Effects of empagliflozin on progression of chronic kidney disease: a prespecified secondary analysis from the empa-kidney trial

BACKGROUND

Sodium-glucose co-transporter-2 (SGLT2) inhibitors reduce progression of chronic kidney disease and the risk of cardiovascular morbidity and mortality in a wide range of patients. However, their effects on kidney disease progression in some patients with chronic kidney disease are unclear because few clinical kidney outcomes occurred among such patients in the completed trials. In particular, some guidelines stratify their level of recommendation about who should be treated with SGLT2 inhibitors based on diabetes status and albuminuria. We aimed to assess the effects of empagliflozin on progression of chronic kidney disease both overall and among specific types of participants in the EMPA-KIDNEY trial.

METHODS

EMPA-KIDNEY, a randomised, controlled, phase 3 trial, was conducted at 241 centres in eight countries (Canada, China, Germany, Italy, Japan, Malaysia, the UK, and the USA), and included individuals aged 18 years or older with an estimated glomerular filtration rate (eGFR) of 20 to less than 45 mL/min per 1·73 m2, or with an eGFR of 45 to less than 90 mL/min per 1·73 m2 with a urinary albumin-to-creatinine ratio (uACR) of 200 mg/g or higher. We explored the effects of 10 mg oral empagliflozin once daily versus placebo on the annualised rate of change in estimated glomerular filtration rate (eGFR slope), a tertiary outcome. We studied the acute slope (from randomisation to 2 months) and chronic slope (from 2 months onwards) separately, using shared parameter models to estimate the latter. Analyses were done in all randomly assigned participants by intention to treat. EMPA-KIDNEY is registered at ClinicalTrials.gov, NCT03594110.

FINDINGS

Between May 15, 2019, and April 16, 2021, 6609 participants were randomly assigned and then followed up for a median of 2·0 years (IQR 1·5-2·4). Prespecified subgroups of eGFR included 2282 (34·5%) participants with an eGFR of less than 30 mL/min per 1·73 m2, 2928 (44·3%) with an eGFR of 30 to less than 45 mL/min per 1·73 m2, and 1399 (21·2%) with an eGFR 45 mL/min per 1·73 m2 or higher. Prespecified subgroups of uACR included 1328 (20·1%) with a uACR of less than 30 mg/g, 1864 (28·2%) with a uACR of 30 to 300 mg/g, and 3417 (51·7%) with a uACR of more than 300 mg/g. Overall, allocation to empagliflozin caused an acute 2·12 mL/min per 1·73 m2 (95% CI 1·83-2·41) reduction in eGFR, equivalent to a 6% (5-6) dip in the first 2 months. After this, it halved the chronic slope from -2·75 to -1·37 mL/min per 1·73 m2 per year (relative difference 50%, 95% CI 42-58). The absolute and relative benefits of empagliflozin on the magnitude of the chronic slope varied significantly depending on diabetes status and baseline levels of eGFR and uACR. In particular, the absolute difference in chronic slopes was lower in patients with lower baseline uACR, but because this group progressed more slowly than those with higher uACR, this translated to a larger relative difference in chronic slopes in this group (86% [36-136] reduction in the chronic slope among those with baseline uACR <30 mg/g compared with a 29% [19-38] reduction for those with baseline uACR ≥2000 mg/g; ptrend<0·0001).

INTERPRETATION

Empagliflozin slowed the rate of progression of chronic kidney disease among all types of participant in the EMPA-KIDNEY trial, including those with little albuminuria. Albuminuria alone should not be used to determine whether to treat with an SGLT2 inhibitor.

FUNDING

Boehringer Ingelheim and Eli Lilly.

Impact of primary kidney disease on the effects of empagliflozin in patients with chronic kidney disease: secondary analyses of the EMPA-KIDNEY trial

BACKGROUND

The EMPA-KIDNEY trial showed that empagliflozin reduced the risk of the primary composite outcome of kidney disease progression or cardiovascular death in patients with chronic kidney disease mainly through slowing progression. We aimed to assess how effects of empagliflozin might differ by primary kidney disease across its broad population.

METHODS

EMPA-KIDNEY, a randomised, controlled, phase 3 trial, was conducted at 241 centres in eight countries (Canada, China, Germany, Italy, Japan, Malaysia, the UK, and the USA). Patients were eligible if their estimated glomerular filtration rate (eGFR) was 20 to less than 45 mL/min per 1·73 m2, or 45 to less than 90 mL/min per 1·73 m2 with a urinary albumin-to-creatinine ratio (uACR) of 200 mg/g or higher at screening. They were randomly assigned (1:1) to 10 mg oral empagliflozin once daily or matching placebo. Effects on kidney disease progression (defined as a sustained ≥40% eGFR decline from randomisation, end-stage kidney disease, a sustained eGFR below 10 mL/min per 1·73 m2, or death from kidney failure) were assessed using prespecified Cox models, and eGFR slope analyses used shared parameter models. Subgroup comparisons were performed by including relevant interaction terms in models. EMPA-KIDNEY is registered with ClinicalTrials.gov, NCT03594110.

FINDINGS

Between May 15, 2019, and April 16, 2021, 6609 participants were randomly assigned and followed up for a median of 2·0 years (IQR 1·5-2·4). Prespecified subgroupings by primary kidney disease included 2057 (31·1%) participants with diabetic kidney disease, 1669 (25·3%) with glomerular disease, 1445 (21·9%) with hypertensive or renovascular disease, and 1438 (21·8%) with other or unknown causes. Kidney disease progression occurred in 384 (11·6%) of 3304 patients in the empagliflozin group and 504 (15·2%) of 3305 patients in the placebo group (hazard ratio 0·71 [95% CI 0·62-0·81]), with no evidence that the relative effect size varied significantly by primary kidney disease (pheterogeneity=0·62). The between-group difference in chronic eGFR slopes (ie, from 2 months to final follow-up) was 1·37 mL/min per 1·73 m2 per year (95% CI 1·16-1·59), representing a 50% (42-58) reduction in the rate of chronic eGFR decline. This relative effect of empagliflozin on chronic eGFR slope was similar in analyses by different primary kidney diseases, including in explorations by type of glomerular disease and diabetes (p values for heterogeneity all >0·1).

INTERPRETATION

In a broad range of patients with chronic kidney disease at risk of progression, including a wide range of non-diabetic causes of chronic kidney disease, empagliflozin reduced risk of kidney disease progression. Relative effect sizes were broadly similar irrespective of the cause of primary kidney disease, suggesting that SGLT2 inhibitors should be part of a standard of care to minimise risk of kidney failure in chronic kidney disease.

FUNDING

Boehringer Ingelheim, Eli Lilly, and UK Medical Research Council.

Visualizing Atomic Quantum Defects in Ultrathin 1T-PtTe2

Defects are of significant importance to determine and improve the distinct properties of 2D materials, such as electronic, optical, and catalytic performance. In this report, we observe four types of point defects in atomically thin flakes of 1T-PtTe₂ by using low-temperature scanning tunnelling microscopy and spectroscopy (STM/S). Through the combination of STM imaging and simulations, such defects are identified as a single tellurium vacancy from each side of the top PtTe₂ layer and a single platinum vacancy from the topmost and next layer. The density functional theory (DFT) calculations reveal that the platinum vacancies from both the monolayer and bilayer exhibit a local magnetic moment. In bilayer PtTe₂, the interlayer coulomb screening effect reduces the local magnetic momentum of the single platinum vacancy. Our research provides meaningful guidance for further experiments about the effects of intrinsic defects on potential functions of thin 1T-PtTe₂, such as catalysis and spintronic applications.

Gate-Tunable Anomalous Hall Effect in Stacked van der Waals Ferromagnetic Insulator-Topological Insulator Heterostructures

The search of novel topological states, such as the quantum anomalous Hall insulator and chiral Majorana fermions, has motivated different schemes to introduce magnetism into topological insulators. A promising scheme is using the magnetic proximity effect (MPE), where a ferromagnetic insulator magnetizes the topological insulator. Most of these heterostructures are synthesized by growth techniques which prevent mixing many of the available ferromagnetic and topological insulators due to difference in growth conditions. Here, we demonstrate that MPE can be obtained in heterostructures stacked via the dry transfer of flakes of van der Waals ferromagnetic and topological insulators (Cr₂Ge₂Te₆/BiSbTeSe₂), as evidenced in the observation of an anomalous Hall effect (AHE). Furthermore, devices made from these heterostructures allow modulation of the AHE when controlling the carrier density via electrostatic gating. These results show that simple mechanical transfer of magnetic van der Waals materials provides another possible avenue to magnetize topological insulators by MPE.

Separation in the Roles of Carrier Transport and Light Emission in Light-Emitting Organic Transistors with a Bilayer Configuration

To develop high-performance organic light-emitting organic field-effect transistors (LE-OFETs), a fundamental problem in organic semiconductors is to compromise light luminescent efficiency for high carrier mobility and vice versa. Therefore, LE-OFETs can avoid this problem by separating the light-emission and carrier-transport functions. Here, a bilayer LE-OFET composed of a tetracene crystal as a carrier transporter (bottom crystal) and a 4-(dicyanomethylene)-2-methyl-6-( p-dimethylaminostyryl)-4 H-pyran (DCM1)-doped tetracene crystal as a light emitter (top crystal) was fabricated. Red light-emission color, which is distinct from the green emission color of tetracene, was detected in the top crystal. Light emission from the top layer was prohibited when an insulating thin film was inserted between the two crystals. These observations indicate that excitons are formed in the bottom crystal and transferred to the top crystal, emitting reddish light. Bilayer LE-OFETs have the advantage of providing both high current density and a bright emission for high-performance light-emitting FETs.

Three-dimensional porous graphene networks expand graphene-based electronic device applications

In recent years, there has been increasing demand for 3D porous graphene structures with excellent 2D characteristics and great potential. As one avenue, several approaches for fabricating 3D porous graphene network structures have been proposed to realize multi-functional graphene materials with 2D graphene structures. Herein, we overview characteristics of 3D porous graphene for applications in future electronic devices along with physical insights into "2D to 3D graphene", in which the characters of 2D graphene such as massless Dirac fermions are well preserved. The present review thus summarizes recent 3D porous graphene studies with a perspective for providing new and board applications of graphene in electronic devices.

Carrier-doped aromatic hydrocarbons: a new platform in condensed matter chemistry and physics

High quality bulk samples of the first four polyacenes, naphthalene, anthracene, tetracene, and pentacene, doped with alkali metal in 1 : 1 and 1 : 2 stoichiometries were prepared and their fundamental properties were systematically studied. The carrier doped typical aromatic hydrocarbons showed a large variety of properties as well as charge transfer complexes and metal doped fullerides. We open a new category in condensed matter chemistry and physics.

Crossover from localized to itinerant states in hydrocarbon Mott insulators

Crossover from an itinerant state to an isolated electronic state in electron-doped polycyclic aromatic hydrocarbon (PAH) was studied for the two smallest zigzag-type molecules of naphthalene (NN) and anthracene (AN) by focusing on their 1 : 1 stoichiometry, A₁(NN) and A₁(AN), with alkali metals (A = K and Rb). The competition between on-site Coulombic repulsion energy (U) and bandwidth (W) was argued in terms of their magnetic and electrical properties upon lattice expansion, when A varies from K, with a smaller ionic radius, to Rb, with a larger ionic radius. The temperature-dependence of magnetic susceptibility shows a pronounced hump associated with antiferromagnetic (AFM) interactions for Rb₁(NN), being similar to those of K₁(NN) and K₁(AN) in the earlier report. On the other hand, Rb₁(AN) intriguingly exhibits paramagnetic susceptibility, observed in a nearly localized electron system, being apart from an highly correlated Mott insulating state. Crystal structural analyses of the X-ray diffraction profiles show a small difference in lattice parameters of the ab plane among K₁(NN), K₁(AN), and Rb₁(NN), whereas Rb₁(AN) exhibits a significantly larger value than those of the others, being indicative of greatly modified interaction energies. The different magnetic properties observed in Rb₁(AN) are interpreted from its modified intermolecular distance. The possibility of an emergent metallic state of K₁(AN) under high pressure has also been described, referring to electrical transport measured under high pressure.

Large-Area and Transferred High-Quality Three-Dimensional Topological Insulator Bi2-xSbxTe3-ySey Ultrathin Film by Catalyst-Free Physical Vapor Deposition

Uniform and large-area synthesis of bulk insulating ultrathin films is an important subject toward applications of a surface of three-dimensional topological insulators (3D-TIs) in various electronic devices. Here we report epitaxial growth of bulk insulating three-dimensional topological insulator (3D-TI) Bi_2-xSb_xTe_3-ySe_y (BSTS) ultrathin films, ranging from a few quintuple to several hundreds of layers, on mica in a large-area (1 cm²) via catalyst-free physical vapor deposition. These films can nondestructively be exfoliated using deionized water and transferred to various kinds of substrates as desired. The transferred BSTS thin films show good ambipolar characteristics as well as well-defined quantum oscillations arising from the topological surface states. The carrier mobility of 2500-5100 cm²/(V s) is comparable to the high-quality bulk BSTS single crystal. Moreover, tunable electronic states from the massless to the massive Dirac fermion were observed with a decrease in the film thickness. Both the feasible large-area synthesis and the reliable film transfer process can promise that BSTS ultrathin films will pave a route to many applications of 3D-TIs.

In-plane topological p-n junction in the three-dimensional topological insulator Bi2-xSbxTe3-ySey

A topological p-n junction (TPNJ) is an important concept to control spin and charge transport on a surface of three-dimensional topological insulators (3D-TIs). Here we report successful fabrication of such TPNJ on a surface of 3D-TI Bi_2−xSb_xTe_3−ySe_y thin films and experimental observation of the electrical transport. By tuning the chemical potential of n-type topological Dirac surface of Bi_2−xSb_xTe_3−ySe_y on its top half by using tetrafluoro-7,7,8,8-tetracyanoquinodimethane as an organic acceptor molecule, a half surface can be converted to p-type with leaving the other half side as the opposite n-type, and consequently TPNJ can be created. By sweeping the back-gate voltage in the field effect transistor structure, the TPNJ was controlled both on the bottom and the top surfaces. A dramatic change in electrical transport observed at the TPNJ on 3D-TI thin films promises novel spin and charge transport of 3D-TIs for future spintronics.

Dirac cone surface states rectify an ultralow dissipative spin and charge current, but it is yet to be confirmed in devices. Here, Tu et al. observe p-type electrical transport on one half surface and n-type on the other in Bi_2−xSb_xTe_3−ySe_y thin films, realizing a topological p-n junction.

Electric Properties of Dirac Fermions Captured into 3D Nanoporous Graphene Networks

Nanoporous graphene- based electric-double-layer transistors (EDLTs) are successfully fabricated. Transport measurements of the EDLTs demonstrate that the ambipolar electronic states of massless Dirac fermions with a high carrier mobility are well preserved in 3D nanoporous graphene along with anomalous nonlinear Hall resistance and exceptional transistor on/off ratio. This study may open a new avenue for device applications of graphene.

Biphenyl end-capped bithiazole co-oligomers for high performance organic thin film field effect transistors

Two new regiospecific biphenyl end-capped bithiazole co-oligomers, BP2Tz(in) and BP2Tz(out), have been synthesized for application in thin film field effect transistors (TFTs). BP2Tz(in) with a 2,2'-bithiazole central unit exhibits a field effect hole mobility as high as 3.5 cm(2) V(-1) s(-1). Green light emission is demonstrated for highly balanced ambipoar TFTs based on both BP2Tz(in) and BP2Tz(out).

2-Positional pyrene end-capped oligothiophenes for high performance organic field effect transistors

A new co-oligomer BPy2T with two 2-positional pyrenes as terminal groups and bithiophene as a central unit showed a high hole mobility of 3.3 cm² V⁻¹ s⁻¹ in a single crystal field effect transistor.

Multifunctional Porous Graphene for High-Efficiency Steam Generation by Heat Localization

Multifunctional nanoporous graphene is realized as a heat generator to convert solar illumination into high-energy steam. The novel 3D nanoporous graphene demonstrates a highly energy-effective steam generation with an energy conversation of 80%.

A magnetic anti-cancer compound for magnet-guided delivery and magnetic resonance imaging

Research on controlled drug delivery for cancer chemotherapy has focused mainly on ways to deliver existing anti-cancer drug compounds to specified targets, e.g., by conjugating them with magnetic particles or encapsulating them in micelles. Here, we show that an iron-salen, i.e., μ-oxo N,N'- bis(salicylidene)ethylenediamine iron (Fe(Salen)), but not other metal salen derivatives, intrinsically exhibits both magnetic character and anti-cancer activity. X-Ray crystallographic analysis and first principles calculations based on the measured structure support this. It promoted apoptosis of various cancer cell lines, likely, via production of reactive oxygen species. In mouse leg tumor and tail melanoma models, Fe(Salen) delivery with magnet caused a robust decrease in tumor size, and the accumulation of Fe(Salen) was visualized by magnetic resonance imaging. Fe(Salen) is an anti-cancer compound with magnetic property, which is suitable for drug delivery and imaging. We believe such magnetic anti-cancer drugs have the potential to greatly advance cancer chemotherapy for new theranostics and drug-delivery strategies.

Enhanced sensing response of oxidized graphene formed by UV irradiation in water

A small amount of defects (less than 0.01%) were introduced into graphene by irradiating it with ultraviolet (UV) light in water. The chemisorbed oxygen species caused a limited amount of degradation in the charge carrier mobility, while the physisorbed water molecules caused both a reduction in the mobility and hole doping. The oxidation was nonuniform, owing to variations in the potential caused by the metal contacts. Raman spectroscopy measurements revealed that UV irradiation in water promoted mild oxidation of graphene's basal plane, which enhanced the electrical sensing response of the adsorption of water molecules. The enhanced electrical response was achieved by the high binding energy of the water molecules at the oxidized sites and the near-zero Dirac point voltage, easily obtained by desorbing the physisorbed water molecules.

Reconstruction of band structure induced by electronic nematicity in an FeSe superconductor

We have performed high-resolution angle-resolved photoemission spectroscopy on an FeSe superconductor (T_{c}∼8  K), which exhibits a tetragonal-to-orthorhombic structural transition at T_{s}∼90  K. At low temperature, we found splitting of the energy bands as large as 50 meV at the M point in the Brillouin zone, likely caused by the formation of electronically driven nematic states. This band splitting persists up to T∼110  K, slightly above T_{s}, suggesting that the structural transition is triggered by the electronic nematicity. We have also revealed that at low temperature the band splitting gives rise to a van Hove singularity within 5 meV of the Fermi energy. The present result strongly suggests that this unusual electronic state is responsible for the unconventional superconductivity in FeSe.

Tuning of the ground state in electron doped anthracene

High quality bulk samples of anthracene (AN) doped with potassium (K) in 1 : 1 and 2 : 1 stoichiometries were successfully prepared by a method involving a room temperature solid-state mechanical diffusion process prior to intercalation reactions during heat treatment, and their physical properties were studied using both magnetic and optical measurements. The transfer of almost one electron from K to AN in K1(AN) was confirmed by SQUID and ESR measurements. A pronounced magnetic hump centered at 150 K associated with antiferromagnetic interactions was observed, which can most likely be interpreted in terms of on-site Coulomb repulsions of the Mott insulating states. Optical spectra of K1(AN) clearly showed the insulating states, as well as the electron occupation of the LUMO-derived band of AN. Our results demonstrated tuning of the ground state of a typical bulk hydrocarbon by alkali metal intercalation.

Bicontinuous nanoporous N-doped graphene for the oxygen reduction reaction

Bicontinuous nanoporous N-doped graphene with tunable pore size is synthesized by nanoporous Ni-based chemical vapor deposition. The novel 3D graphene material shows an outstanding catalytic activity towards the oxygen reduction reaction with a low onset potential of -0.08 V and a high kinetic current density of 8.2 mA cm(-2) at -0.4 V.

High-sensitivity photodetectors based on multilayer GaTe flakes

Optoelectronic devices based on layered materials such as graphene have resulted in significant interest due to their unique properties and potential technological applications. The electric and optoelectronic properties of nano GaTe flakes as layered materials are described in this article. The transistor fabricated from multilayer GaTe shows a p-type action with a hole mobility of about 0.2 cm(2) V(-1) s(-1). The gate transistor exhibits a high photoresponsivity of 10(4) A/W, which is greatly better than that of graphene, MoS2, and other layered compounds. Meanwhile, the response speed of 6 ms is also very fast. Both the high photoresponsivity and the fast response time described in the present study strongly suggest that multilayer GaTe is a promising candidate for future optoelectronic and photosensitive device applications.

Both electron and hole Dirac cone states in Ba(FeAs)2 confirmed by magnetoresistance

Quantum transport of Dirac cone states in the iron pnictide Ba(FeAs)(2) with a d-multiband system is studied by using single crystal samples. Transverse magnetoresistance develops linearly against the magnetic field at low temperatures. The transport phenomena are interpreted in terms of the zeroth Landau level by applying the theory predicted by Abrikosov. The results of the semiclassical analyses of a two carrier system in a low magnetic field limit show that both the electron and hole reside as the high mobility states. Our results show that pairs of electron and hole Dirac cone states must be taken into account for an accurate interpretation in iron pnictides, which is in contrast with previous studies.

Structures and Properties of C60 & C70 Thin Films Fabricated by Organic MBE

The C60/C70 thin film crystals have been fabricated on the (001) surface of alkali halide substrates, KC1, KBr, and NaCl, and their structures have been studied. The crystal structure analyses by TEM show that the hexagonal closed packing (hep) with lattice parameters of a=10.0 Å and c=16.3 Å and the face-centered cubic (fee) with a=14.2 Å coexist in the C60 thin film crystals. The C70 thin film crystals show an expanded lattice constant of a=10.5 Å from the view perpendicular to the stacking plane. The ratio of hep to fee is dependent on the kind of the substrates and on the substrate temperatures during the crystal growth. The observed reversible change in the Raman spectrum of the C60 thin films implies a rotational molecular motion in the thin film crystals.

Effects of electron-transfer chemical modification on the electrical characteristics of graphene

Because of the large reactivity of single layer graphene to electron-transfer chemistries, 4-nitrobenzene diazonium tetrafluoroborate is employed to modify the electrical properties of graphene field-effect transistors. After modification, the transfer characteristics of chemically modified graphene show a reduction in the minimum conductivity, electron-hole mobility asymmetry, a decrease in the electron/hole mobility, and a positive shift of the charge neutrality point with broadening of the minimum conductivity region. These phenomena are attributed to a dediazoniation reaction and the adsorbates on the graphene surface.

Electron-phonon interactions of Si100 and Ge100 superconductors with Ba atoms inside

The absolute density of states of isostructural Ba24Si100 and Ba24Ge100 near the Fermi level, which is very relevant for discussion on phonon-mediated superconductivity, is quantitatively evaluated to be 0.28  states  eV⁻¹/Ge  atom and 0.18  states  eV⁻¹/Si   atom by combining soft x-ray photoelectron spectroscopy and magnetic susceptibility measurements. The energetics of the anharmonic motions of the endohedral Ba atoms are also discussed on the basis of the 4d-core-level spectra. The discussion based on these important physical parameters concludes that the unique electron-phonon interactions do not occur due to the local Jahn-Teller distortion of the fragile open cage structure in the phonon-mediated BCS formalism. Compounds with a rigid cage would be essential to give rise to anticipated unique interactions as a key ingredient favored for superconducting paring.

Rotational sublevels of an ortho-hydrogen molecule encapsulated in an isotropic C60 cage

From specific heat measurements in high quality H2@C60 samples performed over a broad temperature range, we obtain the smallest yet observed splitting of rotational energy sublevels of encapsulated single H2 molecules, 0.1-0.2 meV, in the nearly spherical potential well provided by highly isotropic C60 cages. Additionally, we find evidence of the quantized oscillation state of isolated H2 in the C60 cage. The minuscule splitting indicates that H2@C60 provides unprecedented opportunities to study free-molecule quantum dynamic properties.

Soft x-ray photoelectron spectroscopy study of type-I clathrates

Extensive soft x-ray photoelectron spectroscopy studies are performed on Ba8 Ga16 Ge30 (BGG) and Sr8Ga16Ge30 (SGG) single crystals ranging from Fermi to core levels, at a high-energy facility. Valence band x-ray photoelectron spectroscopy (XPS) experiments with theoretical calculations revealed that the valence band is mainly constructed by the Ge/Ga 4s and 4p wave functions with little contribution of the Ba/Sr atomic orbitals. Surprisingly, unexpected features evidencing the different shift for the 2a- and 6d- sites between Ba 4d and Sr 3d are observed. The detailed analyses including theoretical support by first-principles band-structure calculations lead to the conclusion that the component distributions of the larger tetrakaidecahedral cage are different depending on the endohedral atoms, which contrasts with the past consensus that BGG and SGG have the same framework structure. This may give thorough reconsiderations on earlier interpretations of experimental data.

Switchable Semiconductive Property of the Polyhydroxylated Metallofullerene

The temperature-sensitive property of polyhydroxylated metallofullerene film of Gd@C82(OH)x with special hydroxyl number was studied using synchrotron radiation ultraviolet photoelectron spectroscopy (UPS) and TEM techniques. From room temperature (RT) to 4 degrees C the photoelectron onset energy of the spectra of Gd@C82(OH)12 shifted from 1.9 to 0.2 eV, indicating that Gd@C82(OH)12 automatically shifted from insulator at RT to semiconductor at 4 degrees C. However, this could not be observed for Gd@C82(OH)20. TEM experiments show that the variation of conductivity can be ascribed to formation of a microcrystal under low temperature. The dipole moment induced unique intermolecular interactions and self-assembled microcrystalline structures for Gd@C82(OH)12. This may cause reconstruction of the upper valence band formed by pi-like electrons as well as the density of states (DOS) around the Fermi level (EF) and reconstruct the deeper valence band formed by sigma-like electrons, eventually resulting in a shift to a semiconducting nature. These findings revealed a novel nature for polyhydroxylated Gd@C82(OH)x materials: Their insulating properties can be controllably tuned into semiconducting ones as a function of temperature.

Ferromagnetic ordering in a new nickel polyborate NiB12O14(OH)10

A new nickel polyborate, NiB12O14(OH)10 was synthesized using boric acid as a flux. This material has two-dimensional borate layers with a quasi-square lattice of Ni2+. The Ni2+ ions locate in the plane of the two-dimensional layer, bridged through BnO(n+1) chains in the plane and connected with the three-membered ring borate groups out of the plane. The dc and ac magnetic susceptibility, magnetization and specific heat measurements show that this material undergoes a weak ferromagnetic phase transition at Tc = 5.8 K. At T < Tc, a metamagnetic phase transition is observed at about 5 T, associated by a spin-flop, suggesting the ferromagnetic ordering is induced by an antiferromagnetic interaction. A broad maximum in the ac susceptibility at TM = 23-24 K indicates an intermediate short-range ordering.

Soft x-ray spectroscopy of Ba24Ge100: Electronic phase transition and Ba-atom rattling

The electronic states of Ba24Ge100 are studied by soft x-ray photoelectron spectroscopy (XPS) at a high-energy photon factory. A large reduction in the density of states (DOS) at the Fermi level is clearly shown before and after the electronic phase transition at 200 K. The changes in the spectrum widths and the fine structures of the core-level Ba 4d spectra give a very reasonable indication of the Ba-atom rattlings in the clathrate polyhedra. On-resonance experiments using the excitation from Ba 3d to 4f levels display that the wave functions of Ba 5d and 6s orbitals give only a small contribution to make a Fermi surface through the hybridization with the Ge20 cluster orbitals. Importantly, reliable values of the DOS at the Fermi level NEF are successfully deduced, using two data sets of DOS obtained from high-resolution XPS and the total magnetic susceptibilities by a superconducting quantum interference device, to be 0.149 and 0.0427 states eV(-1) (Ge atom)(-1) for a high-temperature and for a low-temperature phase.

Mechanism of superconductivity in the polyhedral-network compound Ba8Si46

The silicon clathrates--materials composed of metal-doped Si(20) dodecahedra--were identified as the first superconductors based on pure silicon networks. The mechanism of superconductivity in these materials can be obtained by studying their phonon modes, as modified by isotope substitution, and specific-heat measurements. Here, we present experimental studies that provide strong evidence that superconductivity in Ba(8)Si(46) is explained in the framework of phonon-mediated Bardeen-Cooper-Schriefer theory. Analyses using the McMillan approximation of the Eliashberg equation indicate that the superconducting mechanism is in the medium coupling regime, but at the high-end limit. The large density of states at the Fermi level, which arises from hybridization of the Si(20) cluster and Ba orbitals, is responsible for the unexpectedly high superconducting temperature. The temperature evolution of the specific heat unambiguously shows that this is an s-wave symmetry superconductor.

Close-packed C(70)(3-) phases - synthesis, structure, and electronic properties

The high symmetry and resulting electronic degeneracy of the C(60)(3)(-) anion is viewed as the key molecular feature in the high superconducting transition temperatures of fulleride and oxidized fullerene systems. The experimental evaluation of this hypothesis requires the synthesis of face-centered cubic (fcc) trivalent fulleride anion salts derived from higher fullerenes such as C(70), which have thus far proved elusive with only stable A(1)C(70), A(4)C(70), and A(6)C(70) phases known. In this paper, we report the synthesis of fcc A(3)C(70) phases stabilized by size-matching the tetrahedral site with the sodium cation. The structures are strongly dependent on the cooling protocol due to the existence of metastable partially or completely orientationally disordered phases. EPR data indicate that the phases are metallic but not superconducting. The densities of states at the Fermi level appear too low to give superconductivity at above 5 K, consistent with recent observations that four electrons per C(70) anion are required for superconductivity. Size-matching on both the octahedral and tetrahedral sites is required for A(3)C(70) stability - K(2)CsC(70) is only stable at elevated temperature and Na(2)C(70) is unstable, the composition corresponding to C(70) and a sodium-rich trigonal phase.

ESDN, a novel neuropilin-like membrane protein cloned from vascular cells with the longest secretory signal sequence among eukaryotes, is up-regulated after vascular injury

A novel cDNA has been isolated from primary culture of human coronary arterial cells by a signal sequence trap method, and designated ESDN (endothelial and smooth muscle cell-derived neuropilin-like molecule). ESDN is a type-I transmembrane protein with the longest cleavable secretory signal sequence among eukaryotes. ESDN contains a CUB domain and a coagulation factor V/VIII homology domain, which reminds us of the structure of neuropilins. ESDN also harbors an LCCL domain, which is shared by Limulus factor C and Coch. Mouse and rat counterparts were also identified revealing >84% amino acid identity with human ESDN. The human ESDN gene was mapped between D3S1552 and D3S1271. Northern blot analysis showed that ESDN mRNA was expressed in various tissues; particularly highly expressed in cultured vascular smooth muscle cells. The ESDN expression was up-regulated in platelet-derived growth factor-BB-stimulated vascular smooth muscle cells in vitro and neointima of the balloon-injured carotid artery in vivo. Overexpression of ESDN in 293T cells suppressed their bromodeoxyuridine uptake. In addition, ESDN protein was strongly expressed in nerve bundles in rodents. Thus, ESDN is considered to play a role in regulation of vascular cell growth and may have a wide variety of functions in other tissues including the nervous system, like neuropilins.

Notch1 and Notch3 instructively restrict bFGF-responsive multipotent neural progenitor cells to an astroglial fate

Notch1 has been shown to induce glia in the peripheral nervous system. However, it has not been known whether Notch can direct commitment to glia from multipotent progenitors of the central nervous system. Here we present evidence that activated Notch1 and Notch3 promotes the differentiation of astroglia from the rat adult hippocampus-derived multipotent progenitors (AHPs). Quantitative clonal analysis indicates that the action of Notch is likely to be instructive. Transient activation of Notch can direct commitment of AHPs irreversibly to astroglia. Astroglial induction by Notch signaling was shown to be independent of STAT3, which is a key regulatory transcriptional factor when ciliary neurotrophic factor (CNTF) induces astroglia. These data suggest that Notch provides a CNTF-independent instructive signal of astroglia differentiation in CNS multipotent progenitor cells.

Silicon clathrate with an f-electron system

A novel crystal of Ba6Ce2Au4Si42 with Ba and Ce encapsulated into silicon-polyhedral clusters is self-assembled from the state of elemental mixture. Each atom in the crystal is arranged in its well-defined position with a nanoscale period, causing unique interactions between the conduction and the magnetic electrons originating from the independent sources of Ba and Ce, respectively. In this system, the long-distant magnetic f electrons can interact with each other through nanoscale spacing with isotropic three dimensionality, leading to the occurrence of a unique spontaneous spin ordering at 6.5 K.