Ultrafast Catalyst-Free Graphene Growth on Glass Assisted by Local Fluorine Supply

Synthesis Landscapes for Ammonia Borane Chemical Vapor Deposition of h-BN and BNNT: Unraveling Reactions and Intermediates from First-Principles

Planar hexagonal boron nitride (h-BN) and tubular BN nanotube (BNNT), known for their superior mechanical and thermal properties, as well as wide electronic band gap, hold great potential for nanoelectronic and optoelectronic devices. Chemical vapor deposition has demonstrated the best way to scalable synthesis of high-quality BN nanomaterials. Yet, the atomistic understanding of reactions from precursors to product-material remains elusive, posing challenges for experimental design. Here, performing first-principles calculations and ab initio molecular simulations, we explore pyrolytic decomposition pathways of the most used precursor ammonia borane (H3BNH3, AB) to BN, in gas-phase and on Ni(111) or amorphous boron (for BNNT growth) surfaces, for comparison. It reveals that in the gas phase, a pair of AB molecules cooperate to form intermediate NH3 and ammonia diborane, which further dissociates into H2BNH2, accompanied by critical BH4- and NH4+ ions. These ions act as H scavengers facilitating H2BNH2 dehydrogenation into HBNH. The consequent HBNH directly feeds BN flake growth by reacting with the crystal edge, while the addition of H2BNH2 to the edge is prohibited at 1500 K. In contrast, on Ni and boron surfaces, AB monomer dehydrogenates stepwise, deeper, yielding BNH and BN dimer as the primary building unit. Our study maps out three typical experimental conditions regarding the dissociation of AB-precursor, providing insights into the underlying reaction mechanisms of gas-phase precursors, to help as guidelines for the experimental growth of BN nanomaterials.

Recent Advances in Transfer-Free Synthesis of High-Quality Graphene

High-quality graphene obtained by chemical vapor deposition (CVD) technique holds significant importance in constructing innovative electronic and optoelectronic devices. Direct growth of graphene over target substrates readily eliminates cumbersome transfer processes, offering compatibility with practical application scenarios. Recent years have witnessed growing strategic endeavors in the preparation of transfer-free graphene with favorable quality. Nevertheless, timely review articles on this topic are still scarce. In this contribution, a systematic summary of recent advances in transfer-free synthesis of high-quality graphene on insulating substrates, with a focus on discussing synthetic strategies designed by elevating reaction temperature, confining gas flow, introducing growth promotor and regulating substrate surface is presented.

Fluorobenzene and Water-Promoted Rapid Growth of Vertical Graphene Arrays by Electric-Field-Assisted PECVD

Vertical graphene (VG) arrays show exposed sharp edges, ultra-low electrical resistance, large surface-to-volume ratio, and low light reflectivity, thus having great potential in emerging applications, including field emission, sensing, energy storage devices, and stray light shields. Although plasma enhanced chemical vapor deposition (PECVD) is regarded as an effective approach for the synthesis of VG, it is still challenging to increase the growth rate and height of VG arrays simultaneously. Herein, a fluorobenzene and water-assisted method to rapidly grow VG arrays in an electric field-assisted PECVD system is developed. Fluorobenzene-based carbon sources are used to produce highly electronegative fluorine radicals to accelerate the decomposition of methanol and promote the growth of VG. Water is applied to produce hydroxyl radicals in order to etch amorphous carbon and accelerate the VG growth. The fastest growth rate can be up to 15.9 µm h^-1 . Finally, VG arrays with a height of 144 µm are successfully synthesized at an average rate of 14.4 µm h^-1 . As a kind of super black material, these VG arrays exhibit an ultra-low reflectance of 0.25%, showing great prospect in stray light shielding.

Retrieving Grain Boundaries in 2D Materials

The coalescence of randomly distributed grains with different crystallographic orientations can result in pervasive grain boundaries (GBs) in 2D materials during their chemical synthesis. GBs not only are the inherent structural imperfection that causes influential impacts on structures and properties of 2D materials, but also have emerged as a platform for exploring unusual physics and functionalities stemming from dramatic changes in local atomic organization and even chemical makeup. Here, recent advances in studying the formation mechanism, atomic structures, and functional properties of GBs in a range of 2D materials are reviewed. By analyzing the growth mechanism and the competition between far-field strain and local chemical energies of dislocation cores, a complete understanding of the rich GB morphologies as well as their dependence on lattice misorientations and chemical compositions is presented. Mechanical, electronic, and chemical properties tied to GBs in different materials are then discussed, towards raising the concept of using GBs as a robust atomic-scale scaffold for realizing tailored functionalities, such as magnetism, luminescence, and catalysis. Finally, the future opportunities in retrieving GBs for making functional devices and the major challenges in the controlled formation of GB structures for designed applications are commented.

Centimetre-scale single crystal α-MoO3: oxygen assisted self-standing growth and low-energy consumption synaptic devices

High-density storage and neuromorphic devices based on 2D materials are hindered by large-scale growth. Moreover, the lack of a mature mechanism makes it difficult to obtain high-quality single crystals in large-scale 2D materials. In this work, we prepared a centimeter-scale single crystal α-MoO₃via an oxygen assisted substrate-free self-standing growth method and mechanism and constructed high-performance synaptic devices based on the centimeter-scale α-MoO₃. The oxygen assisted growth mechanism of α-MoO₃ was developed from the periodic bond chain theory. The large-scale α-MoO₃ is up to 2 cm and exhibits high homogeneity and single crystalline characteristic. Furthermore, with an optimized oxygen partial pressure (18%), the centimeter-scale α-MoO₃ makes the as-prepared memristor achieve continuous conductance modulation. Moreover, the trap-controlled electron conducting mechanism of the memristor was demonstrated through I-V curve fitting analysis at various temperatures, in which the high resistance state section demonstrates space-charge-limited conduction (SCLC) mode. Moreover, the as-prepared α-MoO₃ memristors exhibit low-energy consumption and well emulate the essential synaptic behaviors including excitatory/inhibitory postsynaptic current, paired-pulse facilitation and long-term plasticity.

Direct-Chemical Vapor Deposition-Enabled Graphene for Emerging Energy Storage: Versatility, Essentiality, and Possibility

The direct chemical vapor deposition (CVD) technique has stimulated an enormous scientific and industrial interest to enable the conformal growth of graphene over multifarious substrates, which readily bypasses tedious transfer procedure and empowers innovative materials paradigm. Compared to the prevailing graphene materials (i.e., reduced graphene oxide and liquid-phase exfoliated graphene), the direct-CVD-enabled graphene harnesses appealing structural advantages and physicochemical properties, accordingly playing a pivotal role in the realm of electrochemical energy storage. Despite conspicuous progress achieved in this frontier, a comprehensive overview is still lacking by far and the synthesis-structure-property-application nexus of direct-CVD-enabled graphene remains elusive. In this topical review, rather than simply compiling the state-of-the-art advancements, the versatile roles of direct-CVD-enabled graphene are itemized as (i) modificator, (ii) cultivator, (iii) defender, and (iv) decider. Furthermore, essential effects on the performance optimization are elucidated, with an emphasis on fundamental properties and underlying mechanisms. At the end, perspectives with respect to the material production and device fabrication are sketched, aiming to navigate the future development of direct-CVD-enabled graphene en-route toward pragmatic energy applications and beyond.

Chloroform-Assisted Rapid Growth of Vertical Graphene Array and Its Application in Thermal Interface Materials

With the continuous progress in electronic devices, thermal interface materials (TIMs) are urgently needed for the fabrication of integrated circuits with high reliability and performance. Graphene as a wonderful additive is often added into polymer to build composite TIMs. However, owing to the lack of a specific design of the graphene skeleton, thermal conductivity of graphene-based composite TIMs is not significantly improved. Here a chloroform-assisted method for rapid growth of vertical graphene (VG) arrays in electric field-assisted plasma enhanced chemical vapor deposition (PECVD) system is reported. Under the optimum intensity and direction of electric field and by introducing the highly electronegative chlorine into the reactor, the record growth rate of 11.5 µm h^-1 is achieved and VG with a height of 100 µm is successfully synthesized. The theoretical study for the first time reveals that the introduction of chlorine accelerates the decomposition of methanol and thus promotes the VG growth in PECVD. Finally, as an excellent filler framework in polymer matrix, VG arrays are used to construct a free-standing composite TIM, which yields a high vertical thermal conductivity of 34.2 W m^-1  K^-1 at the graphene loading of 8.6 wt% and shows excellent cooling effect in interfacial thermal dissipation of light emitting diode.

Ultrafast Growth of Highly Conductive Graphene Films by a Single Subsecond Pulse of Microwave

Currently, graphene films are expected to achieve real applications in various fields. However, the conventional synthesis methods still have intrinsic limitations, especially not being applicable on a surface with high curvature. Herein, an ultrafast synthesis method was developed for graphene and turbostratic graphite growth by a single subsecond pulse of microwaves generated by a household magnetron. We succeeded in growing high-quality around 10-layered turbostratic graphite in 0.16 s directly on the surface of an atomic force microscope probe and maintaining a tip curvature radius of less than 30 nm. The thus-produced probes showed high conductivity and tip durability. Moreover, turbostratic graphite film was also demonstrated to grow on the surface of dielectric Si flat substrates in a full coverage. Graphene can also grow on metallic Ni tips by this method. Our microwave ultrafast method can be used to grow high-quality graphene in a facile, efficient, and economical way.

Additive-Assisted Growth of Scaled and Quality 2D Materials

2D materials are increasingly becoming key components in modern electronics because of their prominent electronic and optoelectronic properties. The central and premise to the entire discipline of 2D materials lie in the high-quality and scaled preparations. The chemical vapor deposition (CVD) method offers compelling benefits in terms of scalability and controllability in shaping large-area and high-quality 2D materials. The past few years have witnessed development of numerous CVD growth strategies, with the use of additives attracting substantial attention in the production of scaled 2D crystals. This review provides an overview of different additives used in CVD growth of 2D materials, as well as a methodical demonstration of their vital roles. In addition, the intrinsic mechanisms of the production of scaled 2D crystals with additives are also discussed. Lastly, reliable guidance on the future design of optimal CVD synthesis routes is provided by analyzing the accessibility, pricing, by-products, controllability, universality, and commercialization of various additives.

Freestanding Graphene Fabric Film for Flexible Infrared Camouflage

Graphene films, fabricated by chemical vapor deposition (CVD) method, have exhibited superiorities in high crystallinity, thickness controllability, and large-scale uniformity. However, most synthesized graphene films are substrate-dependent, and usually fragile for practical application. Herein, a freestanding graphene film is prepared based on the CVD route. By using the etchable fabric substrate, a large-scale papyraceous freestanding graphene fabric film (FS-GFF) is obtained. The electrical conductivity of FS-GFF can be modulated from 50 to 2800 Ω sq^-1 by tailoring the graphene layer thickness. Moreover, the FS-GFF can be further attached to various shaped objects by a simple rewetting manipulation with negligible changes of electric conductivity. Based on the advanced fabric structure, excellent electrical property, and high infrared emissivity, the FS-GFF is thus assembled into a flexible device with tunable infrared emissivity, which can achieve the adaptive camouflage ability in complicated backgrounds. This work provides an infusive insight into the fabrication of large-scale freestanding graphene fabric films, while promoting the exploration on the flexible infrared camouflage textiles.

Outstanding elastic, electronic, transport and optical properties of a novel layered material C4F2: first-principles study

Motivated by very recent successful experimental transformation of AB-stacking bilayer graphene into fluorinated single-layer diamond (namely fluorinated diamane C₄F₂) [P. V. Bakharev, M. Huang, M. Saxena, S. W. Lee, S. H. Joo, S. O. Park, J. Dong, D. C. Camacho-Mojica, S. Jin, Y. Kwon, M. Biswal, F. Ding, S. K. Kwak, Z. Lee and R. S. Ruoff, Nat. Nanotechnol., 2020, 15, 59–66], we systematically investigate the structural, elastic, electronic, transport, and optical properties of fluorinated diamane C₄F₂ by using density functional theory. Our obtained results demonstrate that at the ground state, the lattice constant of C₄F₂ is 2.56 Å with chemical bonding between the C–C interlayer and intralayer bond lengths of about 1.5 Å which are close to the C–C bonding in the bulk diamond. Based on calculations for the phonon spectrum and ab initio molecular dynamics simulations, the structure of C₄F₂ is confirmed to be dynamically and thermally stable. C₄F₂ exhibits superior mechanical properties with a very high Young's modulus of 493.19 N m⁻¹. Upon fluorination, the formation of C–C bonding between graphene layers has resulted in a comprehensive alteration of electronic properties of C₄F₂. C₄F₂ is a direct semiconductor with a large band gap and phase transitions are found when a biaxial strain or external electric field is applied. Interestingly, C₄F₂ has very high electron mobility, up to 3.03 × 10³ cm² V⁻¹ s⁻¹, much higher than other semiconductor compounds. Our findings not only provide a comprehensive insight into the physical properties of C₄F₂ but also open up its applicability in nanoelectromechanical and optoelectronic devices.

Motivated by transformation of AB-stacking bilayer graphene into fluorinated single-layer diamond (fluorinated diamane C₄F₂), we investigate the structural, elastic, electronic, transport, and optical properties of fluorinated diamane C₄F₂ using density functional theory.

The Mechanism of Graphene Vapor-Solid Growth on Insulating Substrates

Wafer-scale single-crystal graphene film directly grown on insulating substrates via the chemical vapor deposition (CVD) method is desired for building high-performance graphene-based devices. In comparison with the well-studied mechanism of graphene growth on transition metal substrates, the lack of understanding on the mechanism of graphene growth on insulating surfaces greatly hinders the progress. Here, by using first-principles calculation, we systematically explored the absorption of various carbon species CH_x (x = 0, 1, 2, 3, 4) on three typical insulating substrates [h-BN, sapphire, and quartz] and reveal that graphene growth on an insulating surface is dominated by the reaction of active carbon species with the hydrogen-passivated graphene edges and thus is less sensitive to the type of the substrate. The dominating gas phase precursor, CH₃, plays two key roles in graphene CVD growth on an insulating substrate: (i) to feed the graphene growth and (ii) to remove excessive hydrogen atoms from the edge of graphene. The threshold reaction barriers for the growth of graphene armchair (AC) and zigzag (ZZ) edges were calculated as 3.00 and 1.94 eV, respectively; thus the ZZ edge grows faster than the AC one. Our theory successfully explained why the circumference of a graphene island grown on insulating substrates is generally dominated by AC edges, which is a long-standing puzzle of graphene growth. In addition, the very slow graphene growth rate on an insulating substrate is calculated and agrees well with existing experimental observations. The comprehensive insights on the graphene growth on insulating surfaces at the atomic scale provide guidance on the experimental design for high-quality graphene growth on insulating substrates.

Synthesis and Characterization of Free-Stand Graphene/Silver Nanowire/Graphene Nano Composite as Transparent Conductive Film with Enhanced Stiffness

As-grown graphene via chemical vapor deposition (CVD) has potential defects, cracks, and disordered grain boundaries induced by the synthesis and transfer process. Graphene/silver nanowire/graphene (Gr/AgNW/Gr) sandwich composite has been proposed to overcome these drawbacks significantly as the AgNW network can provide extra connections on graphene layers to enhance the stiffness and electrical conductivity. However, the existing substrate (polyethylene terephthalate (PET), glass, silicon, and so on) for composite production limits its application and mechanics behavior study. In this work, a vacuum annealing method is proposed and validated to synthesize the free-stand Gr/AgNW/Gr nanocomposite film on transmission electron microscopy (TEM) grids. AgNW average spacing, optical transmittance, and electrical conductivity are characterized and correlated with different AgNW concentrations. Atomic force microscope (AFM) indentation on the free-stand composite indicates that the AgNW network can increase the composite film stiffness by approximately 460% with the AgNW concentration higher than 0.6 mg/mL. Raman spectroscopy shows the existence of a graphene layer and the disturbance of the AgNW network. The proposed method provides a robust way to synthesize free-stand Gr/AgNW/Gr nanocomposite and the characterization results can be utilized to optimize the nanocomposite design for future applications.

Catalytic methane technology for carbon nanotubes and graphene

The catalytic methane technology for the production of carbon nanotubes and graphene is summarized in this review.