finger width ratio of 1:4 performs the best. Very low dark currents are achieved at 0, 0.5 and 1 V, allowing for high responsivities and specific detectivities to the UV light. It is also a fast device, especially under the biases of 0.5 and 1 V. The comprehensive performances are comparable and even superior to those of the reported devices. The asymmetric Schottky junctions induced by the aIDT electrodes under UV illumination are the main mechanism for the low-voltage operation of our transparent PD, which is promising to be applied widely.

Influence of Antimony Species on Electrical Properties of Sb-Doped Zinc Oxide Thin Films Prepared by Pulsed Laser Deposition

This study systematically investigates the influence of antimony (Sb) species on the electrical properties of Sb-doped zinc oxide (SZO) thin films prepared by pulsed laser deposition in an oxygen-rich environment. The Sb species-related defects were controlled through a qualitative change in energy per atom by increasing the Sb content in the Sb₂O₃:ZnO-ablating target. By increasing the content of Sb₂O₃ (wt.%) in the target, Sb³⁺ became the dominant Sb ablation species in the plasma plume. Consequently, n-type conductivity was converted to p-type conductivity in the SZO thin films prepared using the ablating target containing 2 wt.% Sb₂O₃. The substituted Sb species in the Zn site (Sb_Zn³⁺ and Sb_Zn⁺) were responsible for forming n-type conductivity at low-level Sb doping. On the other hand, the Sb-Zn complex defects (Sb_Zn-2V_Zn) contributed to the formation of p-type conductivity at high-level doping. The increase in Sb₂O₃ content in the ablating target, leading to a qualitative change in energy per Sb ion, offers a new pathway to achieve high-performing optoelectronics using ZnO-based p-n junctions.

Enhanced Spectral Response of ZnO-Nanorod-Array-Based Ultraviolet Photodetectors by Alloying Non-Isovalent Cu-O with CuAlO2 P-Type Layer

CuAlO₂ was synthesized by a hydrothermal method, in which the Cu-O dimers were incorporated by simply altering the ratio of the reactants and the temperature. The incorporation process increases the grain size in CuAlO₂, and modulates the work function and binding energies for CuAlO₂ due to the partial substitution of Cu⁺ 3d¹⁰ with Cu²⁺ 3d⁹ orbitals in the valence band maximum by alloying non-isovalent Cu-O with a CuAlO₂ host. Based on the ZnO nanorod arrays (NRs) ultraviolet photodetector, CuAlO₂/Cu-O fabricated by the low-cost drop-coating method was used as the p-type hole transport layer. The incorporation of the Cu-O clusters into CuAlO₂ lattice to enhance the conductivity of CuAlO₂ is an effective way for improving ZnO NRs/CuAlO₂ device performance. The photodetectors exhibit significant diode behavior, with a rectification ratio approaching 30 at ±1 V, and a dark saturation current density 0.81 mA cm^-2. The responsivity of the ZnO-NRs-based UV photodetector increases from 13.2 to 91.3 mA/W at 0 V bias, with an increase in the detectivity from 2.35 × 10¹⁰ to 1.71 × 10¹¹ Jones. Furthermore, the ZnO NRs/[CuAlO₂/Cu-O] photodetector exhibits a maximum responsivity of 5002 mA/W at 1.5 V bias under 375 nm UV illumination.

Fabrication of High-Performance Visible-Blind Ultraviolet Photodetectors Using Electro-ionic Conducting Supramolecular Nanofibers

The detection of ultraviolet (UV) light is vital for various applications, such as chemical-biological analysis, communications, astronomical studies, and also for its adverse effects on human health. Organic UV photodetectors are gaining much attention in this scenario because they possess properties such as high spectral selectivity and mechanical flexibility. However, the achieved performance parameters are much more inferior than the inorganic counterparts because of the lower mobility of charge carriers in organic systems. Here, we report the fabrication of a high-performance visible-blind UV photodetector, using 1D supramolecular nanofibers. The nanofibers are visibly inactive and exhibit highly responsive behavior mainly for UV wavelengths (275-375 nm), the highest response being at ∼275 nm. The fabricated photodetectors demonstrate desired features, such as high responsivity and detectivity, high selectivity, low power consumption, and good mechanical flexibility, because of their unique electro-ionic behavior and 1D structure. The device performance is shown to be improved by several orders through the tweaking of both electronic and ionic conduction pathways while optimizing the electrode material, external humidity, applied voltage bias, and by introducing additional ions. We have achieved optimum responsivity and detectivity values of around 6265 A W^-1 and 1.54 × 10¹⁴ Jones, respectively, which stand out compared with the previous organic UV photodetector reports. The present nanofiber system has great potential for integration in future generations of electronic gadgets.

Review of Luminescence-Based Light Spectrum Modifications Methods and Materials for Photovoltaics Applications

The dynamic development of photovoltaic and photo-sensitive electronic devices is constantly stimulated by material and technological advances. One of the key concepts that is highly recommended for the enhancement of these device parameters is the modification of the insulation spectrum. Practical implementation of this idea, although difficult, may be highly beneficial for photoconversion efficiency, photosensitivity range extension, and their cost reduction. The article presents a wide range of practical experiments leading to the manufacturing of functional photoconverting layers, dedicated to low-cost and wide-scale deposition methods. Various active agents, based on different luminescence effects as well as the possible organic carrier matrixes, substrate preparation and treatment procedures, are presented. New innovative materials, based on their quantum effects, are examined. The obtained results are discussed in terms of the application in new generation photovoltaics and other optoelectronic elements.

Nanomaterials as catalysts for CO2 transformation into value-added products: A review

Carbon dioxide (CO₂₎ is the most important greenhouse gas (GHG), accounting for 76% of all GHG emissions. The atmospheric CO₂ concentration has increased from 280 ppm in the pre-industrial era to about 418 ppm, and is projected to reach 570 ppm by the end of the 21^st century. In addition to reducing CO₂ emissions from anthropogenic activities, strategies to adequately address climate change must include CO₂ capture. To promote circular economy, captured CO₂ should be converted to value-added materials such as fuels and other chemical feedstock. Due to their tunable chemistry (which allows them to be selective) and high surface area (which allows them to be efficient), engineered nanomaterials are promising for CO₂ capturing and/or transformation. This work critically reviewed the application of nanomaterials for the transformation of CO₂ into various fuels, like formic acid, carbon monoxide, methanol, and ethanol. We discussed the literature on the use of metal-based nanomaterials, inorganic/organic nanocomposites, as well as other routes suitable for CO₂ conversion such as the electrochemical, non-thermal plasma, and hydrogenation routes. The characteristics, steps, mechanisms, and challenges associated with the different transformation technologies were also discussed. Finally, we presented a section on the outlook of the field, which includes recommendations for how to continue to advance the use of nanotechnology for conversion of CO₂ to fuels.

Fast all-fiber ultraviolet photodetector based on an Ag-decorated ZnO micro-pillar

There are urgent demands of ultraviolet (UV) photodetectors with high sensitivity and fast response due to the wide application of ultraviolet light in the fields of medical treatment, space exploration, optical communication and semiconductor industry. The response speed of traditional ZnO-based UV photodetectors is always limited by the carrier mobility and electrical resistance caused by the external circuits. Utilizing the all-optical detection method may replace the complex circuit structure and effectively improve the response speed of photodetectors. Here, a fast-response fiber-optic UV photodetector is proposed, where a ZnO micro-pillar is fixed on the end face of a fiber-tip and acts as a Fabry-Pérot interferometer (FPI). Under the irradiation of UV light, the photo-generated carriers change the refractive index of the ZnO micro-pillar, leading to a redshift of the interference wavelengths of the ZnO FPI. To enhance this effect, a discontinuous Ag film with an island-like structure is coated on the surface of ZnO micro-pillars through magnetron sputtering, and therefore the sensitivity of the proposed device achieves to 1.13 nm/(W·cm^-2), which is 3.9 times higher than that of without Ag-decoration, due to the intensification of photo-carrier change with the help of the Schottky junction formed between Ag film and ZnO micro-pillar. Meanwhile, since the response speed of the proposed device is mainly determined by the temporal RI change of ZnO micro-pillar, the fiber-optic UV photodetector also shows very fast response with a rise time of 35 ns and a decay time of 40 µs. The demonstrated structure takes full advantage of optical fiber devices, exhibiting compactness, flexibility, fast response and immune to electromagnetic interference, which paves a new way for the next generation of photodetection devices.

Hybrid UV Photodetector Design Incorporating AuPt Alloy Hybrid Nanoparticles, ZnO Quantum Dots, and Graphene Quantum Dots

A hybrid device scheme is an attractive strategy in the construction of advanced UV photodetectors due to the flexibility in selecting the components and correspondingly improved optoelectronic properties by the cooperation of various components, which cannot be achieved by a single component device. In this work, a novel hybrid UV photodetector (PD) is demonstrated by adapting AuPt alloy hybrid nanoparticles (AHNPs), ZnO quantum dots (QDs), and graphene quantum dots (GQDs), namely, GQD/ZnO/AHNP PD. The optimized device achieves high-end figure-of-merit performance with a responsivity of 2299 mA/W, detectivity of 7.04 × 10¹⁰ jones, and external quantum efficiency of 741%. Enhanced photocurrent can be associated with the hot electron generation around the AuPt AHNPs and swift transfer to the conduction band of ZnO QDs. At the same time, the added carrier injection is achieved by a thin layer of GQDs. High density of hotspots and electromagnetic fields are generated by the strong localized surface plasmon resonance (LSPR) by the uniquely designed AuPt AHNPs with the fully alloyed AuPt NPs and adjacent small background Au NPs. The e-field distribution of various NP configurations is systematically investigated with finite-difference time-domain (FDTD) simulations.

Gas Selectivity Enhancement Using Serpentine Microchannel Shaped with Optimum Dimensions in Microfluidic-Based Gas Sensor

A microfluidic-based gas sensor was chosen as an alternative method to gas chromatography and mass spectroscopy systems because of its small size, high accuracy, low cost, etc. Generally, there are some parameters, such as microchannel geometry, that affect the gas response and selectivity of the microfluidic-based gas sensors. In this study, we simulated and compared 3D numerical models in both simple and serpentine forms using COMSOL Multiphysics 5.6 to investigate the effects of microchannel geometry on the performance of microfluidic-based gas sensors using multiphysics modeling of diffusion, surface adsorption/desorption and surface reactions. These investigations showed the simple channel has about 50% more response but less selectivity than the serpentine channel. In addition, we showed that increasing the length of the channel and decreasing its height improves the selectivity of the microfluidic-based gas sensor. According to the simulated models, a serpentine microchannel with the dimensions W = 3 mm, H = 80 µm and L = 22.5 mm is the optimal geometry with high selectivity and gas response. Further, for fabrication feasibility, a polydimethylsiloxane serpentine microfluidic channel was fabricated by a 3D printing mold and tested according to the simulation results.

Fabrication and improved response of ZnO-CdO composite films under different laser irradiation dose

Promising Zinc Oxide (ZnO) and Cadmium Oxide (CdO) alloy (ZnO-CdO) films were fabricated on glass substrates by screen printing route for optoelectronic applications. The Nd:YAG green diode laser of wavelength 532 nm and laser fluence of 1.8 J/cm² was used to irradiate the fabricated films at room temperature. The characterization of these films were systematically studied by means of X-ray diffraction (XRD), UV–vis, photoluminescence (PL), Raman spectroscopy and two probe method for conductivity measurement. The XRD pattern shows that all the films were well crystallized with maximum diffraction of (101) plane and mixed phases of ZnO and CdO were detected. The structure, space group and other crystal related parameters were confirmed from Rietveld refinement of XRD data. The basic optical parameters (band gap, refractive index and extinction coefficient) have been estimated using absorbance spectra. The PL spectrum of ZnO-CdO composite films exhibits red shift and blue- green emissions shift upon laser irradiation were confirmed from CIE 1931 diagram. The Raman spectroscopy indicates that the quality of the ZnO-CdO films was increased while their structure defects were increased. DC conductivity measurement confirms semiconductor behaviour. All the parameters such as particle size, optical constants, colour emission and activation energy have been significantly improved upon laser irradiations dose of 1.8 J/cm² for different durations of time. This study could be appropriate for optoelectronic applications.

Van der Waals Epitaxial Growth of ZnO Films on Mica Substrates in Low-Temperature Aqueous Solution

In this article, we demonstrate the van der Waals (vdW) epitaxial growth of ZnO layers on mica substrates through a low-temperature hydrothermal process. The thermal pretreatment of mica substrates prior to the hydrothermal growth of ZnO is essential for growing ZnO crystals in epitaxy with the mica substrates. The addition of sodium citrate into the growth solution significantly promotes the growth of ZnO crystallites in a lateral direction to achieve fully coalesced, continuous ZnO epitaxial layers. As confirmed through transmission electron microscopy, the epitaxial paradigm of the ZnO layer on the mica substrate was regarded as an incommensurate van der Waals epitaxy. Furthermore, through the association of the Mist-CVD process, the high-density and uniform distribution of ZnO seeds preferentially occurred on mica substrates, leading to greatly improving the epitaxial qualities of the hydrothermally grown ZnO layers and obtaining flat surface morphologies. The electrical and optoelectrical properties of the vdW epitaxial ZnO layer grown on mica substrates were comparable with those grown on sapphire substrates through conventional solution-based epitaxy techniques.

UV-Activated NO2 Gas Sensing by Nanocrystalline ZnO: Mechanistic Insights from Mass Spectrometry Investigations

In this work, the photostimulated processes of O2 and NO2 molecules with the surface of ZnO under UV radiation were studied by in situ mass spectrometry in the temperature range of 30–100 ∘C. Nanocrystalline needle-like ZnO was synthesized by decomposition of basic zinc carbonate at 300 ∘C, and the surface concentration of oxygen vacancies in it were controlled by reductive post-annealing in an inert gas at 170 ∘C. The synthesized materials were characterized by XRD, SEM, low-temperature nitrogen adsorption (BET), XPS, Raman spectroscopy, and PL spectroscopy. Irradiation of samples with UV light causes the photoabsorption of both O2 and NO2. The photoadsorption properties of ZnO are compared with its defective structure and gas-sensitive properties to NO2. A model of the sensor response of ZnO to NO2 under UV photoactivation is proposed.

A novel high performance photodetection based on axial NiO/β-Ga2O3p-n junction heterostructure nanowires array

Axial NiO/β-Ga₂O₃heterostructure (HS) nanowires (NWs) array was fabricated on Si substrate by catalytic free and controlled growth process called glancing angle deposition technique. The field emission scanning electron microscope image shows the formation of well aligned and vertical NWs. A typical high resolution transmission electron microscope image confirms the formation of axial HS NWs consisting ofβ-Ga₂O₃NW at the top and NiO NW at the bottom with an overall length ∼213 nm. A large photo absorption and also photoemission was observed for axial NiO/β-Ga₂O₃HS NW as compared to the NiO/β-Ga₂O₃HS thin film sample. Moreover, x-ray photoelectron spectroscopy analysis prove that there are higher oxygen vacancies with no deviation in electronic state after the formation of axial HS NW. Also, a high performance photodetector (PD) with a very low dark current of 6.31 nA and fast photoresponse with rise time and fall time of 0.28 s and 0.17 s respectively at +4 V was achieved using the axial NiO/β-Ga₂O₃HS NWs. The type-II HS p-n junction formation and efficient charge separation at the small wire axis also makes this design to operate in self-powered mode.

Advances in Self-Powered Ultraviolet Photodetectors Based on P-N Heterojunction Low-Dimensional Nanostructures

Self-powered ultraviolet (UV) photodetectors have attracted considerable attention in recent years because of their vast applications in the military and civil fields. Among them, self-powered UV photodetectors based on p-n heterojunction low-dimensional nanostructures are a very attractive research field due to combining the advantages of low-dimensional semiconductor nanostructures (such as large specific surface area, excellent carrier transmission channel, and larger photoconductive gain) with the feature of working independently without an external power source. In this review, a selection of recent developments focused on improving the performance of self-powered UV photodetectors based on p-n heterojunction low-dimensional nanostructures from different aspects are summarized. It is expected that more novel, dexterous, and intelligent photodetectors will be developed as soon as possible on the basis of these works.

Electrochemical synthesis of Zinc oxide/polymer/phosphotungstic acid composites for a UV detector

ZnO is an ideal material for UV detection. However, due to the surface effect of ZnO, the photosensitivity of the ZnO based UV detector needs to be improved. In this study, we deposited a hydroxyl group functionalized (3,4-propylenethiophene) polymer (PProDOT-OH) film onto a hydrothermally grown ZnO nanoarray by electro-chemical deposition method to prevent the corrosion of ZnO by phosphotungsten acid (PWA), and then PWA was drip-coated on the composite film to prepare the ZnO/PProDOT-OH/PWA composite based UV detector. The structure and morphology of the composite were characterized by SEM, UV–vis, FT-IR, XRD, Raman, EDS, XPS analysis, illustrating the phosphotungstic acid was uniformly coated on ZnO/PProDOT-OH surface and confirming the composite was successfully synthesized. The UV detection performance was studied through preparing a UV detector with the composite material and results indicate that the introduction of PWA could enhance the responsivity of the ZnO/PProDOT-OH composite-based UV detector.

Rectifying ZnO-Na/ZnO-Al aerogels p-n homojunctions

Semiconductor ZnO aerogels were synthesized by a sol-gel process with different concentrations (2.5-7.5 wt.%) of Al (n-type) or Na (p-type) and dried under supercritical CO2. The materials were calcined at 500 °C to remove the organic content and to crystallize the ZnO. The microstructure of the ZnO-based aerogels comprises a porous structure with hexagonal and platelet-shaped interconnected particles. The bandgap of the aerogels doped with Al decreased significantly compared to pure, undoped ZnO aerogels, while their specific surface area increased. For the electrical characterization of the ZnO-Na/ZnO-Al junctions, the doped ZnO aerogels were deposited on commercial glass substrates coated with indium tin oxide (ITO) by drop casting method. The I-V curves of the p-n homojuntions revealed a characteristic diode rectifying behavior.

Channel Scaling Dependent Photoresponse of Copper-Based Flexible Photodetectors Fabricated Using Laser-Induced Oxidation

Copper (Cu) oxide compounds (Cu_xO), which include cupric (CuO) and cuprous (Cu₂O) oxide, have been recognized as a promising p-channel material with useful photovoltaic properties and superior thermal conductivity. Typically, deposition methods or thermal oxidation can be used to obtain Cu_xO. However, these processes are difficult to apply to flexible substrates because plastics have a comparatively low glass transition temperature. Also, additional patterning steps are needed to fabricate applications. In this work, we fabricated a metal-semiconductor-metal photodetector using laser-induced oxidation of thin Cu films under ambient conditions. Raman spectroscopy, scanning electron microscopy-energy-dispersive X-ray spectroscopy, and atomic force microscopy were used to study the composition and morphology of our devices. Moreover, the photoresponse of this device is reported herein. We performed an in-depth analysis of the relationship between the channel size and number of carriers using scanning photocurrent microscopy. The carrier transport behaviors were identified; the photocurrent decreased as the length and width of the channel increased. Furthermore, we verified the suitability of the device as a flexible photodetector using a variety of bending tests. Our in-depth analysis of this Cu-based flexible photodetector could play an important role in understanding the mechanisms of other flexible photovoltaic applications.

High-Responsivity Gate-Tunable Ultraviolet-Visible Broadband Phototransistor Based on Graphene-WS2 Mixed-Dimensional (2D-0D) Heterostructure

Recent progress in the synthesis of highly stable, eco-friendly, cost-effective transition-metal dichalcogenide (TMDC) quantum dots (QDs) with their broadband absorption spectra and wavelength selectivity features have led to their increasing use in broadband photodetectors. With the solution-based processing, we demonstrate a superlarge (∼0.75 mm²), ultraviolet-visible (UV-vis) broadband (365-633 nm) phototransistor made of WS₂ QDs-decorated chemical vapor deposited (CVD) graphene as the active channel with extraordinary stability and durability under ambient conditions (without any degradation of photocurrent until 4 months after fabrication). Here, colloidal zero-dimensional (0D) WS₂ QDs are used as the photoabsorbing material, and graphene acts as the conducting channel. A high photoresponsivity (3.1 × 10² A/W), moderately high detectivity (∼8.9 × 10⁸ Jones), and low noise equivalent power (∼9.7 × 10^-11 W/Hz^0.5) are obtained at a low bias voltage (V_ds = 1 V) at an illumination of 365 nm with optical power as low as ∼0.8 μW/cm², which can be further tuned by modulating the gate bias. While comparing the photocurrent between two different morphologies of WS₂ [QDs and two-dimensional (2D) nanosheets], a significant enhancement of photocurrent is observed in the case of QD-based devices. Ab initio density functional theory (DFT)-based calculations further support our observation, revealing the role of quantum confinement in enhanced photoresponse. Our work reveals a strategy toward developing a scalable, cost-effective, high-performance hybrid mixed-dimensional (2D-0D) photodetector with graphene-WS₂ QDs for next-generation optoelectronic applications.

Schottky-type GaN-based UV photodetector with atomic-layer-deposited TiN thin film as electrodes

In this work, a GaN-based UV photodetector with an asymmetric electrode structure was fabricated by atomic layer deposition (ALD) of TiN layers. The thickness of the TiN can be monitored in situ by a quartz crystal microbalance (QCM) and precisely controlled through the modulation of deposition cycles. During the ALD process, periodic variation in the QCM frequency was observed and correlated to the physical adsorption, chemical bonding, and the excessive precursor exhaust, which included tetrakis(dimethylamino)titanium (TDMAT) and N sources. The asymmetric TiN/GaN/TiN photodetector showed excellent photosensing performance, with a UV-visible rejection ratio of 173, a responsivity of 4.25 A/W, a detectivity of 1.1×10¹³ Jones, and fast response speeds (a rise time of 69 μs and a decay time of 560 μs). Moreover, the device exhibits high stability, with an attenuation of only approximately 0.5% after 360 nm light irradiation for 157 min. This result indicates the potential of TiN as a transparent contact electrode for GaN-based optoelectronic devices.

Sensing of ultraviolet light: a transition from conventional to self-powered photodetector

Clouds in the sky pass almost 80% of ultraviolet (UV) radiation to the earth's surface, which has a significant impact on humankind. Conventional UV photodetectors (PDs) require an external battery, which not only increases the device size but also has a limited life span and maintenance costs can be prohibitively expensive. An alternative and more technically-sound solution would be the use of self-powered UV PDs that can operate independently, eliminating the need for an external source. Although many exciting studies have been done and state-of-the-art research is underway to successfully fabricate self-powered UV PDs, periodic reviews on this topic are deemed essential so that the technology's readiness can be properly evaluated and critical challenges can be addressed in a timely manner. In this article, the key issues and most exciting developments made in recent years on built-in electric field assisted self-powered UV PDs based on p-n homojunctions, p-n heterojunctions, and Schottky junctions followed by energy harvester integrated UV PDs are extensively reviewed. Finally, a summary and comparison of different types of self-powered UV PDs as well as future challenges that need to be addressed are discussed. This review sets a foundation providing essential insights into the present status of self-powered UV PDs with which researchers can engage and deal with the major challenges.

Visible-blind and flexible metal-semiconductor-metal ultraviolet photodetectors based on sub-10-nm thick silver interdigital electrodes

We propose and experimentally demonstrate a distinct visible-blind and flexible metal-semiconductor-metal ultraviolet (UV) photodetector (PD) based on sub-10-nm thick silver interdigital electrodes. The transparent PD with 7-nm thick electrodes shows enhanced visible transmittance (80%) in average and achieves greatly improved responsivity (60.5 mA/W), and detectivity (1.75×10¹⁰ Jones) at 5 V under 380-nm illumination, compared with its opaque counterpart. It is as fast as the opaque PD with short rise and fall times (22.4 and 11.5 ms) and shows good flexibility. All the properties are comparable or superior to many reported transparent UV PDs, mainly attributed to the broad high UV-visible transmittance and the high conductivity of the ultrathin silver film.

Technology CAD (TCAD) Simulations of Mg2Si/Si Heterojunction Photodetector Based on the Thickness Effect

Research on infrared detectors has been widely reported in the literature. For infrared detectors, PbS, InGaAs, PbSe, InSb, and HgxCd1-xTe materials are the most widely used and have been explored for photodetection applications. However, these are toxic and harmful substances which are not conducive to the sustainable development of infrared detectors and are not eco-friendly. Mg2Si is a green, healthy, and sustainable semiconductor material that has the potential to replace these toxic and damaging photoelectric materials, making photoelectric detectors (PDs) green, healthy, and sustainable. In this work, we report on the results of our simulation studies on the PN junction Mg2Si/Si heterojunction PD. A model structure of Mg2Si/Si heterojunction PD has been built. The effects of Mg2Si and Si layer thickness on the optical and electrical performance of Mg2Si/Si heterojunction PD are discussed. For the purpose of this analysis, we consider electrical performance parameters such as I-V curve, external quantum efficiency (EQE), responsivity, noise equivalent power (NEP), detectivity, on-off ratio, response time, and recovery time. The simulation results show that the Mg2Si/Si heterojunction PD shows optimum performance when the thickness of Si and Mg2Si layers are 300 nm and 280 nm, respectively. For the optimized structure, the reverse breakdown voltage was found to be -23.61 V, the forward conduction voltage was 0.51 V, the dark current was 5.58 × 10-13 A, and the EQE was 88.98%. The responsivity was found to be 0.437 A/W, the NEP was 6.38 × 10-12 WHz1/2, and the detectivity was 1.567 × 1011 Jones. With the on-off ratio of 1566, the response time was found to be 0.76 ns and the recovery time was 5.75 ns. The EQE and responsivity peak wavelength of PD show a redshift as the thickness of Mg2Si increases. The Mg2Si heterojunction PD can effectively detect infrared light in the wavelength range of 400 to 1400 nm. The simulation results can be utilized to drive the development of green Mg2Si/Si heterojunction PD in the future.

Effects of Seed-Layer N2O Plasma Treatment on ZnO Nanorod Based Ultraviolet Photodetectors: Experimental Investigation with Two Different Device Structures

The crystalline quality of ZnO NR (nanorod) as a sensing material for visible blind ultraviolet PDs (photodetectors) critically depends on the SL (seed layer) material of properties, which is a key to high-quality nanocrystallite growth, more so than the synthesis method. In this study, we fabricated two different device structures of a gateless AlGaN/GaN HEMT (high electron mobility transistor) and a photoconductive PD structure with an IDE (interdigitated electrode) pattern implemented on a PET (polyethylene terephthalate) flexible substrate, and investigated the impact on device performance through the SL N₂O plasma treatment. In case of HEMT-based PD, the highest current on-off ratio (~7) and spectral responsivity R (~1.5 × 10⁵ A/W) were obtained from the treatment for 6 min, whereas the IDE pattern-based PD showed the best performance (on-off ratio = ~44, R = ~69 A/W) from the treatment for 3 min and above, during which a significant etch damage on PET substrates was produced. This improvement in device performance was due to the enhancement in NR crystalline quality as revealed by our X-ray diffraction, photoluminescence, and microanalysis.

The effect of electrode shape on Schottky barrier and electric field distribution of flexible ZnO photodiode

In this study, the effect of electrode shape difference on the height of the Schottky barrier and the electric field in flexible photodiodes (PDs) has been investigated. For this purpose, three different electrode designs were prepared on three flexible FR4 layers that were coated with Zinc Oxide (ZnO). The printing circuit board (PCB) method was used to create these copper electrodes. The asymmetry of the PD electrodes and the difference in the height of the Schottky barrier has led to the creation of self-powered PDs. The effect of the amount and shape of the distribution of internal electric fields generated in the PDs and its effect on the parameters of the PDs has been investigated with the help of simulations performed in COMSOL software. The photocurrent of the sample with circular and rectangular electrodes was equal to 470 µA in 15 V bias, which was twice as good as a sample with an interdigitated MSM structure. Also, this sample had the best response time among these three samples, which was equal to 440 ms.

Enhanced-Performance Self-Powered Solar-Blind UV-C Photodetector Based on n-ZnO Quantum Dots Functionalized by p-CuO Micro-pyramids

Smart solar-blind UV-C band photodetectors suffer from low responsivity in a self-powered mode. Here, we address this issue by fabricating a novel enhanced solar-blind UV-C photodetector array based on solution-processed n-ZnO quantum dots (QDs) functionalized by p-CuO micro-pyramids. Self-assembled catalyst-free p-CuO micro-pyramid arrays are fabricated on a pre-ablated Si substrate by pulsed laser deposition without a need for a catalyst layer or seeding, while the solution-processed n-ZnO QDs are synthesized by the femtosecond-laser ablation in liquid technique. The photodetector is fabricated by spray-coating ZnO QDs on a CuO micro-pyramid array. The photodetector performance is optimized via a p-n junction structure as both p-ZnO QDs and p-CuO micro-pyramid layers are characterized by wide band gap energies. Two photodetectors (with and without CuO micro-pyramids) are fabricated to show the role of p-CuO in enhancing the device performance. The n-ZnO QD/p-CuO micro-pyramid/Si photodetector is characterized by a superior photo-responsivity of ∼956 mA/W at 244 nm with a faster photoresponse (<80 ms) and 260 nm cut-off compared to ZnO QDs/Si photodetectors, confirming that the p-CuO micro-pyramids enhance the device performance. The self-powered photoresponse with a high photo-responsivity of ∼29 mA/W is demonstrated. These high-responsivity solar-bind UV-C photodetector arrays can be used for a wide range of applications.

Flexible ultraviolet photodetector based on single ZnO microwire/polyaniline heterojunctions

Flexible ultraviolet (UV) photodetectors are considered as potential building blocks for future-oriented photoelectric applications such as flexible optical communication, image sensors, wearable devices and so on. In this work, high-performance UV photodetector was fabricated via a facile combination of single ZnO microwire (MW) and p-type polyaniline. Due to the formation of effective organic/inorganic p-n junction, the as-prepared flexible UV photodetector based on ZnO MW/polyaniline hybrid heterojunction exhibits high performance (responsivity ∼ 60 mA/W and detectivity ∼ 2.0 ×10¹¹ Jones) at the reverse bias of -1 V under the UV illumination. The ZnO MW/polyaniline photodetector displays short response/recovery times (∼ 0.44 s/∼ 0.42 s), which is less than that of most reported UV photodetectors based on ZnO/polymer heterojunction. The fast response speed and recovery speed can be attributed to the high crystallinity of ZnO MW, built-in electric field in space-charge region and the passivation of oxygen traps on the surface. Further, the photodetector using ZnO MW/polyaniline junctions shows excellent flexibility and stability under bent conditions. This work opens a new way to design next-generation high-performance, low-cost and flexible optoelectronic devices for lab-on-a-chip applications.

Improved responsivity of MgZnO film ultraviolet photodetectors modified with vertical arrays ZnO nanowires by light trapping effect

The light trapping effect of ZnO nanowires (NWs) is attracting increasing attention as it effectively enhances the photoelectric effect. In this paper, high-density ZnO NWs are grown on a metal-semiconductor-metal structure MgZnO film UV photodetector (PD) as a light trapping unit. The photogenerated carriers diffuse along the longitudinal axis of the ZnO NWs, then diffuse onto the thin film and are collected by an applied bias electrode. When the device is connected to the NWs, the responsivity is about 12 times higher than that of the pure MgZnO film UV PD with a large light-dark current ratio (4.93 × 10⁴). The array structure of the ZnO NWs enhances the number of photogenerated carriers at the top interface and provides a longer optical path length and a larger surface area. The resulting light trapping effect endows the device with excellent photoelectric properties. In this work, the introduction of NWs not only fundamentally improves the performance of the MgZnO thin film UV PD, but the resulting photodetector also demonstrates a sharp contrast between light trapping UV PD and the MgZnO thin film UV PD.

Boosting the performance of ZnO microrod metal-semiconductor-metal photodetectors via surface capping of thin amorphous Al2O3 shell layer

1D ZnO nanostructures have been widely explored due to their potential applications in ultraviolet (UV) region photodetectors because of their unique structural and optoelectronic properties. However, a large number of surface defect states leading to a noticeable dark current hinders their practical applications in UV photodetection. In this work, we have shown improved ZnO/Al₂O₃ core-shell microrod photodetectors, whose performance is significantly enhanced by defect passivation and the introduction of trap states by atomic layer deposition grown thin amorphous Al₂O₃ shell layer, as evidenced by steady-state and transient photoluminescence investigations. The photodetectors demonstrated suppressed dark current and increased photocurrent after capping the Al₂O₃ layer. Specifically, the ZnO/Al₂O₃ core-shell microrod photodetector exhibited a photoresponsivity as high as 0.019 A/(W cm^-2) with the dark current as low as ∼1 × 10^-11 A, and a high I _light/I _dark ratio of ∼10⁴ under relatively weak light illumination (∼10 μW cm^-2). The results presented in this work provide valuable pathways to boost the performance of 1D ZnO microrod-based photodetectors for future practical applications.

Nanoarchitectonics for Wide Bandgap Semiconductor Nanowires: Toward the Next Generation of Nanoelectromechanical Systems for Environmental Monitoring

Semiconductor nanowires are widely considered as the building blocks that revolutionized many areas of nanosciences and nanotechnologies. The unique features in nanowires, including high electron transport, excellent mechanical robustness, large surface area, and capability to engineer their intrinsic properties, enable new classes of nanoelectromechanical systems (NEMS). Wide bandgap (WBG) semiconductors in the form of nanowires are a hot spot of research owing to the tremendous possibilities in NEMS, particularly for environmental monitoring and energy harvesting. This article presents a comprehensive overview of the recent progress on the growth, properties and applications of silicon carbide (SiC), group III-nitrides, and diamond nanowires as the materials of choice for NEMS. It begins with a snapshot on material developments and fabrication technologies, covering both bottom-up and top-down approaches. A discussion on the mechanical, electrical, optical, and thermal properties is provided detailing the fundamental physics of WBG nanowires along with their potential for NEMS. A series of sensing and electronic devices particularly for environmental monitoring is reviewed, which further extend the capability in industrial applications. The article concludes with the merits and shortcomings of environmental monitoring applications based on these classes of nanowires, providing a roadmap for future development in this fast-emerging research field.

A novel and stable ultraviolet and infrared intensity sensor in impedance/capacitance modes fabricated from degraded CH3NH3PbI3-xClx perovskite materials

The present situation of COVID-19 diverted our focus towards utilizing the degraded solar cells for sensor application, this will help in global energy harvesting. So, here is our successful effort to reuse already degraded solar cells as ultraviolet (UV) and infrared (IR) sensor. The spin-coated perovskite (CH3NH3PbI3-XClX) has been already tested for visible light spectrum, as an extension to that now it is utilized as UV and IR intensity sensors to cover the whole spectrum. The employed CH3NH3PbI3-XClX material was used after its efficiency loss has been reached to a saturation point in photovoltaic devices. Each deposited layer was investigated from UV to the IR absorption spectrum for deepening study through UV-vis spectroscopy. In the sandwiched architecture possessing FTO/PEDOT: PSS/Perovskite/PC61BM/CdS/Au symmetry, the perovskite film has been employed as an absorbent layer, however, other layers participation also plays a key role. The resultant device yielded very good sensing performance because of the enhanced excitons generation which is attributed to the precise selection of the interfacial materials, e.g. CdS and PC61BM as an ETM and PEDOT: PSS as HTM. The impedance and capacitance of the devices within 0.01-200 kHz under varied UV and IR illumination intensities were investigated. Measurements showed that as the intensity of the light increased i.e., UV (0-200 W/m2) and IR (0-5800 W/m2), impedance decreased while capacitance increased. The current results are attributed to the increase in the concentration of charges i.e., electron-hole pairs generation depending on the built-in capacitance and frequency of the charges.