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Henck H, Mauro D, Domaretskiy D, Philippi M, Memaran S, Zheng W, Lu Z, Shcherbakov D, Lau CN, Smirnov D, Balicas L, Watanabe K, Taniguchi T, Fal'ko VI, Gutiérrez-Lezama I, Ubrig N, Morpurgo AF. Light sources with bias tunable spectrum based on van der Waals interface transistors. Nat Commun 2022; 13:3917. [PMID: 35798736 PMCID: PMC9263129 DOI: 10.1038/s41467-022-31605-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/15/2022] [Accepted: 06/13/2022] [Indexed: 11/09/2022] Open
Abstract
Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a material platform enabling broad electrical tuning of the spectrum of electroluminescent devices remains challenging. Here, we propose light-emitting field-effect transistors based on van der Waals interfaces of atomically thin semiconductors as a promising class of devices to achieve this goal. We demonstrate that large spectral changes in room-temperature electroluminescence can be controlled both at the device assembly stage -by suitably selecting the material forming the interfaces- and on-chip, by changing the bias to modify the device operation point. Even though the precise relation between device bias and kinetics of the radiative transitions remains to be understood, our experiments show that the physical mechanism responsible for light emission is robust, making these devices compatible with simple large areas device production methods.
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Affiliation(s)
- Hugo Henck
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland.,Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland
| | - Diego Mauro
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland.,Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland
| | - Daniil Domaretskiy
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland.,Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland
| | - Marc Philippi
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland.,Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland
| | - Shahriar Memaran
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA.,Department of Physics, Florida State University, Tallahassee, FL, 32306-4350, USA
| | - Wenkai Zheng
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA.,Department of Physics, Florida State University, Tallahassee, FL, 32306-4350, USA
| | - Zhengguang Lu
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA.,Department of Physics, Florida State University, Tallahassee, FL, 32306-4350, USA
| | - Dmitry Shcherbakov
- Department of Physics, The Ohio State University, Columbus, OH, 43210, USA
| | - Chun Ning Lau
- Department of Physics, The Ohio State University, Columbus, OH, 43210, USA
| | - Dmitry Smirnov
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA.,Department of Physics, Florida State University, Tallahassee, FL, 32306-4350, USA
| | - Luis Balicas
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA.,Department of Physics, Florida State University, Tallahassee, FL, 32306-4350, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Vladimir I Fal'ko
- National Graphene Institute, University of Manchester, Booth Street East, M13 9PL, Manchester, UK.,Henry Royce Institute for Advanced Materials, M13 9PL, Manchester, UK
| | - Ignacio Gutiérrez-Lezama
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland.,Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland
| | - Nicolas Ubrig
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland. .,Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland.
| | - Alberto F Morpurgo
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland. .,Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, 1211, Geneva, Switzerland.
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2
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Long G, Henck H, Gibertini M, Dumcenco D, Wang Z, Taniguchi T, Watanabe K, Giannini E, Morpurgo AF. Persistence of Magnetism in Atomically Thin MnPS 3 Crystals. Nano Lett 2020; 20:2452-2459. [PMID: 32142288 DOI: 10.1021/acs.nanolett.9b05165] [Citation(s) in RCA: 56] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The magnetic state of atomically thin semiconducting layered antiferromagnets such as CrI3 and CrCl3 can be probed by forming tunnel barriers and measuring their resistance as a function of magnetic field (H) and temperature (T). This is possible because the spins within each individual layer are ferromagnetically aligned and the tunneling magnetoresistance depends on the relative orientation of the magnetization in adjacent layers. The situation is different for systems that are antiferromagnetic within the layers in which case it is unclear whether magnetoresistance measurements can provide information about the magnetic state. Here, we address this issue by investigating tunnel transport through atomically thin crystals of MnPS3, a van der Waals semiconductor that in the bulk exhibits easy-axis antiferromagnetic order within the layers. For thick multilayers below T ∼ 78 K, a T-dependent magnetoresistance sets in at μ0H ∼ 5 T and is found to track the boundary between the antiferromagnetic and the spin-flop phases known from bulk measurements. We show that the magnetoresistance persists as thickness is reduced with nearly unchanged characteristic temperature and magnetic field scales, albeit with a different dependence on H, indicating the persistence of magnetism in the ultimate limit of individual monolayers.
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Affiliation(s)
- Gen Long
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, CH-1211 Geneva, Switzerland
- Group of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Hugo Henck
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, CH-1211 Geneva, Switzerland
- Group of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Marco Gibertini
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, CH-1211 Geneva, Switzerland
- National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
| | - Dumitru Dumcenco
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Zhe Wang
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, CH-1211 Geneva, Switzerland
- Group of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Enrico Giannini
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Alberto F Morpurgo
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, CH-1211 Geneva, Switzerland
- Group of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, CH-1211 Geneva, Switzerland
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3
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Chaste J, Missaoui A, Huang S, Henck H, Ben Aziza Z, Ferlazzo L, Naylor C, Balan A, Johnson ATC, Braive R, Ouerghi A. Intrinsic Properties of Suspended MoS 2 on SiO 2/Si Pillar Arrays for Nanomechanics and Optics. ACS Nano 2018; 12:3235-3242. [PMID: 29553713 DOI: 10.1021/acsnano.7b07689] [Citation(s) in RCA: 25] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Semiconducting two-dimensional (2D) materials, such as transition-metal dichalcogenides (TMDs), are emerging in nanomechanics, optoelectronics, and thermal transport. In each of these fields, perfect control over 2D material properties including strain, doping, and heating is necessary, especially on the nanoscale. Here, we study clean devices consisting of membranes of single-layer MoS2 suspended on pillar arrays. Using Raman and photoluminescence spectroscopy, we have been able to extract, separate, and simulate the different contributions on the nanoscale and to correlate these to the pillar array design. This control has been used to design a periodic MoS2 mechanical membrane with a high reproducibility and to perform optomechanical measurements on arrays of similar resonators with a high-quality factor of 600 at ambient temperature, hence opening the way to multiresonator applications with 2D materials. At the same time, this study constitutes a reference for the future development of well-controlled optical emissions within 2D materials on periodic arrays with reproducible behavior. We measured a strong reduction of the MoS2 band gap induced by the strain generated from the pillars. A transition from direct to indirect band gap was observed in isolated tent structures made of MoS2 and pinched by a pillar. In fully suspended devices, simulations were performed allowing both the extraction of the thermal conductance and doping of the layer. Using the correlation between the influences of strain and doping on the MoS2 Raman spectrum, we have developed a simple, elegant method to extract the local strain in suspended and nonsuspended parts of a membrane. This opens the way to experimenting with tunable coupling between light emission and vibration.
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Affiliation(s)
- Julien Chaste
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, Université Paris-Saclay, C2N , 91460 Marcoussis , France
| | - Amine Missaoui
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, Université Paris-Saclay, C2N , 91460 Marcoussis , France
| | - Si Huang
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, Université Paris-Saclay, C2N , 91460 Marcoussis , France
| | - Hugo Henck
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, Université Paris-Saclay, C2N , 91460 Marcoussis , France
| | - Zeineb Ben Aziza
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, Université Paris-Saclay, C2N , 91460 Marcoussis , France
| | - Laurence Ferlazzo
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, Université Paris-Saclay, C2N , 91460 Marcoussis , France
| | - Carl Naylor
- Department of Physics and Astronomy , University of Pennsylvania , 209 S. 33rd Street , Philadelphia , Pennsylvania 19104-6396 , United States
| | - Adrian Balan
- Department of Physics and Astronomy , University of Pennsylvania , 209 S. 33rd Street , Philadelphia , Pennsylvania 19104-6396 , United States
| | - Alan T Charlie Johnson
- Department of Physics and Astronomy , University of Pennsylvania , 209 S. 33rd Street , Philadelphia , Pennsylvania 19104-6396 , United States
| | - Rémy Braive
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, Université Paris-Saclay, C2N , 91460 Marcoussis , France
- Université Paris Diderot , Sorbonne Paris Cité, 75207 Paris Cedex 13, France
| | - Abdelkarim Ouerghi
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, Université Paris-Saclay, C2N , 91460 Marcoussis , France
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4
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Pierucci D, Henck H, Ben Aziza Z, Naylor CH, Balan A, Rault JE, Silly MG, Dappe YJ, Bertran F, Le Fèvre P, Sirotti F, Johnson ATC, Ouerghi A. Tunable Doping in Hydrogenated Single Layered Molybdenum Disulfide. ACS Nano 2017; 11:1755-1761. [PMID: 28146631 DOI: 10.1021/acsnano.6b07661] [Citation(s) in RCA: 46] [Impact Index Per Article: 6.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Structural defects in the molybdenum disulfide (MoS2) monolayer are widely known for strongly altering its properties. Therefore, a deep understanding of these structural defects and how they affect MoS2 electronic properties is of fundamental importance. Here, we report on the incorporation of atomic hydrogen in monolayered MoS2 to tune its structural defects. We demonstrate that the electronic properties of single layer MoS2 can be tuned from the intrinsic electron (n) to hole (p) doping via controlled exposure to atomic hydrogen at room temperature. Moreover, this hydrogenation process represents a viable technique to completely saturate the sulfur vacancies present in the MoS2 flakes. The successful incorporation of hydrogen in MoS2 leads to the modification of the electronic properties as evidenced by high resolution X-ray photoemission spectroscopy and density functional theory calculations. Micro-Raman spectroscopy and angle resolved photoemission spectroscopy measurements show the high quality of the hydrogenated MoS2 confirming the efficiency of our hydrogenation process. These results demonstrate that the MoS2 hydrogenation could be a significant and efficient way to achieve tunable doping of transition metal dichalcogenides (TMD) materials with non-TMD elements.
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Affiliation(s)
- Debora Pierucci
- Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay , C2N - Marcoussis, F91460 Marcoussis, France
| | - Hugo Henck
- Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay , C2N - Marcoussis, F91460 Marcoussis, France
| | - Zeineb Ben Aziza
- Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay , C2N - Marcoussis, F91460 Marcoussis, France
| | - Carl H Naylor
- Department of Physics and Astronomy, University of Pennsylvania , 209S 33rd Street, Philadelphia, Pennsylvania 19104, United States
| | - Adrian Balan
- Department of Physics and Astronomy, University of Pennsylvania , 209S 33rd Street, Philadelphia, Pennsylvania 19104, United States
| | - Julien E Rault
- Synchrotron-SOLEIL , Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Mathieu G Silly
- Synchrotron-SOLEIL , Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Yannick J Dappe
- SPEC, CEA, CNRS, Université Paris-Saclay , CEA Saclay, F91191 Gif-sur-Yvette Cedex, France
| | - François Bertran
- Synchrotron-SOLEIL , Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Patrick Le Fèvre
- Synchrotron-SOLEIL , Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Fausto Sirotti
- Synchrotron-SOLEIL , Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - A T Charlie Johnson
- Department of Physics and Astronomy, University of Pennsylvania , 209S 33rd Street, Philadelphia, Pennsylvania 19104, United States
| | - Abdelkarim Ouerghi
- Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay , C2N - Marcoussis, F91460 Marcoussis, France
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5
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Ben Aziza Z, Henck H, Pierucci D, Silly MG, Lhuillier E, Patriarche G, Sirotti F, Eddrief M, Ouerghi A. van der Waals Epitaxy of GaSe/Graphene Heterostructure: Electronic and Interfacial Properties. ACS Nano 2016; 10:9679-9686. [PMID: 27715006 DOI: 10.1021/acsnano.6b05521] [Citation(s) in RCA: 47] [Impact Index Per Article: 5.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
Stacking two-dimensional materials in so-called van der Waals (vdW) heterostructures, like the combination of GaSe and graphene, provides the ability to obtain hybrid systems that are suitable to design optoelectronic devices. Here, we report the structural and electronic properties of the direct growth of multilayered GaSe by molecular beam epitaxy on graphene. Reflection high-energy electron diffraction images exhibited sharp streaky features indicative of a high-quality GaSe layer produced via a vdW epitaxy. Micro-Raman spectroscopy showed that, after the vdW heterointerface formation, the Raman signature of pristine graphene is preserved. However, the GaSe film tuned the charge density of graphene layer by shifting the Dirac point by about 80 meV toward lower binding energies, attesting to an electron transfer from graphene to GaSe. Angle-resolved photoemission spectroscopy (ARPES) measurements showed that the maximum of the valence band of the few layers of GaSe are located at the Γ point at a binding energy of about -0.73 eV relative to the Fermi level (p-type doping). From the ARPES measurements, a hole effective mass defined along the ΓM direction and equal to about m*/m0 = -1.1 was determined. By coupling the ARPES data with high-resolution X-ray photoemission spectroscopy measurements, the Schottky interface barrier height was estimated to be 1.2 eV. These findings allow a deeper understanding of the interlayer interactions and the electronic structure of the GaSe/graphene vdW heterostructure.
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Affiliation(s)
- Zeineb Ben Aziza
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, Université Paris-Saclay , C2N-Marcoussis, 91460 Marcoussis, France
| | - Hugo Henck
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, Université Paris-Saclay , C2N-Marcoussis, 91460 Marcoussis, France
| | - Debora Pierucci
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, Université Paris-Saclay , C2N-Marcoussis, 91460 Marcoussis, France
| | - Mathieu G Silly
- Synchrotron-SOLEIL , Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Emmanuel Lhuillier
- Sorbonne Universités, UPMC Université Paris 06, UMR 7588, INSP , F-75005 Paris, France
- CNRS, UMR 7588, Institut des NanoSciences de Paris (INSP) , F-75005 Paris, France
| | - Gilles Patriarche
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, Université Paris-Saclay , C2N-Marcoussis, 91460 Marcoussis, France
| | - Fausto Sirotti
- Synchrotron-SOLEIL , Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Mahmoud Eddrief
- Sorbonne Universités, UPMC Université Paris 06, UMR 7588, INSP , F-75005 Paris, France
- CNRS, UMR 7588, Institut des NanoSciences de Paris (INSP) , F-75005 Paris, France
| | - Abdelkarim Ouerghi
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, Université Paris-Saclay , C2N-Marcoussis, 91460 Marcoussis, France
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6
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Pierucci D, Henck H, Avila J, Balan A, Naylor CH, Patriarche G, Dappe YJ, Silly MG, Sirotti F, Johnson ATC, Asensio MC, Ouerghi A. Band Alignment and Minigaps in Monolayer MoS2-Graphene van der Waals Heterostructures. Nano Lett 2016; 16:4054-4061. [PMID: 27281693 DOI: 10.1021/acs.nanolett.6b00609] [Citation(s) in RCA: 48] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Two-dimensional layered MoS2 shows great potential for nanoelectronic and optoelectronic devices due to its high photosensitivity, which is the result of its indirect to direct band gap transition when the bulk dimension is reduced to a single monolayer. Here, we present an exhaustive study of the band alignment and relativistic properties of a van der Waals heterostructure formed between single layers of MoS2 and graphene. A sharp, high-quality MoS2-graphene interface was obtained and characterized by micro-Raman spectroscopy, high-resolution X-ray photoemission spectroscopy (HRXPS), and scanning high-resolution transmission electron microscopy (STEM/HRTEM). Moreover, direct band structure determination of the MoS2/graphene van der Waals heterostructure monolayer was carried out using angle-resolved photoemission spectroscopy (ARPES), shedding light on essential features such as doping, Fermi velocity, hybridization, and band-offset of the low energy electronic dynamics found at the interface. We show that, close to the Fermi level, graphene exhibits a robust, almost perfect, gapless, and n-doped Dirac cone and no significant charge transfer doping is detected from MoS2 to graphene. However, modification of the graphene band structure occurs at rather larger binding energies, as the opening of several miniband-gaps is observed. These miniband-gaps resulting from the overlay of MoS2 and the graphene layer lattice impose a superperiodic potential.
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Affiliation(s)
- Debora Pierucci
- Centre de Nanosciences et de Nanotechnologies, CNRS Univ. Paris-Sud, Université Paris-Saclay , C2N - Marcoussis, 91460 Marcoussis, France
| | - Hugo Henck
- Centre de Nanosciences et de Nanotechnologies, CNRS Univ. Paris-Sud, Université Paris-Saclay , C2N - Marcoussis, 91460 Marcoussis, France
| | - Jose Avila
- Synchrotron-SOLEIL , Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Adrian Balan
- Department of Physics and Astronomy, University of Pennsylvania , 209S 33rd Street, Philadelphia, Pennsylvania 19104 6396, United States
- LICSEN, NIMBE, CEA, CNRS, Université Paris Saclay , CEA Saclay, 91191 Gif-sur-Yvette, France
| | - Carl H Naylor
- Department of Physics and Astronomy, University of Pennsylvania , 209S 33rd Street, Philadelphia, Pennsylvania 19104 6396, United States
| | - Gilles Patriarche
- Centre de Nanosciences et de Nanotechnologies, CNRS Univ. Paris-Sud, Université Paris-Saclay , C2N - Marcoussis, 91460 Marcoussis, France
| | - Yannick J Dappe
- SPEC, CEA, CNRS, Université Paris Saclay , CEA Saclay, 91191 Gif-sur-Yvette Cedex, France
| | - Mathieu G Silly
- Synchrotron-SOLEIL , Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Fausto Sirotti
- Synchrotron-SOLEIL , Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - A T Charlie Johnson
- Department of Physics and Astronomy, University of Pennsylvania , 209S 33rd Street, Philadelphia, Pennsylvania 19104 6396, United States
| | - Maria C Asensio
- Synchrotron-SOLEIL , Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Abdelkarim Ouerghi
- Centre de Nanosciences et de Nanotechnologies, CNRS Univ. Paris-Sud, Université Paris-Saclay , C2N - Marcoussis, 91460 Marcoussis, France
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7
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Pierucci D, Henck H, Naylor CH, Sediri H, Lhuillier E, Balan A, Rault JE, Dappe YJ, Bertran F, Fèvre PL, Johnson ATC, Ouerghi A. Large area molybdenum disulphide- epitaxial graphene vertical Van der Waals heterostructures. Sci Rep 2016; 6:26656. [PMID: 27246929 PMCID: PMC4894673 DOI: 10.1038/srep26656] [Citation(s) in RCA: 68] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/15/2016] [Accepted: 05/03/2016] [Indexed: 11/09/2022] Open
Abstract
Two-dimensional layered transition metal dichalcogenides (TMDCs) show great potential for optoelectronic devices due to their electronic and optical properties. A metal-semiconductor interface, as epitaxial graphene - molybdenum disulfide (MoS2), is of great interest from the standpoint of fundamental science, as it constitutes an outstanding platform to investigate the interlayer interaction in van der Waals heterostructures. Here, we study large area MoS2-graphene-heterostructures formed by direct transfer of chemical-vapor deposited MoS2 layer onto epitaxial graphene/SiC. We show that via a direct transfer, which minimizes interface contamination, we can obtain high quality and homogeneous van der Waals heterostructures. Angle-resolved photoemission spectroscopy (ARPES) measurements combined with Density Functional Theory (DFT) calculations show that the transition from indirect to direct bandgap in monolayer MoS2 is maintained in these heterostructures due to the weak van der Waals interaction with epitaxial graphene. A downshift of the Raman 2D band of the graphene, an up shift of the A1g peak of MoS2 and a significant photoluminescence quenching are observed for both monolayer and bilayer MoS2 as a result of charge transfer from MoS2 to epitaxial graphene under illumination. Our work provides a possible route to modify the thin film TDMCs photoluminescence properties via substrate engineering for future device design.
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Affiliation(s)
- Debora Pierucci
- Laboratoire de Photonique et de Nanostructures (CNRS- LPN),
Route de Nozay, 91460
Marcoussis, France
| | - Hugo Henck
- Laboratoire de Photonique et de Nanostructures (CNRS- LPN),
Route de Nozay, 91460
Marcoussis, France
| | - Carl H. Naylor
- Department of Physics and Astronomy, University of
Pennsylvania, 209S 33rd Street, Philadelphia,
Pennsylvania
19104, USA
| | - Haikel Sediri
- Laboratoire de Photonique et de Nanostructures (CNRS- LPN),
Route de Nozay, 91460
Marcoussis, France
| | - Emmanuel Lhuillier
- Institut des Nanosciences de Paris, UPMC, 4 place Jussieu,
boîte courrier 840, 75252
Paris cedex 05, France
| | - Adrian Balan
- Department of Physics and Astronomy, University of
Pennsylvania, 209S 33rd Street, Philadelphia,
Pennsylvania
19104, USA
- Laboratoire d’Innovation en Chimie des Surfaces et
Nanosciences, DSM/NIMBE/LICSEN (CNRS UMR 3685), CEA Saclay,
91191
Gif-sur-Yvette Cedex, France
| | - Julien E. Rault
- Synchrotron-SOLEIL, Saint-Aubin, BP48,
F91192 Gif sur Yvette Cedex, France
| | - Yannick J. Dappe
- SPEC, CEA, CNRS, Universite Paris-Saclay, CEA Saclay,
91191 Gif-sur-Yvette Cedex, France
| | - François Bertran
- Synchrotron-SOLEIL, Saint-Aubin, BP48,
F91192 Gif sur Yvette Cedex, France
| | - Patrick Le Fèvre
- Synchrotron-SOLEIL, Saint-Aubin, BP48,
F91192 Gif sur Yvette Cedex, France
| | - A. T. Charlie Johnson
- Department of Physics and Astronomy, University of
Pennsylvania, 209S 33rd Street, Philadelphia,
Pennsylvania
19104, USA
| | - Abdelkarim Ouerghi
- Laboratoire de Photonique et de Nanostructures (CNRS- LPN),
Route de Nozay, 91460
Marcoussis, France
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8
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Hajlaoui M, Sediri H, Pierucci D, Henck H, Phuphachong T, Silly MG, de Vaulchier LA, Sirotti F, Guldner Y, Belkhou R, Ouerghi A. High Electron Mobility in Epitaxial Trilayer Graphene on Off-axis SiC(0001). Sci Rep 2016; 6:18791. [PMID: 26739366 PMCID: PMC4704025 DOI: 10.1038/srep18791] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/09/2015] [Accepted: 11/09/2015] [Indexed: 11/09/2022] Open
Abstract
The van de Waals heterostructure formed by an epitaxial trilayer graphene is of particular interest due to its unique tunable electronic band structure and stacking sequence. However, to date, there has been a lack in the fundamental understanding of the electronic properties of epitaxial trilayer graphene. Here, we investigate the electronic properties of large-area epitaxial trilayer graphene on a 4° off-axis SiC(0001) substrate. Micro-Raman mappings and atomic force microscopy (AFM) confirmed predominantly trilayer on the sample obtained under optimized conditions. We used angle-resolved photoemission spectroscopy (ARPES) and Density Functional Theory (DFT) calculations to study in detail the structure of valence electronic states, in particular the dispersion of π bands in reciprocal space and the exact determination of the number of graphene layers. Using far-infrared magneto-transmission (FIR-MT), we demonstrate, that the electron cyclotron resonance (CR) occurs between Landau levels with a (B)(1/2) dependence. The CR line-width is consistent with a high Dirac fermions mobility of ~3000 cm(2)·V(-1)·s(-1) at 4 K.
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Affiliation(s)
- Mahdi Hajlaoui
- CNRS- Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis, France.,Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Haikel Sediri
- CNRS- Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis, France
| | - Debora Pierucci
- CNRS- Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis, France
| | - Hugo Henck
- CNRS- Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis, France
| | - Thanyanan Phuphachong
- Laboratoire Pierre Aigrain, Ecole Normale Supérieure-PSL Research University, CNRS, Université Pierre &Marie Curie-Sorbonne Universités, 24 rue Lhomond, 75005 Paris, France
| | - Mathieu G Silly
- Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Louis-Anne de Vaulchier
- Laboratoire Pierre Aigrain, Ecole Normale Supérieure-PSL Research University, CNRS, Université Pierre &Marie Curie-Sorbonne Universités, 24 rue Lhomond, 75005 Paris, France
| | - Fausto Sirotti
- Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Yves Guldner
- Laboratoire Pierre Aigrain, Ecole Normale Supérieure-PSL Research University, CNRS, Université Pierre &Marie Curie-Sorbonne Universités, 24 rue Lhomond, 75005 Paris, France
| | - Rachid Belkhou
- Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Abdelkarim Ouerghi
- CNRS- Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis, France
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Sediri H, Pierucci D, Hajlaoui M, Henck H, Patriarche G, Dappe YJ, Yuan S, Toury B, Belkhou R, Silly MG, Sirotti F, Boutchich M, Ouerghi A. Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure. Sci Rep 2015; 5:16465. [PMID: 26585245 PMCID: PMC4653732 DOI: 10.1038/srep16465] [Citation(s) in RCA: 22] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/09/2015] [Accepted: 10/05/2015] [Indexed: 11/24/2022] Open
Abstract
Stacking various two-dimensional atomic crystals is a feasible approach to creating unique multilayered van der Waals heterostructures with tailored properties. Herein for the first time, we present a controlled preparation of large-area h-BN/graphene heterostructures via a simple chemical deposition of h-BN layers on epitaxial graphene/SiC(0001). Van der Waals forces, which are responsible for the cohesion of the multilayer system, give rise to an abrupt interface without interdiffusion between graphene and h-BN, as shown by X-ray Photoemission Spectroscopy (XPS) and direct observation using scanning and High-Resolution Transmission Electron Microscopy (STEM/HRTEM). The electronic properties of graphene, such as the Dirac cone, remain intact and no significant charge transfer i.e. doping, is observed. These results are supported by Density Functional Theory (DFT) calculations. We demonstrate that the h-BN capped graphene allows the fabrication of vdW heterostructures without altering the electronic properties of graphene.
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Affiliation(s)
- Haikel Sediri
- Laboratoire de Photonique et de Nanostructures (LPN), CNRS, Université Paris-Saclay, route de Nozay, F-91460 Marcoussis, France
| | - Debora Pierucci
- Laboratoire de Photonique et de Nanostructures (LPN), CNRS, Université Paris-Saclay, route de Nozay, F-91460 Marcoussis, France
| | - Mahdi Hajlaoui
- Laboratoire de Photonique et de Nanostructures (LPN), CNRS, Université Paris-Saclay, route de Nozay, F-91460 Marcoussis, France.,Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Hugo Henck
- Laboratoire de Photonique et de Nanostructures (LPN), CNRS, Université Paris-Saclay, route de Nozay, F-91460 Marcoussis, France
| | - Gilles Patriarche
- Laboratoire de Photonique et de Nanostructures (LPN), CNRS, Université Paris-Saclay, route de Nozay, F-91460 Marcoussis, France
| | - Yannick J Dappe
- SPEC, CEA, CNRS, Université Paris Saclay, CEA Saclay, 91191, Gif-Sur-Yvette, France
| | - Sheng Yuan
- Laboratoire des Multimatériaux et Interfaces, UMR CNRS 5615, Université Lyon I, Université de Lyon, France
| | - Bérangère Toury
- Laboratoire des Multimatériaux et Interfaces, UMR CNRS 5615, Université Lyon I, Université de Lyon, France
| | - Rachid Belkhou
- Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Mathieu G Silly
- Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Fausto Sirotti
- Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Mohamed Boutchich
- GeePs, CNRS UMR8507, CentraleSupelec, Univ Paris-Sud, Sorbonne Universités-UPMC Univ Paris 06, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France
| | - Abdelkarim Ouerghi
- Laboratoire de Photonique et de Nanostructures (LPN), CNRS, Université Paris-Saclay, route de Nozay, F-91460 Marcoussis, France
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