Micro-fabricated components for cold atom sensors

Laser cooled atoms have proven transformative for precision metrology, playing a pivotal role in state-of-the-art clocks and interferometers and having the potential to provide a step-change in our modern technological capabilities. To successfully explore their full potential, laser cooling platforms must be translated from the laboratory environment and into portable, compact quantum sensors for deployment in practical applications. This transition requires the amalgamation of a wide range of components and expertise if an unambiguously chip-scale cold atom sensor is to be realized. We present recent developments in cold-atom sensor miniaturization, focusing on key components that enable laser cooling on the chip-scale. The design, fabrication, and impact of the components on sensor scalability and performance will be discussed with an outlook to the next generation of chip-scale cold atom devices.

A 19 day earth tide measurement with a MEMS gravimeter

The measurement of tiny variations in local gravity enables the observation of subterranean features. Gravimeters have historically been extremely expensive instruments, but usable gravity measurements have recently been conducted using MEMS (microelectromechanical systems) sensors. Such sensors are cheap to produce, since they rely on the same fabrication techniques used to produce mobile phone accelerometers. A significant challenge in the development of MEMS gravimeters is maintaining stability over long time periods, which is essential for long term monitoring applications. A standard way to demonstrate gravimeter stability and sensitivity is to measure the periodic elastic distortion of the Earth due to tidal forces-the Earth tides. Here, a 19 day measurement of the Earth tides, with a correlation coefficient to the theoretical signal of 0.975, has been presented. This result demonstrates that this MEMS gravimeter is capable of conducting long-term time-lapse gravimetry, a functionality essential for applications such as volcanology.

Ge-on-Si single-photon avalanche diode detectors for short-wave infrared wavelengths

Germanium-on-silicon (Ge-on-Si) based single-photon avalanche diodes (SPADs) have recently emerged as a promising detector candidate for ultra-sensitive and picosecond resolution timing measurement of short-wave infrared (SWIR) photons. Many applications benefit from operating in the SWIR spectral range, such as long distance light detection and ranging, however, there are few single-photon detectors exhibiting the high-performance levels obtained by all-silicon SPADs commonly used for single-photon detection at wavelengths <1 µm. This paper first details the advantages of operating at SWIR wavelengths, the current technologies, and associated issues, and describes the potential of Ge-on-Si SPADs as a single-photon detector technology for this wavelength region. The working principles, fabrication and characterisation processes of such devices are subsequently detailed. We review the research in these single-photon detectors and detail the state-of-the-art performance. Finally, the challenges and future opportunities offered by Ge-on-Si SPAD detectors are discussed.

High sensitivity Ge-on-Si single-photon avalanche diode detectors

The performance of planar geometry Ge-on-Si single-photon avalanche diode detectors of 26µm diameter is presented. Record low dark count rates are observed, remaining less than 100 K counts per second at 6.6% excess bias and 125 K. Single-photon detection efficiencies are found to be up to 29.4%, and are shown to be temperature insensitive. These performance characteristics lead to a significantly reduced noise equivalent power (NEP) of 7.7×10^-17WHz^-12 compared to prior planar devices, and represent a two orders of magnitude reduction in NEP compared to previous Ge-on-Si mesa devices of a comparable diameter. Low jitter values of 134±10ps are demonstrated.

Characterization of integrated waveguides by atomic-force-microscopy-assisted mid-infrared imaging and spectroscopy

A novel spectroscopy technique to enable the rapid characterization of discrete mid-infrared integrated photonic waveguides is demonstrated. The technique utilizes lithography patterned polymer blocks that absorb light strongly within the molecular fingerprint region. These act as integrated waveguide detectors when combined with an atomic force microscope that measures the photothermal expansion when infrared light is guided to the block. As a proof of concept, the technique is used to experimentally characterize propagation loss and grating coupler response of Ge-on-Si waveguides at wavelengths from 6 to 10 µm. In addition, when the microscope is operated in scanning mode at fixed wavelength, the guided mode exiting the output facet is imaged with a lateral resolution better than 500 nm i.e. below the diffraction limit. The characterization technique can be applied to any mid-infrared waveguide platform and can provide non-destructive in-situ testing of discrete waveguide components.

Sub-megahertz linewidth 780.24 nm distributed feedback laser for 87Rb applications

A distributed feedback GaAs-based semiconductor laser with a laterally coupled grating is demonstrated at a wavelength of 780.24 nm with up to 60 mW power. A mode expander and aluminum-free active layers have been used to reduce the linewidth to 612 kHz while maintaining high output power. The laser demonstrates over 40 dB side-mode suppression ratio with >0.3nm of tuning suitable for atom cooling experiments with the D2 ⁸⁷Rb atomic transition. This laser has substantial potential to be integrated into miniaturized cold atom systems.

Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates

We present an experimental and theoretical analysis of the formation of nanovoids within Si microcrystals epitaxially grown on Si patterned substrates. The growth conditions leading to the nucleation of nanovoids have been highlighted, and the roles played by the deposition rate, substrate temperature, and substrate pattern geometry are identified. By combining various scanning and transmission electron microscopy techniques, it has been possible to link the appearance pits of a few hundred nanometer width at the microcrystal surface with the formation of nanovoids within the crystal volume. A phase-field model, including surface diffusion and the flux of incoming material with shadowing effects, reproduces the qualitative features of the nanovoid formation thereby opening new perspectives for the bottom-up fabrication of 3D semiconductors microstructures.

Terahertz absorption-saturation and emission from electron-doped germanium quantum wells

We study radiative relaxation at terahertz frequencies in n-type Ge/SiGe quantum wells, optically pumped with a terahertz free electron laser. Two wells coupled through a tunneling barrier are designed to operate as a three-level laser system with non-equilibrium population generated by optical pumping around the 1→3 intersubband transition at 10 THz. The non-equilibrium subband population dynamics are studied by absorption-saturation measurements and compared to a numerical model. In the emission spectroscopy experiment, we observed a photoluminescence peak at 4 THz, which can be attributed to the 3→2 intersubband transition with possible contribution from the 2→1 intersubband transition. These results represent a step towards silicon-based integrated terahertz emitters.

Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides

The waveguide losses from a range of surface plasmon and double metal waveguides for Ge/Si_1-xGe_x THz quantum cascade laser gain media are investigated at 4.79 THz (62.6 μm wavelength). Double metal waveguides demonstrate lower losses than surface plasmonic guiding with minimum losses for a 10 μm thick active gain region with silver metal of 21 cm^-1 at 300 K reducing to 14.5 cm^-1 at 10 K. Losses for silicon foundry compatible metals including Al and Cu are also provided for comparison and to provide a guide for gain requirements to enable lasers to be fabricated in commercial silicon foundries. To allow these losses to be calculated for a range of designs, the complex refractive index of a range of nominally undoped Si_1-xGe_x with x = 0.7, 0.8 and 0.9 and doped Ge heterolayers were extracted from Fourier transform infrared spectroscopy measurements between 0.1 and 10 THz and from 300 K down to 10 K. The results demonstrate losses comparable to similar designs of GaAs/AlGaAs quantum cascade laser plasmon waveguides indicating that a gain threshold of 15.1 cm^-1 and 23.8 cm^-1 are required to produce a 4.79 THz Ge/SiGe THz laser at 10 K and 300 K, respectively, for 2 mm long double metal waveguide quantum cascade lasers with facet coatings.

Ge-on-Si waveguides for sensing in the molecular fingerprint regime

Low loss, single mode, Ge-on-Si rib waveguides are used to demonstrated optical sensing in the molecular fingerprint region of the mid-infrared spectrum. Sensing is carried out using two spin-coated films, with strong absorption in the mid-infrared. These films are used to calibrate the modal overlap with an analyte, and therefore experimentally demonstrate the potential for Ge-on-Si waveguides for mid-infrared sensing applications. The results are compared to Fourier transform infrared spectroscopy measurements. The advantage of waveguide spectroscopy is demonstrated in terms of the increased optical interaction, and a new multi-path length approach is demonstrated to improve the dynamic range, which is not possible with conventional FTIR or attenuated total reflection (ATR) measurements. These results highlight the potential for Ge-on-Si as an integrated sensing platform for healthcare, pollution monitoring and defence applications.

1.4 million Q factor Si3N4 micro-ring resonator at 780 nm wavelength for chip-scale atomic systems

A silicon nitride micro-ring resonator with a loaded Q factor of 1.4 × 10⁶ at 780 nm wavelength is demonstrated on silicon substrates. This is due to the low propagation loss waveguides achieved by optimization of waveguide sidewall interactions and top cladding refractive index. Potential applications include laser frequency stabilization allowing for chip-scale atomic systems targeting the ⁸⁷Rb atomic transition at 780.24 nm. The temperature dependent wavelength shift of the micro-ring was determined to be 13.1 pm/K indicating that a minimum temperature stability of less than ±15 mK is required for such devices for wavelength locking applications. If a polyurethane acrylate top cladding of an optimized thickness is used then the micro-ring could effectively be athermal, resulting in reduced footprint, power consumption, and cost of potential devices.

3D LIDAR imaging using Ge-on-Si single-photon avalanche diode detectors

We present a scanning light detection and ranging (LIDAR) system incorporating an individual Ge-on-Si single-photon avalanche diode (SPAD) detector for depth and intensity imaging in the short-wavelength infrared region. The time-correlated single-photon counting technique was used to determine the return photon time-of-flight for target depth information. In laboratory demonstrations, depth and intensity reconstructions were made of targets at short range, using advanced image processing algorithms tailored for the analysis of single-photon time-of-flight data. These laboratory measurements were used to predict the performance of the single-photon LIDAR system at longer ranges, providing estimations that sub-milliwatt average power levels would be required for kilometer range depth measurements.

High performance planar germanium-on-silicon single-photon avalanche diode detectors

Single-photon detection has emerged as a method of choice for ultra-sensitive measurements of picosecond optical transients. In the short-wave infrared, semiconductor-based single-photon detectors typically exhibit relatively poor performance compared with all-silicon devices operating at shorter wavelengths. Here we show a new generation of planar germanium-on-silicon (Ge-on-Si) single-photon avalanche diode (SPAD) detectors for short-wave infrared operation. This planar geometry has enabled a significant step-change in performance, demonstrating single-photon detection efficiency of 38% at 125 K at a wavelength of 1310 nm, and a fifty-fold improvement in noise equivalent power compared with optimised mesa geometry SPADs. In comparison with InGaAs/InP devices, Ge-on-Si SPADs exhibit considerably reduced afterpulsing effects. These results, utilising the inexpensive Ge-on-Si platform, provide a route towards large arrays of efficient, high data rate Ge-on-Si SPADs for use in eye-safe automotive LIDAR and future quantum technology applications.

By incorporating germanium, single-photon avalanche diode detectors using silicon-based platforms are applied to infrared light detection. Here, a cost-effective planar detector geometry is presented yielding high detection efficiency suitable for applications such as sparse photon imaging or LIDAR.

Plasmonic mid-infrared third harmonic generation in germanium nanoantennas

We demonstrate third harmonic generation in plasmonic antennas consisting of highly doped germanium grown on silicon substrates and designed to be resonant in the mid-infrared frequency range that is inaccessible with conventional nonlinear plasmonic materials. Owing to the near-field enhancement, the result is an ultrafast, subdiffraction, coherent light source with a wavelength tunable between 3 and 5 µm, and ideally overlapping with the fingerprint region of molecular vibrations. To observe the nonlinearity in this challenging spectral window, a high-power femtosecond laser system equipped with parametric frequency conversion in combination with an all-reflective confocal microscope setup is employed. We demonstrate spatially resolved maps of the linear scattering cross section and the nonlinear emission of single isolated antenna structures. A clear third-order power dependence as well as mid-infrared emission spectra prove the nonlinear nature of the light emission. Simulations support the observed resonance length of the double-rod antenna and demonstrate that the field enhancement inside the antenna material is responsible for the nonlinear frequency mixing.

Low loss Ge-on-Si waveguides operating in the 8-14 µm atmospheric transmission window

Germanium-on-silicon waveguides were modeled, fabricated and characterized at wavelengths ranging from 7.5 to 11 µm. Measured waveguide losses are below 5 dB/cm for both TE and TM polarization and reach values of ∼ 1 dB/cm for ≥ 10 µm wavelengths for the TE polarization. This work demonstrates experimentally for the first time that Ge-on-Si is a viable waveguide platform for sensing in the molecular fingerprint spectral region. Detailed modeling and analysis is presented to identify the various loss contributions, showing that with practical techniques losses below 1 dB/cm could be achieved across the full measurement range.

Microelectromechanical system gravimeters as a new tool for gravity imaging

A microelectromechanical system (MEMS) gravimeter has been manufactured with a sensitivity of 40 ppb in an integration time of 1 s. This sensor has been used to measure the Earth tides: the elastic deformation of the globe due to tidal forces. No such measurement has been demonstrated before now with a MEMS gravimeter. Since this measurement, the gravimeter has been miniaturized and tested in the field. Measurements of the free-air and Bouguer effects have been demonstrated by monitoring the change in gravitational acceleration measured while going up and down a lift shaft of 20.7 m, and up and down a local hill of 275 m. These tests demonstrate that the device has the potential to be a useful field-portable instrument. The development of an even smaller device is underway, with a total package size similar to that of a smartphone.This article is part of a discussion meeting issue 'The promises of gravitational-wave astronomy'.

Topotactic anion-exchange in thermoelectric nanostructured layered tin chalcogenides with reduced selenium content

Topotactic solution synthesis yields nanostructured tin chalcogenides, SnS_1–xSe_x with controllable composition; spark plasma sintered SnS_0.1Se_0.9 achieves ZT ≈ 1.16 at 923 K via microstructural texture tuning.

Anion exchange has been performed with nanoplates of tin sulfide (SnS) via “soft chemical” organic-free solution syntheses to yield layered pseudo-ternary tin chalcogenides on a 10 g-scale. SnS undergoes a topotactic transformation to form a series of S-substituted tin selenide (SnSe) nano/micro-plates with tuneable chalcogenide composition. SnS_0.1Se_0.9 nanoplates were spark plasma sintered into phase-pure, textured, dense pellets, the ZT of which has been significantly enhanced to ≈1.16 from ≈0.74 at 923 K via microstructure texturing control. These approaches provide versatile, scalable and low-cost routes to p-type layered tin chalcogenides with controllable composition and competitive thermoelectric performance.

Field Tests of a Portable MEMS Gravimeter

Gravimeters are used to measure density anomalies under the ground. They are applied in many different fields from volcanology to oil and gas exploration, but present commercial systems are costly and massive. A new type of gravity sensor has been developed that utilises the same fabrication methods as those used to make mobile phone accelerometers. In this study, we describe the first results of a field-portable microelectromechanical system (MEMS) gravimeter. The stability of the gravimeter is demonstrated through undertaking a multi-day measurement with a standard deviation of 5.58×10−6 ms−2. It is then demonstrated that a change in gravitational acceleration of 4.5×10−5 ms−2 can be measured as the device is moved between the top and the bottom of a 20.7 m lift shaft with a signal-to-noise ratio (SNR) of 14.25. Finally, the device is demonstrated to be stable in a more harsh environment: a 4.5×10−4 ms−2 gravity variation is measured between the top and bottom of a 275-m hill with an SNR of 15.88. These initial field-tests are an important step towards a chip-sized gravity sensor.

Mid-infrared light emission > 3 µm wavelength from tensile strained GeSn microdisks

GeSn alloys with Sn contents of 8.4 % and 10.7 % are grown pseudomorphically on Ge buffers on Si (001) substrates. The alloys as-grown are compressively strained, and therefore indirect bandgap. Undercut GeSn on Ge microdisk structures are fabricated and strained by silicon nitride stressor layers, which leads to tensile strain in the alloys, and direct bandgap photoluminescence in the 3-5 µm gas sensing window of the electromagnetic spectrum. The use of pseudomorphic layers and external stress mitigates the need for plastic deformation to obtain direct bandgap alloys. It is demonstrated, that the optically pumped light emission overlaps with the methane absorption lines, suggesting that GeSn alloys are well suited for mid-infrared integrated gas sensors on Si chips.

One dimensional transport in silicon nanowire junction-less field effect transistors

Junction-less nanowire transistors are being investigated to solve short channel effects in future CMOS technology. Here we demonstrate 8 nm diameter silicon nanowire junction-less transistors with metallic doping densities which demonstrate clear 1D electronic transport characteristics. The 1D regime allows excellent gate modulation with near ideal subthreshold slopes, on- to off-current ratios above 10⁸ and high on-currents at room temperature. Universal conductance scaling as a function of voltage and temperature similar to previous reports of Luttinger liquids and Coulomb gap behaviour at low temperatures suggests that many body effects including electron-electron interactions are important in describing the electronic transport. This suggests that modelling of such nanowire devices will require 1D models which include many body interactions to accurately simulate the electronic transport to optimise the technology but also suggest that 1D effects could be used to enhance future transistor performance.

Optical Activation of Germanium Plasmonic Antennas in the Mid-Infrared

Impulsive interband excitation with femtosecond near-infrared pulses establishes a plasma response in intrinsic germanium structures fabricated on a silicon substrate. This direct approach activates the plasmonic resonance of the Ge structures and enables their use as optical antennas up to the mid-infrared spectral range. The optical switching lasts for hundreds of picoseconds until charge recombination redshifts the plasma frequency. The full behavior of the structures is modeled by the electrodynamic response established by an electron-hole plasma in a regular array of antennas.

Measurement of the Earth tides with a MEMS gravimeter

The ability to measure tiny variations in the local gravitational acceleration allows, besides other applications, the detection of hidden hydrocarbon reserves, magma build-up before volcanic eruptions, and subterranean tunnels. Several technologies are available that achieve the sensitivities required for such applications (tens of microgal per hertz(1/2)): free-fall gravimeters, spring-based gravimeters, superconducting gravimeters, and atom interferometers. All of these devices can observe the Earth tides: the elastic deformation of the Earth's crust as a result of tidal forces. This is a universally predictable gravitational signal that requires both high sensitivity and high stability over timescales of several days to measure. All present gravimeters, however, have limitations of high cost (more than 100,000 US dollars) and high mass (more than 8 kilograms). Here we present a microelectromechanical system (MEMS) device with a sensitivity of 40 microgal per hertz(1/2) only a few cubic centimetres in size. We use it to measure the Earth tides, revealing the long-term stability of our instrument compared to any other MEMS device. MEMS accelerometers--found in most smart phones--can be mass-produced remarkably cheaply, but none are stable enough to be called a gravimeter. Our device has thus made the transition from accelerometer to gravimeter. The small size and low cost of this MEMS gravimeter suggests many applications in gravity mapping. For example, it could be mounted on a drone instead of low-flying aircraft for distributed land surveying and exploration, deployed to monitor volcanoes, or built into multi-pixel density-contrast imaging arrays.

Facile Surfactant-Free Synthesis of p-Type SnSe Nanoplates with Exceptional Thermoelectric Power Factors

A surfactant‐free solution methodology, simply using water as a solvent, has been developed for the straightforward synthesis of single‐phase orthorhombic SnSe nanoplates in gram quantities. Individual nanoplates are composed of {100} surfaces with {011} edge facets. Hot‐pressed nanostructured compacts (E_g≈0.85 eV) exhibit excellent electrical conductivity and thermoelectric power factors (S²σ) at 550 K. S²σ values are 8‐fold higher than equivalent materials prepared using citric acid as a structure‐directing agent, and electrical properties are comparable to the best‐performing, extrinsically doped p‐type polycrystalline tin selenides. The method offers an energy‐efficient, rapid route to p‐type SnSe nanostructures.

Analysis of Ge micro-cavities with in-plane tensile strains above 2

Ge on Si micro-disk, ring and racetrack cavities are fabricated and strained using silicon nitride stressor layers. Photoluminescence measurements demonstrate emission at wavelengths ≥ 2.3 μm, and the highest strained samples demonstrate in-plane, tensile strains of > 2 %, as measured by Raman spectroscopy. Strain analysis of the micro-disk structures demonstrate that shear strains are present in circular cavities, which can detrimentally effect the carrier concentration for direct band transitions. The advantages and disadvantages of each type of proposed cavity structure are discussed.

Midinfrared Plasmon-Enhanced Spectroscopy with Germanium Antennas on Silicon Substrates

Midinfrared plasmonic sensing allows the direct targeting of unique vibrational fingerprints of molecules. While gold has been used almost exclusively so far, recent research has focused on semiconductors with the potential to revolutionize plasmonic devices. We fabricate antennas out of heavily doped Ge films epitaxially grown on Si wafers and demonstrate up to 2 orders of magnitude signal enhancement for the molecules located in the antenna hot spots compared to those located on a bare silicon substrate. Our results set a new path toward integration of plasmonic sensors with the ubiquitous CMOS platform.

Extending the emission wavelength of Ge nanopillars to 2.25 μm using silicon nitride stressors

The room temperature photoluminescence from Ge nanopillars has been extended from 1.6 μm to above 2.25 μm wavelength through the application of tensile stress from silicon nitride stressors deposited by inductively-coupled-plasma plasma-enhanced chemical-vapour-deposition. Photoluminescence measurements demonstrate biaxial equivalent tensile strains of up to ∼ 1.35% in square topped nanopillars with side lengths of 200 nm. Biaxial equivalent strains of 0.9% are observed in 300 nm square top pillars, confirmed by confocal Raman spectroscopy. Finite element modelling demonstrates that an all-around stressor layer is preferable to a top only stressor, as it increases the hydrostatic component of the strain, leading to an increased shift in the band-edge and improved uniformity over top-surface only stressors layers.

Design and fabrication of memory devices based on nanoscale polyoxometalate clusters

Flash memory devices--that is, non-volatile computer storage media that can be electrically erased and reprogrammed--are vital for portable electronics, but the scaling down of metal-oxide-semiconductor (MOS) flash memory to sizes of below ten nanometres per data cell presents challenges. Molecules have been proposed to replace MOS flash memory, but they suffer from low electrical conductivity, high resistance, low device yield, and finite thermal stability, limiting their integration into current MOS technologies. Although great advances have been made in the pursuit of molecule-based flash memory, there are a number of significant barriers to the realization of devices using conventional MOS technologies. Here we show that core-shell polyoxometalate (POM) molecules can act as candidate storage nodes for MOS flash memory. Realistic, industry-standard device simulations validate our approach at the nanometre scale, where the device performance is determined mainly by the number of molecules in the storage media and not by their position. To exploit the nature of the core-shell POM clusters, we show, at both the molecular and device level, that embedding [(Se(IV)O3)2](4-) as an oxidizable dopant in the cluster core allows the oxidation of the molecule to a [Se(v)2O6](2-) moiety containing a {Se(V)-Se(V)} bond (where curly brackets indicate a moiety, not a molecule) and reveals a new 5+ oxidation state for selenium. This new oxidation state can be observed at the device level, resulting in a new type of memory, which we call 'write-once-erase'. Taken together, these results show that POMs have the potential to be used as a realistic nanoscale flash memory. Also, the configuration of the doped POM core may lead to new types of electrical behaviour. This work suggests a route to the practical integration of configurable molecules in MOS technologies as the lithographic scales approach the molecular limit.

Determining the electronic performance limitations in top-down-fabricated Si nanowires with mean widths down to 4 nm

Silicon nanowires have been patterned with mean widths down to 4 nm using top-down lithography and dry etching. Performance-limiting scattering processes have been measured directly which provide new insight into the electronic conduction mechanisms within the nanowires. Results demonstrate a transition from 3-dimensional (3D) to 2D and then 1D as the nanowire mean widths are reduced from 12 to 4 nm. The importance of high quality surface passivation is demonstrated by a lack of significant donor deactivation, resulting in neutral impurity scattering ultimately limiting the electronic performance. The results indicate the important parameters requiring optimization when fabricating nanowires with atomic dimensions.

Ge/SiGe quantum confined Stark effect electro-absorption modulation with low voltage swing at λ = 1550 nm

Low-voltage swing (≤1.0 V) high-contrast ratio (6 dB) electro-absorption modulation covering 1460 to 1560 nm wavelength has been demonstrated using Ge/SiGe quantum confined Stark effect (QCSE) diodes grown on a silicon substrate. The heterolayers for the devices were designed using an 8-band k.p Poisson-Schrödinger solver which demonstrated excellent agreement with the experimental results. Modelling and experimental results demonstrate that by changing the quantum well width of the device, low power Ge/SiGe QCSE modulators can be designed to cover the S- and C-telecommunications bands.

Surface morphology of fetal neural transplants into the lateral ventricles after hippocampal lesions

The surface morphology of transplants of rat fetal hippocampal tissue, and of cavities formed by aspiration lesion of the adult rat hippocampus and overlying neocortex into which the transplants were placed, was studied by scanning electron microscopy. The surface of lesion cavities was covered by a scar upon which occasional cellular profiles were found. The surface cells resembled supraependymal macrophages. Lesion cavities with a transplant showed similar scarring although the number of supraependymal structures was increased. Polymorphic cells and numerous fiber processes were observed both on the surface and embedded in the scar. Ependymal structures were seen on the non-damaged ventricular surfaces adjacent to the lesion site. These regions, however, also displayed increases in the number and types of supraependymal structures. Scanning electron microscopy demonstrated considerable variability in surface morphology of different transplants and over the surface of individual transplants. A transplant could show regions of scarring, areas covered by cells resembling ependymal cells, and regions covered by a dense matrix of fibers. In many regions the fibers coalesced to form a branching, web-like network over the transplant surface. Transmission electron microscopy indicated that the surface could be covered by ependymal cells or by the scar seen in scanning specimens. Some surface fibers were identified as axons. Cells on the surface of the transplants could be identified as neuronal, glial-like, and phagocytic. The cells and the possible effects of surface morphology on transplant function is discussed.

Effects of carotid artery occlusion on the pressor response induced by sustained isometric contraction in the cat

The effects of clonidine, a central alpha 2 agonist, on changes in blood pressure caused by muscle afferent nerve (ergoreceptor) activation and baroreceptor manipulation were studied in cats. Prolonged isometric contractions (ergoreceptor activation) of the gastrocnemius and plantaris muscles increased mean arterial pressure by 53 mmHg. This pressor response was not altered by naloxone (0.5 mumol.litre-1) but was eliminated by clonidine (0.5-2.0 micrograms) when injected into the cerebral aqueduct. Brief occlusion of the carotid artery (15-30 s) caused mean arterial pressure to increase by 32-42 mmHg at rest. Neither naloxone nor clonidine altered the magnitude of the reflex pressor response to carotid occlusion. Similar increases in pressure were measured when occlusion was applied during fatiguing isometric contractions; thus baroreceptor induced increases in pressure were superimposed on the ergoreceptor induced blood pressure changes. Naloxone did not affect the changes in pressure caused by either reflex response. Clonidine continued to eliminate the pressor response to muscular contraction but did not affect the pressure increase when the carotid occlusion was applied during contractions. Electrical stimulation of the carotid sinus nerve caused blood pressure to decrease by 36 mmHg during rest and by 41 mmHg during fatiguing isometric contractions. Clonidine did not alter the depressor response to carotid sinus nerve stimulation. These data may indicate that separate pathways centrally mediate the changes in blood pressure caused by ergoreceptor and baroreceptor afferent activation. The integration of the ergoreceptor pathway may involve a catecholaminergic-opioidergic system but the present results do not suggest a similar interaction for the baroreceptor integration.

Possible catecholaminergic-opioidergic control of blood pressure during muscular contraction

The effects of an alpha 2 adrenoceptor blocker, yohimbine, and an alpha 1 adrenoceptor blocker, phenoxybenzamine, and the central alpha 2 adrenoceptor agonist, clonidine, on changes in arterial blood pressure and heart rate were studied during fatiguing muscular contractions to determine whether an adrenergic-opioidergic system might be involved in the mediation of cardiovascular function. Fatiguing contractions of the gastrocnemius and plantaris muscles of cats caused an increase in mean arterial blood pressure to 150-170 mmHg from resting values of 110-120 mmHg. Injection of clonidine into the cerebral aqueduct eliminated the increase in blood pressure; this effect was dose dependent. Naloxone antagonised the effects of the highest dose of clonidine (5 micrograms). Injections of yohimbine (1 microgram) into the cerebral aqueduct had no significant effect on this pressor response. Yohimbine (1 microgram) effectively counteracted the antipressor effects of clonidine when the two drugs were injected together until higher doses of clonidine (2-5 micrograms) were used. Phenoxybenzamine had no effect on the pressor response itself but unlike yohimbine was able to attenuate the effects of clonidine only when injected together. These data suggest that activation of muscle ergoreceptor afferent nerve fibres (group III and IV fibres) during muscular contractions may cause an increase in arterial blood pressure by interfering with an inhibitory adrenergic-endorphinergic pathway in the medullary region of the brainstem.

Venous contrast extravasation during digital subtraction angiography

Six episodes of contrast extravasation occurred in 5 patients during intravenous digital subtraction angiography in a period of 9 months. The extravasations were into the mediastinum (3), pericardium (1), and right atrial wall (2). These occurred using a variety of catheters, all the same size (5.0 F--1.67 mm). Three were Katzen catheters, one had a pigtail configuration, and two were straight catheters. We believe that the extravasations are due to three main factors. The first is catheter-related, owing to the small size (5.0 F) creating recoil and marked jet stream effect due to the large volume and pressure that must be delivered through the side holes. The second factor is related to positioning of the catheter in the superior vena cava. Finally, the respiratory phase at the time of injection becomes crucial. Understanding of these factors may help to decrease this potentially serious complication.

Lymphocele: an unusual mass in the right upper quadrant

A patient with a palpable right upper abdominal mass eight years after cholecystectomy was found to have a subhepatic lymphocele. Although this is an uncommon location, the presence of a sonolucent mass in an area of previous surgery suggests lymphocele.

Erosion of the scapula by a benign lipoma: computed tomography diagnosis

A lipoma eroding the scapula is diagnosed by computed tomography.

Hindgut duplication with rectovaginal fistula

Complete colon duplication is an extremely rare congenital anomaly that occasionally presents diagnostic problems. This report presents a 23-year-old black woman with complete duplication of the colon and distal ileum, with termination of 1 colon into the vagina.

Polyphosphate bone scanning of non-malignant bone disease in children

The advent of 99mTechnetium phosphate bone scanning radiopharmaceuticals has opened new methods of investigation of pediatric bone diseases. In axial skeleton pain, suspected osteomyelitis, evaluation of vascular integrity and suspected but undetected fractures, the bone scan has proved to be a highly complementary study to the radiologic examination.

Diagnosis of osteomyelitis in children by combined blood pool and bone imaging

Differentiation of osteomyelitis from cellulitis or septic arthritis can be difficult. The radiological examination often does not have the characteristic features. Seventy of 71 children with osteomyelitis had focal areas of increased radioactivity at the site of the infection. The addition of "blood pool" images aids in the interpretation of the study as they permit evaluation of the effect of hyperemia. The 13 childrenwith cellulitis had diffuse increase in radioactivity involving both the bones and soft tissues. Bone imaging as the initial screening procedure for osteomyelitis is recommended.