Suppressed Out-of-Plane Polarizability of Free Excitons in Monolayer WSe2

Harmonic to anharmonic tuning of moiré potential leading to unconventional Stark effect and giant dipolar repulsion in WS2/WSe2 heterobilayer

Excitonic states trapped in harmonic moiré wells of twisted heterobilayers is an intriguing testbed for exploring many-body physics. However, the moiré potential is primarily governed by the twist angle, and its dynamic tuning remains a challenge. Here we demonstrate anharmonic tuning of moiré potential in a WS2/WSe2 heterobilayer through gate voltage and optical power. A gate voltage can result in a local in-plane perturbing field with odd parity around the high-symmetry points. This allows us to simultaneously observe the first (linear) and second (parabolic) order Stark shift for the ground state and first excited state, respectively, of the moiré trapped exciton - an effect opposite to conventional quantum-confined Stark shift. Depending on the degree of confinement, these excitons exhibit up to twenty-fold gate-tunability in the lifetime (100 to 5 ns). Also, exciton localization dependent dipolar repulsion leads to an optical power-induced blueshift of ~ 1 meV/μW - a five-fold enhancement over previous reports.

In-Plane Electric-Field-Induced Orbital Hybridization of Excitonic States in Monolayer WSe_{2}

The giant exciton binding energy and the richness of degrees of freedom make monolayer transition metal dichalcogenide an unprecedented playground for exploring exciton physics in 2D systems. Thanks to the well-energetically separated excitonic states, the response of the discrete excitonic states to the electric field could be precisely examined. Here we utilize the photocurrent spectroscopy to probe excitonic states under a static in-plane electric field. We demonstrate that the in-plane electric field leads to a significant orbital hybridization of Rydberg excitonic states with different angular momentum (especially orbital hybridization of 2s and 2p) and, consequently, optically actives 2p-state exciton. Besides, the electric-field controlled mixing of the high lying exciton state and continuum band enhances the oscillator strength of the discrete excited exciton states. This electric field modulation of the excitonic states in monolayer TMDs provides a paradigm of the manipulation of 2D excitons for potential applications of the electro-optical modulation in 2D semiconductors.

Dielectrics for Two-Dimensional Transition-Metal Dichalcogenide Applications

Despite over a decade of intense research efforts, the full potential of two-dimensional transition-metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration techniques restrict device performances and their commercial applications. Conventional dielectric integration techniques for bulk semiconductors are difficult to adapt for atomically thin two-dimensional materials. This review provides a brief introduction into various common and emerging dielectric synthesis and integration techniques and discusses their applicability for 2D transition metal dichalcogenides. Dielectric integration for various applications is reviewed in subsequent sections including nanoelectronics, optoelectronics, flexible electronics, valleytronics, biosensing, quantum information processing, and quantum sensing. For each application, we introduce basic device working principles, discuss the specific dielectric requirements, review current progress, present key challenges, and offer insights into future prospects and opportunities.

Optical Anisotropy and Excitons in MoS2 Interfaces for Sensitive Surface Plasmon Resonance Biosensors

The use of ultra-thin spacer layers above metal has become a popular approach to the enhancement of optical sensitivity and immobilization efficiency of label-free SPR sensors. At the same time, the giant optical anisotropy inherent to transition metal dichalcogenides may significantly affect characteristics of the studied sensors. Here, we present a systematic study of the optical sensitivity of an SPR biosensor platform with auxiliary layers of MoS₂. By performing the analysis in a broad spectral range, we reveal the effect of exciton-driven dielectric response of MoS₂ and its anisotropy on the sensitivity characteristics. The excitons are responsible for the decrease in the optimal thickness of MoS₂. Furthermore, despite the anisotropy being at record height, it affects the sensitivity only slightly, although the effect becomes stronger in the near-infrared spectral range, where it may lead to considerable change in the optimal design of the biosensor.

Excellent response to near ultraviolet light and large intervalley scatterings of electrons in 2D SnS2

Tin disulfide (SnS₂) has attracted much attention as a novel two dimensional material due to its potential applications in electronics and optoelectronics. In this work, we investigated the optical properties of ultra-thin SnS₂ film samples (∼8 nm) via spectroscopic ellipsometry, and found that SnS₂ maintains a relatively high imaginary part of the dielectric constant (ε₂) in the range of 256-377 nm indicating high optical response. The carrier transport properties of SnS₂ were investigated considering full mode-resolved electron-phonon couplings, which reveal that the intervalley scatterings between degenerate valley (peaks) states via the fifth optical branch phonons play a dominant role in electron scattering, while ZA phonons dominate the hole scattering. The calculated electron mobility is ∼50 cm² V^-1 s^-1 which is close to previously reported experimental results. By considering full el-ph interactions based on the rigid-band approximation, the maximum value of the thermoelectric figure of merit zT reaches 0.43 at 700 K. Our work not only reveals the promising applications of SnS₂ in the fields of electronics and optoelectronics, but also showcases the computational framework for precise calculations of thermoelectric performances.

Interlayer exciton mediated second harmonic generation in bilayer MoS2

Second-harmonic generation (SHG) is a non-linear optical process, where two photons coherently combine into one photon of twice their energy. Efficient SHG occurs for crystals with broken inversion symmetry, such as transition metal dichalcogenide monolayers. Here we show tuning of non-linear optical processes in an inversion symmetric crystal. This tunability is based on the unique properties of bilayer MoS2, that shows strong optical oscillator strength for the intra- but also interlayer exciton resonances. As we tune the SHG signal onto these resonances by varying the laser energy, the SHG amplitude is enhanced by several orders of magnitude. In the resonant case the bilayer SHG signal reaches amplitudes comparable to the off-resonant signal from a monolayer. In applied electric fields the interlayer exciton energies can be tuned due to their in-built electric dipole via the Stark effect. As a result the interlayer exciton degeneracy is lifted and the bilayer SHG response is further enhanced by an additional two orders of magnitude, well reproduced by our model calculations. Since interlayer exciton transitions are highly tunable also by choosing twist angle and material combination our results open up new approaches for designing the SHG response of layered materials.

Electrical tuning of optically active interlayer excitons in bilayer MoS2

Interlayer (IL) excitons, comprising electrons and holes residing in different layers of van der Waals bonded two-dimensional semiconductors, have opened new opportunities for room-temperature excitonic devices. So far, two-dimensional IL excitons have been realized in heterobilayers with type-II band alignment. However, the small oscillator strength of the resulting IL excitons and difficulties with producing heterostructures with definite crystal orientation over large areas have challenged the practical applicability of this design. Here, following the theoretical prediction and recent experimental confirmation of the existence of IL excitons in bilayer MoS₂, we demonstrate the electrical control of such excitons up to room temperature. We find that the IL excitonic states preserve their large oscillator strength as their energies are manipulated by the electric field. We attribute this effect to the mixing of the pure IL excitons with intralayer excitons localized in a single layer. By applying an electric field perpendicular to the bilayer MoS₂ crystal plane, excitons with IL character split into two peaks with an X-shaped field dependence as a clear fingerprint of the shift of the monolayer bands with respect to each other. Finally, we demonstrate the full control of the energies of IL excitons distributed homogeneously over a large area of our device.

Piezoelectric Modulation of Excitonic Properties in Monolayer WSe2 under Strong Dielectric Screening

We investigate the interaction of excitons in monolayer WSe₂ with the piezoelectric field of surface acoustic wave (SAW) at room temperature using photoluminescence (PL) spectroscopy and report a large in-plane exciton polarizability of 8.43 ± 0.18 × 10^-6 Dm/V. Such large polarizability arises due to the strong dielectric screening from the piezoelectric substrate. In addition, we show that the exciton-piezoelectric field interaction and population distribution between neutral excitons and trions can be optically manipulated by controlling the field screening using photogenerated free carriers. Finally, we model the broadening of the exciton PL line width and report that the interaction is dominated by type-II band edge modulation, because of the in-plane electric field in the system. The results help understand the interaction of excitons in monolayer transition-metal dichalcogenides that will aid in controlled manipulation of excitonic properties for applications in sensing, detection, and on-chip communication.

Giant Stark splitting of an exciton in bilayer MoS2

Transition metal dichalcogenides (TMDs) constitute a versatile platform for atomically thin optoelectronics devices and spin-valley memory applications. In monolayer TMDs the optical absorption is strong, but the transition energy cannot be tuned as the neutral exciton has essentially no out-of-plane static electric dipole^1,2. In contrast, interlayer exciton transitions in heterobilayers are widely tunable in applied electric fields, but their coupling to light is substantially reduced. In this work, we show tuning over 120 meV of interlayer excitons with a high oscillator strength in bilayer MoS₂ due to the quantum-confined Stark effect³. We optically probed the interaction between intra- and interlayer excitons as they were energetically tuned into resonance. Interlayer excitons interact strongly with intralayer B excitons, as demonstrated by a clear avoided crossing, whereas the interaction with intralayer A excitons is substantially weaker. Our observations are supported by density functional theory (DFT) calculations, which include excitonic effects. In MoS₂ trilayers, our experiments uncovered two types of interlayer excitons with and without in-built electric dipoles. Highly tunable excitonic transitions with large in-built dipoles and oscillator strengths will result in strong exciton-exciton interactions and therefore hold great promise for non-linear optics with polaritons.

Electronic Polarizability as the Fundamental Variable in the Dielectric Properties of Two-Dimensional Materials

The dielectric constant, which defines the polarization of the media, is a key quantity in condensed matter. It determines several electronic and optoelectronic properties important for a plethora of modern technologies from computer memory to field effect transistors and communication circuits. Moreover, the importance of the dielectric constant in describing electromagnetic interactions through screening plays a critical role in understanding fundamental molecular interactions. Here, we show that despite its fundamental transcendence, the dielectric constant does not define unequivocally the dielectric properties of two-dimensional (2D) materials due to the locality of their electrostatic screening. Instead, the electronic polarizability correctly captures the dielectric nature of a 2D material which is united to other physical quantities in an atomically thin layer. We reveal a long-sought universal formalism where electronic, geometrical, and dielectric properties are intrinsically correlated through the polarizability, opening the door to probe quantities yet not directly measurable including the real covalent thickness of a layer. We unify the concept of dielectric properties in any material dimension finding a global dielectric anisotropy index defining their controllability through dimensionality.

Polarity Tunable Trionic Electroluminescence in Monolayer WSe2

Monolayer WSe₂ exhibits luminescence arising from various types of exciton complexes due to strong many-body effects. Here, we demonstrate selective electrical excitation of positive and negative trions in van der Waals metal-insulator-semiconductor (MIS) heterostructure consisting of few-layer graphene (FLG), hexagonal boron nitride (hBN), and monolayer WSe₂. Intentional unbalanced injection of electrons and holes is achieved via field-emission tunneling and electrostatic accumulation. The device exhibits planar electroluminescence from either positive trion X⁺ or negative trion X^- depending on the bias conditions. We show that hBN serves as a tunneling barrier material allowing selective injection of electron or holes into WSe₂ from FLG layer. Our observation offers prospects for hot carrier injection, trion manipulation, and on-chip excitonic devices based on two-dimensional semiconductors.