Chip for dielectrophoretic microbial capture, separation and detection I: theoretical basis of electrode design

We model the dielectrophoretic response ofE. colibacterial cells and red blood cells, upon exposure to an electric field. We model the separation, capture, and release mechanisms under flow conditions in a microfluidic channel and show under which conditions efficient separation of different cell types occurs. The modelling work is aimed to guide the separation electrode architecture and design for experimental validation of the model. The dielectrophoretic force is affected both by the geometry of the electrodes (the gradient of the electric field), the Re{CM(ω)} factor, and the permittivity of the medium ϵ_m. Our modelling makes testable predictions and shows that designing the electrode structure to ensure structure periodicity with spacing between consecutive traps smaller than the length of the depletion zone ensures efficient capture and separation. Such electrode system has higher capture and separation efficiency than systems with the established circular electrode architecture. The simulated, modelled microfluidic design allows for the separated bacteria, concentrated by dedicated dielectrophoretic regions, to be subsequently detected using label-free functionalized nanowire sensors. The experimental validation of the modelling work presented here and the validation of the theoretical design constraints of the chip electrode architecture is presented in the companion paper in the same issue (Weber MUet al2022 Chip for dielectrophoretic Microbial Capture, Separation and Detection II: Experimental Study).

Bulk AlInAs on InP(111) as a novel material system for pure single photon emission

In this letter, we report on quantum light emission from bulk AlInAs grown on InP(111) substrates. We observe indium rich clusters in the bulk Al_0.48In_0.52As (AlInAs), resulting in quantum dot-like energetic traps for charge carriers, which are confirmed via cross-sectional scanning tunnelling microscopy (XSTM) measurements and 6-band k·p simulations. We observe quantum dot (QD)-like emission signals, which appear as sharp lines in our photoluminescence spectra at near infrared wavelengths around 860 nm, and with linewidths as narrow as 50 μeV. We demonstrate the capability of this new material system to act as an emitter of pure single photons as we extract g⁽²⁾-values as low as gcw(2)(0)=0.05-0.05+0.17 for continuous wave (cw) excitation and gpulsed,  corr.(2)=0.24±0.02 for pulsed excitation.

Tuning quantum dot luminescence below the bulk band gap using tensile strain

Self-assembled quantum dots (SAQDs) grown under biaxial tension could enable novel devices by taking advantage of the strong band gap reduction induced by tensile strain. Tensile SAQDs with low optical transition energies could find application in the technologically important area of mid-infrared optoelectronics. In the case of Ge, biaxial tension can even cause a highly desirable crossover from an indirect- to a direct-gap band structure. However, the inability to grow tensile SAQDs without dislocations has impeded progress in these directions. In this article, we demonstrate a method to grow dislocation-free, tensile SAQDs by employing the unique strain relief mechanisms of (110)-oriented surfaces. As a model system, we show that tensile GaAs SAQDs form spontaneously, controllably, and without dislocations on InAlAs(110) surfaces. The tensile strain reduces the band gap in GaAs SAQDs by ~40%, leading to robust type-I quantum confinement and photoluminescence at energies lower than that of bulk GaAs. This method can be extended to other zinc blende and diamond cubic materials to form novel optoelectronic devices based on tensile SAQDs.