A Geometrically Well-Defined and Systematically Tunable Experimental Model to Transition from Planar to Mesoporous Perovskite Solar Cells

A series of perovskite solar cells with systematically varying surface area of the interface between n-type electron conducting layer (TiO₂) and perovskite are prepared by using an ordered array of straight, cylindrical nanopores generated by anodizing an aluminum layer evaporated onto a transparent conducting electrode. A series of samples with pore length varied from 100 to 500 nm are compared to each other and complemented by a classical planar cell and a mesoporous counterpart. All samples are characterized in terms of morphology, chemistry, optical properties, and performance. All samples absorb light to the same degree, and the increased interface area does not generate enhanced recombination. However, the short circuit current density increases monotonically with the specific surface area, indicating improved charge extraction efficiency. The importance of the slow interfacial rearrangement of ions associated with planar perovskite cells is shown to decrease in a systematic manner as the interfacial surface area increases. The results demonstrate that planar and mesoporous cells obey to the same physical principles and differ from each other quantitatively, not qualitatively. Additionally, the study shows that a significantly lower TiO₂ surface area compared to mesoporous TiO₂ is needed for an equal charge extraction.

A Self-Ordered Nanostructured Transparent Electrode of High Structural Quality and Corresponding Functional Performance

The preparation of a highly ordered nanostructured transparent electrode based on a combination of nanosphere lithography and anodization is presented. The size of perfectly ordered pore domains is improved by an order of magnitude with respect to the state of the art. The concomitantly reduced density of defect pores increases the fraction of pores that are in good electrical contact with the underlying transparent conductive substrate. This improvement in structural quality translates directly and linearly into an improved performance of energy conversion devices built from such electrodes in a linear manner.

ZnS Ultrathin Interfacial Layers for Optimizing Carrier Management in Sb2S3-based Photovoltaics

Antimony chalcogenides represent a family of materials of low toxicity and relative abundance, with a high potential for future sustainable solar energy conversion technology. However, solar cells based on antimony chalcogenides present open-circuit voltage losses that limit their efficiencies. These losses are attributed to several recombination mechanisms, with interfacial recombination being considered as one of the dominant processes. In this work, we exploit atomic layer deposition (ALD) to grow a series of ultrathin ZnS interfacial layers at the TiO2/Sb2S3 interface to mitigate interfacial recombination and to increase the carrier lifetime. ALD allows for very accurate control over the ZnS interlayer thickness on the ångström scale (0-1.5 nm) and to deposit highly pure Sb2S3. Our systematic study of the photovoltaic and optoelectronic properties of these devices by impedance spectroscopy and transient absorption concludes that the optimum ZnS interlayer thickness of 1.0 nm achieves the best balance between the beneficial effect of an increased recombination resistance at the interface and the deleterious barrier behavior of the wide-bandgap semiconductor ZnS. This optimization allows us to reach an overall power conversion efficiency of 5.09% in planar configuration.

In situ microsynthesis of polyaniline: synthesis–structure–conductivity correlation

The multi-analytical study of polyaniline samples obtained by in situ microsynthesis was performed.

Solid state interdigitated Sb2S3 based TiO2 nanotube solar cells

TiO₂ nanotubes generated by anodization of metallic titanium sputter-coated on indium tin oxide (ITO) substrates are used as a conductive scaffold for all solid-state Sb₂S₃-sensitized extremely thin absorber (ETA) solar cells. A blocking layer of TiO₂ placed between Ti and ITO in combination with optimized Ti deposition and anodization conditions enables the formation of crack-free layers of straight, cylindrical TiO₂ nanotubes of tunable length and diameter. ALD (atomic layer deposition) is subsequently used to coat this substrate conformally with a highly pure Sb₂S₃ light absorber layer under an inert atmosphere. The high absorption coefficient of Sb₂S₃ as compared to molecular dyes allows for the utilization of very short nanotubes, which facilitates the infiltration of the organic hole transport material and formation of a p–i–n heterojunction in an interdigitated and tunable geometry. We investigate the influence of nanotube length and of the absorber thickness to enhance the photocurrent value to twice that of planar reference structures.

TiO₂ nanotubes generated by anodization of metallic titanium sputter-coated on indium tin oxide (ITO) substrates are used as a conductive scaffold for all-solid-state Sb₂S₃-sensitized extremely thin absorber (ETA) solar cells.

Adjusting Interfacial Chemistry and Electronic Properties of Photovoltaics Based on a Highly Pure Sb2S3 Absorber by Atomic Layer Deposition

The combination of oxide and heavier chalcogenide layers in thin film photovoltaics suffers limitations associated with oxygen incorporation and sulfur deficiency in the chalcogenide layer or with a chemical incompatibility which results in dewetting issues and defect states at the interface. Here, we establish atomic layer deposition (ALD) as a tool to overcome these limitations. ALD allows one to obtain highly pure Sb₂S₃ light absorber layers, and we exploit this technique to generate an additional interfacial layer consisting of 1.5 nm ZnS. This ultrathin layer simultaneously resolves dewetting and passivates defect states at the interface. We demonstrate via transient absorption spectroscopy that interfacial electron recombination is one order of magnitude slower at the ZnS-engineered interface than hole recombination at the Sb₂S₃/P3HT interface. The comparison of solar cells with and without oxide incorporation in Sb₂S₃, with and without the ultrathin ZnS interlayer, and with systematically varied Sb₂S₃ thickness provides a complete picture of the physical processes at work in the devices.

Ordered nanopore arrays with large interpore distances via one-step anodization

Preparation of pre-patterned alumina substrates using bottom-up techniques compatible with nanotechnology applications is still a challenge. We present a novel methodology to achieve superior order in 'anodic' alumina with large interpore distances by a convenient one-step anodization process. The use of transparent insulators renders such anodic layers applicable as templates for nanostructured photovoltaic or photoelectrochemical devices.

Spin configuration in isolated FeCoCu nanowires modulated in diameter

Cylindrical Fe28Co67Cu5 nanowires modulated in diameter between 22 and 35 nm are synthesized by electroplating into the nanopores of alumina membranes. High-sensitivity MFM imaging (with a detection noise of 1 μN m(-1)) reveals the presence of single-domain structures in remanence with strong contrast at the ends of the nanowires, as well as at the transition regions where the diameter is modulated. Micromagnetic simulations suggest that curling of the magnetization takes place at these transition sites, extending over 10-20 nm and giving rise to stray fields measurable with our MFM. An additional weaker contrast is imaged, which is interpreted to arise from inhomogeneities in the nanowire diameter.