Enhanced LWIR response of InP/InAsP quantum discs-in-nanowire array photodetectors by photogating and ultra-thin ITO contacts

Here we report on an experimental and theoretical investigation of the long-wavelength infrared (LWIR) photoresponse of photodetectors based on arrays of three million InP nanowires with axially embedded InAsP quantum discs. An ultra-thin top indium tin oxide contact combined with a novel photogating mechanism facilitates an improved LWIR normal incidence sensitivity in contrast to traditional planar quantum well photodetectors. The electronic structure of the quantum discs, including strain and defect-induced photogating effects, and optical transition matrix elements were calculated by an 8-bandk·psimulation along with solving drift-diffusion equations to unravel the physics behind the generation of narrow linewidth intersubband signals observed from the quantum discs.

Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes

In the past years, light-emitting diodes (LED) made of GaN and its related ternary compounds with indium and aluminium have become an enabling technology in all areas of lighting. Visible LEDs have yet matured, but research on deep ultraviolet (UV) LEDs is still in progress. The polarisation in the anisotropic wurtzite lattice and the low free hole density in p-doped III-nitride compounds with high aluminium content make the design for high efficiency a critical step. The growth kinetics of the rather thin active quantum wells in III-nitride LEDs makes them prone to inhomogeneous broadening (IHB). Physical modelling of the active region of III-nitride LEDs supports the optimisation by revealing the opaque active region physics. In this work, we analyse the impact of the IHB on the luminescence and carrier transport III-nitride LEDs with multi-quantum well (MQW) active regions by numerical simulations comparing them to experimental results. The IHB is modelled with a statistical model that enables efficient and deterministic simulations. We analyse how the lumped electronic characteristics including the quantum efficiency and the diode ideality factor are related to the IHB and discuss how they can be used in the optimisation process.

Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas

We report on photodetection in deep subwavelength Ge(Sn) nano-islands on Si nano-pillar substrates, in which self-aligned nano-antennas in the Al contact metal are used to enhance light absorption by means of local surface plasmon resonances. The impact of parameters such as substrate doping and device geometry on the measured responsivities are investigated and our experimental results are supported by simulations of the three-dimensional distribution of the electromagnetic fields. Comparatively high optical responsivities of about 0.1 A W^-1 are observed as a consequence of the excitation of localized surface plasmons, making our nano-island photodetectors interesting for applications in which size reduction is essential.

Numerical analysis of subwavelength field effects in photonic crystal slab cavities

Surface coupling of single quantum emitters to optical cavities consisting of a photonic crystal slab is a delicate yet crucial task for photonic quantum applications. By coupling through the evanescent surface field only small Purcell factors can be achieved. Here, we propose to introduce a pit in the slab to position the emitter closer to the mode field maximum. Photonic crystal slab L3 cavities are investigated with respect to quality factor and Purcell effect, using finite element calculations in the frequency domain. That way the spatial distribution of the Purcell factor can be calculated. Introducing a small sized pit to the surface of the photonic crystal cavity can evoke subwavelength field effects, confining the field maximum inside the pit. By engineering a pit in the center of the cavity the Purcell factor can be increased from 176 to 1331, albeit reducing the Q factor from 20769 to 16696.

Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics

This paper reports on the direct qualitative and quantitative performance comparisons of the field-effect transistors (FETs) based on vertical gallium nitride nanowires (GaN NWs) with different NW numbers (i.e., 1–100) and diameters (i.e., 220–640 nm) fabricated on the same wafer substrate to prove the feasibility of employing the vertical 3D architecture concept towards massively parallel electronic integration, particularly for logic circuitry and metrological applications. A top-down approach combining both inductively coupled plasma dry reactive ion etching (ICP-DRIE) and wet chemical etching is applied in the realization of vertically aligned GaN NWs on metalorganic vapor-phase epitaxy (MOVPE)-based GaN thin films with specific doping profiles. The FETs are fabricated involving a stack of n-p-n GaN layers with embedded inverted p-channel, top drain bridging contact, and wrap-around gating technology. From the electrical characterization of the integrated NWs, a threshold voltage (V_th) of (6.6 ± 0.3) V is obtained, which is sufficient for safely operating these devices in an enhancement mode (E-mode). Aluminium oxide (Al₂O₃) grown by atomic layer deposition (ALD) is used as the gate dielectric material resulting in nearly-zero gate hysteresis (i.e., forward and backward sweep V_th shift (ΔV_th) of ~0.2 V). Regardless of the required device processing optimization for having better linearity profile, the upscaling capability of the devices from single NW to NW array in terms of the produced currents could already be demonstrated. Thus, the presented concept is expected to bridge the nanoworld into the macroscopic world, and subsequently paves the way to the realization of innovative large-scale vertical GaN nanoelectronics.

GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors

Vertically aligned gallium nitride (GaN) nanowire (NW) arrays have attracted a lot of attention because of their potential for novel devices in the fields of optoelectronics and nanoelectronics. In this work, GaN NW arrays have been designed and fabricated by combining suitable nanomachining processes including dry and wet etching. After inductively coupled plasma dry reactive ion etching, the GaN NWs are subsequently treated in wet chemical etching using AZ400K developer (i.e., with an activation energy of 0.69 ± 0.02 eV and a Cr mask) to form hexagonal and smooth a-plane sidewalls. Etching experiments using potassium hydroxide (KOH) water solution reveal that the sidewall orientation preference depends on etchant concentration. A model concerning surface bonding configuration on crystallography facets has been proposed to understand the anisotropic wet etching mechanism. Finally, NW array-based vertical field-effect transistors with wrap-gated structure have been fabricated. A device composed of 99 NWs exhibits enhancement mode operation with a threshold voltage of 1.5 V, a superior electrostatic control, and a high current output of >10 mA, which prevail potential applications in next-generation power switches and high-temperature digital circuits.

Effect of Auger recombination and leakage on the droop in InGaN/GaN quantum well LEDs

We investigate the effect of the epitaxial structure and the acceptor doping profile on the efficiency droop in InGaN/GaN LEDs by the physics based simulation of experimental internal quantum efficiency (IQE) characteristics. The device geometry is an integral part of our simulation approach. We demonstrate that even for single quantum well LEDs the droop depends critically on the acceptor doping profile. The Auger recombination was found to increase stronger than with the third power of the carrier density and has been found to dominate the droop in the roll over zone of the IQE. The fitted Auger coefficients are in the range of the values predicted by atomistic simulations.

[Sugar substitutes--their significance in preventing dental caries]

Sugar is the most prominent antagonist of teeth. In the Federal Republic of Germany, approx. 2 million tons of sugar were sold for human nutrition in 1986/87. The per capita consumption was 34.8 kg. The significance of sugar substitutes can be derived from the possibility to make some particularly caries-causing confectionery types tolerable for the teeth: On the one hand, they will thus lose their caries triggering property; on the other hand, they contribute to the remineralization of carious initial lesions by stimulating the saliva. Teeth-tolerable confectionery can be specially marked. Measures and media for familiarising the public with this special "brand" are shown.

[Long-Term Results of Surgical Treatment of Spinal Tumours in Children and Adolescents]

Catamneses of children up to the age of 16, operated on spinal tumours, are reported. Spinal tumours of this age account for about 15% of the total (all ages). There are about 50% intradural and 50% extradural tumours. The most frequent extradural tumours are sarcomas, followed by lipomas and dysontogenetic tumours like teratomas. Intradural tumours consist of intramedullary and extramedullary ones, about 50% each. Intramedullary tumours are gliomas, extramedullary ones may be neurinomas, meningeomas and vascular tumours. Time from onset of first diffuse symptoms up to clinical diagnosis depends on growth tendency of the tumour as well as on its localization. Hence, case history in cases of intramedullary gliomas usually covers two years, of sarcomas only a couple of months. In half of the cases, pain was the first symptom, followed by disturbed motor function. In more than 50% of the cases, complete restoration or significant improvement could be achieved by surgery. In the remaining half, there was either no change or even deterioration of the disturbed function. It seems justified to replace the former pessimistic attitude towards therapy of spinal tumours in childhood by a discret optimism. If in addition other spinal diseases like disk herniation are taken into account, prognosis is even more favourable.