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Tian S, Sun D, Chen F, Wang H, Li C, Yin C. Recent progress in plasma modification of 2D metal chalcogenides for electronic devices and optoelectronic devices. Nanoscale 2024; 16:1577-1599. [PMID: 38173407 DOI: 10.1039/d3nr05618j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/05/2024]
Abstract
Two-dimensional metal chalcogenides (2D MCs) present a great opportunity for overcoming the size limitation of traditional silicon-based complementary metal-oxide-semiconductor (CMOS) devices. Controllable modulation compatible with CMOS processes is essential for the improvement of performance and the large-scale applications of 2D MCs. In this review, we summarize the recent progress in plasma modification of 2D MCs, including substitutional doping, defect engineering, surface charge transfer, interlayer coupling modulation, thickness control, and nano-array pattern etching in the fields of electronic devices and optoelectronic devices. Finally, challenges and outlooks for plasma modulation of 2D MCs are presented to offer valuable references for future studies.
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Affiliation(s)
- Siying Tian
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
- University of Chinese Academy of Sciences, No. 19 A Yuquan Road, Beijing 100049, China
| | - Dapeng Sun
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
| | - Fengling Chen
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
| | - Honghao Wang
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
- University of Chinese Academy of Sciences, No. 19 A Yuquan Road, Beijing 100049, China
| | - Chaobo Li
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
| | - Chujun Yin
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
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Lai H, Lu Z, Lu Y, Yao X, Xu X, Chen J, Zhou Y, Liu P, Shi T, Wang X, Xie W. Fast, Multi-Bit, and Vis-Infrared Broadband Nonvolatile Optoelectronic Memory with MoS 2 /2D-Perovskite Van der Waals Heterojunction. Adv Mater 2023; 35:e2208664. [PMID: 36453570 DOI: 10.1002/adma.202208664] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2022] [Revised: 11/23/2022] [Indexed: 06/17/2023]
Abstract
Nonvolatile optoelectronic memory (NVOM) integrating the functions of optical sensing and long-term memory can efficiently process and store a large amount of visual scene information, which has become the core requirement of multiple intelligence scenarios. However, realizing NVOM with vis-infrared broadband response is still challenging. Herein, the room temperature vis-infrared broadband NVOM based on few-layer MoS2 /2D Ruddlesden-Popper perovskite (2D-RPP) van der Waals heterojunction is realized. It is found that the 2D-RPP converts the initial n-type MoS2 into p-type and facilitates hole transfer between them. Furthermore, the 2D-RPP rich in interband states serves as an effective electron trapping layer as well as broadband photoresponsive layer. As a result, the dielectric-free MoS2 /2D-RPP heterojunction enables the charge to transfer quickly under external field, which enables a large memory window (104 V), fast write speed of 20 µs, and optical programmable characteristics from visible light (405 nm) to telecommunication wavelengths (i.e., 1550 nm) at room temperature. Trapezoidal optical programming can produce up to 100 recognizable states (>6 bits), with operating energy as low as 5.1 pJ per optical program. These results provide a route to realize fast, low power, multi-bit optoelectronic memory from visible to the infrared wavelength.
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Affiliation(s)
- Haojie Lai
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong, 510632, P. R. China
| | - Zhengli Lu
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong, 510632, P. R. China
| | - Yueheng Lu
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong, 510632, P. R. China
| | - Xuanchun Yao
- Instrumental Analysis and Research Center, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Xin Xu
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong, 510632, P. R. China
| | - Jian Chen
- Instrumental Analysis and Research Center, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Yang Zhou
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong, 510632, P. R. China
| | - Pengyi Liu
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong, 510632, P. R. China
| | - Tingting Shi
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong, 510632, P. R. China
| | - Xiaomu Wang
- School of Electronic Science and Technology, Nanjing University, Nanjing, Jiangsu, 210093, P. R. China
| | - Weiguang Xie
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong, 510632, P. R. China
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Jinan University, Guangzhou, Guangdong, 510632, P. R. China
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Lu YY, Yu HC, Wang YX, Hung CK, Chen YR, Jhou J, Yen PTW, Hsu JH, Sankar R. Optical determination of layered-materials InSe thickness via RGB contrast method and regression analysis. Nanotechnology 2022; 33:485702. [PMID: 35998580 DOI: 10.1088/1361-6528/ac8bda] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/21/2022] [Accepted: 08/22/2022] [Indexed: 06/15/2023]
Abstract
Indium selenide (InSe) features intriguing thickness-dependent optoelectronic properties, and a simple, and precise way to identify the thickness is essential for the rapid development of InSe research. Here, a red, green, and blue (RGB) color contrast method with regression analysis for quantitative correlation of three optical contrasts from RGB channels with the InSe thickness (1-35 nm), is demonstrated. The lower accuracy of the thickness identification obtained from the individual channels was discussed. Moreover, the effective refractive indices in the three RGB regions can be extracted from the Fresnel equation and numerical analysis by finding the best fit to the experimental optical contrast. After further consideration of the wavelength-dependent refractive indices, the slope of the regression line between the estimated thickness and that obtained from the atomic force microscope was improved from 1.59 ± 0.05 to 0.97 ± 0.02. The complex refractive index spectra of InSe (1-10 layers) generated fromab initionumerical calculation results were also adopted to identify the InSe thickness. Compared to dispersion, the evolution of the band structure had less effect on thickness identification. This work could be extended to other layered materials, facilitate the thickness-dependent study of layered materials, and expedite the realization of their practical applications.
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Affiliation(s)
- Yi-Ying Lu
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Hsiao-Ching Yu
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - You-Xin Wang
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Chih-Keng Hung
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - You-Ren Chen
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Jie Jhou
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Peter Tsung-Wen Yen
- Center for Crystal researches, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Jui-Hung Hsu
- Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Raman Sankar
- Institute of Physics, Academia Sinica, Taipei 11529, Taiwan
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Lu YY, Yang YL, Chuang PY, Jhou J, Hsu JH, Hsieh SH, Chen CH. Operando photoelectron spectroscopy analysis of graphene field-effect transistors. Nanotechnology 2022; 33:475702. [PMID: 35940064 DOI: 10.1088/1361-6528/ac87b6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2022] [Accepted: 08/07/2022] [Indexed: 06/15/2023]
Abstract
In this study, operando photoelectron spectroscopy was used to characterize the performance of graphene field-effect transistors under working conditions. By sweeping the back-gate voltages, the carrier concentration of the graphene channel on the 150 nm Si3N4/Si substrate was tuned. From the C1s core level spectra acquired under the application of different gate voltages, the binding energy shifts caused by electric-field effects were obtained and analyzed. Together with the C1s peak shape information and the photoluminescence spectrum of the Si3N4/Si substrate, the presence of local potential across the x-ray beam spot associated with defects and gate leakage current in amorphous Si3N4was identified. The presence of defects in Si3N4/Si substrate could not only screen the partial electric field generated by the back gate but also serve as long-range scattering centers to the carriers, thus affecting charge transport in the graphene channel. Our findings will help further investigate the dielectric/graphene interface properties and accelerate the utilization of graphene in real device applications.
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Affiliation(s)
- Yi-Ying Lu
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
| | - Yu-Lun Yang
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
| | - Pin-Yi Chuang
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
| | - Jie Jhou
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
| | - Jui-Hung Hsu
- Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
| | - Shang-Hsien Hsieh
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Chia-Hao Chen
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
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