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Olšteins D, Nagda G, Carrad DJ, Beznasyuk DV, Petersen CEN, Martí-Sánchez S, Arbiol J, Jespersen TS. Cryogenic multiplexing using selective area grown nanowires. Nat Commun 2023; 14:7738. [PMID: 38007553 PMCID: PMC10676361 DOI: 10.1038/s41467-023-43551-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/31/2023] [Accepted: 11/13/2023] [Indexed: 11/27/2023] Open
Abstract
Bottom-up grown nanomaterials play an integral role in the development of quantum technologies but are often challenging to characterise on large scales. Here, we harness selective area growth of semiconductor nanowires to demonstrate large-scale integrated circuits and characterisation of large numbers of quantum devices. The circuit consisted of 512 quantum devices embedded within multiplexer/demultiplexer pairs, incorporating thousands of interconnected selective area growth nanowires operating under deep cryogenic conditions. Multiplexers enable a range of new strategies in quantum device research and scaling by increasing the device count while limiting the number of connections between room-temperature control electronics and the cryogenic samples. As an example of this potential we perform a statistical characterization of large arrays of identical quantum dots thus establishing the feasibility of applying cross-bar gating strategies for efficient scaling of future selective area growth quantum circuits. More broadly, the ability to systematically characterise large numbers of devices provides new levels of statistical certainty to materials/device development.
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Affiliation(s)
- Dāgs Olšteins
- Center For Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100, Copenhagen, Denmark
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800, Kongens Lyngby, Denmark
| | - Gunjan Nagda
- Center For Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100, Copenhagen, Denmark
| | - Damon J Carrad
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800, Kongens Lyngby, Denmark
| | - Daria V Beznasyuk
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800, Kongens Lyngby, Denmark
| | - Christian E N Petersen
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800, Kongens Lyngby, Denmark
| | - Sara Martí-Sánchez
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, Catalonia, Spain
| | - Jordi Arbiol
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, Catalonia, Spain
- ICREA, Passeig de Lluís Companys 23, 08010, Barcelona, Catalonia, Spain
| | - Thomas S Jespersen
- Center For Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100, Copenhagen, Denmark.
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800, Kongens Lyngby, Denmark.
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Wang N, Wong WW, Yuan X, Li L, Jagadish C, Tan HH. Understanding Shape Evolution and Phase Transition in InP Nanostructures Grown by Selective Area Epitaxy. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2100263. [PMID: 33856732 DOI: 10.1002/smll.202100263] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2021] [Revised: 03/08/2021] [Indexed: 06/12/2023]
Abstract
There is a strong demand for III-V nanostructures of different geometries and in the form of interconnected networks for quantum science applications. This can be achieved by selective area epitaxy (SAE) but the understanding of crystal growth in these complicated geometries is still insufficient to engineer the desired shape. Here, the shape evolution and crystal structure of InP nanostructures grown by SAE on InP substrates of different orientations are investigated and a unified understanding to explain these observations is established. A strong correlation between growth direction and crystal phase is revealed. Wurtzite (WZ) and zinc-blende (ZB) phases form along <111>A and <111>B directions, respectively, while crystal phase remains the same along other low-index directions. The polarity induced crystal structure difference is explained by thermodynamic difference between the WZ and ZB phase nuclei on different planes. Growth from the openings is essentially determined by pattern confinement and minimization of the total surface energy, regardless of substrate orientations. A novel type-II WZ/ZB nanomembrane homojunction array is obtained by tailoring growth directions through alignment of the openings along certain crystallographic orientations. The understanding in this work lays the foundation for the design and fabrication of advanced III-V semiconductor devices based on complex geometrical nanostructures.
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Affiliation(s)
- Naiyin Wang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Wei Wen Wong
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Xiaoming Yuan
- Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, 410083, P. R. China
| | - Li Li
- Australian National Fabrication Facility ACT Node, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical System, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical System, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
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Seidl J, Gluschke JG, Yuan X, Tan HH, Jagadish C, Caroff P, Micolich AP. Postgrowth Shaping and Transport Anisotropy in Two-Dimensional InAs Nanofins. ACS NANO 2021; 15:7226-7236. [PMID: 33825436 DOI: 10.1021/acsnano.1c00483] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We report on the postgrowth shaping of free-standing two-dimensional (2D) InAs nanofins that are grown by selective-area epitaxy and mechanically transferred to a separate substrate for device fabrication. We use a citric acid-based wet etch that enables complex shapes, for example, van der Pauw cloverleaf structures, with patterning resolution down to 150 nm as well as partial thinning of the nanofin to improve local gate response. We exploit the high sensitivity of the cloverleaf structures to transport anisotropy to address the fundamental question of whether there is a measurable transport anisotropy arising from wurtzite/zincblende polytypism in 2D InAs nanostructures. We demonstrate a mobility anisotropy of order 2-4 at room temperature arising from polytypic stacking faults in our nanofins. Our work highlights a key materials consideration for devices featuring self-assembled 2D III-V nanostructures using advanced epitaxy methods.
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Affiliation(s)
- Jakob Seidl
- School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Jan G Gluschke
- School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Xiaoming Yuan
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - H Hoe Tan
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Chennupati Jagadish
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Philippe Caroff
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Adam P Micolich
- School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
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Escobar Steinvall S, Stutz EZ, Paul R, Zamani M, Dzade NY, Piazza V, Friedl M, de Mestral V, Leran JB, Zamani RR, Fontcuberta I Morral A. Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning. NANOSCALE ADVANCES 2021; 3:326-332. [PMID: 36131749 PMCID: PMC9418067 DOI: 10.1039/d0na00841a] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2020] [Accepted: 11/15/2020] [Indexed: 05/28/2023]
Abstract
Large-scale deployment of thin-film photovoltaics will be facilitated through earth-abundant components. Herein, selective area epitaxy and lateral overgrowth epitaxy are explored for the growth of zinc phosphide (Zn3P2), a promising earth-abundant absorber. The ideal growth conditions are elucidated, and the nucleation of single-crystal nanopyramids that subsequently evolve towards coalesced thin-films is demonstrated. The zinc phosphide pyramids exhibit room temperature bandgap luminescence at 1.53 eV, indicating a high-quality material. The electrical properties of zinc phosphide and the junction with the substrate are assessed by conductive atomic force microscopy on n-type, p-type and intrinsic substrates. The measurements are consistent with the p-type characteristic of zinc phosphide. Overall, this constitutes a new, and transferrable, approach for the controlled and tunable growth of high-quality zinc phosphide, a step forward in the quest for earth-abundant photovoltaics.
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Affiliation(s)
- Simon Escobar Steinvall
- Laboratory of Semiconductor Materials, Institute of Materials, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Elias Z Stutz
- Laboratory of Semiconductor Materials, Institute of Materials, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Rajrupa Paul
- Laboratory of Semiconductor Materials, Institute of Materials, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Mahdi Zamani
- Laboratory of Semiconductor Materials, Institute of Materials, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Nelson Y Dzade
- School of Chemistry, Cardiff University Main Building, Park Place CF10 3AT Cardiff UK
| | - Valerio Piazza
- Laboratory of Semiconductor Materials, Institute of Materials, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Martin Friedl
- Laboratory of Semiconductor Materials, Institute of Materials, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Virginie de Mestral
- Laboratory of Semiconductor Materials, Institute of Materials, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Jean-Baptiste Leran
- Laboratory of Semiconductor Materials, Institute of Materials, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Reza R Zamani
- Centre Inderdisciplinaire de Microscopie Électronique, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Anna Fontcuberta I Morral
- Laboratory of Semiconductor Materials, Institute of Materials, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
- Institute of Physics, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
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Viazmitinov DV, Berdnikov Y, Kadkhodazadeh S, Dragunova A, Sibirev N, Kryzhanovskaya N, Radko I, Huck A, Yvind K, Semenova E. Monolithic integration of InP on Si by molten alloy driven selective area epitaxial growth. NANOSCALE 2020; 12:23780-23788. [PMID: 33232429 DOI: 10.1039/d0nr05779g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We report a new approach for monolithic integration of III-V materials into silicon, based on selective area growth and driven by a molten alloy in metal-organic vapor epitaxy. Our method includes elements of both selective area and droplet-mediated growths and combines the advantages of the two techniques. Using this approach, we obtain organized arrays of high crystalline quality InP insertions into (100) oriented Si substrates. Our detailed structural, morphological and optical studies reveal the conditions leading to defect formation. These conditions are then eliminated to optimize the process for obtaining dislocation-free InP nanostructures grown directly on Si and buried below the top surface. The PL signal from these structures exhibits a narrow peak at the InP bandgap energy. The fundamental aspects of the growth are studied by modeling the InP nucleation process. The model is fitted by our X-ray diffraction measurements and correlates well with the results of our transmission electron microscopy and optical investigations. Our method constitutes a new approach for the monolithic integration of active III-V materials into Si platforms and opens up new opportunities in active Si photonics.
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Yuan X, Wang N, Tian Z, Zhang F, Li L, Lockrey M, He J, Jagadish C, Tan HH. Facet-dependent growth of InAsP quantum wells in InP nanowire and nanomembrane arrays. NANOSCALE HORIZONS 2020; 5:1530-1537. [PMID: 32955074 DOI: 10.1039/d0nh00410c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Selective area epitaxy is a powerful growth technique that has been used to produce III-V semiconductor nanowire and nanomembrane arrays for photonic and electronic applications. The incorporation of a heterostructure such as quantum wells (QWs) brings new functionality and further broadens their applications. Using InP nanowires and nanomembranes as templates, we investigate the growth of InAsP QWs on these pure wurtzite nanostructures. InAsP QWs grow both axially and laterally on the nanowires and nanomembranes, forming a zinc blende phase axially and wurtzite phase on the sidewalls. On the non-polar {11[combining macron]00} sidewalls, the radial QW selectively grows on one sidewall which is located at the semi-polar 〈112[combining macron]〉 A side of the axial QW, causing the shape evolution of the nanowires from hexagonal to triangular cross section. For nanomembranes with {11[combining macron]00} sidewalls, the radial QW grows asymmetrically on the {11[combining macron]00} facet, destroying their symmetry. In comparison, nanomembranes with {112[combining macron]0} sidewalls are shown to be an ideal template for the growth of InAsP QWs, thanks to the uniform QW formation. These QWs emit strongly in the near IR region at room temperature and their emission can be tuned by changing their thickness or composition. These findings enrich our understanding of the QW growth, which provides new insights for heterostructure design in other III-V nanostructures.
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Affiliation(s)
- Xiaoming Yuan
- Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China.
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Dahiya AS, Shakthivel D, Kumaresan Y, Zumeit A, Christou A, Dahiya R. High-performance printed electronics based on inorganic semiconducting nano to chip scale structures. NANO CONVERGENCE 2020; 7:33. [PMID: 33034776 PMCID: PMC7547062 DOI: 10.1186/s40580-020-00243-6] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/13/2020] [Accepted: 09/15/2020] [Indexed: 05/05/2023]
Abstract
The Printed Electronics (PE) is expected to revolutionise the way electronics will be manufactured in the future. Building on the achievements of the traditional printing industry, and the recent advances in flexible electronics and digital technologies, PE may even substitute the conventional silicon-based electronics if the performance of printed devices and circuits can be at par with silicon-based devices. In this regard, the inorganic semiconducting materials-based approaches have opened new avenues as printed nano (e.g. nanowires (NWs), nanoribbons (NRs) etc.), micro (e.g. microwires (MWs)) and chip (e.g. ultra-thin chips (UTCs)) scale structures from these materials have been shown to have performances at par with silicon-based electronics. This paper reviews the developments related to inorganic semiconducting materials based high-performance large area PE, particularly using the two routes i.e. Contact Printing (CP) and Transfer Printing (TP). The detailed survey of these technologies for large area PE onto various unconventional substrates (e.g. plastic, paper etc.) is presented along with some examples of electronic devices and circuit developed with printed NWs, NRs and UTCs. Finally, we discuss the opportunities offered by PE, and the technical challenges and viable solutions for the integration of inorganic functional materials into large areas, 3D layouts for high throughput, and industrial-scale manufacturing using printing technologies.
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Affiliation(s)
- Abhishek Singh Dahiya
- Bendable Electronics and Sensing Technologies (BEST) Group, University of Glasgow, Glasgow, G12 8QQ, UK
| | - Dhayalan Shakthivel
- Bendable Electronics and Sensing Technologies (BEST) Group, University of Glasgow, Glasgow, G12 8QQ, UK
| | - Yogeenth Kumaresan
- Bendable Electronics and Sensing Technologies (BEST) Group, University of Glasgow, Glasgow, G12 8QQ, UK
| | - Ayoub Zumeit
- Bendable Electronics and Sensing Technologies (BEST) Group, University of Glasgow, Glasgow, G12 8QQ, UK
| | - Adamos Christou
- Bendable Electronics and Sensing Technologies (BEST) Group, University of Glasgow, Glasgow, G12 8QQ, UK
| | - Ravinder Dahiya
- Bendable Electronics and Sensing Technologies (BEST) Group, University of Glasgow, Glasgow, G12 8QQ, UK.
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Abstract
We demonstrate the feasibility of growing GaAs nanomembranes on a plastically-relaxed Ge layer deposited on Si (111) by exploiting selective area epitaxy in MBE. Our results are compared to the case of the GaAs homoepitaxy to highlight the criticalities arising by switching to heteroepitaxy. We found that the nanomembranes evolution strongly depends on the chosen growth parameters as well as mask pattern. The selectivity of III-V material with respect to the SiO2 mask can be obtained when the lifetime of Ga adatoms on SiO2 is reduced, so that the diffusion length of adsorbed Ga is high enough to drive the Ga adatoms towards the etched slits. The best condition for a heteroepitaxial selective area epitaxy is obtained using a growth rate equal to 0.3 ML/s of GaAs, with a As BEP pressure of about 2.5 × 10−6 torr and a temperature of 600 °C.
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